CN101659568A - Atmospheric plasma chemical processing method of WC and SiC optical molding molds - Google Patents

Atmospheric plasma chemical processing method of WC and SiC optical molding molds Download PDF

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CN101659568A
CN101659568A CN200910072963A CN200910072963A CN101659568A CN 101659568 A CN101659568 A CN 101659568A CN 200910072963 A CN200910072963 A CN 200910072963A CN 200910072963 A CN200910072963 A CN 200910072963A CN 101659568 A CN101659568 A CN 101659568A
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plasma
gas
anode
sic
molding die
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CN101659568B (en
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王波
金会良
张强
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Harbin Institute of Technology
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Harbin Institute of Technology
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Abstract

The invention relates to an atmospheric plasma chemical processing method of WC and SiC optical molding molds, which belongs to the atmospheric plasma chemical processing methods of the optical molding molds. The atmospheric plasma chemical processing method can solve the problems that the grinding and polishing technology which is used for processing after processing and forming of the optical molding molds made of SiC and WC materials has the disadvantages of low processing efficiency, poor surface quality, damage of a sub-surface layer and short service life of the molds. The method comprises the steps of: introducing a mixture of plasma gas, reaction gas and oxygen into space between a cathode and an anode of a plasma generator, imposing radio frequency power signals on the cathode andthe anode, producing the plasma discharge between the two electrodes, then placing the surface to be processed of the WC or SiC optical molding mold in a plasma jet region for carrying out chemical reaction and realizing the optical surface processing of the optical molding molds made of the SiC and WC materials. The method is used for carrying out the optical processing on the surfaces of the WCand SiC optical molding molds.

Description

The atmosphere plasma chemical process method of WC, SiC optics molding die
Technical field
The present invention relates to the atmosphere plasma chemical process method of a kind of WC, SiC optics molding die.
Background technology
Compare with various glass lens, the optical mirror slip of glass material is owing to optical properties such as having high refractive index, low thermal coefficient of expansion obtains more and more widely application.It can be used for making various lens, prism and the spectral filter that dual-use opticinstrument uses; Make the fiber coupler lens that optical communication is used; Make the optically focused non-spherical lens that CD is used; Make the camera lens of digital camera, Digital Video, mobile phone etc.; Various aspheric surfaces that the manufacturing view finder is used or even diffraction optical lens etc., the annual demand to this class optical element in the whole world reaches more than one hundred million, adopts the technology of traditional grinding, polishing can't satisfy the process for processing of glass optical element so in enormous quantities.The optical glass lens compression molding technology is adopted in the processing of duplicating of high-precision optical element at present, it is that remollescent glass is put into high-precision mould, under the condition of pressurization and anaerobic of heating, disposable direct compression molding goes out to reach the optical element of service requirements.This making to molding die has proposed very high requirement, and it requires moulding stock to possess following feature: 1., the surface no defect, can grind to form pore-free, slick optical mirror plane; 2., under high ambient conditions, have a very high oxidation resistent susceptibility, surface quality is stable, and structure do not change, surface figure accuracy and smooth finish remain unchanged; 3., do not react with glass, the phenomenon that can not stick together, demolding performace is good; 4., have very high hardness and intensity etc. under the hot conditions.In sum, SiC (silicon carbide), WC (wolfram varbide) material become the preferred material of making optical mould.
SiC, WC material are because hard crisp very difficult processing, for guaranteeing the precision of processing mold, adopt high rigidity, the following high resolving power ultraprecise computer numerical control machining tool of resolving power 0.01 μ m to process at present, carry out the form accuracy of grinding with diamond-impregnated wheel after the machine-shaping, and then polishing is finish-machined to optical mirror plane to obtain to be expected; To of the processing of micro lens die mould with mould, require strictness more, need further to improve precision and alleviate the vestige of grinding.Because the grinding of adopting after WC, the machine-shaping of SiC optics the molding die at present and glossing working (machining) efficiency is low, surface quality is poor, roughness generally is difficult to be lower than 10nm, and the sublayer damage in the ubiquity processing make reduce the work-ing life of mould.
Summary of the invention
The objective of the invention is for after the optics molding die machine-shaping that solves present SiC, WC material, adopt grinding and glossing to process the problem that working (machining) efficiency is low, surface quality is poor, the damage of meeting generation sublayer make the reduction in work-ing life of mould of existence, the atmosphere plasma chemical process method of a kind of WC, SiC optics molding die is provided.
The device of realization the inventive method is made up of plasma generator, radio-frequency power supply, impedance matching box, cooling-water pump, plasma gas bottle, reactant gases bottle, first flow controller, second flow director, gas mixing chamber, pneumatic tube, oxygen cylinder and the 3rd flow director
Plasma generator comprises and being parallel to each other or the negative electrode and the anode of coaxial package, negative electrode and anodic outside surface are coated with insulating film respectively, negative electrode and anodic internal cavities pass through an outlet of pipeline connection cooling-water pump respectively, negative electrode and corresponding respectively negative pole and the positive pole that is connected the radio-frequency power supply after the impedance matching box impedance matching of anode, the exit end of the pneumatic tube that is communicated with gas mixing chamber is positioned at the relative formed zone with anode of negative electrode, the plasma gas bottle is communicated with gas mixing chamber by second flow director, the reactant gases bottle is communicated with gas mixing chamber by the first flow controller, and oxygen cylinder is communicated with gas mixing chamber by the 3rd flow director; Processing steps is:
Step 1, open cooling-water pump, make the negative electrode of plasma generator and anodic internal cavities feed recirculated cooling water;
Step 2, preheating radio-frequency power supply, first flow controller, second flow director and the 3rd flow director, be 5-10 minute warm up time;
Step 3, finish preheating after, open plasma gas bottle, reactant gases bottle and oxygen cylinder, plasma gas bottle ionic medium body gas is He or Ar, reactant gases is a fluoro-gas in the reactant gases bottle, regulate the flow of plasma gas, reactant gases and oxygen respectively by first flow controller, second flow director and the 3rd flow director, the flow of plasma gas is 1 liter/minute～40 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 10～1: 1000;
Step 4, between the negative electrode of plasma generator and anode, be full of plasma gas, behind the mixed gas of reactant gases and oxygen, start radio-frequency power supply, progressively increase the output rating of radio-frequency power supply, make output rating reach 200W～800W, controlling reflective power simultaneously is zero, continual and steady feeding mixed gas in the process of radio-frequency power supply work, make a stable plasma gas electrical discharge zone is arranged between negative electrode and the anode, be of the feeding of the plasma gas of discharge condition, form plasma jet in the exit of plasma generator along with mixed gas;
The surface to be machined of WC or SiC optics molding die placed allow it that chemical reaction takes place in the plasma jet zone, the die surface of formation has accurate Gauss's curve form, and cross section curve has following form:
f ( x ) = - a e - x 2 / c
Gauss's toroidal function of the mould that the unit time processes is:
f ( x , y ) = - a e - ( x 2 + y 2 ) / c
X in the formula: the vertical line of Mould Machining cross section lower-most point and the intersection point of mould original plane are the X-coordinate of initial point;
Y: the vertical line of Mould Machining cross section lower-most point and the intersection point of mould original plane are the ordinate zou of initial point;
A, c: Gauss's curved surface parameter;
Original shape according to mould reaches the removal amount that the shape need that finally will reach calculates the die surface material, relies on convolution theorem to resolve the residence time function, and the removal amount of die surface material satisfies following formula 1:
h ( x , y ) = f ( x , y ) * g ( x , y ) = ∫ ∫ - a e - ( u 2 + v 2 ) / c g ( x - u , y - v ) dudv - - - 1
G in the formula (x, y): the residence time function;
U, v: be the amount of introducing when in mathematics, doing convolution;
Formula 1 is carried out fourier transformation obtains formula 2:
H(ω x，ω y)＝F(ω x，ω y)·G(ω x，ω y)， 2
Formula 2 distortion are obtained formula 3:G (ω x, ω y)=H (ω x, ω y)/F (ω x, ω y), 3
Formula 3 is carried out inverse Fourier transform, obtain residence time function g (x, y);
By residence time function g (x, y) determine the time that WC or SiC optics molding die are resident in plasma jet zone, finish face type processing WC or SiC optics molding die by the requirement selection of thick forming process, precise forming processing, the finishing of ultraprecise face type or the processing of ultraphotic sliding surface type of WC or SiC optics molding die or staged repeating step three and step 4.
Advantage of the present invention is:
The present invention realizes precision work to the surface of the SiC after the machine-shaping, WC optics molding die in the mode of chemical reaction, can realize efficient removal to the die surface material, owing to be contactless chemical reaction, can realize the material removal of isotropic atom level, form the optical surface of ultraprecise, ultra-smooth, surfaceness is reached below the 1nm, and can not cause the damage of top layer and sublayer, effectively improve the durability of mould; Adopt the present invention can realize that it can replace ultraprecise grinding machine and super-precision grinding casting machine tool simultaneously to the whole technological process of the SiC after the machine-shaping, WC optics molding die surface finishing, and realize the high precision of mould is processed by control process parameters; Working method of the present invention is the pure chemistry process, does not have the effect of operating force, therefore, greatly reduces the requirement to the precision and the rigidity of mechanical system, has reduced system cost; The present invention passes through the precision work of the method realization of oxidizing reaction to the surface of SiC, WC optics molding die under the effect of plasma gas, the chemical reaction that feasible script need be carried out under the temperature condition of thousands of degree just can be realized at normal temperatures, the reaction process stable and controllable, and plasma body produces under open atmospheric condition, avoid employing vacuum reaction container, greatly reduced cost.
Description of drawings
Fig. 1 is an one-piece construction synoptic diagram of realizing the device of the inventive method; Fig. 2 is the sectional view of A-A among Fig. 1; Fig. 3 is the structural representation of the plasma generator of employing in the embodiment eight; Fig. 4 is the sectional view of B-B among Fig. 3; Fig. 5 is the structural representation of the plasma generator of employing in the embodiment nine; Fig. 6 is the section of outline figure that surfacing is removed in the Mould Machining process, and X-coordinate is represented the position of workpiece surface, and ordinate zou is represented the processing removal degree of depth; Fig. 7 is the technological process flow process figure that the present invention is used for Mould Machining.
Embodiment
Embodiment one: present embodiment is described below in conjunction with Fig. 1, Fig. 6, the device of realization the inventive method is made up of plasma generator 1, radio-frequency power supply 2, impedance matching box 3, cooling-water pump 4, plasma gas bottle 5, reactant gases bottle 6, first flow controller 7, second flow director 8, gas mixing chamber 9, pneumatic tube 10, oxygen cylinder 11 and the 3rd flow director 12
Plasma generator 1 comprises and being parallel to each other or the negative electrode 1-1 and the anode 1-2 of coaxial package, the outside surface of negative electrode 1-1 and anode 1-2 is coated with insulating film respectively, the internal cavities of negative electrode 1-1 and anode 1-2 passes through an outlet of pipeline connection cooling-water pump 4 respectively, negative electrode 1-1 and corresponding respectively negative pole and the positive pole that is connected the radio-frequency power supply 2 after impedance matching box 3 impedance matchings of anode 1-2, the exit end of the pneumatic tube 10 that is communicated with gas mixing chamber 9 is positioned at the relative formed zone with anode 1-2 of negative electrode 1-1, plasma gas bottle 5 is communicated with gas mixing chamber 9 by second flow director 8, reactant gases bottle 6 is communicated with gas mixing chamber 9 by first flow controller 7, and oxygen cylinder 11 is communicated with gas mixing chamber 9 by the 3rd flow director 12; It is characterized in that processing steps is:
Step 1, open cooling-water pump 4, make the negative electrode 1-1 of plasma generator 1 and the internal cavities of anode 1-2 feed recirculated cooling water;
Step 2, preheating radio-frequency power supply 2, first flow controller 7, second flow director 8 and the 3rd flow director 12, be 5-10 minute warm up time;
Step 3, finish preheating after, open plasma gas bottle 5, reactant gases bottle 6 and oxygen cylinder 11, plasma gas bottle 5 ionic medium body gases are He or Ar, reactant gases is a fluoro-gas in the reactant gases bottle 6, regulate the flow of plasma gas, reactant gases and oxygen respectively by first flow controller 7, second flow director 8 and the 3rd flow director 12, the flow of plasma gas is 1 liter/minute～40 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 10～1: 1000;
Step 4, between the negative electrode 1-1 of plasma generator 1 and anode 1-2, be full of plasma gas, behind the mixed gas of reactant gases and oxygen, start radio-frequency power supply 2, progressively increase the output rating of radio-frequency power supply 2, make output rating reach 200W～800W, controlling reflective power simultaneously is zero, continual and steady feeding mixed gas in the process of radio-frequency power supply 2 work, make a stable plasma gas electrical discharge zone is arranged between negative electrode 1-1 and the anode 1-2, be of the feeding of the plasma gas of discharge condition, form plasma jet in the exit of plasma generator 1 along with mixed gas;
The surface to be machined of WC or SiC optics molding die placed allow it that chemical reaction takes place in the plasma jet zone, the die surface of formation has accurate Gauss's curve form, and cross section curve has following form:
f ( x ) = - a e - x 2 / c
Gauss's toroidal function of the mould that the unit time processes is:
f ( x , y ) = - a e - ( x 2 + y 2 ) / c
X in the formula: the vertical line of Mould Machining cross section lower-most point and the intersection point of mould original plane are the X-coordinate of initial point;
Y: the vertical line of Mould Machining cross section lower-most point and the intersection point of mould original plane are the ordinate zou of initial point;
A, c: Gauss's curved surface parameter;
Original shape according to mould reaches the removal amount that the shape need that finally will reach calculates the die surface material, relies on convolution theorem to resolve the residence time function, and the removal amount of die surface material satisfies following formula 1:
h ( x , y ) = f ( x , y ) * g ( x , y ) = ∫ ∫ - a e - ( u 2 + v 2 ) / c g ( x - u , y - v ) dudv - - - 1
G in the formula (x, y): the residence time function;
U, v: be the amount of introducing when in mathematics, doing convolution;
Formula 1 is carried out fourier transformation obtains formula 2:
H(ω x，ω y)＝F(ω x，ω y)·G(ω x，ω y)， 2
Formula 2 distortion are obtained formula 3:G (ω x, ω y)=H (ω x, ω y)/F (ω x, ω y), 3
Formula 3 is carried out inverse Fourier transform, obtain residence time function g (x, y);
By residence time function g (x, y) determine the time that WC or SiC optics molding die are resident in plasma jet zone, finish face type processing WC or SiC optics molding die by the requirement selection of thick forming process, precise forming processing, the finishing of ultraprecise face type or the processing of ultraphotic sliding surface type of WC or SiC optics molding die or staged repeating step three and step 4.
After Mould Machining is finished, close radio-frequency power supply 2, plasma gas bottle 5, reactant gases bottle 6, oxygen cylinder 11, first flow controller 7, second flow director 8 and the 3rd flow director 12, take off the mould that has machined then.
Oxygen purity in the present embodiment in the oxygen cylinder 11 is 99.9%, and reactant gases can be CF in the reactant gases bottle 6 4, NF 3Or SF 6Deng fluoro-gas; The parameter a that relates in Gauss's toroidal function, c the point machined parameters computing that provides of match by experiment draw.
Principle of work:
The present invention is based on dielectric impedance condenser coupling radio-frequency plasma discharge principle, the electrode outside surface of plasma generator 1 is coated with insulating film respectively, feeds suitable reactant gases therein, as CF 4, O 2Deng, excite the method that forms dielectric barrier discharge to obtain stable plasma jet by radio-frequency power supply, reactant gases is generated a large amount of excited state fluorine atoms by plasma body ionization.Shape, flow rate of reactive gas, jet by control jet come processing mold in the parameters such as residence time of die surface, have realized efficient, ultraprecise, ultra-smooth processing to the optics molding die of materials such as SiC, WC.
The removal of material generates SiF mainly based on excited state fluorine atom in the plasma jet and workpiece surface atom generation chemical reaction 4, WF 4Deng being the gasiform material at normal temperatures, and successfully remove from workpiece surface.Because whole process is to carry out in open atmospheric environment, the electronics in the plasma body, charged ion are because gas density is very high, and its kinetic energy under electric field quickens will soon have been balanced out by mutual collision.Therefore, this process is an isotropic chemical reaction process, thereby has guaranteed the even removal of workpiece surface material.
Ionization can take place in oxygen under the effect of plasma gas, produce the Sauerstoffatom of excited state, with reactant gases SF 6Be example, SF 6Under the effect of plasma gas, can be decomposed, produce the F of excited state *Atom, F *Atom contacts with the workpiece surface of SiC material with WC, produces following chemical reaction:
0 2+e-＞O ＊+O ＊+e
SF 6+e-＞F *++e
WC+F *+O ＊--＞WF 6↑+CO 2↑
SiC+F *+O ＊--＞SiF 4↑+CO 2↑
Die face type generating principle:
Stable plasma jet contacts concurrent biochemical reaction with die surface, the workpiece surface of formation has accurate Gauss's curve form, and cross section curve has f ( x ) = - a e - x 2 / c Form, mold sections is as shown in Figure 6.Utilize computer control plasma generator 1, make it stop different time, just can realize the processing of complex surface pattern at different positions.This data block that is made of the planar point residence time is exactly resident function, the note do g (x, y).
Embodiment two: the difference of present embodiment and embodiment one is in the step 3 that selecting the flow of plasma gas is 20 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 10; In the step 4, make the power of radio-frequency power supply 2 reach 800W, WC or SiC optics molding die are carried out thick forming process.Other composition and annexation are identical with embodiment one.
Embodiment three: the difference of present embodiment and embodiment two is repeating step three, and selecting the flow of plasma gas is 20 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 20; In the step 4, make the power of radio-frequency power supply 2 reach 500W, WC or SiC optics molding die are carried out precise forming processing.Other composition and annexation are identical with embodiment two.
Embodiment four: the difference of present embodiment and embodiment three is repeating step three again, and selecting the flow of plasma gas is 10 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 40; In the step 4, make the power of radio-frequency power supply 2 reach 400W, WC or SiC optics molding die are carried out the finishing of ultraprecise face type.Other composition and annexation are identical with embodiment three.
Embodiment five: present embodiment is described below in conjunction with Fig. 7, the difference of present embodiment and embodiment four is repeating step three again, selecting the flow of plasma gas is 5 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 100; In the step 4, make the power of radio-frequency power supply 2 reach 200W, the control plasma jet at the uniform velocity passes through with the speed of 2mm/s-6mm/s at die surface, and WC or SiC optics molding die are carried out the processing of ultraphotic sliding surface type.Other composition and annexation are identical with embodiment four.
Provide the technological process of a complete Mould Machining below: 1, that the die blank clamping is good; 2, thick forming process: according to the original shape of blank and final shape need, calculate required material removal amount, determine that processing parameter is: 20 liters/minute of plasma gas flow amounts, the throughput ratio of reactant gases, oxygen and plasma gas is 1: 10, the output rating of radio-frequency power supply 2 is got 800W, and determine the residence time of plasma jet at die surface according to the residence time function, machine tool numerical control system is according to residence time function control lathe mold time resident in the plasma jet zone and finish processing; 3, precise forming processing: according to the error between thick forming process face type and the net shape requirement, calculate required material removal amount, determine that processing parameter is: 20 liters/minute of plasma gas flow amounts, the throughput ratio of reactant gases, oxygen and plasma gas is 1: 20, the output rating of radio-frequency power supply 2 is got 500W, and determine the residence time of plasma jet at die surface according to the residence time function, machine tool numerical control system is according to residence time function control lathe mold time resident in the plasma jet zone and finish processing; 4, ultraprecise face type finishing: according to the error between precise forming machined surface type and the net shape requirement, calculate required material removal amount, determine that processing parameter is, 10 liters/minute of the flows of plasma gas, the throughput ratio of reactant gases, oxygen and plasma gas is 1: 40, the output rating of radio-frequency power supply 2 is got 400W, and determine the residence time of plasma jet at die surface according to the residence time function, machine tool numerical control system is according to residence time function control lathe mold time resident in the plasma jet zone and finish processing; Detect surface precision then,, then repeat this stage process as not meeting the demands; 5, ultraphotic sliding surface type processing: the processing parameter in this stage is got: 5 liters/minute of the flows of plasma gas, the throughput ratio of reactant gases, oxygen and plasma gas is 1: 100, the output rating of radio-frequency power supply 2 is got 200W, and plasma jet at the uniform velocity passes through at die surface; At last surface precision and surface quality are detected packing.
Embodiment six: the difference of present embodiment and embodiment five is that the speed that plasma jet at the uniform velocity passes through at die surface is 4mm/s.Other composition and annexation are identical with embodiment five.
When plasma jet at the uniform velocity passed through die surface with the speed of 4mm/s, it is better relatively that speed is removed in processing, and the processing cross-sectional shape meets Gauss's curved surface.
Embodiment seven: present embodiment is described below in conjunction with Fig. 1 and Fig. 2, present embodiment and embodiment one, two, three, four, five or sixs' difference is that the negative electrode 1-1 of described plasma generator 1 and anode 1-2 are the cylinder of two coaxial packages, inner core is as anode 1-2, and urceolus is as negative electrode 1-1.Other composition and annexation are identical with embodiment one, two, three, four, five or six.
In the present embodiment, the negative electrode 1-1 of plasma generator 1 and anode 1-2 adopt coaxial manner, by between coaxial electrode, feeding the mixture of plasma gas, oxygen and reactant gases, and on coaxial electrode, apply rf power signal, plasma discharge promptly produces between coaxial electrode, plasma body is drawn coaxial electrode with the mobile quilt of plasma gas, thereby forms plasma jet.
Embodiment eight: present embodiment is described below in conjunction with Fig. 3 and Fig. 4, present embodiment and embodiment one, two, three, four, five or sixs' difference is that described plasma generator 1 also comprises dielectric 1-3, negative electrode 1-1 and the anode 1-2 placement that is parallel to each other, form airtight space by dielectric 1-3 sealing between negative electrode 1-1 and the anode 1-2, it is the outlet of the circular hole of 1mm～5mm as plasma jet that the center of negative electrode 1-1 is processed with diameter.Other composition and annexation are identical with embodiment one, two, three, four, five or six.
In the present embodiment, by between parallel pole, feeding the mixture of plasma gas, oxygen and reactant gases, and on parallel pole, apply rf power signal, plasma discharge promptly produces between two electrodes, plasma body flows with plasma gas, drawn electrical discharge zone by the circular hole on the negative electrode 1-1, thereby formed plasma jet.
Embodiment nine: present embodiment is described below in conjunction with Fig. 5, present embodiment and embodiment one, two, three, four, five or sixs' difference is that described plasma generator 1 also comprises insulating ceramic pipe 1-4, negative electrode 1-1 and anode 1-2 parallel sleeve are connected on the outside surface of insulating ceramic pipe 1-4, and the distance between negative electrode 1-1 and the anode 1-2 is 5mm～15mm.Other composition and annexation are identical with embodiment one, two, three, four, five or six.
In the present embodiment, the negative electrode 1-1 of plasma generator 1 is two parallel ring electrodes with anode 1-2.The mixture of plasma gas and reactant gases is fed the inlet end of insulating ceramic pipe 1-4, simultaneously on two electrodes, apply radiofrequency signal, in insulating ceramic pipe 1-4, produce the plasma body that contains active particle, the plasma jet that it is formed for processing after the exit end ejection of insulating ceramic pipe 1-4.
Adopt three kinds of different plasma generators 1 in the embodiment seven, eight, nine, it is to select to use with the different of practical application condition in conjunction with discharge principle.
Embodiment ten: the difference of present embodiment and embodiment nine is that the distance between described negative electrode 1-1 and the anode 1-2 is 10mm.Other composition and annexation are identical with embodiment nine.
The distance of two electrodes is 10mm in the present embodiment, and this makes plasma discharge stable apart from meeting, through the surface roughness value of measuring institute processing work be improve maximum.

Claims (10)

1, the atmosphere plasma chemical process method of a kind of WC, SiC optics molding die, the device of realization present method is made up of plasma generator (1), radio-frequency power supply (2), impedance matching box (3), cooling-water pump (4), plasma gas bottle (5), reactant gases bottle (6), first flow controller (7), second flow director (8), gas mixing chamber (9), pneumatic tube (10), oxygen cylinder (11) and the 3rd flow director (12)
Plasma generator (1) comprises and being parallel to each other or the negative electrode (1-1) and the anode (1-2) of coaxial package, the outside surface of negative electrode (1-1) and anode (1-2) is coated with insulating film respectively, the internal cavities of negative electrode (1-1) and anode (1-2) passes through an outlet of pipeline connection cooling-water pump (4) respectively, negative electrode (1-1) and corresponding respectively negative pole and the positive pole that is connected the radio-frequency power supply (2) after impedance matching box (3) impedance matching of anode (1-2), the exit end of the pneumatic tube (10) that is communicated with gas mixing chamber (9) is positioned at the relative formed zone with anode (1-2) of negative electrode (1-1), plasma gas bottle (5) is communicated with gas mixing chamber (9) by second flow director (8), reactant gases bottle (6) is communicated with gas mixing chamber (9) by first flow controller (7), and oxygen cylinder (11) is communicated with gas mixing chamber (9) by the 3rd flow director (12); It is characterized in that processing steps is:
Step 1, open cooling-water pump (4), make the negative electrode (1-1) of plasma generator (1) and the internal cavities of anode (1-2) feed recirculated cooling water;
Step 2, preheating radio-frequency power supply (2), first flow controller (7), second flow director (8) and the 3rd flow director (12), be 5-10 minute warm up time;
Step 3, after finishing preheating, open plasma gas bottle (5), reactant gases bottle (6) and oxygen cylinder (11), plasma gas bottle (5) ionic medium body gas is He or Ar, reactant gases is a fluoro-gas in the reactant gases bottle (6), by first flow controller (7), second flow director (8) and the 3rd flow director (12) are regulated plasma gas respectively, the flow of reactant gases and oxygen, the flow of plasma gas is 1 liter/minute～40 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 10～1: 1000;
Step 4, between the negative electrode (1-1) of plasma generator (1) and anode (1-2), be full of plasma gas, behind the mixed gas of reactant gases and oxygen, start radio-frequency power supply (2), progressively increase the output rating of radio-frequency power supply (2), make output rating reach 200W～800W, controlling reflective power simultaneously is zero, continual and steady feeding mixed gas in the process of radio-frequency power supply (2) work, make a stable plasma gas electrical discharge zone is arranged between negative electrode (1-1) and the anode (1-2), be of the feeding of the plasma gas of discharge condition, form plasma jet in the exit of plasma generator (1) along with mixed gas;
The surface to be machined of WC or SiC optics molding die placed allow it that chemical reaction takes place in the plasma jet zone, the die surface of formation has accurate Gauss's curve form, and cross section curve has following form:
f ( x ) = - a e - x 2 / c
Gauss's toroidal function of the mould that the unit time processes is:
f ( x , y ) = - a e - ( x 2 + y 2 ) / c
X in the formula: the vertical line of Mould Machining cross section lower-most point and the intersection point of mould original plane are the X-coordinate of initial point;
Y: the vertical line of Mould Machining cross section lower-most point and the intersection point of mould original plane are the ordinate zou of initial point;
A, c: Gauss's curved surface parameter;
Original shape according to mould reaches the removal amount that the shape need that finally will reach calculates the die surface material, relies on convolution theorem to resolve the residence time function, and the removal amount of die surface material satisfies following formula 1:
h ( x , y ) = f ( x , y ) * g ( x , y ) = ∫ ∫ - a e - ( u 2 + v 2 ) / c g ( x - u , y - v ) dudv - - - 1
G in the formula (x, y): the residence time function;
U, v: be the amount of introducing when in mathematics, doing convolution;
Formula 1 is carried out fourier transformation obtains formula 2:
H(ω x，ω y)＝F(ω x，ω y)·G(ω x，ω y)， 2
Formula 2 distortion are obtained formula 3:G (ω x, ω y)=H (ω x, ω y)/F (ω x, ω y), 3
Formula 3 is carried out inverse Fourier transform, obtain residence time function g (x, y);
By residence time function g (x, y) determine the time that WC or SiC optics molding die are resident in plasma jet zone, finish face type processing WC or SiC optics molding die by the requirement selection of thick forming process, precise forming processing, the finishing of ultraprecise face type or the processing of ultraphotic sliding surface type of WC or SiC optics molding die or staged repeating step three and step 4.
2, the atmosphere plasma chemical process method of WC according to claim 1, SiC optics molding die, it is characterized in that: in the step 3, selecting the flow of plasma gas is 20 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 10; In the step 4, make the power of radio-frequency power supply (2) reach 800W, WC or SiC optics molding die are carried out thick forming process.
3, the atmosphere plasma chemical process method of WC according to claim 2, SiC optics molding die, it is characterized in that: repeating step three, selecting the flow of plasma gas is 20 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 20; In the step 4, make the power of radio-frequency power supply (2) reach 500W, WC or SiC optics molding die are carried out precise forming processing.
4, the atmosphere plasma chemical process method of WC according to claim 3, SiC optics molding die, it is characterized in that: repeating step three again, selecting the flow of plasma gas is 10 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 40; In the step 4, make the power of radio-frequency power supply (2) reach 400W, WC or SiC optics molding die are carried out the finishing of ultraprecise face type.
5, the atmosphere plasma chemical process method of WC according to claim 4, SiC optics molding die, it is characterized in that: repeating step three again, selecting the flow of plasma gas is 5 liters/minute, and the throughput ratio of reactant gases and oxygen and plasma gas is 1: 100; In the step 4, make the power of radio-frequency power supply (2) reach 200W, the control plasma jet at the uniform velocity passes through with the speed of 2mm/s-6mm/s at die surface, and WC or SiC optics molding die are carried out the processing of ultraphotic sliding surface type.
6, the atmosphere plasma chemical process method of WC according to claim 5, SiC optics molding die, it is characterized in that: the speed that plasma jet at the uniform velocity passes through at die surface is 4mm/s.
7, according to the atmosphere plasma chemical process method of claim 1,2,3,4,5 or 6 described WC, SiC optics molding die, it is characterized in that: the negative electrode (1-1) and the anode (1-2) of described plasma generator (1) are the cylinder of two coaxial packages, inner core is as anode (1-2), and urceolus is as negative electrode (1-1).
8, according to the atmosphere plasma chemical process method of claim 1,2,3,4,5 or 6 described WC, SiC optics molding die, it is characterized in that: described plasma generator (1) also comprises dielectric (1-3), the placement that is parallel to each other of negative electrode (1-1) and anode (1-2), form airtight space by dielectric (1-3) sealing between negative electrode (1-1) and the anode (1-2), it is the outlet of the circular hole of 1mm～5mm as plasma jet that the center of negative electrode (1-1) is processed with diameter.
9, according to the atmosphere plasma chemical process method of claim 1,2,3,4,5 or 6 described WC, SiC optics molding die, it is characterized in that: described plasma generator (1) also comprises insulating ceramic pipe (1-4), negative electrode (1-1) and anode (1-2) parallel sleeve are connected on the outside surface of insulating ceramic pipe (1-4), and the distance between negative electrode (1-1) and the anode (1-2) is 5mm～15mm.
10, the atmosphere plasma chemical process method of WC according to claim 9, SiC optics molding die is characterized in that: the distance between described negative electrode (1-1) and the anode (1-2) is 10mm.
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