CN102756456A - Die for pre-plastic package of a lead frame and encapsulation structure - Google Patents
Die for pre-plastic package of a lead frame and encapsulation structure Download PDFInfo
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- CN102756456A CN102756456A CN2011101068474A CN201110106847A CN102756456A CN 102756456 A CN102756456 A CN 102756456A CN 2011101068474 A CN2011101068474 A CN 2011101068474A CN 201110106847 A CN201110106847 A CN 201110106847A CN 102756456 A CN102756456 A CN 102756456A
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- Prior art keywords
- lead frame
- pit
- mould
- blocking block
- material blocking
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0007—Fluidic connecting means
- G01L19/0038—Fluidic connecting means being part of the housing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/142—Multiple part housings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Abstract
The invention provides a die for pre-plastic package of a lead frame and an encapsulation structure and belongs to the technical field of encapsulation of a sensor chip. The die is used for carrying out pre-plastic package on the lead frame of encapsulating the sensor chip and comprises an upper die body and a lower die body, wherein the upper die body is arranged at one side of the lead frame; the lower die frame is arranged at the second side opposite to the first side; a pit is arranged at the position corresponding to an inner pin of the lead frame on the surface of the die contacting with the first lateral surface of the lead frame, so that the lead frame extrudes towards the pit under the action of pressure in pre-plastic package, so as to form a corresponding convex baffle block. The encapsulation structure is molded by the die in pre-plastic package, and the inner pin of the lead frame is provided with the baffle block, which is formed by extruding towards the pit under the action of pressure in pre-plastic package and used as a bonding area. Therefore, the surface of the baffle block used as the bonding area is not easily polluted, and the reliability of bonding the lead is high.
Description
Technical field
The invention belongs to the encapsulation technology field of sensor chip, relate to that a kind of lead frame that is used for sensor chip carries out the mould of preformed envelope and by the encapsulating structure of this mould preformed envelope moulding.
Background technology
In the IC encapsulation technology, need require to select packing forms and packaging technology according to the circuit function of different circuit chips.Wherein, generally include lead-in wire bonding process and plastic packaging process in the potting process.In traditional encapsulation process, generally be earlier lead-in wire bonding, chip and the part lead frame plastic packaging behind the para-linkage again, to realize the fixing of parcel mode.But for sensor chip (for example, the MEMS pressure sensor chip), its potting process is different with traditional encapsulation process, at first, plastic casing is made in advance with the mode of preformed envelope, and then the bonding that goes between.Like this, can avoid sensor chip influenced by the adverse circumstances in the plastic packaging process.
Encapsulating structure intention of sealing moulding formation later on for the lead frame that is used for the encapsulated sensor chip at preformed shown in Figure 1.Wherein, (a) being the bottom-up orientation sketch map of encapsulating structure 10, (b) is the bottom orientation sketch map down of encapsulating structure 10.Shown in Figure 2 is at the cross section structure sketch map at the B-B place of Fig. 1 (b) behind the encapsulating structure shown in Figure 1 lead-in wire bonding.Wherein " bottom " is for the orientation of the sensor chip of placing.In this embodiment, encapsulating structure 10 is PDIP (Plastic Double In-line Package, the in line encapsulation of a plastics biserial) packing forms, and it is used for encapsulated sensor chip 18.In conjunction with illustrated in figures 1 and 2, wherein, 11 seal formed plastic-sealed body for preformed; Abbreviate preparatory plastic-sealed body as, 13 is the interior pin of lead frame, and 15 is the outer pin of lead frame; 17 is the island (Pad) of lead frame; 18 is packed sensor chip, 181 spun golds for the formation of lead-in wire bonding, and 19 is lid.Plastic-sealed body 11 is with protruding shell 111 in advance, the special construction requirement that this convexity shell 111 is sensor chips, and it is connected with the part contact of sensor chip.The size of protruding shell 111 relative plastic-sealed bodies 10 is bigger.The island 17 of lead frame is used to put sensor chip 18, in the lead-in wire bonding process, can will place sensor chip 18 and the interior pin 13 of lead frame on the island to realize types of attachment with spun gold 181 through wire bonder.Because needing the bonding zone of internal pin in the spun gold distribution process (bonding process also promptly goes between) heats to reach predetermined temperature.In this embodiment; In advance the below corresponding to the position of interior pin has bottoming hole 113 on the plastic-sealed body 11; It is used in lead-in wire bonding process para-linkage zone (being included in usually in pin field in) heats, and contacts with the well secured of interior pin with the realization spun gold.
Plastic-sealed body 11 normally forms through the mould injection molding in advance; For example; Upper and lower surfaces at lead frame is provided with mold and bed die respectively; Mold and bed die clamp lead frame, fill the die cavity of two moulds during plastic packaging with resin, thereby form preformed envelope body portion and the preformed envelope body portion under the lead frame on the lead frame.
But; When adopting existing mould structure to carry out the preformed envelope; The materials such as resin that are used to form preparatory plastic-sealed body are excessive to interior pin field from slit between mould (for example mold) and the leadframe surfaces; Possibly form the micro-structures such as plastics overlap that naked eyes are difficult to see, its para-linkage zone pollutes, and has a strong impact on the reliability of lead-in wire bonding.
In view of this, be necessary to design mould that a kind of novel being used to realize preformed envelope process to avoid the generation of above problem.
Summary of the invention
The technical problem that the present invention will solve is, prevents preformed envelope process cause the going between reliability decrease of bonding.
For solving above technical problem; According to one side of the present invention; A kind of mould is provided, is used for the lead frame of encapsulated sensor chip is carried out the preformed envelope, this mould comprises upper die body and lower mold body; When lead frame being carried out the preformed envelope; Said upper die body places first side that desire is placed said sensor chip on the said lead frame, and said lower mold body places second side opposite with said first side, wherein; On said upper die body and face that first side surface of said lead frame contacts, pit is set, so that extruding and form corresponding protruding material blocking block in said pit under the pressure effect of said lead frame when preformed seals corresponding to the position of the interior pin of said lead frame.
According to the preferred embodiment of mould provided by the invention, wherein, the said pit shoulder height of the recessed degree of depth that make progress greater than the convexity of said material blocking block.
Preferably, the said pit recessed depth bounds that makes progress is 0.02 millimeter to 0.1 millimeter.
Preferably, the shoulder height of the convexity of said material blocking block is said pit 5% to 60% of the recessed degree of depth that makes progress.
Preferably, through regulate the pressure of said lead frame when preformed seals so that said pit makes progress the shoulder height of the recessed degree of depth greater than the convexity of said material blocking block.
Preferably, said upper die body comprises upper impression bar and last model cavity mold insert, and said pit is set at said going up on model cavity mold insert and the face that first side surface of said lead frame contacts.
According to the embodiment of mould provided by the invention, wherein, said lower mold body comprises lower impressions bar and counterdie die cavity mold insert.
Preferably, said pit is circular.
Preferably, the area of said material blocking block be said in pin area 5% to 80%.
According to another aspect of the present invention; A kind of encapsulating structure is provided; Comprise the preparatory plastic-sealed body on lead frame and the lead frame, it is characterized in that said preparatory plastic-sealed body is through using the moulding of above-described arbitrary middle mould preformed envelope; The interior pin of said lead frame is provided with the material blocking block as the bonding zone, and said material blocking block forms through in the pit of said mould, pushing under the pressure effect of said lead frame when preformed seals.
According to the preferred embodiment of mould provided by the invention, wherein, the said pit shoulder height of the recessed degree of depth that make progress greater than the convexity of said material blocking block.
Preferably, the said pit recessed depth bounds that makes progress is 0.02 millimeter to 0.1 millimeter.
Preferably, the shoulder height of the convexity of said material blocking block is said pit 5% to 60% of the recessed degree of depth that makes progress.
Preferably, through regulate the pressure of said lead frame when preformed seals so that said pit makes progress the shoulder height of the recessed degree of depth greater than the convexity of said material blocking block.
Preferably, the area of said material blocking block be said in pin area 5% to 80%.
Technique effect of the present invention is; Through on the contact-making surface of upper die body corresponding to interior pin of mould, pit being set; Thereby the pressure that can when preformed seals, utilize preformed envelope makes lead frame in pit, push the material blocking block that forms convexity, thereby can stop the excessive surface to material blocking block of materials such as resin in the die cavity of mould through material blocking block, therefore; The surface of material blocking block can be not contaminated, and its reliability as bonding when zone lead-in wire bonding is high.
Description of drawings
From the following detailed description that combines accompanying drawing, will make above and other objects of the present invention and advantage clear more fully, wherein, same or analogous key element adopts identical label to represent.
Fig. 1 is used for the lead frame of encapsulated sensor chip in the encapsulating structure intention that the moulding of preformed envelope forms later on, wherein, (a) is the bottom-up orientation sketch map of encapsulating structure 10, (b) is the bottom orientation sketch map down of encapsulating structure 10.
Fig. 2 is at the cross section structure sketch map at the B-B place of Fig. 1 (b) behind the encapsulating structure shown in Figure 1 lead-in wire bonding.
Fig. 3 is the mould structure sketch map of the lead frame that is used for preformed envelope sensor device chip that provides according to one embodiment of the invention.
Fig. 4 is a C structure for amplifying sketch map partly shown in Figure 3.
Fig. 5 is to use formed encapsulating structure schematic cross-section after the moulding of mould preformed shown in Figure 3 envelope.
Fig. 6 is to use the vertical view of formed encapsulating structure after the moulding of mould preformed shown in Figure 3 envelope.
The specific embodiment
What introduce below is some among a plurality of possibility embodiment of the present invention, aims to provide basic understanding of the present invention, is not intended to confirm key of the present invention or conclusive key element or limits claimed scope.Understand easily, according to technical scheme of the present invention, do not changing under the connotation of the present invention, but one of ordinary skill in the art can propose other implementation of mutual alternative.Therefore, the following specific embodiment and accompanying drawing only are the exemplary illustrations to technical scheme of the present invention, and should not be regarded as qualification or the restriction to technical scheme of the present invention that all perhaps be regarded as of the present invention.
Among this paper; " on " and the directional terminology of D score be to define with the relative position between lead frame and the packed sensor chip; With respect to lead frame, the orientation that sensor chip is put be defined as " on " side, another opposite orientation then is defined as D score side.And, be to be understood that, the variation in the orientation of placing with respect to lead frame according to sensor chip, " on " and the orientation that referred to respectively of D score also change.
Among this paper, " preformed envelope " is meant the plastic packaging process before the lead-in wire bonding, and is defined as " plastic-sealed body in advance " by the plastic-sealed body on " preformed envelope " formed lead frame.
The mould structure sketch map that preformed seals the lead frame of sensor device chip that is used for for providing shown in Figure 3 according to one embodiment of the invention.Shown in Figure 4 is C structure for amplifying sketch map partly shown in Figure 3.In this embodiment, after lead frame 25 preparations form, in preformed envelope process, form preparatory plastic-sealed body (11) shown in Figure 1 with mould 20.Preformed is honored as a queen and is just sealed lead-in wire bonding sensor chip in institute's area surrounded at preformed, thereby can avoid sensor chip influenced by the adverse circumstances in the plastic packaging process.
In conjunction with Fig. 3 and shown in Figure 4, mould 20 comprises upper die body 21 and lower mold body 23, and wherein upper die body is positioned at a side of the placement sensor chip of lead frame 25, and lower mold body is positioned at the opposite side of lead frame 25.Upper die body 21 comprises upper impression bar 211, goes up model cavity mold insert 213; Lower mold body 23 comprises lower impressions bar 231, counterdie die cavity mold insert 233.Upper die body 21 is assembled fixing with lower mold body 23; By clamping lead frame 25 shown in Figure 3; Thereby can in the die cavity of the die cavity of upper die body and drag, all inject the resinae fluent material, after further mould is removed in cooling, can on lead frame, form the preparatory plastic-sealed body of reservation shape.The structure (not shown) of last model cavity mold insert 213 formed die cavities designs according to the shape of preparatory plastic-sealed body and the requirement of injection molding; It is not restrictive in the present invention; Likewise; Structure for counterdie die cavity mold insert 233 formed die cavities is not restrictive equally, and for example, the protruding shell 111 in the plastic-sealed body 11 also is to form through injection molding in the die cavity of lower mold body in advance.
Continue as shown in Figure 4, on counterdie die cavity mold insert 233 and surface that the upper surface of lead frame 25 contacts, pit 214 is set corresponding to the bonding regional location of interior pin 251.In one example, pit 214 is processed to form through electric spark mode or machining mode, and concrete form processing is not limited by instance of the present invention.Pit 214 can be the column type pit; The height H 1 of column type pit (the recessed degree of depth also promptly makes progress) design is in smaller scope; Thereby can be in preformed envelope process, when between upper die body and lower mold body, applying certain clamping pressure, the part of the interior pin of lead frame can be squeezed into the material blocking block 252 that formation raises up in the pit.Preferably, the size range of the height H 1 of column type pit is 0.02mm to 0.1mm, for example, and 0.04mm.Usually; Because lead frame 25 all is based on metal material and forms; When between upper die body and lower mold body, applying certain clamping pressure, lead frame 25 can produce certain amount of plastic deformation, causes pushing in the pit 214 on the part metals forming step-like material blocking block 252.Because be that extruding forms, the shape of material blocking block 252 and the shape of pit are complementary, and for example are all toroidal, and its shoulder height is H2.Therefore, under the tight contact action of the bottom surface of the step edge of material blocking block 252 and counterdie die cavity mold insert 233 and under the step barrier effect, during the preformed envelope, institute inject resin material be difficult to from the slit 253 push excessive to the step surface of material blocking block 252.Therefore, material blocking block 252 has the excessive effect of barrier resin, and during as the bonding zone, the reliability of lead-in wire bonding will can not receive the influence of excessive materials such as resin with the step surface of material blocking block 252.
Continue as shown in Figure 4ly, preferably, the shoulder height H2 of material blocking block 252 is less than the height H 1 of pit 214; Like this; When guaranteeing between upper die body and lower mold body, to apply certain clamping pressure, do not contact between the bottom of the step surface of material blocking block 252 (bonding face also promptly goes between) and pit 214, be yet; There is not mutual extrusion between the bottom of the step surface of material blocking block 252 and pit 214; Thereby do not destroy the reset condition of the step surface of material blocking block 252, this helps the bonding between spun gold and the step surface, further improves the reliability of lead-in wire bonding.For example, if the surface of the interior pin 252 of lead frame for electroplating silver layer, if there is the mutual extrusion of certain pressure between the bottom of the step surface of material blocking block 252 and pit 214, can cause the hardness raising of silver layer, this is unfavorable for being connected between spun gold and the step surface.
Preferably, can control the height of step height H 2 through the clamping pressure between adjusting upper die body and the lower mold body.Those skilled in the art can select suitable clamping pressure according to the material of the lead frame material that is adopted, mould, the factors such as height H 1 of pit 214, so that owing to push the height H 1 of the shoulder height H2 of the plastic deformation that is produced less than pit 214.Preferably, shoulder height H2 be pit 214 height H 1 5% to 60%, for example, when H1 is 0.04mm, H2 is the 0.02mm effect, can select the clamping pressure about 38 tons this moment.
One skilled in the art will appreciate that the shape of pit 214 and the shape of material blocking block 252 are not restrictive, it can come concrete design according to the shape of interior pin 251, and for example, it can also be for square etc.And the area of pin 251 in the area of the step surface of material blocking block 252 (equaling the floor space of pit 214 basically) can be less than or equal to, but the size of its area must satisfy the requirement of its bonding region domain-functionalities again.Preferably, the area of the step surface of material blocking block 252 be interior pin area 5% to 80%.
Further; Only illustrated wherein formation among Fig. 3 corresponding to the material blocking block on the pit design of the mould at interior pin place and the interior pin; Should be noted that the corresponding position of pin in each of lead frame, its mould has also carried out the improvement design of same pit mode.
Need to prove, though the structure of the island among Fig. 3 and not exclusively be same as the structure of island illustrated in figures 1 and 2 17, be appreciated that into lead frame among Fig. 3 be the another instantiation among the lead frame embodiment shown in Fig. 1.The design improvement of aforesaid pit; Can be applied to the mould of the sensor chip that needs the preformed envelope of different packing forms; OCDIP6 (Open Cavity Plastic Double In-line Package for example; The in line encapsulation of the plastics biserial of beginning to speak) packing forms, be applied to the mould of preformed envelope of the encapsulation of medical MEMS (Micro-Electro-Mechanical System, MEMS) sensor chip.
Shown in Figure 5 for using formed encapsulating structure schematic cross-section after the mould preformed envelope moulding shown in Figure 3, shown in Figure 6 for using the vertical view of formed encapsulating structure after the mould preformed envelope moulding shown in Figure 3.In this embodiment, comprise lead frame and preparatory plastic-sealed body in the encapsulating structure 20.Than encapsulating structure embodiment illustrated in fig. 2, formed material blocking block 252 on the pin 251 in the improvements of encapsulating structure 20 mainly are.As previously discussed, the generation plastic deformation of pin place formed in material blocking block 252 was caused by the clamping pressure between upper die body and the lower mold body.Therefore, material blocking block 252 is also regional as bonding on the pin 251 in placing.Like the structure institute sketch map of amplifier section, the shoulder height H2 of material blocking block 252 is very little, and still, it is excessive to step surface that this step of ingenious design can prevent that material such as preformed when envelope resin is extruded, and guaranteed that the bonding zone is not contaminated.
The concrete preferred structure instance of material blocking block 252 is illustrated in the description about material blocking block 252 in Fig. 3 and Fig. 4, gives unnecessary details no longer one by one at this.
The encapsulating structure that above example has mainly been explained mould of the present invention and used this mould preformed to be honored as a queen and to form.Although only some of them embodiment of the present invention is described, those of ordinary skills should understand, and the present invention can be in not departing from its purport and scope implements with many other forms.Therefore, example of being showed and embodiment are regarded as schematic and nonrestrictive, are not breaking away under the situation of liking defined spirit of the present invention of each claim and scope enclosed, and the present invention possibly contained various modifications and replacement.
Claims (15)
1. mould; Be used for the lead frame of encapsulated sensor chip is carried out the preformed envelope; Said mould comprises upper die body and lower mold body; Said upper die body places first side of said lead frame, and said lower mold body places second side opposite with said first side, it is characterized in that; On said upper die body and face that first side surface of said lead frame contacts, pit is set, so that extruding and form corresponding protruding material blocking block in said pit under the pressure effect of said lead frame when preformed seals corresponding to the position of the interior pin of said lead frame.
2. mould as claimed in claim 1 is characterized in that, the said pit shoulder height of the recessed degree of depth greater than the convexity of said material blocking block that make progress.
3. mould as claimed in claim 2 is characterized in that, the said pit recessed depth bounds that makes progress is 0.02 millimeter to 0.1 millimeter.
4. mould as claimed in claim 2 is characterized in that, the shoulder height of the convexity of said material blocking block is make progress 5% to 60 % of the recessed degree of depth of said pit.
5. mould as claimed in claim 2 is characterized in that, through regulate the pressure of said lead frame when preformed seals so that said pit makes progress the shoulder height of the recessed degree of depth greater than the convexity of said material blocking block.
6. according to claim 1 or claim 2 mould is characterized in that said upper die body comprises upper impression bar and last model cavity mold insert, and said pit is set at said going up on model cavity mold insert and the face that first side surface of said lead frame contacts.
7. according to claim 1 or claim 2 mould is characterized in that said lower mold body comprises lower impressions bar and counterdie die cavity mold insert.
8. according to claim 1 or claim 2 mould is characterized in that, said pit is circular.
9. according to claim 1 or claim 2 mould is characterized in that, the area of said material blocking block be said in pin area 5% to 80%.
10. encapsulating structure; Comprise the preparatory plastic-sealed body on lead frame and the lead frame; It is characterized in that; Said preparatory plastic-sealed body is through using mould preformed envelope as claimed in claim 1 moulding, and the interior pin of said lead frame is provided with the material blocking block as the bonding zone, and said material blocking block forms through in the pit of said mould, pushing under the pressure effect of said lead frame when preformed seals.
11. encapsulating structure as claimed in claim 10 is characterized in that, the said pit shoulder height of the recessed degree of depth greater than the convexity of said material blocking block that make progress.
12. encapsulating structure as claimed in claim 11 is characterized in that, the said pit recessed depth bounds that makes progress is 0.02 millimeter to 0.1 millimeter.
13. encapsulating structure as claimed in claim 11 is characterized in that, the shoulder height of the convexity of said material blocking block is said pit 5% to 60% of the recessed degree of depth that makes progress.
14. encapsulating structure as claimed in claim 11 is characterized in that, through regulate the pressure of said lead frame when preformed seals so that said pit makes progress the shoulder height of the recessed degree of depth greater than the convexity of said material blocking block.
15. like claim 10 or 11 described encapsulating structures, it is characterized in that, the area of said material blocking block be said in pin area 5% to 80%.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110106847.4A CN102756456B (en) | 2011-04-27 | 2011-04-27 | Die for pre-plastic package of a lead frame and encapsulation structure |
| PCT/CN2011/001859 WO2012145879A1 (en) | 2011-04-27 | 2011-11-04 | Mold for pre-plastic-sealing lead frames, process for pre-plastic-sealing and packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110106847.4A CN102756456B (en) | 2011-04-27 | 2011-04-27 | Die for pre-plastic package of a lead frame and encapsulation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102756456A true CN102756456A (en) | 2012-10-31 |
| CN102756456B CN102756456B (en) | 2015-04-22 |
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| CN201110106847.4A Active CN102756456B (en) | 2011-04-27 | 2011-04-27 | Die for pre-plastic package of a lead frame and encapsulation structure |
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| Country | Link |
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| CN (1) | CN102756456B (en) |
| WO (1) | WO2012145879A1 (en) |
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|---|---|---|---|---|
| CN107696422B (en) * | 2017-11-06 | 2023-10-13 | 环维电子(上海)有限公司 | Plastic packaging mold and plastic packaging method |
| CN112885743A (en) * | 2021-01-14 | 2021-06-01 | 江苏和睿半导体科技有限公司 | Plastic packaging device for chip packaging and testing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61170038A (en) * | 1985-01-23 | 1986-07-31 | Toshiba Corp | Metal mold for resin sealing |
| CN1163478A (en) * | 1996-03-07 | 1997-10-29 | 松下电子工业株式会社 | Electronic module and its producing method and its used lead wire frame and metal mould |
| JP2003053775A (en) * | 2001-08-15 | 2003-02-26 | Shinko Electric Ind Co Ltd | Resin sealing mold and method for manufacturing semiconductor device using the mold |
| CN1842911A (en) * | 2003-01-29 | 2006-10-04 | 跃进封装公司 | Package for integrated circuit lead |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5799748A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal mold for resin sealing in semiconductor device |
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2011
- 2011-04-27 CN CN201110106847.4A patent/CN102756456B/en active Active
- 2011-11-04 WO PCT/CN2011/001859 patent/WO2012145879A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61170038A (en) * | 1985-01-23 | 1986-07-31 | Toshiba Corp | Metal mold for resin sealing |
| CN1163478A (en) * | 1996-03-07 | 1997-10-29 | 松下电子工业株式会社 | Electronic module and its producing method and its used lead wire frame and metal mould |
| JP2003053775A (en) * | 2001-08-15 | 2003-02-26 | Shinko Electric Ind Co Ltd | Resin sealing mold and method for manufacturing semiconductor device using the mold |
| CN1842911A (en) * | 2003-01-29 | 2006-10-04 | 跃进封装公司 | Package for integrated circuit lead |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102756456B (en) | 2015-04-22 |
| WO2012145879A1 (en) | 2012-11-01 |
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