KR101146922B1 - Optical detection module for Wafer inspection - Google Patents

Optical detection module for Wafer inspection Download PDF

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Publication number
KR101146922B1
KR101146922B1 KR1020100079937A KR20100079937A KR101146922B1 KR 101146922 B1 KR101146922 B1 KR 101146922B1 KR 1020100079937 A KR1020100079937 A KR 1020100079937A KR 20100079937 A KR20100079937 A KR 20100079937A KR 101146922 B1 KR101146922 B1 KR 101146922B1
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KR
South Korea
Prior art keywords
image
wafer
detector
detection module
image sensor
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KR1020100079937A
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Korean (ko)
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KR20120017314A (en
Inventor
이준호
임재원
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(주)오로스 테크놀로지
주식회사 에프에스티
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Priority to KR1020100079937A priority Critical patent/KR101146922B1/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • G01N2021/558Measuring reflectivity and transmission

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical detection module for inspecting wafers, the detection module for optically acquiring a wafer image from an inspection apparatus for inspecting a defect of a semiconductor wafer, wherein the wafer image is reflected after irradiating illumination light onto the inspection target wafer. A beam splitter for separating, a prism unit for transmitting and reflecting each image separated through the beam splitter, and determining a moving direction, and obtaining an image transmitted and reflected through the prism unit, but spaced apart at a predetermined distance based on one direction And a second detector comprising a plurality of image sensors for acquiring the remaining area other than the image area acquired through the first detector, and a first detector configured to respectively acquire an image area. . Through the prism unit configured as described above, the image sensor can eliminate structural interference, and thus, high-speed detection is possible by acquiring images of many areas at once, and between the images obtained by the first detector and the second detector. There is an advantage that can be detected without overlapping the dark zone of the wafer acquisition image.

Description

Optical detection module for wafer inspection

The present invention relates to an optical detection module for inspecting wafers, and more specifically, to detect defects of wafers on the peninsula, a wide inspection area is acquired at a time for defect inspection of several tens of nanometers to several hundred nanoscales. The present invention relates to an optical detection module for wafer inspection capable of high-speed detection and improving detection accuracy.

Semiconductor wafer inspection equipment inspects defects of various sizes ranging from defects of tens of nanometers to defect inspection of tens of microns. However, semiconductor micro-inspection equipment is a device that detects wafer defects of several hundred nanometers or less and is composed of three to five kinds of lenses so that the magnification of the objective lens can be enlarged from about 10 * to 100 *.

However, in general, when only one camera is applied and the objective is applied with a high magnification (here, 50x magnification), the field of view that can be grabbed from the camera is only 1 to 200 micro. If a 300mm wafer is inspected from the front of the wafer with a field of view (FOV) of one to two hundred microns, the inspection may take several hours to inspect one wafer. Therefore, it is not bonded for application to a line for producing a wafer. In this case, however, only sampling inspection for sampling and inspecting a portion of wafers in a production line is inevitable. However, if the sampling test is performed, defects may occur in the untested wafer, which may cause a large damage to the yield of the line, and many other damages may occur.

1 is a view schematically showing an optical detection module of a wafer inspection equipment as an example according to the prior art. As shown in the drawing, the incident or reflected light is incident on the wafer, and first, the beam splitter is separated into a plurality of directions through a plurality of beam splitters, and then each area is acquired by an image sensor located in each direction.

However, in the prior art, since each image is obtained by dividing a large incident image by using a right angle prism, a prism is required in proportion to the size of the image to be acquired, and thus the prism alignment is an important factor. Can be. Even if the alignment of the prism is slightly misaligned, the image may be distorted, and alignment may also be a difficult process. As each individual prism is used, a dark zone may occur in which no image is acquired between the prisms. In addition, in order to increase the size of the image to be acquired, more prism, which is a tool for dividing and acquiring images, should be arranged.

Therefore, in order to inspect the defect size of several tens of nanometers to hundreds of nanometers, and to inspect the entire surface of the wafer within minutes, the optical detection module enables the camera to acquire an image with a very large area that can be acquired at a time. It is necessary to configure the image sensor efficiently in order to acquire images.

In order to solve the above problems, the present invention can obtain images of many areas at once by effectively arranging a plurality of image sensors and mapping wafer images, thereby enabling high-speed measurement and improving detection power. An object of the present invention is to provide an optical detection module for wafer inspection.

The present invention for achieving the above object is in the detection module for optically obtaining a wafer image in the inspection equipment for inspecting the defect of the semiconductor wafer, for separating the reflected wafer image after irradiating the light to the inspection target wafer A beam splitter, a prism unit that transmits and reflects each image separated by the beamsplitter to determine a traveling direction, and obtains an image transmitted and reflected through the prism unit, but an image region spaced at a predetermined interval based on one direction And a second detection unit including a first detection unit including a plurality of image sensors respectively obtaining a plurality of image sensors, and a second detection unit including a plurality of image sensors acquiring a remaining region other than the image area acquired through the first detection unit.

In addition, the prism unit is configured by overlapping four triangular prisms to form one block, the reflective surface is coated on one side of the overlapping triangular prism, and the blocks are continuously arranged such that the reflective surfaces are alternately positioned. A prism unit is formed, and the first detection unit and the second detection unit are respectively provided.

In addition, the image sensor provided in the first detection unit and the second detection unit, the image sensor provided in one block and the image sensor provided in the next block is characterized in that arranged to be spaced apart from each other.

The first detector and the second detector are each provided with a plurality of image sensors, and alternately acquire a wafer image in an x-axis direction and / or a y-axis direction of the wafer image.

In addition, each of the image sensor, characterized in that for obtaining the image transmitted and reflected through the prism unit from each other direction.

The image acquired by the first detector and the second detector may be obtained by moving the prism unit to overlap the image.

According to the present invention configured as described above, in consideration of the arrangement characteristics of the image sensor for defect detection of the wafer, the image mapping can be effectively configured through the arrangement of the image sensor to detect the wafer image, thereby simultaneously acquiring images of many regions at once. And, accordingly, there is an advantage capable of high speed detection.

In addition, through the blocked prism unit, image alignment is very easy, and as a result, a more accurate image can be easily obtained, and structurally, there is an advantage of increasing stability.

In addition, it is possible to achieve more accurate detection performance by removing the dark zone (Drakzone) that cannot acquire an image by overlapping the sensor and the sensor in the image acquisition process.

1 is a schematic view showing an example of an optical detection module for wafer inspection according to the prior art;
2 is a schematic configuration diagram of an optical detection module for wafer inspection according to the present invention;
3 is a view showing the structure of a prism used in the optical detection module according to the present invention;
4 is a view showing an example of the arrangement of the image sensor when the image is acquired by using the prism shown in FIG.
5 is an enlarged view and an acquisition area of an optical detection module for inspecting wafers according to the present invention;
6 is a front view showing a state of the planar image sensor arrangement of the optical detection module according to the present invention;
7 is a view showing an acquisition area obtained through image overlap of the optical detection module according to the present invention.

Hereinafter, exemplary embodiments of an optical detection module for inspecting a wafer according to the present invention will be described in detail with reference to the accompanying drawings.

The optical detection module for wafer inspection according to the present invention is a detection module for optically acquiring a wafer image from an inspection apparatus for inspecting a defect of a semiconductor wafer, and separating the reflected wafer image after irradiating illumination light onto the inspection target wafer. The beam splitter 100, a prism unit 110 for transmitting and reflecting each image separated through the beam splitter to determine a traveling direction, and obtaining an image transmitted and reflected through the prism unit, based on one direction. The first detection unit 200 is composed of a plurality of image sensors to obtain an image area spaced at regular intervals, respectively, and the second detection unit is composed of a plurality of image sensors to acquire the remaining area other than the image area obtained through the first detection unit ( And 210).

In the optical inspection module for wafer inspection according to the present invention, by arranging an array structure of image sensors (CCD or CMOS sensor) in an optical module for acquiring a defect of a wafer as an inspection object, images of many areas can be simultaneously and quickly The main technical point of the present invention is to provide an optical detection module that can acquire and improve detection power by eliminating dark zones by overlapping the images acquired at each interval.

Although not shown in the present invention, a schematic configuration of a wafer inspection apparatus may include: an optical detection module including a cassette in which a wafer is accommodated, lighting means for irradiating illumination light for obtaining a wafer image, and an image sensor mentioned in the present invention; It consists of a terminal (image processing device, an image processing device) for analyzing the defect through the acquired image, such a configuration of the wafer inspection equipment may be configured differently depending on the detection characteristics.

In order to detect the wafer image, the inspection target wafer is irradiated with illumination light through an illuminating means (not shown), and the reflected light (image) is then transmitted through a plurality of optical transmission media (optical media such as convex lenses, concave lenses, and beam splitters). The light is transmitted and incident to the detector, that is, the image sensor. In the present invention, an optical detection module for acquiring a wafer image incident through an optical medium is constructed.

2 is a schematic configuration diagram of an optical detection module for wafer inspection equipment according to the present invention. In the present invention, the beam splitter 100, the first detector 200, and the second detector 210 are largely configured to effectively acquire a wafer image. The beam splitter 100 separates the image reflected from the wafer and delivers the two beam paths. In this case, the separated images are acquired by the first detector 200 and the second detector 210, each of which is configured as an image sensor.

The prism unit 110 is provided to separate the two images separated through the beam splitter again. That is, one prism unit is provided to separate one image separated by the beam splitter again, and one prism unit is provided to separate another image.

In the most preferred embodiment of the present invention, an image region incident from a wafer through a beam splitter and a prism unit is divided into four image regions, and acquired through two image regions through a first detector and a second detector for the remaining two image regions. Obtained from

3 is a view showing the structure of a prism used in the optical detection module according to the present invention. As shown, the prism unit 110 applied to the present invention forms one block having four triangular prisms in contact with each other to form a quadrilateral shape. At this time, one prism side (half area in the diagonal direction) is coated with a reflective surface. When light is incident on a prismatic quadrangular prism, half is reflected by the reflective surface and the other half is transmitted. The prismatic units are formed in contact with these blocks in succession, but the reflective surface has a structure coated alternately in half with respect to the diagonal direction. Therefore, reflection and transmission are made in opposite directions for each block.

4 is a diagram illustrating an example of arranging an image sensor when an image is acquired using the prism shown in FIG. 3. The image incident on the detector by the prism unit having the above-described structure can easily implement the arrangement structure of the image sensor. Images can be obtained at high speed while arranging to avoid structural interference between the image sensors.

In this case, as the main technical gist of the present invention, the image sensors configured in the first detection unit and the second detection unit are acquired for the wafer image, wherein the images are spaced apart at regular intervals based on one direction (x axis), respectively, and the y axis A second detection unit including a plurality of image sensors configured to acquire images spaced at a predetermined interval based on a direction, and configured to acquire an image outside the area obtained by the first detector; 210 is provided.

In more detail, one image sensor provided in the first detection unit 200 is disposed on one side of the prism (the optical path surface reflected through the prism), and another image sensor is provided on the other side of the prism (prism). Light path through the light path). As an example, as shown in FIG. 4, a prism unit is provided in each of the first and second detection units, and an example of acquiring four image regions is described below. First, the first image region is defined by the reflection surface of the prism block. Acquire. The image sensor acquires the next area through the prism unit in the second detection unit. Since the image sensor cannot be disposed next to the area where the A image sensor is provided, the next area of the A area is acquired by the second detector. In the third region, the C image sensor of the first detector acquires the image passing through the prism unit, and the D image sensor of the second detector of the second detector acquires the reflected image. In this way, the image of one line is acquired through the A ~ D image sensor, and the next image is obtained through the image sensor provided in the next block. The image sensor provided in one block of one detection and the image provided in the next block Sensors should be arranged so that they do not touch each other. In this way, interference between the acquired images between the sensors can be eliminated, and for this purpose, the reflection surfaces between the blocks are alternately arranged, and the position of the sensor is determined accordingly.

5 is an enlarged view and an acquisition area of the optical detection module for wafer inspection equipment according to the present invention. Here, the image sensor unit A of the first detection unit acquires the corresponding image for the area of the image pixel 1 line as described above. The image acquired by the image sensor corresponds to light reflected through the prism unit, and the image transmitted through the prism unit obtains the light transmitted through the prism unit from the image sensor unit B of the first detection unit. .

In addition, the area not acquired by the A and B image sensors is easily acquired without structural interference between the sensors when the image of one line is acquired by the image sensor C and the image sensor D provided in the second detection unit. can do.

In addition, as shown in FIG. 5, in order to acquire an image of the next line, an image sensor positioned in the next block of the prism unit is acquired. In this case, in order to avoid structural interference between the image sensors, the image obtained by the A image sensor may be The B image sensor acquires, and the image acquired by the B image sensor is acquired by the A image sensor. The structure of the second detection unit is similarly implemented. In the drawing, the X region corresponds to a region where an image does not enter due to reflection and transmission. In addition, in order to arrange the image sensor on the reflective surface and the transmission surface, the image sensor is disposed on each other surface of the prism unit.

6 is a front view showing a state of the planar image sensor arrangement of the optical detection module according to the present invention. As shown in the drawing, acquiring the areas where the first detection unit and the second detection unit cross each other with respect to the whole image of the wafer may cause structural interference by continuously arranging a plurality of image sensors in the structural characteristics of the image sensor. Therefore, it includes a purpose that can easily achieve the arrangement of the image sensor by having a spaced array structure.

7 is a diagram illustrating an acquisition area obtained through image overlap of the optical detection module according to the present invention. In the present invention, in order to remove the dark zone of the obtained wafer image, an image is acquired by overlapping a region acquired by the image sensor at a predetermined region during image acquisition. In the conventional optical detection module, a dark zone is generated between the region and the region obtained through each image sensor due to optical interference, and thus it is difficult to obtain an accurate image. Therefore, defect detection is impossible or difficult. Accordingly, in the present invention, the image image obtained by the image sensor overlaps a predetermined interval to obtain an accurate image of the corresponding region, which is structurally moved by the aforementioned prism unit to overlap the image sensor obtained image by a predetermined interval, the image of the region. Can be obtained accurately.

The present invention configured as described above constitutes at least two detection units, and the image sensors of the two detection units are acquired in an alternating area with respect to the image area in the x-axis direction and / or the y-axis direction through a plurality of image sensors, respectively. It is possible to measure and remove the dark zone region by acquiring the region obtained through the image sensor by overlapping a predetermined interval.

As described above and illustrated with reference to a preferred embodiment for illustrating the principles of the invention, the invention is not limited to the configuration and operation as shown and described as such. On the contrary, those skilled in the art will appreciate that many modifications and variations of the present invention are possible without departing from the spirit and scope of the appended claims. And all such modifications and changes as fall within the scope of the present invention are therefore to be regarded as being within the scope of the present invention.

100 beam splitter 110 prism unit
200: first detection unit 201: image sensor
202: image sensor 210: second detection unit
211: image sensor unit 212: image sensor

Claims (6)

  1. A detection module for optically acquiring a wafer image in an inspection apparatus for inspecting a defect of a semiconductor wafer,
    A beam splitter configured to separate the reflected wafer image after irradiating illumination light onto the inspection target wafer;
    A prism unit which transmits and reflects each image separated by the beam splitter to determine a traveling direction;
    A first detector configured to acquire an image transmitted and reflected through the prism unit, and to obtain an image area spaced apart from each other by one direction; And
    And a second detector configured to acquire a plurality of image sensors other than the image area acquired through the first detector.
    Each image sensor provided in the first detector and the second detector is configured to obtain an image transmitted and reflected through the prism unit in different directions, respectively.
  2. The method of claim 1, wherein the prism unit,
    Four triangular prisms are stacked to form a block, and one triangular prism overlaps one side of the reflective surface, and the blocks are continuously arranged to alternately position the reflective surfaces to form a prism unit. An optical detection module for inspecting a wafer, wherein the first detection unit and the second detection unit are respectively provided.
  3. The image sensor of claim 2, wherein the image sensor provided in the first detector and the second detector,
    The image sensor provided in one block and the image sensor provided in the next block are arranged to be spaced apart from each other optical detection module for wafer inspection.
  4. The wafer of claim 1, wherein each of the first and second detectors includes a plurality of image sensors, and alternately acquires a wafer image with respect to the x-axis direction or the y-axis direction of the wafer image. Inspection optical detection module.
  5. delete
  6. The method of claim 1,
    And an image acquired by the first detector and the second detector is obtained by moving the prism unit to overlap the image.
KR1020100079937A 2010-08-18 2010-08-18 Optical detection module for Wafer inspection KR101146922B1 (en)

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Publication number Priority date Publication date Assignee Title
KR101686918B1 (en) * 2014-09-24 2016-12-16 주식회사 고영테크놀러지 Optical image detecting apparatus
KR101876934B1 (en) * 2016-05-10 2018-07-12 한미반도체 주식회사 Vision Detecting Device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000064347A (en) * 1996-09-07 2000-11-06 요트.게.아. 롤페즈 Image sensor
KR20070056327A (en) * 2005-11-29 2007-06-04 삼성전자주식회사 Method for scanning of a substrate and method and apparatus for inspecting characteristic of crystal
KR20080077929A (en) * 2007-02-21 2008-08-26 에이에스엠엘 네델란즈 비.브이. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
KR100910175B1 (en) 2009-04-06 2009-07-30 (주)에이직뱅크 Image sensor for generating a three dimensional image

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000064347A (en) * 1996-09-07 2000-11-06 요트.게.아. 롤페즈 Image sensor
KR20070056327A (en) * 2005-11-29 2007-06-04 삼성전자주식회사 Method for scanning of a substrate and method and apparatus for inspecting characteristic of crystal
KR20080077929A (en) * 2007-02-21 2008-08-26 에이에스엠엘 네델란즈 비.브이. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
KR100910175B1 (en) 2009-04-06 2009-07-30 (주)에이직뱅크 Image sensor for generating a three dimensional image

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