CN102766857B - 等离子体处理系统 - Google Patents

等离子体处理系统 Download PDF

Info

Publication number
CN102766857B
CN102766857B CN201210137245.XA CN201210137245A CN102766857B CN 102766857 B CN102766857 B CN 102766857B CN 201210137245 A CN201210137245 A CN 201210137245A CN 102766857 B CN102766857 B CN 102766857B
Authority
CN
China
Prior art keywords
electrode bus
coupled
electrode
bus
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210137245.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN102766857A (zh
Inventor
托马斯·V·博尔登
艾尔玛·M·卡利卡
罗伯特·S·康德拉少弗
路易斯·费耶罗
詹姆士·D·格蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordson Corp
Original Assignee
Nordson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordson Corp filed Critical Nordson Corp
Publication of CN102766857A publication Critical patent/CN102766857A/zh
Application granted granted Critical
Publication of CN102766857B publication Critical patent/CN102766857B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32577Electrical connecting means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges
    • H05H1/4652Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN201210137245.XA 2011-05-04 2012-05-04 等离子体处理系统 Expired - Fee Related CN102766857B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/100,605 US8333166B2 (en) 2011-05-04 2011-05-04 Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
US13/100,605 2011-05-04

Publications (2)

Publication Number Publication Date
CN102766857A CN102766857A (zh) 2012-11-07
CN102766857B true CN102766857B (zh) 2016-04-13

Family

ID=47089447

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210137245.XA Expired - Fee Related CN102766857B (zh) 2011-05-04 2012-05-04 等离子体处理系统

Country Status (5)

Country Link
US (1) US8333166B2 (https=)
JP (1) JP6068825B2 (https=)
KR (1) KR101935766B1 (https=)
CN (1) CN102766857B (https=)
TW (1) TWI618456B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US8547085B2 (en) * 2008-07-07 2013-10-01 Lam Research Corporation Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber
US8179152B2 (en) 2008-07-07 2012-05-15 Lam Research Corporation Passive capacitively-coupled electrostatic (CCE) probe arrangement for detecting plasma instabilities in a plasma processing chamber
KR101136728B1 (ko) * 2010-10-18 2012-04-20 주성엔지니어링(주) 기판처리장치와 그의 분해 및 조립방법
US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
TWI473382B (zh) * 2012-09-28 2015-02-11 Au Optronics Corp 無線電力傳輸裝置
WO2015049781A1 (ja) 2013-10-04 2015-04-09 東芝三菱電機産業システム株式会社 電源装置
JP5857207B2 (ja) * 2013-11-18 2016-02-10 パナソニックIpマネジメント株式会社 プラズマ処理装置及び方法
JP6726865B2 (ja) * 2015-06-05 2020-07-22 パナソニックIpマネジメント株式会社 プラズマ生成装置
CN105142324A (zh) * 2015-08-17 2015-12-09 深圳市华鼎星科技有限公司 一种线性等离子发生器
KR101881535B1 (ko) * 2017-02-24 2018-07-24 주식회사 뉴파워 프라즈마 수동소자를 구비한 전력공급장치 및 이를 이용한 플라즈마 점화를 위한 전력제공방법
KR101881536B1 (ko) * 2017-02-24 2018-07-24 주식회사 뉴파워 프라즈마 출력전류 제어가 가능한 전력공급장치 및 이를 이용한 전력공급방법
EP3367419B1 (de) * 2017-02-28 2019-08-14 Meyer Burger (Germany) AG Elektrodeneinheit mit einem internen elektrischen netzwerk zur zuführung von hochfrequenter spannung und trägeranordnung für eine plasmabehandlungsanlage
KR102038276B1 (ko) * 2017-04-12 2019-10-30 (주)아이작리서치 배치 타입의 플라즈마 원자층 증착 장치
US11143618B2 (en) * 2018-04-09 2021-10-12 Roche Sequencing Solutions, Inc. Fabrication of tunneling junctions with nanopores for molecular recognition
CN108787634A (zh) * 2018-07-19 2018-11-13 深圳市神州天柱科技有限公司 一种等离子清洗机
CN110042348A (zh) * 2019-03-12 2019-07-23 深圳奥拦科技有限责任公司 等离子表面处理装置及方法
CN110911262B (zh) * 2019-11-12 2022-07-22 北京北方华创微电子装备有限公司 电感耦合等离子体系统
WO2022011581A1 (en) * 2020-07-15 2022-01-20 Nordson Corporation Plasma treatment with isolated cooling paths
KR102405333B1 (ko) * 2020-11-25 2022-06-07 (주)이노플라즈텍 평판형 필터 전극을 이용한 분말 표면처리용 플라즈마 장치
WO2022126204A1 (en) * 2020-12-18 2022-06-23 Xefco Pty Ltd System for treatment of substrates
US12389521B2 (en) 2022-07-18 2025-08-12 Caps Medical Ltd. Plasma generating system
CN119896039A (zh) * 2022-07-18 2025-04-25 卡普斯医疗有限公司 等离子体生成系统
US11621587B1 (en) 2022-07-18 2023-04-04 Caps Medical Ltd. Configurable plasma generating system
US12542256B2 (en) 2022-11-21 2026-02-03 Applied Materials, Inc. Batch processing chambers for plasma-enhanced deposition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101420816A (zh) * 2007-10-22 2009-04-29 新动力等离子体株式会社 容性耦合等离子体反应器
CN102027810A (zh) * 2008-05-14 2011-04-20 应用材料股份有限公司 使用rf功率传递的时间分解调频方案以用于脉冲等离子体工艺的方法及设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2961103B1 (ja) * 1998-04-28 1999-10-12 三菱重工業株式会社 プラズマ化学蒸着装置
GB2387023B (en) * 1998-12-17 2003-12-03 Trikon Holdings Ltd Inductive coil assembly
CN1875454A (zh) 2003-10-28 2006-12-06 诺信公司 等离子处理系统和等离子处理工艺
US7993489B2 (en) * 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
US20090255630A1 (en) * 2005-04-28 2009-10-15 Hitachi Kokusai Electric Inc. Substrate processing apparatus and electrode member
JP5168907B2 (ja) * 2007-01-15 2013-03-27 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
TWI440405B (zh) * 2007-10-22 2014-06-01 New Power Plasma Co Ltd 電容式耦合電漿反應器
US8372238B2 (en) 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101420816A (zh) * 2007-10-22 2009-04-29 新动力等离子体株式会社 容性耦合等离子体反应器
CN102027810A (zh) * 2008-05-14 2011-04-20 应用材料股份有限公司 使用rf功率传递的时间分解调频方案以用于脉冲等离子体工艺的方法及设备

Also Published As

Publication number Publication date
TWI618456B (zh) 2018-03-11
JP2012238593A (ja) 2012-12-06
TW201251520A (en) 2012-12-16
CN102766857A (zh) 2012-11-07
KR20120125177A (ko) 2012-11-14
US20120279658A1 (en) 2012-11-08
US8333166B2 (en) 2012-12-18
KR101935766B1 (ko) 2019-01-08
JP6068825B2 (ja) 2017-01-25

Similar Documents

Publication Publication Date Title
CN102766857B (zh) 等离子体处理系统
US8119532B2 (en) Inductively coupled dual zone processing chamber with single planar antenna
TWI519212B (zh) 具有限制處理腔室及有電極之內滙流電連接器之多電極電漿處理系統
US5464476A (en) Plasma processing device comprising plural RF inductive coils
US20100074807A1 (en) Apparatus for generating a plasma
US20180308663A1 (en) Plasma reactor with phase shift applied across electrode array
CN112470552A (zh) 等离子体处理装置
US20160326651A1 (en) Substrate processing apparatus
JP3181473B2 (ja) プラズマ処理装置
WO1995015672A1 (en) Method and apparatus for planar plasma processing
US20180308664A1 (en) Plasma reactor with filaments and rf power applied at multiple frequencies
KR101626039B1 (ko) 대면적 플라즈마를 이용한 연속 기판 처리 시스템
CN219591343U (zh) 电感耦合等离子体装置以及镀膜设备
WO2018200409A1 (en) Applying power to electrodes of plasma reactor
KR101572100B1 (ko) 복합 주파수를 이용한 대면적 플라즈마 반응기
US20180308667A1 (en) Plasma reactor with groups of electrodes
KR101507390B1 (ko) 용량 결합 플라즈마 반응기
WO2018009790A1 (en) Apparatus for depositing metal films with plasma treatment
KR100845903B1 (ko) 다중 코어 플라즈마 발생기를 갖는 플라즈마 반응기
WO2020239193A1 (en) Apparatus for heat treatment, substrate processing system and method for processing a substrate
JPH02294491A (ja) マイクロ波プラズマ処理装置
CN116169001A (zh) 电感耦合等离子体装置以及镀膜设备
KR20110134798A (ko) 용량 결합 플라즈마 반응기
KR20120004900A (ko) 선형 스퍼터링 반응기를 갖는 플라즈마 챔버
KR20110135445A (ko) 다중 배기구조를 갖는 플라즈마 발생기 및 이를 구비한 플라즈마 처리 시스템

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160413