CN103646889A - A method for detecting wafer defects - Google Patents
A method for detecting wafer defects Download PDFInfo
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- CN103646889A CN103646889A CN201310630250.9A CN201310630250A CN103646889A CN 103646889 A CN103646889 A CN 103646889A CN 201310630250 A CN201310630250 A CN 201310630250A CN 103646889 A CN103646889 A CN 103646889A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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Abstract
The invention relates to a method for detecting wafer defects. The method comprises following steps: a) providing two detecting light beams; b) projecting a first light beam on a first position of a wafer and simultaneously projecting a second light beam on a second position of the wafer; c) performing defect detection on the first position and/or the second position according to the image gray scale characteristics of the first position and the second position; d) moving the wafer in order to respectively project the first light beam and the second light beam on a third position and a fourth position which respectively substitute for the first position and the second position; e) repeating the steps c) and d) until all wafer areas are detected, wherein the first position, the second position, the third position, and the fourth position are different positions to be detected on the surface of the wafer. The method is especially suitable for defect detection of large-size wafers and is capable of increasing detecting area in unit time and greatly increasing wafer defect detecting efficiency.
Description
Technical field
The present invention relates to field of semiconductor processing and manufacturing, more particularly, relate to a kind of wafer defect detection method.
Background technology
Along with design and the Manufacturing Technology Development of integrated circuit, the live width of the Key Circuit on chip is more and more less, and the circuit on it distributes and also becomes increasingly complex, and the fluctuation of any production technology all likely causes final electrical inefficacy.Therefore in actual production process, often dispose the equipment of a considerable amount of defects detection.Optical detecting method is to have the light of certain projected area to project on wafer by a branch of, with industrial camera, observe this light source projects district, by the obvious abnormal zone definitions of gray feature, it is defect area, wafer moves with certain speed by equipment objective table in horizontal or vertical direction, to detect respectively the defect of zones of different on wafer.
Defect inspection method in currently available technology is figure and the dimension information of concrete chip on wafer to be set in defects detection program, with single beam flying crystal column surface.While starting to detect, can in trace routine, first set and detect original position and detect final position, after to original position, scanning detects, make equipment objective table with certain speed in the horizontal direction (for ease of explanation, here take horizontal direction as example) on progressively move, thereby in the horizontal direction that makes to flush with original position on wafer, each chip is successively by beam flying detection, at wafer, move to last piece of chip of this direction and complete after detection, turn back to original position, switch to again vertical direction, the distance moving both vertically is determined by the detection resolution of light beam, continue in the horizontal direction subsequently progressively move and detect, repeat said process, until complete the detection of whole wafer.
Yet defect detection equipment price is high, cause production cost significantly to rise; When the size of wafer further develops the size that 450mm is even larger, it is very long that the time of defects detection can become, and makes wafer production decrease in efficiency.
Therefore, need in the industry a kind of wafer defect detection method more efficiently.
Summary of the invention
The object of the present invention is to provide a kind of efficient wafer defect detection method.
For achieving the above object, the present invention's one technical scheme is as follows:
A wafer defect detection method, comprises the steps: a), provides two bundles to detect light beam, is respectively the first light beam and the second light beam; B), with the first light beam, be projeced into wafer primary importance, with the second light beam, be projeced into the wafer second place simultaneously; C), according to the gradation of image feature of primary importance and the second place, primary importance and/or the second place are carried out respectively to defects detection; D), mobile wafer so that the first light beam and the second light beam are projected to respectively wafer the 3rd position and the 4th position, with the 3rd, the 4th position, replace respectively first, second position; E), repeated execution of steps c) and steps d), until all wafer area has been detected; Wherein, the first, second, third and the 4th position is respectively the mutually different position to be detected of crystal column surface.
Preferably, step a) afterwards, step b) also comprise before step: set the detection original position of first, second light beam and detect final position; And, the mobile route of setting wafer; Step b), in, first, second position is respectively the detection original position of first, second light beam.
Preferably, the detection original position of first, second light beam and detection final position lay respectively on the different chip of crystal round fringes portion.
Preferably, in steps d) in, if after wafer moves, the first and second light beams are projeced into respectively outside crystal round fringes portion chip, this suspends repeated execution of steps c), until moving to again, wafer make this first or second light beam again be projeced into position to be detected on wafer.
Preferably, wafer is placed on an objective table, and objective table comprises a horizontal rail and a vertical track, steps d) in, objective table moves with mobile wafer along horizontal rail or vertical track.
Preferably, between first, second light beam, distance is steady state value, and between first, second position, between distance and the 3rd, the 4th position, distance equals or is slightly larger than wafer radius.
Wafer defect detection method provided by the invention, is particularly useful for large-sized wafer to carry out defects detection, and it has improved the area of detection in unit interval, can improve significantly the efficiency that wafer defect detects.
Accompanying drawing explanation
Fig. 1 illustrates the wafer defect detection method schematic flow sheet of one embodiment of the invention;
Fig. 2 illustrates the detection original position of first, second light beam in one embodiment of the invention and detects final position;
Fig. 3 illustrates the present invention's one preferred implementation chips image ratio to schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
It should be noted that, in embodiment provided by the invention, wafer is placed on an objective table, and objective table comprises a horizontal rail and a vertical track, and objective table can move along horizontal rail or vertical track, thus mobile wafer.On wafer, comprise many pieces of chips, between each chip, be provided with Cutting Road, when subsequent technique completes, along Cutting Road cutting crystal wafer, can make each piece of chip separately.
Detecting light beam is combined with industrial camera the detection of wafer, by industrial camera, observe projection on wafer have the region of detecting light beam, and in conjunction with certain image treatment measures, by the identification of gradation of image feature with compare, can effectively detect the defect on wafer.
As shown in Figure 1, the wafer defect detection method that one embodiment of the invention provides, comprises the steps:
Step S10, provide two bundles to detect light beams, be defined as respectively the first light beam and the second light beam.
Wherein, between first, second light beam, distance is steady state value.The wavelength of first, second light beam is for example 260-450nm.
Step S11, with the first light beam, be projeced into wafer primary importance, with the second light beam, be projeced into the wafer second place simultaneously.
Particularly, first, second position is respectively the mutually different position to be detected of crystal column surface.Based on constant distance between the first light beam and the second light beam, correspondingly, between first, second position, distance is also constant.If first, second light beam be perpendicular projection in crystal column surface, the distance between first, second position equals the distance between the first light beam and the second light beam.
Under preferable case, between first, second position, distance equals or is slightly larger than wafer radius.
Further, detecting and starting (performing step first S11) before first, can first in trace routine, set and detect original position and detect final position.In step S11, first, second position is respectively the detection original position of first, second light beam.In this embodiment, set the detection original position of first, second light beam and detect final position and lay respectively on the different chip of crystal round fringes portion, for example, the detection original position of first, second light beam as shown in Figure 2, be respectively A point and B point, the detection final position of first, second light beam is respectively C point and D point.If defects detection is carried out in a certain specific region of crystal column surface, the detection original position of first, second light beam and detection final position also can be on the chips of crystal round fringes portion.
Further, before detection starts first, also can set the mobile route of wafer, make in subsequent step, objective table drives wafer movement according to the mobile route of this setting.
Be appreciated that from detecting original position to detecting the process of final position, have multiple different motion path.For example, first make objective table progressively move in the horizontal direction with certain speed, the distance of single step campaign is determined by the detection resolution of light beam, thereby in the horizontal direction that makes to flush with detection original position on wafer, each chip is successively by beam flying detection, at wafer, move to last piece of chip of this direction and complete after detection, turn back to original position, switch to again vertical direction, the distance moving both vertically is also determined by the detection resolution of light beam, (it is directly proportional to the detection resolution of light beam at the diameter of crystal column surface projected spot for example to can be the first light beam, the unit of the detection resolution of light beam is nm
2/ pixel), continue in the horizontal direction subsequently progressively move and carry out horizontal direction detection, repeat said process, until complete the detection of whole wafer.
Similarly, also can first carry out the detection of vertical direction, after in the vertical direction flushing with detection original position, each chip beam flying has been detected successively, make the wafer distance of a mobile hot spot (the first light beam forms in crystal column surface projection) diameter in the horizontal direction, carry out again the scanning testing process in the second vertical direction of taking turns, so continue, until complete the detection of whole wafer.
Step S12, according to the gradation of image feature of primary importance and the second place, primary importance and/or the second place are carried out respectively to defects detection.
Particularly, the gray feature of image is such as comprising average gray feature, gray scale mean square deviation feature etc.If the gray feature of a certain chip region, obviously extremely in other chip region, judges that this chip region exists defect.
When extracting chip region gray feature, one chip region can be compared with the chip region image of its left and right sides respectively, for certain some location of pixels, if in twice comparison, its gray scale difference value (exceeding defect recognition threshold value) is corresponding, for example the gray scale difference value of this twice comparison gained is complementary, can judge that this location of pixels exists defect.
According to further improvement of the present invention, also chip region to be detected and wafer any two or a plurality of locational chip region image can be compared respectively, by gray feature defect recognition.As shown in Figure 3, the image of the image of chip B and chip A, C is compared, the image of the image of chip C and chip B, D is compared, the image of the image of chip D and chip C, E is compared, other chip images are compared in a similar manner, this comparison method can promote defect recognition rate, is the preferred embodiment of the present invention.
In this step S12, as long as at least one in primary importance and the second place is the region to be detected on wafer, can carry out defects detection.For example, if only primary importance is region to be detected, and the second place is positioned at outside chip wafer region, still can carry out normal defects detection to primary importance, to the second place unloaded, wouldn't detect.
Step S13, mobile wafer, so that the first light beam and the second light beam are projected to respectively wafer the 3rd position and the 4th position, and replace respectively first, second position with the 3rd, the 4th position.
Particularly, the third and fourth position is the mutually different position to be detected of crystal column surface respectively, and does not overlap and first, second position.Three, constant distance between the 4th position, identical with distance between first, second position, equals or be slightly larger than wafer radius.
Wherein, mobile wafer can move and realize along horizontal rail or vertical track by ordering about objective table.The mobile route of wafer can as mentioned above, be set before starting in detection first.
Further, after if wafer moves, first, second light beam is all projeced into outside crystal round fringes portion chip and (leaves the chip area on wafer), suspend and detect, suspend repeated execution of steps S12, until moving to again, wafer make this first or second light beam again be projeced into position to be detected on wafer, at this moment, and repeated execution of steps S12.
Further, between the first, the 3rd position distance by the detection resolution of the first light beam, (unit is nm
2/ pixel) determine, between the second, the 4th position, distance is nm by the detection resolution unit of the second light beam
2/ pixel) determine.
Under preferable case, the detection resolution of the first light beam is identical with the detection resolution of the second light beam.
Whether step S14, judge that wafer detects and complete, if do not complete, repeated execution of steps S12 and step S13, until all wafer area has been detected.
The wafer defect detection method that the above embodiment of the present invention provides, adopt a plurality of scanning light beams crystal column surface to be detected simultaneously, and can set the mobile route that detects original position, detects final position and wafer, the method is particularly useful for large-sized wafer to carry out defects detection, it has improved the area of detection in unit interval, can improve significantly the efficiency that wafer defect detects.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (8)
1. a wafer defect detection method, comprises the steps:
A), provide two bundles to detect light beams, be respectively the first light beam and the second light beam;
B), with described the first light beam, be projeced into wafer primary importance, with described the second light beam, be projeced into the wafer second place simultaneously;
C), according to the gradation of image feature of described primary importance and the second place, described primary importance and/or the second place are carried out respectively to defects detection;
D), mobile described wafer so that described the first light beam and the second light beam are projected to respectively wafer the 3rd position and the 4th position, with described the 3rd, the 4th position, replace respectively described first, second position;
E), repeat described step c) and steps d), until whole described wafer area has been detected;
Wherein, the described first, second, third and the 4th position is respectively the mutually different position to be detected of described crystal column surface.
2. detection method as claimed in claim 1, is characterized in that, described step a) afterwards, step b) also comprise before step:
Set the detection original position of described first, second light beam and detect final position; And,
Set the mobile route of described wafer;
Described step b), in, described first, second position is respectively the detection original position of described first, second light beam.
3. detection method as claimed in claim 2, is characterized in that, the detection original position of described first, second light beam and detect final position and lay respectively on the different chip of described crystal round fringes portion.
4. detection method as claimed in claim 1, it is characterized in that, in described steps d) in, after if described wafer moves, described the first and second light beams are projeced into respectively outside described crystal round fringes portion chip, this time-out repeats described step c), until moving to again, described wafer make this first or second light beam again be projeced into position to be detected on described wafer.
5. detection method as claimed in claim 1, it is characterized in that, described wafer is placed on an objective table, and described objective table comprises a horizontal rail and a vertical track, described steps d), in, described objective table moves with mobile described wafer along described horizontal rail or vertical track.
6. detection method as claimed in claim 1, is characterized in that, between described first, second light beam, distance is steady state value, and between described first, second position, between distance and described the 3rd, the 4th position, distance equals or is slightly larger than described wafer radius.
7. detection method as claimed in claim 1, is characterized in that, between described the first, the 3rd position, distance is determined by the detection resolution of described the first light beam, and between described the second, the 4th position, distance is determined by the detection resolution of described the second light beam.
8. detection method as claimed in claim 7, is characterized in that, the detection resolution of described the first light beam is identical with the detection resolution of described the second light beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310630250.9A CN103646889A (en) | 2013-11-29 | 2013-11-29 | A method for detecting wafer defects |
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| CN201310630250.9A CN103646889A (en) | 2013-11-29 | 2013-11-29 | A method for detecting wafer defects |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105242192A (en) * | 2015-10-09 | 2016-01-13 | 上海华虹宏力半导体制造有限公司 | Wafer testing method |
| CN105353293A (en) * | 2015-10-09 | 2016-02-24 | 上海华虹宏力半导体制造有限公司 | Wafer testing method |
| CN109427605A (en) * | 2017-08-23 | 2019-03-05 | 三星电子株式会社 | Semiconductor manufacturing facility and the method for using its manufacturing semiconductor devices |
| WO2020038359A1 (en) * | 2018-08-21 | 2020-02-27 | 深圳中科飞测科技有限公司 | Detection system and method |
| CN110849898A (en) * | 2018-08-21 | 2020-02-28 | 深圳中科飞测科技有限公司 | Wafer defect detection system and method |
| CN111855662A (en) * | 2019-04-30 | 2020-10-30 | 芯恩（青岛）集成电路有限公司 | Wafer defect detection device and method |
| CN114113142A (en) * | 2022-01-24 | 2022-03-01 | 广州粤芯半导体技术有限公司 | Defect detection method and device for semiconductor device and electronic equipment |
| CN116779497A (en) * | 2023-08-23 | 2023-09-19 | 深圳超盈智能科技有限公司 | Chip screening method, device, equipment and storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5580043A (en) * | 1979-03-23 | 1980-06-16 | Hiyuutec:Kk | Surface flaw detection of red-hot metal material |
| CN101339913A (en) * | 2007-07-02 | 2009-01-07 | 日东电工株式会社 | Method for detecting position of defect on semiconductor wafer |
| CN101738398A (en) * | 2002-03-22 | 2010-06-16 | 应用材料以色列有限公司 | Wafer defect detection system with traveling lens multi-beam scanner |
-
2013
- 2013-11-29 CN CN201310630250.9A patent/CN103646889A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5580043A (en) * | 1979-03-23 | 1980-06-16 | Hiyuutec:Kk | Surface flaw detection of red-hot metal material |
| CN101738398A (en) * | 2002-03-22 | 2010-06-16 | 应用材料以色列有限公司 | Wafer defect detection system with traveling lens multi-beam scanner |
| CN101339913A (en) * | 2007-07-02 | 2009-01-07 | 日东电工株式会社 | Method for detecting position of defect on semiconductor wafer |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105242192A (en) * | 2015-10-09 | 2016-01-13 | 上海华虹宏力半导体制造有限公司 | Wafer testing method |
| CN105353293A (en) * | 2015-10-09 | 2016-02-24 | 上海华虹宏力半导体制造有限公司 | Wafer testing method |
| CN105242192B (en) * | 2015-10-09 | 2018-04-17 | 上海华虹宏力半导体制造有限公司 | Crystal round test approach |
| CN105353293B (en) * | 2015-10-09 | 2018-04-17 | 上海华虹宏力半导体制造有限公司 | Crystal round test approach |
| CN109427605A (en) * | 2017-08-23 | 2019-03-05 | 三星电子株式会社 | Semiconductor manufacturing facility and the method for using its manufacturing semiconductor devices |
| WO2020038359A1 (en) * | 2018-08-21 | 2020-02-27 | 深圳中科飞测科技有限公司 | Detection system and method |
| CN110849898A (en) * | 2018-08-21 | 2020-02-28 | 深圳中科飞测科技有限公司 | Wafer defect detection system and method |
| CN111855662A (en) * | 2019-04-30 | 2020-10-30 | 芯恩（青岛）集成电路有限公司 | Wafer defect detection device and method |
| CN114113142A (en) * | 2022-01-24 | 2022-03-01 | 广州粤芯半导体技术有限公司 | Defect detection method and device for semiconductor device and electronic equipment |
| CN114113142B (en) * | 2022-01-24 | 2022-06-03 | 广州粤芯半导体技术有限公司 | Defect detection method and device for semiconductor device and electronic equipment |
| CN116779497A (en) * | 2023-08-23 | 2023-09-19 | 深圳超盈智能科技有限公司 | Chip screening method, device, equipment and storage medium |
| CN116779497B (en) * | 2023-08-23 | 2023-10-31 | 深圳超盈智能科技有限公司 | Chip screening method, device, equipment and storage medium |
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Application publication date: 20140319 |