CN102759768B - Optical filter - Google Patents
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- CN102759768B CN102759768B CN201210269188.0A CN201210269188A CN102759768B CN 102759768 B CN102759768 B CN 102759768B CN 201210269188 A CN201210269188 A CN 201210269188A CN 102759768 B CN102759768 B CN 102759768B
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Abstract
The invention discloses an optical filter, which comprises a substrate and optical films on the two sides of the substrate, wherein the substrate is a blue plastic substrate; a blue glass substrate is substituted by the blue plastic substrate; and thus, the production cost, the product weight and the product size can be reduced and the yield of products can be improved. In a preferred technical scheme, in order to improve the adhesion between the substrate and the optical films on the two sides of the substrate, an HfO2 transition layer is arranged between the substrate and the optical films. In order to improve the deformation of the blue plastic substrate, the optical films are an infrared ray isolating filter film on one side of the substrate and an infrared-ultraviolet ray isolating filter film on the other side of the substrate. The optical filter has the advantages of low cost, light weight, small size and capability of being widely used for card type cameras, mobile phone cameras, monitoring systems and the like with small image chip areas, particularly intelligent mobile phones increasingly used at present.
Description
Technical field
The present invention relates to the filter field for digital vedio recording, particularly a kind of low stress plastic optics wave filter being mainly used in the image acquisition systems such as card type digital camera, mobile phone camera and monitoring camera.
Background technology
For CCD image sensor (the Charge-coupled Device of digital imaging technique, charge coupled cell) and imageing sensor CMOS (Complementary Metal-Oxide Semiconductor, metal oxide semiconductor device), be a kind of photodetector of discrete pixels.According to Nyquist's theorem, a discernmible most high spatial frequency of imageing sensor equals the half of its spatial sampling frequencies, and this frequency is called nyquist limit frequency.When obtaining target image with CCD image sensor and imageing sensor CMOS shooting, when sampled images exceedes the nyquist limit frequency of system, high-frequency harmonic meeting in imageing sensor and fundamental frequency cause folded matrix effect, produce Moire fringe, at this moment will to produce periodic frequency spectrum overlapping for image, even there is color fringe, have a strong impact on image definition, therefore must take measures to eliminate the image disruption that this spatial high-frequency harmonic wave causes, in order to eliminate the image disruption that this spatial high-frequency harmonic wave causes, optical filter arises at the historic moment like this.Optical filter can suppress the spectral aliasing of optical imagery on CCD image sensor and imageing sensor CMOS photosurface, improves image quality.
Now comprise substrate and optical thin film with optical filter, optical thin film be arranged on substrate side antireflecting film and be arranged on substrate opposite side every infrared-ultraviolet filtering film, a kind of special smalt of usual employing is as substrate, the feature of this smalt substrate is: in transmission-cut-off zone of transition, the wavelength of transmissivity T=50% is 650 ± 10nm, and this wavelength can not produce any movement because of the angle of incidence of light change of target image, thus can obtain the image of homogeneous color.Two surfaces of smalt substrate usually plate antireflecting film respectively and every infrared-ultraviolet filtering film to form optical filter.The advantage of the optical filter of this employing smalt is: 1). because smalt substrate thickness needs about 0.5mm just can obtain inadequate satisfactory transmission-cut-off zone of transition steepness, substrate is thicker, and thus the smalt substrate deformation that causes of membrane stress is very little; 2). because smalt substrate and optical thin film are all inorganic material, thus between smalt substrate and optical thin film, there is excellent adhesion.But its shortcoming is clearly: be first that this smalt substrate only has Japan exclusively can confession so far, because supply falls short of demand, expensive, and Heavy Weight, volume are large; Next is that the machinery of this smalt, chemical property are poor, very easily broken, corrosion when cutting into small pieces after plated film, and fabrication yield is low; What is more, and before the optical filter of this employing smalt is directly attached to CCD image sensor or imageing sensor CMOS, thus, the thickness of this optical filter easily causes very important aberration.
Because blue plastics can obtain the wavelength 650 ± 10nm of transmissivity T=50% in the transmission similar to smalt-cut-off zone of transition equally, and this wavelength does not produce mobile with the angle of incidence of light change of target image, thus can obtain the image effect of homogeneous color equally.After substrate is changed to blue plastic substrate from smalt substrate, thinner blue plastic substrate just can have the transmission-cut-off zone of transition of enough steepness, but there are two new problems on the whole: blue plastic substrate does thin rear yielding and between blue plastic substrate and optical thin film tack to be needed to improve further, if these two new problems are properly settled, then this optical filter not only can reduce price, reduce volume and weight, and because adopting the optical filter thickness of blue plastics thinning, aberration reduces and produces the image effect than adopting the optical filter of smalt better.
Summary of the invention
For overcoming the problems referred to above, the invention provides a kind of optical filter, adopting blue plastic substrate to replace smalt substrate, production cost can be reduced, alleviate product weight, reduce small product size and improve the yield rate of product.
A kind of optical filter, comprise substrate and be arranged on the blooming of described substrate both sides, described substrate is blue plastic substrate.
As preferably, the thickness of described blue plastic substrate is 0.05mm ~ 0.2mm, and the blue plastic substrate of above-mentioned thickness has the transmission of enough steepness-cut-off zone of transition, and because of Thickness Ratio smalt substrate much thin, the aberration such as spherical aberration, aberration can reduce greatly, and picture quality can significantly improve.Further preferably, the thickness of described blue plastic substrate is 0.08mm ~ 0.12mm, keeps the transmission-cut-off zone of transition with enough steepness, and then improve picture quality while reducing substrate thickness.Further preferred, the thickness of described blue plastic substrate is 0.1mm, and the model adopting Japanese JSR to produce is the blue plastic substrate of FLXL100AA.
In order to improve substrate and substrate both sides blooming between tack, as preferably, between described substrate and blooming, be provided with HfO
2transition bed.Adhesion between substrate and blooming is by determining strong the making a concerted effort between substrate and blooming, because attachment appears at bi-material surface, therefore it not only with substrate and blooming surface energy S separately
1and S
2relevant, but also the interfacial energy S common with bi-material
12relevant, energy of attachment can be expressed as: E
ad=S
1+ S
2-S
12.Known based on this principle, the bi-material adhesion of high surface energy is maximum, and the bi-material adhesion of low-surface-energy is minimum, therefore for guaranteeing enough adhesion, at blue plastic substrate S
1when less, S can only be selected
2high-temperature oxide HfO large as far as possible
2compensate as transition bed.Further, interfacial energy S
12two kinds of atom differences with contact interface increase and increase, for blue plastic substrate, in order to reduce S
12, propose employing low energy ion assisted deposition, this can increase the kinetic energy of deposit molecule on the one hand, also can increase energy of activation and the microroughness of substrate surface on the other hand, increases surface attachment energy, for this reason, as preferred further, and described HfO
2transition bed is before being coated with and be coated with in process and all adopt bundle pressure to carry out auxiliary bombardment, raising adhesion for the ion beam that 600V ~ 800V and line are 60mA ~ 80mA.HfO
2transition bed surface energy is very high, can improve the adhesion between blooming and blue plastic substrate to greatest extent, but in order to reduce HfO
2transition bed on the impact of filter optical characteristic, described HfO
2the thickness of transition bed is preferably 8nm ~ 20nm.
In order to improve the distortion of blue plastic substrate, as preferably, described blooming be arranged on substrate side every infrared filtering film and be arranged on substrate opposite side every infrared-ultraviolet filtering film, every infrared filtering film while guarantee visible region height transmission, by the infrared light of reflective stopping short-wave band 700 ~ 900nm, every infrared-ultraviolet filtering film except will ensureing the infrared light of visible region height transmittance and reflectance cut-off long-wave band 900 ~ 1200nm, also to end the ultraviolet light that CCD image sensor, imageing sensor CMOS are harmful to.Described every infrared filtering film by TiO
2high refractive index layer and SiO
2low-index film is alternately formed, described every infrared-ultraviolet filtering film also by SiO
2low-index film and TiO
2high refractive index layer is alternately formed.Due to TiO
2and SiO
2surface energy all enough large, its interface has enough strong adhesion, thus TiO
2high refractive index layer and SiO
2stronger adhesion is had between low-index film.
By blue plastic substrate both sides every infrared filtering film and regulate every the thickness of infrared-ultraviolet filtering film and make the stress in blue plastic substrate two faces be in balance, thus reduce the blue plastic substrate distortion because blooming stress causes.Even if but like this, sometimes stress still can not be offset completely, reason is being coated with every infrared filtering film with every infrared-ultraviolet filtering film point secondary of blue plastic substrate both sides, due to the difference of process conditions, stress is also not exclusively equal, thus needs the stress reducing by two film systems further, further preferably, the temperature of substrate is room temperature, to reduce thermal stress; Described TiO
2high refractive index layer and SiO
2the preparation of low-index film all adopts ion to assist, the condition that ion is auxiliary: bundle pressure is 600V ~ 800V, and line is 60mA ~ 80mA; Described TiO
2the preparation of high refractive index layer adopts Ti
3o
5evaporating materials, and 1 × 10
-2pa ~ 3 × 10
-2evaporate with the speed of 0.2nm/s ~ 0.8nm/s in Pa oxygen atmosphere; Described SiO
2the preparation of low-index film adopts SiO
2evaporating materials, and 1 × 10
-2pa ~ 3 × 10
-2evaporate with the speed of 0.8nm/s ~ 3.2nm/s in Pa oxygen atmosphere.The TiO prepared under this condition
2high refractive index layer and SiO
2low-index film can reduce every infrared filtering film and every infrared-ultraviolet filtering film to the stress of blue plastic substrate, thus make the distortion of blue plastic substrate very little.
Further preferably, described TiO in infrared filtering film
2high refractive index layer and SiO
2low-index film is total up to 20 ~ 28 layers, described TiO in infrared filtering film
2high refractive index layer (individual layer) thickness is 75nm ~ 95nm, described SiO in infrared filtering film
2low-index film (individual layer) thickness is 140nm ~ 155nm.Most preferred, described TiO in infrared filtering film
2high refractive index layer and SiO
2low-index film is total up to 24 layers, and the ground floor near substrate is TiO
2high refractive index layer, the second layer is SiO
2low-index film, replaces successively, and thickness is followed successively by 94.4nm, 154nm, 81.6nm, 145nm, 78.7nm, 142.3nm, 77.7nm, 141.3nm, 77.3nm, 140.9nm, 77.1nm, 140.6nm, 77.1nm, 140.7nm, 77.4nm, 140.8nm, 77.7nm, 141.4nm, 78.7nm, 143.1nm, 81.2nm, 148.2nm, 83.4nm, 153.6nm.Every infrared filtering film while guarantee visible region height transmission, by the infrared light of reflective stopping 700 ~ 900nm wavelength zone.Described SiO in infrared-ultraviolet filtering film
2low-index film and TiO
2high refractive index layer is total up to 17 ~ 21 layers, described SiO in infrared-ultraviolet filtering film
2low-index film (individual layer) thickness is 90nm ~ 191nm, described TiO in infrared-ultraviolet filtering film
2high refractive index layer (individual layer) thickness is 98nm ~ 116nm.Most preferred, described SiO in infrared-ultraviolet filtering film
2low-index film and TiO
2high refractive index layer is total up to 19 layers, and the ground floor near substrate is SiO
2low-index film, the second layer is TiO
2high refractive index layer, replaces successively, and thickness is followed successively by 173.3nm, 105.4nm, 188.1nm, 114.5nm, 190.6nm, 115.5nm, 190.8nm, 115.5nm, 189.8nm, 113.9nm, 186.0nm, 106.7nm, 167.6nm, 98.3nm, 177.9nm, 109.5nm, 180.8nm, 108.4nm, 90.1nm.Every infrared-ultraviolet filtering film except will ensureing the infrared light of height transmittance and reflectance cut-off 900 ~ 1200nm wavelength zone, visible region, also to end the ultraviolet light that CCD image sensor, imageing sensor CMOS are harmful to.Blue plastic substrate two on the surface design thickness almost equal every infrared filtering film with every infrared-ultraviolet filtering film, the stress on blue plastic substrate two surface can be balanced, and, the light of elimination different wave length can be distinguished, improve picture quality.
Compared with prior art, the invention has the beneficial effects as follows:
1). prior art adopt smalt optical filter due to the gross thickness of smalt substrate and blooming be about 0.5mm, although the substrate deformation caused by membrane stress is less, but the aberration of can not ignore can be introduced owing to inserting one piece of thicker flat board, reduce picture quality; And the gross thickness of blue plastic substrate and blooming is about 0.05mm ~ 0.2mm in optical filter of the present invention, in preferred version, the gross thickness of blue plastic substrate and blooming is about 0.08mm ~ 0.12mm, imaging aberration is not almost affected, and the blue plastic substrate distortion that membrane stress causes can control equally, aberration is not also almost affected.
2). very easily broken when prior art cuts into small pieces after adopting the optical filter plated film of smalt, this due to smalt substrate enbrittle, expansion coefficient is high, stress is large etc., and characteristic determined, and in order to the difficulty of clamping of enhancing productivity, reduce must adopt large substrate (conventional 60mm × 60mm) to load plated film during plated film, cutting into small pieces after plated film is indispensable operations, so just inevitably causes the fabrication yield of the optical filter adopting smalt to reduce; And optical filter of the present invention itself is very thin, add the flexibility of blueing plastic substrate, make cutting action both simple and convenient, turn improve yield rate.
3). prior art adopts the optical filter not only price of smalt, and Heavy Weight, volume are large, are mainly used on the larger slr camera of image chip area or micro-one camera; And optical filter cost of the present invention is low, lightweight, volume is little, the less card type camera of image chip area, mobile phone camera and purpose monitoring system etc. can be widely used in, the smart mobile phone particularly increased fast at present.
4) though. the advantage that prior art adopts the optical filter of smalt to have adhesion high, but optical filter of the present invention is by measures such as the blue plastic substrate two film system that design thickness is almost equal on the surface, very thin transition bed and ion are auxiliary, can reach and adopt adhesion effect and serviceable life that the optical filter of smalt is equal to.
Accompanying drawing explanation
Fig. 1 is the structural representation of the optical filter adopting smalt in prior art;
Fig. 2 is the structural representation of optical filter of the present invention;
Fig. 3 is the transmission spectrum curve of smalt substrate in the optical filter of employing smalt of the prior art;
Fig. 4 is the transmission spectrum curve of blue plastic substrate in optical filter of the present invention;
Fig. 5 is the transmission spectrum curve every infrared filtering film in optical filter of the present invention;
Fig. 6 is the transmission spectrum curve every infrared-ultraviolet filtering film in optical filter of the present invention;
Fig. 7 is the transmission spectrum curve of the optical filter adopting smalt in prior art;
Fig. 8 is the transmission spectrum curve of optical filter of the present invention.
Embodiment
Figure 1 shows that in prior art the structural representation of the optical filter adopting smalt, comprise smalt substrate 7, be arranged on the antireflecting film 8 of smalt substrate 7 side and be arranged on the existing every infrared-ultraviolet filtering film 9 of smalt substrate 7 opposite side, the thickness of smalt substrate 7 needs about 0.5mm just can obtain inadequate satisfactory transmission-cut-off zone of transition steepness, although this causes the problem that aberration increases, but benefit is the smalt substrate 7 making membrane stress cause is out of shape reduction, two surfaces of smalt substrate 7 usually plate respectively antireflecting film 8 and existing every infrared-ultraviolet filtering film 9, antireflecting film 8 is 3 tunics usually needing 3 kinds of materials to form, existing every infrared-ultraviolet filtering film 9 be by the SiO of different-thickness
2low-index film 5 and TiO
2the film of 40 multilayers that high refractive index layer 6 replaces is formed, when detecting transmission spectrum curve, actual selection 43 layer films to form every infrared-ultraviolet filtering film.In addition, due to smalt substrate 7 and SiO
2low-index film 5 and TiO
2high refractive index layer 6 is inorganic material, thus adheres to excellent between smalt substrate 7 and rete, does not need transition bed.
As shown in Figure 2, be optical filter of the present invention, comprise blue plastic substrate 1, be arranged on the HfO of blue plastic substrate 1 both sides
2transition bed 2 and and HfO
2transition bed 2 immediately every infrared filtering film 3 with every infrared-ultraviolet filtering film 4, every infrared filtering film 3 and the both sides laying respectively at blue plastic substrate 1 every infrared-ultraviolet filtering film 4.The product that blue plastic substrate 1 adopts the Japanese JSR that thickness is 0.1mm, model is FLXL100AA to produce.HfO
2transition bed 2 surface energy is very high, to improve blue plastic substrate 1 to greatest extent and every infrared filtering film 3 and the adhesion between infrared-ultraviolet filtering film 4, but due to HfO
2the refractive index of transition bed 2 only has 2.02, is the SiO of 1.45 more than refractive index
2low-index film 5 is high, and specific refractivity is the TiO of 2.42
2high refractive index layer 6 is low, in order to reduce HfO
2transition bed 2 on the impact of filter optical characteristic, HfO
2the preferred thickness of transition bed 2 is 10nm, is coated with HfO on two surfaces of blue plastic substrate 1
2transition bed is front and be coated with HfO
2bundle pressure is all adopted to carry out auxiliary bombardment for the ion beam that 700V and line are 70mA in transition bed process.Every infrared filtering film 3 by TiO
2high refractive index layer 6 and SiO
2low-index film 5 is alternately formed, the TiO in infrared filtering film 3
2high refractive index layer 6 and SiO
2low-index film 5 is total up to 24 layers, and the ground floor near blue plastic substrate 1 is TiO
2high refractive index layer 6, the second layer is SiO
2low-index film 5, replaces successively, and the geometric thickness of each tunic is as shown in table 1 successively, and in table 1, rete sequence number is 1, is ground floor, by that analogy.Every infrared-ultraviolet filtering film 4 by SiO
2low-index film 5 and TiO
2high refractive index layer 6 is alternately formed.SiO in infrared-ultraviolet filtering film 4
2low-index film 5 and TiO
2high refractive index layer 6 is total up to 19 layers, and the ground floor near blue plastic substrate 1 is SiO
2low-index film 5, the second layer is TiO
2high refractive index layer 6, replaces successively, and the geometric thickness of each tunic is as shown in table 2 successively, and in table 2, rete sequence number is 1, is ground floor, by that analogy.
Table 1
| Rete sequence number | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | |
| Material | Plastics | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 |
| Refractive index | 1.5 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 |
| Thickness (nm) | 94.4 | 154.0 | 81.6 | 145.0 | 78.7 | 142.3 | 77.7 | 141.3 | 77.3 | 140.9 | 77.1 |
Continued 1
| 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 | 24 | |
| SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | Air |
| 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 1.0 |
| 140.6 | 77.1 | 140.7 | 77.4 | 140.8 | 77.7 | 141.4 | 78.7 | 143.1 | 81.2 | 148.2 | 83.4 | 153.6 |
Table 2
| Rete sequence number | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | |
| Material | Plastics | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 |
| Refractive index | 1.5 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 |
| Thickness (nm) | 173.3 | 105.4 | 188.1 | 114.5 | 190.6 | 115.5 | 190.8 | 115.5 | 189.8 | 113.9 |
Continued 2
| 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | |
| SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | TiO 2 | SiO 2 | Air |
| 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 2.42 | 1.46 | 1.0 |
| 186.0 | 106.7 | 167.6 | 98.3 | 177.9 | 109.5 | 180.8 | 108.4 | 90.1 |
Due to TiO each in Fig. 1 and Fig. 2
2the material function of high refractive index layer is all identical, belongs to same technical characteristic, all represents with label 6, but its concrete thickness is different, each TiO
2the thickness of high refractive index layer 6 is with being as the criterion of describing in embodiment.Equally, due to SiO each in Fig. 1 and Fig. 2
2the material function of low-index film is all identical, belongs to same technical characteristic, all represents with label 5, but its concrete thickness is different, each SiO
2the thickness of low-index film 5 is with being as the criterion of describing in embodiment.SiO
2low-index film 5 and TiO
2adopt ion to assist time prepared by high refractive index layer 6, the bundle pressure that ion is assisted is 700V, and line is 70mA, to reduce stress and to improve adhesion.TiO
2the preparation of high refractive index layer 6 adopts Ti
3o
5evaporating materials, and 1.5 × 10
-2evaporate with the speed of 0.5nm/s in Pa oxygen atmosphere, and adopt ion to assist, the bundle pressure that ion is assisted is 700V, and line is 70mA.SiO
2the preparation of low-index film 5 adopts SiO
2evaporating materials, 1.5 × 10
-2evaporate with the speed of 2nm/s in Pa oxygen atmosphere, and adopt ion to assist, the bundle pressure that ion is assisted is 700V, and line is 70mA.TiO is prepared by this technique
2high refractive index layer 6 and SiO
2low-index film 5, can reduce every infrared filtering film 3 and the stress every infrared-ultraviolet filtering film 4, to improve adhesion and stability, reduce curve of spectrum drift, but in order to unlikely increase ion assists the compressive stress caused, adopt lower ion auxiliary bundle pressure and line.
As shown in Figure 3, for adopt smalt in prior art optical filter in the transmission spectrum curve of smalt substrate 7; As shown in Figure 4, be the transmission spectrum curve of plastic substrate 1 blue in optical filter of the present invention.Compared by transmission spectrum curve, as shown in Figure 4, although the thickness of blue plastic substrate 1 (FLXL100AA) only has 0.1mm, but its transmission-cut-off zone of transition has enough steepness, compared to the smalt substrate 7 of the thickness 0.5mm shown in Fig. 3, the steepness of the curve of spectrum improves many.
As shown in Figure 5, for in optical filter of the present invention every the transmission spectrum curve of infrared filtering film 3, adopt thickness listed by table 1 every infrared filtering film 3, total number of plies is 24 layers, film system gross thickness is about 2690nm, while guarantee visible region height transmission, by the infrared light of reflective stopping 700nm ~ 900nm wavelength zone, the shortwave in reflective stopping district connects with blue plastic substrate 1 transmission near 650nm-cut-off zone of transition just, the long wave in reflective stopping district just with connecting every infrared-ultraviolet filtering film 4 shown in Fig. 6.As shown in Figure 6, in optical filter of the present invention every the transmission spectrum curve of infrared-ultraviolet filtering film 4, adopt thickness listed by table 2 every infrared-ultraviolet filtering film 4, total number of plies is 19 layers, and film system gross thickness is about 2720nm.Every infrared-ultraviolet filtering film 4 except will ensureing the infrared light of height transmittance and reflectance cut-off 900 ~ 1200nm wavelength zone, visible region, also to end the ultraviolet light that CCD image sensor, imageing sensor CMOS are harmful to.Blue plastic substrate 1 liang on the surface design thickness almost equal every infrared filtering film 3 with every infrared-ultraviolet filtering film 4, the stress on blue plastic substrate 1 liang of surface can be balanced, and, the light of elimination different-waveband can be distinguished, improve picture quality.
As shown in Figure 7, for adopting the transmission spectrum curve of the optical filter of smalt in prior art, particularly at wavelength 600nm, because the transmissivity of smalt substrate 7 itself sharply declines, the transmissivity of the optical filter of employing smalt is made to only have 80%, lower than the present invention optical filter by 5.9%; Simultaneously, because antireflecting film 8 (3 layers) has been plated and respectively every infrared-ultraviolet film 9 (43 layers) in smalt substrate 7 both sides, therefore, even if the smalt substrate 7 of thickness 0.5mm, in fact in the smalt substrate 7 deformation ratio optical filter of the present invention that causes of stress in thin film, the blue plastic substrate 1 of 0.1mm is also large.As shown in Figure 8, for the transmission spectrum curve of optical filter of the present invention, owing to there is excellent antireflection characteristic every infrared filtering film 3 with every infrared-ultraviolet filtering film 4 simultaneously, therefore, optical filter of the present invention in the transmissivity of visible region passband higher than blue plastic substrate 1.Measurement result shows: at wavelength 461 ~ 570nm, average transmittance T
ave=95.7%; At wavelength 600nm, transmissivity (T)=85.9%; At ultraviolet cut-on district 350 ~ 375nm, average transmittance T
ave=0.33%; At IR-cut district 700 ~ 1100nm, average transmittance T
ave=0.1%.This optical property is equal in Fig. 7 the optical filter adopting smalt substantially.
Blue plastic substrate 1 distortion of optical filter of the present invention meets split requirement and request for utilization.Due to HfO
2transition bed 2, SiO
2low-index film 5 and TiO
2high refractive index layer 6 is all coated with ion assisted vacuum, thus adhesive force, firmness all can meet to boil in water and cut after adhesive tape test.After optical filter of the present invention is boiled 1 hour in water, scratched by face at interval of 1mm, draw 5 times with test tape paper, rete is not pulled; By the cleaning wiping cloth of dipping in alcohol, rub back and forth 50 times with the power of 200g, surface occurs without scratching, and meets request for utilization.And when temperature variation 50 DEG C, in transmission-cut-off zone of transition, the wave length shift of transmissivity T=50% is less than 1nm, and characteristic is highly stable.
Claims (5)
1. an optical filter, comprise substrate and be arranged on the blooming of described substrate both sides, it is characterized in that, described substrate is blue plastic substrate, and the thickness of described blue plastic substrate is 0.05mm ~ 0.2mm, is provided with HfO between described substrate and blooming
2transition bed, described HfO
2the thickness of transition bed is 8nm ~ 20nm;
Described blooming be arranged on substrate side every infrared filtering film and be arranged on substrate opposite side every infrared-ultraviolet filtering film, described every infrared filtering film by TiO
2high refractive index layer and SiO
2low-index film is alternately formed, described every infrared-ultraviolet filtering film by SiO
2low-index film and TiO
2high refractive index layer is alternately formed;
Described TiO in infrared filtering film
2high refractive index layer and SiO
2low-index film is total up to 20 ~ 28 layers, described TiO in infrared filtering film
2high refractive index film layer thickness is 75nm ~ 95nm, described SiO in infrared filtering film
2low refractive index film layer thickness is 140nm ~ 155nm;
Described SiO in infrared-ultraviolet filtering film
2low-index film and TiO
2high refractive index layer is total up to 17 ~ 21 layers, described SiO in infrared-ultraviolet filtering film
2low refractive index film layer thickness is 90nm ~ 191nm, described TiO in infrared-ultraviolet filtering film
2high refractive index film layer thickness is 98nm ~ 116nm.
2. optical filter according to claim 1, is characterized in that, described HfO
2transition bed is before being coated with and be coated with in process and all adopt bundle pressure to carry out auxiliary bombardment for the ion beam that 600V ~ 800V and line are 60mA ~ 80mA.
3. optical filter according to claim 1, is characterized in that, described TiO
2high refractive index layer and SiO
2the preparation of low-index film all adopts ion to assist, the condition that ion is auxiliary: bundle pressure is 600V ~ 800V, and line is 60mA ~ 80mA.
4. the optical filter according to claim 1 or 3, is characterized in that, described TiO
2the preparation of high refractive index layer adopts Ti
3o
5evaporating materials, and 1 × 10
-2pa ~ 3 × 10
-2evaporate with the speed of 0.2nm/s ~ 0.8nm/s in Pa oxygen atmosphere;
Described SiO
2the preparation of low-index film adopts SiO
2evaporating materials, and 1 × 10
-2pa ~ 3 × 10
-2evaporate with the speed of 0.8nm/s ~ 3.2nm/s in Pa oxygen atmosphere.
5. optical filter according to claim 1, is characterized in that, described TiO in infrared filtering film
2high refractive index layer and SiO
2low-index film is total up to 24 layers, and the ground floor near substrate is TiO
2high refractive index layer, the second layer is SiO
2low-index film, replaces successively, and thickness is followed successively by 94.4nm, 154nm, 81.6nm, 145nm, 78.7nm, 142.3nm, 77.7nm, 141.3nm, 77.3nm, 140.9nm, 77.1nm, 140.6nm, 77.1nm, 140.7nm, 77.4nm, 140.8nm, 77.7nm, 141.4nm, 78.7nm, 143.1nm, 81.2nm, 148.2nm, 83.4nm, 153.6nm;
Described SiO in infrared-ultraviolet filtering film
2low-index film and TiO
2high refractive index layer is total up to 19 layers, and the ground floor near substrate is SiO
2low-index film, the second layer is TiO
2high refractive index layer, replaces successively, and thickness is followed successively by 173.3nm, 105.4nm, 188.1nm, 114.5nm, 190.6nm, 115.5nm, 190.8nm, 115.5nm, 189.8nm, 113.9nm, 186.0nm, 106.7nm, 167.6nm, 98.3nm, 177.9nm, 109.5nm, 180.8nm, 108.4nm, 90.1nm.
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|---|---|---|---|
| CN201210269188.0A CN102759768B (en) | 2012-07-31 | 2012-07-31 | Optical filter |
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|---|---|---|---|
| CN201210269188.0A CN102759768B (en) | 2012-07-31 | 2012-07-31 | Optical filter |
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| CN102759768A CN102759768A (en) | 2012-10-31 |
| CN102759768B true CN102759768B (en) | 2014-12-31 |
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| CN103513314B (en) * | 2013-10-10 | 2016-03-23 | 杭州科汀光学技术有限公司 | A kind of low-pass filter |
| CN103592712A (en) * | 2013-11-28 | 2014-02-19 | 上海空间电源研究所 | High-performance all-dielectric interference multilayer film-TCO series type light filter and manufacturing method thereof |
| CN105738995A (en) * | 2016-04-27 | 2016-07-06 | 深圳力合光电传感股份有限公司 | Cutoff filter |
| CN105911625A (en) * | 2016-05-09 | 2016-08-31 | 浙江水晶光电科技股份有限公司 | Mixing absorption type infrared cut-off filter and preparation method thereof |
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| CN108873136A (en) * | 2018-08-07 | 2018-11-23 | 湖北五方光电股份有限公司 | Ultra-thin plastic rubber substrate type cutoff filter and its technology of preparing |
| TWI705269B (en) * | 2019-03-27 | 2020-09-21 | 群光電子股份有限公司 | Image captured device, optical filter film, and method for manufacturing optical thin film |
| CN110161714B (en) * | 2019-05-16 | 2021-07-27 | 深圳大学 | System and method for demodulating light beam |
| CN111812762B (en) * | 2020-07-16 | 2022-02-22 | 杭州美迪凯光电科技股份有限公司 | Infrared cut-off filter for improving glare ghost phenomenon and preparation method thereof |
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