CN102735688A - Defect detection method - Google Patents
Defect detection method Download PDFInfo
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- CN102735688A CN102735688A CN2012102044452A CN201210204445A CN102735688A CN 102735688 A CN102735688 A CN 102735688A CN 2012102044452 A CN2012102044452 A CN 2012102044452A CN 201210204445 A CN201210204445 A CN 201210204445A CN 102735688 A CN102735688 A CN 102735688A
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Abstract
The invention relates to the field of semiconductor manufacturing, and especially relates to a defect detection method. According to the defect detection method, a plurality of detection areas are arranged on a wafer requiring detection; a defect threshold of each detection area is set according to a process requirement; and the wafer is subjected to defect detection according to the set detection areas and the corresponding defect thresholds. Therefore, good detection areas on the wafer are prevented from being interfered by background signals on wafer areas with poor uniformity of film thickness or line dimension, such that highly precise and flexible defect detection can be carried out.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of defect inspection method.
Background technology
Because the complexity of integrated circuit fabrication process in order to pinpoint the problems timely in process of production and to take appropriate measures, generally all can dispose the optics of some and the defects detection equipment of electronics in manufacture process in continuous raising.
Fig. 1 is the synoptic diagram that in the traditional shortcoming detection method circuit optical imagery is converted into the data gray scale image in the background technology of the present invention; Fig. 2 is in the horizontal direction the synoptic diagram of comparison of adjacent chips in the traditional shortcoming detection method in the background technology of the present invention; Fig. 3 be in the background technology of the present invention in the traditional shortcoming detection method at the synoptic diagram of the comparison of the adjacent chips of vertical direction.
As shown in Figure 1; The principle of work of traditional shortcoming detection method is that the optical imagery on the chip is converted into the data image that can be represented by the bright dull gray of difference rank; The image 11 that is about under the optical microscope is converted into data image 12 characteristics; Relatively detect the position of defective again through the data on the adjacent chips, adopt the comparison technology of the comparison of adjacent chips or adjacent chips in vertical direction as shown in Figure 3 on wafer 1 in the horizontal direction as shown in Figure 2.
But along with the increase of wafer size, wire sizes or film thickness can not be accomplished consistance completely on wafer, and this brings very big difficulty will for the detection of defective.For example, when need detecting the more weak defective of signal, just must set a very little defective threshold value, will all export the difference of original unwanted a lot of backgrounds like this, thereby cause puzzlement for follow-up data analysis as defective.
Summary of the invention
The invention discloses a kind of defect inspection method, wherein, may further comprise the steps:
Step S1: on a wafer to be detected, a plurality of defects detection zone is set according to process requirements;
Step S2: the process requirements according to the different defects surveyed area is provided with each defects detection zone corresponding defects threshold values;
Step S3: the defective threshold values according to setting detects the relevant detection zone.
Above-mentioned defect inspection method wherein, is provided with the corresponding defects threshold values according to wire sizes or film thickness in the defects detection zone among the said step S2.
Above-mentioned defect inspection method, wherein, the minimum unit in said defects detection zone is 3 chips.
Above-mentioned defect inspection method, wherein, the minimum setup unit of said defective threshold values is 3 chips.
In sum; Owing to adopted technique scheme; The present invention proposes a kind of defect inspection method; Through a plurality of surveyed areas being set to detecting wafer, the defective threshold values of each surveyed area is set according to process requirements again, according to surveyed area of setting and corresponding defective threshold values wafer is carried out defects detection at last; Thereby effectively avoid the background signal in the zone of wire sizes on the wafer or film gauge uniformity difference to disturb other good surveyed areas, and then realize high precision and defects detection flexibly.
Description of drawings
Fig. 1 is the synoptic diagram that in the traditional shortcoming detection method circuit optical imagery is converted into the data gray scale image in the background technology of the present invention;
Fig. 2 is in the horizontal direction the synoptic diagram of comparison of adjacent chips in the traditional shortcoming detection method in the background technology of the present invention;
Fig. 3 be in the background technology of the present invention in the traditional shortcoming detection method at the synoptic diagram of the comparison of the adjacent chips of vertical direction;
Fig. 4 is a synoptic diagram of setting a plurality of defects detection zone in the defect inspection method of the present invention;
Fig. 5-the 6th sets the synoptic diagram of defects detection zone and defective threshold values according to film thickness in the defect inspection method of the present invention.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
Fig. 4 is a synoptic diagram of setting a plurality of defects detection zone in the defect inspection method of the present invention;
As shown in Figure 4; On wafer 2 to be detected, defects detection zone 21, defects detection zone 22, defects detection zone 23, defects detection zone 24, defects detection zone 25, defects detection zone 26 and defects detection zone 27 are set according to film thickness or wire sizes; According to the process requirements in each defects detection zone; Like film thickness or wire sizes difference the defective threshold values is set; To carry out the characterization processes of defective, so just can effectively avoid the background signal in the zone of wire sizes on the wafer or film gauge uniformity difference to disturb other good surveyed areas, and then realize a kind of high precision and defect inspection method flexibly; Wherein, the minimum unit of each surveyed area is 3 chips, and the minimum setup unit of defective threshold values is 3 chips.
Fig. 5-the 6th sets the synoptic diagram of defects detection zone and defective threshold values according to film thickness in the defect inspection method of the present invention;
Shown in Fig. 5-6; On through the wafer 3 behind the chemical mechanical milling tech; According to a plurality of scanning areas of the film thickness setting wafer that covers, i.e. surveyed area 31, defects detection zone 32, defects detection zone 33, defects detection zone 34, defects detection zone 35 and defects detection regional 26; And then detection threshold is set according to thickness difference in each surveyed area, so just can effectively avoid the background signal in the zone of wafer upper film thickness evenness difference to disturb other good surveyed areas.
In sum; Owing to adopted technique scheme; The embodiment of the invention proposes a kind of defect inspection method; Through a plurality of surveyed areas being set to detecting wafer, the defective threshold values of each surveyed area is set according to process requirements again, according to surveyed area of setting and corresponding defective threshold values wafer is carried out defects detection at last; Thereby effectively avoid the background signal in the zone of wire sizes on the wafer or film gauge uniformity difference to disturb other good surveyed areas, and then realize high precision and defects detection flexibly.
Through explanation and accompanying drawing, provided the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention has proposed existing preferred embodiment, yet these contents are not as limitation.
For a person skilled in the art, read above-mentioned explanation after, various variations and revise undoubtedly will be obvious.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as.Any and all scope of equal value and contents all should be thought still to belong in the intent of the present invention and the scope in claims scope.
Claims (4)
1. a defect inspection method is characterized in that, may further comprise the steps:
Step S1: on a wafer to be detected, a plurality of defects detection zone is set according to process requirements;
Step S2: the process requirements according to the different defects surveyed area is provided with each defects detection zone corresponding defects threshold values;
Step S3: the defective threshold values according to setting detects the relevant detection zone.
2. defect inspection method according to claim 1 is characterized in that, according to wire sizes or film thickness in the defects detection zone corresponding defects threshold values is set among the said step S2.
3. defect inspection method according to claim 1 and 2 is characterized in that, the minimum unit in said defects detection zone is 3 chips.
4. defect inspection method according to claim 3 is characterized in that, the minimum setup unit of said defective threshold values is 3 chips.
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| CN2012102044452A CN102735688A (en) | 2012-06-20 | 2012-06-20 | Defect detection method |
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| CN2012102044452A CN102735688A (en) | 2012-06-20 | 2012-06-20 | Defect detection method |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102967607A (en) * | 2012-11-28 | 2013-03-13 | 上海华力微电子有限公司 | Defect detection method through optical signal acquisition in different chip areas |
| CN103021897A (en) * | 2012-11-12 | 2013-04-03 | 上海华力微电子有限公司 | Method for detecting semiconductor device electrical property failure |
| CN103065991A (en) * | 2012-11-12 | 2013-04-24 | 上海华力微电子有限公司 | Semiconductor device repeated defect detection method |
| CN103531499A (en) * | 2013-10-21 | 2014-01-22 | 上海华力微电子有限公司 | Method for monitoring matching degree between electron beam scanners |
| CN103646899A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | Wafer defect detection method |
| CN103887203A (en) * | 2014-03-24 | 2014-06-25 | 上海华力微电子有限公司 | Method for using scanning machine program to detect wafers according to floating threshold values |
| CN104122272A (en) * | 2014-08-01 | 2014-10-29 | 上海华力微电子有限公司 | Optical detection method for defects of semiconductor devices |
| CN104134618A (en) * | 2014-06-12 | 2014-11-05 | 京东方科技集团股份有限公司 | Dimension measurement device and dimension measurement method for key figure |
| CN104201124A (en) * | 2014-08-08 | 2014-12-10 | 上海华力微电子有限公司 | Defect detection method for compensating automatic focusing light intensity according to graphical characteristics |
| CN108038841A (en) * | 2017-11-27 | 2018-05-15 | 浙江华睿科技有限公司 | A kind of silicon chip LD defect inspection methods and device |
| CN108387587A (en) * | 2018-01-22 | 2018-08-10 | 京东方科技集团股份有限公司 | Defect inspection method and defect detection equipment |
| CN111239152A (en) * | 2020-01-02 | 2020-06-05 | 长江存储科技有限责任公司 | Wafer detection method, device and equipment |
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Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021897B (en) * | 2012-11-12 | 2015-03-18 | 上海华力微电子有限公司 | Method for detecting semiconductor device electrical property failure |
| CN103021897A (en) * | 2012-11-12 | 2013-04-03 | 上海华力微电子有限公司 | Method for detecting semiconductor device electrical property failure |
| CN103065991A (en) * | 2012-11-12 | 2013-04-24 | 上海华力微电子有限公司 | Semiconductor device repeated defect detection method |
| CN103065991B (en) * | 2012-11-12 | 2015-07-29 | 上海华力微电子有限公司 | The detection method of the repeated defects of semiconductor device |
| CN102967607A (en) * | 2012-11-28 | 2013-03-13 | 上海华力微电子有限公司 | Defect detection method through optical signal acquisition in different chip areas |
| CN103531499A (en) * | 2013-10-21 | 2014-01-22 | 上海华力微电子有限公司 | Method for monitoring matching degree between electron beam scanners |
| CN103531499B (en) * | 2013-10-21 | 2015-12-23 | 上海华力微电子有限公司 | The method of matching degree between monitoring e-beam scanners |
| CN103646899A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | Wafer defect detection method |
| CN103646899B (en) * | 2013-11-29 | 2016-10-12 | 上海华力微电子有限公司 | Wafer defect detection method |
| CN103887203A (en) * | 2014-03-24 | 2014-06-25 | 上海华力微电子有限公司 | Method for using scanning machine program to detect wafers according to floating threshold values |
| CN104134618A (en) * | 2014-06-12 | 2014-11-05 | 京东方科技集团股份有限公司 | Dimension measurement device and dimension measurement method for key figure |
| CN104134618B (en) * | 2014-06-12 | 2017-12-08 | 京东方科技集团股份有限公司 | The size detecting device and size detecting method of a kind of key graphic |
| CN104122272A (en) * | 2014-08-01 | 2014-10-29 | 上海华力微电子有限公司 | Optical detection method for defects of semiconductor devices |
| CN104122272B (en) * | 2014-08-01 | 2019-08-06 | 上海华力微电子有限公司 | The optical detecting method of defects of semiconductor device |
| CN104201124A (en) * | 2014-08-08 | 2014-12-10 | 上海华力微电子有限公司 | Defect detection method for compensating automatic focusing light intensity according to graphical characteristics |
| CN108038841A (en) * | 2017-11-27 | 2018-05-15 | 浙江华睿科技有限公司 | A kind of silicon chip LD defect inspection methods and device |
| CN108038841B (en) * | 2017-11-27 | 2020-06-23 | 浙江华睿科技有限公司 | Silicon wafer LD defect detection method and device |
| CN108387587A (en) * | 2018-01-22 | 2018-08-10 | 京东方科技集团股份有限公司 | Defect inspection method and defect detection equipment |
| CN111239152A (en) * | 2020-01-02 | 2020-06-05 | 长江存储科技有限责任公司 | Wafer detection method, device and equipment |
| CN111239152B (en) * | 2020-01-02 | 2023-11-17 | 长江存储科技有限责任公司 | Wafer detection method, device and equipment |
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Application publication date: 20121017 |