CN100411096C - Temperature control system and substrate processing apparatus - Google Patents
Temperature control system and substrate processing apparatus Download PDFInfo
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- CN100411096C CN100411096C CNB2006100577283A CN200610057728A CN100411096C CN 100411096 C CN100411096 C CN 100411096C CN B2006100577283 A CNB2006100577283 A CN B2006100577283A CN 200610057728 A CN200610057728 A CN 200610057728A CN 100411096 C CN100411096 C CN 100411096C
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Abstract
The object of this invention is to reduce a setting space, and to reduce the usage of a cooling medium in the temperature control system of the plurality of members of a plasma treatment apparatus. This temperature control system 80 is provided with a circulation system 91 for circulating brine, so that brine can pass inside an upper electrode 20 and a susceptor 12, a heat exchange 100 for carrying heat exchange between the brine and substitute chlorofluorocarbon of the circulation system 91, and a freezer 92 for supplying the substitute chlorofluorocarbon to the heat exchanger 100. The circulation system 91 is provided with a first branch pipe 111 passing inside the upper electrode 20, and a second branch pipe 112 passing inside the susceptor 12. The respective branch pipes 111 and 112 of the upper electrode 20 and the susceptor 12 are respectively formed with a heater 121 for heating the brine. The heat exchanger 100 is installed in a clean room R, and the freezer 92 is installed in a facility room B.
Description
Technical field
The present invention relates to the temperature control system and the substrate board treatment of the part temperatures at a plurality of positions of control basal plate processing unit.
Background technology
For example in the manufacturing process of semiconductor utensil, for example use the etch processes of plasma and film forming to handle.
These use the processing of plasma generally to be undertaken by the plasma processing apparatus in the clean room that factory is set.Use has the structure of the parallel plate-type of electrode up and down mostly in plasma device.This plasma processing unit for example has the upper electrode that applies the High frequency power that is used to produce plasma in container handling, the lower electrode of placing substrate etc.With the pressure of the regulation that reduces pressure in the container handling, in container handling, supply with and handle gas then, by apply the High frequency power that is used to produce plasma at upper electrode, in container handling, produce plasma, by the film on this plasma etching substrates.
Above-mentioned plasma treatment be owing to will generate plasma, so carry out under hot conditions, but for the treatment state that makes substrate keeps certain, must make the temperature in the container handling and the temperature of substrate keep certain.For example on the lower electrode and upper electrode of plasma processing apparatus, being connected with circulation and supplying with the cooling device that coolant is taken away the heat of storage for this reason.
Existing cooling device is set on the floor of the clean room that plasma processing apparatus is provided with.Afterwards, the circulating path that extends to plasma processing apparatus through the cooling device of associating is supplied with coolant to electrode, cooling electrode (for example with reference to patent documentation 1).In addition, because the control temperature of upper electrode and lower electrode is different, so each electrode is provided with different cooling devices.
[patent documentation 1] Japan Patent spy opens the 2001-332463 communique
Summary of the invention
But, under the situation of the present distance from the plasma processing apparatus to the cooling device, owing to behind the temperature stabilization that will make coolant coolant being supplied to electrode, so the jar that stores coolant will be set in the cooling device.Therefore cooling device maximizes, and in addition because upper/lower electrode is respectively arranged with large-scale like this cooling device, institute thinks the big space of cooling device needs is set.Be the treatment state of control basal plate more closely in recent years, also will carry out temperature control, be provided with for these parts under the situation of cooling device, need wideer space for the parts except that upper/lower electrode.
Add owing to need store coolant in holding vessel, the use amount of coolant is very many, and the cost burden that coolant is relevant is also big.
Given this present invention puts and the invention carried out, its objective is, for the substrate board treatment of plasma processing apparatus etc., in the temperature control system of the parts at a plurality of positions of its electrode etc., reduces that the space being set, and reduces the use amount of coolant.
For achieving the above object, the part temperatures at a plurality of positions of temperature control system control basal plate processing unit of the present invention is characterized in that possessing: the circulatory system that makes a coolant circulation in the mode of each components interior by above-mentioned a plurality of positions; The heat exchanger that between coolant of the above-mentioned circulatory system and secondary coolant, carries out heat exchange; With the refrigerator that the secondary coolant is supplied to above-mentioned heat exchanger, wherein, the above-mentioned circulatory system has the shunt access by above-mentioned components interior on each parts, on each shunt access of above-mentioned each parts, the heater block that heats to a coolant of above-mentioned parts for heating is set, and above-mentioned heat exchanger is arranged in the chamber that the aforesaid substrate processing unit is provided with.
As adopt the present invention, the heat exchanger of a coolant is arranged in the chamber identical with substrate board treatment.And in the circulatory system of a coolant, in each parts, forming the shunt access of the parts that lead to a plurality of positions, this each shunt access is provided with the heater block of adjusting a coolant temperature.Thus, even unlike existing, holding vessel is set, also a coolant of set point of temperature can be supplied to each parts at a plurality of positions, so can realize saving the space of temperature control system.In addition because just enough with a refrigerator, so even the quantity of increase parts also need not increase the space that is provided with that refrigerator takies to the temperature control of the parts at a plurality of positions.Can reduce the use amount of a coolant significantly.Above-mentioned in addition chamber also can be the clean room.
Can above-mentioned each shunt access be provided with flow control valve.The accumulator tank of a standing coolant not in can the above-mentioned circulatory system.
The said temperature control system has the coolant retracting device one time, it can reclaim a coolant in the above-mentioned circulatory system, make a coolant of above-mentioned recovery turn back to the circulatory system, an above-mentioned coolant retracting device can constitute can freely be dismantled the above-mentioned circulatory system.
An above-mentioned coolant retracting device can have: the accumulator tank that stores a coolant; Be used for a coolant of the above-mentioned circulatory system is imported first pipeline of above-mentioned accumulator tank; Be used for second pipeline that a coolant of above-mentioned accumulator tank is derived from the above-mentioned circulatory system; With the gas supply pipe road that supplies gas in above-mentioned second pipeline.
Above-mentioned accumulator tank is housed in the sealable accumulator tank accepting container, and the above-mentioned gas feeding pipe can constitute also can supply with above-mentioned gas in above-mentioned accumulator tank accepting container.
Also have second circulatory system that makes a coolant circulation in the mode of the inside by above-mentioned specific features for the specific features in the parts at above-mentioned a plurality of positions, substitute the above-mentioned circulatory system; Second heat exchanger with the heat exchange of a coolant that carries out above-mentioned second circulatory system, substitute above-mentioned heat exchanger, above-mentioned second heat exchanger can carry out the heat exchange of an above-mentioned coolant by three coolants with respect to above-mentioned refrigerator.
As adopt other viewpoint of the present invention, the parts with inventive aspect 1～8 described temperature control system are provided.
As adopt the present invention, can realize that temperature control system miniaturization, minimizing are provided with the space.In addition, can reduce the use amount of coolant, realize reducing cost.
Description of drawings
Fig. 1 is the sectional arrangement drawing of expression plasma processing apparatus schematic configuration.
Fig. 2 is the schematic diagram of the schematic configuration of expression temperature control system.
Fig. 3 is the schematic diagram of the schematic configuration of expression salt apparatus for recovering.
The sectional arrangement drawing of the structure of plasma processing apparatus when Fig. 4 carries out temperature control for expression to container handling and blast pipe.
The sectional arrangement drawing of the structure of temperature control system when Fig. 5 carries out temperature control for expression to container handling and blast pipe.
Fig. 6 is the schematic diagram that is illustrated in the structure of temperature control system when using three coolants in the brine-cooled.
Symbol description
1 plasma processing apparatus
12 pedestals
20 upper electrodes
80 temperature control systems
91 circulatory systems
92 refrigerators
100 heat exchangers
111 first isocons
112 second isocons
The W substrate
Embodiment
Below the preferred embodiment of the present invention is described.Fig. 1 is the sectional arrangement drawing of expression as the schematic configuration of the plasma processing apparatus 1 of the substrate board treatment of the temperature control system application of present embodiment.
The center bottom of pedestal 12 in insulation board 11 is arranged on container handling 10.Pedestal 12 is made and is roughly cylindrically, can place substrate W in the above.Pedestal 12 is for example formed by aluminium alloy, constitutes the lower electrode of parallel plate-type electrode structure.
Inside at pedestal 12 forms annular channels 13.Path 13 constitutes the part of the circulatory system 91 described later, is communicated with heat exchanger 100.To the salt solution of path 13 circulation supplies, can supply with the temperature of the substrate W on the control pedestal 12 through the circulatory system 91 by this circulation as a coolant.
Be arranged on the top of pedestal 12 with the upper electrode 20 that pedestal 12 relative being used to generate plasma.Between pedestal 12 and upper electrode 20, form and generate plasma space.
Be formed with the path 30 of the annular that salt solution passes through in the inside of the top board 23 of for example upper electrode 20.Path 30 constitutes the part of the circulatory system 91 described later, is communicated with heat exchanger 100.Salt solution is supplied with in 91 circulations through the circulatory system in path 30, supplies with the temperature that can control upper electrode 20 by this circulation.
First high frequency electric source 41 is electrically connected with upper electrode 20 across adaptation 40.First high frequency electric source 41 for example can be exported more than the 40MHz, for example the High frequency power of 60MHz frequency.On upper electrode 20, apply High frequency power by this first high frequency electric source 41, can in process chamber S, generate plasma.
Second high frequency electric source 51 is electrically connected with pedestal 12 across adaptation 50.Second high frequency electric source 51 can be exported for example 2MHz～20MHz scope, for example High frequency power of 20MHz frequency.On pedestal 12, apply High frequency power by this second high frequency electric source 51, the charged particle in the process chamber S can be attracted to substrate W side.
There is not the blast pipe 60 of exhaust apparatus of expression to be connected the side of container handling 10 in the connected graph.By exhaust from blast pipe 60, the desired pressure in the processing container 10 that can reduce pressure.
In plasma processing apparatus 1, be provided with the apparatus control portion 70 that is used to control each cell operation of implementing etch processes of for example handling gas supply source 25, first high frequency electric source 41, second high frequency electric source 51 etc.In addition, apparatus control portion 70 also can be controlled the heater of the circulatory system 91 of salt solution described later and the work of flow rate regulating valve.
The plasma etch process of carrying out with this plasma processing unit 1 at first remains on substrate W absorption on the pedestal 12.Remain on substrate W on the pedestal 12 and be adjusted to the set point of temperature of pedestal 12.Then for example by from the exhaust of blast pipe 60 pressure with the regulation that reduces pressure in the process chamber S.To handle gas supplies in the process chamber S from upper electrode 20.Apply High frequency power to upper electrode 20 with first high frequency electric source 41, the processing gas in the process chamber S is by plasmaization.In addition, apply High frequency power on pedestal 12, with the guiding of the charged particle in plasma substrate W side with second high frequency electric source 51.By the effect of these plasmas, the film on the substrate W is carried out etching.
Below to the upper electrode 20 of above-mentioned plasma processing apparatus 1 with carry out pedestal 12 temperature controlled temperature control systems 80 and describe.Fig. 2 is the schematic diagram of expression temperature control system 80 schematic configuration.
As shown in Figure 1, heat exchange unit 90 for example is arranged on the framework 1a of the plasma processing apparatus 1 among the R of clean room.As shown in Figure 2, heat exchange unit 90 for example has heat exchanger 100 and pump 101.Heat exchanger 100 is the evaporation by the replacement fluorine carbon compound supplied with from refrigerator 92 for example, the salt solution in can cooling recirculation system 91.Pump 101 for example is arranged on the outlet side of heat exchanger 100, can make the salt boiler water circulation in the circulatory system 91.
The circulatory system 91 for example has through the pipeline 110 in the heat exchange unit 90, from two isocons 111,112 of pipeline 110 shuntings.First isocon 111 for example leads to upper electrode 20 from the pipeline 110 of the outlet side of heat exchanger 100, through the path 30 in the upper electrode 20, leads to the pipeline 110 of the entrance side of heat exchanger 100.Second isocon 112 leads to pedestal 12 from the pipeline 110 of the outlet side of heat exchanger 100, by the path 13 in the pedestal 12, leads to the pipeline 110 of the entrance side of heat exchanger 100.As adopt this circulatory system 91, and will supply to upper electrode 20 and pedestal 12 respectively with heat exchanger 100 cooled salt moisture flow, can turn back to identical heat exchanger 100 again.
At the entrance side of the upper electrode 20 of first isocon 111, just the upstream side at upper electrode 20 is provided with flow rate regulating valve 120 and heater 121.Second isocon 112 is provided with flow rate regulating valve 120 and heater 121 at the entrance side of the pedestal 12 of second isocon 112 too.Thus, flow, the temperature of regulation will be adjusted to from the salt solution that pipeline 110 supplies to each isocon 111,112 respectively, each electrode 20 and 12 can be supplied to.Therefore upper electrode 20 can be adjusted to different temperature with pedestal 12.
Work to the temperature control system 80 that as above constitutes describes below.Salt solution in the circulatory system 91 circulates by pump 101 pressurized delivered.The replacement fluorine carbon compound cooling of the salt solution of heat exchanger 100 by supplying with from refrigerator 92.Be cooled to the lower temperature of target control temperature at the salt solution of heat exchanger 100 than upper electrode 20 and pedestal 12.The salt solution that is cooled in heat exchanger 100 is diverted to each isocon 111,112 from the pipeline 110 of the circulatory system 91.The flow proportional of shunting this moment is controlled by the flow rate regulating valve 120 of setting each isocon 111,112 for example according to the target control temperature of upper electrode 20 and pedestal 12.
The salt solution that flow into first isocon 111 is heated by heater 121, is adjusted to the target control temperature of regulation.In first isocon 111, the adjusted salt solution of temperature is supplied to the inside of upper electrode 20, adjust the temperature of upper electrode 20.Salt solution turns back to pipeline 110 from first isocon 111 afterwards, turns back to heat exchanger 100.In addition, the salt solution that flows into second isocon 112 is adjusted to the target control temperature of regulation by heater 121, supplies to the inside of pedestal 12.The salt solution of second isocon 112 turns back to pipeline 110 after adjusting the temperature of pedestal 12, turns back to heat exchanger 100.The salt solution that turns back to heat exchanger 100 is re-supplied to upper electrode 20 or pedestal 12 by the cooling of replacement fluorine carbon compound.
As adopting above execution mode, the heat exchanger 100 of salt solution is arranged in the R of clean room, forms the circulatory system 91 of salt solution between heat exchanger 100 and upper electrode 20 or pedestal 12, on each isocon 111,112 of the circulatory system 91 heater 121 is set.With the salt moisture flow of heat exchanger 100, can be adjusted to desired temperatures respectively thus, supply to upper electrode 20 and pedestal 12.As the structure adopting, need not in the B of effectiveness chamber, holding vessel be set so now, and the circulating path of salt solution shortens also, so can reduce the use amount of salt solution significantly.Pass through the salt solution of refrigerator 92 cooling heat exchangers 100 in addition, salt solution is supplied to a plurality of parts from heat exchanger 100, so need not carry out on the temperature controlled parts refrigerator being set at each so now, can make temperature control system 80 miniaturizations, reduce setting space significantly.
The temperature control system of recording and narrating in above execution mode 80 also can possess for the circulatory system 91 installable salt apparatus for recovering 150 as a coolant retracting device.Salt apparatus for recovering 150 is the devices that are used for the salt solution in the recovery of circulatory system 91 and the salt solution that reclaims turned back to the circulatory system 91.
For example as shown in Figure 3, salt apparatus for recovering 150 mainly have the holding vessel 160 that stores salt solution, be used for the salt solution of the circulatory system 91 import holding vessel 160 first pipeline 161, be used for the salt solution of holding vessel 160 derive the circulatory system 91 second pipeline 162, can with air-tight state accommodate holding vessel 160 holding vessel accepting container 163, be used for the gas supply pipe 164 of gases such as supply nitrogen and air to second pipeline 162 and holding vessel accepting container 163 in.
For example first pipeline 161 can be connected on the circulatory system 91 by the hookup 170 as link.First pipeline 161 for example can be connected on the heat exchanger 100 and the pipeline 110 between the pump 101 of the circulatory system 91.First pipeline 161 is provided with first switch valve 171 that is used for dynamically stopping to import salt solution.
Gas supply pipe 164 a for example end of upstream side can connect on the gas supply source that does not have expression in the drawings, and the other end in downstream is connected on the nozzle 190 in second pipeline 162 and the holding vessel accepting container 163.Gas supply pipe 164 is provided with three switch valve 191 and four switch valve 192 from control to nozzle 190 supply gas of control to second pipeline, 162 supply gas.
For example carry out plasma treatment in plasma processing apparatus 1, when the temperature control of carrying out upper electrode 20 and pedestal 12, salt apparatus for recovering 150 can be pulled down from the circulatory system 91.In addition, for example when the safeguarding of the circulatory system 91, first pipeline 161 and second pipeline 162 are connected on the circulatory system 91.In addition, during salt solution in recovery of circulatory system 91, for example under the state of the pump 101 that starts the circulatory system 91, open first switch valve 171 and the 3rd switch valve 191, close second switch valve 181 and the 4th switch valve 192.In addition, to second pipeline, 162 supply gas, this gas imports the circulatory system 91 from second pipeline 162 from gas supply pipe 164.The gas extruding of salt solution in the circulatory system 91 by importing through first pipeline 161, is directed in the holding vessel 160.Like this salt solution in the circulatory system 91 is recovered in the holding vessel 160.
When the maintenance in the circulatory system 91 finishes, makes the salt solution in the holding vessel 160 to turn back in the circulatory system 91, for example under the state that starts pump 101, open second switch valve 181 and the 4th switch valve 192, close first switch valve 171 and the 3rd switch valve 191, from gas supply pipe 164 supply gas in holding vessel accepting container 163, import the circulatory system 91 through second pipeline 162 then by the salt solution in the holding vessel 160 of this gas extruding.Salt solution in the holding vessel 160 turns back in the circulatory system 91 like this.Afterwards salt apparatus for recovering 150 is pulled down from the circulatory system 91.
As according to example, can carry out the maintenance of the circulatory system 91 simply.In addition because the holding vessel of the maintenance usefulness that need not set up, so for example can make heat exchange unit 90 miniaturizations.
In the above embodiment, the part temperatures at the upper electrode 20 of temperature control system 80 control plasma processing apparatus 1 and two positions of pedestal 12 also can be controlled three part temperatures with the upper part of the miscellaneous part that comprises plasma processing apparatus 1.For example temperature control system 80 also can be controlled the temperature of upper electrode 20 and pedestal 12, adds the container handling 10 of control plasma processing apparatus 1 and the temperature of blast pipe 60.In this case, for example as shown in Figure 4, in plasma processing apparatus 1, be provided with path 200 through the salt solution of the interior of container handling 10, through the path 201 of the salt solution of the interior of blast pipe 60.As shown in Figure 5, the circulatory system 91 of temperature control system 80 is provided with from pipeline 110 through container handling 10, through the isocon 202 of path 200 back return pipelines 110 with from pipeline 110 process blast pipes 60, through the isocon 203 of path 201 back return pipelines 110.On isocon 202 and isocon 203, be respectively arranged with flow control valve 120 and heater 121.Thus, container handling 10 is also the same with pedestal 12 with upper electrode 20 with blast pipe 60, can carry out temperature control by same heat exchanger 100.
In plasma processing apparatus 1, for compare high temperature controlled parts in carrying out temperature controlled parts, three coolants of use refrigerator 92 can refrigerated brine.
In this case, for example can carry out temperature controlled parts for the salt solution by the ratio lower temperature below 0 ℃, for example for upper electrode 20 and pedestal 12, identical with above-mentioned execution mode, salt solution is by the replacement fluorine carbon compound cooling from refrigerator 92.Temperature controlled parts be can carry out for for example salt solution,, as shown in Figure 6, heat exchanger unit 90 and the second other heat exchanger unit 210 are provided with for example for container handling 10 and blast pipe 60 by the ratio higher temperatures more than 0 ℃.This heat exchanger unit 210 is set in the R of clean room.Identical with heat exchange unit 90, salt solution is connected on second heat exchange unit 210 in second circulatory system 211 of circulation between container handling 10 and the blast pipe 60.In addition, second heat exchange unit 210 has second heat exchanger 212 and pump 213.Second circulatory system 211 has through the pipeline 214 in second heat exchange unit 210, is connected on this pipeline 214 through the above-mentioned isocon 202 of container handling 10 and the above-mentioned isocon 203 of process blast pipe 60.As mentioned above, each isocon 202,203 is provided with flow rate regulating valve 120 and heater 121.Three coolant peripheral passages 140 form cooling water are supplied to second heat exchanger 212, supply to refrigerator 92 afterwards.Thus, in second heat exchanger 212, three coolant cooling processing containers 10 and blast pipe 60 by refrigerator 92 carry out temperature controlled salt solution.
In this case, carrying out temperature controlled parts has when a plurality of, for the parts of wanting the control ratio higher temperatures, the high salt solution of temperature is circulated, so for example can correctly carry out adjusting at short notice by the heater 121 of each isocon 202,203 to brine temp.
With reference to accompanying drawing the preferred embodiment of the present invention is illustrated above, but is not limited to example of the present invention.The technical staff of the industry can know can obtain various corresponding modifications or correction example in the thought category that the claim scope is recorded and narrated, also belong to technical scope of the present invention certainly for these.The present invention can adopt the variety of way that is not limited thereto example.For example in the present embodiment, the substrate board treatment with temperature controlled parts is to carry out etched plasma processing apparatus, also can be to carry out plasma processing apparatus that film forming handles and without other substrate board treatments of plasma.
Industrial utilizability
The present invention can arrange the space in order to minimizing in the temperature control system of a plurality of parts of substrate board treatment, reduce the use amount of cooling medium.
Claims (12)
1. temperature control system, the part temperatures at a plurality of positions of control basal plate processing unit is characterized in that possessing:
Make the circulatory system of a coolant circulation in the mode of each components interior by described a plurality of positions;
The heat exchanger that between coolant of the described circulatory system and secondary coolant, carries out heat exchange; With
The secondary coolant is supplied to the refrigerator of described heat exchanger,
Wherein, the described circulatory system has the shunt access by described components interior on each parts,
On each shunt access of described each parts, the heater block that a coolant that feeds to described parts is heated is set,
Described heat exchanger is arranged in the chamber of described substrate board treatment setting.
2. temperature control system as claimed in claim 1 is characterized in that:
Described chamber is the clean room.
3. temperature control system as claimed in claim 1 or 2 is characterized in that:
Described each shunt access is provided with flow control valve.
4. temperature control system as claimed in claim 1 or 2 is characterized in that: the accumulator tank of a coolant of not setting up in the described circulatory system.
5. temperature control system as claimed in claim 1 or 2 is characterized in that:
Have the coolant retracting device one time, the coolant that it can reclaim in the described circulatory system makes a coolant of described recovery turn back to the circulatory system,
A described coolant retracting device constitutes can freely be dismantled the described circulatory system.
6. temperature control system as claimed in claim 4 is characterized in that:
Have the coolant retracting device one time, the coolant that it can reclaim in the described circulatory system makes a coolant of described recovery turn back to the circulatory system,
A described coolant retracting device constitutes can freely be dismantled the described circulatory system.
7. temperature control system as claimed in claim 5 is characterized in that, a described coolant retracting device has:
Store the accumulator tank of a coolant;
Be used for a coolant of the described circulatory system is imported first pipeline of described accumulator tank;
Be used for a coolant of described accumulator tank is exported to second pipeline of the described circulatory system; With
Supply gas to the gas supply pipe road in described second pipeline.
8. temperature control system as claimed in claim 7 is characterized in that:
Described accumulator tank is housed in the accumulator tank accepting container that can seal,
Described gas supply pipe road constitutes also can supply with described gas in described accumulator tank accepting container.
9. temperature control system as claimed in claim 1 or 2 is characterized in that:
Also have second circulatory system that makes a coolant circulation in the mode of the inside by described specific features for the specific features in the parts at described a plurality of positions, substitute the described circulatory system; With
Carry out second heat exchanger of heat exchange of a coolant of described second circulatory system, substitute described heat exchanger,
Described second heat exchanger carries out the heat exchange of a described coolant by three coolants with respect to described refrigerator.
10. temperature control system as claimed in claim 7 is characterized in that:
Also have second circulatory system that makes a coolant circulation in the mode of the inside by described specific features for the specific features in the parts at described a plurality of positions, substitute the described circulatory system; With
Carry out second heat exchanger of heat exchange of a coolant of described second circulatory system, substitute described heat exchanger,
Described second heat exchanger carries out the heat exchange of a described coolant by three coolants with respect to described refrigerator.
11. temperature control system as claimed in claim 8 is characterized in that:
Also have second circulatory system that makes a coolant circulation in the mode of the inside by described specific features for the specific features in the parts at described a plurality of positions, substitute the described circulatory system; With
Carry out second heat exchanger of heat exchange of a coolant of described second circulatory system, substitute described heat exchanger,
Described second heat exchanger carries out the heat exchange of a described coolant by three coolants with respect to described refrigerator.
12. a substrate board treatment is characterized in that:
Parts with each described temperature control system in the claim 1～11.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2005068975A JP4615335B2 (en) | 2005-03-11 | 2005-03-11 | Temperature control system and substrate processing apparatus |
| JP2005068975 | 2005-03-11 |
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| CN100411096C true CN100411096C (en) | 2008-08-13 |
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| CN102174691A (en) * | 2011-03-17 | 2011-09-07 | 苏州思博露光伏能源科技有限公司 | Quick base material temperature raising and reducing technology in large-scale production of thin film photovoltaic battery |
| US10553408B2 (en) | 2013-07-12 | 2020-02-04 | Tokyo Electron Limited | Supporting member and substrate processing apparatus |
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| JP5223377B2 (en) | 2008-02-29 | 2013-06-26 | 東京エレクトロン株式会社 | Electrode for plasma processing apparatus, plasma processing apparatus and plasma processing method |
| JP6093267B2 (en) | 2013-08-09 | 2017-03-08 | 株式会社Kelk | Circulating cooling and heating device |
| KR20150046966A (en) * | 2013-10-23 | 2015-05-04 | 삼성디스플레이 주식회사 | Plasma processing apparatus and plasma processing method |
| KR101438182B1 (en) | 2014-06-26 | 2014-09-05 | (주)제이티에스코리아 | Attachment for controlling the flow rate and temperature of brine |
| JP6994419B2 (en) * | 2018-03-29 | 2022-01-14 | 東京エレクトロン株式会社 | Cooling system |
| JP6920245B2 (en) * | 2018-04-23 | 2021-08-18 | 東京エレクトロン株式会社 | Temperature control method |
| KR20200099688A (en) * | 2019-02-15 | 2020-08-25 | 이도형 | Vacuum deposition apparatus |
| CN112673228B (en) * | 2019-07-30 | 2022-11-11 | 东芝三菱电机产业系统株式会社 | Cooling device and cooling method |
| KR102290401B1 (en) * | 2020-01-10 | 2021-08-18 | 유니셈 주식회사 | Extremely low temperature chiller apparatus for semiconductor |
| JP7455612B2 (en) | 2020-02-28 | 2024-03-26 | 東京エレクトロン株式会社 | Temperature control medium processing device and temperature control medium processing method |
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| US5653806A (en) * | 1995-03-10 | 1997-08-05 | Advanced Technology Materials, Inc. | Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same |
| US6528116B1 (en) * | 1999-08-17 | 2003-03-04 | Applied Materials, Inc. | Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes |
| CN1423826A (en) * | 1999-11-15 | 2003-06-11 | 兰姆研究有限公司 | Temperature control system for plasma processing apparatus |
| JP2002353298A (en) * | 2001-05-23 | 2002-12-06 | Tokyo Electron Ltd | Placing equipment |
| US6822202B2 (en) * | 2002-03-15 | 2004-11-23 | Oriol, Inc. | Semiconductor processing temperature control |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102174691A (en) * | 2011-03-17 | 2011-09-07 | 苏州思博露光伏能源科技有限公司 | Quick base material temperature raising and reducing technology in large-scale production of thin film photovoltaic battery |
| US10553408B2 (en) | 2013-07-12 | 2020-02-04 | Tokyo Electron Limited | Supporting member and substrate processing apparatus |
| TWI692027B (en) * | 2013-07-12 | 2020-04-21 | 日商東京威力科創股份有限公司 | Supporting frame and substrate processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1832106A (en) | 2006-09-13 |
| JP2006253454A (en) | 2006-09-21 |
| JP4615335B2 (en) | 2011-01-19 |
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