CN102760476A - 可扩缩的存储器系统 - Google Patents

可扩缩的存储器系统 Download PDF

Info

Publication number
CN102760476A
CN102760476A CN2012101119432A CN201210111943A CN102760476A CN 102760476 A CN102760476 A CN 102760476A CN 2012101119432 A CN2012101119432 A CN 2012101119432A CN 201210111943 A CN201210111943 A CN 201210111943A CN 102760476 A CN102760476 A CN 102760476A
Authority
CN
China
Prior art keywords
memory devices
memory
data
order
command
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012101119432A
Other languages
English (en)
Chinese (zh)
Inventor
金镇祺
吴学俊
潘弘柏
S·普日贝尔斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/840,692 external-priority patent/US7904639B2/en
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of CN102760476A publication Critical patent/CN102760476A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
CN2012101119432A 2006-08-22 2007-08-22 可扩缩的存储器系统 Pending CN102760476A (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US83932906P 2006-08-22 2006-08-22
US60/839,329 2006-08-22
US86877306P 2006-12-06 2006-12-06
US60/868,773 2006-12-06
US90200307P 2007-02-16 2007-02-16
US60/902,003 2007-02-16
US89270507P 2007-03-02 2007-03-02
US60/892,705 2007-03-02
US11/840,692 US7904639B2 (en) 2006-08-22 2007-08-17 Modular command structure for memory and memory system
US11/840,692 2007-08-17

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2007800313409A Division CN101506895B (zh) 2006-08-22 2007-08-22 可扩缩的存储器系统

Publications (1)

Publication Number Publication Date
CN102760476A true CN102760476A (zh) 2012-10-31

Family

ID=39106444

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2007800313409A Expired - Fee Related CN101506895B (zh) 2006-08-22 2007-08-22 可扩缩的存储器系统
CN2012101119432A Pending CN102760476A (zh) 2006-08-22 2007-08-22 可扩缩的存储器系统

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2007800313409A Expired - Fee Related CN101506895B (zh) 2006-08-22 2007-08-22 可扩缩的存储器系统

Country Status (7)

Country Link
EP (1) EP2062261A4 (fr)
JP (2) JP5575474B2 (fr)
KR (2) KR101476515B1 (fr)
CN (2) CN101506895B (fr)
CA (1) CA2659828A1 (fr)
TW (1) TWI437577B (fr)
WO (1) WO2008022454A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110364196A (zh) * 2018-03-26 2019-10-22 爱思开海力士有限公司 存储器系统及其操作方法
CN111477255A (zh) * 2019-01-24 2020-07-31 西部数据技术公司 高速数据接口的高电压保护

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7865756B2 (en) 2007-03-12 2011-01-04 Mosaid Technologies Incorporated Methods and apparatus for clock signal synchronization in a configuration of series-connected semiconductor devices
US8467486B2 (en) 2007-12-14 2013-06-18 Mosaid Technologies Incorporated Memory controller with flexible data alignment to clock
US8781053B2 (en) 2007-12-14 2014-07-15 Conversant Intellectual Property Management Incorporated Clock reproducing and timing method in a system having a plurality of devices
EP2329496A4 (fr) * 2008-09-30 2012-06-13 Mosaid Technologies Inc Système de mémoire connecté en série présentant un ajustement de délai de sortie
US7957173B2 (en) * 2008-10-14 2011-06-07 Mosaid Technologies Incorporated Composite memory having a bridging device for connecting discrete memory devices to a system
WO2010069045A1 (fr) * 2008-12-18 2010-06-24 Mosaid Technologies Incorporated Procédé de détection d'erreurs et système comportant un ou plusieurs dispositifs de mémoire
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US20110258366A1 (en) * 2010-04-19 2011-10-20 Mosaid Technologies Incorporated Status indication in a system having a plurality of memory devices
WO2011134051A1 (fr) * 2010-04-26 2011-11-03 Mosaid Technologies Incorporated Mémoire connectée en série dotée d'une interface de données subdivisée
US8856482B2 (en) * 2011-03-11 2014-10-07 Micron Technology, Inc. Systems, devices, memory controllers, and methods for memory initialization
US9239806B2 (en) * 2011-03-11 2016-01-19 Micron Technology, Inc. Systems, devices, memory controllers, and methods for controlling memory
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
CN102508797B (zh) * 2011-10-27 2015-02-11 忆正存储技术（武汉）有限公司 闪存控制扩展模块、控制器、存储系统及其数据传输方法
TWI581267B (zh) * 2011-11-02 2017-05-01 諾瓦晶片加拿大公司 快閃記憶體模組及記憶體子系統
US8825967B2 (en) 2011-12-08 2014-09-02 Conversant Intellectual Property Management Inc. Independent write and read control in serially-connected devices
US8966151B2 (en) * 2012-03-30 2015-02-24 Spansion Llc Apparatus and method for a reduced pin count (RPC) memory bus interface including a read data strobe signal
US9760149B2 (en) * 2013-01-08 2017-09-12 Qualcomm Incorporated Enhanced dynamic memory management with intelligent current/power consumption minimization
KR20150110918A (ko) 2014-03-21 2015-10-05 에스케이하이닉스 주식회사 반도체 메모리 장치
US9792227B2 (en) * 2014-08-19 2017-10-17 Samsung Electronics Co., Ltd. Heterogeneous unified memory
JP6453718B2 (ja) * 2015-06-12 2019-01-16 東芝メモリ株式会社 半導体記憶装置及びメモリシステム
KR102296740B1 (ko) * 2015-09-16 2021-09-01 삼성전자 주식회사 메모리 장치 및 그것을 포함하는 메모리 시스템
FR3041806B1 (fr) * 2015-09-25 2017-10-20 Stmicroelectronics Rousset Dispositif de memoire non volatile, par exemple du type eeprom, ayant une capacite memoire importante, par exemple 16mbits
KR102457820B1 (ko) * 2016-03-02 2022-10-24 한국전자통신연구원 메모리 인터페이스 장치
KR102532528B1 (ko) * 2016-04-07 2023-05-17 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법
KR102514717B1 (ko) * 2016-10-24 2023-03-27 삼성전자주식회사 메모리 컨트롤러 및 이를 포함하는 메모리 시스템
KR102336666B1 (ko) * 2017-09-15 2021-12-07 삼성전자 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
US10372330B1 (en) 2018-06-28 2019-08-06 Micron Technology, Inc. Apparatuses and methods for configurable memory array bank architectures
KR20210145480A (ko) 2020-05-25 2021-12-02 삼성전자주식회사 디스플레이 구동 장치 및 디스플레이 구동 장치를 포함하는 디스플레이 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07327179A (ja) * 1994-05-31 1995-12-12 Canon Inc 複数映像切替装置
US5729683A (en) * 1995-05-18 1998-03-17 Compaq Computer Corporation Programming memory devices through the parallel port of a computer system
US6144576A (en) * 1998-08-19 2000-11-07 Intel Corporation Method and apparatus for implementing a serial memory architecture
JP3853537B2 (ja) * 1999-04-30 2006-12-06 株式会社日立製作所 半導体メモリファイルシステム
US6449308B1 (en) * 1999-05-25 2002-09-10 Intel Corporation High-speed digital distribution system
US7356639B2 (en) * 2000-01-05 2008-04-08 Rambus Inc. Configurable width buffered module having a bypass circuit
TW504694B (en) * 2000-01-12 2002-10-01 Hitachi Ltd Non-volatile semiconductor memory device and semiconductor disk device
JP2001266579A (ja) * 2000-01-12 2001-09-28 Hitachi Ltd 不揮発性半導体記憶装置および半導体ディスク装置
US6754129B2 (en) * 2002-01-24 2004-06-22 Micron Technology, Inc. Memory module with integrated bus termination
US20040022022A1 (en) * 2002-08-02 2004-02-05 Voge Brendan A. Modular system customized by system backplane
US7308524B2 (en) * 2003-01-13 2007-12-11 Silicon Pipe, Inc Memory chain
JP2004110849A (ja) * 2003-12-01 2004-04-08 Toshiba Corp 半導体システム及びメモリカード
US8375146B2 (en) * 2004-08-09 2013-02-12 SanDisk Technologies, Inc. Ring bus structure and its use in flash memory systems

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110364196A (zh) * 2018-03-26 2019-10-22 爱思开海力士有限公司 存储器系统及其操作方法
CN111477255A (zh) * 2019-01-24 2020-07-31 西部数据技术公司 高速数据接口的高电压保护
CN111477255B (zh) * 2019-01-24 2023-03-31 西部数据技术公司 高速数据接口的高电压保护

Also Published As

Publication number Publication date
TWI437577B (zh) 2014-05-11
EP2062261A1 (fr) 2009-05-27
KR101476463B1 (ko) 2014-12-24
WO2008022454A1 (fr) 2008-02-28
CA2659828A1 (fr) 2008-02-28
JP2012226786A (ja) 2012-11-15
TW200828338A (en) 2008-07-01
JP5575474B2 (ja) 2014-08-20
EP2062261A4 (fr) 2010-01-06
JP2010501916A (ja) 2010-01-21
KR20090045366A (ko) 2009-05-07
CN101506895A (zh) 2009-08-12
KR101476515B1 (ko) 2014-12-24
KR20120110157A (ko) 2012-10-09
CN101506895B (zh) 2012-06-27

Similar Documents

Publication Publication Date Title
CN101506895B (zh) 可扩缩的存储器系统
US8671252B2 (en) Scalable memory system
TWI446356B (zh) 具有輸出控制之記憶體及其系統
US10223003B2 (en) Method and system for accessing a flash memory device
KR20060127014A (ko) 비휘발성 메모리용 플렉시블 및 영역 효율성 컬럼 리던던시

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent for invention or patent application
CB02 Change of applicant information

Address after: Ontario, Canada

Applicant after: Examine Vincent Zhi Cai management company

Address before: Ontario, Canada

Applicant before: Mosaid Technologies Inc.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: MOSAID TECHNOLOGIES INC. TO: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.

AD01 Patent right deemed abandoned

Effective date of abandoning: 20160203

C20 Patent right or utility model deemed to be abandoned or is abandoned