CN103364859A - Infrared cutoff filter structure - Google Patents
Infrared cutoff filter structure Download PDFInfo
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- CN103364859A CN103364859A CN2012100975727A CN201210097572A CN103364859A CN 103364859 A CN103364859 A CN 103364859A CN 2012100975727 A CN2012100975727 A CN 2012100975727A CN 201210097572 A CN201210097572 A CN 201210097572A CN 103364859 A CN103364859 A CN 103364859A
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Abstract
The invention relates to an infrared cutoff filter structure which comprises a substrate, two binding films and two infrared cutoff filtering films. The substrate is made of a material with blue glass characteristic; the two binding films are made of silicon oxide materials and are respectively plated on two surfaces of the substrate; each of two infrared cutoff filtering films is formed by stacking a high refractive film layer with a first refractive index and a low refractive film layer with a second refractive index, wherein the first refractive index is greater than the second refractive index; and the two infrared cutoff filtering films are respectively coated on the binding films, so that the binding films are respectively placed between the infrared cutoff filtering films and the substrate.
Description
Technical field
The present invention is relevant with optical filter, in more detail refers to a kind of infrared intercepting filter structure.
Background technology
Along with science and technology is constantly progressive, on the market as digital camera or have mobile phone, electronic game Game device, the PDA of camera function ... Deng image capture unit universalness day by day, it can with clapping the facilitating functions of namely seeing, become masses are used for recording things in daily life or work portable tool.
Above-mentioned image capture unit then is to see through image light by behind the camera lens, by Charged Coupled Device (Charge-coupled Device, CCD) or the image sensor such as CMOS (Complementary Metal Oxide Semiconductor) (Complementary Metal-Oxide-Semiconductor, CMOS) receives and converts image light signal to the image electric signal.Yet; aforesaid image sensor is when converting image light signal to the image electric signal; usually the human body naked eyes can't be able to be looked infra-red signal convert in the lump the image electric signal to; when converting image display to after the image processing chip receives the image electric signal, the image that shows then easily is subject to infrared ray and distortion or the generation of the situation of dispersion is arranged.
Therefore, occur for avoiding said circumstances, usually can set up an infrared intercepting filter before image sensor, use the infrared ray filtering in the light, and then so that the image energy that shows is truer.See also Fig. 1, known infrared intercepting filter 2 is established one deck infrared ray cut (Infrared Cut in the upper plating of wherein one side of glass substrate 40, IR-Cut) filter coating 50, another side then plates establishes the anti-reflective (Anti-Reflective of one deck, AR) film 60, and can reach the ultrared purpose of filtering.Yet the design of aforementioned infrared intercepting filter 2 when 0 to 30 spends, can produce the excessive problem of half wave number side-play amount in the incident angle of light usually, and so that easily there are fuzzy or the situation of distortion in the image corner that shows.Therefore, for improving the problems referred to above, see also Fig. 2, then there is the dealer to research and develop another kind of infrared intercepting filter 3, its structural design is on the two sides of the substrate 70 with smalt characteristic, plating is provided with one deck infrared ray cut filter coating 80 respectively, uses through the characteristic of smalt and improves the excessive situation of half wave number side-play amount that known infrared line cutoff filter 2 produces when 0 to 30 spends in the incident angle of light.But in the structure of the infrared intercepting filter 3 after improving; the infrared ray cut filter coating 80 that plating is located on the substrate usually can be because the smalt characteristic of this substrate 70; and so that 80 platings of infrared ray cut filter coating can't reach with the surface stress of this substrate 70 fully coupling when establishing; and so that after this infrared intercepting filter 3 completes; easily form the phenomenon that exterior membrane splits, and so that the making yield of this infrared intercepting filter 3 is on the low side.Therefore, as shown in the above description, the structural design of known infrared line cutoff filter 2,3 is not attained perfect yet, and the part that still haves much room for improvement.
Summary of the invention
The technical problem to be solved in the present invention is, the defective that produces for the infrared half wave number side-play amount situation excessive or that easily have exterior membrane to split that produces when 0 to 30 spends in the incident angle of light by optical filter in the prior art, a kind of infrared intercepting filter structure is provided, the excessive situation of the half wave number side-play amount that when 0 to 30 spends, produces except the incident angle that can improve light, also do not have the situation that exterior membrane splits and produce.
The present invention is that the technical scheme that its technical matters of solution adopts is, a kind of infrared intercepting filter structure is provided, include a substrate, two junction films and two infrared ray cut filter coatings, wherein, this substrate is made with the material with smalt characteristic; These two junction films plate respectively on two faces being located at this substrate; These two infrared ray cut filter coatings form with the high refraction film layer with first refractive rate and the mutual storehouse of low refraction rete with second refractive index respectively, and this first refractive rate is greater than this second refractive index; These two infrared ray cut filter coatings plate respectively to be located at respectively on this junction film, and makes respectively this junction film respectively between this infrared ray cut filter coating and this substrate.
According to above-mentioned design, respectively this junction film is made with silica material.
According to above-mentioned design, respectively the physics thickness of this junction film is less than 0.5 rice (nm) how, and wherein how rice (nm) is as good take 0.1～0.2.
According to above-mentioned design, this substrate is made with plastic material.
According to above-mentioned design, process on the two sides of this substrate all surface finish.
According to above-mentioned design, the thickness of this substrate is less than 0.5 millimeter (mm), and wherein take 0.1～0.3 millimeter (mm) as good.
According to above-mentioned design, described the second refractive index is 1.38～1.44.
According to above-mentioned design, described first refractive rate is 2.0～5.0, and wherein take 2.1～2.7 as good.
By this, see through above-mentioned design, just can improve outside the excessive situation of half wave number side-play amount that the incident angle of light produces when 0 to 30 spends, and also not have the situation generation that exterior membrane splits.
Description of drawings
Fig. 1 is the structural drawing of known infrared line cutoff filter.
Fig. 2 is the structural drawing of another known infrared line cutoff filter.
Fig. 3 is the structural drawing of infrared intercepting filter of the present invention.
Embodiment
For being illustrated more clearly in the present invention, hereby lifting preferred embodiment and cooperate accompanying drawing to be described in detail as follows.
See also Fig. 3, the structure of the infrared intercepting filter 1 of preferred embodiment of the present invention includes a substrate 10, two junction films 20 and two infrared ray cut filter coatings 30.Wherein:
This substrate 10 is made to have the plastic material that promotes the blue light penetrance and reduce the smalt characteristic of red light penetrance, and all process through surface finish on its two sides.In addition, the thickness of this substrate is less than 0.5 millimeter (mm), and wherein better thickness then is 0.1～0.3 millimeter, and in the present embodiment, take 0.2 millimeter as example, but not as limit, also can use on demand other thickness instead.
These two junction films 20 are made with silica material in the present embodiment, and plating is located on two faces of this substrate 10 respectively.In addition, respectively the thickness of this junction film 20 is less than 0.5 rice (nm) how, and wherein preferred thickness is 0.1～0.2 rice how, and in the present embodiment, and how rice is as example take 1.5, but not as limit, also can use on demand other thickness instead.
This two infrared ray cuts (Infrared Cut, IR-Cut) filter coating 30 forms with the high refraction film layer with first refractive rate and the mutual storehouse of low refraction rete with second refractive index respectively, and this first refractive rate is greater than this second refractive index.Wherein, this first refractive rate is 2.0～5.0, and in the present embodiment, this high refraction film layer is made by the tantalum oxide material, and so that this first refractive rate is 2.1～2.7, but make material not as limit, also can be titania or other high-index material that is fit to is made.This second refractive index is 1.36～1.47, and in the present embodiment, this low refraction rete is made by the monox material, and so that this second refractive index is 1.38～1.44, but make material equally not as limit, also can be the high-index material that silicon dioxide or other be fit to and make.By this, just can see through the mode that interleaving stack just reflects rete and reach the ultrared purpose of filtering.In addition, these two infrared ray cut filter coatings 30 plate respectively to be located at respectively on this junction film 20, and makes respectively this junction film 20 respectively between this infrared ray cut filter coating 30 and this substrate 10.
By this, see through above-mentioned design, except seeing through these two infrared ray cut filter coatings, 30 filtering infrared rays, and outside the excessive situation of this substrate 10 that utilizes the smalt characteristic half wave number side-play amount of avoiding the incident angle when light when 0 to 30 spends, to produce, see through respectively these junction film 20 platings and be located at the respectively design between this infrared ray cut filter coating 30 and this substrate 10, more can so that infrared intercepting filter of the present invention 1 in manufacturing process, the stress that produces in these substrate 10 two sides when establishing is plated in energy utilization respectively these junction film 20 average respectively these infrared ray cut filter coatings 30, and so that the infrared intercepting filter 1 that completes does not have the situation generation that exterior membrane splits.
The above only is the better possible embodiments of the present invention, such as uses equivalent structure and method for making variation that instructions of the present invention and claim are done, ought to be included in the claim of the present invention.
Claims (11)
1. an infrared intercepting filter structure is characterized in that, comprises:
Substrate is made with the material with smalt characteristic;
Two junction films, plating is located on two faces of this substrate respectively; And
Two infrared ray cut filter coatings form with the high refraction film layer with first refractive rate and the mutual storehouse of low refraction rete with second refractive index respectively, and this first refractive rate are greater than this second refractive index, in order to the filtering infrared ray; These two infrared ray cut filter coatings plate respectively to be located at respectively on this junction film, and makes respectively this junction film respectively between this infrared ray cut filter coating and this substrate.
2. infrared intercepting filter structure as claimed in claim 1 is characterized in that, respectively this junction film is made with silica material.
3. infrared intercepting filter structure as claimed in claim 1 is characterized in that, respectively the physics thickness of this junction film is less than 0.5 rice how.
4. infrared intercepting filter structure as claimed in claim 3 is characterized in that, respectively the physics thickness of this junction film is 0.1 ~ 0.2 rice how.
5. infrared intercepting filter structure as claimed in claim 1 is characterized in that, this substrate is made with plastic material.
6. infrared intercepting filter structure as claimed in claim 1 is characterized in that, the thickness of this substrate is less than 0.5 millimeter.
7. infrared intercepting filter structure as claimed in claim 6 is characterized in that, the thickness of this substrate is 0.1 ~ 0.3 millimeter.
8. infrared intercepting filter structure as claimed in claim 1 is characterized in that, process on the two sides of this substrate all surface finish.
9. infrared intercepting filter structure as claimed in claim 1 is characterized in that, described the second refractive index is 1.36 ~ 1.47.
10. infrared intercepting filter structure as claimed in claim 1 is characterized in that, described first refractive rate is 2.0 ~ 5.0.
11. infrared intercepting filter structure as claimed in claim 10 is characterized in that, described first refractive rate is 2.1 ~ 2.7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210097572.7A CN103364859B (en) | 2012-04-05 | 2012-04-05 | Infrared intercepting filter structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210097572.7A CN103364859B (en) | 2012-04-05 | 2012-04-05 | Infrared intercepting filter structure |
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| CN103364859A true CN103364859A (en) | 2013-10-23 |
| CN103364859B CN103364859B (en) | 2016-01-20 |
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| CN201210097572.7A Expired - Fee Related CN103364859B (en) | 2012-04-05 | 2012-04-05 | Infrared intercepting filter structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103605175A (en) * | 2013-11-28 | 2014-02-26 | 温岭市现代晶体有限公司 | Light filter |
| CN105549141A (en) * | 2016-01-22 | 2016-05-04 | 宁波永新光学股份有限公司 | Fluorescent optical filter assembly for medical examination system |
| CN106908888A (en) * | 2017-03-06 | 2017-06-30 | 浙江水晶光电科技股份有限公司 | A kind of low angle offset characteristic bandpass filter |
| CN107884858A (en) * | 2017-12-28 | 2018-04-06 | 南京理工大学 | Cutoff filter for Spectral beam combining |
| CN108873136A (en) * | 2018-08-07 | 2018-11-23 | 湖北五方光电股份有限公司 | Ultra-thin plastic rubber substrate type cutoff filter and its technology of preparing |
| CN110572555A (en) * | 2019-09-30 | 2019-12-13 | 维沃移动通信有限公司 | Optical module and electronic equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090252862A1 (en) * | 2006-08-25 | 2009-10-08 | Nalux Co., Ltd. | Method for producing optical element having multi-layered film |
| CN101726815A (en) * | 2008-10-22 | 2010-06-09 | 精工爱普生株式会社 | Optical element and optical element manufacturing method |
| CN1979230B (en) * | 2005-12-07 | 2010-12-15 | 株式会社村上开明堂 | Dielectric multilayer filter |
-
2012
- 2012-04-05 CN CN201210097572.7A patent/CN103364859B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1979230B (en) * | 2005-12-07 | 2010-12-15 | 株式会社村上开明堂 | Dielectric multilayer filter |
| US20090252862A1 (en) * | 2006-08-25 | 2009-10-08 | Nalux Co., Ltd. | Method for producing optical element having multi-layered film |
| CN101726815A (en) * | 2008-10-22 | 2010-06-09 | 精工爱普生株式会社 | Optical element and optical element manufacturing method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103605175A (en) * | 2013-11-28 | 2014-02-26 | 温岭市现代晶体有限公司 | Light filter |
| CN103605175B (en) * | 2013-11-28 | 2016-01-13 | 温岭市现代晶体有限公司 | A kind of optical filter |
| CN105549141A (en) * | 2016-01-22 | 2016-05-04 | 宁波永新光学股份有限公司 | Fluorescent optical filter assembly for medical examination system |
| CN106908888A (en) * | 2017-03-06 | 2017-06-30 | 浙江水晶光电科技股份有限公司 | A kind of low angle offset characteristic bandpass filter |
| CN107884858A (en) * | 2017-12-28 | 2018-04-06 | 南京理工大学 | Cutoff filter for Spectral beam combining |
| CN108873136A (en) * | 2018-08-07 | 2018-11-23 | 湖北五方光电股份有限公司 | Ultra-thin plastic rubber substrate type cutoff filter and its technology of preparing |
| CN110572555A (en) * | 2019-09-30 | 2019-12-13 | 维沃移动通信有限公司 | Optical module and electronic equipment |
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|---|---|
| CN103364859B (en) | 2016-01-20 |
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Granted publication date: 20160120 Termination date: 20170405 |