CN102769075B - 封装载板及其制作方法 - Google Patents
封装载板及其制作方法 Download PDFInfo
- Publication number
- CN102769075B CN102769075B CN201110158440.6A CN201110158440A CN102769075B CN 102769075 B CN102769075 B CN 102769075B CN 201110158440 A CN201110158440 A CN 201110158440A CN 102769075 B CN102769075 B CN 102769075B
- Authority
- CN
- China
- Prior art keywords
- cover body
- insulating cover
- heat
- heat dissipation
- loading plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 230000017525 heat dissipation Effects 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000003054 catalyst Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000001746 injection moulding Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 abstract 4
- 239000002335 surface treatment layer Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 30
- 238000004806 packaging method and process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000007747 plating Methods 0.000 description 4
- 230000003245 working effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000010009 beating Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49083—Heater type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49087—Resistor making with envelope or housing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
- Y10T29/49353—Heat pipe device making
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
本发明公开一种封装载板及其制作方法。该制作方法提供一具有彼此相对的一内表面与一外表面、多个开口及一容置空间的绝缘盖体。形成一图案化金属层配置于绝缘盖体的外表面上。形成一表面处理层于图案化金属层上。提供一散热元件于绝缘盖体的容置空间中,且散热元件结构性连接于绝缘盖体。散热元件的表面已形成有一导热层,且绝缘盖体的开口暴露出部分导热层。
Description
技术领域
本发明涉及一种半导体结构及其制作方法,且特别是涉及一种封装载板及其制作方法。
背景技术
芯片封装的目的是提供芯片适当的信号路径、导热路径及结构保护。传统的打线(wirebonding)技术通常采用导线架(leadframe)作为芯片的承载器(carrier)。随着芯片的接点密度逐渐提高,导线架已无法再提供更高的接点密度,故可利用具有高接点密度的封装基板(packagesubstrate)来取代之,并通过金属导线或凸块(bump)等导电媒体,将芯片封装至封装基板上。
以目前常用的发光二极管封装结构来说,由于发光二极管芯片在使用前需先进行封装,且发光二极管芯片在发出光线时会产生大量的热能。倘若热能无法逸散而不断地堆积在发光二极管封装结构内,则发光二极管封装结构的温度会持续地上升。如此一来,发光二极管芯片可能会因为过热而导致亮度衰减及使用寿命缩短,严重者甚至造成永久性的损坏。因此,现今采用的发光二极管封装结构都会配置散热块(heatsink)以对发光二极管芯片进行散热。
现有的封装基板主要是由多层图案化导电层与至少一绝缘层所构成,其中绝缘层配置于相邻的两图案化导电层之间用以达到绝缘的效果。散热块是通过粘着层而固定于封装基板的下表面上。一般来说,发光二极管芯片与封装基板电连接,而发光二极管芯片所产生的热可经由图案化导电层、绝缘层而传递至散热块以进行导热。然而,由于粘着层与绝缘层的导热率较差,所以发光二极管芯片所产生的热经由绝缘层、粘着层而传递至散热块时,会造成热阻(thermalresistance)增加,进而导致导热不易。因此,如何使发光二极管芯片所产生热能够更有效率地传递至外界,俨然成为设计者在研发上关注的议题之一。
发明内容
本发明的目的在于提供一种封装载板,适于承载一发热元件。
本发明再一目的在于提供一种封装载板的制作方法,用以制作上述的封装载板。
为达上述目的,本发明提供一种封装载板的制作方法,其包括下述步骤。提供一绝缘盖体,其中绝缘盖体具有彼此相对的一内表面与一外表面、多个开口以及一容置空间。形成一图案化金属层于绝缘盖体的外表面上。形成一表面处理层于图案化金属层上。提供一散热元件于绝缘盖体的容置空间中,且散热元件结构性连接于绝缘盖体,其中散热元件的表面已形成有一导热层,且绝缘盖体的开口暴露出部分导热层。
在本发明的一实施例中,上述形成绝缘盖体的开口的步骤,包括:对绝缘盖体的外表面照射一激光光束,以形成贯穿绝缘盖体的外表面与内表面的开口。
在本发明的一实施例中,上述的绝缘盖体包括多颗触媒颗粒,而于形成图案化金属层的方法更包括活化部分的触媒颗粒,而形成图案化金属层。
在本发明的一实施例中,上述形成图案化金属层的方法包括电镀法。
在本发明的一实施例中,上述形成绝缘盖体的方法包括注塑成形法。
在本发明的一实施例中,上述散热元件包括一散热块或一热管。
在本发明的一实施例中,上述导热层的材质包括铜、金或银。
本发明提供一种封装载板,适于承载至少一发热元件。封装载板包括一绝缘盖体、一图案化金属层、一表面处理层、一散热元件以及一导热层。绝缘盖体具有彼此相对的一内表面与一外表面、多个开口以及一容置空间。图案化金属层配置于绝缘盖体的外表面上。表面处理层配置于图案化金属层上。散热元件配置于绝缘盖体的容置空间中,且结构性连接于绝缘盖体。导热层配置于散热元件的表面上,且部分导热层位于散热元件与绝缘盖体之间,其中绝缘盖体的开口暴露出部分导热层,且至少一发热元件配置于对应开口之一所暴露出的部分导热层上。
在本发明的一实施例中,上述的散热元件包括一散热块或一热管。
在本发明的一实施例中,上述的导热层的材质包括铜、金或银。
在本发明的一实施例中,上述的绝缘盖体包括多颗触媒颗粒。
在本发明的一实施例中,上述的封装载板更包括一活化层,其中活化层是由触媒颗粒经活化后所形成,且活化层配置于开口所暴露出的部分导热层与散热元件之间。
基于上述,由于本发明的封装载板的设计是使将散热元件配置于绝缘盖体的容置空间中,且绝缘盖体的开口暴露出部分导热层。因此,当将发热元件配置于封装载板上时,发热元件所产生的热可直接通过导热层及散热元件而快速地传递至外界。如此一来,本发明的封装载板可以有效地排除发热元件所产生的热,进而改善发热元件的使用效率与使用寿命。再者,由于本发明的封装载板的周围皆可配置发热元件,因此可呈现三维多面体的发光效果。
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附附图作详细说明如下。
附图说明
图1A至图1D为本发明的一实施例的一种封装载板的制作方法的剖面示意图;
图1E为本发明的一实施例的一种封装载板的剖面示意图;
图2为图1D的封装载板承载一发热元件的剖面示意图。
主要元件符号说明
10:发热元件
20:焊线
30:封装胶体
100、100b:封装载板
110:绝缘盖体
112:内表面
114:外表面
116:容置空间
118:开口
119:卡扣部
120:图案化金属层
130:表面处理层
140a、140b:散热元件
142:突出部
144:鳍片部
150:导热层
具体实施方式
图1A至图1D为本发明的一实施例的一种封装载板的制作方法的剖面示意图。请先参考图1A,依照本实施例的封装载板的制作方法,首先,提供一绝缘盖体110,其中绝缘盖体110具有彼此相对的一内表面112与一外表面114、一容置空间116及多个开口118。于此,绝缘盖体110的形状例如是一ㄇ字型,而绝缘盖体110更具有多个卡扣部119。但必须说明的是,在其他实施例中,绝缘盖体110也可不具有这些卡扣部119。此外,形成绝缘盖体110的方法例如是注塑成形法(injectionmolding)。
接着,请参考图1B,形成一图案化金属层120于绝缘盖体120的部分外表面114上,其中形成图案化金属层120的方法例如是电镀法,如化学镀或溅镀法。值得一提的是,在其他未绘示的实施例中,若绝缘盖体包括多颗触媒颗粒,则可通过对绝缘盖体的外表面照射一激光光束,以活化部分的触媒颗粒,来形成图案化金属层。
之后,请参考图1C,形成一表面处理层130于图案化金属层120上,其中表面处理层130完全包覆图案化金属层120,且形成表面处理层130的方法包括电镀法,而表面处理层130例如是由一镍层、一金层或一镍金复合层所构成。
最后,请参考图1D,提供一散热元件140a于绝缘盖体110的容置空间116中,且结构性连接于绝缘盖体110,其中散热元件140a例如是通过卡扣于绝缘盖体110的这些卡扣部119而与固定于绝缘盖体110上。当然,在其他未绘示的实施例中,散热元件140a与绝缘盖体110也可通过螺丝锁固、粘着剂、低温融合或电镀的方式而连接在一起,在此并不加以限制。至此,以完成封装载板100的制作。
更具体来说,本实施例的散热元件140a的表面已形成有一导热层150,且绝缘盖体110的这些开口118暴露出部分导热层150,而散热元件140a包括一突出部142以及多个连接突出部142的鳍片部144,且突出部142配置于容置空间116中。值得一提的是,本实施例并不限定散热元件140a的形态,虽然此处所提及的散热元件140a是由突出部142与鳍片部144所构成,但在其他未绘示的实施例中,散热元件的型态也可仅为一散热块(意即无鳍片部);或者是,请参考图1E,封装载板100b的散热元件140b也可为一热管。也就是说,本实施例的散热元件140a的型态仅为举例说明,且在此并不对散热元件140a的型态作限制。
在结构上,请再参考图1D,本实施例的封装载板100包括绝缘盖体110、图案化金属层120、表面处理层130、散热元件140a及一导热层150。绝缘盖体110具有彼此相对的内表面112与外表面114、容置空间116、这些开口118以及这些卡扣部119。图案化金属层120配置于绝缘盖体110的外表面114上。表面处理层130配置于图案化金属层120上。散热元件150配置于绝缘盖体110的容置空间116中,且结构性连接于绝缘盖体110。导热层150配置于散热元件140a的表面上,且部分导热层150位于散热元件140a与绝缘盖体110之间,其中绝缘盖体110的这些开口118暴露出部分导热层150。
图2为图1D的封装载板承载一发热元件的剖面示意图。请参考图2,在本实施例中,封装载板100适于承载至少一发热元件10(图2中示意地绘示5个),其中发热元件10配置于对应开口118所暴露出的部分导热层150上,而发热元件10例如是电子芯片或光电元件,但并不以此为限。举例来说,电子芯片可以是集成电路芯片,其例如为绘图芯片、存储器芯片或是芯片模块。光电元件例如是发光二极管(LED)、激光二极管或气体放电光源等。在此,发热元件10是以发光二极管(LED)作为举例说明。
详细来说,发热元件10(例如是发光二极管)可通过多条焊线20以打线接合的方式而电连接至位于图案化金属层120上的表面处理层130,且也可通过一封装胶体30来包覆发热元件10、这些焊线20以及部分封装载板100,用以保护发热元件10与这些焊线20及封装载板100之间的电连接关系。由于本实施例的发热元件10是配置于这些开口118所暴露出部分导热层150上,因此封装载板100的周围皆可配置发热元件10。如此一来,可呈现三维多面体的发光效果,意即可同时具有正面发光与侧面发光的效果。
再者,由于散热元件140a是配置于绝缘盖板110的容置空间116中,且绝缘盖板110的这些开口118暴露出部分导热层150。因此,当将发热元件10配置于封装载板100的部分导热层150上时,发热元件10所产生的热可直接通过位于导热层150以及散热元件140a而快速地传递至外界。如此一来,本实施例的封装载板100可以有效地排除发热元件10所产生的热,进而改善发热元件10的使用效率与使用寿命。
此外,由于绝缘盖体110配置于散热元件140a上,因此当发热元件10(例如是发光二极管)通过焊线20而电连接至位于图案化金属层120上的表面处理层130时,绝缘盖体110可使位于图案化金属层120上的表面处理层130与位于绝缘盖体110下方的导热层150呈现电性绝缘,可避免产生短路现象。
综上所述,由于本发明的封装载板的设计是将散热元件配置于绝缘盖体的容置空间中,且绝缘盖体的开口暴露出部分导热层。因此,当将发热元件配置于封装载板上时,发热元件所产生的热可直接通过导热层及散热元件而快速地传递至外界。如此一来,本发明的封装载板可以有效地排除发热元件所产生的热,进而改善发热元件的使用效率与使用寿命。再者,由于本发明的封装载板的周围皆可配置发热元件,因此可呈现三维多面体的发光效果,意即可同时具有正面发光与侧面发光的效果,可增加其应用性。
虽然结合以上实施例揭露了本发明,然而其并非用以限定本发明,任何所属技术领域中熟悉此技术者,在不脱离本发明的精神和范围内,可作些许的更动与润饰,故本发明的保护范围应以附上的权利要求所界定的为准。
Claims (5)
1.一种封装载板的制作方法,包括:
提供一绝缘盖体,该绝缘盖体具有彼此相对的一内表面与一外表面、多个开口以及一容置空间,其中该绝缘盖体包括多颗触媒颗粒;
形成一图案化金属层于该绝缘盖体的该外表面上,其中形成该图案化金属层的方法包括对该绝缘盖体的该外表面照射一激光光束,活化部分的该些触媒颗粒;
形成一表面处理层于该图案化金属层上;以及
提供一散热元件于该绝缘盖体的该容置空间中,且该散热元件结构性连接于该绝缘盖体,其中该散热元件的表面已形成有一导热层,且该绝缘盖体的该些开口暴露出部分该导热层。
2.如权利要求1所述的封装载板的制作方法,其中形成该绝缘盖体的该些开口的步骤,包括:
对该绝缘盖体的该外表面照射一激光光束,以形成该些贯穿该绝缘盖体的该外表面与该内表面的开口。
3.如权利要求1所述的封装载板的制作方法,其中形成该绝缘盖体的方法包括注塑成形法。
4.如权利要求1所述的封装载板的制作方法,其中该散热元件包括散热块或热管。
5.如权利要求1所述的封装载板的制作方法,其中该导热层的材质包括铜、金或银。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100115471A TWI446591B (zh) | 2011-05-03 | 2011-05-03 | 封裝載板及其製作方法 |
TW100115471 | 2011-05-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102769075A CN102769075A (zh) | 2012-11-07 |
CN102769075B true CN102769075B (zh) | 2016-06-08 |
Family
ID=47089542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110158440.6A Expired - Fee Related CN102769075B (zh) | 2011-05-03 | 2011-06-14 | 封装载板及其制作方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9153521B2 (zh) |
JP (1) | JP5436596B2 (zh) |
CN (1) | CN102769075B (zh) |
TW (1) | TWI446591B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11574891B2 (en) | 2021-01-26 | 2023-02-07 | Nanya Technology Corporation | Semiconductor device with heat dissipation unit and method for fabricating the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201508853U (zh) * | 2009-09-21 | 2010-06-16 | 光宏精密股份有限公司 | 半导体承载结构 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW457836B (en) | 1999-06-09 | 2001-10-01 | Phoenix Prec Technology Corp | High heat dissipation type integrated circuit substrate structure and fabrication process |
US6599768B1 (en) * | 2002-08-20 | 2003-07-29 | United Epitaxy Co., Ltd. | Surface mounting method for high power light emitting diode |
TWI222195B (en) | 2003-04-21 | 2004-10-11 | Phoenix Prec Technology Corp | Method for fabricating heat sink of semiconductor packaging substrate |
JP4810097B2 (ja) * | 2005-01-14 | 2011-11-09 | 株式会社リコー | 立体回路基板、電気回路構造体、及び立体回路基板の製造方法 |
KR101305884B1 (ko) | 2006-01-06 | 2013-09-06 | 엘지이노텍 주식회사 | 발광 다이오드 패키지, 이의 제조 방법 및 이를 구비하는백라이트 유닛 |
TW200743228A (en) | 2006-05-05 | 2007-11-16 | bing-shan Wang | Manufacturing method of light-emitting diode base and product thereof |
US7804147B2 (en) | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
US7687722B2 (en) * | 2006-10-03 | 2010-03-30 | Endicott Interconnect Technologies, Inc. | Halogen-free circuitized substrate with reduced thermal expansion, method of making same, multilayered substrate structure utilizing same, and information handling system utilizing same |
JP2008135532A (ja) * | 2006-11-28 | 2008-06-12 | Kyocera Corp | 放熱部材およびこれを用いた電子部品収納用パッケージおよび電子装置 |
TWI367573B (en) | 2007-01-31 | 2012-07-01 | Young Lighting Technology Inc | Light emitting diode package and manufacturing method thereof |
US7948076B2 (en) * | 2008-03-25 | 2011-05-24 | Bridge Semiconductor Corporation | Semiconductor chip assembly with post/base heat spreader and vertical signal routing |
CN101605431B (zh) * | 2008-06-12 | 2012-12-05 | 欣兴电子股份有限公司 | 模塑内连装置的制造方法 |
CN101640972B (zh) * | 2008-07-28 | 2011-09-07 | 欣兴电子股份有限公司 | 一种电路板结构 |
JP5388598B2 (ja) * | 2008-11-14 | 2014-01-15 | カルソニックカンセイ株式会社 | 素子の放熱構造 |
US20120061716A1 (en) * | 2009-04-10 | 2012-03-15 | Nationstar Optoelectronics Co., Ltd. | Manufacturing method for power led head-dissipating substrate and power led product and the products thereof |
CN102025020B (zh) * | 2009-09-18 | 2014-03-26 | 上海莫仕连接器有限公司 | 移动通讯装置的模块化天线装置 |
WO2011122228A1 (ja) * | 2010-03-31 | 2011-10-06 | 日本電気株式会社 | 半導体内蔵基板 |
TWI485823B (zh) * | 2010-07-08 | 2015-05-21 | Subtron Technology Co Ltd | 半導體封裝結構及半導體封裝結構的製作方法 |
CN201805617U (zh) * | 2010-09-03 | 2011-04-20 | 光宏精密股份有限公司 | 立体电路元件 |
-
2011
- 2011-05-03 TW TW100115471A patent/TWI446591B/zh not_active IP Right Cessation
- 2011-06-14 CN CN201110158440.6A patent/CN102769075B/zh not_active Expired - Fee Related
- 2011-06-16 US US13/162,549 patent/US9153521B2/en not_active Expired - Fee Related
-
2012
- 2012-02-28 JP JP2012042238A patent/JP5436596B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201508853U (zh) * | 2009-09-21 | 2010-06-16 | 光宏精密股份有限公司 | 半导体承载结构 |
Also Published As
Publication number | Publication date |
---|---|
US9153521B2 (en) | 2015-10-06 |
JP5436596B2 (ja) | 2014-03-05 |
TW201246612A (en) | 2012-11-16 |
TWI446591B (zh) | 2014-07-21 |
US20120279962A1 (en) | 2012-11-08 |
CN102769075A (zh) | 2012-11-07 |
JP2012235090A (ja) | 2012-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102629560B (zh) | 封装载板及其制作方法 | |
CN102610583B (zh) | 封装载板及其制作方法 | |
CN102610709B (zh) | 封装载板及其制作方法 | |
CN102272951B (zh) | 多芯片发光二极管模块 | |
CN102769076B (zh) | 封装载板的制作方法 | |
CN102832314B (zh) | 封装载板及封装结构 | |
CN202067790U (zh) | 圆片级玻璃型腔的硅通孔led封装结构 | |
CN103579011A (zh) | 封装载板及其制作方法 | |
CN105431938B (zh) | 改善散热特性的半导体装置 | |
CN103765585B (zh) | 具有倒装芯片式安装的固态辐射传感器的固态辐射传感器装置及其相关联系统及方法 | |
KR101645009B1 (ko) | 방열기판을 갖는 led 패키지 | |
KR101051488B1 (ko) | 발광 다이오드 유닛의 제조 방법과, 이 방법에 의하여 제조된 발광 다이오드 유닛 | |
CN102790140B (zh) | 封装结构及其制作方法 | |
CN103199173A (zh) | 发光二极管芯片、封装基板、封装结构及其制法 | |
CN102769075B (zh) | 封装载板及其制作方法 | |
CN103219317A (zh) | 集成电路封装以及用于制造集成电路封装的方法 | |
CN102214652A (zh) | 一种led封装结构及其制备方法 | |
CN102226995B (zh) | 一种led封装结构及其制备方法 | |
CN103165476A (zh) | 集成电路封装以及封装方法 | |
KR101136392B1 (ko) | 광 패키지 및 그 제조 방법 | |
KR101146656B1 (ko) | 광 패키지 및 그 제조 방법 | |
KR101051489B1 (ko) | 발광 다이오드 유닛의 제조 방법과, 이 방법에 의하여 제조된 발광 다이오드 유닛 | |
KR101146659B1 (ko) | 광 패키지 및 그 제조 방법 | |
KR101168420B1 (ko) | 테이프 타입 led 패키지 및 그 제조 방법 | |
KR20080029571A (ko) | 발광 다이오드 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160608 Termination date: 20200614 |