CN102738367A - 发光设备 - Google Patents
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Abstract
公开了一种发光设备。所述发光设备包括:透光基底,具有顶表面和底表面;至少一个半导体发光器件,设置在透光基底的顶表面上;反射部分,设置在半导体发光器件上方,以将来自半导体发光器件的光朝透光基底反射;第一波长转换件,设置在透光基底和反射部分之间。
Description
技术领域
本发明涉及一种使用诸如发光二极管的半导体发光器件作为光源的发光设备。
背景技术
长期以来,被称作“荧光灯”的冷阴极荧光灯经常用作建筑物的室内或室外照明装置。然而,冷阴极荧光灯具有诸如寿命短、耐用性差、光的颜色选择范围有限以及能量效率低的缺点。
虽然发光二极管(LED)具有诸如响应能力良好、能量效率高和寿命长的多种优点,但是发光二极管被有限地用在小尺寸显示装置中的背光源等中。然而,随着高亮度、大功率的白色LED被开发出来,近来LED作为用于照明的发光设备的光源已经受到关注。
用于照明的传统的发光设备包括诸如发光二极管的半导体发光器件以及诸如印刷电路板的基底。半导体发光器件可以直接安装在印刷电路板上,或者可将其中嵌入有半导体发光器件的封装件安装在印刷电路板上。当半导体发光器件安装在基底或封装件上时,在半导体发光器件和基底或封装件之间的边界中损失大量的光。具体地说,在使用诸如蓝宝石基底的透光基底作为半导体生长基底或支撑基底的发光二极管芯片的情况下,大量的光可以穿过透光基底而被使用。然而,光由于被印刷电路板或封装件阻挡而损失。
发明内容
因此,在本领域中存在将附着到诸如基底的任何目标的表面(即,芯片安装表面)上损失的光最小化的需要。
如果使用从半导体发光器件的芯片安装表面出射的光,则从半导体发光器件发射的光的范围显著地变宽。在这种情况下,需要用于将以宽的范围发射的光会聚在期望的区域或空间中的技术。
此外,需要一种新的磷光体布置技术,以通过转换以如上所述的宽范围内发射的光的波长来获得期望颜色的光(例如,白光)。
根据本发明的一方面,提供了一种发光设备,所述发光设备包括:透光基底,具有顶表面和底表面;至少一个半导体发光器件,设置在透光基底的顶表面上;反射部分,设置在半导体发光器件上方,以将来自半导体发光器件的光朝透光基底反射;第一波长转换部件,设置在透光基底和反射部分之间。
第一波长转换部件可形成在反射部分中,反射部分可具有凹入的表面。发光设备还可包括第二波长转换部件,以将未被反射部分反射而是穿过透光基底直接发射的光波长转换。半导体发光器件可使光通过具有透光性的底表面发射,第二波长转换部件可形成在透光基底上,以将通过半导体发光器件的底表面发射的光波长转换。第二波长转换部件可位于透光基底的底表面上,以对应于半导体发光器件的位置。
反射部分可包括在设置在透光基底上方的反射件中,并且反射件和透光基底之间的空间可以是空的。发光设备还可包括包封件,以在所述空间中独立地包封半导体发光器件。可选地,反射部分可包括在设置在透光基底上方的反射件中,反射件和透光基底之间的整个空间可填充有透光树脂。
发光设备还可包括光漫射部件,光漫射部件位于透光基底的底表面上。光漫射部件可以以层的形式形成,以覆盖在透光基底的底表面上的第二波长转换部件。发光设备还可包括防回射层,防回射层设置在第二波长转换部件和透光基底的底表面之间。
可在透光基底的底表面上形成用于提高光提取的凹凸图案。
电极图案可形成在透光基底的顶表面上,以对应于半导体发光器件,并且电极图案具有透光性。
根据本发明的另一方面,提供了一种发光设备,所述发光设备包括:透光基底,具有顶表面和底表面;多个半导体发光器件,布置在透光基底的顶表面上;反射件,将从所述多个半导体发光器件发射的光朝透光基底反射;第一波长转换部件,将由反射件反射的光波长转换;第二波长转换部件,将从半导体发光器件的底表面出射而未被反射件反射的光波长转换。
可在反射件中形成对应于所述多个半导体发光器件的多个第一波长转换部件,可在透光基底的底表面上形成对应于所述多个半导体发光器件的多个第二波长转换部件。可在透光基底的顶表面上对所述多个半导体发光器件中的每个形成两个或更多个电极图案。
多个半导体发光器件可以串联连接。
在说明书和权利要求中使用的指示取向或方向的术语,即“顶表面”、“底表面”、“上侧”、“上部”和“下部”等,仅指示附图中示出的相对位置关系或取向。例如,被描述为“顶表面”的元件实质上可以成为“底表面”。相反,被描述为“底表面”的元件实质上可以成为“顶表面”。
附图说明
图1是示出根据本发明实施例的发光设备的剖视图;
图2是沿图1的线I-I截取的剖视图,图2示出了根据本发明实施例的发光设备;
图3至图9是示出本发明的各种其它实施例的剖视图。
具体实施方式
在下文中,将参照附图详细地描述本发明的优选实施例。仅以说明性的目的提供下面的实施例,从而本领域技术人员能够充分地理解本发明的精神。因此,本发明不限于下面的实施例,而是可以以其它形式实施。在附图中,为了便于示出,可夸大元件的宽度、长度和厚度等。在整个说明书和附图中,相同的标号指示相同的元件。
图1是示出根据本发明实施例的发光设备的剖视图;图2是沿图1的线I-I截取的剖视图,图2示出了根据本发明实施例的发光设备。
参照图1和图2,根据本发明实施例的发光设备1包括玻璃材料的透光基底10、半导体发光器件20、反射件30、第一波长转换部件40和第二波长转换部件50。
透光基底10包括顶表面10a和与顶表面10a相对的底表面10b,半导体发光器件20设置在顶表面10a上。电极图案11a和11b形成在透光基底10的顶表面10a上,从而可将功率施加到半导体发光器件20。电极图案11a和11b可由具有导电性和透明性的材料形成,例如可由氧化铟锡(ITO)形成。可使用印刷技术等来形成电极图案11a和11b。透光基底10不仅可包括玻璃基底,也可以包括具有透光性的各种材料的基底,例如,树脂基底、石英基底、陶瓷基底等。
半导体发光器件20设置在透光基底10的顶表面10a上。在该实施例中,半导体发光器件20包括p型半导体层和n型半导体层,优选地,半导体发光器件20是在p型半导体层和n型半导体层之间的发光区(或活性区)发光的发光二极管(LED)芯片。半导体发光器件20通过具有透光性的粘合材料21附着于透光基底10的顶表面10a。半导体发光器件20具有光不仅能够穿过其顶表面和侧表面发射而且也能够穿过其底表面发射的结构。例如,在包括诸如蓝宝石基底的透光基底作为半导体生长基底或半导体支撑基底的LED芯片的情况下,光不仅能够穿过其顶表面和侧表面发射,也能够穿过其底表面发射。通过半导体发光器件20的底表面发射的光穿过透光粘合材料21和透光基底10向下发射。可考虑形成具有反射性的绝缘层以覆盖半导体发光器件的侧表面。
发光设备1将要发光的方向或照明方向是从透光基底10的底表面向下的方向,即,与半导体发光器件20的安装方向相对的方向。
在该实施例中,多个半导体发光器件20布置在透光基底10的顶表面10a上。半导体发光器件20可以以矩阵阵列布置在透光基底10上。如这些附图中所示,多个半导体发光器件布置为两行。为半导体发光器件20中的一个提供两个电极图案11a和11b。每个半导体发光器件20的电极通过键合线W分别连接到电极图案11a和11b。
反射件30设置在透光基底10上方,以与透光基底10的顶表面10a分隔开。半导体发光器件20位于反射件30和透光基底10之间。反射件30和半导体发光器件20彼此分隔开,并且它们之间的空间是空的。反射件30包括被设置为对应于多个半导体发光器件20的多个反射部分32。反射部分32可由金属材料或高反射树脂材料制成。另外,可通过在树脂表面上沉积金属材料来形成反射部分32。在本实施例中,多个反射部分32中的每个包括被形成为凹曲面形状的反射表面,并用于将从对应的半导体发光器件20发射的光反射至透光基底10。可根据反射部分32的形状和尺寸来改变发光设备1的发光效率,应当考虑半导体发光器件20的光方向角和半导体发光器件20之间的间距等来将反射部分32设计为具有适当的尺寸和形状。反射件30可具有仅使反射部分32的区域反射光或者反射件30全部反射光的性能。
第一波长转换部件40位于透光基底10和反射件30之间的光路中,以使被第一波长转换部件40波长转换的光被反射件30广泛地反射并然后行进至外部,从而有助于减小第一波长转换部件40的布置面积并且还减少磷光体的量。另外,如图中所示,第一波长转换部件40设置在反射件30的反射部分32的光主要会聚的区域中,从而能够以少量的磷光体进一步提高波长转换效率。
除了第一波长转换部件40之外,还设置第二波长转换部件50。第二波长转换部件50设置在透光基底10上。在本实施例中,第二波长转换部件50设置在透光基底10的底表面上,以将从半导体发光器件20的底表面发射的光波长转换。第二波长转换部件50设置在多个半导体发光器件20中的每个的正下方,考虑到从半导体发光器件20的底表面发射的光在穿过透光基底10的同时扩散得更宽,可将第二波长转换部件50形成为具有比半导体发光器件20的底表面的面积稍宽的面积。可通过将磷光体涂覆在透光基底10的底表面10b上的对应区域来形成第二波长转换部件50。
第一波长转换部件40参与由反射件30反射的光的波长转换,第二波长转换部件50参与未被反射件30反射的光的波长转换。因此,可以几乎均匀地将从半导体发光器件20发射的光波长转换,并将波长转换后的光发射至外部。波长转换件40或50可包括石榴石、硅盐酸和/或氮化物磷光体,然而不限于此。
可通过将设置有半导体发光器件20等的透光基底10适当地设置为包括反射件30和第一波长转换部件40的结构来实现根据本实施例的发光设备1。例如,在将包括反射件30等的结构固定地设置在室内或室外的情况下,可通过将该结构与设置有半导体发光器件20等的透光基底10可分离地安装来实现发光设备1。在这种情况下,该结构可设置有电源端子,并可使透光基底10或包括透光基底10的任何其它结构设置有端子或插槽,透光基底10上的电极图案11a和11b通过该端子或插槽电连接到电源端子。然而,可通过预先集成玻璃材料的透光基底10、半导体发光器件20、反射件30、第一波长转换部件40和第二波长转换部件50等来实现发光设备1,然后可将发光设备1安装到包括电源和/或电源端子的其它结构。
在下文中,将描述本发明的各种其它实施例。在下面的实施例的描述中,将省略与前述实施例重复的描述,并可使用用于描述前述实施例的标号来指示与前述实施例的组件相同或相似的组件。
图3是示出根据本发明另一实施例的发光设备的剖视图。
参照图3,根据该实施例的发光设备1还包括在透光基底10的底表面10b上形成为层的形状的光漫射部件16。将光漫射部件16设置为使其堆叠在透光基底10的底表面10b上,从而将通过透光基底10发射至外部的光广泛地漫射。在该实施例中,光漫射部件16包括凹槽,以容纳第二波长转换部件50。可以以各种方式设置光漫射部件16,包括将漫射膜附着到透光基底10的底表面10b的方法,将漫射材料涂覆到透光基底10的底表面10b的方法等。
图4是示出根据本发明又一实施例的发光设备的剖视图。
参照图4,防回射层(anti-retroreflection)17形成在透光基底10的底表面10b上。防回射层17设置在光漫射部件16和第二波长转换部件50与在它们上方的透光基底10之间。防回射层17防止通过透光基底10发射的光被第二波长转换部件50的磷光体或其它元件反射并随后回射至透光基底10。防回射层17可形成在透光基底10的底表面10b上的整个区域,或者可仅形成在对应于半导体发光器件20的区域中。另外,防回射层17可被形成为分布式布拉格反射件(DBR),以反射在防回射层17的特定波段中的光。在这种情况下,由于与第二波长转换部件50的磷光体相遇而回射的光被DBR结构的防回射层17反射,因此未回射至发光设备1的内部。还可在透光基底10的顶表面和电极图案之间形成与上述防回射层相同或相似的防回射层。
图5是示出根据本发明又一实施例的发光设备的剖视图。
参照图5,根据本实施例的发光设备1还包括透光包封件18,每个透光包封件18形成在透光基底10的顶表面10a上,以独立地包封对应的半导体发光器件20和键合线W。包封件18可由例如环氧树脂或硅树脂形成。包封件18也可被形成为使从半导体发光器件20发射的光能够会聚到对应的反射部分32的透镜的形状。
图6是示出根据本发明又一实施例的发光设备的剖视图。
参照图6,与前述实施例相似,根据本实施例的发光设备1包括用于包封半导体发光部件20和键合线W的透光包封件18’,然而透光基底10与反射件30之间的空间被透光包封件18’完全填充。优选地,透光包封件18’的折射率与透光基底10的折射率相近。
图7是示出根据本发明又一实施例的发光设备的剖视图。
参照图7,根据本实施例的发光设备1对每个半导体发光器件20设有两个或更多个具有不同极性的电极图案11a和11b,半导体发光器件20直接安装到电极图案11a和11b中的一个。这可适于在使用竖直LED芯片等作为半导体发光器件的情况,在竖直LED芯片中,对电极中的至少一个位于半导体发光器件下方。在这种情况下,优选地,半导体发光器件20的下电极结构的至少一部分具有透光性。在图7中示出的结构中,有利的是在透光基底10的顶表面和电极图案之间形成防回射层。
图8是示出根据本发明又一实施例的发光设备的剖视图。
参照图8,在根据本实施例的发光设备1中,在透光基底10的顶表面10a上的多个半导体发光器件20串联地连接,从而形成一个串联阵列。与对每个半导体发光器件20设置电极图案11a和11b的前述实施例不同,电极图案仅分别设置在阵列的两端。
图9是示出根据本发明又一实施例的发光设备的剖视图。
参照图9,在根据本实施例的发光设备1中,透光基底10包括顶表面10a和底表面10b,底表面10b利用图案101限定与介质(例如外部空气)的边界,以提高光提取。图案101可以是规则的或者可选地是不规则的。可通过粗糙化、纹理化或蚀刻等来形成图案101。此外,如果利用诸如成型的方法来形成透光基底10,则可以在形成工艺中形成图案101。在一个实施例中,图案101可以是凹凸图案。
虽然在这些附图中未示出,但是反射件30的底表面(见图1至图8)和基底10的顶表面(见图1至图8)彼此不分开,而是可以彼此接触。在该情况下,可通过仅使反射件的一部分区域(例如,凹入的反射件的形成波长转换部件的区域)与基底的顶表面分开,来将半导体发光器件、导电图案以及包封件等设置在凹入的反射件和基底之间的空间中。
根据本发明的实施例,可提高通过半导体发光器件的底表面发射的光的可使用度,从而提高发光效率。另外,通过半导体发光器件的顶表面发射的光以及通过半导体发光器件的底表面发射的光可被均匀地波长转换,从而用于照明等。
Claims (20)
1.一种发光设备,所述发光设备包括:
透光基底,包括顶表面和底表面;
至少一个半导体发光器件,设置在透光基底的顶表面上;
反射部分,设置在半导体发光器件上方,以将来自半导体发光器件的光朝透光基底反射;
第一波长转换件,设置在透光基底和反射部分之间。
2.如权利要求1所述的发光设备,其中,第一波长转换件设置在反射部分中。
3.如权利要求1所述的发光设备,其中,反射部分具有凹入的表面。
4.如权利要求1所述的发光设备,所述发光设备还包括第二波长转换件,以转换穿过透光基底发射的光的波长。
5.如权利要求4所述的发光设备,其中,第二波长转换件设置在透光基底上,以转换通过半导体发光器件的底表面发射的光的波长。
6.如权利要求4所述的发光设备,其中,第二波长转换件在对应于半导体发光器件的位置的位置处设置在透光基底的底表面上。
7.如权利要求1所述的发光设备,其中,反射部分与设置在透光基底上方的反射件一体化,并且反射件和透光基底之间的空间是空的。
8.如权利要求7所述的发光设备,所述发光设备还包括在所述空间中独立地包封半导体发光器件的包封件。
9.如权利要求1所述的发光设备,其中,反射部分与设置在透光基底上方的反射件一体化,反射件和透光基底之间的空间填充有透光树脂。
10.如权利要求1所述的发光设备,所述发光设备还包括光扩散部件,所述光扩散部件设置在透光基底的底表面上。
11.如权利要求6所述的发光设备,所述发光设备还包括光扩散部件,以覆盖在透光基底的底表面上的第二波长转换件。
12.如权利要求11所述的发光设备,所述发光设备还包括防回射层,所述防回射层设置在第二波长转换件和透光基底的底表面之间。
13.如权利要求1所述的发光设备,其中,在透光基底的底表面上设置有凹凸图案。
14.如权利要求1所述的发光设备,其中,电极图案设置在透光基底的顶表面上的对应于半导体发光器件的位置处,并且电极图案是透光的。
15.如权利要求1所述的发光设备,其中,在透光基底的顶表面上的对应于半导体发光器件的位置处设置透光电极图案,并且在透光基底和电极图案之间设置防回射层。
16.一种发光设备,所述发光设备包括:
透光基底,包括顶表面和底表面;
多个半导体发光器件,布置在透光基底的顶表面上;
反射件,将从所述多个半导体发光器件发射的光朝透光基底反射;
第一波长转换件,转换从所述多个半导体发光器件发射的沿第一方向的光的波长;
第二波长转换件,转换从所述多个半导体发光器件发射的沿第二方向的光的波长。
17.如权利要求16所述的发光设备,其中,在反射件中设置对应于所述多个半导体发光器件的多个第一波长转换件,在透光基底的底表面上设置对应于所述多个半导体发光器件的多个第二波长转换件。
18.如权利要求16所述的发光设备,其中,在透光基底的顶表面上对所述多个半导体发光器件中的每个设置两个或更多个电极图案。
19.如权利要求16所述的发光设备,其中,所述多个半导体发光器件串联连接。
20.一种发光设备,所述发光设备包括:
透光基底,包括顶表面和底表面;
半导体发光器件,设置在透光基底的顶表面上;
反射部分,设置在半导体发光器件上方,以将从半导体发光器件发射的光朝透光基底反射;
波长转换件,设置在透光基底的底表面上,以转换穿过透光基底发射的光的波长。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102016224090B4 (de) * | 2016-12-05 | 2024-03-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement, Modul mit mindestens zwei optoelektronischen Bauelementen und Verfahren zum Herstellen eines optoelektronischen Bauelements |
US11257990B2 (en) * | 2017-09-29 | 2022-02-22 | Nichia Corporation | Light emitting device |
US10453827B1 (en) * | 2018-05-30 | 2019-10-22 | Cree, Inc. | LED apparatuses and methods |
US11101410B2 (en) | 2018-05-30 | 2021-08-24 | Creeled, Inc. | LED systems, apparatuses, and methods |
KR20200088950A (ko) * | 2019-01-15 | 2020-07-24 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20210040209A (ko) * | 2019-10-02 | 2021-04-13 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
WO2021164854A1 (en) * | 2020-02-18 | 2021-08-26 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6396082B1 (en) * | 1999-07-29 | 2002-05-28 | Citizen Electronics Co., Ltd. | Light-emitting diode |
US20060203468A1 (en) * | 2004-03-30 | 2006-09-14 | Goldeneye, Inc. | Light recycling illumination systems with wavelength conversion |
CN1835257A (zh) * | 2005-03-18 | 2006-09-20 | 斯坦雷电气株式会社 | 发光器件 |
CN101034728A (zh) * | 2006-03-10 | 2007-09-12 | 东芝照明技术株式会社 | 照明装置 |
CN101212015A (zh) * | 2006-12-26 | 2008-07-02 | 首尔半导体株式会社 | 发光装置 |
US20090167151A1 (en) * | 2007-12-27 | 2009-07-02 | Lumination Llc | Lighting device having illumination, backlighting and display applications |
CN101897040A (zh) * | 2007-12-11 | 2010-11-24 | 皇家飞利浦电子股份有限公司 | 具有混合顶部反射器的侧发射器件 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW561636B (en) * | 2002-10-11 | 2003-11-11 | Highlink Technology Corp | Optoelectronic device |
US6835960B2 (en) * | 2003-03-03 | 2004-12-28 | Opto Tech Corporation | Light emitting diode package structure |
US8063557B2 (en) * | 2003-07-04 | 2011-11-22 | Epistar Corporation | Light-emitting device having wavelength-converting materials therewithin |
KR100646634B1 (ko) * | 2005-06-24 | 2006-11-23 | 서울옵토디바이스주식회사 | 발광 다이오드 |
JP3863169B2 (ja) * | 2005-10-03 | 2006-12-27 | 東芝電子エンジニアリング株式会社 | 発光装置 |
JP2007165811A (ja) * | 2005-12-16 | 2007-06-28 | Nichia Chem Ind Ltd | 発光装置 |
JP2008066691A (ja) * | 2006-03-10 | 2008-03-21 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2010512662A (ja) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 透明発光ダイオード |
JP2008218610A (ja) * | 2007-03-02 | 2008-09-18 | Citizen Electronics Co Ltd | 発光ダイオード |
US8558438B2 (en) * | 2008-03-01 | 2013-10-15 | Goldeneye, Inc. | Fixtures for large area directional and isotropic solid state lighting panels |
KR101047729B1 (ko) | 2008-07-22 | 2011-07-08 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
US20120138874A1 (en) * | 2010-12-02 | 2012-06-07 | Intematix Corporation | Solid-state light emitting devices and signage with photoluminescence wavelength conversion and photoluminescent compositions therefor |
KR101230622B1 (ko) * | 2010-12-10 | 2013-02-06 | 이정훈 | 집단 본딩을 이용한 반도체 디바이스 제조 방법 및 그것에 의해 제조된 반도체 디바이스 |
-
2011
- 2011-03-30 KR KR1020110029093A patent/KR101843501B1/ko active IP Right Grant
-
2012
- 2012-03-29 US US13/434,510 patent/US9837387B2/en active Active
- 2012-03-30 CN CN201210091125.0A patent/CN102738367B/zh active Active
-
2017
- 2017-02-06 US US15/425,630 patent/US20170148772A1/en not_active Abandoned
- 2017-02-06 US US15/425,567 patent/US20170148846A1/en not_active Abandoned
- 2017-02-06 US US15/425,342 patent/US10163975B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6396082B1 (en) * | 1999-07-29 | 2002-05-28 | Citizen Electronics Co., Ltd. | Light-emitting diode |
US20060203468A1 (en) * | 2004-03-30 | 2006-09-14 | Goldeneye, Inc. | Light recycling illumination systems with wavelength conversion |
CN1835257A (zh) * | 2005-03-18 | 2006-09-20 | 斯坦雷电气株式会社 | 发光器件 |
CN101034728A (zh) * | 2006-03-10 | 2007-09-12 | 东芝照明技术株式会社 | 照明装置 |
CN101212015A (zh) * | 2006-12-26 | 2008-07-02 | 首尔半导体株式会社 | 发光装置 |
CN101897040A (zh) * | 2007-12-11 | 2010-11-24 | 皇家飞利浦电子股份有限公司 | 具有混合顶部反射器的侧发射器件 |
US20090167151A1 (en) * | 2007-12-27 | 2009-07-02 | Lumination Llc | Lighting device having illumination, backlighting and display applications |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102938442A (zh) * | 2012-11-27 | 2013-02-20 | 北京半导体照明科技促进中心 | Led封装单元及包括其的led封装系统 |
CN102938442B (zh) * | 2012-11-27 | 2015-06-24 | 北京半导体照明科技促进中心 | Led封装单元及包括其的led封装系统 |
CN110783433A (zh) * | 2019-02-21 | 2020-02-11 | 友达光电股份有限公司 | 发光装置与液晶显示器 |
CN110783433B (zh) * | 2019-02-21 | 2021-05-07 | 友达光电股份有限公司 | 发光装置与液晶显示器 |
CN110190084A (zh) * | 2019-06-04 | 2019-08-30 | 上海天马微电子有限公司 | 显示面板及其制作方法、显示装置 |
CN110190084B (zh) * | 2019-06-04 | 2021-10-15 | 上海天马微电子有限公司 | 显示面板及其制作方法、显示装置 |
Also Published As
Publication number | Publication date |
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KR101843501B1 (ko) | 2018-03-29 |
CN102738367B (zh) | 2017-11-14 |
US20170148957A1 (en) | 2017-05-25 |
KR20120110915A (ko) | 2012-10-10 |
US9837387B2 (en) | 2017-12-05 |
US10163975B2 (en) | 2018-12-25 |
US20120248469A1 (en) | 2012-10-04 |
US20170148772A1 (en) | 2017-05-25 |
US20170148846A1 (en) | 2017-05-25 |
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