CN110004484B - SiC single crystal plasma electrochemical polishing device and polishing method thereof - Google Patents

SiC single crystal plasma electrochemical polishing device and polishing method thereof Download PDF

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Publication number
CN110004484B
CN110004484B CN201910321122.3A CN201910321122A CN110004484B CN 110004484 B CN110004484 B CN 110004484B CN 201910321122 A CN201910321122 A CN 201910321122A CN 110004484 B CN110004484 B CN 110004484B
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electrode
single crystal
sic single
polishing
rotary
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CN110004484A (en
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李淑娟
尹新城
李志鹏
赵智渊
贾祯
蒋百铃
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Xian University of Technology
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Xian University of Technology
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating

Abstract

The invention discloses a SiC single crystal plasma electrochemical polishing device which comprises a machine tool table, wherein an electrolyte tank, a pulse power supply and an electrode group are fixedly connected to the surface of the machine tool table, the electrode group comprises a stainless steel electrode and a SiC single crystal electrode, the stainless steel electrode is arranged on a rotatable electrode frame, the SiC single crystal electrode to be processed is arranged on a rotatable holder, water-based electrolyte is conveyed to the surface of the stainless steel electrode by the electrolyte tank through a guide pipe, and the pulse power supply is connected with the stainless steel electrode and the SiC single crystal electrode through a lead. The invention also discloses a polishing method of the polishing device. The polishing device disclosed by the invention solves the problems that the SiC single crystal is easy to generate surface and sub-surface damage and the polishing efficiency is low in the prior polishing technology, and has the advantages of simple structure and easiness in operation.

Description

SiC single crystal plasma electrochemical polishing device and polishing method thereof
Technical Field
The invention belongs to the technical field of ultra-precision processing equipment for a semiconductor hard and brittle material, and particularly relates to a SiC single crystal plasma electrochemical polishing device and a polishing method of the polishing device.
Background
With the development of electronic and communication technologies, SiC single crystals are applied in large scale in high-power electronic devices and IC industries, and especially higher requirements are put forward on polishing of large-diameter ultrathin SiC single crystals. Due to the characteristics of high hardness and brittleness of SiC, the precision polishing process of the large-diameter ultrathin SiC single crystal wafer becomes a bottleneck in the processing and manufacturing process of the substrate of the electronic device, and the surface quality of the polished SiC single crystal wafer has important influence on the performance and the service life of the device.
The polishing of the SiC single crystal comprises mechanical polishing, chemical mechanical polishing, plasma-assisted polishing and the like according to the type of a polishing method, and has the defects of surface damage and subsurface damage, easy occurrence of chemical residues, difficult subsequent removal, low material removal rate, long polishing time and the like. The plasma electrochemical polishing method is that a large amount of oxygen plasmas are generated on the surface of a workpiece material in a plasma electrochemical mode, the oxygen plasmas react with the surface of the workpiece after ionization to generate a softer thinning layer, and then soft abrasive particles are used for removing, so that the nano-scale polishing of the material can be realized, and the higher material removal rate and the surface quality are kept. In water-based electrolyte, SiC single crystal is used as an anode, stainless steel is used as a cathode, pulse voltage is more than 300V, and when the cut-off frequency is 100kHz, electrolysis of water on the Si surface of the SiC single crystal generates O2Rapidly attaching a dense oxygen film on the surface of the anode, and forming OH near the anode-After electron loss, the electron impacts on O2Is ionized into O under the action of strong electric field2-(oxygen plasma) oxidizing Si in an activated state on the SiC surface layer to SiO2Is attached to the SiC surface in the form of a thinning film and then passes through a soft abrasive CeO2Removed for polishing. Therefore, a SiC single crystal plasma electrochemical polishing device is needed to realize SiC surface modification and remove the sparse layer, and improve polishing efficiency and polishing quality.
Disclosure of Invention
The invention aims to provide a SiC single crystal plasma electrochemical polishing device, which solves the problems that SiC single crystals in the existing polishing device are easy to generate surface and sub-surface damage and the polishing efficiency is low.
Another object of the invention is to provide a polishing method of the SiC single crystal plasma electrochemical polishing device.
The technical scheme adopted by the invention is that the SiC single crystal plasma electrochemical polishing device comprises a machine tool table, wherein an electrolyte tank, a pulse power supply and an electrode group are fixedly connected to the surface of the machine tool table, the electrode group comprises a stainless steel electrode and a SiC single crystal electrode, the stainless steel electrode is arranged on a rotatable electrode frame, the electrode frame is connected with a rotary workbench, the SiC single crystal electrode to be processed is arranged on a rotatable clamp and is positioned right above the rotary workbench, a polishing pad is bonded to the surface of the rotary workbench, water-based electrolyte is conveyed to the surface of the polishing pad through a guide pipe by the electrolyte tank, and the pulse power supply is connected with the stainless steel electrode and the SiC single crystal electrode through a lead.
The electrode group comprises a support fixedly connected to the center of the surface of a machine tool table, a rotary table is installed at the upper end of the support, a plurality of spaced electrode holes are formed in the surface of the rotary table in a penetrating mode, electric brushes are fixedly installed in the center of the bottom surface of the interior of the support and connected with an electrode frame through ball screws, a plurality of electrode rods are fixedly connected to the surface of the electrode frame at intervals and used for installing stainless steel electrodes, each electrode rod corresponds to and is coaxial with the position of each electrode hole, the rotary support is installed on the surface of the machine tool table, SiC single crystal electrodes are fixed on the rotary support and comprise a clamp holder fixedly connected to the upper end of the rotary support, the clamp holder is located right above the rotary table and used for clamping SiC single crystals, and a.
The rotating directions of the rotary worktable and the rotary bracket are opposite.
One end of the guide pipe is provided with a nozzle which is positioned right above the polishing pad and close to the SiC single crystal electrode.
The other end of the conduit is connected with the electrolyte tank, a filter screen is arranged in the conduit at the joint, and the conduit is sequentially connected with a hydraulic pump, a flowmeter and a thermostat.
The periphery of the machine tool table is fixedly connected with a glass cover, and the electrolyte tank, the pulse power supply and the electrode group are positioned in the glass cover.
The upper part of the side wall of the glass cover is connected with an exhaust pipe.
The invention also provides a polishing method of the SiC single crystal plasma electrochemical polishing device, which comprises the following steps:
step 1, clamping the excircle of the SiC monocrystal by using a clamper, and adjusting a rotary worktable to a position where a polishing pad is contacted with a surface to be polished of the SiC monocrystal;
step 2, mounting the stainless steel electrode on an electrode rod of an electrode frame, and driving a ball screw to adjust the lifting height of the electrode frame through a motor so that the distance between the upper end surface of the stainless steel electrode and the upper surface of the polishing pad is 100 microns;
step 3, injecting a proper amount of water-based electrolyte into the electrolyte tank, spraying the water-based electrolyte to the vicinity of the contact surface of the SiC single crystal and the polishing pad through a guide pipe by a nozzle 10, and controlling the temperature of the water-based electrolyte by a thermostat; the rotary worktable and the clamper are respectively driven by a motor to do rotary motion, so that the surface of the polishing pad contacted with the SiC single crystal generates relative motion;
step 4, turning on and adjusting a pulse power supply to enable the voltage to be 300V and the switching-off frequency to be 100 kHz; the water-based electrolyte sprayed out from the nozzle is electrolyzed to generate oxygen plasma, SiC monocrystal Si atoms under the action of a strong electric field are activated to form a softer sparse layer, and the sparse layer is removed by polishing through a polishing pad, so that the polishing effect is achieved.
The SiC single crystal plasma electrochemical polishing device and the polishing method thereof have the advantages that the SiC single crystal is clamped on the clamp holder, the clamp holder is arranged on the rotating support and is driven to rotate by the motor and positioned above the rotating table, the polishing pad is fixedly connected to the rotating table, the surface openings of the polishing pad correspond to the stainless steel electrodes on the electrode frame one by one, the electrode frame is lifted and rotated under the action of the ball screw driven by the motor, and the SiC single crystal is polished under the action of the polishing pad due to the rotation of the clamp holder and the rotating table.
Drawings
FIG. 1 is a schematic structural view of a SiC single crystal plasma electrochemical polishing apparatus of the present invention;
FIG. 2 is a schematic diagram showing the operation of a SiC single crystal plasma electrochemical polishing apparatus according to the present invention;
fig. 3 is a top view a-a of the figure.
In the figure, 1, a machine tool table, 2, an electrolyte tank, 3, a water-based electrolyte, 4, a filter screen, 5, a hydraulic pump, 6, a flowmeter, 7, a thermostat, 8, a glass cover, 9, a guide pipe, 10, a nozzle, 11, a clamp, 12, SiC single crystal, 13, an exhaust pipe, 14, a polishing pad, 15, a rotary worktable, 16, a stainless steel electrode, 17, a pulse power supply, 18, an electrode frame and 19 are electric brushes.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The SiC single crystal plasma electrochemical polishing device comprises a machine tool table 1, wherein an electrolyte tank 2, a pulse power supply 17 and an electrode group are fixedly connected to the surface of the machine tool table 1, the electrode group comprises a stainless steel electrode 16 and a SiC single crystal electrode, the stainless steel electrode 16 is installed on a rotatable electrode frame 18, the electrode frame 18 is connected with a rotary workbench 15, the SiC single crystal electrode to be processed is installed on a rotatable clamp 11 and is positioned right above the rotary workbench 15, a polishing pad 14 is adhered to the surface of the rotary workbench 15, a water-based electrolyte 3 is conveyed to the surface of the polishing pad 14 by the electrolyte tank 2 through a guide pipe 9, and the pulse power supply 17 is connected with the stainless steel electrode 16 and the SiC single crystal electrode through a lead.
The electrode group comprises a support fixedly connected to the center of the surface of a machine tool table 1, a rotary workbench 15 is installed at the upper end of the support, a plurality of spaced electrode holes are formed in the surface of the rotary workbench 15 in a penetrating mode, an electric brush 19 is fixedly installed in the center of the bottom surface of the interior of the support, the electric brush 19 is connected with an electrode frame 18 through a ball screw, a plurality of electrode rods are fixedly connected to the surface of the electrode frame 18 at intervals and used for installing stainless steel electrodes 16, each electrode rod corresponds to and is coaxial with the position of each electrode hole, the rotary support is installed on the surface of the machine tool table 1, a SiC single crystal electrode is fixed on the rotary support, the SiC single crystal electrode comprises a clamp 11 fixedly connected to the upper end of the rotary support, the clamp 11 is located right above the rotary workbench 15 and used for.
As shown in fig. 3, the rotation directions of the rotary table 15 and the rotary support are opposite.
One end of the conduit 9 is provided with a nozzle 10, and the nozzle 10 is positioned right above the polishing pad 14 and near the SiC single crystal 12 for delivering the water-based electrolyte 3 to the surface of the polishing pad 14.
The other end of the guide pipe 9 is connected with the electrolyte tank 2, a filter screen 4 is arranged in the guide pipe 9 at the connection part and used for filtering impurities in the electrolyte, a hydraulic pump 5, a flowmeter 6 and a thermostat 7 are sequentially connected to the guide pipe 9, the hydraulic pump 5 is used for conveying the water-based electrolyte 3 from the electrolyte tank 2 and spraying the water-based electrolyte to the surface of the polishing pad 14, the flowmeter 6 is used for measuring the flow of the electrolyte, and the thermostat 7 can be used for adjusting the temperature of the electrolyte.
The periphery of the machine tool table 1 is fixedly connected with a glass cover 8, and the electrolyte tank 2, the pulse power supply 17 and the electrode group are positioned in the glass cover.
The upper part of the side wall of the glass cover 8 is connected with an exhaust pipe 13.
The pulse power supply 17 adopts a micro-arc oxidation electric control system, and the single-pulse power parameter adjustable range is as follows: voltage 0-700V, peak current 0-1500A, pulse width 30-200 mus.
Thermostat 7 employs a trypan quick electric heating faucet ZM-D1.
The invention relates to a polishing method of a SiC single crystal plasma electrochemical polishing device, which comprises the following steps:
step 1, clamping the excircle of the SiC single crystal 12 by using a clamper 11, and adjusting a rotary worktable 15 to a position where a polishing pad 14 is in contact with the surface to be polished of the SiC single crystal 12;
step 2, mounting the stainless steel electrode 16 on an electrode rod of an electrode frame 18, and driving a ball screw to adjust the lifting height of the electrode frame 18 through a motor, so that the distance between the upper end surface of the stainless steel electrode 16 and the upper surface of the polishing pad 14 is 100 microns;
step 3, injecting a proper amount of water-based electrolyte 3 into the electrolyte tank 2, spraying the water-based electrolyte 3 to the vicinity of the contact surface of the SiC monocrystal 12 and the polishing pad 14 through a guide pipe 9 and a nozzle 10, and controlling the temperature of the water-based electrolyte through a thermostat 7; the rotary worktable 15 and the clamper 11 are respectively driven by a motor to do rotary motion, so that the polishing pad 14 and the surface of the SiC single crystal 12 sheet which is contacted with the polishing pad generate relative motion;
step 4, turning on and adjusting the pulse power supply 17 to enable the voltage to be 300V and the switching-off frequency to be 100 kHz; the water-based electrolyte sprayed from the nozzle 10 is electrolyzed to generate oxygen plasma, SiC single crystal Si atoms under the action of a strong electric field are activated to form a softer sparse layer, and the sparse layer is removed by polishing through the polishing pad 14, so that the polishing effect is achieved.

Claims (8)

1. The SiC single crystal plasma electrochemical polishing device is characterized by comprising a machine tool table (1), the surface of the machine tool table (1) is fixedly connected with an electrolyte box (2), a pulse power supply (17) and an electrode group, the electrode group comprises a stainless steel electrode (16) and a SiC monocrystal electrode, the stainless steel electrode (16) is arranged on a rotatable electrode frame (18), the electrode frame (18) is connected with a rotary workbench (15), the SiC single crystal electrode to be processed is arranged on a rotatable clamper (11) and is positioned right above the rotary workbench (15), the surface of the rotary worktable (15) is adhered with a polishing pad (14), the electrolyte tank (2) conveys water-based electrolyte (3) to the surface of the polishing pad (14) through a conduit (9), the pulse power supply (17) is connected with the stainless steel electrode (16) and the SiC single crystal electrode through a lead.
2. A SiC single crystal plasma electrochemical polishing device according to claim 1, wherein the electrode group comprises a support fixedly connected to the center of the surface of the machine tool table (1), the rotary table (15) is mounted on the upper end of the support, a plurality of spaced electrode holes are formed in the surface of the rotary table (15) through, a brush (19) is fixedly mounted in the center of the inner bottom surface of the support, the brush (19) is connected with the electrode holder (18) through a ball screw, a plurality of electrode rods are fixedly connected to the surface of the electrode holder (18) at intervals and used for mounting the stainless steel electrode (16), each electrode rod corresponds to and is coaxial with the position of each electrode hole, a rotary support is mounted on the surface of the machine tool table (1), the SiC single crystal electrode is fixed on the rotary support, and the SiC single crystal electrode comprises a clamper (11) fixedly connected to the upper end of the rotary support, the clamper (11) is positioned right above the rotary workbench (15) and used for clamping the SiC single crystal (12), and the pulse power supply (17) is connected with the electric brush (19) and the SiC single crystal (12) through a lead.
3. A SiC single crystal plasma electrochemical polishing apparatus according to claim 1, characterized in that the rotation directions of the rotary table (15) and the rotary support are opposite.
4. A SiC single crystal plasma electrochemical polishing apparatus according to claim 1, characterized in that a nozzle (10) is mounted at one end of the conduit (9), said nozzle (10) being located directly above the polishing pad (14) and close to the SiC single crystal electrode.
5. A SiC single crystal plasma electrochemical polishing apparatus according to claim 1, characterized in that the other end of the conduit (9) is connected to the electrolyte tank (2), and a filter screen (4) is installed at the connection of the conduit (9) and the electrolyte tank (2), the filter screen (4) is located inside the conduit (9), and a hydraulic pump (5), a flow meter (6) and a thermostat (7) are connected to the conduit (9) in sequence.
6. A SiC single crystal plasma electrochemical polishing apparatus according to claim 1, characterized in that a glass cover (8) is fixedly attached around the machine tool table (1), and the electrolyte tank (2), the pulse power supply (17) and the electrode group are located inside the glass cover.
7. A SiC single crystal plasma electrochemical polishing apparatus according to claim 6, wherein an exhaust pipe (13) is connected to an upper portion of the side wall of said glass housing (8).
8. A polishing method of the SiC single crystal plasma electrochemical polishing apparatus as defined in any one of claims 1 to 7, comprising the steps of:
step 1, clamping the excircle of the SiC single crystal (12) by using a clamper 11, and adjusting a rotary worktable (15) to a position where a polishing pad (14) is in contact with the surface to be polished of the SiC single crystal (12);
step 2, mounting the stainless steel electrode (16) on an electrode rod of an electrode frame (18), and driving a ball screw to adjust the lifting height of the electrode frame (18) through a motor so that the distance between the upper end surface of the stainless steel electrode (16) and the upper surface of the polishing pad (14) is 100 microns;
step 3, injecting a proper amount of water-based electrolyte (3) into the electrolyte tank (2), spraying the water-based electrolyte (3) to the vicinity of the contact surface of the SiC monocrystal (12) and the polishing pad (14) through a guide pipe (9) by a nozzle (10), and controlling the temperature of the water-based electrolyte by a thermostat (7); the rotary worktable (15) and the clamper (11) are respectively driven by a motor to do rotary motion, so that the surface of the polishing pad (14) contacted with the SiC monocrystal (12) generates relative motion;
step 4, turning on and adjusting the pulse power supply (17) to enable the voltage to be 300V and the switching-off frequency to be 100 kHz; the water-based electrolyte sprayed out from the nozzle 10 is electrolyzed to generate oxygen plasma, SiC monocrystal Si atoms under the action of a strong electric field are activated to form a softer sparse layer, and the sparse layer is removed by polishing through a polishing pad (14), so that the polishing effect is achieved.
CN201910321122.3A 2019-04-19 2019-04-19 SiC single crystal plasma electrochemical polishing device and polishing method thereof Expired - Fee Related CN110004484B (en)

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CN111558851B (en) * 2020-04-16 2022-04-15 南方科技大学 Grinding method and grinding device
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