CN102788997B - 磁接近传感器 - Google Patents
磁接近传感器 Download PDFInfo
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Abstract
本发明涉及磁接近传感器,包括磁传感器元件(5),和具有第一磁极面和第二磁极面的磁体组件(6,7),其中磁体组件(6,7)的第一磁极面位于邻近磁接近传感器的传感器目标体表面处,和传感器元件(5)位于距磁体组件(6,7)远离所述传感器目标体表面的第二磁极面第一距离t处。
Description
技术领域
本发明涉及磁接近传感器,例如,用于感测传感器附近存在或不存在铁磁物品。更具体地,本发明涉及磁接近传感器,其包括磁传感元件,和具有第一磁极面和第二磁极面的磁体组件。
背景技术
美国专利US-A-5,781,005公开了一种霍尔效应铁磁物品接近传感器,其适用于感测邻近传感器的铁磁物品,例如齿轮上的(钢)齿。传感器包括磁场传感器组件(例如霍尔传感器元件),和磁体结构。从传感器目标体平面方向看,磁体结构位于平面霍尔传感器元件的后面。当铁磁物体经过传感器平面附近(即,接近霍尔传感器元件)时,可感测到变化的磁场。因为磁体结构的磁场取向和分布并结合霍尔传感器元件的设置,可以实现有效信号处理。选择磁体结构,使得至少北极和南极都在传感器元件后方的平面内,导致特定的磁场取向和分布。
这个传感器是更一般的已知的反偏霍尔传感器的特定具体实施方式,其中允许磁场朝向传感器的感测表面通过磁场传感器。传感器的感测表面一侧的目标体影响穿过该磁场传感器的磁力线。这些偏差能够被感测并且相关信号被处理。
发明内容
本发明目的是提供具有提高的能力和效率的磁接近传感器。
根据本发明,提供一种根据前文定义的磁接近传感器,其中磁体组件的第一磁极面位于邻近磁接近传感器的传感器目标体表面处,并且该传感器元件位于距该磁体组件远离传感器目标体表面的第二磁极面第一距离处。这种配置允许以非常有效的方式构建和组装接近传感器,并具有高灵敏度和可信度。
附图说明
本发明将使用多个示例性实施例,参考关联的附图,在下文进行详细讨论,其中:
图1a示出了现有技术中的具有霍尔芯片的磁接近传感器的示意图;
图1b示出了图1中的磁接近传感器的特性曲线;
图2a示出了本发明磁接近传感器的实施例的示意图;
图2b示出了图2中的磁接近传感器的特性曲线;和
图3示出了本发明磁接近传感器的进一步的实施例的示意图。
具体实施方式
现有技术传感器设计具有位于传感器磁体和系统目标体之间的感测霍尔芯片。虽然,理论上,这种设计可以作为铁磁物体(具有高磁导率的物体,例如由铁或铁合金制造的物体)的传感器来进行工作,该设计无法在所有应用中都很好地工作。这个缺陷的一个原因是非常高的基线或者无物体存在的磁通和信号。有物体存在时的信号在很多应用情况中不比基线信号大很多,并且电噪声的存在导致现有技术设计不可靠。
美国专利US5781005中示出的现有技术作品提供了克服这个高偏置问题的解决方案(参考图1a示出的现有技术实施)。图1a示出了用于检测旋转磁盘2上的延伸齿3(例如用于rpm测量)的磁接近传感器的简化图。
此处磁极片7被放置于(永)磁体6的孔或通孔中,以具有位于芯片侧的磁体面处的相反磁极。磁体6是具有高度p和外直径d1的圆柱形磁体,并具有直径为d2的中央通孔。磁极片7是T形变体,其具有厚度q,和直径为d2的杆,从而提供了具有外直径d1和高度p的圆柱形磁体组件。磁体组件6,7的第一磁极面向目标体(齿3),并被设置在距离s处。霍尔传感器5位于距离目标体(齿3)t处,在该目标体和磁体组件6,7的第一面之间。通过这种方式,当存在槽时可产生零磁通。相对于偏置的灵敏度以下述方式给出:
Sens=(B_tooth-B_slot)/(max(|B_tooth|,|B_slot|))*100%,
其中,B_tooth是当在传感器表面(第一磁极)附近存在齿3时的磁通密度,而B_slot是当附近存在槽(磁盘2中两个相邻齿3之间的空间)时的磁通密度。
图1b中的曲线图显示了在这个现有技术设置中当将霍尔传感器5放在t=2.4和2.6mm之间时,灵敏度科为>偏置的100%。这相对于之前作品的灵敏度<20%(其它反偏差磁传感器元件的具体实施方式),是很大的提高。然而,这种原理的缺点是霍尔传感器5的芯片引线需要围绕磁体6折叠,因为霍尔传感器元件需要位于磁体6和有目标体(金属齿3)存在(或不存在)的传感器前表面之间。这减少了磁体区域并因此减少了强度,同样也增加了整体尺寸,以提供引线弯曲。此外,因为需要为霍尔传感器5留出空间,磁体6接近目标体3受到限制,这导致更小的信号或者需要更强和/或更大的磁体6。尤其当需要小传感器时,这将是问题。此外,因为霍尔传感器5位于靠近目标体3处,目标体3的残留磁化可能对传感器信号有很大影响。
对于这些测量,使用了下面的设计参数:
d1=8mm;d2=2mm;p=6mm;q=2mm;s=4.775mm。
本发明实施例具有提高的机能。图2a示出了根据本发明的磁接近传感器的一个实施例的简化图。同样示出的目标体包括具有延伸齿3的磁盘2。在这种情况下,磁体6为圆柱形类型并具有中央通孔(外直径为d1,通孔直径为d2和高度(或长度)为p),还有外直径为d2且长度为p的轴向磁极片7。该磁体组件因此包括具有同轴设置的磁体本体或磁体6的轴向磁极片7。磁场传感器5(例如霍尔传感器)位于磁组件远离目标体3的一侧,距磁体组件6,7的第二磁极面距离t。磁体组件6,7的第一磁极面面向目标体(磁盘2和齿3),并且位于距齿3距离s处。磁接近传感器元件5,6,7可以设置在一个传感器外壳8内,例如使用塑料模具技术。传感器外壳8也可以如图所示覆盖磁体组件6,7的第一磁极的传感器表面,或者,它可以不覆盖传感器表面。
上面描述的现有技术实施例中的反偏配置被改变,但是保持了高效的磁场分布(尽可能接近目标体3),并且使用位于磁磁体组件6,7的背面处的磁场传感器5进行测量。
本发明示出了一种设计,其中霍尔传感器5位于磁体6的另一侧:磁体6位于霍尔传感器5和目标体3之间并保持了灵敏度>100%(参考图2a和3中示出的实施例)。齿3或槽(磁盘2中位于两个相邻齿3之间的空间)的存在使得穿过磁极片(磁体组件6,7)的磁通量发生变化。在磁体6左侧的位置t处,这个变化将由霍尔传感器5感测到。图2b中的曲线图示出了当将霍尔传感器5放在t=2.15和2.4mm之间时,灵敏度可为>偏置的100%。这个原理的优点在于霍尔传感器5的引线不必围绕磁体6折叠。此外,因为使霍尔传感器5更加远离目标体2,3,目标体2,3的任何残留磁化将对传感信号有较少的影响。
在图2a的实施例中,下述应用:
-通过选择合适的材料,使得使用的磁体组件6,7具有大约900kA/m的矫顽力(Hc)和大约1.14T的磁场强度(Br)的特性。磁极片7是具有1000的相对磁导率(Ur)的软磁材料。
-t是霍尔传感器5位于磁体组件6,7的(第二磁极)后方的位置。
-在进一步的实施例中,传感器前表面(第一磁极)的间隙设置为1mm,通过包括用于覆盖和保护磁体组件6,7的第一磁极的塑料外壳8的0.5mm厚度:这样距离s=1.5mm(从磁体组件前表面到目标体3的距离)。
-作为偏置的百分比的灵敏度定义为:
Sens=(B_tooth-B_slot)/(max(|B_tooth|,|B_slot|))*100%
-在霍尔传感器5后方2.2至2.7mm范围内可得到作为偏置的百分比的灵敏度。当将霍尔传感器5放置在位于磁体6后方t=2.15至2.4mm之间时,作为偏置的百分比的灵敏度可以>100%。
-这些结果(参见图2b)可与图1b中示出的结果相比较,即,其中的灵敏度很高的位于磁体后方的距离范围可被定义。
对于这些测量,使用了下面的设计参数:
d1=8mm;d2=3mm;p=6mm;s=1.5mm。
在替代实施例中,可以选择下面的参数:
*d1=6mm...12mm
*d2=2mm...5mm
*s=0.7mm...2.5mm
*p=4mm...12mm
基于这些参数的选择值,可以计算出磁接近传感器的灵敏度最高处的点t,还可以计算出可实现高灵敏度的围绕那个点的范围。
用更通常的话说,本发明涉及一种磁接近传感器,其包括磁传感器元件5(例如霍尔传感器元件),和具有第一磁极面和第二磁极面的磁体组件6,7,其中磁体组件的第一磁极面位于邻近该磁接近传感器的传感器目标体表面处,并且传感器元件5位于距离磁体组件6,7远离传感器目标体表面的第二磁极面第一距离t处。
该磁体组件可包括具有同轴设置的磁体本体6的轴向磁极片7(磁通集中器,例如,圆柱形的,软磁材料)。不需要如现有技术传感器中的T形磁极片。
在一个实施例中,磁接近传感器进一步包括传感器外壳8(参见图2a和3),定义了传感器目标体表面,其中传感元件5和磁体组件6,7嵌入传感器外壳8内。也可以在传感器外壳8中,例如在传感器基底或印刷电路板上,提供传感器元件电路,例如用于在传感器自身内处理测量信号。
在进一步的实施例中(参见图2a),具有至少0.1mm,例如至少0.5mm,厚度的传感器外壳8覆盖磁体组件6,7的第一磁极表面。这允许具有已定义好的传感器目标体表面以及目标体2,3紧密周围将由磁体组件6,7产生的磁场感测。在替代实施例中,如图3所示的实施例,外壳8与磁体组件6,7的第一磁极面平齐。
在一个实施例中,第一距离t在2.2至2.7mm之间。这配合直径d2为3mm的磁极片,直径d1为8mm,长度p为6mm的磁体本体,和距离为1mm(1.5mm)的目标体,如图2a中示出的实施例所描述的,其使得在t=2.34mm处具有最大灵敏度。
图3示出了替代实施例,其具有不同形状的第二磁极面,其中轴向磁极片7延伸出轴向设置的磁磁体本体6。磁体6的长度由p表示,并且轴向磁极片延伸出磁体6的长度为距离a。磁体组件6,7的第一磁极与图2a的实施例类似,并提供形成第一磁磁极的平坦的磁体组件表面。
这个实施例可以获得磁通密度绝对水平的更小的陡度(steep gradient),同时具有更高的灵敏度的效果。已完成用于一实施例的比较性测试,其中d1=5.5mm,d2=2mm,p=4.4mm,s=1.8mm,并且其中的参数a是变化的(-0.5,-0.1,0.1,0.5和1mm)。发现越长的磁极片7(正值1)会带来越小的陡度,其导致霍尔传感器5的位置容差(值t)更加不关键。推荐a=0.5mm,t=0.6mm:或者如果a增加,则t可减少。虽然对于相同的t值,更长的磁极片带来稍小的灵敏度,t减小较高值1最终导致更高的灵敏度。
在上文参考附图中示出的多个示例性实施例描述了本发明实施例。一些部分或元件的修改和替代实现是可能的,并被包括在如附带的权利要求所定义的保护范围内。
Claims (5)
1.磁接近传感器,包括磁传感器元件(5),以及具有第一磁极面和第二磁极面的磁体组件(6,7),其中第一磁极面对应于磁体组件(6,7)的第一磁极,第二磁极面对应于磁体组件(6,7)的第二磁极,
其中所述磁体组件(6,7)的第一磁极面位于邻近磁接近传感器的传感器目标体表面处,和
传感器元件(5)位于距磁体组件(6,7)远离所述传感器目标体表面的第二磁极面第一距离t处,其中
磁体组件(6,7)被设在磁传感器元件(5)和传感器目标体表面之间,其中传感器元件(5)的感测表面面向磁体组件(6,7)远离所述传感器目标体表面的所述第二磁极面,并且其中磁体组件(6,7)包括轴向磁极片(7)及同轴设置的磁体本体(6)。
2.根据权利要求1所述的磁接近传感器,其中所述轴向磁极片(7)延伸出所述同轴设置的磁体本体(6)。
3.根据权利要求1或2所述的磁接近传感器,进一步包括传感器外壳(8),所述传感器外壳(8)定义传感器目标体表面,其中所述传感器元件(5)和磁体组件(6,7)嵌入所述传感器外壳(8)中。
4.根据权利要求3所述的磁接近传感器,其中所述传感器外壳(8)以至少0.1mm的厚度覆盖所述磁体组件(6,7)的第一磁极面。
5.根据权利要求1所述的磁接近传感器,其中所述第一距离(t)在2.2mm至2.7mm之间。
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