CN102730945A - Large-area contact type machining device for fused quartz by plasma discharge machining - Google Patents
Large-area contact type machining device for fused quartz by plasma discharge machining Download PDFInfo
- Publication number
- CN102730945A CN102730945A CN2012102486551A CN201210248655A CN102730945A CN 102730945 A CN102730945 A CN 102730945A CN 2012102486551 A CN2012102486551 A CN 2012102486551A CN 201210248655 A CN201210248655 A CN 201210248655A CN 102730945 A CN102730945 A CN 102730945A
- Authority
- CN
- China
- Prior art keywords
- plate
- gas
- electrode
- baffle
- flow meter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Plasma Technology (AREA)
Abstract
The invention discloses a large-area contact type machining device for fused quartz by plasma discharge machining, relates to a plasma machining device, and aims at solving the problems of the relatively low activity and low removal rate of reaction ions due to a high electrode temperature and a short machining time during the present plasma machining process. According to the invention, the upper end surface of an air guide plate and the upper end surface of a workpiece clamping plate on an end part are located in the same horizontal plane; a moulding electrode is arranged above a workpiece groove; a discharge space between two electrodes is formed on the lower end surface of the moulding electrode and the upper end surface of the workpiece groove; a cavity between an upper flow guide body and a lower flow guide body is a gas guide cavity; gas inlet holes are formed on the end surfaces of the gas inlet ends of the upper flow guide body and the lower flow guide body, and the two gas inlet holes are communicated with a gas mixing box; a helium gas cylinder, a carbon tetrafluoride gas cylinder and an oxygen cylinder are connected with the gas mixing box via a helium flow meter, a tetrafluoride flow meter and an oxygen flow meter respectively; a water pump is connected with a lower cooling channel and an upper cooling channel; and a radiofrequency power supply is connected with a high electrode and a base plate. The large-area contact type machining device disclosed by the invention is used for plasma machining.
Description
Technical field
The present invention relates to the plasma arc processing apparatus under a kind of normal atmosphere, be specifically related to a kind of device that carries out large area plasma processing fused quartz through radio-frequency power supply.
Background technology
Melting quartz is the non-crystalline state (vitreous state) of silicon oxide; Be typical glass; Be mainly used in industries such as precision casting, glass-ceramic, refractory materials and electronic apparatus; The fused quartz material is stable because of its chemical property, pass through that ultraviolet property is good, good uniformity and radiation resistance are good, is widely used in superlaser window, aerospace, microelectronics and other optical fields.At present, because the characteristic of fused quartz is in addition to the high request of precision element, the big area working (machining) efficiency is lower.Working method to high precision fused quartz surface is divided into two big types, grinds and polishing.The working (machining) efficiency of grinding is higher, but can bring surface and the damage of inferior damaged surface layer usually, and surface quality is undesirable; Though polishing can obtain surface quality preferably, for bigbore optical element, its process-cycle is long, efficient is low.Therefore, for the processing of the higher optical mirror slip of surface requirements,, adopt and grind the method that the face type of removing is greatly processed, the surface quality finishing is carried out in polishing then earlier for improving working (machining) efficiency.Along with the development of optical technology, plasma processing method under the vacuum has been proposed, but because the higher appointed condition of plasma process Technology Need under the vacuum, cost is high, so plasma process obtains people's attention under the normal atmosphere.
Be divided into jet and contact processing based on the plasma process under the normal atmosphere; Jet is promptly gone out by the plasma jet that produces in anode and the negative electrode; Act on workpiece surface and process, contact is that workpiece directly places the surface working of carrying out workpiece between negative electrode and the anode.Jet is processed with and is beneficial to the into finishing among a small circle of surface quality and face type, but because jet causes the active relatively low of reactive ion, so clearance is also lower; The plasma body that contact processing produces directly acts on workpiece surface, keeps the activity of reaction of atomic in the plasma body, improves clearance, but for the ability of surface type and surface quality a little less than.In addition, generally adopt small-bore processing for the polishing of macrotype optical mirror sheet at present, long for the large-area optical element processing process-cycle, efficient is low.
Summary of the invention
The electrode temperature that the objective of the invention is for solving in the existing PLASMA PROCESSING is high; Process period is short; Cause the active relatively low of reactive ion, the problem that clearance is low provides a kind of big area contact type plasma body electrodischarge machining(E.D.M.) fused quartz processing unit (plant).
Big area contact type plasma body electrodischarge machining(E.D.M.) fused quartz processing unit (plant) of the present invention comprises radio-frequency power supply, high electrode, shaped electrode, last baffle, following baffle, ground electrode, air deflector, end workpiece clamping plate, gas gas mixed box, helium gas cylinder, tetrafluoro-methane gas cylinder, oxygen cylinder, helium gas flow meter, tetrafluoro-methane under meter, oxygen flow meter, water pump, pin, two upper box lids, two side plates and two gas tubes, and ground electrode is made up of upper head plate and bed-plate, and upper head plate is arranged on the bed-plate along the longitudinal cenlerline of bed-plate; And upper head plate and bed-plate are processed one, and bed-plate upper surface and the vertical both sides that are positioned at upper head plate are the side plate installation place, and bed-plate upper surface and outlet side one side that is positioned at upper head plate are gas off-take; Bed-plate upper surface and inlet end one side that is positioned at upper head plate are uptake; End workpiece clamping plate are arranged on outlet side one side of upper head plate upper surface, and air deflector is arranged on the inlet end end of upper head plate, and the upper surface of the upper surface of air deflector and end workpiece clamping plate is in same horizontal plane; Between air deflector and the end workpiece clamping plate is the workpiece groove; Air deflector is provided with the first air guide inclined-plane towards uptake one side, and the first air guide inclined-plane is tilted to the outlet side by inlet end, and following baffle is arranged on the uptake place; Each side plate installation place is provided with a side plate; Shaped electrode is arranged on the top of workpiece groove, and the upper surface of the lower surface of shaped electrode and workpiece groove is provided with the spacing of discharging between two electrodes, and high electrode is arranged on the upper surface of shaped electrode; And high electrode is connected through pin with shaped electrode; High electrode is arranged in two upper box lids, and two upper box lids are symmetrical set with the axis of pin, and upper box lid is positioned at the top of air deflector; Another upper box lid is positioned at the top of gas off-take; Horizontal center line with discharge spacing between two electrodes on the upper box lid of air deflector top is that benchmark is arranged with the second air guide inclined-plane, and last baffle fastens with following baffle and is provided with, and the cavity between last baffle and the following baffle is the air guide chamber; The outlet side end face of last baffle is connected with upper box lid; The outlet side end face of following baffle is connected with air deflector, is equipped with air inlet port on the inlet end end face of last baffle and following baffle, and two air inlet ports are communicated with the gas gas mixed box through gas tube respectively; Helium gas flow meter, tetrafluoro-methane under meter that helium gas cylinder, tetrafluoro-methane gas cylinder and oxygen cylinder are corresponding with it respectively are connected with oxygen flow meter; Helium gas flow meter, tetrafluoro-methane under meter and oxygen flow meter all are connected with the gas gas mixed box, are provided with down the cooling channel in the upper head plate, are provided with the cooling channel in the high electrode; Water pump is connected with last cooling channel with following cooling channel through conduit respectively, and radio-frequency power supply is connected with bed-plate with high electrode through lead.
The present invention comprises following beneficial effect:
One, because the present invention is provided with cooling channel and following cooling channel respectively in the inside of high electrode and ground electrode; Realized the electrode cooling in the course of processing; Reduced the electrode temperature in the course of processing; Thereby can process for a long time, make that the activity of reactive ion is higher relatively, so clearance be improved.Shaped electrode among the present invention can be changed at any time, can realize the processing of workpiece face type and the finishing of workpiece surface quality through adjustment working process parameter and electrode shape, thereby take into account the effect that both reach efficient removal.Two, the present invention adds the water-cooled in man-hour through water pump, high electrode and ground electrode; Cooling segment is to have reduced shaped electrode and the workpiece temperature in the processing for the effect of workpiece process; Prevent that the too high shaped electrode that causes of temperature from damaging; Thereby prolonged the time of plasma discharge processing, reached better machining effect.Three, the present invention has realized under the normal atmosphere processing of big area contact type plasma body, has higher removal efficient than in the past small-bore and jet working method.
Description of drawings
Fig. 1 is the whole main sectional view of big area contact type plasma body electrodischarge machining(E.D.M.) fused quartz processing unit (plant) of the present invention; Fig. 2 is the A-A cross sectional view of Fig. 1; Fig. 3 is the structural perspective of ground electrode 7.
Embodiment
Embodiment one, combination Fig. 1～Fig. 3 explain this embodiment; The big area contact type plasma body electrodischarge machining(E.D.M.) fused quartz processing unit (plant) of this embodiment comprises radio-frequency power supply 1, high electrode 3, shaped electrode 4, goes up baffle 5, baffle 6, ground electrode 7, air deflector 8, end workpiece clamping plate 9, gas gas mixed box 10, helium gas cylinder 11, tetrafluoro-methane gas cylinder 12, oxygen cylinder 13, helium gas flow meter 14, tetrafluoro-methane under meter 15, oxygen flow meter 16, water pump 17,22, two upper box lids of pin 2, two side plates 18 and two gas tubes 25 down; Ground electrode 7 is made up of upper head plate 7-1 and bed-plate 7-2; Upper head plate 7-1 is arranged on the bed-plate 7-2 along the longitudinal cenlerline of bed-plate 7-2; And upper head plate 7-1 and bed-plate 7-2 process one; Bed-plate 7-2 upper surface and the vertical both sides that are positioned at upper head plate 7-1 are side plate installation place 7-3; Bed-plate 7-2 upper surface and outlet side one side that is positioned at upper head plate 7-1 are gas off-take 7-4; Bed-plate 7-2 upper surface and inlet end one side that is positioned at upper head plate 7-1 are uptake 7-5, and end workpiece clamping plate 9 are arranged on outlet side one side of upper head plate 7-1 upper surface, and air deflector 8 is arranged on the inlet end end of upper head plate 7-1; The upper surface of the upper surface of air deflector 8 and end workpiece clamping plate 9 is in same horizontal plane; Between air deflector 8 and the end workpiece clamping plate 9 is workpiece groove 21, and air deflector 8 is provided with the first air guide inclined-plane 8-1 towards uptake 7-5 one side, and the first air guide inclined-plane 8-1 is tilted to the outlet side by inlet end; Following baffle 6 is arranged on uptake 7-5 place; Each side plate installation place 7-3 is provided with a side plate 18, and shaped electrode 4 is arranged on the top of workpiece groove 21, and shaped electrode 4 can be changed difform electrode according to the shape of workpiece.The upper surface of the lower surface of shaped electrode 4 and workpiece groove 21 is provided with discharge spacing h between two electrodes; High electrode 3 is arranged on the upper surface of shaped electrode 4, and high electrode 3 is connected through pin 22 with shaped electrode 4, and high electrode 3 is arranged in two upper box lids 2; Two upper box lids 2 are symmetrical set with the axis of pin 22; And a upper box lid 2 is positioned at the top of air deflector 8, and another upper box lid 2 is positioned at the top of gas off-take 7-4, and the horizontal center line with discharge spacing h between two electrodes on the upper box lid 2 of air deflector 8 tops is that benchmark is arranged with the second air guide inclined-plane 2-1; Last baffle 5 fastens with following baffle 6 and is provided with; Cavity between last baffle 5 and the following baffle 6 is air guide chamber 20, and the outlet side end face of last baffle 5 is connected with upper box lid 2, and the outlet side end face of following baffle 6 is connected with air deflector 8; Be equipped with air inlet port 24 on the inlet end end face of last baffle 5 and following baffle 6; Two air inlet ports 24 are communicated with gas gas mixed box 10 through gas tube 25 respectively, and the helium gas flow meter 14 that helium gas cylinder 11, tetrafluoro-methane gas cylinder 12 and oxygen cylinder 13 are corresponding with it respectively, tetrafluoro-methane under meter 15 and oxygen flow meter 16 are connected, and helium gas flow meter 14, tetrafluoro-methane under meter 15 and oxygen flow meter 16 all are connected with gas gas mixed box 10; Be provided with down cooling channel 7-1-1 in the upper head plate 7-1; Be provided with cooling channel 3-1 in the high electrode 3, water pump 17 is connected with last cooling channel 3-1 with following cooling channel 7-1-1 through conduit respectively, and radio-frequency power supply 1 is connected with bed-plate 7-2 with high electrode 3 through lead.
Radio-frequency power supply 1, high electrode 3, shaped electrode 4 and ground electrode 7 forming circuit parts; High electrode 3, ground electrode 7 and water pump 17 constitute cooling segment; Last baffle 5, baffle 6, air deflector 8, gas gas mixed box 10, helium gas cylinder 11, tetrafluoro-methane gas cylinder 12, oxygen cylinder 13, helium gas flow meter 14, tetrafluoro-methane under meter 15, oxygen flow meter 16, two upper box lids 2 and two gas tubes 25 constitute the air-flow parts down; Gas gas mixed box 10, helium gas cylinder 11, tetrafluoro-methane gas cylinder 12, oxygen cylinder 13, helium gas flow meter 14, tetrafluoro-methane under meter 15 and oxygen flow meter 16 constitute reaction unit.
Utilize this embodiment that workpiece is added and to realize two kinds of method processing man-hour: big clearance processing and finishing processing.
The big clearance processing of workpiece: through the control helium flow velocity of helium gas flow meter 14 low discharges; Control tetrafluoro-methane flow velocity through tetrafluoro-methane under meter 15 big flows; The flow control of oxygen flow meter 16 is between helium flow velocity and tetrafluoro-methane flow velocity; After gas gas mixed box 10 carries out full and uniform mixing, be reactant gases, its reaction equation is: 4CF
4+ Si → 2C
2F
6+ SiF
4, reactant gases gets in the air guide chamber 20 through gas tube 25, air inlet port 24, gets into discharge spacing h between two electrodes through the first air guide inclined-plane 8-1 and the second air guide inclined-plane 2-1, realizes that workpiece adds the large area plasma contact in man-hour, to reach big clearance effect.
The finishing processing of workpiece (i.e. the little removal of surface reparation): through the control helium flow velocity of helium gas flow meter 14 big flows; Control tetrafluoro-methane flow velocity through tetrafluoro-methane under meter 15 low discharges; The flow control of oxygen flow meter 16 is between helium flow velocity and tetrafluoro-methane flow velocity; After gas gas mixed box 10 carries out full and uniform mixing, be reactant gases, its reaction equation is: 4CF
4+ Si → 2C
2F
6+ SiF
4Reactant gases gets in the air guide chamber 20 through gas tube 25, air inlet port 24; Get into discharge spacing h between two electrodes through the first air guide inclined-plane 8-1 and the second air guide inclined-plane 2-1, realize that the workpiece finishing adds the large area plasma contact in man-hour, to reach the little clearance effect that repair on the surface.
Embodiment two, combination Fig. 2 explain this embodiment, and discharge spacing h is 2mm～5mm between two electrodes of this embodiment.In this scope, can realize the plasma stability discharge.Other composition and annexation are identical with embodiment one.
Embodiment three, combination Fig. 2 explain this embodiment; This embodiment is different with embodiment one or two is that it also increases by two side workpiece clamping plate 19 are arranged; Two side workpiece clamping plate 19 longitudinal cenlerlines with upper head plate 7-1 are symmetricly set on the both sides of upper head plate 7-1 upper surface, and the upper surface of the upper surface of two side workpiece clamping plate 19 and end workpiece clamping plate 9 is in same horizontal plane.So be provided with, can prevent that workpiece from laterally moving in workpiece groove 21.More firm other composition of fixed position and annexation are identical with embodiment one or two.
Working process of the present invention: change shaped electrode 4 into needed type according to the needs of workpiece face type, equipment is installed after adjustment keeps stopping property, and the inspection circuit connects, and opening radio-frequency power supply 1 after errorless carries out preheating with the under meter power switch.Treat to open cooling pump 17 after the preheating; Open the switch of helium gas cylinder 11, tetrafluoro-methane gas cylinder 12 and oxygen cylinder 13; The flow of adjusting helium gas flow meter 14, tetrafluoro-methane under meter 15 and oxygen flow meter 16 simultaneously to required flow, treat that three kinds of gases reacts in gas gas mixed box 10 after, carry out system and switch on; After guaranteeing that the reactant gases flow velocity is stable; Get in the air guide chamber 20 through gas tube 25, air inlet port 24, get into discharge spacing h place between two electrodes through the first air guide inclined-plane 8-1 and the second air guide inclined-plane 2-1, this moment, reaction was carried out; After the end to be processed, reduce radio-frequency power supply power, close radio-frequency power supply 1, close the switch of helium gas cylinder 11, tetrafluoro-methane gas cylinder 12 and oxygen cylinder 13, take out workpiece.
Claims (3)
1. big area contact type plasma body electrodischarge machining(E.D.M.) fused quartz processing unit (plant) is characterized in that: said device comprises radio-frequency power supply (1), high electrode (3), shaped electrode (4), goes up baffle (5), baffle (6), ground electrode (7), air deflector (8), end workpiece clamping plate (9), gas gas mixed box (10), helium gas cylinder (11), tetrafluoro-methane gas cylinder (12), oxygen cylinder (13), helium gas flow meter (14), tetrafluoro-methane under meter (15), oxygen flow meter (16), water pump (17), pin (22), two upper box lids (2), two side plates (18) and two gas tubes (25) down, and ground electrode (7) is made up of upper head plate (7-1) and bed-plate (7-2); Upper head plate (7-1) is arranged on the bed-plate (7-2) along the longitudinal cenlerline of bed-plate (7-2); And upper head plate (7-1) and bed-plate (7-2) are processed one, and bed-plate (7-2) end face and the vertical both sides that are positioned at upper head plate (7-1) are side plate installation place (7-3), and bed-plate (7-2) end face and outlet side one side that is positioned at upper head plate (7-1) are gas off-take (7-4); Bed-plate (7-2) end face and inlet end one side that is positioned at upper head plate (7-1) are uptake (7-5); End workpiece clamping plate (9) are arranged on outlet side one side of upper head plate (7-1) upper surface, and air deflector (8) is arranged on the inlet end end of upper head plate (7-1), and the upper surface of the upper surface of air deflector (8) and end workpiece clamping plate (9) is in same horizontal plane; Be workpiece groove (21) between air deflector (8) and the end workpiece clamping plate (9); Air deflector (8) is provided with the first air guide inclined-plane (8-1) towards uptake (7-5) side, and the first air guide inclined-plane (8-1) is tilted to the outlet side by inlet end, and following baffle (6) is arranged on uptake (7-5) and locates; Each side plate installation place (7-3) is provided with a side plate (18); Shaped electrode (4) is arranged on the top of workpiece groove (21), and the upper surface of the lower surface of shaped electrode (4) and workpiece groove (21) is provided with the spacing (h) of discharging between two electrodes, and high electrode (3) is arranged on the upper surface of shaped electrode (4); And high electrode (3) is connected through pin (22) with shaped electrode (4); High electrode (3) is arranged in two upper box lids (2), and two upper box lids (2) are symmetrical set with the axis of pin (22), and a upper box lid (2) is positioned at the top of air deflector (8); Another upper box lid (2) is positioned at the top of gas off-take (7-4); The horizontal center line that the upper box lid (2) of air deflector (8) top is gone up with the spacing (h) of discharging between two electrodes is that benchmark is arranged with the second air guide inclined-plane (2-1), and last baffle (5) fastens with following baffle (6) and is provided with, and the cavity between last baffle (5) and the following baffle (6) is air guide chamber (20); The outlet side end face of last baffle (5) is connected with upper box lid (2); The outlet side end face of following baffle (6) is connected with air deflector (8), is equipped with air inlet port (24) on the inlet end end face of last baffle (5) and following baffle (6), and two air inlet ports (24) are communicated with gas gas mixed box (10) through gas tube (25) respectively; The helium gas flow meter (14) that helium gas cylinder (11), tetrafluoro-methane gas cylinder (12) and oxygen cylinder (13) are corresponding with it respectively, tetrafluoro-methane under meter (15) and oxygen flow meter (16) are connected; Helium gas flow meter (14), tetrafluoro-methane under meter (15) and oxygen flow meter (16) all are connected with gas gas mixed box (10), are provided with down cooling channel (7-1-1) in the upper head plate (7-1), are provided with cooling channel (3-1) in the high electrode (3); Water pump (17) is connected with last cooling channel (3-1) with following cooling channel (7-1-1) through conduit respectively, and radio-frequency power supply (1) is connected with bed-plate (7-2) with high electrode (3) through lead.
2. according to the said big area contact type plasma of claim 1 body electrodischarge machining(E.D.M.) fused quartz processing unit (plant), it is characterized in that: the spacing of discharging between said two electrodes (h) is 2mm～5mm.
3. according to claim 1 or 2 said big area contact type plasma body electrodischarge machining(E.D.M.) fused quartz processing unit (plant)s; It is characterized in that: said device also comprises two side workpiece clamping plate (19); Two side workpiece clamping plate (19) are symmetricly set on the both sides of upper head plate (7-1) upper surface with the longitudinal cenlerline of upper head plate (7-1), and the upper surface of the upper surface of two side workpiece clamping plate (19) and end workpiece clamping plate (9) is in same horizontal plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210248655.1A CN102730945B (en) | 2012-07-18 | 2012-07-18 | Large-area contact type machining device for fused quartz by plasma discharge machining |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210248655.1A CN102730945B (en) | 2012-07-18 | 2012-07-18 | Large-area contact type machining device for fused quartz by plasma discharge machining |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102730945A true CN102730945A (en) | 2012-10-17 |
| CN102730945B CN102730945B (en) | 2014-08-06 |
Family
ID=46987347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210248655.1A Active CN102730945B (en) | 2012-07-18 | 2012-07-18 | Large-area contact type machining device for fused quartz by plasma discharge machining |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102730945B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103212774A (en) * | 2013-05-14 | 2013-07-24 | 哈尔滨工业大学 | Device for atmospheric plasma digital control processing of free curved surface optical parts |
| CN103213172A (en) * | 2013-05-14 | 2013-07-24 | 哈尔滨工业大学 | Device for water electrode atmospheric plasma processing large-caliber aspheric optical part |
| CN103227092A (en) * | 2013-05-14 | 2013-07-31 | 哈尔滨工业大学 | Atmosphere plasma processing method of free-form surface microstructure optical part |
| CN103236392A (en) * | 2013-05-14 | 2013-08-07 | 哈尔滨工业大学 | Method for processing rotary part by forming electrode air plasma |
| CN103236391A (en) * | 2013-05-14 | 2013-08-07 | 哈尔滨工业大学 | Device for processing rotary part by forming electrode air plasma |
| CN103264414A (en) * | 2013-05-14 | 2013-08-28 | 哈尔滨工业大学 | Device for processing silicon carbide sealing ring type part through atmosphere plasma |
| CN103273180A (en) * | 2013-05-14 | 2013-09-04 | 哈尔滨工业大学 | Atmosphere plasma body numerical control processing method of free-form surface optical element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61204877A (en) * | 1985-03-07 | 1986-09-10 | Mitsubishi Electric Corp | Working method for negative pressure floating head slider |
| EP0798405A2 (en) * | 1996-03-25 | 1997-10-01 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing semiconductor wafers |
| CN1864921A (en) * | 2006-06-14 | 2006-11-22 | 哈尔滨工业大学 | Capacitive coupling radio frequency normal pressure plasma torch for machining ultra-smooth surface |
-
2012
- 2012-07-18 CN CN201210248655.1A patent/CN102730945B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61204877A (en) * | 1985-03-07 | 1986-09-10 | Mitsubishi Electric Corp | Working method for negative pressure floating head slider |
| EP0798405A2 (en) * | 1996-03-25 | 1997-10-01 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing semiconductor wafers |
| US5942445A (en) * | 1996-03-25 | 1999-08-24 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing semiconductor wafers |
| CN1864921A (en) * | 2006-06-14 | 2006-11-22 | 哈尔滨工业大学 | Capacitive coupling radio frequency normal pressure plasma torch for machining ultra-smooth surface |
Non-Patent Citations (2)
| Title |
|---|
| 张巨帆等: "大气等离子体抛光技术在超光滑硅表面加工中的应用", 《光学精密工程》 * |
| 王东方等: "CF4/SF6反应气体对大气压等离子体温度的影响", 《航空精密制造技术》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103212774A (en) * | 2013-05-14 | 2013-07-24 | 哈尔滨工业大学 | Device for atmospheric plasma digital control processing of free curved surface optical parts |
| CN103213172A (en) * | 2013-05-14 | 2013-07-24 | 哈尔滨工业大学 | Device for water electrode atmospheric plasma processing large-caliber aspheric optical part |
| CN103227092A (en) * | 2013-05-14 | 2013-07-31 | 哈尔滨工业大学 | Atmosphere plasma processing method of free-form surface microstructure optical part |
| CN103236392A (en) * | 2013-05-14 | 2013-08-07 | 哈尔滨工业大学 | Method for processing rotary part by forming electrode air plasma |
| CN103236391A (en) * | 2013-05-14 | 2013-08-07 | 哈尔滨工业大学 | Device for processing rotary part by forming electrode air plasma |
| CN103264414A (en) * | 2013-05-14 | 2013-08-28 | 哈尔滨工业大学 | Device for processing silicon carbide sealing ring type part through atmosphere plasma |
| CN103273180A (en) * | 2013-05-14 | 2013-09-04 | 哈尔滨工业大学 | Atmosphere plasma body numerical control processing method of free-form surface optical element |
| CN103264414B (en) * | 2013-05-14 | 2015-04-01 | 哈尔滨工业大学 | Device for processing silicon carbide sealing ring type part through atmosphere plasma |
| CN103236392B (en) * | 2013-05-14 | 2015-04-22 | 哈尔滨工业大学 | Method for processing rotary part by forming electrode air plasma |
| CN103212774B (en) * | 2013-05-14 | 2015-07-01 | 哈尔滨工业大学 | Device for atmospheric plasma digital control processing of free curved surface optical parts |
| CN103273180B (en) * | 2013-05-14 | 2015-11-25 | 哈尔滨工业大学 | The atmosphere plasma numerical-control processing method of freeform optics part |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102730945B (en) | 2014-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102730945B (en) | Large-area contact type machining device for fused quartz by plasma discharge machining | |
| CN102744652B (en) | Device and method for machining large-area plane optical element | |
| CN100462199C (en) | Method of polishing normal pressure plasma | |
| CN103781587A (en) | Systems and methods for producing silicon slim rods | |
| CN101681799A (en) | Erosion resistance enhanced quartz used in plasma etch chamber | |
| CN102503177A (en) | Plasma processing device used for super-smooth surface | |
| EP2759520A1 (en) | Device for producing polycrystal silicon and method for producing polycrystal silicon | |
| CN113182644A (en) | Fixture for relieving deformation of electric arc additive manufacturing component and process method | |
| CN101661861B (en) | Hollow anode ion source used for ultra high vacuum system | |
| CN113387550A (en) | Method for improving uniformity of quartz glass | |
| CN110004484B (en) | SiC single crystal plasma electrochemical polishing device and polishing method thereof | |
| CN105886989B (en) | Prepare the device of welding and its prepare the method for welding | |
| CN101311657A (en) | Polycrystalline silicon reducing furnace water-cooling double glass viewing mirror | |
| CN103101912B (en) | Polycrystalline silicon preparation method | |
| CN103231297A (en) | Method for processing atmosphere plasma of large-diameter optical part | |
| CN101265580A (en) | Pre-conditioning a sputtering target prior to sputtering | |
| CN113564558B (en) | Chemical vapor deposition and annealing continuous processing device, method and application | |
| TW201734396A (en) | Gas flow control for millisecond anneal system | |
| CN110549250B (en) | Wafer manufacturing tool and use method thereof | |
| CN102184840B (en) | Method for manufacturing dual-layer quartz cylinder | |
| CN210065890U (en) | Radio frequency plasma oxidation nitridation equipment | |
| CN103253703A (en) | Preparation method and equipment of high-purity arsenic oxide | |
| CN104752258A (en) | Cleaning method for plasma-processing chamber | |
| CN102174691A (en) | Quick base material temperature raising and reducing technology in large-scale production of thin film photovoltaic battery | |
| CN107200464A (en) | Crackle fuser and its method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |