CN102800797A - 具有远离荧光结构的蝙蝠翼透镜 - Google Patents
具有远离荧光结构的蝙蝠翼透镜 Download PDFInfo
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- CN102800797A CN102800797A CN201210076732XA CN201210076732A CN102800797A CN 102800797 A CN102800797 A CN 102800797A CN 201210076732X A CN201210076732X A CN 201210076732XA CN 201210076732 A CN201210076732 A CN 201210076732A CN 102800797 A CN102800797 A CN 102800797A
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Images
Classifications
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- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
- F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
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- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/114,730 US8497519B2 (en) | 2011-05-24 | 2011-05-24 | Batwing LED with remote phosphor configuration |
US13/114,730 | 2011-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102800797A true CN102800797A (zh) | 2012-11-28 |
CN102800797B CN102800797B (zh) | 2015-01-14 |
Family
ID=47199838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210076732.XA Active CN102800797B (zh) | 2011-05-24 | 2012-03-21 | 具有远离荧光结构的蝙蝠翼透镜 |
Country Status (3)
Country | Link |
---|---|
US (5) | US8497519B2 (zh) |
CN (1) | CN102800797B (zh) |
TW (1) | TWI451602B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106601134A (zh) * | 2016-10-26 | 2017-04-26 | 上海得倍电子技术有限公司 | 显示屏模块结构及显示屏模块的制造方法 |
CN108831983A (zh) * | 2018-06-15 | 2018-11-16 | 厦门多彩光电子科技有限公司 | 一种led器件的封装方法及led器件 |
CN111025743A (zh) * | 2018-10-10 | 2020-04-17 | 中强光电股份有限公司 | 光源模块及显示装置 |
CN111063787A (zh) * | 2014-01-23 | 2020-04-24 | 亮锐控股有限公司 | 具有自对准预制透镜的发光设备 |
CN111527536A (zh) * | 2017-11-24 | 2020-08-11 | 华为技术有限公司 | 显示装置及其相关集成电路、方法和用户设备 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8497519B2 (en) * | 2011-05-24 | 2013-07-30 | Tsmc Solid State Lighting Ltd. | Batwing LED with remote phosphor configuration |
DE102011113483B4 (de) * | 2011-09-13 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement |
CN103474562B (zh) * | 2012-06-08 | 2016-11-23 | 展晶科技(深圳)有限公司 | 发光二极管的制造方法 |
US10508794B2 (en) * | 2017-09-21 | 2019-12-17 | Ideal Industries Lighting Llc | LED troffer fixture having a wide lens |
US11035527B1 (en) | 2020-07-23 | 2021-06-15 | Ideal Industries Lighting Llc | Troffer light fixture |
US11079079B2 (en) | 2017-09-21 | 2021-08-03 | Ideal Industries Lighting, LLC | Troffer light fixture |
TWI582344B (zh) * | 2013-08-05 | 2017-05-11 | 鴻海精密工業股份有限公司 | 透鏡及使用該透鏡的光源裝置 |
US9279550B2 (en) * | 2013-10-09 | 2016-03-08 | GE Lighting Solutions, LLC | Luminaires having batwing photometric distribution |
US9506624B2 (en) | 2013-10-31 | 2016-11-29 | GE Lighting Solutions, LLC | Lamp having lens element for distributing light |
US9680073B2 (en) * | 2014-05-30 | 2017-06-13 | Seoul Semiconductor Co., Ltd. | Light emitting module |
JP6543564B2 (ja) * | 2015-12-14 | 2019-07-10 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 被覆光半導体素子の製造方法 |
WO2016098825A1 (ja) * | 2014-12-17 | 2016-06-23 | 日東電工株式会社 | 被覆光半導体素子の製造方法 |
TWI691102B (zh) * | 2014-12-17 | 2020-04-11 | 晶元光電股份有限公司 | 被覆光半導體元件之製造方法 |
CN104595769A (zh) * | 2015-01-29 | 2015-05-06 | 佛山市三目照明电器有限公司 | 一种led灯具的生产方法 |
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US10665576B2 (en) * | 2017-06-21 | 2020-05-26 | Stanley Electric Co., Ltd. | Optically transparent plate with light emitting function and method of producing the same |
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JP7189422B2 (ja) * | 2018-09-27 | 2022-12-14 | 日亜化学工業株式会社 | 波長変換部材複合体、発光装置及び波長変換部材複合体の製造方法 |
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JP7231795B1 (ja) | 2020-02-11 | 2023-03-01 | シグニファイ ホールディング ビー ヴィ | コンパクトなレーザベース光生成デバイス |
CN113867044A (zh) | 2020-06-30 | 2021-12-31 | 光森科技有限公司 | 光源模块 |
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EP3968390A1 (en) * | 2020-09-15 | 2022-03-16 | Eosopto Technology Co., Ltd | Light source module |
US11781732B2 (en) | 2021-12-22 | 2023-10-10 | Ideal Industries Lighting Llc | Lighting fixture with lens assembly for reduced glare |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1702507A (zh) * | 2004-05-28 | 2005-11-30 | 三星电机株式会社 | Led封装和用于包括该led封装的lcd的背光组件 |
CN101169235A (zh) * | 2007-09-05 | 2008-04-30 | 昌鑫光电(东莞)有限公司 | 结构改良的白光发光二极管 |
US20090015157A1 (en) * | 2007-07-10 | 2009-01-15 | Ching-Cherng Sun | Phosphor package of light emitting diodes |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6896381B2 (en) * | 2002-10-11 | 2005-05-24 | Light Prescriptions Innovators, Llc | Compact folded-optics illumination lens |
KR101080355B1 (ko) * | 2004-10-18 | 2011-11-04 | 삼성전자주식회사 | 발광다이오드와 그 렌즈 |
US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
TWI261654B (en) * | 2004-12-29 | 2006-09-11 | Ind Tech Res Inst | Lens and LED with uniform light emitted applying the lens |
KR100691179B1 (ko) | 2005-06-01 | 2007-03-09 | 삼성전기주식회사 | 측면 발광형 엘이디 패키지 및 그 제조 방법 |
KR100649758B1 (ko) * | 2005-11-15 | 2006-11-27 | 삼성전기주식회사 | 균일한 광량 분포를 위한 렌즈 및 이를 이용한 발광 장치 |
KR101007131B1 (ko) * | 2008-11-25 | 2011-01-10 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US8497519B2 (en) * | 2011-05-24 | 2013-07-30 | Tsmc Solid State Lighting Ltd. | Batwing LED with remote phosphor configuration |
-
2011
- 2011-05-24 US US13/114,730 patent/US8497519B2/en active Active
-
2012
- 2012-03-21 CN CN201210076732.XA patent/CN102800797B/zh active Active
- 2012-04-12 TW TW101112923A patent/TWI451602B/zh active
-
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- 2013-07-19 US US13/946,007 patent/US8735190B2/en active Active
-
2014
- 2014-05-22 US US14/284,491 patent/US8921884B2/en active Active
- 2014-12-29 US US14/584,009 patent/US9166129B2/en active Active
-
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- 2015-09-03 US US14/844,760 patent/US9385287B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1702507A (zh) * | 2004-05-28 | 2005-11-30 | 三星电机株式会社 | Led封装和用于包括该led封装的lcd的背光组件 |
US20090015157A1 (en) * | 2007-07-10 | 2009-01-15 | Ching-Cherng Sun | Phosphor package of light emitting diodes |
CN101169235A (zh) * | 2007-09-05 | 2008-04-30 | 昌鑫光电(东莞)有限公司 | 结构改良的白光发光二极管 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111063787A (zh) * | 2014-01-23 | 2020-04-24 | 亮锐控股有限公司 | 具有自对准预制透镜的发光设备 |
CN106601134A (zh) * | 2016-10-26 | 2017-04-26 | 上海得倍电子技术有限公司 | 显示屏模块结构及显示屏模块的制造方法 |
CN111527536A (zh) * | 2017-11-24 | 2020-08-11 | 华为技术有限公司 | 显示装置及其相关集成电路、方法和用户设备 |
CN108831983A (zh) * | 2018-06-15 | 2018-11-16 | 厦门多彩光电子科技有限公司 | 一种led器件的封装方法及led器件 |
CN111025743A (zh) * | 2018-10-10 | 2020-04-17 | 中强光电股份有限公司 | 光源模块及显示装置 |
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US9385287B2 (en) | 2016-07-05 |
US20140247578A1 (en) | 2014-09-04 |
TWI451602B (zh) | 2014-09-01 |
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US20150380616A1 (en) | 2015-12-31 |
US20130309789A1 (en) | 2013-11-21 |
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TW201248941A (en) | 2012-12-01 |
US8921884B2 (en) | 2014-12-30 |
US8497519B2 (en) | 2013-07-30 |
US8735190B2 (en) | 2014-05-27 |
US20150118772A1 (en) | 2015-04-30 |
US9166129B2 (en) | 2015-10-20 |
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