CN102174691A - Quick base material temperature raising and reducing technology in large-scale production of thin film photovoltaic battery - Google Patents

Quick base material temperature raising and reducing technology in large-scale production of thin film photovoltaic battery Download PDF

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Publication number
CN102174691A
CN102174691A CN2011100635684A CN201110063568A CN102174691A CN 102174691 A CN102174691 A CN 102174691A CN 2011100635684 A CN2011100635684 A CN 2011100635684A CN 201110063568 A CN201110063568 A CN 201110063568A CN 102174691 A CN102174691 A CN 102174691A
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China
Prior art keywords
electrode
base material
water
water pipe
film photovoltaic
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Pending
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CN2011100635684A
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Chinese (zh)
Inventor
奚建平
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SUZHOU SPRUCE PHOTOVOLTAIC ENERGY TECHNOLOGIES Inc
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SUZHOU SPRUCE PHOTOVOLTAIC ENERGY TECHNOLOGIES Inc
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Priority to CN2011100635684A priority Critical patent/CN102174691A/en
Publication of CN102174691A publication Critical patent/CN102174691A/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to a quick base material temperature raising and reducing technology in the large-scale production of a thin film photovoltaic battery, relating to a quick base material temperature raising and reducing technology in a PECVD (Plasma Enhanced Chemical Vapor Deposition) preparation process. An electrode is arranged in vacuum equipment and is connected with an external radio frequency power supply, and a base material is attached to the electrode; a heating pipe with a heating wire inside and a water pipe though which water flows are inlaid on the surface of the electrode or in the electrode; and the water pipe also can be connected with a water chiller, and water close to freezing point flows through the water pipe. By using the technology, the raising and reducing speed rates of the temperature of the electrode can be accelerated quickly, operation efficiency and equipment utilization rate are both improved to some degree, and the production capability of equipment can be exerted fully.

Description

Base material fast lifting temperature technique in the film photovoltaic cell scale manufacturing
Technical field
The present invention relates to fexible film photovoltaic cell scale manufacturing technology, specially refer to base material fast lifting temperature technique in the PECVD preparation process.
Background technology
Before the present invention proposed, the manufacturing of fexible film photovoltaic cell had formed the production of mass-producing.In the production process of this mass-producing, PECVD (plasma enhanced chemical vapor deposition) preparation operation is crucial technological process.When system added voltage between electrode, the electronics that is come out by emission of cathode was accelerated at electric field and obtains energy, by with reaction chamber in gas or molecular impact, make its separation, excite or ionization, formed a lot of electronics, ion and active group.Particle with positive equate with negative total charge, be a kind of plasma body.These particles of forming plasma body through series of physical-chemical reaction process, form film with regard to being deposited on the base material.The PECVD operation is carried out in vacuum apparatus, and the electrode of mutual correspondence is arranged in this equipment, is covered with base material on the electrode, and electrode also links together with equipment radio-frequency power supply outward.Utilize the radio-frequency power supply counter electrode to heat, when reaching specified temperature, the electronics that obtains energy just begins the PECVD operation, and when the film on base material reached certain requirement, the PECVD operation just stopped to carry out.This operation need just can be carried out under certain temperature (~200 ℃), radio-frequency power supply on the dependence equipment carries out heat temperature raising, because the power of radio-frequency power supply is not high, so temperature rise rate is less, need boosting and needs just can reach working temperature to the time than length.Among the PECVD operation process, the battery substrate needs different temperature, could unload with atmosphere after the temperature of having plated the hull cell work in-process (being base material) of film also needs to reduce to contact.Common way is to feed nitrogen in equipment, utilizes flowing nitrogen that the heat in the equipment is brought out, and reaches the purpose of cooling.Yet the heat that nitrogen can be taken away is limited, is difficult at short notice the temperature of equipment is lowered.Thereby influence plant factor.
Summary of the invention
The technical problem to be solved in the present invention is to overcome deficiency of the prior art, propose a kind of in the film photovoltaic cell scale manufacturing technology of base material rapid temperature rise and drop.In the PECVD operation process, shorten and heat up and temperature fall time, improve operating efficiency and usage ratio of equipment.
The present invention is achieved by the following technical measures.Base material fast lifting temperature technique in the film photovoltaic cell scale manufacturing comprises that inside is equipped with the vacuum apparatus of electrode, and described electrode interconnects with outside radio-frequency power supply, on the described electrode also with base material; On described electrode, inlaying inner the be equipped with electrothermal tube of nichrome wire and the water pipe of inner water flowing.
Described electrothermal tube and water pipe are embedded in electrode surface or inside.
Described electrode interconnects with the radio-frequency power supply of outside, converts electrical energy into heat energy, and directly counter electrode heats, because electric heating tube is to be embedded in the heat conduction good metal electrode, realizes being rapidly heated of electrode by the control to electric power.
Described water pipe links to each other with handpiece Water Chilling Units, and the heat of electrode will be by giving water coolant thermal energy transfer with the heat exchange of water coolant.Because water-cooled tube is to be embedded in the heat conduction good metal electrode,, realize the control of electric power is realized the fast cooling of electrode by delivering goods with the heat of chilled(cooling) water return (CWR).
After the present invention adopts abovementioned technology, when the PECVD operation begins to carry out, utilize the electrothermal tube that nichrome wire is housed to continue heating, till reaching processing temperature.After the PECVD end of job, utilize the water coolant counter electrode in the water pipe to cool off, also can use water to cool off by cooling-water machine near freezing point.So no matter to be the heating phase, or cooling stages, the elevation rate of electrode temperature can be accelerated significantly, also will save many times, and operating efficiency and usage ratio of equipment all increase, and the throughput of equipment is also given full play to.
Description of drawings
Accompanying drawing 1 is the equipment synoptic diagram in the embodiments of the invention.
Accompanying drawing 2 is electrode in the embodiments of the invention 2, electrothermal tube, water pipe layout synoptic diagram.
Among the figure: 1 is vacuum apparatus, and 2 is one of electrode, and 3 is one of electrode, and 4 is radio-frequency power supply, and 5 is base material, and 6 is nichrome wire, and 7 is electrothermal tube, and 8 is water pipe, and 9 is cooling-water machine, and 10 is heating power supply.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
Embodiment 1, as shown in Figure 1, in the film photovoltaic cell scale manufacturing, carry out the equipment of PECVD operation, comprise vacuum apparatus 1, in the inside of vacuum apparatus 1 electrode 2 and 3 are housed, there is radio-frequency power supply 4 outside of vacuum apparatus 1, and electrode 2 and 3 interconnects with radio-frequency power supply 4 respectively, also has base material 5 on the electrode 2 and 3; On the surface of electrode 2 and 3, inlaying inner the be equipped with electrothermal tube 7 of nichrome wire 6 and the water pipe 8 of inner water flowing.Water pipe 8 interconnects with cooling-water machine 9, feeds the water near freezing point in described water pipe.
When the PECVD operation begins operation, connect nichrome wire 6 by heating power supply 10, further heat by electrothermal tube 7 counter electrode 2 and 3, base material, till reaching job requirement.
After finishing the PECVD operation, when needing cooling, start cooling-water machine 9, to the water of water pipe 8 conveyings, till the temperature of electrode 2 and 3, base material reaches normal temperature near freezing point.
Embodiment 2.Referring to Fig. 1 and Fig. 2, in the film photovoltaic cell scale manufacturing, carry out the equipment of PECVD operation, be with the difference of embodiment 1: the electrothermal tube 7 that nichrome wire 6 is housed is embedded on the surface of electrode 2 and 3; 8 inboards that are embedded in electrode 2 and 3 of water pipe of inner water flowing are more near the place of base material.When needs were lowered the temperature, the cooling performance of the water coolant in the water pipe 8 was more effective like this, and rate of cooling improves more.
Above-described only is preferred implementation of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the principle of the invention, can also make some modification and improvement, these also should be considered as belonging to protection scope of the present invention.

Claims (3)

1. base material fast lifting temperature technique in the film photovoltaic cell scale manufacturing, comprise that inside is equipped with the vacuum apparatus (1) of electrode (2 and 3), described electrode (2 and 3) interconnects with the radio-frequency power supply (4) of outside, also has base material (5) on the described electrode (2 and 3); It is characterized in that: on described electrode (2 and 3), inlaying the electrothermal tube (7) that inside is housed by nichrome wire (6) and the water pipe (8) of inner water flowing.
2. according to claim 1 in the film photovoltaic cell scale manufacturing base material fast lifting temperature technique, it is characterized in that: described electrothermal tube (7) and water pipe (8) are embedded in electrode (2 and 3) surface or inner.
3. according to claim 1 in the film photovoltaic cell scale manufacturing base material fast lifting temperature technique, it is characterized in that: described water pipe (8) with provide cooling-water machine (9) to interconnect near the water of freezing point.
CN2011100635684A 2011-03-17 2011-03-17 Quick base material temperature raising and reducing technology in large-scale production of thin film photovoltaic battery Pending CN102174691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011100635684A CN102174691A (en) 2011-03-17 2011-03-17 Quick base material temperature raising and reducing technology in large-scale production of thin film photovoltaic battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011100635684A CN102174691A (en) 2011-03-17 2011-03-17 Quick base material temperature raising and reducing technology in large-scale production of thin film photovoltaic battery

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CN102174691A true CN102174691A (en) 2011-09-07

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102394255A (en) * 2011-11-15 2012-03-28 苏州思博露光伏能源科技有限公司 Technology of spraying electrodes while depositing film in manufacture of flexible film photovoltaic battery
CN103397311A (en) * 2013-08-15 2013-11-20 苏州思博露光伏能源科技有限公司 PECVD (Plasma Enhanced Chemical Vapor Deposition) flexible solar battery manufacturing equipment
CN111223776A (en) * 2018-11-23 2020-06-02 隆基乐叶光伏科技有限公司 Method and device for coating crystalline silicon wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100411096C (en) * 2005-03-11 2008-08-13 东京毅力科创株式会社 Temperature control system and substrate processing apparatus
CN202107764U (en) * 2011-03-17 2012-01-11 苏州思博露光伏能源科技有限公司 Fast substrate temperature raising and reducing device in film photovoltaic cell scale manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100411096C (en) * 2005-03-11 2008-08-13 东京毅力科创株式会社 Temperature control system and substrate processing apparatus
CN202107764U (en) * 2011-03-17 2012-01-11 苏州思博露光伏能源科技有限公司 Fast substrate temperature raising and reducing device in film photovoltaic cell scale manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102394255A (en) * 2011-11-15 2012-03-28 苏州思博露光伏能源科技有限公司 Technology of spraying electrodes while depositing film in manufacture of flexible film photovoltaic battery
CN103397311A (en) * 2013-08-15 2013-11-20 苏州思博露光伏能源科技有限公司 PECVD (Plasma Enhanced Chemical Vapor Deposition) flexible solar battery manufacturing equipment
CN103397311B (en) * 2013-08-15 2016-05-18 苏州思博露光伏能源科技有限公司 Pecvd flexible solar battery manufacturing equipment
CN111223776A (en) * 2018-11-23 2020-06-02 隆基乐叶光伏科技有限公司 Method and device for coating crystalline silicon wafer

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Application publication date: 20110907