CN103364859B - Infrared intercepting filter structure - Google Patents
Infrared intercepting filter structure Download PDFInfo
- Publication number
- CN103364859B CN103364859B CN201210097572.7A CN201210097572A CN103364859B CN 103364859 B CN103364859 B CN 103364859B CN 201210097572 A CN201210097572 A CN 201210097572A CN 103364859 B CN103364859 B CN 103364859B
- Authority
- CN
- China
- Prior art keywords
- substrate
- infrared
- filter structure
- intercepting filter
- infrared ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The present invention relates to a kind of infrared intercepting filter structure, include a substrate, two junction films and two infrared ray cut filter coatings, wherein, this substrate is made with the material with smalt characteristic; These two junction films are made with silica material, and plating is located on two faces of this substrate respectively; These two infrared ray cut filter coatings are respectively to have the high refraction film layer of first refractive rate and to have the mutual storehouse formation of low refracting film layer of the second refractive index, and this first refractive rate is greater than this second refractive index; These two infrared ray cut filter coatings plate respectively to be located at respectively on this junction film, and make respectively this junction film respectively between this infrared ray cut filter coating and this substrate.
Description
Technical field
The present invention is relevant with optical filter, in more detail refers to a kind of infrared intercepting filter structure.
Background technology
Along with science and technology constantly progress, on the market as digital camera or mobile phone, electronic game Game device, the PDA with camera function ... Deng image capture unit day by day universalness, it with clapping the facilitating functions namely seen, can become the popular portable tool being used for recording things in daily life or work.
Above-mentioned image capture unit is then through image light by after camera lens, by Charged Coupled Device (Charge-coupledDevice, or the image sensor such as CMOS (Complementary Metal Oxide Semiconductor) (ComplementaryMetal-Oxide-Semiconductor, CMOS) receives and converts image light signal to image electric signal CCD).But; aforesaid image sensor is when converting image light signal to image electric signal; usually can by living human eye cannot depending on infra-red signal convert image electric signal in the lump to; when image processing chip receive convert image display to after image electric signal time, the image shown then easily is subject to infrared ray and has the situation of distortion or dispersion to occur.
Therefore, for avoiding said circumstances to occur, usually can set up an infrared intercepting filter before image sensor, using the infrared ray filtering in light, and then make the image energy that shows truer.Refer to Fig. 1, known infrared intercepting filter 2 establishes one deck infrared ray cut (InfraredCut in the upper plating of wherein one side of glass substrate 40, IR-Cut) filter coating 50, another side then plates establishes one deck anti-reflective light (Anti-Reflective, AR) film 60, and the ultrared object of filtering can be reached.But the design of aforementioned infrared intercepting filter 2, when the incident angle of light is spent between 0 to 30, usually can produce the problem that half wave number side-play amount is excessive, and make the image corner shown easily have the fuzzy or situation of distortion.Therefore, for improving the problems referred to above, refer to Fig. 2, then dealer is had to research and develop another kind of infrared intercepting filter 3, its structural design is on the two sides of substrate 70 with smalt characteristic, plating is provided with one deck infrared ray cut filter coating 80 respectively, uses characteristic through smalt to the excessive situation of the half wave number side-play amount improved known infrared line cutoff filter 2 and produce when the incident angle of light is spent between 0 to 30.But in the structure of the infrared intercepting filter 3 after improving; the infrared ray cut filter coating 80 that plating is located on substrate usually can because the smalt characteristic of this substrate 70; and infrared ray cut filter coating 80 is plated cannot to reach with the surface stress of this substrate 70 when establishing to mate completely; and after this infrared intercepting filter 3 is completed; the phenomenon that easy formation exterior membrane splits, and make the making yield of this infrared intercepting filter 3 on the low side.Therefore, as shown in the above description, the structural design of known infrared line cutoff filter 2,3 is not attained perfect yet, and the part that still haves much room for improvement.
Summary of the invention
The technical problem to be solved in the present invention is, for the defect that the half wave number side-play amount situation that is excessive or that easily have exterior membrane to split produced when the incident angle of light is spent between 0 to 30 by optical filter infrared in prior art produces, a kind of infrared intercepting filter structure is provided, except the situation that the half wave number side-play amount produced when 0 to 30 spends except the incident angle can improving light is excessive, also do not have the situation that exterior membrane splits and produce.
The technical scheme that the present invention adopts for its technical matters of solution is, a kind of infrared intercepting filter structure is provided, include a substrate, two junction films and two infrared ray cut filter coatings, wherein, this substrate is made with the material with smalt characteristic; These two junction films plate respectively to be located on two faces of this substrate; These two infrared ray cut filter coatings are respectively to have the high refraction film layer of first refractive rate and to have the mutual storehouse formation of low refracting film layer of the second refractive index, and this first refractive rate is greater than this second refractive index; These two infrared ray cut filter coatings plate respectively to be located at respectively on this junction film, and make respectively this junction film respectively between this infrared ray cut filter coating and this substrate.
According to above-mentioned design, respectively this junction film is made with silica material.
According to above-mentioned design, respectively the physical film thickness of this junction film is less than 0.5 how rice (nm), and wherein how rice (nm) is for good with 0.1 ~ 0.2.
According to above-mentioned design, this substrate is made with plastic material.
According to above-mentioned design, two sides all surface finish process of this substrate.
According to above-mentioned design, the thickness of this substrate is less than 0.5 millimeter (mm), and wherein with 0.1 ~ 0.3 millimeter (mm) for good.
According to above-mentioned design, the second described refractive index is 1.38 ~ 1.44.
According to above-mentioned design, described first refractive rate is 2.0 ~ 5.0, and is wherein good with 2.1 ~ 2.7.
By this, through above-mentioned design, outside the situation that the half wave number side-play amount that the incident angle just can improving light produces when 0 to 30 spends is excessive, and also do not have the situation that exterior membrane splits and produce.
Accompanying drawing explanation
Fig. 1 is the structural drawing of known infrared line cutoff filter.
Fig. 2 is the structural drawing of another known infrared line cutoff filter.
Fig. 3 is the structural drawing of infrared intercepting filter of the present invention.
Embodiment
For can the present invention be illustrated more clearly in, hereby lifts preferred embodiment and coordinate accompanying drawing to be described in detail as follows.
Refer to Fig. 3, the structure of the infrared intercepting filter 1 of present pre-ferred embodiments includes a substrate 10, two junction films 20 and two infrared ray cut filter coatings 30.Wherein:
This substrate 10 is made to have the plastic material promoting blue light penetrance and reduce the smalt characteristic of red light penetrance, and its two sides is all through surface finish process.In addition, the thickness of this substrate is less than 0.5 millimeter (mm), and wherein preferably thickness is then 0.1 ~ 0.3 millimeter, and in the present embodiment, for 0.2 millimeter, but not as limit, also can use other thickness on demand instead.
These two junction films 20 are made with silica material in the present embodiment, and plating is located on two faces of this substrate 10 respectively.In addition, respectively the thickness of this junction film 20 is less than 0.5 how rice (nm), and wherein preferred thickness is 0.1 ~ 0.2 how rice, and in the present embodiment, for 1.5 how rice, but not as limit, also can use other thickness on demand instead.
These two infrared ray cut (InfraredCut, IR-Cut) filter coating 30 is respectively to have the high refraction film layer of first refractive rate and to have the mutual storehouse formation of low refracting film layer of the second refractive index, and this first refractive rate is greater than this second refractive index.Wherein, this first refractive rate is 2.0 ~ 5.0, and in the present embodiment, this high refraction film layer is made up of tantalum oxide material, and make this first refractive rate be 2.1 ~ 2.7, but make material not as limit, also can be titania or other high-index material be applicable to is made.This second refractive index is 1.36 ~ 1.47, and in the present embodiment, this low refracting film layer is made up of monox material, and this second refractive index is made to be 1.38 ~ 1.44, but make material equally not as limit, also can be silicon dioxide or other be applicable to high-index material make.By this, just can pass through the mode of interleaving stack height refracting film layer to reach the ultrared object of filtering.In addition, these two infrared ray cut filter coatings 30 plate respectively to be located at respectively on this junction film 20, and make respectively this junction film 20 respectively between this infrared ray cut filter coating 30 and this substrate 10.
By this, through above-mentioned design, except can pass through this two infrared ray cut filter coating 30 filtering infrared rays, and outside the situation utilizing this substrate 10 of smalt characteristic to avoid half wave number side-play amount of the generation when the incident angle of light is spent between 0 to 30 excessive, the design be located at respectively between this infrared ray cut filter coating 30 and this substrate 10 is plated through by each this junction film 20, more can make infrared intercepting filter 1 of the present invention in manufacturing process, the stress produced in this substrate 10 two sides when average respectively this infrared ray cut filter coating 30 plating of respectively this junction film 20 can be utilized to establish, and situation that exterior membrane splits occurs to make the infrared intercepting filter 1 completed not have.
The foregoing is only the better possible embodiments of the present invention, such as apply equivalent structure and method for making change that instructions of the present invention and claim do, ought to be included in the scope of the claims of the present invention.
Claims (10)
1. an infrared intercepting filter structure, is characterized in that, comprises:
Substrate, makes with the material with smalt characteristic;
Two junction films, plating is located on two faces of this substrate respectively; And
Two infrared ray cut filter coatings, respectively to have the high refraction film layer of first refractive rate and to have the mutual storehouse formation of low refracting film layer of the second refractive index, and this first refractive rate is greater than this second refractive index, in order to filtering infrared ray; These two infrared ray cut filter coatings plate respectively to be located at respectively on this junction film, and make respectively this junction film respectively between this infrared ray cut filter coating and this substrate;
Wherein respectively the physical film thickness of this junction film is less than 0.5 how rice.
2. infrared intercepting filter structure as claimed in claim 1, it is characterized in that, respectively this junction film is made with silica material.
3. infrared intercepting filter structure as claimed in claim 1, is characterized in that, respectively the physical film thickness of this junction film is 0.1 ~ 0.2 how rice.
4. infrared intercepting filter structure as claimed in claim 1, it is characterized in that, this substrate is made with plastic material.
5. infrared intercepting filter structure as claimed in claim 1, it is characterized in that, the thickness of this substrate is less than 0.5 millimeter.
6. infrared intercepting filter structure as claimed in claim 5, it is characterized in that, the thickness of this substrate is 0.1 ~ 0.3 millimeter.
7. infrared intercepting filter structure as claimed in claim 1, is characterized in that, two sides all surface finish process of this substrate.
8. infrared intercepting filter structure as claimed in claim 1, it is characterized in that, the second described refractive index is 1.36 ~ 1.47.
9. infrared intercepting filter structure as claimed in claim 1, it is characterized in that, described first refractive rate is 2.0 ~ 5.0.
10. infrared intercepting filter structure as claimed in claim 9, it is characterized in that, described first refractive rate is 2.1 ~ 2.7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210097572.7A CN103364859B (en) | 2012-04-05 | 2012-04-05 | Infrared intercepting filter structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210097572.7A CN103364859B (en) | 2012-04-05 | 2012-04-05 | Infrared intercepting filter structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103364859A CN103364859A (en) | 2013-10-23 |
| CN103364859B true CN103364859B (en) | 2016-01-20 |
Family
ID=49366619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210097572.7A Expired - Fee Related CN103364859B (en) | 2012-04-05 | 2012-04-05 | Infrared intercepting filter structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103364859B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103605175B (en) * | 2013-11-28 | 2016-01-13 | 温岭市现代晶体有限公司 | A kind of optical filter |
| CN105549141A (en) * | 2016-01-22 | 2016-05-04 | 宁波永新光学股份有限公司 | Fluorescent optical filter assembly for medical examination system |
| CN106908888A (en) * | 2017-03-06 | 2017-06-30 | 浙江水晶光电科技股份有限公司 | A kind of low angle offset characteristic bandpass filter |
| CN107884858A (en) * | 2017-12-28 | 2018-04-06 | 南京理工大学 | Cutoff filter for Spectral beam combining |
| CN108873136A (en) * | 2018-08-07 | 2018-11-23 | 湖北五方光电股份有限公司 | Ultra-thin plastic rubber substrate type cutoff filter and its technology of preparing |
| CN110572555A (en) * | 2019-09-30 | 2019-12-13 | 维沃移动通信有限公司 | Optical module and electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101726815A (en) * | 2008-10-22 | 2010-06-09 | 精工爱普生株式会社 | Optical element and optical element manufacturing method |
| CN1979230B (en) * | 2005-12-07 | 2010-12-15 | 株式会社村上开明堂 | Dielectric multilayer filter |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4178190B2 (en) * | 2006-08-25 | 2008-11-12 | ナルックス株式会社 | Optical element having multilayer film and method for producing the same |
-
2012
- 2012-04-05 CN CN201210097572.7A patent/CN103364859B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1979230B (en) * | 2005-12-07 | 2010-12-15 | 株式会社村上开明堂 | Dielectric multilayer filter |
| CN101726815A (en) * | 2008-10-22 | 2010-06-09 | 精工爱普生株式会社 | Optical element and optical element manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103364859A (en) | 2013-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103364859B (en) | Infrared intercepting filter structure | |
| CN104808316B (en) | Optical image capturing lens, image capturing device and mobile terminal | |
| CN104635326B (en) | Image capturing optical lens system | |
| CN104503069B (en) | Optical Image Capturing Lens Assembly | |
| CN105093491B (en) | Image capturing optical lens, image capturing device and mobile terminal | |
| TWI431312B (en) | Optical image capturing lens assembly | |
| CN202049278U (en) | Optical lens assembly for image capture | |
| CN104297903B (en) | Image pickup lens assembly | |
| CN105022145B (en) | Image capturing optical system, image capturing device and mobile terminal | |
| CN104932084B (en) | Optical imaging lens assembly, image capturing device and mobile terminal | |
| CN202904113U (en) | Imaging lens assembly | |
| CN103969809B (en) | Optical imaging lens and apply the electronic installation of this optical imaging lens | |
| CN203759282U (en) | Annular shading element and optical image capturing lens group | |
| CN102967924B (en) | Optical lens | |
| US8077404B2 (en) | Optical unit | |
| JP2010224540A (en) | Small image capturing lens | |
| CN101738708B (en) | Image capture lens | |
| CN104849838B (en) | A kind of pixel intelligent camera optical system high and its camera lens of application | |
| TW201317656A (en) | Three-piece type optical imaging lens and electronic device applying the same | |
| US8860869B2 (en) | Lens with sapphire substrate and lens module | |
| CN204287585U (en) | A kind of high picture element wide-angle optical lens | |
| CN202916487U (en) | Visible light and infrared light confocal imaging optical lens with large image plane | |
| TWI463194B (en) | Infrared cutoff filter structure | |
| CN202939354U (en) | Image capturing lens assembly | |
| CN104280859A (en) | Imaging optical device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160120 Termination date: 20170405 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |