CN103231418B - Method utilizing electrode-modularized atmospheric plasma to process silicon carbide sealing ring part - Google Patents
Method utilizing electrode-modularized atmospheric plasma to process silicon carbide sealing ring part Download PDFInfo
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Abstract
A method utilizing electrode-modularized atmospheric plasma to process a silicon carbide sealing ring part belongs to the technical field of utilizing plasma to process the silicon carbide sealing ring part and aims at solving the problem of processing difficulty of the silicon carbide sealing ring part. The method comprises: firstly, arranging a plurality of mounting holes of a sheet electrode module on a disc-shaped electrode rack; secondly, mounting the silicon carbide sealing ring part to be processed on a ground electrode; thirdly, enabling the lower end surface of the sheet electrode module to be close to the surface of the silicon carbide sealing ring part to be processed; fourthly, preheating the silicon carbide sealing ring part to be heated; fifthly, inletting mixed gas and starting a radio-frequency power supply; sixthly, controlling the motion trail of the sheet electrode module; and lastly, taking out the silicon carbide sealing ring part to be processed. The method utilizing the electrode-modularized atmospheric plasma to process the silicon carbide sealing ring part can subject the surface of the silicon carbide sealing ring part with high surface requirements, huge processing difficulty and multiple processing procedures to a high-precision and high-efficiency process which includes uniform rough surface removal, then fine surface removal of local figuration, and finally microstructure etching.
Description
Technical field
The invention belongs to the technical field of plasma process silicon carbide sealed ring class part.
Background technology
Along with developing rapidly of modern science and technology, in the industrial circles such as nuclear industry, petroleum industry, chemical engineering industry, chemical fibre, chemical fertilizer, atomic energy, Aero-Space and machine-building, mechanical seal is had higher requirement.
The chemical resistance of carborundum (SiC) is good, intensity is high, hardness is high, and anti-wear performance is good, coefficient of friction is little, has that good dimensional stability, thermal coefficient of expansion are low, Heat stability is good at the temperature that non-oxidizability is strong, high.In addition, carbofrax material has the feature such as moderate density, higher specific stiffness, preferably thermal conductivity factor, resistance to sudden heating, anti-thermal shock, isotropic mechanical performance, high elastic modulus and long service life.Can be used for radioactivity, corrosivity, severe toxicity, inflammable, explosive, high temperature, many complex working conditions such as high-purity, ultra-clean.Because of but manufacture the ideal material of sealing ring.
But carbofrax material hardness is high simultaneously, fragility is large, and the difficulty of processing on surface is large.With the processing of traditional processing method, process is quite consuming time and efficiency is quite low, face type finishing difficulty, costly; Crudy is uncontrollable in addition, and crudy uniformity is poor; And precision is low, tool wear quickly, serious wear.This makes the processing of silicon carbide sealed ring class part very not easily.
In order to make sealing ring can play good sealing effectiveness, sealing ring surface needs to process micro-structural.In this case, during fitting tight ring, the micro-structural that sealing ring exists on the surface can make up the distortion produced in assembling process, thus plays better sealing function.But this can increase the complexity of process algorithm and the complexity of control procedure, increases the requirement to process stability, makes difficulty of processing larger.
Summary of the invention
The object of this invention is to provide the very big gas plasma process of a kind of Modular electrical containing micro-structural silicon carbide sealed ring method, in order to solve the difficult processing problems of silicon carbide sealed ring class part.
Described object is realized by following scheme: the very big gas plasma process of described a kind of Modular electrical is containing micro-structural silicon carbide sealed ring method, and its step method is:
Step one: the insulation of the upper surface of disc-shaped electrode frame is connected in the vertical motion work rotating shaft of gantry processor bed, the upper surface of disc-shaped electrode frame is provided with the installing hole of multiple slice-shaped electrode module, when slice-shaped electrode module is arranged on the installing hole on disc-shaped electrode frame, the diameter place straight line conllinear of slice-shaped electrode module and disc-shaped electrode frame, selects the number of slice-shaped electrode module according to the requirement of silicon carbide sealed ring class part micro-structural face to be processed type; Every plate sheet shape electrode module is made all to be connected the anode as atmospheric pressure plasma with the output of radio-frequency power supply by disc-shaped electrode frame; Multiple ventholes on disc-shaped electrode frame all pass through the gas port at disc-shaped electrode frame center, tracheae is communicated with the air guide of hybrid plasma source of the gas, and the port of export of each venthole on disc-shaped electrode frame is separately positioned near every plate sheet shape electrode module; The design principle of described slice-shaped electrode module is: the length range of plasma electrode is 2mm to 100mm according to semidiameter inside and outside silicon carbide sealed ring class part to be processed, and the width range of plasma electrode requires to be less than 1/10th of the inner ring wavelength to be processed of silicon carbide sealed ring class part to be processed;
Step 2: be installed on ground electrode by silicon carbide sealed ring class part to be processed, ground electrode is fixed on the workbench of gantry processor bed; Using the negative electrode of ground electrode ground connection as atmospheric pressure plasma; Gantry processor bed is arranged in airtight work chamber;
Step 3: the revolution axial line of disc-shaped electrode frame overlaps with the axial line of silicon carbide sealed ring class part to be processed, make the lower surface of every plate sheet shape electrode module all near the work surface of silicon carbide sealed ring class part to be processed, and make all to keep certain discharging gap between them, discharging gap scope is 1mm-5mm;
Step 4: preheating radio-frequency power supply, preheating time is 5-10 minute; Then hybrid plasma source of the gas is opened, hybrid plasma source of the gas comprises reacting gas, atmosphere plasma excited gas and assist gas, make the flow of atmosphere plasma excited gas be 1 liter/min ~ 40 liters/min, the flow-rate ratio of reacting gas and atmosphere plasma excited gas is 1: 10 ~ 1: 1000; The flow-rate ratio of assist gas and reacting gas is 1: 10 ~ 1: 1;
Step 5: be full of atmosphere plasma excited gas in the region between every plate sheet shape electrode module and the work surface of silicon carbide sealed ring class part to be processed, after the mist of reacting gas and assist gas, start radio-frequency power supply, progressively increase the power of radio-frequency power supply, power is made to reach 100W-400W, the reflection power simultaneously controlling radio-frequency power supply is zero, pass into mist continually and steadily in the process of radio-frequency power supply work, the region of discharge between the work surface of all slice-shaped electrode modules and silicon carbide sealed ring class part to be processed is made all to produce stable plasma discharge, start the axis of rotation of gantry processor bed, disc-shaped electrode frame is made to do gyration, thus drive the wraparound of all slice-shaped electrode modules to turn axial line to do gyration,
Step 6: according to the requirement of removal amount, controls the movement locus of all slice-shaped electrode modules and the residence time at piece surface, processes with the atmosphere plasma of above-mentioned generation to piece surface;
Step 7: to be processed complete after, close the power supply of radio-frequency power supply, close hybrid plasma source of the gas, stop the axis of rotation of gantry processor bed, take out silicon carbide sealed ring class part to be processed, the degree of depth is removed to processing and measures, to judge whether to reach processing request.
The present invention can to those surface requirements higher, difficulty of processing is larger, the sealing lopps piece surface that needs multiple operation just can complete processing carries out removing greatly first uniformly, the little removal of then local figuration, the high accuracy finally etching micro-structural, high efficiency processing.
The present invention compared with prior art also has following advantages:
1. plasma electrically electrode structure is simple, and electrode is that common metal is made, and manufacture simple, atmosphere plasma process is very little to the damage of electrode, and therefore process is stablized controlled, and crudy uniformity is good, and expense is low;
2. this method is for micro-structure surface, utilizes the finished surface of plasma electrode, calculates residence time, only needs the gyration in a direction just can realize the processing of micro-structural, algorithm and numerical control process simple;
3. the generation of plasma realizes under open atmospheric conditions, avoids and adopt vacuum reaction container, greatly reduce use cost.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention;
Fig. 2 is disc-shaped electrode frame 1 in Fig. 1, slice-shaped electrode module 1-1 and silicon carbide sealed ring class part 4 relative position structural representation to be processed;
Fig. 3 is the plan structure schematic diagram of Fig. 2.
Detailed description of the invention
Detailed description of the invention one: shown in composition graphs 1, Fig. 2, Fig. 3, its step method is:
Step one: the insulation of the upper surface of disc-shaped electrode frame 1 is connected on the vertical motion work rotating shaft 2-1 of gantry processor bed 2, the upper surface of disc-shaped electrode frame 1 is provided with the installing hole 1-4 of multiple slice-shaped electrode module 1-1, when being arranged on the installing hole 1-4 on disc-shaped electrode frame 1 as slice-shaped electrode module 1-1, the diameter place straight line conllinear of slice-shaped electrode module 1-1 and disc-shaped electrode frame 1, selects the number of slice-shaped electrode module 1-1 according to the requirement of silicon carbide sealed ring class part 4 micro-structural face to be processed type; Every plate sheet shape electrode module 1-1 is made all to be connected the anode as atmospheric pressure plasma with the output of radio-frequency power supply 3 by disc-shaped electrode frame 1; Gas port 1-3, tracheae 6-1 that multiple venthole 1-2 on disc-shaped electrode frame 1 pass through disc-shaped electrode frame 1 center are communicated with hybrid plasma source of the gas 6 air guide, and the port of export of each venthole 1-2 on disc-shaped electrode frame 1 is separately positioned near every plate sheet shape electrode module 1-1;
Step 2: be installed on ground electrode 2-3 by silicon carbide sealed ring class part 4 to be processed, ground electrode 2-3 is fixed on the workbench 2-2 of gantry processor bed 2; Using the negative electrode of ground electrode 2-3 ground connection as atmospheric pressure plasma; Gantry processor bed 2 is arranged in airtight work chamber 5;
Step 3: the revolution axial line of disc-shaped electrode frame 1 overlaps with the axial line of silicon carbide sealed ring class part 4 to be processed, make the lower surface of every plate sheet shape electrode module 1-1 all near the work surface of silicon carbide sealed ring class part 4 to be processed, and make all to keep certain discharging gap between them, discharging gap scope is 1mm-5mm;
Step 4: preheating radio-frequency power supply 3, preheating time is 5-10 minute; Then hybrid plasma source of the gas 6 is opened, hybrid plasma source of the gas 6 comprises reacting gas, atmosphere plasma excited gas and assist gas, make the flow of atmosphere plasma excited gas be 1 liter/min ~ 40 liters/min, the flow-rate ratio of reacting gas and atmosphere plasma excited gas is 1: 10 ~ 1: 1000; The flow-rate ratio of assist gas and reacting gas is 1: 10 ~ 1: 1;
Step 5: be full of atmosphere plasma excited gas in the region between every plate sheet shape electrode module 1-1 and the work surface of silicon carbide sealed ring class part 4 to be processed, after the mist of reacting gas and assist gas, start radio-frequency power supply 3, progressively increase the power of radio-frequency power supply 3, power is made to reach 100W-400W, the reflection power simultaneously controlling radio-frequency power supply 3 is zero, pass into mist continually and steadily in the process that radio-frequency power supply 3 works, the region of discharge between the work surface of all slice-shaped electrode module 1-1 and silicon carbide sealed ring class part 4 to be processed is made all to produce stable plasma discharge, the rotating shaft 2-1 starting gantry processor bed 2 rotates, disc-shaped electrode frame 1 is made to do gyration, thus drive all slice-shaped electrode module 1-1 wraparound to turn axial line to do gyration,
Step 6: according to the requirement of removal amount, controls all movement locus of slice-shaped electrode module 1-1 and the residence time at piece surface, processes with the atmosphere plasma of above-mentioned generation to piece surface;
Step 7: to be processed complete after, close the power supply of radio-frequency power supply 3, close hybrid plasma source of the gas 6, the rotating shaft 2-1 of gantry processor bed 2 is stopped to rotate, take out silicon carbide sealed ring class part 4 to be processed, the degree of depth is removed to processing and measures, to judge whether to reach processing request.
The material of described slice-shaped electrode module 1-1 is aluminium.The lower finished surface of described slice-shaped electrode module 1-1 can be designed to plane, interior inclined ladder shape or outer inclined ladder shape.
Described gantry processor bed 2 is planer-type milling machine or metal-planing machine.
The frequency of described radio-frequency power supply 3 is 13.56MHz or 27.12MHz, and peak power is 2KW.
Described hybrid plasma source of the gas 6 is ternary gas hybrid system, and gas supply flow is 1-100L/min.
Atmosphere plasma excited gas in described hybrid plasma source of the gas 6 is helium or argon gas; Reacting gas is sulfur hexafluoride, carbon tetrafluoride or Nitrogen trifluoride; Assist gas is oxygen, hydrogen or nitrogen.
Operation principle: connect the anode of slice-shaped electrode module 1-1 as atmospheric pressure plasma by radio-frequency power supply 3 output, part ground electrode ground connection is as the ground electrode of atmospheric pressure plasma, the gas of the generation plasma that can be excited provided by hybrid plasma source of the gas 6 is full of the gap between slice-shaped electrode module 1-1 and part, output electric energy is provided by radio-frequency power supply 3, plasma is produced at the discharging gap of slice-shaped electrode module 1-1 and silicon carbide sealed ring class part 4 to be processed, simultaneous reactions gas is excited, there is chemical reaction in the surface producing the atom and silicon carbide sealed ring class part 4 to be processed with reactivity, generate volatile product and by the slice-shaped electrode band that rotates from piece surface, realize the not damaged rapid processing to silicon carbide sealed ring class part thus.
Carbon tetrafluoride is under the effect of plasma, ionize, produce the active F atom of excitation state, the active F atom of excitation state and the sealing ring parts generation chemical reaction of carbofrax material, generate volatile products, very successfully from piece surface volatilization, thus the atom level removal of material can be realized, final generation super-smooth surface, and new damage layer can not be produced at piece surface;
SiC+4O→SiO
2+CO
2↑
SiO
2+4F→SiF4+O
2↑。
The design principle of described slice-shaped electrode module 1-1: the length range of plasma electrode is that 2mm to 100mm is optional according to semidiameter inside and outside silicon carbide sealed ring class part 4 to be processed.Plasma electrode width range is determined by the wavelength of micro-structural to be processed, about remove 1/2nd of the halfwidth of function for unit due to electrode width, and in order to ensure the accuracy of processing, require that the halfwidth that function is removed by unit is less than 1/5th of wavelength to be processed, therefore the width range of electrode requires to be less than 1/10th of the inner ring wavelength to be processed of silicon carbide sealed ring class part 4 to be processed, and suggested range is 0.5mm to 2mm.
Claims (3)
1. the very big gas plasma process of Modular electrical is containing micro-structural silicon carbide sealed ring method, it is characterized in that comprising the steps:
Step one: the insulation of the upper surface of disc-shaped electrode frame (1) is connected in the vertical motion work rotating shaft (2-1) of gantry processor bed (2), the upper surface of disc-shaped electrode frame (1) is provided with the installing hole (1-4) of multiple slice-shaped electrode module (1-1), when being arranged on installing hole (1-4) on disc-shaped electrode frame (1) when slice-shaped electrode module (1-1), the diameter place straight line conllinear of slice-shaped electrode module (1-1) and disc-shaped electrode frame (1), the number of slice-shaped electrode module (1-1) is selected according to the requirement of silicon carbide sealed ring class part (4) micro-structural face to be processed type, make every plate sheet shape electrode module (1-1) all pass through disc-shaped electrode frame (1) and be connected anode as atmospheric pressure plasma with the output of radio-frequency power supply (3), multiple ventholes (1-2) on disc-shaped electrode frame (1) all pass through the gas port (1-3) at disc-shaped electrode frame (1) center, tracheae (6-1) is communicated with hybrid plasma source of the gas (6) air guide, and the port of export of each venthole (1-2) on disc-shaped electrode frame (1) is separately positioned near every plate sheet shape electrode module (1-1), the design principle of described slice-shaped electrode module (1-1) is: the length range of plasma electrode is 2mm to 100mm according to the inside and outside semidiameter of silicon carbide sealed ring class part (4) to be processed, and the width range of plasma electrode requires to be less than 1/10th of the inner ring wavelength to be processed of silicon carbide sealed ring class part (4) to be processed,
Step 2: silicon carbide sealed ring class part (4) to be processed is installed on ground electrode (2-3), ground electrode (2-3) is fixed on the workbench (2-2) of gantry processor bed (2); Using the negative electrode of ground electrode (2-3) ground connection as atmospheric pressure plasma; Gantry processor bed (2) is arranged in airtight work chamber (5);
Step 3: the revolution axial line of disc-shaped electrode frame (1) overlaps with the axial line of silicon carbide sealed ring class part (4) to be processed, make the lower surface of every plate sheet shape electrode module (1-1) all near the work surface of silicon carbide sealed ring class part (4) to be processed, and make all to keep certain discharging gap between them, discharging gap scope is 1mm-5mm;
Step 4: preheating radio-frequency power supply (3), preheating time is 5-10 minute; Then hybrid plasma source of the gas (6) is opened, hybrid plasma source of the gas (6) comprises reacting gas, atmosphere plasma excited gas and assist gas, make the flow of atmosphere plasma excited gas be 1 liter/min ~ 40 liters/min, the flow-rate ratio of reacting gas and atmosphere plasma excited gas is 1: 10 ~ 1: 1000; The flow-rate ratio of assist gas and reacting gas is 1: 10 ~ 1: 1;
Step 5: be full of atmosphere plasma excited gas in the region between every plate sheet shape electrode module (1-1) and the work surface of silicon carbide sealed ring class part (4) to be processed, after the mist of reacting gas and assist gas, start radio-frequency power supply (3), progressively increase the power of radio-frequency power supply (3), power is made to reach 100W-400W, the reflection power simultaneously controlling radio-frequency power supply (3) is zero, pass into mist continually and steadily in the process that radio-frequency power supply (3) works, the region of discharge between the work surface of all slice-shaped electrode modules (1-1) and silicon carbide sealed ring class part (4) to be processed is made all to produce stable plasma discharge, the rotating shaft (2-1) starting gantry processor bed (2) is rotated, disc-shaped electrode frame (1) is made to do gyration, thus drive the wraparound of all slice-shaped electrode modules (1-1) to turn axial line to do gyration,
Step 6: according to the requirement of removal amount, controls all movement locus of slice-shaped electrode module (1-1) and the residence time at piece surface, processes with the atmosphere plasma of above-mentioned generation to piece surface;
Step 7: to be processed complete after, close the power supply of radio-frequency power supply (3), close hybrid plasma source of the gas (6), the rotating shaft (2-1) of gantry processor bed (2) is stopped to rotate, take out silicon carbide sealed ring class part (4) to be processed, remove the degree of depth to processing to measure, to judge whether to reach processing request.
2. the very big gas plasma process of Modular electrical according to claim 1 is containing micro-structural silicon carbide sealed ring method, it is characterized in that the material of described slice-shaped electrode module (1-1) is aluminium.
3. the very big gas plasma process of Modular electrical according to claim 1 is containing micro-structural silicon carbide sealed ring method, it is characterized in that the atmosphere plasma excited gas in described hybrid plasma source of the gas (6) is helium or argon gas; Reacting gas is sulfur hexafluoride, carbon tetrafluoride or Nitrogen trifluoride; Assist gas is oxygen, hydrogen or nitrogen.
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| JPS52115488A (en) * | 1976-03-25 | 1977-09-28 | Mitsubishi Heavy Ind Ltd | Plasma cutting process |
| JPH10337699A (en) * | 1997-06-04 | 1998-12-22 | Canon Inc | Drilling work method of wiring board |
| US7141757B2 (en) * | 2000-03-17 | 2006-11-28 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent |
| CN101579821B (en) * | 2009-03-24 | 2011-02-16 | 大连机床集团有限责任公司 | Exchangeable workbench structure for large-sized gantry machine |
| CN101596641B (en) * | 2009-06-30 | 2011-01-05 | 哈尔滨工业大学 | Method for chemical finishing of surface defect of diamond cutter by atmosphere low-temperature plasma |
| CN101659568B (en) * | 2009-09-23 | 2012-06-06 | 哈尔滨工业大学 | Atmospheric plasma chemical processing method of WC and SiC optical molding molds |
| CN102744652B (en) * | 2012-07-19 | 2015-05-13 | 哈尔滨工业大学 | Device and method for machining large-area plane optical element |
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