CN103021897B - Method for detecting semiconductor device electrical property failure - Google Patents
Method for detecting semiconductor device electrical property failure Download PDFInfo
- Publication number
- CN103021897B CN103021897B CN201210451871.6A CN201210451871A CN103021897B CN 103021897 B CN103021897 B CN 103021897B CN 201210451871 A CN201210451871 A CN 201210451871A CN 103021897 B CN103021897 B CN 103021897B
- Authority
- CN
- China
- Prior art keywords
- electrical property
- semiconductor device
- scanning
- gtg
- condition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a method for detecting a semiconductor device electrical property failure. The method for detecting the semiconductor device electrical property failure comprises the following steps of: S1, collecting the gray scale: a. taking the minimum region which can be scanned by an electron beam defect scanner as a scanning unit region, setting as a defect through a program form and detecting the defect, and shooting an electron microscope atlas; and b. taking a semiconductor device as a scanning object, scanning under different conditions, and analyzing the gray scale; S2, screening scanning conditions, and testing the electrical property of the scanning conditions; acquiring a similarity numerical value; and defining the optimal scanning condition; S3, carrying out fixed point gray scale analysis so as to obtain a gray scale data collecting interval with an effective electrical property; and S4, forecasting an electrical property failure region. According to the invention, the gray scale collected data obtained by the electron beam defect scanner and the electrical property testing data are compared, the electrical property failure region and an electrical property effective region can be forecast effectively, which provides a basis for monitoring the advantages and disadvantages of an ion implantation technology, provides a technical support for to-be-adopted improving measures, and provides a powerful guarantee for shortening the research cycle of the semiconductor device.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly relate to a kind of detection method of semiconductor device electrical property failure.
Background technology
Ion implantor is one of implantation equipment of most critical during semiconductor device manufactures, is a kind of by guiding impurity to inject semiconductor wafer, thus changes the equipment of wafer conductivity.Wherein, the degree of depth of impurity injection and the uniformity of density all directly determine the quality injecting wafer.Ion implantor uniformity controlling technology is one of key technology of ion implantor, its operation principle be by based on various control and method of measurement and device by ion by the dose uniformity ground set, be accurately injected into whole wafer surface.
The quality of semiconductor device ion implantation plays crucial effect to semiconductor device quality, along with the development of integrated circuit technology and critical size scaled, such as when below 55nm accomplished by semiconductor device, the uniformity of semiconductor device also depends on the control to ion implantation to a great extent.As wellblock ion implantation, the uniformity etc. of source-drain area ion implantation all can have an impact to the uniformity of resulting devices, sometimes also can produce superposition or cancellation effect.In order to monitoring devices uniformity, normally, electrical method is tested in employing after manufacturing process completes mostly.But the shortcoming of this method is to pinpoint the problems more delayed, is difficult to Timeliness coverage on-line annealing.
Therefore for prior art Problems existing, this case designer is by means of being engaged in the industry experience for many years, and active research improves, so there has been the detection method of a kind of semiconductor device electrical property failure of the present invention.
Summary of the invention
The present invention be directed in prior art, traditional semiconductor device electrical property method of testing is pinpointed the problems more delayed, is difficult to the detection method that the defects such as Timeliness coverage on-line annealing provide a kind of semiconductor device electrical property failure.
In order to solve the problem, the invention provides a kind of detection method of semiconductor device electrical property failure, the detection method of described semiconductor device electrical property failure comprises:
Perform step S1: GTG is collected, described GTG is collected and is comprised further, a, applying electronic harness defects scanner set up fixed point scanning formula in the metal connecting layer of semiconductor device, and choose the interior zone of repetitive in module to be tested, the Minimum Area that can scan using described electron beam flaw scanner is as scanning element region, described scanning element region is set as defect by formula and is detected, and takes electron microscope collection of illustrative plates; B, there is the semiconductor device in described scanning element region as sweep object, and to scan under different conditions, respectively GTG analysis is carried out to the surface sweeping unit area detected under different scanning condition;
Perform step S2: the condition of scanning is screened, the screening of the described condition of scanning comprises further, performs step S21, and the semiconductor device prepared with common process condition carries out testing electrical property for object; Perform step S22, described electrical test data and described GTG are collected data and compares, to obtain similarity numerical value; Perform step S23, the similarity numerical value of described semiconductor device under same scan condition is averaging processing and obtains average similarity numerical value, and the condition of scanning corresponding to the highest described average similarity numerical value is defined as the optimum condition of scanning;
Perform step S3: carry out the analysis of fixed point GTG, the analysis of described fixed point GTG comprises collects data and described electrical test data by the GTG under the described optimum condition of scanning and compares, to obtain electrically effectively GTG collection data interval;
Perform step S4: electrical property failure area forecast, described electron beam flaw scanner is analyzed GTG and is collected data, and shows the position that abnormal GTG collects data, forecasts that described position is electrical property failure region.
Alternatively, described scanning element region is 512 × 512 pixels.
Alternatively, the described different condition of scanning is different voltage, different electric current, different brightness, different contrast.
Alternatively, described electron beam flaw scanner has sensitiveness to ion beam mutation doping.
Alternatively, when the dosage in ion beam implantation process or injection condition change or deviation time, the image gray-scale level data that described electron beam flaw scanner obtains can change thereupon.
Alternatively, it is 50 ~ 100 that described normal GTG collects data area, and the region differing from described normal GTG collection data area 50 ~ 100 is electrical property failure region.
In sum, the present invention collects data by the GTG that electron beam flaw scanner obtains and described electrical test data compares, effectively can forecast electrical property failure region and electrical effective coverage, for monitoring ion implantation technology quality provides foundation, and provide technical support for the Improving Measurements being about to take, for the R&D cycle shortening semiconductor device provides sound assurance.
Accompanying drawing explanation
Figure 1 shows that the flow chart of the detection method of semiconductor device electrical property failure of the present invention;
Be that electron beam flaw scanner is to ion beam mutation doping sensitiveness schematic diagram described in Fig. 2;
Fig. 3 (a) is depicted as scanning element area schematic;
Fig. 3 (b) is depicted as the gray-scale distribution figure of semiconductor device;
Figure 4 shows that the flow chart obtaining the described condition of scanning;
Figure 5 shows that normal GTG collection data area and abnormal GTG collect the schematic diagram of data area.
Embodiment
By describe in detail the invention technology contents, structural feature, reached object and effect, coordinate accompanying drawing to be described in detail below in conjunction with embodiment.
Refer to Fig. 1, Figure 1 shows that the flow chart of the detection method of semiconductor device electrical property failure of the present invention.The detection method of described semiconductor device electrical property failure, comprises the following steps:
Perform step S1: GTG is collected; Particularly, described GTG is collected and is comprised further, a, applying electronic harness defects scanner set up fixed point scanning formula in the metal connecting layer of semiconductor device, and choose the interior zone of repetitive in module to be tested, the Minimum Area that can scan using described electron beam flaw scanner is as scanning element region, described scanning element region is set as defect by formula and is detected, and takes electron microscope collection of illustrative plates; B, there is the semiconductor device in described scanning element region as sweep object, and to scan under different conditions, respectively GTG analysis is carried out to the surface sweeping unit area detected under different scanning condition; Wherein, described scanning element region preferably 512 × 512 pixels.The described different condition of scanning includes but not limited to different voltage, different electric current, different brightness, different contrast.
Perform step S2: the condition of scanning is screened; Particularly, the screening of the described condition of scanning comprises further, performs step S21, and the semiconductor device prepared with common process condition carries out testing electrical property for object; Perform step S22, described electrical test data and described GTG are collected data and compares, to obtain similarity numerical value; Perform step S23, the similarity numerical value of described semiconductor device under same scan condition is averaging processing and obtains average similarity numerical value, and the condition of scanning corresponding to the highest described average similarity numerical value is defined as the optimum condition of scanning.
Perform step S3: carry out the analysis of fixed point GTG; Particularly, the analysis of described fixed point GTG comprises and the GTG under the described optimum condition of scanning is collected data and described electrical test data compares, to obtain electrically effective GTG collection data interval.
Perform step S4: electrical property failure area forecast.Particularly, described electron beam flaw scanner is analyzed GTG and is collected data, and shows the position that abnormal GTG collects data, forecasts that described position is electrical property failure region.
As the specific embodiment of the present invention, in the present invention, described electron beam flaw scanner has sensitiveness to ion beam mutation doping.That is, when the dosage in ion beam implantation process or injection condition change or deviation time, the image gray-scale level data that described electron beam flaw scanner obtains can change thereupon.As shown in Figure 2, be that electron beam flaw scanner is to ion beam mutation doping sensitiveness schematic diagram described in Fig. 2.Significantly, described p-type doped region 11 has different luma data from described N-shaped doped region 12.
Nonrestrictively enumerate, the detection method of described semiconductor device electrical property failure, comprises the following steps:
Perform step S1: GTG is collected; Particularly, as shown in Fig. 3 (a), Fig. 3 (b), Fig. 3 (a) is depicted as scanning element area schematic.Fig. 3 (b) is depicted as the gray-scale distribution figure of semiconductor device.Described GTG is collected and is comprised further, a, applying electronic harness defects scanner set up fixed point scanning formula in the metal connecting layer of semiconductor device, and choose the interior zone of repetitive in module to be tested, the Minimum Area that can scan using described electron beam flaw scanner is as scanning element region, described scanning element region is set as defect by formula and is detected, and takes electron microscope collection of illustrative plates; B, there is the semiconductor device in described scanning element region as sweep object, and to scan under different conditions, respectively GTG analysis is carried out to the surface sweeping unit area detected under different scanning condition; Wherein, described scanning element region preferably 512 × 512 pixels.The described different condition of scanning includes but not limited to different voltage, different electric current, different brightness, different contrast.
Perform step S2: the condition of scanning is screened; Particularly, as shown in Figure 4, Figure 4 shows that the flow chart obtaining the described condition of scanning.The screening of the described condition of scanning comprises further, performs step S21, and the semiconductor device prepared with common process condition carries out testing electrical property for object; Perform step S22, described electrical test data and described GTG are collected data and compares, to obtain similarity numerical value; Perform step S23, the similarity numerical value of described semiconductor device under same scan condition is averaging processing and obtains average similarity numerical value, and the condition of scanning corresponding to the highest described average similarity numerical value is defined as the optimum condition of scanning.As those skilled in the art will readily understand ground, GTG described in described similarity numerical representation method collects the correlation degree of data and described electrical test data, and correlation degree higher then similarity numerical value is larger, and correlation degree lower then similarity numerical value is lower.
Perform step S3: carry out the analysis of fixed point GTG; Particularly, as shown in Figure 5, Figure 5 shows that normal GTG collection data area and abnormal GTG collect the schematic diagram of data area.The analysis of described fixed point GTG comprises collects data and described electrical test data by the GTG under the described optimum condition of scanning and compares, to obtain electrically effective GTG collection data interval.Nonrestrictively enumerate, it is 50 ~ 100 that described normal GTG collects data area 13, and differing from the region that described normal GTG collects data area 50 ~ 100 is electrical property failure region 14.
Perform step S4: electrical property failure area forecast; Described electron beam flaw scanner is analyzed GTG and is collected data, and shows the position that abnormal GTG collects data, forecasts that described position is electrical property failure region.Particularly, in the present invention, the region that described normal GTG collects data area 50 ~ 100 is electrical effective coverage, and the region differing from described normal GTG collection data area 50 ~ 100 is electrical property failure region.
In sum, the present invention collects data by the GTG that electron beam flaw scanner obtains and described electrical test data compares, effectively can forecast electrical property failure region and electrical effective coverage, for monitoring ion implantation technology quality provides foundation, and provide technical support for the Improving Measurements being about to take, for the R&D cycle shortening semiconductor device provides sound assurance.
Those skilled in the art all should be appreciated that, without departing from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thus, if when any amendment or modification fall in the protection range of appended claims and equivalent, think that these amendment and modification are contained in the present invention.
Claims (5)
1. a detection method for semiconductor device electrical property failure, is characterized in that, described method comprises:
Perform step S1: GTG is collected, described GTG is collected and is comprised further, a, applying electronic harness defects scanner sets up fixed point scanning formula in the metal connecting layer of semiconductor device, when the dosage in ion beam implantation process or injection condition change or deviation time, the image gray-scale level data that described electron beam flaw scanner obtains can change thereupon, and choose the interior zone of repetitive in module to be tested, the Minimum Area that can scan using described electron beam flaw scanner is as scanning element region, described scanning element region is set as defect by formula and is detected, and take electron microscope collection of illustrative plates, b, there is the semiconductor device in described scanning element region as sweep object, and to scan under different conditions, respectively GTG analysis is carried out to the surface sweeping unit area detected under different scanning condition,
Perform step S2: the condition of scanning is screened, the screening of the described condition of scanning comprises further, performs step S21, and the semiconductor device prepared with common process condition carries out testing electrical property for object; Perform step S22, described electrical test data and described GTG are collected data and compares, to obtain similarity numerical value; Perform step S23, the similarity numerical value of described semiconductor device under same scan condition is averaging processing and obtains average similarity numerical value, and the condition of scanning corresponding to the highest average similarity numerical value is defined as the optimum condition of scanning;
Perform step S3: carry out the analysis of fixed point GTG, the analysis of described fixed point GTG comprises collects data and described electrical test data by the GTG under the described optimum condition of scanning and compares, to obtain electrically effectively GTG collection data interval;
Perform step S4: electrical property failure area forecast, described electron beam flaw scanner is analyzed GTG and is collected data, and shows the position that abnormal GTG collects data, forecasts that described position is electrical property failure region.
2. the detection method of semiconductor device electrical property failure as claimed in claim 1, it is characterized in that, described scanning element region is 512 × 512 pixels.
3. the detection method of semiconductor device electrical property failure as claimed in claim 1, it is characterized in that, the described different condition of scanning is different voltage, different electric current, different brightness, different contrast.
4. the detection method of semiconductor device electrical property failure as claimed in claim 1, is characterized in that, described electron beam flaw scanner has sensitiveness to ion beam mutation doping.
5. the detection method of semiconductor device electrical property failure as claimed in claim 1, is characterized in that, it is 50 ~ 100 that normal GTG collects data area, and the region differing from described normal GTG collection data area 50 ~ 100 is electrical property failure region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210451871.6A CN103021897B (en) | 2012-11-12 | 2012-11-12 | Method for detecting semiconductor device electrical property failure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210451871.6A CN103021897B (en) | 2012-11-12 | 2012-11-12 | Method for detecting semiconductor device electrical property failure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103021897A CN103021897A (en) | 2013-04-03 |
| CN103021897B true CN103021897B (en) | 2015-03-18 |
Family
ID=47970357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210451871.6A Active CN103021897B (en) | 2012-11-12 | 2012-11-12 | Method for detecting semiconductor device electrical property failure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103021897B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489808B (en) * | 2013-09-22 | 2017-05-10 | 上海华力微电子有限公司 | Electron beam defect detection method capable of carrying out classification according to ion implantation areas |
| CN104124233B (en) * | 2014-07-25 | 2017-02-15 | 上海华力微电子有限公司 | Monitoring structure and method for N-type lightly-doped ion implantation registration |
| CN104124232B (en) * | 2014-07-25 | 2017-02-15 | 上海华力微电子有限公司 | Structure and method for utilizing homojunction to monitor N-type lightly-doped ion implantation alignment degree |
| CN104078337B (en) * | 2014-07-25 | 2017-03-01 | 上海华力微电子有限公司 | P-type is lightly doped monitoring structure and the method for ion implanting Aligning degree |
| CN104124231B (en) * | 2014-07-25 | 2017-03-01 | 上海华力微电子有限公司 | Tie structure and the method that monitoring p-type is lightly doped ion implanting Aligning degree using homotype |
| CN104465441B (en) * | 2014-11-26 | 2019-04-02 | 上海华力微电子有限公司 | A kind of defect inspection method |
| CN106294126B (en) * | 2016-07-22 | 2019-01-04 | 上海华力微电子有限公司 | The automation formula correctness management method and device of SEN ion injection machine table |
| CN109725246B (en) * | 2017-10-31 | 2021-05-11 | 无锡华润上华科技有限公司 | Failure analysis method and system for integrated circuit |
| CN109817538B (en) * | 2019-01-22 | 2021-09-17 | 上海华虹宏力半导体制造有限公司 | SRAM failure online test method |
| CN109946586B (en) * | 2019-02-12 | 2021-06-18 | 长江存储科技有限责任公司 | Method for detecting chip electric connection defect |
| CN116773956A (en) * | 2022-03-08 | 2023-09-19 | 长鑫存储技术有限公司 | Data analysis method, device and storage medium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412168A (en) * | 2011-11-30 | 2012-04-11 | 上海华力微电子有限公司 | Wafer defect defection method and system |
| CN102735688A (en) * | 2012-06-20 | 2012-10-17 | 上海华力微电子有限公司 | Defect detection method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7065239B2 (en) * | 2001-10-24 | 2006-06-20 | Applied Materials, Inc. | Automated repetitive array microstructure defect inspection |
| US8094924B2 (en) * | 2008-12-15 | 2012-01-10 | Hermes-Microvision, Inc. | E-beam defect review system |
-
2012
- 2012-11-12 CN CN201210451871.6A patent/CN103021897B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412168A (en) * | 2011-11-30 | 2012-04-11 | 上海华力微电子有限公司 | Wafer defect defection method and system |
| CN102735688A (en) * | 2012-06-20 | 2012-10-17 | 上海华力微电子有限公司 | Defect detection method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103021897A (en) | 2013-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103021897B (en) | Method for detecting semiconductor device electrical property failure | |
| CN100336063C (en) | System and method for product yield prediction | |
| US11216938B2 (en) | Systems and methods of optimal metrology guidance | |
| US20020195574A1 (en) | Method and apparatus for inspecting a semiconductor device | |
| KR101242319B1 (en) | Charged particle beam device | |
| CN101501516B (en) | Photoconductive based electrical testing of transistor arrays | |
| CN101877326B (en) | Method for manufacturing integrated circuit devices | |
| US20060199287A1 (en) | Method and system for defect detection | |
| CN104425302B (en) | The defect inspection method and device of semiconductor devices | |
| CN107533103A (en) | Mistake and defect in logic chip based on voltage-contrast derive | |
| CN104201130B (en) | A kind of optical detecting method classified for defect | |
| CN103941171B (en) | Semiconductor test structure and test method | |
| CN110517969A (en) | Wafer defect monitoring method and system and computer storage medium | |
| KR100630005B1 (en) | Apparatus for non-destructive inspection of broken metal line and the method thereof | |
| JP5590043B2 (en) | TFT substrate inspection apparatus and TFT substrate inspection method | |
| KR100707585B1 (en) | System and method for automatically measuring carrier density distribution by using capacitance-voltage characteristics of mos transistor device | |
| CN103500720B (en) | Electron beam flaw scanner matching degree test structure and method of testing | |
| TW201035559A (en) | Patterned wafer inspection system using a non-vibrating contact potential difference sensor | |
| CN103065991B (en) | The detection method of the repeated defects of semiconductor device | |
| JP4728207B2 (en) | Inspection device | |
| CN103943527B (en) | The method using Test Constructure of detection etching polysilicon gate defect | |
| CN102768968A (en) | Method for detecting diffusivity of wellblock implantation ions in different concentrations | |
| US20050037525A1 (en) | System and method of evaluating gate oxide integrity for semiconductor microchips | |
| WO2008096211A2 (en) | Measurement of critical dimensions of semiconductor wafers | |
| CN106098583B (en) | For the electron beam scanning detection method of polysilicon oxide grid missing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |