CN108038841A - A kind of silicon chip LD defect inspection methods and device - Google Patents

A kind of silicon chip LD defect inspection methods and device Download PDF

Info

Publication number
CN108038841A
CN108038841A CN201711206191.7A CN201711206191A CN108038841A CN 108038841 A CN108038841 A CN 108038841A CN 201711206191 A CN201711206191 A CN 201711206191A CN 108038841 A CN108038841 A CN 108038841A
Authority
CN
China
Prior art keywords
silicon chip
subregion
image
region
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201711206191.7A
Other languages
Chinese (zh)
Other versions
CN108038841B (en
Inventor
李阳
周璐
李铭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Huaray Technology Co Ltd
Original Assignee
Zhejiang Huaray Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Huaray Technology Co Ltd filed Critical Zhejiang Huaray Technology Co Ltd
Priority to CN201711206191.7A priority Critical patent/CN108038841B/en
Publication of CN108038841A publication Critical patent/CN108038841A/en
Application granted granted Critical
Publication of CN108038841B publication Critical patent/CN108038841B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/11—Region-based segmentation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/136—Segmentation; Edge detection involving thresholding
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/66—Analysis of geometric attributes of image moments or centre of gravity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10004—Still image; Photographic image
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Abstract

The invention discloses a kind of silicon chip LD defect inspection methods and device, the described method includes：The corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, determines the corresponding gradient mean value of each first subregion；For each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default Grads threshold；If so, determine that there are LD defects for silicon chip position corresponding with first subregion.Due in embodiments of the present invention, the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, whether default Grads threshold is more than according to the corresponding gradient mean value of each first subregion, determine that silicon chip position corresponding with each first subregion whether there is LD defects, without strengthening into row threshold division and contrast the corresponding image-region of silicon chip in silicon chip image, the interference of silicon chip background texture is avoided, improves the accuracy of detection of silicon chip LD defects.

Description

A kind of silicon chip LD defect inspection methods and device
Technical field
The present invention relates to technical field of image processing, more particularly to a kind of silicon chip turning stria (LD) defect inspection method and Device.
Background technology
Silicon chip be it is a kind of manufacture solar panel basic material, by silicon rod it is sliced, grinding, polishing etc. process obtain , the quality of silicon chip directly decides the performance of solar panel.The LD defects of silicon chip refer to silicon chip in grinding During produce, there is the texture defect that regular and contrast is higher than background texture, it is specifically bright at equal intervals by one group of group Dark alternate vertical bar line composition.
The detection of existing silicon chip LD defects, mainly extracts gray scale in silicon chip image to silicon chip image into row threshold division Value is more than the pixel of predetermined threshold value, and whether can form connected domain according to the pixel of extraction, it is determined whether there are LD defects. It is heavier yet with the background texture of silicon chip, and the texture of LD defects is not it is obvious that holding very much compared with the background texture difference of silicon chip Easily cause missing inspection.In addition the method that can also use contrast to strengthen when to silicon chip image into row threshold division, but because silicon Piece surface also has background texture, and contrast strengthens the noise jamming that can also improve background texture, further results in accuracy of detection Decline.
The content of the invention
The present invention provides a kind of silicon chip LD defect inspection methods and device, to solve silicon chip LD defects inspection in the prior art The problem of precision of survey is not high.
The invention discloses a kind of silicon chip LD defect inspection methods, the described method includes：
The corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, determines each first son The corresponding gradient mean value in region；
For each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default gradient threshold Value；If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
Further, it is described to determine that the corresponding gradient mean value of each first subregion includes：
For each pixel in each first subregion, according to the pixel the silicon chip image X direction On first gradient value and y direction on the second Grad sum, determine the Grad of the pixel；
For each first subregion, according to the average value of the Grad of each pixel in first subregion, determine The corresponding gradient mean value of first subregion.
Further, the first subregion of default Grads threshold is not more than if there is corresponding gradient mean value, by this First subregion is further included as the second subregion, the method：
For each second subregion, gradient is carried out in each predetermined angle to each pixel in second subregion Projection, determines variance of second subregion in each predetermined angle gradient projection；Judge second subregion each default Whether the variance of angle gradient projection is respectively less than default variance threshold values；If not, determine that silicon chip is corresponding with second subregion There are LD defects for position.
Further, the method further includes：
Record the coordinate in the silicon chip image there are the subregion of LD defects.
Further, it is described by the corresponding image-region of silicon chip in silicon chip image be divided at least two first subregions it Before, the method further includes：
The radius of the corresponding image-region of silicon chip in the silicon chip image is identified, according to default radius factor and the silicon The radius of the corresponding image-region of piece, determines the radius of the corresponding central area of silicon chip；
According to the radius of the corresponding central area of the silicon chip, during silicon chip is corresponding in the corresponding image-region of removal silicon chip Heart district domain, determines the corresponding object region of silicon chip in silicon chip image；
It is described the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions to include：
The corresponding object region of the silicon chip is divided at least two first subregions.
The invention discloses a kind of silicon chip LD defect detecting devices, described device includes：
Determining module is divided, for the corresponding image-region of silicon chip in silicon chip image to be divided at least two first sub-districts Domain, determines the corresponding gradient mean value of each first subregion；
First determining module, for for each first subregion, judging that the corresponding gradient mean value of the first subregion is It is no to be more than default Grads threshold；If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
Further, the division determining module, specifically for for each pixel in each first subregion, root According to the sum of second Grad of the pixel in the first gradient value and y direction in the X direction of the silicon chip image, Determine the Grad of the pixel；For each first subregion, according to the Grad of each pixel in first subregion Average value, determine the corresponding gradient mean value of the first subregion.
Further, described device further includes：
Second determining module, for being not more than the first sub-district of default Grads threshold if there is corresponding gradient mean value Domain, using first subregion as the second subregion, for each second subregion, to each pixel in second subregion Point carries out gradient projection in each predetermined angle, determines variance of second subregion in each predetermined angle gradient projection；Sentence Whether disconnected second subregion is respectively less than default variance threshold values in the variance of each predetermined angle gradient projection；If not, really Determining silicon chip position corresponding with second subregion, there are LD defects.
Further, described device further includes：
Logging modle, for recording the coordinate there are the subregion of LD defects in the silicon chip image.
Further, the division determining module, specifically for identifying the corresponding image district of silicon chip in the silicon chip image The radius in domain, according to default radius factor and the radius of the corresponding image-region of the silicon chip, determines the corresponding center of silicon chip The radius in region；According to the radius of the corresponding central area of the silicon chip, remove silicon chip in the corresponding image-region of silicon chip and correspond to Central area, determine the corresponding object region of silicon chip in silicon chip image；By the corresponding object region of the silicon chip It is divided at least two first subregions.
The invention discloses a kind of silicon chip LD defect inspection methods and device, the described method includes：By silicon in silicon chip image The corresponding image-region of piece is divided at least two first subregions, determines the corresponding gradient mean value of each first subregion；Pin To each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default Grads threshold；If so, Determine that there are LD defects for silicon chip position corresponding with first subregion.Due in embodiments of the present invention, by silicon chip image The corresponding image-region of silicon chip is divided at least two first subregions, is according to the corresponding gradient mean value of each first subregion It is no to be more than default Grads threshold, determine that silicon chip position corresponding with each first subregion whether there is LD defects, without right The corresponding image-region of silicon chip strengthens into row threshold division and contrast in silicon chip image, avoids the dry of silicon chip background texture Disturb, improve the accuracy of detection of silicon chip LD defects.
Brief description of the drawings
Fig. 1 is a kind of silicon chip LD defect inspection process schematic diagrames that the embodiment of the present invention 1 provides；
Fig. 2 is a kind of silicon chip LD defect inspection process schematic diagrames that the embodiment of the present invention 4 provides；
Fig. 3 is the corresponding image-region schematic diagram of a kind of silicon chip that the embodiment of the present invention 5 provides；
Fig. 4 is a kind of silicon chip LD defect detecting device structure diagrams that the embodiment of the present invention 6 provides.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts Embodiment, belongs to the scope of protection of the invention.
Embodiment 1：
Fig. 1 is a kind of silicon chip LD defect inspection process schematic diagrames provided in an embodiment of the present invention, which includes：
S101：The corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, is determined each The corresponding gradient mean value of first subregion.
Silicon chip LD defect inspection methods provided in an embodiment of the present invention, applied to electronic equipment, which can put down The equipment such as plate computer, personal computer (PC), server.
Specifically, because in silicon chip image, the corresponding pixel value section of pixel is being set in the corresponding image-region of silicon chip In fixed pixel value range, therefore it can determine that silicon chip corresponds in silicon chip image according to the pixel value of pixel in silicon chip image Image-region, and according to the quantity of the first subregion set in advance, to the corresponding image-region of silicon chip in silicon chip image into The division of the first subregion of row, wherein the quantity of the first subregion set in advance is at least two.The silicon in silicon chip image , can be according to the quantity of the first subregion set in advance when the corresponding image-region of piece carries out the division of the first subregion, will The corresponding image-region random division of silicon chip is the first subregion of the quantity in silicon chip image, the area of different first subregions It is equal or different；Can also be according to the quantity of the first subregion set in advance, by the corresponding image of silicon chip in silicon chip image Region is divided into the first subregion of the quantity, the area equation of different first subregions.
In addition, because silicon chip under normal conditions only can be in subregion there are LD defects, in order to prevent because of a certain first sub-district Domain area is excessive, causes the missing inspection of silicon chip LD defects, influences the precision of silicon chip LD defects detections, in embodiments of the present invention, also The area of the corresponding image-region of silicon chip and the correspondence of the first subregion quantity can be pre-set.Electronic equipment is by silicon , can be according to the corresponding image-region area of silicon chip, really when the corresponding image-region of piece is divided at least two first subregions The quantity of the first subregion divided is needed calmly, and the first subregion is carried out to the corresponding image-region of silicon chip according to the quantity Division.Preferably, cause the area of the first subregion of part excessive because the corresponding area of the first subregion is different in order to prevent, The precision of silicon chip LD defects detections is influenced, for each basic phase of first subregion area of the corresponding image-region division of silicon chip Deng.
Such as：The area and the correspondence of the first subregion quantity of the corresponding image-region of pre-set silicon chip be： Area is less than 9cm2The quantity of corresponding first subregion is 5, area is more than or equal to 9cm2Less than or equal to 15cm2Corresponding first son The quantity in region is 8, area is more than or equal to 15cm2Less than or equal to 21cm2The quantity of corresponding first subregion is 12, area More than or equal to 21cm2The quantity of corresponding first subregion is 15, and the area of the corresponding image-region of silicon chip is 10cm2, corresponding the The quantity of one subregion is 8, and the corresponding image-region of silicon chip is divided into 8 the first subregions.
After the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, for each first Subregion, according to the pixel value of each pixel in first subregion, determines the ladder of each pixel in first subregion Angle value, and according to the average of the Grad of each pixel in first subregion, determine the corresponding gradient of the first subregion Average.
S102：For each first subregion, it is default to judge whether the corresponding gradient mean value of the first subregion is more than Grads threshold；If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
Because of LD defects, by one group of group, the alternate vertical bar line of light and shade forms at equal intervals, when the corresponding position of silicon wafer of the first subregion There are during LD defects, also the first subregion can be caused there are one group of group alternate vertical bar line of light and shade at equal intervals in the first subregion Corresponding gradient mean value increase.
Specifically, being directed to each first subregion, it is default to judge whether the corresponding gradient mean value of the first subregion is more than Grads threshold, if so, determining that there are LD defects for silicon chip position corresponding with first subregion.Such as：First subregion A Corresponding gradient mean value is that the corresponding gradient mean values of the 15, first subregion B are that the corresponding gradient mean values of the 18, first subregion C are 68, default Grads threshold be 50, the corresponding gradient mean values of the first subregion C are more than default Grads threshold, determine silicon chip and There are LD defects for the corresponding positions of first subregion C.
Due in embodiments of the present invention, the corresponding image-region of silicon chip in silicon chip image being divided at least two first Whether subregion, be more than default Grads threshold according to the corresponding gradient mean value of each first subregion, determine silicon chip with it is each The corresponding position of first subregion whether there is LD defects, without carrying out threshold value to the corresponding image-region of silicon chip in silicon chip image Segmentation and contrast enhancing, avoid the interference of silicon chip background texture, improve the accuracy of detection of silicon chip LD defects.
Embodiment 2：
It is in embodiments of the present invention, described to determine each the on the basis of above-described embodiment in order to improve detection efficiency The corresponding gradient mean value of one subregion includes：
For each pixel in each first subregion, according to the pixel the silicon chip image X direction On first gradient value and y direction on the second Grad sum, determine the Grad of the pixel；
For each first subregion, according to the average value of the Grad of each pixel in first subregion, determine The corresponding gradient mean value of first subregion.
Specifically, for each pixel in each first subregion, can be according to the pixel value of the pixel, and be somebody's turn to do The pixel value of pixel two pixels adjacent in the X direction of silicon chip image, determine the pixel respectively with above-mentioned phase The absolute value of the pixel value of two adjacent pixels, and by the pixel picture with above-mentioned two adjacent pixels respectively The average of the absolute value of plain value difference value, as first gradient value of the pixel in silicon chip image X direction；Of course, Can be by the pixel value of the pixel, with any one pixel adjacent with the pixel in the X direction of silicon chip image Pixel value difference absolute value, as first gradient value of the pixel in silicon chip image X direction.
Similarly, can be according to the pixel value of the pixel, and in silicon for each pixel in each first subregion The pixel value of two pixel adjacent with the pixel on the y direction of picture, determine the pixel respectively with above-mentioned phase The absolute value of the pixel value of two adjacent pixels, and by the pixel picture with above-mentioned two adjacent pixels respectively The average of the absolute value of plain value difference value, as second Grad of the pixel on silicon chip image y direction；Of course, Can be by the pixel value of the pixel, with any one pixel adjacent with the pixel on the y direction of silicon chip image Pixel value difference absolute value, as second Grad of the pixel on silicon chip image y direction.
Determine first gradient value in silicon chip image X direction of each pixel in the first subregion and in silicon chip figure After the second Grad on y direction, for each pixel in the first subregion, according to the pixel in silicon chip image X direction on first gradient value and y direction on the second Grad sum, determine the Grad of the pixel.
Embodiment 3：
In order to further improve accuracy of detection, the reason for preventing because of silicon chip LD defect directions, cause to silicon chip LD defects Missing inspection, on the basis of the various embodiments described above, in embodiments of the present invention, if there is corresponding gradient mean value no more than default Grads threshold the first subregion, further included using first subregion as the second subregion, the method：
For each second subregion, gradient is carried out in each predetermined angle to each pixel in second subregion Projection, determines variance of second subregion in each predetermined angle gradient projection；Judge second subregion each default Whether the variance of angle gradient projection is respectively less than default variance threshold values；If not, determine that silicon chip is corresponding with second subregion There are LD defects for position.
Specifically, be not more than the first subregion of default Grads threshold if there is corresponding gradient mean value, by this One subregion is as the second subregion, for each second subregion, using the center of second subregion as pivot, each Predetermined angle is rotated respectively for rotation angle, and to according to every in postrotational second subregion of each predetermined angle A pixel, carries out gradient projection in the X direction of silicon chip image respectively, calculates second subregion in each preset angle Spend the variance of gradient projection.Preferably, predetermined angle covers 360 degree of scope, such as predetermined angle includes：10 degree, 20 degree, 30 Degree ... 360 degree.Of course, can also determine rotation angle according to default rotary step, such as：Default rotary step is 5 Degree, using 5 degree, 10 degree, 15 degree ... 360 degree as rotation angle.
In addition, in order to improve detection efficiency, the second subregion is calculated in the variance of each predetermined angle gradient projection, also According to second subregion in the gradient projection of each predetermined angle second subregion can be determined in each predetermined angle The corresponding gradient projection histogram of gradient projection, and it is corresponding in the gradient projection of each predetermined angle according to second subregion Gradient projection histogram, calculates variance of second subregion in each predetermined angle gradient projection.In embodiments of the present invention, According to image in the gradient projection of predetermined angle, it in the variance of predetermined angle gradient projection is the prior art to calculate image, no longer Repeated.
Each second area is determined after the variance of each predetermined angle gradient projection, for each second area, is judged Whether second subregion is respectively less than default variance threshold values in the variance of each predetermined angle gradient projection；If not, determine There are LD defects for silicon chip position corresponding with second subregion.
Embodiment 4：
Silicon chip LD defective locations are determined for the ease of user, in the various embodiments described above, in embodiments of the present invention, The method further includes：
Record the coordinate in the silicon chip image there are the subregion of LD defects.
If specifically, recorded in silicon chip image there are the subregion of LD defects there are the subregion of LD defects in silicon chip Coordinate in image.
Fig. 2 is a kind of silicon chip LD defect inspection process schematic diagrames provided in an embodiment of the present invention, which includes：
S201：The corresponding image-region of silicon chip in silicon chip image is divided at least two subregions, determines each sub-district The corresponding gradient mean value in domain.
S202：For every sub-regions, judge whether the corresponding gradient mean value of the subregion is more than default Grads threshold, If not, S203 is carried out, if so, carrying out S205.
S203：Gradient projection is carried out in each predetermined angle to each pixel in the subregion, determines the subregion In the variance of each predetermined angle gradient projection.
S204：Judge whether the subregion is respectively less than default variance threshold in the variance of each predetermined angle gradient projection Value, if not, S205 is carried out, if it is, terminating.
S205：Determine that there are LD defects for silicon chip position corresponding with the subregion.
S206：Record the coordinate in the silicon chip image there are the subregion of LD defects.
Embodiment 5：
It is in embodiments of the present invention, described by silicon chip figure on the basis of the various embodiments described above in order to improve detection efficiency The corresponding image-region of silicon chip is divided into before at least two first subregions as in, and the method further includes：
The radius of the corresponding image-region of silicon chip in the silicon chip image is identified, according to default radius factor and the silicon The radius of the corresponding image-region of piece, determines the radius of the corresponding central area of silicon chip；
According to the radius of the corresponding central area of the silicon chip, during silicon chip is corresponding in the corresponding image-region of removal silicon chip Heart district domain, determines the corresponding object region of silicon chip in silicon chip image；
It is described the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions to include：
The corresponding object region of the silicon chip is divided at least two first subregions.
Because LD defects typically occur in silicon chip edge, the central area of silicon chip is usually not in LD defects, in order to improve Detection efficiency, when carrying out LD defects detections to silicon chip, can remove the central area of silicon chip, not to the central area of silicon chip into Row detection.Specifically, electronic equipment identifies the radius in silicon chip correspondence image region in silicon chip image, according to default radius factor And the radius of the corresponding image-region of silicon chip, the radius of the corresponding central area of silicon chip in silicon chip image is determined, according to silicon chip pair The radius for the central area answered, removes in the corresponding image-region of silicon chip using silicon chip correspondence image regional center as the center of circle, silicon chip The radius of corresponding central area is the region of radius, determines the corresponding object region of silicon chip in silicon chip image.Determine silicon Behind the corresponding target area of piece, in order to improve detection efficiency, by the corresponding image-region of silicon chip in silicon chip image be divided into During few two the first subregions, the corresponding object region of silicon chip is only divided at least two first subregions, for pair The detection of LD defects.As shown in figure 3, the radius of the corresponding image-region of silicon chip is 10cm, default radius factor is 0.5, is gone Except using silicon chip correspondence image regional center being center of circle radius as the corresponding center of the silicon chip of 5cm in the corresponding image-region of silicon chip Domain, determines the corresponding object region of silicon chip.
Embodiment 6：
Fig. 4 is a kind of silicon chip LD defect detecting device structure diagrams provided in an embodiment of the present invention, which includes：
Determining module 41 is divided, for the corresponding image-region of silicon chip in silicon chip image to be divided at least two first sons Region, determines the corresponding gradient mean value of each first subregion；
First determining module 42, for for each first subregion, judging the corresponding gradient mean value of the first subregion Whether default Grads threshold is more than；If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
The division determining module 41, specifically for for each pixel in each first subregion, according to the picture The sum of second Grad of the vegetarian refreshments in the first gradient value and y direction in the X direction of the silicon chip image, determining should The Grad of pixel；For each first subregion, it is averaged according to the Grad of each pixel in first subregion Value, determines the corresponding gradient mean value of the first subregion.
Described device further includes：
Second determining module 43, for if there is first son of the corresponding gradient mean value no more than default Grads threshold Region, using first subregion as the second subregion, for each second subregion, to each picture in second subregion Vegetarian refreshments carries out gradient projection in each predetermined angle, determines variance of second subregion in each predetermined angle gradient projection； Judge whether second subregion is respectively less than default variance threshold values in the variance of each predetermined angle gradient projection；If not, Determine that there are LD defects for silicon chip position corresponding with second subregion.
Described device further includes：
Logging modle 44, for recording the coordinate there are the subregion of LD defects in the silicon chip image.
The division determining module 41, half specifically for identifying the corresponding image-region of silicon chip in the silicon chip image Footpath, according to default radius factor and the radius of the corresponding image-region of the silicon chip, determines the corresponding central area of silicon chip Radius；According to the radius of the corresponding central area of the silicon chip, the corresponding center of silicon chip in the corresponding image-region of silicon chip is removed Region, determines the corresponding object region of silicon chip in silicon chip image；The corresponding object region of the silicon chip is divided into At least two first subregions.
The invention discloses a kind of silicon chip LD defect inspection methods and device, the described method includes：By silicon in silicon chip image The corresponding image-region of piece is divided at least two first subregions, determines the corresponding gradient mean value of each first subregion；Pin To each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default Grads threshold；If so, Determine that there are LD defects for silicon chip position corresponding with first subregion.Due in embodiments of the present invention, by silicon chip image The corresponding image-region of silicon chip is divided at least two first subregions, is according to the corresponding gradient mean value of each first subregion It is no to be more than default Grads threshold, determine that silicon chip position corresponding with each first subregion whether there is LD defects, without right The corresponding image-region of silicon chip strengthens into row threshold division and contrast in silicon chip image, avoids the dry of silicon chip background texture Disturb, improve the accuracy of detection of silicon chip LD defects.
For systems/devices embodiment, since it is substantially similar to embodiment of the method, so the comparison of description is simple Single, the relevent part can refer to the partial explaination of embodiments of method.
It should be understood by those skilled in the art that, embodiments herein can be provided as method, system or computer program Product.Therefore, the application can use the reality in terms of complete hardware embodiment, complete software embodiment or combination software and hardware Apply the form of example.Moreover, the application can use the computer for wherein including computer usable program code in one or more The computer program production that usable storage medium is implemented on (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) The form of product.
The application is with reference to the flow according to the method for the embodiment of the present application, equipment (system) and computer program product Figure and/or block diagram describe.It should be understood that it can be realized by computer program instructions every first-class in flowchart and/or the block diagram The combination of flow and/or square frame in journey and/or square frame and flowchart and/or the block diagram.These computer programs can be provided The processors of all-purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices is instructed to produce A raw machine so that the instruction performed by computer or the processor of other programmable data processing devices, which produces, to be used in fact The device for the function of being specified in present one flow of flow chart or one square frame of multiple flows and/or block diagram or multiple square frames.
These computer program instructions, which may also be stored in, can guide computer or other programmable data processing devices with spy Determine in the computer-readable memory that mode works so that the instruction being stored in the computer-readable memory, which produces, to be included referring to Make the manufacture of device, the command device realize in one flow of flow chart or multiple flows and/or one square frame of block diagram or The function of being specified in multiple square frames.
These computer program instructions can be also loaded into computer or other programmable data processing devices so that counted Series of operation steps is performed on calculation machine or other programmable devices to produce computer implemented processing, thus in computer or The instruction performed on other programmable devices is provided and is used for realization in one flow of flow chart or multiple flows and/or block diagram one The step of function of being specified in a square frame or multiple square frames.
Although having been described for the preferred embodiment of the application, those skilled in the art once know basic creation Property concept, then can make these embodiments other change and modification.So appended claims be intended to be construed to include it is excellent Select embodiment and fall into all change and modification of the application scope.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art God and scope.In this way, if these modifications and changes of the present invention belongs to the scope of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to comprising including these modification and variations.

Claims (10)

  1. A kind of 1. silicon chip turning stria LD defect inspection methods, it is characterised in that the described method includes：
    The corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, determines each first subregion Corresponding gradient mean value；
    For each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default Grads threshold； If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
  2. 2. the method as described in claim 1, it is characterised in that described to determine the corresponding gradient mean value bag of each first subregion Include：
    For each pixel in each first subregion, according to the pixel in the X direction of the silicon chip image The sum of the second Grad in first gradient value and y direction, determines the Grad of the pixel；
    For each first subregion, according to the average value of the Grad of each pixel in first subregion, determine this The corresponding gradient mean value of one subregion.
  3. 3. the method as described in claim 1, it is characterised in that be not more than default gradient if there is corresponding gradient mean value First subregion of threshold value, further includes using first subregion as the second subregion, the method：
    For each second subregion, gradient throwing is carried out in each predetermined angle to each pixel in second subregion Shadow, determines variance of second subregion in each predetermined angle gradient projection；Judge second subregion in each preset angle Whether the variance for spending gradient projection is respectively less than default variance threshold values；If not, determine that silicon chip is corresponding with second subregion There are LD defects for position.
  4. 4. the method as described in claim 1 or 3, it is characterised in that the method further includes：
    Record the coordinate in the silicon chip image there are the subregion of LD defects.
  5. 5. the method as described in claim 1, it is characterised in that described to divide the corresponding image-region of silicon chip in silicon chip image Before at least two first subregions, the method further includes：
    The radius of the corresponding image-region of silicon chip in the silicon chip image is identified, according to default radius factor and the silicon chip pair The radius for the image-region answered, determines the radius of the corresponding central area of silicon chip；
    According to the radius of the corresponding central area of the silicon chip, the corresponding center of silicon chip in the corresponding image-region of silicon chip is removed Domain, determines the corresponding object region of silicon chip in silicon chip image；
    It is described the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions to include：
    The corresponding object region of the silicon chip is divided at least two first subregions.
  6. 6. a kind of silicon chip turning stria LD defect detecting devices, it is characterised in that described device includes：
    Determining module is divided, for the corresponding image-region of silicon chip in silicon chip image to be divided at least two first subregions, Determine the corresponding gradient mean value of each first subregion；
    First determining module, for for each first subregion, judging whether the corresponding gradient mean value of the first subregion is big In default Grads threshold；If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
  7. 7. device as claimed in claim 6, it is characterised in that the division determining module, specifically for for each first Each pixel in subregion, according to first gradient value and the longitudinal axis of the pixel in the X direction of the silicon chip image The sum of the second Grad on direction, determines the Grad of the pixel；For each first subregion, according to first sub-district The average value of the Grad of each pixel in domain, determines the corresponding gradient mean value of the first subregion.
  8. 8. device as claimed in claim 6, it is characterised in that described device further includes：
    Second determining module, for being not more than the first subregion of default Grads threshold if there is corresponding gradient mean value, Using first subregion as the second subregion, for each second subregion, to each pixel in second subregion Gradient projection is carried out in each predetermined angle, determines variance of second subregion in each predetermined angle gradient projection；Judge Whether second subregion is respectively less than default variance threshold values in the variance of each predetermined angle gradient projection；If not, determine There are LD defects for silicon chip position corresponding with second subregion.
  9. 9. the device as described in claim 6 or 8, it is characterised in that described device further includes：
    Logging modle, for recording the coordinate there are the subregion of LD defects in the silicon chip image.
  10. 10. device as claimed in claim 6, it is characterised in that the division determining module, specifically for identifying the silicon chip The radius of the corresponding image-region of silicon chip in image, according to the half of default radius factor and the corresponding image-region of the silicon chip Footpath, determines the radius of the corresponding central area of silicon chip；According to the radius of the corresponding central area of the silicon chip, remove silicon chip and correspond to Image-region in the corresponding central area of silicon chip, determine the corresponding object region of silicon chip in silicon chip image；By the silicon The corresponding object region of piece is divided at least two first subregions.
CN201711206191.7A 2017-11-27 2017-11-27 Silicon wafer LD defect detection method and device Active CN108038841B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711206191.7A CN108038841B (en) 2017-11-27 2017-11-27 Silicon wafer LD defect detection method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711206191.7A CN108038841B (en) 2017-11-27 2017-11-27 Silicon wafer LD defect detection method and device

Publications (2)

Publication Number Publication Date
CN108038841A true CN108038841A (en) 2018-05-15
CN108038841B CN108038841B (en) 2020-06-23

Family

ID=62093641

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711206191.7A Active CN108038841B (en) 2017-11-27 2017-11-27 Silicon wafer LD defect detection method and device

Country Status (1)

Country Link
CN (1) CN108038841B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112085708A (en) * 2020-08-19 2020-12-15 浙江华睿科技有限公司 Method and equipment for detecting defects of straight line edge in product outer contour
CN113592801A (en) * 2021-07-23 2021-11-02 浙江大华技术股份有限公司 Method and device for detecting stripe interference of video image
CN113793337A (en) * 2021-11-18 2021-12-14 汶上海纬机车配件有限公司 Locomotive accessory surface abnormal degree evaluation method based on artificial intelligence

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102735688A (en) * 2012-06-20 2012-10-17 上海华力微电子有限公司 Defect detection method
WO2013136666A1 (en) * 2012-03-16 2013-09-19 信越半導体株式会社 Method for producing silicon single crystal wafer
CN103413288A (en) * 2013-08-27 2013-11-27 南京大学 LCD general defect detecting method
CN104990925A (en) * 2015-06-23 2015-10-21 泉州装备制造研究所 Defect detecting method based on gradient multiple threshold value optimization
CN106127779A (en) * 2016-06-29 2016-11-16 上海晨兴希姆通电子科技有限公司 The defect inspection method of view-based access control model identification and system
CN106556610A (en) * 2016-09-30 2017-04-05 中国电子科技集团公司第四十八研究所 A kind of silicon chip stria detection method and detection means

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013136666A1 (en) * 2012-03-16 2013-09-19 信越半導体株式会社 Method for producing silicon single crystal wafer
CN102735688A (en) * 2012-06-20 2012-10-17 上海华力微电子有限公司 Defect detection method
CN103413288A (en) * 2013-08-27 2013-11-27 南京大学 LCD general defect detecting method
CN104990925A (en) * 2015-06-23 2015-10-21 泉州装备制造研究所 Defect detecting method based on gradient multiple threshold value optimization
CN106127779A (en) * 2016-06-29 2016-11-16 上海晨兴希姆通电子科技有限公司 The defect inspection method of view-based access control model identification and system
CN106556610A (en) * 2016-09-30 2017-04-05 中国电子科技集团公司第四十八研究所 A kind of silicon chip stria detection method and detection means

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112085708A (en) * 2020-08-19 2020-12-15 浙江华睿科技有限公司 Method and equipment for detecting defects of straight line edge in product outer contour
CN112085708B (en) * 2020-08-19 2023-07-07 浙江华睿科技股份有限公司 Method and equipment for detecting defects of straight line edges in outer contour of product
CN113592801A (en) * 2021-07-23 2021-11-02 浙江大华技术股份有限公司 Method and device for detecting stripe interference of video image
CN113793337A (en) * 2021-11-18 2021-12-14 汶上海纬机车配件有限公司 Locomotive accessory surface abnormal degree evaluation method based on artificial intelligence
CN113793337B (en) * 2021-11-18 2022-02-08 汶上海纬机车配件有限公司 Locomotive accessory surface abnormal degree evaluation method based on artificial intelligence

Also Published As

Publication number Publication date
CN108038841B (en) 2020-06-23

Similar Documents

Publication Publication Date Title
US8135191B2 (en) Method and device for automatically detecting collimation edges
CN105303189B (en) It is a kind of for detecting the method and device of specific identifier image in presumptive area
JP4657869B2 (en) Defect detection apparatus, image sensor device, image sensor module, image processing apparatus, digital image quality tester, defect detection method, defect detection program, and computer-readable recording medium
CN111027546B (en) Character segmentation method, device and computer readable storage medium
CN108038841A (en) A kind of silicon chip LD defect inspection methods and device
CN109788205B (en) Image adjusting method and device and electronic equipment
KR20140116946A (en) Segmentation for wafer inspection
CN111046862B (en) Character segmentation method, device and computer readable storage medium
CN102175700A (en) Method for detecting welding seam segmentation and defects of digital X-ray images
KR20220139292A (en) Character segmentation method, apparatus and computer readable storage medium
JP6844235B2 (en) Distance measuring device and distance measuring method
CN110443278B (en) Method, device and equipment for detecting thickness abnormality of grid line of solar cell
CN109948393A (en) A kind of localization method and device of bar code
CN112102202A (en) Image segmentation method and image processing device
CN109816621A (en) The detection device and method of abnormal hot spot, electronic equipment
US11709110B2 (en) Method for detecting a defect in a zone of interest of an optical lens
CN114674826A (en) Visual detection method and detection system based on cloth
KR101583430B1 (en) Method and apparatus for processing image
TWI465699B (en) Method of water level measurement
JP6897448B2 (en) Line width estimation programs, devices, and methods
CN109472772B (en) Image stain detection method, device and equipment
CN107092909B (en) Angle detection algorithm based on triangle correspondence theorem
JP4247993B2 (en) Image inspection apparatus, image inspection method, control program, and readable storage medium
CN113469171A (en) Method, device and medium for identifying interest area in SFR test card image
CN116309386B (en) Space target visible light image line segment detection method under complex illumination condition

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: C10, No. 1199 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province

Patentee after: Zhejiang Huarui Technology Co.,Ltd.

Address before: C10, No. 1199 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province

Patentee before: ZHEJIANG HUARAY TECHNOLOGY Co.,Ltd.