JP2017220475A - 発光ダイオードチップの製造方法及び発光ダイオードチップ - Google Patents
発光ダイオードチップの製造方法及び発光ダイオードチップ Download PDFInfo
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- JP2017220475A JP2017220475A JP2016111539A JP2016111539A JP2017220475A JP 2017220475 A JP2017220475 A JP 2017220475A JP 2016111539 A JP2016111539 A JP 2016111539A JP 2016111539 A JP2016111539 A JP 2016111539A JP 2017220475 A JP2017220475 A JP 2017220475A
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- emitting diode
- wafer
- transparent substrate
- diode chip
- light
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000005520 cutting process Methods 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 230000010354 integration Effects 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000004576 sand Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Laser Beam Processing (AREA)
- Led Device Packages (AREA)
Abstract
Description
11 光デバイスウエーハ(ウエーハ)
13 サファイア基板
14 切削ブレード
15 積層体層
17 分割予定ライン
19 LED回路
21 透明基板
21A 透明部材
23,23A,23B 溝
25 一体化ウエーハ
27 切断溝
31,31A,31B 発光ダイオードチップ
Claims (5)
- 発光ダイオードチップの製造方法であって、
結晶成長用の透明基板上に発光層を含む複数の半導体層が形成された積層体層を有し、該積層体層の表面に互いに交差する複数の分割予定ラインによって区画された各領域にそれぞれLED回路が形成されたウエーハを準備するウエーハ準備工程と、
透明基板の表面に該ウエーハの各LED回路に対応して複数の溝を形成する透明基板加工工程と、
該透明基板加工工程を実施した後、該ウエーハの裏面に該透明基板の表面を貼着して一体化ウエーハを形成する一体化工程と、
該ウエーハを該分割予定ラインに沿って該透明基板とともに切断して該一体化ウエーハを個々の発光ダイオードチップに分割する分割工程と、
を備えたことを特徴とする発光ダイオードチップの製造方法。 - 該透明基板加工工程で形成される前記溝の断面形状は三角形状、四角形状、半円形状の何れかである請求項1記載の発光ダイオードチップの製造方法。
- 該透明基板加工工程において、前記溝は切削ブレード、エッチング、サンドブラスト、レーザーの何れかで形成される請求項1記載の発光ダイオードチップの製造方法。
- 該透明基板は、透明セラミックス、光学ガラス、サファイア、透明樹脂の何れかで形成され、該一体化工程において該透明基板は透明接着剤を使用して該ウエーハに貼着される請求項1記載の発光ダイオードチップの製造方法。
- 発光ダイオードチップであって、
表面にLED回路が形成された発光ダイオードと、該発光ダイオードの裏面に貼着された透明部材とを備え、
該透明部材の該発光ダイオードとの貼着面には溝が形成されている発光ダイオードチップ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016111539A JP2017220475A (ja) | 2016-06-03 | 2016-06-03 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
TW106114602A TWI717506B (zh) | 2016-06-03 | 2017-05-03 | 發光二極體晶片的製造方法 |
CN201710396737.3A CN107464872B (zh) | 2016-06-03 | 2017-05-31 | 发光二极管芯片的制造方法和发光二极管芯片 |
KR1020170068417A KR102225477B1 (ko) | 2016-06-03 | 2017-06-01 | 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 |
Applications Claiming Priority (1)
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JP2016111539A JP2017220475A (ja) | 2016-06-03 | 2016-06-03 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
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JP2016111539A Pending JP2017220475A (ja) | 2016-06-03 | 2016-06-03 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2017220475A (ja) |
KR (1) | KR102225477B1 (ja) |
CN (1) | CN107464872B (ja) |
TW (1) | TWI717506B (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
JP2011009305A (ja) * | 2009-06-23 | 2011-01-13 | Koito Mfg Co Ltd | 発光モジュール |
US20120248469A1 (en) * | 2011-03-30 | 2012-10-04 | Seoul Semiconductor Co., Ltd. | Light emitting apparatus |
WO2013114480A1 (ja) * | 2012-02-01 | 2013-08-08 | パナソニック株式会社 | 半導体発光素子、その製造方法及び光源装置 |
JP2014175354A (ja) * | 2013-03-06 | 2014-09-22 | Disco Abrasive Syst Ltd | 発光ダイオード |
WO2015030237A1 (ja) * | 2013-08-30 | 2015-03-05 | 旭化成イーマテリアルズ株式会社 | 半導体発光素子及び光学フィルム |
CN104993029A (zh) * | 2015-07-09 | 2015-10-21 | 佛山市南海区联合广东新光源产业创新中心 | 半导体发光芯片级封装 |
JP2016076685A (ja) * | 2014-10-08 | 2016-05-12 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
Family Cites Families (6)
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KR20070000952A (ko) * | 2005-06-27 | 2007-01-03 | 주식회사 엘지화학 | 열방출이 개선된 전면발광형 발광다이오드 소자의 제조방법 |
JP2009016748A (ja) | 2007-07-09 | 2009-01-22 | Toshiba Discrete Technology Kk | 半導体発光素子及びその製造方法 |
KR20090030704A (ko) * | 2007-09-20 | 2009-03-25 | 삼성모바일디스플레이주식회사 | 유기 전계 발광 표시 장치 셀의 절단 방법 및 이에 의한유기 전계 발광 표시 장치 |
KR101797970B1 (ko) * | 2011-05-23 | 2017-11-15 | 엘지이노텍 주식회사 | 반도체 지지부재 |
CN102832294A (zh) * | 2011-06-13 | 2012-12-19 | 中山市世耀光电科技有限公司 | Led光源的封装方法及led光源 |
KR101426433B1 (ko) * | 2013-04-30 | 2014-08-06 | 주식회사 세미콘라이트 | 반도체 발광소자를 제조하는 방법 |
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2016
- 2016-06-03 JP JP2016111539A patent/JP2017220475A/ja active Pending
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2017
- 2017-05-03 TW TW106114602A patent/TWI717506B/zh active
- 2017-05-31 CN CN201710396737.3A patent/CN107464872B/zh active Active
- 2017-06-01 KR KR1020170068417A patent/KR102225477B1/ko active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
JP2011009305A (ja) * | 2009-06-23 | 2011-01-13 | Koito Mfg Co Ltd | 発光モジュール |
US20120248469A1 (en) * | 2011-03-30 | 2012-10-04 | Seoul Semiconductor Co., Ltd. | Light emitting apparatus |
WO2013114480A1 (ja) * | 2012-02-01 | 2013-08-08 | パナソニック株式会社 | 半導体発光素子、その製造方法及び光源装置 |
JP2014175354A (ja) * | 2013-03-06 | 2014-09-22 | Disco Abrasive Syst Ltd | 発光ダイオード |
WO2015030237A1 (ja) * | 2013-08-30 | 2015-03-05 | 旭化成イーマテリアルズ株式会社 | 半導体発光素子及び光学フィルム |
JP2016076685A (ja) * | 2014-10-08 | 2016-05-12 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
CN104993029A (zh) * | 2015-07-09 | 2015-10-21 | 佛山市南海区联合广东新光源产业创新中心 | 半导体发光芯片级封装 |
Also Published As
Publication number | Publication date |
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TW201812895A (zh) | 2018-04-01 |
CN107464872B (zh) | 2022-03-01 |
KR20170137645A (ko) | 2017-12-13 |
TWI717506B (zh) | 2021-02-01 |
CN107464872A (zh) | 2017-12-12 |
KR102225477B1 (ko) | 2021-03-08 |
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