CN102756325B - 用来抛光相变合金的化学机械抛光组合物和方法 - Google Patents

用来抛光相变合金的化学机械抛光组合物和方法 Download PDF

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Publication number
CN102756325B
CN102756325B CN201210139124.9A CN201210139124A CN102756325B CN 102756325 B CN102756325 B CN 102756325B CN 201210139124 A CN201210139124 A CN 201210139124A CN 102756325 B CN102756325 B CN 102756325B
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CN
China
Prior art keywords
chemical mechanical
mechanical polishing
substrate
phase change
polishing composition
Prior art date
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Expired - Fee Related
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CN201210139124.9A
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English (en)
Chinese (zh)
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CN102756325A (zh
Inventor
李在锡
郭毅
K-A·K·雷迪
张广云
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ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201210139124.9A 2011-04-28 2012-04-26 用来抛光相变合金的化学机械抛光组合物和方法 Expired - Fee Related CN102756325B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/096,707 US8790160B2 (en) 2011-04-28 2011-04-28 Chemical mechanical polishing composition and method for polishing phase change alloys
US13/096,707 2011-04-28

Publications (2)

Publication Number Publication Date
CN102756325A CN102756325A (zh) 2012-10-31
CN102756325B true CN102756325B (zh) 2015-06-17

Family

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Family Applications (1)

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CN201210139124.9A Expired - Fee Related CN102756325B (zh) 2011-04-28 2012-04-26 用来抛光相变合金的化学机械抛光组合物和方法

Country Status (6)

Country Link
US (1) US8790160B2 (enExample)
JP (1) JP5960489B2 (enExample)
CN (1) CN102756325B (enExample)
DE (1) DE102012007812A1 (enExample)
FR (1) FR2974531B1 (enExample)
TW (1) TWI525183B (enExample)

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US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物
US9238755B2 (en) * 2011-11-25 2016-01-19 Fujima Incorporated Polishing composition
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
KR20160009644A (ko) * 2013-05-15 2016-01-26 바스프 에스이 적어도 하나의 iii-v 재료를 포함하는 물질 또는 층을 연마하기 위한 cmp 조성물의 용도
JP6366952B2 (ja) * 2013-08-29 2018-08-01 住友化学株式会社 ニオブ酸系強誘電体薄膜素子の製造方法
KR102212377B1 (ko) 2014-06-16 2021-02-04 삼성전자주식회사 상변화 메모리 소자의 제조 방법
CN112353753A (zh) * 2020-11-17 2021-02-12 四川大学华西医院 一种靶向中枢神经系统的纳米药物载体
EP4490772A4 (en) * 2022-03-10 2025-06-25 FUJIFILM Electronic Materials U.S.A, Inc. ETCHING COMPOSITIONS

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CN1392215A (zh) * 1998-12-28 2003-01-22 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
CN1616572A (zh) * 2004-09-24 2005-05-18 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用
CN101370897A (zh) * 2006-02-01 2009-02-18 卡伯特微电子公司 用于相变合金的化学机械抛光的组合物及方法
CN101372606A (zh) * 2008-10-14 2009-02-25 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料氧化铈化学机械抛光液

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US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
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CN1616572A (zh) * 2004-09-24 2005-05-18 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用
CN101370897A (zh) * 2006-02-01 2009-02-18 卡伯特微电子公司 用于相变合金的化学机械抛光的组合物及方法
CN101372606A (zh) * 2008-10-14 2009-02-25 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料氧化铈化学机械抛光液

Also Published As

Publication number Publication date
FR2974531B1 (fr) 2016-03-04
TW201247856A (en) 2012-12-01
CN102756325A (zh) 2012-10-31
TWI525183B (zh) 2016-03-11
JP2012235111A (ja) 2012-11-29
DE102012007812A1 (de) 2012-10-31
US8790160B2 (en) 2014-07-29
FR2974531A1 (fr) 2012-11-02
US20120276819A1 (en) 2012-11-01
JP5960489B2 (ja) 2016-08-02

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