CN102744652B - Device and method for machining large-area plane optical element - Google Patents
Device and method for machining large-area plane optical element Download PDFInfo
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- CN102744652B CN102744652B CN201210250993.9A CN201210250993A CN102744652B CN 102744652 B CN102744652 B CN 102744652B CN 201210250993 A CN201210250993 A CN 201210250993A CN 102744652 B CN102744652 B CN 102744652B
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Abstract
The invention discloses a device and a method for machining a large-area plane optical element, and relates to a device and a method for machining a plane optical element. With the adoption of the device and the method, the problems that the prior plasma polishing device is high in cost, and the polishing method is low in efficiency are solved. Two external electrodes and two isolating plates are opposite in pairs to form a closed structure; an internal electrode is located at the two external electrodes; two plasma generating cavities are formed among the two external electrodes, the two isolating plates and the internal electrode; and a helium tank, a carbon tetrafluoride bottle and an oxygen bottle are communicated with two first through holes through a flow controller. The method for machining the large-area plane optical element comprises the steps of adding cooling water to the electrodes, preheating the flow controller, controlling gas flow of helium and the carbon tetrafluoride by the flow controller, placing a workpiece to be machined on the electrodes on a working table so as to enable the workpiece to be machined to rotate counterclockwise, gradually increasing power on a radio frequency power source, controlling discharge of the stable plasma, turning off the radio frequency power source and a valve, and taking out the workpiece to be machined. The device and the method can be used for machining the large-area plane optical element.
Description
Technical field
The present invention relates to a kind of large-area planar optical effect correction device and processing method.
Background technology
In recent years, demand for large-scale precision optical element gets more and more, adopt conventional method machining optical element, optical element surface is caused to damage and sub-surface damage, therefore follow-up polishing is needed, such as air bag polishing, chemical polishing or MRF etc., the subject matter that above-mentioned finishing method exists is that the process-cycle is long, and the subject matter that namely fine finishining of current large-scale optical element faces is that efficiency is low.
Plasmarized optical polishing makes reacting gas be in active plasma, excite the carrying out of chemical reaction, plasma polishing belongs to noncontact polishing, while avoiding surface and sub-surface damage generation, due to chemical reaction to carry out removal efficiency higher.
Plasmarized optical polishing has obtained people and has applied widely, but existing plasma burnishing device carries out under vacuum conditions, causes existing optical effect correction installation cost high; For the processing of large-scale ultra-precise optical part, still there is inefficient problem in existing point contact type charging method and small-bore coaxial discharge method.
Summary of the invention
The present invention for the existing plasma burnishing device cost of solution is high and the inefficient problem of existing plasma polishing method, and then proposes a kind of large-area planar optical effect correction device and processing method.
The present invention solves the problems of the technologies described above the technical scheme taked to be:
A kind of large-area planar optical effect correction device of the present invention comprises radio-frequency power supply, earth connection, interior electrode, deflector, cooling tube, water tank, flow controller, helium tank, carbon tetrafluoride bottle, oxygen cylinder, two external electrodes and two division boards, described radio-frequency power supply, earth connection, interior electrode, two external electrodes and two division boards form plasma flat discharging structure, two external electrodes are symmetrical arranged, two external electrodes are relative between two with two division boards forms enclosed construction, described deflector be arranged on two external electrodes top and between two external electrodes, the lower end of interior electrode through deflector and interior electrode two external electrodes, described deflector is processed with along its length two the first through holes, two the first through holes are symmetrical arranged about interior electrode, described deflector is processed with along its length two and ranked second through hole, each first through hole and corresponding one ranked second through hole and is interconnected, described radio-frequency power supply and interior Electrode connection, described two external electrodes pass through ground connection, two external electrodes, form two plasmas between two division boards and interior electrode and produce chamber, described helium tank, carbon tetrafluoride bottle is communicated with two the first through holes by flow controller with oxygen cylinder, described interior electrode is processed with the first cooling duct, each external electrode is processed with the second cooling duct, first cooling duct is all communicated with water tank by cooling tube with the second cooling duct, flow controller is provided with helium control valve, carbon tetrafluoride control valve and oxygen control valve, helium control valve is for controlling the flow of helium, carbon tetrafluoride control valve is for controlling the flow of carbon tetrafluoride, oxygen control valve is for controlling the flow of oxygen.
Large-area planar optical effect correction method of the present invention realizes according to following steps:
Step one, by water pump, the cooling water in water tank is passed into the first cooling duct and second cooling duct of interior electrode and two external electrodes;
Step 2, open flow controller switch, open radio-frequency power supply and adaptation power supply simultaneously, to flow controller and radio-frequency power supply preheating 10 ~ 15 minutes;
Step 3, open helium tank, carbon tetrafluoride bottle and oxygen cylinder, wherein helium tank is plasma gas bottle, carbon tetrafluoride bottle is reacting gas bottle, the gas flow of helium and carbon tetrafluoride is regulated by flow controller, the flow of helium is 2L/min ~ 5L/min, and the gas flow of carbon tetrafluoride is 20ml/min ~ 90ml/min;
Step 4, workpiece to be processed is placed on work top electrode on, workpiece to be processed is rotated counterclockwise;
Step 5, open helium control valve, radio frequency power supply progressively increases power, controls power bracket 200W ~ 400W, and control reflection power is 0 simultaneously;
Step 6, to be exported by workpiece align with jet underlying gas, control stable plasma discharge, controlling the residence time of torch in heating region is 5min ~ 20min;
Step 7, closedown radio-frequency power supply, close helium tank, close carbon tetrafluoride bottle and oxygen, close helium control valve, carbon tetrafluoride control valve and oxygen control valve, take out workpiece to be processed.
The invention has the beneficial effects as follows:
Large-area planar optical effect correction device of the present invention is all processed with cooling duct in the inside of external electrode and interior electrode, achieve the cooling of electrode in process, reduce the electrode temperature in process, thus can process for a long time, make the activity of reactive ion relatively high, processing unit (plant) of the present invention has two plasmas generation chambers simultaneously, compared with existing single plasma chamber, substantially increase clearance, namely substantially increase working (machining) efficiency, working (machining) efficiency improves about ten times;
Large-area planar optical effect correction device of the present invention carries out under non-vacuum environment, with existing plasma burnishing device be carry out under vacuum conditions compared with, greatly reduce cost, installation cost is only 1/10th of existing plasma burnishing device;
Large-area planar optical effect correction method of the present invention can adopt jet and contact electric discharge processing acting in conjunction, the working (machining) efficiency of large-scale optical element can be improved, for sphere and aspheric surface optical accessory, can be reached by the shape changing electrode tip and meet face, workpiece to be processed surface type, thus processed and applied scope is more extensive; The present invention simultaneously can carry out the removal of damaged surface layer for the workpiece producing damaged surface layer;
Large-area planar optical effect correction method using plasma slab discharge processing of the present invention, while generation high-density plasma, adopt jet processing method, compared with existing contact processing method, product can be discharged in time, avoids the generation of the phenomenon of product heap sum deposition.
Large-area planar optical effect correction method of the present invention makes workpiece to be processed be rotated counterclockwise, and large-area planar optical element can reach uniform High-speed machining.
Accompanying drawing explanation
Fig. 1 is the overall structure front view of large-area planar optical effect correction device of the present invention, Fig. 2 is the top view of plasma flat discharging structure, Fig. 3 is the longitudinal sectional view of deflector, Fig. 4 is the sectional view of the first cooling duct of interior electrode, and Fig. 5 is the sectional view of the second cooling duct of external electrode.
Detailed description of the invention
Detailed description of the invention one: as shown in Fig. 1 ~ 5, the large-area planar optical effect correction device of present embodiment comprises radio-frequency power supply 1, earth connection 2, interior electrode 4, deflector 5, cooling tube 7, water tank 8, flow controller 17, helium tank 10, carbon tetrafluoride bottle 11, oxygen cylinder 12, two external electrodes 3 and two division boards 6, described radio-frequency power supply 1, earth connection 2, interior electrode 4, two external electrodes 3 and two division boards 6 form plasma flat discharging structure, two external electrodes 3 are symmetrical arranged, two external electrodes 3 are relative between two with two division boards 6 forms enclosed construction, described deflector 5 be arranged on two external electrodes 3 top and between two external electrodes 3, the lower end of interior electrode 4 through deflector 5 and interior electrode 4 two external electrodes 3, described deflector 5 is processed with along its length two the first through hole 5-1, two the first through hole 5-1 are symmetrical arranged about interior electrode, described deflector 5 is processed with two along its length and ranked second through hole 5-2, each first through hole 5-1 and corresponding one ranked second through hole 5-2 and is interconnected, described radio-frequency power supply 1 is connected with interior electrode 4, described two external electrodes 3 are by earth connection 2 ground connection, two external electrodes 3, form two plasmas between two division boards 6 and interior electrode 4 and produce chamber 18, described helium tank 10, carbon tetrafluoride bottle 11 is communicated with two the first through hole 5-1 by flow controller 17 with oxygen cylinder 12, described interior electrode 4 is processed with the first cooling duct 4-1, each external electrode 3 is processed with the second cooling duct 3-1, first cooling duct 4-1 is all communicated with water tank 8 by cooling tube 7 with the second cooling duct 3-1, flow controller 17 is provided with helium control valve 13, carbon tetrafluoride control valve 14 and oxygen control valve 15, helium control valve 13 is for controlling the flow of helium, carbon tetrafluoride control valve 14 is for controlling the flow of carbon tetrafluoride, oxygen control valve 15 is for controlling the flow of oxygen.
The scope that large area is is 400 × 400 square millimeters ~ 500 × 500 square millimeters.
Detailed description of the invention two: as shown in Figure 4, described in present embodiment, the first cooling duct 4-1 is U-shaped.Design like this, can reduce the temperature of interior electrode.Other composition and annexation identical with detailed description of the invention one.
Detailed description of the invention three: as shown in Figure 1, processing unit (plant) described in present embodiment also comprises Gas mixing valve 9, and flow controller 17 is communicated with two the first through hole 5-1 by Gas mixing valve 9.Design like this, fully can mix the gas in flow controller 17.Other composition and annexation identical with detailed description of the invention one or two.
Detailed description of the invention four: as shown in Fig. 1 ~ 5, the large-area planar optical effect correction method step of present embodiment is as follows:
Step one, by water pump, the cooling water in water tank 8 is passed into the first cooling duct 4-1 and the second cooling duct 4-2 of interior electrode 4 and two external electrodes 3;
Step 2, open flow controller 17 switch, open radio-frequency power supply 1 and adaptation power supply simultaneously, to flow controller 17 and radio-frequency power supply 1 preheating 10 ~ 15 minutes;
Step 3, open helium tank 10, carbon tetrafluoride bottle 11 and oxygen cylinder 12, wherein helium tank 10 is plasma gas bottle, carbon tetrafluoride bottle 11 is reacting gas bottle, the gas flow of helium and carbon tetrafluoride is regulated by flow controller 17, the flow of helium is 2L/min ~ 5L/min, and the gas flow of carbon tetrafluoride is 20ml/min ~ 90ml/min;
Step 4, workpiece to be processed 16 is placed on work top electrode on, workpiece to be processed 16 is rotated counterclockwise;
Step 5, open helium control valve 13, radio frequency power supply 1 progressively increases power, controls power bracket 200W ~ 400W, and control reflection power is 0 simultaneously;
Step 6, to be exported by workpiece align with jet underlying gas, control stable plasma discharge, controlling the residence time of torch in heating region is 5min ~ 20min;
Step 7, closedown radio-frequency power supply 1, close helium tank 10, close carbon tetrafluoride bottle 11 and oxygen 12, close helium control valve 13, carbon tetrafluoride control valve 14 and oxygen control valve 15, take out workpiece to be processed 16.
As shown in Figure 1, processing adopts the mode of jet to process optical element and damaged surface layer removal.By parallel for electrode surface and workpiece to be processed 16 surface and keep suitable distance in process, namely airflow direction is perpendicular to workpiece to be processed 16 surface.During electric discharge, the action of plasma produced is in workpiece to be processed 16 surface, because workpiece to be processed 16 surperficial ionization electrode distance is very near, so the plasma that the straight line sword place electric discharge of end face produces is known from experience be applied directly to workpiece to be processed surface, be conducive to the carrying out reacted;
Can also workpiece be placed on ground electrode, now owing to defining again between capacitive region between the ground electrode under the end face of interior electrode and workpiece to be processed 16, thus expansion stream range, also carry out contact electric discharge processing simultaneously, the processing request of large distance can have been met.
Claims (4)
1. a large-area planar optical effect correction device, it is characterized in that: described processing unit (plant) comprises radio-frequency power supply (1), earth connection (2), interior electrode (4), deflector (5), cooling tube (7), water tank (8), flow controller (17), helium tank (10), carbon tetrafluoride bottle (11), oxygen cylinder (12), two external electrodes (3) and two division boards (6), described radio-frequency power supply (1), earth connection (2), interior electrode (4), two external electrodes (3) and two division boards (6) form plasma flat discharging structure, two external electrodes (3) are symmetrical arranged, two external electrodes (3) are relative between two with two division boards (6) forms enclosed construction, described deflector (5) is arranged on the top of two external electrodes (3) and is positioned between two external electrodes (3), the lower end of interior electrode (4) is through deflector (5) and interior electrode (4) is positioned at two external electrodes (3), described deflector (5) is processed with along its length two the first through holes (5-1), two the first through holes (5-1) are symmetrical arranged about interior electrode, described deflector (5) is processed with along its length two and ranked second through hole (5-2), each first through hole (5-1) and corresponding one ranked second through hole (5-2) and is interconnected, described radio-frequency power supply (1) is connected with interior electrode (4), described two external electrodes (3) are by earth connection (2) ground connection, two external electrodes (3), form two plasmas between two division boards (6) and interior electrode (4) and produce chamber (18), described helium tank (10), carbon tetrafluoride bottle (11) is communicated with two the first through holes (5-1) by flow controller (17) with oxygen cylinder (12), described interior electrode (4) is processed with the first cooling duct (4-1), each external electrode (3) is processed with the second cooling duct (3-1), first cooling duct (4-1) is all communicated with water tank (8) by cooling tube (7) with the second cooling duct (3-1), flow controller (17) is provided with helium control valve (13), carbon tetrafluoride control valve (14) and oxygen control valve (15), helium control valve (13) is for controlling the flow of helium, carbon tetrafluoride control valve (14) is for controlling the flow of carbon tetrafluoride, oxygen control valve (15) is for controlling the flow of oxygen.
2. large-area planar optical effect correction device according to claim 1, is characterized in that: described first cooling duct (4-1) is in U-shaped.
3. large-area planar optical effect correction device according to claim 1 and 2, it is characterized in that: described processing unit (plant) also comprises Gas mixing valve (9), flow controller (17) is communicated with two the first through holes (5-1) by Gas mixing valve (9).
4. utilize a planar wave method of processing parts for the large-area planar optical effect correction device in claim 1 ~ 3 described in arbitrary claim, it is characterized in that planar wave method of processing parts step is as follows:
Step one, by water pump, the cooling water in water tank (8) is passed into the first cooling duct (4-1) and the second cooling duct (4-2) of interior electrode (4) and two external electrodes (3);
Step 2, open flow controller (17) switch, open radio-frequency power supply (1) and adaptation power supply simultaneously, to flow controller (17) and radio-frequency power supply (1) preheating 10 ~ 15 minutes;
Step 3, open helium tank (10), carbon tetrafluoride bottle (11) and oxygen cylinder (12), wherein helium tank (10) is plasma gas bottle, carbon tetrafluoride bottle (11) is reacting gas bottle, the gas flow of helium and carbon tetrafluoride is regulated by flow controller (17), the flow of helium is 2L/min ~ 5L/min, and the gas flow of carbon tetrafluoride is 20ml/min ~ 90ml/min;
Step 4, workpiece to be processed (16) to be placed on the electrode of work top, workpiece to be processed (16) is rotated counterclockwise;
Step 5, open helium control valve (13), radio frequency power supply (1) progressively increases power, controls power bracket 200W ~ 400W, and control reflection power is 0 simultaneously;
Step 6, to be exported by workpiece align with jet underlying gas, control stable plasma discharge, controlling the residence time of torch in heating region is 5min ~ 20min;
Step 7, closedown radio-frequency power supply (1), close helium tank (10), close carbon tetrafluoride bottle (11) and oxygen cylinder (12), close helium control valve (13), carbon tetrafluoride control valve (14) and oxygen control valve (15), take out workpiece to be processed (16).
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| CN201210250993.9A CN102744652B (en) | 2012-07-19 | 2012-07-19 | Device and method for machining large-area plane optical element |
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| CN201210250993.9A CN102744652B (en) | 2012-07-19 | 2012-07-19 | Device and method for machining large-area plane optical element |
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| CN102744652B true CN102744652B (en) | 2015-05-13 |
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