CN111855662A - Wafer defect detection device and method - Google Patents
Wafer defect detection device and method Download PDFInfo
- Publication number
- CN111855662A CN111855662A CN201910363691.4A CN201910363691A CN111855662A CN 111855662 A CN111855662 A CN 111855662A CN 201910363691 A CN201910363691 A CN 201910363691A CN 111855662 A CN111855662 A CN 111855662A
- Authority
- CN
- China
- Prior art keywords
- die
- polarizer
- light beam
- wafer
- crystal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8803—Visual inspection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
Abstract
The invention provides a wafer defect detection device and method, the detection device at least comprises: a light source; a wafer comprising a plurality of first dies and a plurality of second dies; a beam splitter that splits light emitted from the light source into a first light beam and a second light beam; the polarizer is used for reflecting the first light beam and the second light beam to the first crystal grain and the second crystal grain respectively; and an actuator that causes the first polarizer and the second polarizer to simultaneously generate relative movement with the first die and the second die, respectively, in the first direction. The detection device changes the light source into 2 beams of light source waves with the same wavelength and property, changes the detection mode of the detection device into a mode of 2 rows in the same row or 2 columns in the same row, and adds a transmission device on the polarizer to ensure the accuracy of the irradiation position of the detection light through the translation in the X direction, thereby greatly improving the optical detection speed and the detection throughput.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a device and a method for detecting surface defects of a wafer.
Background
In the field of semiconductor manufacturing, photolithography is used to form a pattern on the surface of a wafer to obtain a structure required by a design. In the photolithography process, due to the influence of the reticle, the photoresist and other factors, the pattern formed by photolithography on the surface of the wafer may have defects, and therefore, the pattern on the surface of the wafer needs to be detected to determine whether the wafer and the dies thereon meet the requirements. Defects on the surface of a semiconductor wafer are the most important part of all wafer foundries for wafer yield, and meanwhile, the method for detecting the defects on the surface of the wafer is also important. The optical inspection method is one of the most commonly used wafer inspection methods because it has the advantages of not damaging the cleanliness of the wafer surface and being capable of real-time inspection. The optical detection method uses an optical scattering intensity measurement technology to detect the existence of particles on the surface of the wafer, the spatial distribution of the particles on the surface of the wafer and the like.
The light source for optical detection is now moved in a manner that translates right or down from the original first die to the last die of the row or column, and then back to the second row or column and then likewise from the first die of the row or column. Fig. 1 is a schematic diagram of a prior art optical detection apparatus for wafer defects, the detection apparatus includes a light source 101, a polarizer 102, and a wafer 103, and light emitted from the light source 101 is reflected by the polarizer 102 and then irradiated onto the wafer 103. Wherein the wafer 103 includes a plurality of dies. As shown in fig. 2, the method for inspecting the wafer 103 by using the optical inspection apparatus shown in fig. 1, the wafer 103 includes a plurality of dies a-T, wherein the plurality of dies a-T are divided into 5 rows arranged along the Y axis, each row having 4 dies arranged along the X axis; the optical detection device scans from the crystal grain A and moves in parallel along the X-axis direction, and after the first line is scanned, the second line is scanned, and so on.
However, in the case of 12-inch wafers becoming more popular and the size of the die becoming smaller, this detection method has the following disadvantages:
1. the number of rows or columns of each wafer to be moved is more and more;
2. this way of moving the light source slows down the speed and throughput of the optical detection.
Therefore, how to increase the optical detection speed and improve the detection throughput is a technical problem that needs to be solved urgently by the current optical detection technology.
Disclosure of Invention
In view of this, embodiments of the present invention provide a wafer defect detecting apparatus and method, so as to solve the problem of slow speed and throughput of optical detection in the prior art.
According to a first aspect, an embodiment of the present invention provides a wafer defect detecting apparatus, which at least includes:
a light source;
the wafer comprises a plurality of first crystal grains which are arranged in an extending mode along a first direction, and further comprises a plurality of second crystal grains which are arranged in the extending mode along the first direction, and the second crystal grains are adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
at least one beam splitter including a first beam splitter that splits light emitted by the light source into a first light beam and a second light beam;
A first polarizer to reflect the first light beam, the first light beam to illuminate the first die on the wafer;
a second polarizer for reflecting the second light beam, the second light beam illuminating the second die on the wafer;
the image sensing device is used for acquiring images of the first crystal grain and the second crystal grain; and
an actuator that causes relative movement of the first polarizer and the second polarizer in the first direction simultaneously with the first die and the second die, respectively.
Optionally, the wafer further includes a plurality of third dies arranged to extend along the first direction, and the plurality of third dies are arranged adjacent to or spaced apart from the plurality of first dies and the plurality of second dies along the second direction; the at least one beam splitter further comprises a second beam splitter, and the second beam splitter reflects or refracts a part of the light emitted by the light source into a third light beam; the image sensing device is also used for acquiring an image of the third crystal grain;
the detection device further comprises: a third polarizer for reflecting the third light beam, the third light beam illuminating the third die on the wafer; the actuator causes the first polarizer, the second polarizer, and the third polarizer to simultaneously generate relative movement along the first direction with the first die, the second die, and the third die, respectively.
According to a second aspect, the present invention provides a wafer defect detecting device, comprising:
a light source;
the wafer structure comprises at least one wafer, at least one first wafer and at least one second wafer, wherein the first wafer comprises a plurality of first crystal grains which are arranged in an extending mode along a first direction, the first wafer further comprises a plurality of second crystal grains which are arranged in the extending mode along the first direction, and the second crystal grains are arranged adjacent to or at intervals with the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
the second wafer comprises a plurality of third crystal grains which are arranged in an extending mode along a first direction, and the second wafer further comprises a plurality of fourth crystal grains which are arranged in an extending mode along the first direction, and the fourth crystal grains are arranged adjacent to or spaced from the third crystal grains along a second direction;
at least one beam splitter splitting light emitted by the light source into at least a first light beam, a second light beam, a third light beam, and a fourth light beam;
the at least one polarizer comprises a first polarizer, a second polarizer, a third polarizer and a fourth polarizer, the first polarizer, the second polarizer, the third polarizer and the fourth polarizer are used for reflecting the first light beam, the second light beam, the third light beam and the fourth light beam respectively, and the first light beam, the second light beam, the third light beam and the fourth light beam respectively irradiate the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain;
The image sensing device is used for acquiring images of the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain; and
and the transmission device enables the first polarizer, the second polarizer, the third polarizer and the fourth polarizer to simultaneously generate relative movement along the first direction with the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain.
Optionally, the light source includes a coaxial light source or a dark field illumination mode.
Optionally, the light source comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
Optionally, the image sensing device comprises an image sensor for capturing an image of the die.
Optionally, the image sensing apparatus further includes a lens for magnifying and focusing the die to the image sensor.
Optionally, the beam splitter comprises a planar beam splitter.
Optionally, the beam splitter comprises a non-polarizing beam splitter.
Optionally, the first die and the second die each include a plurality of pixel units, the first die and the second die are respectively represented by a pixel matrix formed by the plurality of pixel units, and the first light beam and the second light beam respectively irradiate the pixel units at the same positions of the first die and the second die.
Optionally, the first crystal grain, the second crystal grain and the third crystal grain each include a plurality of pixel units, the first crystal grain, the second crystal grain and the third crystal grain are respectively represented by a pixel matrix formed by the plurality of pixel units, and the first light beam, the second light beam and the third light beam respectively irradiate the pixel units at the same positions of the first crystal grain, the second crystal grain and the third crystal grain.
Optionally, the first crystal grain, the second crystal grain, the third crystal grain, and the fourth crystal grain each include a plurality of pixel units, the first crystal grain, the second crystal grain, the third crystal grain, and the fourth crystal grain are respectively represented by a pixel matrix formed by the plurality of pixel units, the first light beam and the second light beam respectively irradiate the pixel units at the same positions of the first crystal grain and the second crystal grain, and the third light beam and the fourth light beam respectively irradiate the pixel units at the same positions of the third crystal grain and the fourth crystal grain.
According to a third aspect, an embodiment of the present invention provides a wafer defect detection method, including at least the following steps:
providing a light source;
providing a wafer, wherein the wafer comprises a plurality of first crystal grains which are arranged in an extending mode along a first direction, the wafer further comprises a plurality of second crystal grains which are arranged in an extending mode along the first direction, and the second crystal grains are adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
Providing at least one beam splitter, the at least one beam splitter comprising a first beam splitter that splits light emitted by the light source into a first light beam and a second light beam;
providing a first polarizer for reflecting the first light beam, the first light beam illuminating the first die on the wafer;
providing a second polarizer for reflecting the second light beam, the second light beam illuminating the second die on the wafer;
providing an image sensing device, wherein the image sensing device is used for acquiring images of the first crystal grain and the second crystal grain; and
providing an actuator that causes relative movement of the first polarizer and the second polarizer and the first die and the second die, respectively, in the first direction simultaneously.
Optionally, the wafer further includes a plurality of third dies arranged to extend along the first direction, and the plurality of third dies are arranged adjacent to or spaced apart from the plurality of first dies and the plurality of second dies along the second direction; the at least one beam splitter further comprises a second beam splitter, and the second beam splitter reflects or refracts a part of the light emitted by the light source into a third light beam; the image sensing device is also used for acquiring an image of the third crystal grain;
The detection device further comprises: a third polarizer for reflecting the third light beam, the third light beam illuminating the third die on the wafer; the actuator causes the first polarizer, the second polarizer, and the third polarizer to simultaneously generate relative movement along the first direction with the first die, the second die, and the third die, respectively.
According to a fourth aspect, the present invention provides a wafer defect detecting method, the method at least comprising the steps of:
providing a light source;
providing at least one wafer, wherein the at least one wafer at least comprises a first wafer and a second wafer, the first wafer comprises a plurality of first crystal grains which are arranged in an extending mode along a first direction, the first wafer further comprises a plurality of second crystal grains which are arranged in an extending mode along the first direction, and the second crystal grains are arranged adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
the second wafer comprises a plurality of third crystal grains which are arranged in an extending mode along a first direction, and the second wafer further comprises a plurality of fourth crystal grains which are arranged in an extending mode along the first direction, and the fourth crystal grains are arranged adjacent to or spaced from the third crystal grains along a second direction;
Providing at least one beam splitter, said at least one beam splitter splitting light emitted by said light source into at least a first light beam, a second light beam, a third light beam and a fourth light beam;
providing at least one polarizer, wherein the at least one polarizer comprises a first polarizer, a second polarizer, a third polarizer and a fourth polarizer, the first polarizer, the second polarizer, the third polarizer and the fourth polarizer are used for reflecting the first light beam, the second light beam, the third light beam and the fourth light beam respectively, and the first light beam, the second light beam, the third light beam and the fourth light beam respectively irradiate the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain;
providing an image sensing device, wherein the image sensing device is used for acquiring images of the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain; and
and providing a transmission device, wherein the transmission device enables the first polarizer, the second polarizer, the third polarizer and the fourth polarizer to simultaneously generate relative movement along the first direction with the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain.
Optionally, the light source includes a coaxial light source or a dark field illumination mode.
Optionally, the light source comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
Optionally, the image sensing device comprises an image sensor for capturing an image of the die.
Optionally, the image sensing apparatus further includes a lens for magnifying and focusing the die to the image sensor.
Optionally, the beam splitter comprises a planar beam splitter.
Optionally, the beam splitter comprises a non-polarizing beam splitter.
Optionally, the first die and the second die each include a plurality of pixel units, the first die and the second die are respectively represented by a pixel matrix formed by the plurality of pixel units, and the first light beam and the second light beam respectively irradiate the pixel units at the same positions of the first die and the second die.
Optionally, the first crystal grain, the second crystal grain and the third crystal grain each include a plurality of pixel units, the first crystal grain, the second crystal grain and the third crystal grain are respectively represented by a pixel matrix formed by the plurality of pixel units, and the first light beam, the second light beam and the third light beam respectively irradiate the pixel units at the same positions of the first crystal grain, the second crystal grain and the third crystal grain.
Optionally, the first crystal grain, the second crystal grain, the third crystal grain, and the fourth crystal grain each include a plurality of pixel units, the first crystal grain, the second crystal grain, the third crystal grain, and the fourth crystal grain are respectively represented by a pixel matrix formed by the plurality of pixel units, the first light beam and the second light beam respectively irradiate the pixel units at the same positions of the first crystal grain and the second crystal grain, and the third light beam and the fourth light beam respectively irradiate the pixel units at the same positions of the third crystal grain and the fourth crystal grain.
Optionally, the images of the plurality of first dies are compared to obtain the wafer defect, and the images of the plurality of second dies are compared to obtain the wafer defect.
Optionally, the image of the first die is compared with the image of the second die to obtain the wafer defect.
Optionally, the images of the plurality of third dies are compared to obtain the wafer defect, and simultaneously, the image of the third die and the image of the fourth die are compared to obtain the wafer defect.
According to the detection device and the detection method, a new optical means is used in the optical detection device to change a light source into 2 beams of light source waves with the same wavelength and property, the detection mode of the detection device is changed into a mode of 2 rows in the same row or 2 columns in the same row, a transmission device is additionally arranged on a polarizer, and the accuracy of the irradiation position of the detection light is ensured by translation in the X direction, so that the optical detection speed is greatly improved, and the detection throughput is improved. In addition, in addition to comparing the left and right 2 crystal grains to find out the wafer defects, the comparison can be added up and down again, namely comparing the crystal grains in the previous row with the crystal grains in the next row, so that the detection speed and the detection precision can be further improved.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and not to be construed as limiting the invention in any way, and in which:
FIG. 1 is a schematic view of a prior art optical inspection apparatus for wafer defects.
Fig. 2 is a schematic view illustrating a method for inspecting a wafer by using the optical inspection apparatus shown in fig. 1 in the prior art.
FIG. 3 is a schematic view of a wafer defect inspection apparatus according to the present invention.
FIG. 4 is a schematic view of a wafer defect inspection method for inspecting a wafer by using the wafer defect inspection apparatus shown in FIG. 3 according to the present invention.
FIG. 5 is a schematic diagram of an improved embodiment of the wafer defect inspection apparatus of the present invention.
Fig. 6 is a schematic diagram illustrating the principle of increasing the optical inspection speed of the present invention, wherein fig. 6(a) is a wafer inspection method in the prior art, and fig. 6(b) is a wafer inspection method according to the present invention.
FIG. 7 is a flowchart illustrating a wafer defect inspection method according to the present invention.
FIG. 8 is a schematic view of another embodiment of the wafer defect inspection apparatus of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Fig. 3 is a schematic view of a wafer defect inspection apparatus according to the present invention, and fig. 4 is a schematic view of a wafer defect inspection method according to the present invention for inspecting a wafer by using the wafer defect inspection apparatus shown in fig. 3. With reference to fig. 3-4, the detection device at least comprises: a light source 301; a wafer 303, where the wafer 303 includes a plurality of first dies A, F, K, P arranged to extend along a first direction, where the first direction is along an X-axis direction; the wafer 303 further includes a plurality of second dies C, H, M, R extending along a first direction, the plurality of second dies being spaced apart from the plurality of first dies along a second direction, the second direction being along the Y-axis direction, and the first direction and the second direction being perpendicular to each other. The plurality of second dies can also be second dies, such as die B, G, L, Q, arranged adjacent to the plurality of first dies of the first row. The detection device further comprises: a beam splitter 304, wherein the beam splitter 304 splits the light emitted from the light source 301 into a first light beam and a second light beam; a first polarizer 302, the first polarizer 302 being configured to reflect the first light beam, the first light beam illuminating the first die A, F, K, P on the wafer 303; a second polarizer 306, the second polarizer 306 being configured to reflect the second light beam, the second light beam illuminating the second die C, H, M, R on the wafer 303; an image sensing device (not shown) for acquiring images of the first die A, F, K, P and the second die C, H, M, R; and an actuator 307, the actuator 307 causing relative movement of the first polarizer 302 and the second polarizer 306 with the first die and the second die, respectively, in the first direction simultaneously. The relative movement may be caused by the actuators 307 moving the polarizers 302, 306 while the wafer 303 is stationary, by the actuators 307 being stationary while the wafer 303 is moving, or by both moving.
Optionally, the actuator 307 moves the first polarizer 302 and the second polarizer 306 in parallel along the first direction at the same time. As shown in fig. 4, in the initial position, the first beam irradiates the die a, while the second beam irradiates the die C; the first light beam and the second light beam are driven by the actuator 307 to move in parallel along the X-axis direction, and scan each first crystal grain located in the first row and each second crystal grain located in the third row. After the crystal grains in the first row and the third row are scanned, the first light beam is moved to the initial position of the second row, the second light beam is moved to the initial position of the fourth row, the row scanning operation is executed again, and the like.
The detection device uses a new optical means to change a light source into 2 beams of light source waves with the same wavelength and property, two beams of mutually non-interfering light sources irradiate the wafer to carry out equidirectional light path detection, the detection mode of the detection device is changed into a mode of 2 rows of same lines or 2 columns of same lines, two lines or two lines of crystal grains can be scanned at one time and a defect detection result is provided, a transmission device is added on a polarizer, and the accuracy of the irradiation position of the detection light is ensured by the translation in the X direction, so that the optical detection speed is greatly improved, and the detection throughput is improved. After the detection light is detected through the surface of the wafer, the reflected light is subjected to signal collection through the original image sensing device for detection, so that the refitting cost of the wafer detection device is not greatly increased.
The light source 301 comprises a coaxial light source or a dark field illumination mode, and the light source 301 comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
The image sensing device (not shown) includes an image sensor for capturing images of the first die and the second die; the image sensing device further includes a lens for magnifying and focusing the first die and the second die to the image sensor.
The beam splitter 304 comprises a planar beam splitter, or a non-polarizing beam splitter, for converting the light emitted from the light source 301 into 2 first and second light beams with the same wavelength and property.
In order to enable the second light beam to accurately irradiate the second die, the wafer defect detecting apparatus further includes a reflector or polarizer 305 to reflect the second light beam emitted from the beam splitter 304 to the second polarizer 306.
When performing defect detection on the wafer 303, the images of the first dies A, F, K, P are compared to obtain the defects of the wafer 303, and the images of the second dies C, H, M, R are compared to obtain the defects of the wafer. For example, the image of the crystal grain F may be compared with the images of the crystal grains a and K to know whether the crystal grain F has a defect; the image of the crystal grain H is compared with the images of the crystal grains C and M to know whether or not the crystal grain H has a defect. Besides comparing the left and right 2 crystal grains in the same row to find out the wafer defects, the comparison can be added up and down again, namely comparing the crystal grains in the previous row with the crystal grains in the next row, so that the detection speed and the detection precision can be further improved. For example, the image of the crystal grain F can be compared with the image of the crystal grain H, and then the comparison result of the image of the crystal grain F and the images of the crystal grain a and the crystal grain K can be combined to further determine whether the crystal grain F has defects.
Example two
Unlike the first embodiment, the embodiment of the present invention provides a wafer defect detecting apparatus including a plurality of beam splitters, and the same components in the first embodiment are denoted by the same reference numerals. The detection device at least comprises: a light source 301; a wafer 303, where the wafer 303 includes a plurality of first dies A, F, K, P arranged to extend along a first direction, where the first direction is along an X-axis direction; the wafer 303 further includes a plurality of second dies C, H, M, R arranged to extend along a first direction, the plurality of second dies being arranged at intervals with the plurality of first dies along a second direction, the second direction being along the Y-axis direction, the first direction and the second direction being perpendicular to each other; the wafer also includes a plurality of third dies, such as die B, G, L, Q, die D, I, N, S, or die E, J, O, T, arranged extending in a first direction, the plurality of third dies arranged adjacent to or spaced apart from the plurality of first dies and the plurality of third dies in a second direction. The detection device further comprises: a first beam splitter 304, wherein the first beam splitter 304 splits the light emitted from the light source 301 into a first light beam and a second light beam. The detection device further comprises a second beam splitter 308, and the second beam splitter 308 reflects a part of the light emitted from the light source 301 as a third light beam.
The detection device further comprises: a first polarizer 302, the first polarizer 302 being configured to reflect the first light beam, the first light beam illuminating the first die A, F, K, P on the wafer 303; a second polarizer 306, the second polarizer 306 being configured to reflect the second light beam, the second light beam illuminating the second die C, H, M, R on the wafer 303; a third polarizer 310, the third polarizer 310 being configured to reflect the third light beam, the third light beam illuminating the third die on the wafer 303.
In order to enable the third light beam to accurately irradiate the third die, the wafer defect detecting apparatus further includes a reflector or polarizer 309 for reflecting the third light beam emitted from the beam splitter 308 to the third polarizer 310.
An image sensing device (not shown) for acquiring images of the first die A, F, K, P, the second die C, H, M, R, and the third die; and an actuator 307, wherein the actuator 307 causes the first polarizer 302, the second polarizer 306, and the third polarizer 310 to move relative to the first die, the second die, and the third die, respectively, in the first direction at the same time.
Fig. 8 only shows a detection device including two beam splitters, and in fact, more than two beam splitters may be disposed on the light emitted from the light source to generate more than three beams, and respectively irradiate onto more than three columns or more than three rows of dies, which may further improve the speed of wafer detection. The second beam splitter 308 may be disposed not only between the light source 301 and the first beam splitter 304, but also on the optical path of the first light beam or on the optical path of the second light beam.
In another embodiment, the inspection apparatus includes a plurality of wafers, for example, two wafers, each wafer includes a plurality of first dies and second dies located in a same row or a same column, and the first dies and the second dies are located in different rows or columns, respectively. The light emitted from the light source is divided into a plurality of light beams by the plurality of beam splitters, at least two light beams are distributed to each wafer, and the first crystal grain and the second crystal grain are simultaneously detected on each wafer, so that the detection speed of the wafer can be further improved.
EXAMPLE III
The present embodiment is an improved embodiment of the wafer defect detecting apparatus in the first embodiment, and the wafer defect detecting apparatus is the same as that in the first embodiment. In this embodiment, each of the first die and the second die of the wafer 303 includes a plurality of pixel units, and each of the first die and the second die is represented by a pixel matrix formed by the plurality of pixel units. Fig. 5 shows a portion of a wafer, which schematically includes four dice A, B, C, D, and divides the four dice A, B, C, D into an array of 2 rows and 2 columns, where the first row has dice A, C and the second row has dice B, D. Each die illustratively includes four pixel units (wafer inspection units, actual number is 10 to the power of the unit), for example, the die a has pixel units a/1, a/2, a/3, a/4, the die B has pixel units B/1, B/2, B/3, B/4, and the pixel units a/1, a/2, a/3, a/4 correspond to the pixel units B/1, B/2, B/3, B/4, respectively, i.e., the pixel units located at the same position in the two dies. For example, the crystal grains A and B are aligned and stacked together all around, and the pixel units A/1, A/2, A/3 and A/4 respectively have the same projection in the stacking direction as the pixel units B/1, B/2, B/3 and B/4 respectively. The spacing between the pixel cells at the same location in both dies is set to H by adjusting the actuator 307 to ensure that the first and second beams actually strike the pixel cells at the same location in 2 dies A, B.
Fig. 6 is a schematic diagram illustrating the principle of increasing the optical inspection speed of the present invention, wherein fig. 6(a) is a wafer inspection method in the prior art, and fig. 6(b) is a wafer inspection method according to the present invention. The wafer detection method in the prior art only provides one light beam, only scans one line of crystal grains at a time and provides a defect detection result; the wafer detection method of the invention uses a new optical means to change a light source into 2 beams of light source waves with the same wavelength and property, and changes the detection mode of a detection device into a mode of 2 rows of same rows, namely two beams are provided, two beams of light sources which do not interfere with each other are simultaneously irradiated on the wafer to carry out the same-direction light path detection, two lines of crystal grains can be scanned once, and a defect detection result is provided, thereby greatly improving the optical detection speed and the detection throughput. After the detection light is detected through the surface of the wafer, the reflected light is subjected to signal collection through the original image sensing device for detection, so that the refitting cost of the wafer detection device is not greatly increased.
Example four
An embodiment of the present invention provides a wafer defect detection method, as shown in fig. 7, the method at least includes the following steps:
S1, providing a light source, a wafer, a spectroscope, a polarizer and an image sensing device;
in this step, a light source is provided; providing a wafer, wherein the wafer comprises a plurality of first crystal grains which are arranged in an extending mode along a first direction, the wafer further comprises a plurality of second crystal grains which are arranged in an extending mode along the first direction, and the second crystal grains are adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other; providing a spectroscope, wherein the spectroscope divides the light emitted by the light source into a first light beam and a second light beam; providing a first polarizer, wherein the first polarizer is used for reflecting the first light beam, and the first light beam irradiates the first crystal grain on the wafer; providing a second polarizer, wherein the second polarizer is used for reflecting the second light beam, and the second light beam irradiates the second crystal grain on the wafer; providing an image sensing device, wherein the image sensing device is used for acquiring images of the first crystal grain and the second crystal grain;
s2, providing a transmission device;
in this step, a transmission means is provided which causes relative movement of the first polarizer and the second polarizer in the first direction simultaneously with the first die and the second die, respectively. The relative movement may be caused by the actuator moving the polarizer while the wafer is stationary, by the actuator being stationary while the wafer is moving, or by both moving.
The light source comprises a coaxial light source or a dark field illumination mode, and the light source comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
The image sensing device comprises an image sensor for capturing images of the first crystal grain and the second crystal grain; the image sensing device further includes a lens for magnifying and focusing the first die and the second die to the image sensor.
The beam splitter includes a planar beam splitter or a non-polarizing beam splitter.
The first crystal grain and the second crystal grain comprise a plurality of pixel units, and the first crystal grain and the second crystal grain are respectively represented by a pixel matrix formed by the pixel units; adjusting positions of the first polarizer and the second polarizer so that the first light beam and the second light beam respectively irradiate pixel units at the same positions of the first crystal grain and the second crystal grain.
Comparing the images of the first dies to obtain the wafer defects, and comparing the images of the second dies to obtain the wafer defects; and comparing the image of the first crystal grain with the image of the second crystal grain to acquire the wafer defect.
The detection method uses a new optical means to change a light source into 2 beams of light source waves with the same wavelength and property, changes the detection mode of the detection device into a mode of 2 rows in the same row or 2 columns in the same row, adds a transmission device on the polarizer, and ensures the accuracy of the irradiation position of the detection light through the translation in the X direction, thereby greatly improving the optical detection speed and the detection throughput. In addition, in addition to comparing the left and right 2 crystal grains to find out the wafer defects, the comparison can be added up and down again, namely comparing the crystal grains in the previous row with the crystal grains in the next row, so that the detection speed and the detection precision can be further improved.
The foregoing embodiments are merely illustrative of the principles of this invention and its efficacy, rather than limiting it, and various modifications and variations can be made by those skilled in the art without departing from the spirit and scope of the invention, which is defined in the appended claims.
Claims (27)
1. A wafer defect detecting device, comprising:
a light source;
the wafer comprises a plurality of first crystal grains which are arranged in an extending mode along a first direction, and further comprises a plurality of second crystal grains which are arranged in the extending mode along the first direction, and the second crystal grains are adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
At least one beam splitter including a first beam splitter that splits light emitted by the light source into a first light beam and a second light beam;
a first polarizer to reflect the first light beam, the first light beam to illuminate the first die on the wafer;
a second polarizer for reflecting the second light beam, the second light beam illuminating the second die on the wafer;
the image sensing device is used for acquiring images of the first crystal grain and the second crystal grain; and
an actuator that causes relative movement of the first polarizer and the second polarizer in the first direction simultaneously with the first die and the second die, respectively.
2. The apparatus of claim 1, wherein the wafer further comprises a plurality of third dies arranged to extend along a first direction, and the plurality of third dies are arranged adjacent to or spaced apart from the plurality of first dies and the plurality of second dies along a second direction; the at least one beam splitter further comprises a second beam splitter, and the second beam splitter reflects or refracts a part of the light emitted by the light source into a third light beam; the image sensing device is also used for acquiring an image of the third crystal grain;
The detection device further comprises: a third polarizer for reflecting the third light beam, the third light beam illuminating the third die on the wafer; the actuator causes the first polarizer, the second polarizer, and the third polarizer to simultaneously generate relative movement along the first direction with the first die, the second die, and the third die, respectively.
3. A wafer defect detecting device, comprising:
a light source;
the wafer structure comprises at least one wafer, at least one first wafer and at least one second wafer, wherein the first wafer comprises a plurality of first crystal grains which are arranged in an extending mode along a first direction, the first wafer further comprises a plurality of second crystal grains which are arranged in the extending mode along the first direction, and the second crystal grains are arranged adjacent to or at intervals with the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
the second wafer comprises a plurality of third crystal grains which are arranged in an extending mode along a first direction, and the second wafer further comprises a plurality of fourth crystal grains which are arranged in an extending mode along the first direction, and the fourth crystal grains are arranged adjacent to or spaced from the third crystal grains along a second direction;
At least one beam splitter splitting light emitted by the light source into at least a first light beam, a second light beam, a third light beam, and a fourth light beam;
the at least one polarizer comprises a first polarizer, a second polarizer, a third polarizer and a fourth polarizer, the first polarizer, the second polarizer, the third polarizer and the fourth polarizer are used for reflecting the first light beam, the second light beam, the third light beam and the fourth light beam respectively, and the first light beam, the second light beam, the third light beam and the fourth light beam respectively irradiate the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain;
the image sensing device is used for acquiring images of the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain; and
and the transmission device enables the first polarizer, the second polarizer, the third polarizer and the fourth polarizer to simultaneously generate relative movement along the first direction with the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain.
4. The detection apparatus according to any one of claims 1 to 3, wherein the light source comprises a coaxial light source or a dark field illumination mode.
5. The detection device according to any one of claims 1 to 3, wherein the light source comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
6. A testing device according to any of claims 1-3 wherein said image sensing means comprises an image sensor for capturing an image of said die.
7. The inspection device of claim 6, wherein the image sensor device further comprises a lens for magnifying and focusing the die onto the image sensor.
8. A test device according to any one of claims 1 to 3 wherein the beamsplitter comprises a planar beamsplitter.
9. A test device according to any of claims 1-3 wherein the beamsplitter comprises a non-polarizing beamsplitter.
10. The inspection device of claim 1, wherein the first die and the second die each comprise a plurality of pixel cells, the first die and the second die are each represented by a pixel matrix of the plurality of pixel cells, and the first light beam and the second light beam respectively illuminate the pixel cells of the same location of the first die and the second die.
11. The detecting device according to claim 2, wherein the first, second and third dies each include a plurality of pixel units, the first, second and third dies are represented by a pixel matrix made up of a plurality of pixel units, and the first, second and third beams respectively irradiate the pixel units at the same positions of the first, second and third dies.
12. The inspection device of claim 3, wherein each of the first die, the second die, the third die, and the fourth die comprises a plurality of pixel units, each of the first die, the second die, the third die, and the fourth die is represented by a pixel matrix formed by a plurality of pixel units, the first light beam and the second light beam respectively illuminate the pixel units of the first die and the second die at the same position, and the third light beam and the fourth light beam respectively illuminate the pixel units of the third die and the fourth die at the same position.
13. A method for detecting wafer defects, the method comprising at least the steps of:
Providing a light source;
providing a wafer, wherein the wafer comprises a plurality of first crystal grains which are arranged in an extending mode along a first direction, the wafer further comprises a plurality of second crystal grains which are arranged in an extending mode along the first direction, and the second crystal grains are adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
providing at least one beam splitter, the at least one beam splitter comprising a first beam splitter that splits light emitted by the light source into a first light beam and a second light beam;
providing a first polarizer for reflecting the first light beam, the first light beam illuminating the first die on the wafer;
providing a second polarizer for reflecting the second light beam, the second light beam illuminating the second die on the wafer;
providing an image sensing device, wherein the image sensing device is used for acquiring images of the first crystal grain and the second crystal grain; and
providing an actuator that causes relative movement of the first polarizer and the second polarizer and the first die and the second die, respectively, in the first direction simultaneously.
14. The method as claimed in claim 13, wherein the wafer further includes a plurality of third dies arranged extending along a first direction, the plurality of third dies being adjacent to or spaced apart from the plurality of first dies and the plurality of second dies along a second direction; the at least one beam splitter further comprises a second beam splitter, and the second beam splitter reflects or refracts a part of the light emitted by the light source into a third light beam; the image sensing device is also used for acquiring an image of the third crystal grain;
the detection device further comprises: a third polarizer for reflecting the third light beam, the third light beam illuminating the third die on the wafer; the actuator causes the first polarizer, the second polarizer, and the third polarizer to simultaneously generate relative movement along the first direction with the first die, the second die, and the third die, respectively.
15. A method for detecting wafer defects, the method comprising at least the steps of:
providing a light source;
providing at least one wafer, wherein the at least one wafer at least comprises a first wafer and a second wafer, the first wafer comprises a plurality of first crystal grains which are arranged in an extending mode along a first direction, the first wafer further comprises a plurality of second crystal grains which are arranged in an extending mode along the first direction, and the second crystal grains are arranged adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
The second wafer comprises a plurality of third crystal grains which are arranged in an extending mode along a first direction, and the second wafer further comprises a plurality of fourth crystal grains which are arranged in an extending mode along the first direction, and the fourth crystal grains are arranged adjacent to or spaced from the third crystal grains along a second direction;
providing at least one beam splitter, said at least one beam splitter splitting light emitted by said light source into at least a first light beam, a second light beam, a third light beam and a fourth light beam;
providing at least one polarizer, wherein the at least one polarizer comprises a first polarizer, a second polarizer, a third polarizer and a fourth polarizer, the first polarizer, the second polarizer, the third polarizer and the fourth polarizer are used for reflecting the first light beam, the second light beam, the third light beam and the fourth light beam respectively, and the first light beam, the second light beam, the third light beam and the fourth light beam respectively irradiate the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain;
providing an image sensing device, wherein the image sensing device is used for acquiring images of the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain; and
and providing a transmission device, wherein the transmission device enables the first polarizer, the second polarizer, the third polarizer and the fourth polarizer to simultaneously generate relative movement along the first direction with the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain.
16. The inspection method of any one of claims 13 to 15, wherein the light source comprises a coaxial light source or dark field illumination.
17. The detection method according to any one of claims 13 to 15, wherein the light source comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
18. The inspection method of any one of claims 13 to 15, wherein the image sensing device comprises an image sensor for capturing an image of the die.
19. The inspection method of claim 16, wherein the image sensor device further comprises a lens for magnifying and focusing the die onto the image sensor.
20. The detection method according to any one of claims 13 to 15, wherein the spectroscope comprises a planar spectroscope.
21. The detection method according to any one of claims 13 to 15, wherein the spectroscope comprises a non-polarizing spectroscope.
22. The method of claim 13, wherein the first die and the second die each include a plurality of pixel cells, the first die and the second die are each represented by a pixel matrix of the plurality of pixel cells, and the first light beam and the second light beam respectively illuminate the pixel cells of the first die and the second die at the same positions.
23. The method according to claim 14, wherein the first, second and third dies each comprise a plurality of pixel cells, the first, second and third dies are represented by a pixel matrix formed by the plurality of pixel cells, and the first, second and third beams respectively irradiate the pixel cells at the same positions of the first, second and third dies.
24. The method according to claim 15, wherein each of the first, second, third and fourth dies comprises a plurality of pixel units, the first, second, third and fourth dies are represented by a pixel matrix formed by a plurality of pixel units, the first and second beams respectively irradiate pixel units at the same positions of the first and second dies, and the third and fourth beams respectively irradiate pixel units at the same positions of the third and fourth dies.
25. The inspection method of any of claims 13-15, wherein said images of said first plurality of dies are compared to obtain said wafer defect, and said images of said second plurality of dies are compared to obtain said wafer defect.
26. The inspection method of any of claims 13-15, wherein the image of the first die is compared to the image of the second die to obtain the wafer defect.
27. The method of claim 15, wherein the images of the plurality of third dies are compared to obtain the wafer defect, and wherein the images of the third dies are compared to the images of the fourth dies to obtain the wafer defect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910363691.4A CN111855662B (en) | 2019-04-30 | 2019-04-30 | Wafer defect detection device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910363691.4A CN111855662B (en) | 2019-04-30 | 2019-04-30 | Wafer defect detection device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111855662A true CN111855662A (en) | 2020-10-30 |
| CN111855662B CN111855662B (en) | 2023-07-25 |
Family
ID=72965070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910363691.4A Active CN111855662B (en) | 2019-04-30 | 2019-04-30 | Wafer defect detection device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111855662B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW519710B (en) * | 2001-10-18 | 2003-02-01 | United Microelectronics Corp | Optical wafer inspection apparatus |
| JP2009150910A (en) * | 2009-04-02 | 2009-07-09 | Lasertec Corp | Defect inspection device, defect inspection method, optical scanning device, and production method of semiconductor device |
| JP2010156703A (en) * | 2010-02-10 | 2010-07-15 | Negevtech Ltd | Method and system for high-speed online electrochemical detection of wafer defect |
| TW201124715A (en) * | 2010-01-13 | 2011-07-16 | Youngtek Electronics Corp | Detection device and detection method for detecting the appearance of LED |
| CN103247548A (en) * | 2012-02-09 | 2013-08-14 | 无锡华润上华科技有限公司 | Wafer defect detecting device and method |
| CN203203942U (en) * | 2013-04-19 | 2013-09-18 | 精映科技股份有限公司 | Wafer defect detection machine table |
| CN103646889A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | A method for detecting wafer defects |
| WO2018122814A1 (en) * | 2016-12-30 | 2018-07-05 | Istituto Nazionale Di Fisica Nucleare | Method and optical microscope for detecting particles having sub-diffractive size |
-
2019
- 2019-04-30 CN CN201910363691.4A patent/CN111855662B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW519710B (en) * | 2001-10-18 | 2003-02-01 | United Microelectronics Corp | Optical wafer inspection apparatus |
| JP2009150910A (en) * | 2009-04-02 | 2009-07-09 | Lasertec Corp | Defect inspection device, defect inspection method, optical scanning device, and production method of semiconductor device |
| TW201124715A (en) * | 2010-01-13 | 2011-07-16 | Youngtek Electronics Corp | Detection device and detection method for detecting the appearance of LED |
| JP2010156703A (en) * | 2010-02-10 | 2010-07-15 | Negevtech Ltd | Method and system for high-speed online electrochemical detection of wafer defect |
| CN103247548A (en) * | 2012-02-09 | 2013-08-14 | 无锡华润上华科技有限公司 | Wafer defect detecting device and method |
| CN203203942U (en) * | 2013-04-19 | 2013-09-18 | 精映科技股份有限公司 | Wafer defect detection machine table |
| CN103646889A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | A method for detecting wafer defects |
| WO2018122814A1 (en) * | 2016-12-30 | 2018-07-05 | Istituto Nazionale Di Fisica Nucleare | Method and optical microscope for detecting particles having sub-diffractive size |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111855662B (en) | 2023-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102438824B1 (en) | Defect detection and recipe optimization for inspection of 3D semiconductor structures | |
| US8885037B2 (en) | Defect inspection method and apparatus therefor | |
| JP3858571B2 (en) | Pattern defect inspection method and apparatus | |
| US11366069B2 (en) | Simultaneous multi-directional laser wafer inspection | |
| JP4625716B2 (en) | Defect inspection apparatus and defect inspection method | |
| US9217717B2 (en) | Two dimensional optical detector with multiple shift registers | |
| US7345755B2 (en) | Defect inspecting apparatus and defect inspection method | |
| KR101223881B1 (en) | An image forming method and an image forming apparatus | |
| US20100014083A1 (en) | Method and Apparatus for Inspecting Defects | |
| JP2005533996A (en) | Spot grid array imaging system | |
| KR101114729B1 (en) | High throughput across-wafer-variation mapping | |
| KR20180045817A (en) | Polarized image acquiring apparatus, pattern inspecting apparatus, polarized image acquiring method, pattern inspecting method | |
| KR101650138B1 (en) | Multiple surface inspection system and method | |
| JP2015062022A (en) | Device configured to inspect wafer | |
| JP2004012301A (en) | Method and apparatus for detecting pattern defect | |
| JP2010536034A5 (en) | ||
| KR101523336B1 (en) | apparatus for examining pattern image of semiconductor wafer | |
| TWI829958B (en) | System and method for inspecting semiconductor devices | |
| US8049897B2 (en) | Reticle defect inspection apparatus and inspection method using thereof | |
| CN111855662B (en) | Wafer defect detection device and method | |
| JP2008175818A (en) | Surface inspection apparatus and method | |
| KR20080098811A (en) | Surface measurement apparatus | |
| KR101507950B1 (en) | apparatus for examining pattern image of semiconductor wafer | |
| KR101146922B1 (en) | Optical detection module for Wafer inspection | |
| WO2019244303A1 (en) | Wavefront sensor, wavefront measurement device, and wavefront measurement method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |