CN105738995A - Cutoff filter - Google Patents
Cutoff filter Download PDFInfo
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- CN105738995A CN105738995A CN201610274327.7A CN201610274327A CN105738995A CN 105738995 A CN105738995 A CN 105738995A CN 201610274327 A CN201610274327 A CN 201610274327A CN 105738995 A CN105738995 A CN 105738995A
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- film layer
- membrane stack
- thickness
- high refraction
- refracting film
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- 239000012528 membrane Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000005321 cobalt glass Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 160
- 230000003287 optical effect Effects 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004643 material aging Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 210000000582 semen Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
Abstract
The invention provides a cutoff filter which comprises a blue glass substrate, an infrared cutoff membrane stack and an ultraviolet cutoff membrane stack which are arranged at two sides of the blue glass substrate. The infrared cutoff membrane stack is formed through stacking a first high-refractivity film layer with a first refractivity and a second low-refractivity film layer with a second refractivity. The ultraviolet cutoff membrane stack is formed through stacking a third high-refractivity film layer with a third refractivity and a fourth low-refractivity film layer with a fourth refractivity, wherein the first refractivity is larger than the second refractivity; the third refractivity is larger than the fourth refractivity; and the infrared cutoff membrane stack and the ultraviolet cutoff membrane stack are deposited on the blue glass substrate in a megnetron sputtering manner. According to the cutoff filter, infrared light is cut off through the infrared cutoff membrane stack and the blue glass substrate and the ultraviolet light is cut off through the ultraviolet cutoff membrane stack; and the infrared cutoff membrane stack and the ultraviolet cutoff membrane are deposited on the blue glass substrate in a megnetron sputtering manner, thereby reducing thickness of the cutoff filter.
Description
Technical field
The invention belongs to optical filter field, particularly relate to a kind of edge filter.
Background technology
Quick growth recently as smart mobile phone and panel computer.Especially the drive of iPhone, has ignited the demand of global camera lens, drives lens of photographic mobile phone and NB module shipment significantly to grow up, and mobile phone camera function becomes necessary functions, high pixel smart mobile phone, high-end digital camera pixel gradually step up.Pixel is more high, and the Technology of camera system is just proposed higher requirement by him, and Fructus Mali pumilae starts to introduce " smalt optical filter " thus greatly improving quality of taking pictures from iPhone4/4S.Hereafter Semen setariae 2, Meizu MX2 etc. be equipped with 8,000,000 or the high-end handsets of above pixel all come into vogue the back-illuminated type photographic head of embedded smalt optical filter.Smalt optical filter is adopted to become the Main Means improving image quality at present.
Any object all can to emission infrared ray under the environment more than absolute zero (-273 DEG C), and that photographic head employing is all CCD (Charge-coupledDevice, charge coupled cell) or CMOS (ComplementaryMetalOxideSemiconductor, complementary metal oxide semiconductors (CMOS)) sensor, CCD and cmos sensor can capture all visible rays and part infrared light delicately.The light of different wave length, refractive index is inconsistent, refraction principle and law according to light can be learnt, when these light simultaneously enter camera lens, after being reflected by stationary lens, it is seen that light and infrared light will in different target surface imagings, human eye mainly experiences real image formed by visible ray, but the become virtual image of Infrared will necessarily affect the shade and quality of image, therefore, prior art is provided with the edge filter for ending infrared light.
In addition, ultraviolet light can cause aberration, spherical aberration, the color saturation that can make imaging reduces, affect image quality, and ultraviolet light can make macromolecule organic material aging, affect the ruggedness of goods and materials, shorten service life and the precision of product, this is for aobvious just more important of the satellite cut-off ultraviolet light run at space, so also must be eliminated at high leading-edge field ultraviolet light.
Edge filter in the market is primarily directed to Infrared to be ended, and the plated film mode of the infrared cut of light membrane stack of edge filter mainly adopts is vacuum vapor plating, this plated film is mainly by the raw material heating thin film to be formed, make it gasify with the form of atom or molecule to overflow, form steam and flow into the method being mapped in substrate glasses to form rete, this mode film forming is because incident molecule kinetic energy is low, the film adhesion formed is poor, rete degree of crystallinity is poor, such rete is easier to absorb visible ray, reduce the transmitance of product, the rete sum 60-80 layer needed, such thicknesses of layers is big, design and preparation difficulty are big, cost is high.Therefore, need badly provide a kind of rete relatively thin and with cut-off infrared light, ultraviolet light edge filter.
Summary of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, it is provided that a kind of edge filter, its problem aiming to solve the problem that rete is thicker and cut-off infrared light and ultraviolet light can not being had concurrently.
The present invention is achieved in that
A kind of edge filter, including smalt substrate, and it is respectively arranged on infrared cut of light membrane stack and the ultraviolet light cut-off membrane stack of smalt substrate both sides, described infrared cut of light membrane stack is with the first high refraction film layer of first refractive index and has the second mutual storehouse of low refracting film layer of the second refractive index and is formed, described ultraviolet light cut-off membrane stack is to have the three-hypers refracting film layer of third reflect rate and to have the 4th mutual storehouse formation of low refracting film layer of fourth refractive index, wherein, described first refractive index is more than described second refractive index, described third reflect rate is more than described fourth refractive index, described infrared cut of light membrane stack and described ultraviolet light cut-off membrane stack are deposited by the mode of magnetron sputtering and are attached to described smalt substrate.
Alternatively, the thickness successively alternation of each described first high refraction film layer, the thickness of each described second low refracting film layer and the gradation law of described first high refraction film layer successively alternation accordingly.
Alternatively, the thickness of each described first high refraction film layer successively alternation within the scope of 80.8nm-122.3nm, the thickness of each described second low refracting film layer within the scope of 117.2nm-177.3nm with the gradation law of described first high refraction film layer successively alternation accordingly.
Alternatively, the number of plies of described first high refraction film layer is 10-15, and the number of plies of described second low refracting film layer is corresponding with the number of plies of described first high refraction film layer.
Alternatively, the thickness successively alternation of each described three-hypers refracting film layer, the thickness of each described 4th low refracting film layer and the gradation law of described three-hypers refracting film layer successively alternation accordingly.
Alternatively, the thickness of each described three-hypers refracting film layer successively alternation within the scope of 10.6nm-41.5nm, the thickness of each described 4th low refracting film layer within the scope of 15.4nm-60.1nm with the gradation law of described three-hypers refracting film layer successively alternation accordingly.
Alternatively, the number of plies of described three-hypers refracting film layer is 10-15, and the number of plies of described 4th low refracting film layer is corresponding with the number of plies of described three-hypers refracting film layer.
Alternatively, described first high refraction film layer is any one first high refraction film layer made by Nb2O5, TiO2, PbTe, the second low refracting film layer that described second low refracting film layer is made up of SiO2, described three-hypers refracting film layer is one of them three-hypers refracting film layer made by CeO2, TiO2, the 4th low refracting film layer that described 4th low refracting film layer is made up of SiO2.
Alternatively, described infrared cut of light membrane stack and/or described ultraviolet light cut film pile up the side deviating from described basket glass and are attached with anti-reflection film.
Alternatively, described anti-reflection film includes the 5th high refraction film layer and the mutual storehouse of the 6th low refracting film layer is formed, the 5th high refraction film layer that described 5th high refraction film layer is made up of Nb2O5, the 6th low refracting film layer that described 6th low refracting film layer is made up of SiO2.
Based on the result of the present invention, first, this edge filter is by infrared cut of light membrane stack and smalt substrate cut-off infrared light, and by ultraviolet light cut-off membrane stack cut-off ultraviolet light, therefore, this edge filter can either end infrared light and also be able to cut-off ultraviolet light.Secondly, infrared cut of light membrane stack and ultraviolet light cut-off membrane stack in the embodiment of the present invention all adopt the mode of magnetron sputtering to be deposited attachment, wherein, when magnetron sputtering, high energy enters ion bom bardment target material surface, the molecule making target sputters, the molecular kinetic energy sputtered out from target is high, flim forming molecule fast deposition can be attached to attachment object to be deposited, meanwhile, when flim forming molecule deposition is attached to attachment object to be deposited, the kinetic energy of flim forming molecule can be converted into heat energy, heated attachment object to be deposited, accelerate the molecular motion in attachment object to be deposited, make can closely cooperate between flim forming molecule and attachment object to be deposited, improve adhesive force and crystallization effect, and reduce the thickness of edge filter.Also can reduce the rete absorption to light additionally, can closely cooperate between flim forming molecule and attachment object to be deposited, and make the light transmission of edge filter better.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme in the embodiment of the present invention, the accompanying drawing used required in embodiment will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the film layer structure schematic diagram of the edge filter that the embodiment of the present invention provides；
Fig. 2 is the light transmission structure schematic diagram of the edge filter that infrared light, ultraviolet light and visible ray provide in the embodiment of the present invention；
Fig. 3 is the edge filter light transmittance comparison diagram with existing edge filter of embodiment of the present invention offer.
Drawing reference numeral illustrates:
| Label | Title | Label | Title |
| 10 | Smalt substrate | ||
| 20 | Infrared cut of light membrane stack | ||
| 21 | First high refraction film layer | 22 | Second low refracting film layer |
| 30 | Ultraviolet light cut-off membrane stack | ||
| 31 | Three-hypers refracting film layer | 32 | 4th low refracting film layer |
| 40 | Anti-reflection film | ||
| 41 | 5th high refraction film layer | 42 | 6th low refracting film layer |
Detailed description of the invention
Being described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of same or like function from start to finish.The embodiment described below with reference to accompanying drawing is illustrative of, it is intended to is used for explaining the present invention, and is not considered as limiting the invention.
In describing the invention, it will be appreciated that, term " length ", " width ", " on ", D score, "front", "rear", "left", "right", " vertically ", " level ", " top ", " end " " interior ", the orientation of the instruction such as " outward " or position relationship be based on orientation shown in the drawings or position relationship, it is for only for ease of the description present invention and simplifies description, rather than instruction or hint indication device or element must have specific orientation, with specific azimuth configuration and operation, be therefore not considered as limiting the invention.
Additionally, term " first ", " second " are only for descriptive purposes, and it is not intended that indicate or imply relative importance or the implicit quantity indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or implicitly include one or more these features.In describing the invention, " multiple " are meant that two or more, unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, for instance, it is possible to it is fixing connection, it is also possible to be removably connect, or integral；Can be mechanically connected, it is also possible to be electrical connection；Can be joined directly together, it is also possible to be indirectly connected to by intermediary, it is possible to be connection or the interaction relationship of two elements of two element internals.For the ordinary skill in the art, it is possible to understand above-mentioned term concrete meaning in the present invention as the case may be.
The embodiment of the present invention provides a kind of edge filter.
As shown in Figure 1, this edge filter includes smalt substrate 10, and is respectively arranged on infrared cut of light membrane stack 20 and the ultraviolet light cut-off membrane stack 30 of smalt substrate 10 both sides, wherein, infrared cut of light membrane stack 20 is used for ending infrared light, and ultraviolet light cut-off membrane stack 30 is used for ending ultraviolet light.Smalt substrate 10 is made up of smalt, and has lifting blue light penetrance and reduce the characteristic of infrared light penetrance, that is to say that smalt substrate 10 has also functioned to the effect of barrier portion infrared light, is conducive to improving the infrared cut of light performance of edge filter.And infrared cut of light membrane stack 20 is to have the first high refraction film layer 21 of first refractive index and to have the second mutual storehouse formation of low refracting film layer 22 of the second refractive index, ultraviolet light cut-off membrane stack 30 is to have the three-hypers refracting film layer 31 of third reflect rate and to have the 4th mutual storehouse formation of low refracting film layer 32 of fourth refractive index, wherein, first refractive index is more than the second refractive index, third reflect rate deposits to smalt substrate 10 more than fourth refractive index, infrared cut of light membrane stack 20 and ultraviolet light cut-off membrane stack 30 by the mode of magnetron sputtering.
First, this edge filter ends infrared light by infrared cut of light membrane stack 20 and smalt substrate 10, and ends ultraviolet light by ultraviolet light cut-off membrane stack 30, and therefore, this edge filter can either end infrared light and also be able to cut-off ultraviolet light.Secondly, infrared cut of light membrane stack 20 and ultraviolet light cut-off membrane stack 30 in the embodiment of the present invention all adopt the mode of magnetron sputtering to be deposited attachment, wherein, when magnetron sputtering, high energy enters ion bom bardment target material surface, the molecule making target sputters, the molecular kinetic energy sputtered out from target is high, flim forming molecule fast deposition can be attached to attachment object to be deposited, meanwhile, when flim forming molecule deposition is attached to attachment object to be deposited, the kinetic energy of flim forming molecule can be converted into heat energy, heated attachment object to be deposited, accelerate the molecular motion in attachment object to be deposited, make can closely cooperate between flim forming molecule and attachment object to be deposited, improve adhesive force and crystallization effect, and reduce the thickness of edge filter.Also can reduce the rete absorption to light additionally, can closely cooperate between flim forming molecule and attachment object to be deposited, and make the light transmission of edge filter better.
It should be noted that at this, in infrared cut of light membrane stack 20, the thickness of the first high refraction film layer 21 and the second low refracting film layer 22 is at least meeting reflection one of them wavelength of infrared light, and in ultraviolet light cut-off membrane stack 30 thickness of three-hypers refracting film layer 31 and the 4th low refracting film layer 32 to be at least meeting one of them wave band of light reflection ultraviolet long.
After infrared cut of light membrane stack 20 molding, the first high refraction film layer 21 and the second low refracting film layer 22 molding therewith in infrared cut of light membrane stack 20, wherein, under normal circumstances, in infrared cut of light membrane stack 20, the thickness of all of first high refraction film layer 21 is just as, and the thickness of the second low refracting film layer 22 is also the same, so, infrared cut of light membrane stack 20 just can cutoff wavelength infrared light in specific interval.
In embodiments of the present invention, can ending the range of wavelengths of infrared light for expanding infrared cut of light membrane stack 20, the thickness successively alternation of each first high refraction film layer 21, wherein, alternation includes increasing or decreasing.The thickness of each second low refracting film layer 22 and the gradation law of the first high refraction film layer 21 successively alternation accordingly, so, difference due to thickness, every pair of first high refraction film layer 21 and the second low refracting film layer 22 just can cutoff wavelength infrared light in specific interval, and the range of wavelengths that every pair of first high refraction film layer 21 and the second low refracting film layer 22 end infrared light differs.
Specifically, in embodiments of the present invention, the thickness of each first high refraction film layer 21 successively alternation within the scope of 80.8nm-122.3nm, the thickness of each second low refracting film layer 22 within the scope of 117.2nm-177.3nm with the gradation law of the first high refraction film layer 21 successively alternation accordingly, that is to say, the thickness of the first high refraction film layer 21 is 80.8nm, and the thickness of the second corresponding low refracting film layer 22 is 117.2nm；And the thickness of the first high refraction film layer 21 is 122.3nm, the thickness of the second corresponding low refracting film layer 22 is 177.3nm；When the thickness of the first high refraction film layer 21 takes the intermediate value 101.5nm of 80.8nm-122.3nm, then the thickness of the second corresponding low refracting film layer 22 is 147.25nm.According to the optical theory division to light wave, by the wave-length coverage of light wave be 760nm-1150nm be divided into infrared light, therefore, infrared cut of light membrane stack 20 needs to be ended by the light wave that wavelength is 760nm-1150nm as far as possible.And according to interfering law, when 15 ° of angle of incidence, the thickness of each first high refraction film layer 21 and the second low refracting film layer 22 meets optical path difference δ=λ/2 of reflection light as far as possible, phase contrast is 0, so adjacent two-beam line is exactly crest when arriving same reflection interface and superposes with crest, then the reflection light of this wavelength obtains the strongest reflection, incident illumination all obtains strong reflection on each rete, after the reflection of some layers, incident illumination is just almost all reflected back, it is achieved thereby that the purpose of cut-off infrared waves.Again based on aforesaid infrared cut of light membrane stack 20, thickness is that the second low refracting film layer 22 that the first high refraction film layer 21 of 80.8nm coordinates thickness to be 117.2nm can well by the infrared light reflection of 760nm wavelength, thickness is that the second low refracting film layer 22 that the first high refraction film layer 21 of 122.3nm coordinates thickness to be 177.3nm can well by the infrared light reflection of 1150nm wavelength, thickness is that the second low refracting film layer 22 that the first high refraction film layer 21 of 101.5nm coordinates thickness to be 147.25nm then can well by the infrared light reflection of 955nm wavelength, wherein, 955nm is the intermediate value of 760nm-1150nm.
Further, in the invention process, the thickness of each first high refraction film layer 21 successively equal difference alternation within the scope of 80.8nm-122.3nm, the thickness of each second low refracting film layer 22 within the scope of 117.2nm-177.3nm with the gradation law of the first high refraction film layer 21 successively equal difference alternation accordingly, and first the number of plies of high refraction film layer 21 be 10-15, the number of plies of the second low refracting film layer 22 is corresponding with the number of plies of the first high refraction film layer 21, and the THICKNESS CONTROL of infrared cut of light membrane stack 20 is at 1.9-2.1um.The number of plies of the first high refraction film layer 21 and the second low refracting film layer 22 is 15, and based on this, for the equal difference alternation of the first high refraction film layer 21 and the second low refracting film layer 22, equal difference principle calculates, and does not launch carefully to state at this.
After ultraviolet light cut-off membrane stack 30 molding, ultraviolet light ends the three-hypers refracting film layer 31 in membrane stack 30 and the 4th low refracting film layer molding therewith, wherein, under normal circumstances, in ultraviolet light cut-off membrane stack 30, the thickness of all of three-hypers refracting film layer 31 is just as, and the thickness of the 4th low refracting film layer 32 is also the same, so, ultraviolet light cut-off membrane stack 30 just can cutoff wavelength ultraviolet light in specific interval.
In embodiments of the present invention, the range of wavelengths of ultraviolet light can be ended for expanding ultraviolet light cut-off membrane stack 30, the thickness successively alternation of each three-hypers refracting film layer 31, the thickness of each 4th low refracting film layer 32 and the gradation law of three-hypers refracting film layer 31 successively alternation accordingly, so, difference due to thickness, every pair of three-hypers refracting film layer 31 and the 4th low refracting film layer 32 just can cutoff wavelength ultraviolet light in specific interval, and the range of wavelengths that every pair of three-hypers refracting film layer 31 and the 4th low refracting film layer 32 end ultraviolet light differs.
Specifically, in embodiments of the present invention, the thickness of each three-hypers refracting film layer 31 successively alternation within the scope of 10.6nm-41.5nm, the thickness of each 4th low refracting film layer 32 within the scope of 15.4nm-60.1nm with the gradation law of three-hypers refracting film layer 31 successively alternation accordingly, that is to say, when the thickness of three-hypers refracting film layer 31 is 10.6nm, the thickness of the 4th corresponding low refracting film layer 32 is 15.4nm；And when the thickness of three-hypers refracting film layer 31 is 41.5nm, the thickness of the 4th corresponding low refracting film layer 32 is 60.1nm；When the thickness of three-hypers refracting film layer 31 takes the intermediate value 26.05nm of 10.6nm-41.5nm, then the thickness of the 4th corresponding low refracting film layer 32 is 38.75nm.According to the optical theory division to light wave, by the wave-length coverage of light wave be 100nm-390nm be divided into ultraviolet light, therefore, ultraviolet light cut-off membrane stack 30 needs to be ended by the light wave that wavelength is 100nm-390nm as far as possible.And according to interfering law, when 15 ° of angle of incidence, the thickness of each first high refraction film layer 21 and the 4th low refracting film layer 32 meets optical path difference δ=λ/4 of reflection light as far as possible, phase contrast is π, so adjacent two-beam line is exactly crest when arriving same reflection interface and superposes with trough, then the reflection light of this wavelength is the most weak, and incident illumination is after interfering cancellation through some layers, reflection light is 0, and incident illumination is just almost all transmitted away.Being entered the light of rete by law of conservation of energy: reflection+projection+absorb=1, absorption loss is determined by film-formation result, and after plated film completes, this numerical value has cured, then when being reflected into 0, then transmission light is inevitable the strongest.Membrane stack 30 is ended again based on aforesaid ultraviolet light, thickness is that the ultraviolet light of 100nm wavelength can be reflected by the 4th low refracting film layer 32 that the three-hypers refracting film layer 31 of 10.6nm coordinates thickness to be 15.4nm well, thickness is that the ultraviolet light of 390nm wavelength can be reflected by the 4th low refracting film layer 32 that the three-hypers refracting film layer 31 of 41.5nm coordinates thickness to be 60.1nm well, thickness be 26.05 three-hypers refracting film layer 31 the 4th low refracting film layer 32 that coordinates thickness to be 38.75 then can well the ultraviolet light of 955nm wavelength be reflected, wherein, 245nm is the intermediate value of 100nm-390nm.
Further, in the invention process, the thickness of each three-hypers refracting film layer 31 successively equal difference alternation within the scope of 10.6nm-41.5nm, the thickness of each 4th low refracting film layer 32 within the scope of 15.4nm-60.1nm with the gradation law of three-hypers refracting film layer 31 successively equal difference alternation accordingly, and the number of plies of three-hypers refracting film layer 31 is 10-15, the number of plies of the 4th low refracting film layer 32 is corresponding with the number of plies of the 4th high refraction film layer 32, and the THICKNESS CONTROL of ultraviolet light cut-off membrane stack 30 is at 1.9-2.1um.In embodiments of the present invention, the number of plies of three-hypers refracting film layer 31 and the 4th low refracting film layer 32 is 15, and based on this, for the equal difference alternation of three-hypers refracting film layer 31 and the 4th low refracting film layer 32, equal difference principle calculates, and does not launch carefully to state at this.
Additionally, due to interference stopping lightscreening plate has very strong dependence of angle, if pressing the design of light normal incidence, incident angle change can make the optical property of rete change therewith, and angle of incidence becomes big, and centre wavelength offsets to shortwave direction, transmitance step-down.So in above-mentioned, rete is using the angle of incidence of 15 ° as design basis, well control the centre wavelength of IR-cut membrane stack, the visible ray transition region to infrared light is not covered in the shortwave drift making infrared cut coating when bigger angle of incidence, and when so can ensure that angle of incidence more than 30 °, edge filter entirety there is no spectral drift phenomenon.As shown in Figure 2, being the light transmission structure schematic diagram of the edge filter that infrared light, ultraviolet light and visible ray provide in the embodiment of the present invention, wherein, I is the light round signal of infrared light, II is the light round signal of ultraviolet light, and III is the light round signal of visible ray.
In the embodiment of the present invention, the first high refraction film layer 21 that first high refraction film layer 21 is made up of Nb2O5, the second low refracting film layer 22 that second low refracting film layer 22 is made up of SiO2, the three-hypers refracting film layer 31 that three-hypers refracting film layer 31 is made up of CeO2, the 4th low refracting film layer 32 that the 4th low refracting film layer 32 is made up of SiO2.In other are implemented, the first high refraction film layer 21 that the first high refraction film layer 21 is made up of TiO2, PbTe one of which, the three-hypers refracting film layer 31 that three-hypers refracting film layer 31 is made up of TiO2.
In above-mentioned, infrared cut of light membrane stack 20 and ultraviolet light cut-off membrane stack 30 is adhered to respectively in the both sides of smalt substrate 10, smalt substrate 10 both sides are all subject to corresponding stress, it is to avoid this edge filter buckling deformation, it is ensured that the curvature of edge filter will not change.
In the embodiment of the present invention, as it is shown in figure 1, infrared cut of light membrane stack 20 and ultraviolet light cut-off membrane stack 30 are all attached with anti-reflection film 40 in the side deviating from basket glass.Based on this structure, this edge filter not only can end infrared light, ultraviolet light, and visible ray has anti-reflection effect, it is ensured that incident visible ray all transmits edge filter.And for utilizing the picture pick-up device of this edge filter, it is possible to increase the color saturation of the image of picture pick-up device, definition so that this edge filter can be applied with satellite investigation, unmanned plane shooting etc. the complicated field of imaging circumstances.Specifically, in embodiments of the present invention, anti-reflection film 40 includes the 5th high refraction film layer 41 and the mutual storehouse of the 6th low refracting film layer 42 is formed, wherein, the 5th high refraction film layer 41 that 5th high refraction film layer 41 is made up of Nb2O5, the 6th low refracting film layer 42 that the 6th low refracting film layer 42 is made up of SiO2.Wherein, the thickness of the 5th high refraction film layer 41 can be 82.9nm-161.6nm, and the thickness of the 6th low refracting film layer 42 can be 120.2nm-234.3nm.In the invention process, the thickness of the 5th high refraction film layer 41 is 161.6nm, and the thickness of the 6th low refracting film layer 42 is 234.3nm.
Summary, the light transmittance of the embodiment of the present invention can participate in Fig. 3.
These are only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent replacement or improvement etc. made within the spirit and principles in the present invention, should be included within protection scope of the present invention.
Claims (10)
1. an edge filter, it is characterized in that, including smalt substrate, and it is respectively arranged on infrared cut of light membrane stack and the ultraviolet light cut-off membrane stack of smalt substrate both sides, described infrared cut of light membrane stack is with the first high refraction film layer of first refractive index and has the second mutual storehouse of low refracting film layer of the second refractive index and is formed, described ultraviolet light cut-off membrane stack is to have the three-hypers refracting film layer of third reflect rate and to have the 4th mutual storehouse formation of low refracting film layer of fourth refractive index, wherein, described first refractive index is more than described second refractive index, described third reflect rate is more than described fourth refractive index, described infrared cut of light membrane stack and described ultraviolet light cut-off membrane stack are deposited by the mode of magnetron sputtering and are attached to described smalt substrate.
2. edge filter as claimed in claim 1, it is characterised in that the thickness successively alternation of each described first high refraction film layer, the thickness of each described second low refracting film layer and the gradation law of described first high refraction film layer successively alternation accordingly.
3. edge filter as claimed in claim 2, it is characterized in that, the thickness of each described first high refraction film layer successively alternation within the scope of 80.8nm-122.3nm, the thickness of each described second low refracting film layer within the scope of 117.2nm-177.3nm with the gradation law of described first high refraction film layer successively alternation accordingly.
4. the edge filter as described in claim 3 any one, it is characterised in that the number of plies of described first high refraction film layer is 10-15, the number of plies of described second low refracting film layer is corresponding with the number of plies of described first high refraction film layer.
5. edge filter as claimed in claim 1, it is characterised in that the thickness successively alternation of each described three-hypers refracting film layer, the thickness of each described 4th low refracting film layer and the gradation law of described three-hypers refracting film layer successively alternation accordingly.
6. edge filter as claimed in claim 5, it is characterized in that, the thickness of each described three-hypers refracting film layer successively alternation within the scope of 10.6nm-41.5nm, the thickness of each described 4th low refracting film layer within the scope of 15.4nm-60.1nm with the gradation law of described three-hypers refracting film layer successively alternation accordingly.
7. the edge filter as described in any one in claim 6, it is characterised in that the number of plies of described three-hypers refracting film layer is 10-15, the number of plies of described 4th low refracting film layer is corresponding with the number of plies of described three-hypers refracting film layer.
8. edge filter as claimed in claim 1, it is characterized in that, described first high refraction film layer is any one first high refraction film layer made by Nb2O5, TiO2, PbTe, the second low refracting film layer that described second low refracting film layer is made up of SiO2, described three-hypers refracting film layer is one of them three-hypers refracting film layer made by CeO2, TiO2, the 4th low refracting film layer that described 4th low refracting film layer is made up of SiO2.
9. edge filter as claimed in claim 1, it is characterised in that described infrared cut of light membrane stack and/or described ultraviolet light cut film pile up the side deviating from described basket glass and be attached with anti-reflection film.
10. edge filter as claimed in claim 1, it is characterized in that, described anti-reflection film includes the 5th high refraction film layer and the mutual storehouse of the 6th low refracting film layer is formed, the 5th high refraction film layer that described 5th high refraction film layer is made up of Nb2O5, the 6th low refracting film layer that described 6th low refracting film layer is made up of SiO2.
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| CN201610274327.7A CN105738995A (en) | 2016-04-27 | 2016-04-27 | Cutoff filter |
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| CN201610274327.7A CN105738995A (en) | 2016-04-27 | 2016-04-27 | Cutoff filter |
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