CN108038841B - Silicon wafer LD defect detection method and device - Google Patents

Silicon wafer LD defect detection method and device Download PDF

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CN108038841B
CN108038841B CN201711206191.7A CN201711206191A CN108038841B CN 108038841 B CN108038841 B CN 108038841B CN 201711206191 A CN201711206191 A CN 201711206191A CN 108038841 B CN108038841 B CN 108038841B
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CN108038841A (en
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李阳
周璐
李铭
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Zhejiang Huaray Technology Co Ltd
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Abstract

The invention discloses a silicon wafer LD defect detection method and a device, wherein the method comprises the following steps: dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas, and determining a gradient mean value corresponding to each first sub-area; for each first sub-region, judging whether the gradient mean value corresponding to the first sub-region is larger than a preset gradient threshold value; if yes, determining that the LD defect exists in the position of the silicon chip corresponding to the first sub-area. In the embodiment of the invention, the image area corresponding to the silicon wafer in the silicon wafer image is divided into at least two first sub-areas, whether the LD defect exists at the position of the silicon wafer corresponding to each first sub-area is determined according to whether the gradient mean value corresponding to each first sub-area is larger than the preset gradient threshold, and the threshold segmentation and contrast enhancement are not required to be carried out on the image area corresponding to the silicon wafer in the silicon wafer image, so that the interference of background textures of the silicon wafer is avoided, and the detection precision of the LD defect of the silicon wafer is improved.

Description

Silicon wafer LD defect detection method and device
Technical Field
The invention relates to the technical field of image processing, in particular to a method and a device for detecting silicon wafer turning line mark (LD) defects.
Background
The silicon wafer is a basic material for manufacturing the solar cell panel, and is obtained by slicing, grinding and polishing the silicon rod, and the quality of the silicon wafer directly determines the performance of the solar cell panel. The LD defect of the silicon wafer refers to a texture defect which is generated in the grinding process of the silicon wafer, has regularity and has contrast higher than background texture, and specifically consists of a group of straight stripes with equal intervals and alternate light and shade.
The existing detection of the LD defect of the silicon wafer mainly comprises the steps of carrying out threshold segmentation on a silicon wafer image, extracting pixel points with gray values larger than a preset threshold value in the silicon wafer image, and determining whether the LD defect exists according to whether the extracted pixel points can form a connected domain. However, the background texture of the silicon wafer is heavier, and the texture of the LD defect is not very different from the background texture of the silicon wafer, which easily causes missing inspection. In addition, a contrast enhancement method is also used when the threshold segmentation is performed on the silicon wafer image, but because the surface of the silicon wafer also has background textures, the contrast enhancement also improves the noise interference of the background textures, and further causes the detection precision to be reduced.
Disclosure of Invention
The invention provides a method and a device for detecting defects of a silicon wafer LD, which are used for solving the problem of low precision of detection of the defects of the silicon wafer LD in the prior art.
The invention discloses a silicon wafer LD defect detection method, which comprises the following steps:
dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas, and determining a gradient mean value corresponding to each first sub-area;
for each first sub-region, judging whether the gradient mean value corresponding to the first sub-region is larger than a preset gradient threshold value; if yes, determining that the LD defect exists in the position of the silicon chip corresponding to the first sub-area.
Further, the determining the mean value of the gradient corresponding to each first sub-region includes:
for each pixel point in each first sub-area, determining the gradient value of the pixel point according to the sum of a first gradient value of the pixel point in the direction of a transverse axis and a second gradient value of the pixel point in the direction of a longitudinal axis of the silicon wafer image;
and for each first sub-region, determining a gradient mean value corresponding to the first sub-region according to the mean value of the gradient values of each pixel point in the first sub-region.
Further, if there is a first sub-region whose corresponding gradient mean value is not greater than the preset gradient threshold, the first sub-region is regarded as a second sub-region, and the method further includes:
for each second subregion, performing gradient projection on each pixel point in the second subregion at each preset angle, and determining the variance of the gradient projection of the second subregion at each preset angle; judging whether the variance of the gradient projection of each preset angle of the second sub-area is smaller than a preset variance threshold value; and if not, determining that the LD defect exists in the position of the silicon chip corresponding to the second sub-area.
Further, the method further comprises:
and recording the coordinates of the sub-area with the LD defects in the silicon wafer image.
Further, before dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas, the method further includes:
identifying the radius of an image area corresponding to a silicon wafer in the silicon wafer image, and determining the radius of a central area corresponding to the silicon wafer according to a preset radius coefficient and the radius of the image area corresponding to the silicon wafer;
removing the central area corresponding to the silicon wafer in the image area corresponding to the silicon wafer according to the radius of the central area corresponding to the silicon wafer, and determining a target image area corresponding to the silicon wafer in the silicon wafer image;
the dividing of the image area corresponding to the silicon wafer in the silicon wafer image into at least two first sub-areas comprises:
and dividing a target image area corresponding to the silicon wafer into at least two first sub-areas.
The invention discloses a silicon wafer LD defect detection device, which comprises:
the dividing determining module is used for dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas and determining a gradient mean value corresponding to each first sub-area;
the first determining module is used for judging whether the gradient mean value corresponding to each first sub-region is larger than a preset gradient threshold value or not; if yes, determining that the LD defect exists in the position of the silicon chip corresponding to the first sub-area.
Further, the division determining module is specifically configured to determine, for each pixel point in each first sub-region, a gradient value of the pixel point according to a sum of a first gradient value of the pixel point in a horizontal axis direction of the silicon wafer image and a second gradient value of the pixel point in a vertical axis direction; and for each first sub-region, determining a gradient mean value corresponding to the first sub-region according to the mean value of the gradient values of each pixel point in the first sub-region.
Further, the apparatus further comprises:
a second determining module, configured to, if there is a first sub-region whose corresponding gradient mean value is not greater than a preset gradient threshold, use the first sub-region as a second sub-region, perform gradient projection at each preset angle on each pixel point in the second sub-region for each second sub-region, and determine a variance of the gradient projection at each preset angle of the second sub-region; judging whether the variance of the gradient projection of each preset angle of the second sub-area is smaller than a preset variance threshold value; and if not, determining that the LD defect exists in the position of the silicon chip corresponding to the second sub-area.
Further, the apparatus further comprises:
and the recording module is used for recording the coordinates of the sub-area with the LD defects in the silicon wafer image.
Further, the dividing determining module is specifically configured to identify a radius of an image area corresponding to a silicon wafer in the silicon wafer image, and determine a radius of a central area corresponding to the silicon wafer according to a preset radius coefficient and the radius of the image area corresponding to the silicon wafer; removing the central area corresponding to the silicon wafer in the image area corresponding to the silicon wafer according to the radius of the central area corresponding to the silicon wafer, and determining a target image area corresponding to the silicon wafer in the silicon wafer image; and dividing a target image area corresponding to the silicon wafer into at least two first sub-areas.
The invention discloses a silicon wafer LD defect detection method and a device, wherein the method comprises the following steps: dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas, and determining a gradient mean value corresponding to each first sub-area; for each first sub-region, judging whether the gradient mean value corresponding to the first sub-region is larger than a preset gradient threshold value; if yes, determining that the LD defect exists in the position of the silicon chip corresponding to the first sub-area. In the embodiment of the invention, the image area corresponding to the silicon wafer in the silicon wafer image is divided into at least two first sub-areas, whether the LD defect exists at the position of the silicon wafer corresponding to each first sub-area is determined according to whether the gradient mean value corresponding to each first sub-area is larger than the preset gradient threshold, and the threshold segmentation and contrast enhancement are not required to be carried out on the image area corresponding to the silicon wafer in the silicon wafer image, so that the interference of background textures of the silicon wafer is avoided, and the detection precision of the LD defect of the silicon wafer is improved.
Drawings
Fig. 1 is a schematic diagram of a silicon wafer LD defect detection process provided in embodiment 1 of the present invention;
fig. 2 is a schematic diagram of a silicon wafer LD defect detection process provided in embodiment 4 of the present invention;
fig. 3 is a schematic diagram of an image area corresponding to a silicon wafer according to embodiment 5 of the present invention;
fig. 4 is a schematic structural diagram of a silicon wafer LD defect detection apparatus provided in embodiment 6 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
fig. 1 is a schematic diagram of a silicon wafer LD defect detection process provided in an embodiment of the present invention, where the process includes:
s101: dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas, and determining a gradient mean value corresponding to each first sub-area.
The silicon wafer LD defect detection method provided by the embodiment of the invention is applied to electronic equipment, and the electronic equipment can be a tablet Personal Computer (PC), a server and other equipment.
Specifically, in the silicon wafer image, the pixel value interval corresponding to the pixel point in the image region corresponding to the silicon wafer is within the set pixel value range, so that the image region corresponding to the silicon wafer in the silicon wafer image can be determined according to the pixel value of the pixel point in the silicon wafer image, and the image region corresponding to the silicon wafer in the silicon wafer image is divided into the first sub-regions according to the number of the preset first sub-regions, wherein the number of the preset first sub-regions is at least two. When the first sub-regions are divided into the image regions corresponding to the silicon wafers in the silicon wafer image, the image regions corresponding to the silicon wafers in the silicon wafer image can be randomly divided into the first sub-regions according to the preset number of the first sub-regions, and the areas of different first sub-regions are equal or unequal; or equally dividing the image area corresponding to the silicon wafer in the silicon wafer image into the first subregions with the number according to the number of the preset first subregions, wherein the areas of the different first subregions are equal.
In addition, because the silicon wafer usually has only LD defects in a partial region, in order to prevent the accuracy of detecting the LD defects of the silicon wafer from being affected by missed detection of the LD defects of the silicon wafer due to an excessively large area of a certain first sub-region, in the embodiment of the present invention, a corresponding relationship between the area of the image region corresponding to the silicon wafer and the number of the first sub-regions may also be preset. When the electronic device divides the image area corresponding to the silicon wafer into at least two first sub-areas, the number of the first sub-areas to be divided can be determined according to the area of the image area corresponding to the silicon wafer, and the first sub-areas of the image area corresponding to the silicon wafer can be divided according to the number. Preferably, in order to prevent the influence on the accuracy of the defect detection of the silicon wafer LD caused by the overlarge area of part of the first sub-regions due to the different areas corresponding to the first sub-regions, the areas of each of the first sub-regions divided for the image region corresponding to the silicon wafer are substantially equal.
For example: the corresponding relation between the area of the image area corresponding to the preset silicon wafer and the number of the first subregions is as follows: the area is less than 9cm2The number of the corresponding first subregions is 5, and the area is more than or equal to 9cm2Less than or equal to 15cm2The number of the corresponding first subregions is 8, and the area of the corresponding first subregions is more than or equal to 15cm2Less than or equal to 21cm2The number of the corresponding first subregions is 12, and the area is more than or equal to 21cm2The number of the corresponding first sub-regions is 15, and the area of the image region corresponding to the silicon wafer is 10cm2Corresponding to the first sub-areaThe number of the first subregions is 8, and the image regions corresponding to the silicon wafer are equally divided into 8 first subregions.
After an image area corresponding to a silicon wafer in a silicon wafer image is divided into at least two first subregions, for each first subregion, the gradient value of each pixel point in the first subregion is determined according to the pixel value of each pixel point in the first subregion, and the gradient mean value corresponding to the first subregion is determined according to the mean value of the gradient values of each pixel point in the first subregion.
S102: for each first sub-region, judging whether the gradient mean value corresponding to the first sub-region is larger than a preset gradient threshold value; if yes, determining that the LD defect exists in the position of the silicon chip corresponding to the first sub-area.
Because the LD defect is composed of a group of straight stripes with equal intervals and alternating light and dark, when the LD defect exists at the silicon wafer position corresponding to the first sub-region, a group of straight stripes with equal intervals and alternating light and dark also exist in the first sub-region, which results in an increase in the mean gradient value corresponding to the first sub-region.
Specifically, for each first sub-region, whether the gradient mean value corresponding to the first sub-region is greater than a preset gradient threshold value is judged, and if yes, it is determined that there is an LD defect at a position of the silicon wafer corresponding to the first sub-region. For example: the mean value of the gradient corresponding to the first sub-region A is 15, the mean value of the gradient corresponding to the first sub-region B is 18, the mean value of the gradient corresponding to the first sub-region C is 68, the preset gradient threshold value is 50, the mean value of the gradient corresponding to the first sub-region C is larger than the preset gradient threshold value, and it is determined that the LD defect exists at the position of the silicon wafer corresponding to the first sub-region C.
In the embodiment of the invention, the image area corresponding to the silicon wafer in the silicon wafer image is divided into at least two first sub-areas, whether the LD defect exists at the position of the silicon wafer corresponding to each first sub-area is determined according to whether the gradient mean value corresponding to each first sub-area is larger than the preset gradient threshold, and the threshold segmentation and contrast enhancement are not required to be carried out on the image area corresponding to the silicon wafer in the silicon wafer image, so that the interference of background textures of the silicon wafer is avoided, and the detection precision of the LD defect of the silicon wafer is improved.
Example 2:
in order to improve the detection efficiency, on the basis of the foregoing embodiment, in an embodiment of the present invention, the determining the mean value of the gradient corresponding to each first sub-region includes:
for each pixel point in each first sub-area, determining the gradient value of the pixel point according to the sum of a first gradient value of the pixel point in the direction of a transverse axis and a second gradient value of the pixel point in the direction of a longitudinal axis of the silicon wafer image;
and for each first sub-region, determining a gradient mean value corresponding to the first sub-region according to the mean value of the gradient values of each pixel point in the first sub-region.
Specifically, for each pixel point in each first sub-region, according to the pixel value of the pixel point and the pixel values of two adjacent pixel points of the pixel point in the direction of the transverse axis of the silicon wafer image, the absolute value of the difference between the pixel point and the pixel values of the two adjacent pixel points is determined, and the mean value of the absolute values of the difference between the pixel point and the pixel values of the two adjacent pixel points is used as the first gradient value of the pixel point in the direction of the transverse axis of the silicon wafer image; of course, the absolute value of the difference between the pixel value of the pixel point and the pixel value of any pixel point adjacent to the pixel point in the direction of the horizontal axis of the silicon wafer image may also be used as the first gradient value of the pixel point in the direction of the horizontal axis of the silicon wafer image.
Similarly, for each pixel point in each first sub-region, according to the pixel value of the pixel point and the pixel values of two pixel points adjacent to the pixel point in the longitudinal axis direction of the silicon wafer image, determining the absolute value of the difference between the pixel point and the pixel values of the two adjacent pixel points respectively, and taking the mean value of the absolute values of the difference between the pixel point and the pixel values of the two adjacent pixel points respectively as a second gradient value of the pixel point in the longitudinal axis direction of the silicon wafer image; of course, the absolute value of the difference between the pixel value of the pixel point and the pixel value of any pixel point adjacent to the pixel point in the direction of the longitudinal axis of the silicon wafer image may also be used as the second gradient value of the pixel point in the direction of the longitudinal axis of the silicon wafer image.
After a first gradient value of each pixel point in the first sub-area in the direction of the transverse axis of the silicon wafer image and a second gradient value of each pixel point in the direction of the longitudinal axis of the silicon wafer image are determined, aiming at each pixel point in the first sub-area, the gradient value of the pixel point is determined according to the sum of the first gradient value of the pixel point in the direction of the transverse axis of the silicon wafer image and the second gradient value of the pixel point in the direction of the longitudinal axis.
Example 3:
in order to further improve the detection accuracy and prevent the missed detection of the defects of the silicon wafer LD caused by the defect direction of the silicon wafer LD, on the basis of the foregoing embodiments, in an embodiment of the present invention, if there is a first sub-region whose corresponding gradient mean value is not greater than a preset gradient threshold, the first sub-region is taken as a second sub-region, and the method further includes:
for each second subregion, performing gradient projection on each pixel point in the second subregion at each preset angle, and determining the variance of the gradient projection of the second subregion at each preset angle; judging whether the variance of the gradient projection of each preset angle of the second sub-area is smaller than a preset variance threshold value; and if not, determining that the LD defect exists in the position of the silicon chip corresponding to the second sub-area.
Specifically, if a first sub-region exists, the corresponding gradient mean value of which is not greater than a preset gradient threshold, the first sub-region is taken as a second sub-region, for each second sub-region, the center of the second sub-region is taken as a rotation center, each preset angle is taken as a rotation angle to be respectively rotated, gradient projection is respectively performed on each pixel point in the second sub-region rotated according to each preset angle in the direction of the transverse axis of the silicon wafer image, and the variance of the gradient projection of the second sub-region at each preset angle is calculated. Preferably, the preset angle covers a range of 360 degrees, for example, the preset angle includes: 10 degrees, 20 degrees, 30 degrees, … 360 degrees. Of course, the rotation angle may also be determined according to a preset rotation step, for example: the preset rotation step is 5 degrees, and 5 degrees, 10 degrees, 15 degrees and … 360 degrees are taken as rotation angles.
In addition, in order to improve the detection efficiency, when the variance of the gradient projection of the second sub-region at each preset angle is calculated, a gradient projection histogram corresponding to the gradient projection of the second sub-region at each preset angle may be determined according to the gradient projection of the second sub-region at each preset angle, and the variance of the gradient projection of the second sub-region at each preset angle may be calculated according to the gradient projection histogram corresponding to the gradient projection of the second sub-region at each preset angle. In the embodiment of the present invention, it is prior art to calculate the variance of the gradient projection of the image at the preset angle according to the gradient projection of the image at the preset angle, and details are not repeated.
After the variance of each preset angle gradient projection of each second region is determined, judging whether the variance of each preset angle gradient projection of each second sub-region is smaller than a preset variance threshold value or not for each second region; and if not, determining that the LD defect exists in the position of the silicon chip corresponding to the second sub-area.
Example 4:
in order to facilitate a user to determine a defect position of a silicon wafer LD, in the above embodiments, in an embodiment of the present invention, the method further includes:
and recording the coordinates of the sub-area with the LD defects in the silicon wafer image.
Specifically, if there is a sub-region with an LD defect in the silicon wafer image, the coordinates of the sub-region with the LD defect in the silicon wafer image are recorded.
Fig. 2 is a schematic diagram of a silicon wafer LD defect detection process provided in an embodiment of the present invention, where the process includes:
s201: dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two sub-areas, and determining a gradient mean value corresponding to each sub-area.
S202: and for each sub-region, judging whether the gradient mean value corresponding to the sub-region is larger than a preset gradient threshold, if not, performing S203, and if so, performing S205.
S203: and performing gradient projection on each pixel point in the sub-region at each preset angle, and determining the variance of the gradient projection of the sub-region at each preset angle.
S204: and judging whether the variance of the gradient projection of each preset angle of the sub-region is smaller than a preset variance threshold, if not, performing S205, and if so, ending.
S205: and determining that the LD defect exists in the position of the silicon chip corresponding to the sub-region.
S206: and recording the coordinates of the sub-area with the LD defects in the silicon wafer image.
Example 5:
in order to improve the detection efficiency, on the basis of the foregoing embodiments, in an embodiment of the present invention, before dividing an image region corresponding to a silicon wafer in a silicon wafer image into at least two first sub-regions, the method further includes:
identifying the radius of an image area corresponding to a silicon wafer in the silicon wafer image, and determining the radius of a central area corresponding to the silicon wafer according to a preset radius coefficient and the radius of the image area corresponding to the silicon wafer;
removing the central area corresponding to the silicon wafer in the image area corresponding to the silicon wafer according to the radius of the central area corresponding to the silicon wafer, and determining a target image area corresponding to the silicon wafer in the silicon wafer image;
the dividing of the image area corresponding to the silicon wafer in the silicon wafer image into at least two first sub-areas comprises:
and dividing a target image area corresponding to the silicon wafer into at least two first sub-areas.
Because the LD defect usually appears at the edge of the silicon wafer, the LD defect usually does not appear in the central region of the silicon wafer, and in order to improve the detection efficiency, the central region of the silicon wafer can be removed and the central region of the silicon wafer is not detected when the LD defect is detected on the silicon wafer. Specifically, the electronic device identifies the radius of an image area corresponding to a silicon wafer in a silicon wafer image, determines the radius of a central area corresponding to the silicon wafer in the silicon wafer image according to a preset radius coefficient and the radius of the image area corresponding to the silicon wafer, removes an area in the image area corresponding to the silicon wafer, which takes the center of the image area corresponding to the silicon wafer as a circle center and the radius of the central area corresponding to the silicon wafer as a radius, and determines a target image area corresponding to the silicon wafer in the silicon wafer image according to the radius of the central area corresponding to the silicon wafer. After the target area corresponding to the silicon wafer is determined, in order to improve the detection efficiency, when the image area corresponding to the silicon wafer in the silicon wafer image is divided into at least two first sub-areas, only the target image area corresponding to the silicon wafer is divided into at least two first sub-areas for detecting the LD defects. As shown in fig. 3, the radius of the image area corresponding to the silicon wafer is 10cm, the preset radius coefficient is 0.5, the central area corresponding to the silicon wafer with the radius of 5cm and the center of the image area corresponding to the silicon wafer is removed, and the target image area corresponding to the silicon wafer is determined.
Example 6:
fig. 4 is a schematic structural diagram of a silicon wafer LD defect detection apparatus provided in an embodiment of the present invention, where the apparatus includes:
the dividing determining module 41 is configured to divide an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas, and determine a gradient mean value corresponding to each first sub-area;
a first determining module 42, configured to determine, for each first sub-region, whether a gradient mean value corresponding to the first sub-region is greater than a preset gradient threshold; if yes, determining that the LD defect exists in the position of the silicon chip corresponding to the first sub-area.
The division determining module 41 is specifically configured to determine, for each pixel point in each first sub-region, a gradient value of the pixel point according to a sum of a first gradient value of the pixel point in a horizontal axis direction and a second gradient value of the pixel point in a vertical axis direction of the silicon wafer image; and for each first sub-region, determining a gradient mean value corresponding to the first sub-region according to the mean value of the gradient values of each pixel point in the first sub-region.
The device further comprises:
a second determining module 43, configured to, if there is a first sub-region whose corresponding gradient mean value is not greater than a preset gradient threshold, use the first sub-region as a second sub-region, perform, for each second sub-region, gradient projection on each pixel point in the second sub-region at each preset angle, and determine a variance of the gradient projection of the second sub-region at each preset angle; judging whether the variance of the gradient projection of each preset angle of the second sub-area is smaller than a preset variance threshold value; and if not, determining that the LD defect exists in the position of the silicon chip corresponding to the second sub-area.
The device further comprises:
and the recording module 44 is used for recording the coordinates of the sub-area with the LD defects in the silicon wafer image.
The dividing determining module 41 is specifically configured to identify a radius of an image area corresponding to a silicon wafer in the silicon wafer image, and determine a radius of a central area corresponding to the silicon wafer according to a preset radius coefficient and the radius of the image area corresponding to the silicon wafer; removing the central area corresponding to the silicon wafer in the image area corresponding to the silicon wafer according to the radius of the central area corresponding to the silicon wafer, and determining a target image area corresponding to the silicon wafer in the silicon wafer image; and dividing a target image area corresponding to the silicon wafer into at least two first sub-areas.
The invention discloses a silicon wafer LD defect detection method and a device, wherein the method comprises the following steps: dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas, and determining a gradient mean value corresponding to each first sub-area; for each first sub-region, judging whether the gradient mean value corresponding to the first sub-region is larger than a preset gradient threshold value; if yes, determining that the LD defect exists in the position of the silicon chip corresponding to the first sub-area. In the embodiment of the invention, the image area corresponding to the silicon wafer in the silicon wafer image is divided into at least two first sub-areas, whether the LD defect exists at the position of the silicon wafer corresponding to each first sub-area is determined according to whether the gradient mean value corresponding to each first sub-area is larger than the preset gradient threshold, and the threshold segmentation and contrast enhancement are not required to be carried out on the image area corresponding to the silicon wafer in the silicon wafer image, so that the interference of background textures of the silicon wafer is avoided, and the detection precision of the LD defect of the silicon wafer is improved.
For the system/apparatus embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference may be made to some descriptions of the method embodiments for relevant points.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While the preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (8)

1. A silicon chip turning line mark LD defect detection method is characterized by comprising the following steps:
dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas, and determining a gradient mean value corresponding to each first sub-area;
for each first sub-region, judging whether the gradient mean value corresponding to the first sub-region is larger than a preset gradient threshold value; if yes, determining that the LD defect exists in the position of the silicon chip corresponding to the first sub-area;
if a first sub-region exists, wherein the corresponding gradient mean value of the first sub-region is not larger than a preset gradient threshold value, the first sub-region is taken as a second sub-region, and the method further comprises the following steps:
for each second subregion, performing gradient projection on each pixel point in the second subregion at each preset angle, and determining the variance of the gradient projection of the second subregion at each preset angle; judging whether the variance of the gradient projection of each preset angle of the second sub-area is smaller than a preset variance threshold value; and if not, determining that the LD defect exists in the position of the silicon chip corresponding to the second sub-area.
2. The method of claim 1, wherein the determining the mean value of the gradient for each first sub-region comprises:
for each pixel point in each first sub-area, determining the gradient value of the pixel point according to the sum of a first gradient value of the pixel point in the direction of a transverse axis and a second gradient value of the pixel point in the direction of a longitudinal axis of the silicon wafer image;
and for each first sub-region, determining a gradient mean value corresponding to the first sub-region according to the mean value of the gradient values of each pixel point in the first sub-region.
3. The method of claim 1, wherein the method further comprises:
and recording the coordinates of the sub-area with the LD defects in the silicon wafer image.
4. The method of claim 1, wherein before dividing an image area corresponding to a silicon wafer in the silicon wafer image into at least two first sub-areas, the method further comprises:
identifying the radius of an image area corresponding to a silicon wafer in the silicon wafer image, and determining the radius of a central area corresponding to the silicon wafer according to a preset radius coefficient and the radius of the image area corresponding to the silicon wafer;
removing the central area corresponding to the silicon wafer in the image area corresponding to the silicon wafer according to the radius of the central area corresponding to the silicon wafer, and determining a target image area corresponding to the silicon wafer in the silicon wafer image;
the dividing of the image area corresponding to the silicon wafer in the silicon wafer image into at least two first sub-areas comprises:
and dividing a target image area corresponding to the silicon wafer into at least two first sub-areas.
5. The silicon chip turning line mark LD defect detection device is characterized by comprising:
the dividing determining module is used for dividing an image area corresponding to a silicon wafer in a silicon wafer image into at least two first sub-areas and determining a gradient mean value corresponding to each first sub-area;
the first determining module is used for judging whether the gradient mean value corresponding to each first sub-region is larger than a preset gradient threshold value or not; if yes, determining that the LD defect exists in the position of the silicon chip corresponding to the first sub-area;
wherein the apparatus further comprises:
a second determining module, configured to, if there is a first sub-region whose corresponding gradient mean value is not greater than a preset gradient threshold, use the first sub-region as a second sub-region, perform gradient projection at each preset angle on each pixel point in the second sub-region for each second sub-region, and determine a variance of the gradient projection at each preset angle of the second sub-region; judging whether the variance of the gradient projection of each preset angle of the second sub-area is smaller than a preset variance threshold value; and if not, determining that the LD defect exists in the position of the silicon chip corresponding to the second sub-area.
6. The apparatus according to claim 5, wherein the partition determining module is specifically configured to determine, for each pixel in each first sub-region, a gradient value of the pixel according to a sum of a first gradient value of the pixel in a horizontal axis direction and a second gradient value of the pixel in a vertical axis direction of the silicon wafer image; and for each first sub-region, determining a gradient mean value corresponding to the first sub-region according to the mean value of the gradient values of each pixel point in the first sub-region.
7. The apparatus of claim 5, wherein the apparatus further comprises:
and the recording module is used for recording the coordinates of the sub-area with the LD defects in the silicon wafer image.
8. The apparatus according to claim 5, wherein the partition determining module is specifically configured to identify a radius of an image area corresponding to a silicon wafer in the silicon wafer image, and determine a radius of a center area corresponding to the silicon wafer according to a preset radius coefficient and the radius of the image area corresponding to the silicon wafer; removing the central area corresponding to the silicon wafer in the image area corresponding to the silicon wafer according to the radius of the central area corresponding to the silicon wafer, and determining a target image area corresponding to the silicon wafer in the silicon wafer image; and dividing a target image area corresponding to the silicon wafer into at least two first sub-areas.
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