CN111855662B - Wafer defect detection device and method - Google Patents
Wafer defect detection device and method Download PDFInfo
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- CN111855662B CN111855662B CN201910363691.4A CN201910363691A CN111855662B CN 111855662 B CN111855662 B CN 111855662B CN 201910363691 A CN201910363691 A CN 201910363691A CN 111855662 B CN111855662 B CN 111855662B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8803—Visual inspection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
Abstract
The invention provides a wafer defect detection device and a method, wherein the detection device at least comprises: a light source; a wafer comprising a plurality of first dies and a plurality of second dies; a beam splitter that splits light emitted from the light source into a first light beam and a second light beam; a polarizer for reflecting the first and second light beams onto the first and second dies, respectively; and an actuator that causes the first and second polarizers to simultaneously produce relative movement in the first direction with the first and second dies, respectively. The detection device changes the light source into 2 light source waves with the same wavelength and property, changes the detection mode of the detection device into a mode of 2 rows of the same rows or 2 columns of the same rows, adds a transmission device on the polarizer, and ensures the accuracy of the irradiation position of the detection light through the translation in the X direction, thereby greatly improving the optical detection speed and the detection throughput.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a device and a method for detecting wafer surface defects.
Background
In the field of semiconductor fabrication, it is necessary to form a pattern on the surface of a wafer by photolithography to obtain a structure required for design. In the photolithography process, the patterns formed by photolithography on the wafer surface may be defective due to the influence of photolithography plates, photoresist and other factors, so that the patterns on the wafer surface need to be detected to determine whether the wafer and the dies thereon meet the requirements. Defects on the surface of a semiconductor wafer are the most important parts of all wafer foundry for wafer yield, and at the same time, how to detect defects on the surface of the wafer is also important. The optical inspection method is one of the most commonly used wafer inspection methods because it has the advantages of not damaging the cleanliness of the wafer surface, being capable of real-time inspection, and the like. The optical detection method uses an optical scattering intensity measurement technology to detect whether particles exist on the surface of the wafer, the spatial distribution of the particles on the surface of the wafer, and the like.
The light source optically detected today is shifted from the original first die to the right or down until the last die of the row or column, and then back to the second row or column and then likewise shifted from the first die of the row or column. Fig. 1 is a schematic diagram of an optical inspection apparatus for wafer defects in the prior art, where the inspection apparatus includes a light source 101, a polarizer 102, and a wafer 103, and light emitted from the light source 101 is reflected by the polarizer 102 and then irradiated onto the wafer 103. Wherein the wafer 103 includes a plurality of dies. As shown in fig. 2, the optical inspection apparatus shown in fig. 1 is used to inspect a wafer 103, wherein the wafer 103 includes a plurality of dies a-T, and the plurality of dies a-T are divided into 5 rows aligned along a Y-axis, each row having 4 dies aligned along an X-axis; the optical inspection device starts scanning from the die a and moves in parallel along the X-axis direction, starts scanning the second row after scanning the first row, and so on.
However, in the case of 12-inch wafers becoming more popular and smaller in size, this inspection method has drawbacks in that:
1. the number of rows or columns of wafers to be moved is increased;
2. this way of moving the light source slows down the speed and throughput of the optical detection.
Therefore, how to increase the optical detection speed and increase the detection throughput is a technical problem that needs to be solved by the current optical detection technology.
Disclosure of Invention
In view of the above, the embodiments of the present invention provide a wafer defect detecting device and method, so as to solve the problems of slow speed and throughput of optical detection in the prior art.
According to a first aspect, an embodiment of the present invention provides a wafer defect detection apparatus, where the detection apparatus at least includes:
a light source;
a wafer including a plurality of first dies arranged to extend along a first direction, the wafer further including a plurality of second dies arranged to extend along the first direction, the plurality of second dies being adjacent to or spaced apart from the plurality of first dies along a second direction; wherein the first direction and the second direction are perpendicular to each other;
at least one beam splitter comprising a first beam splitter that splits light emitted by the light source into a first beam and a second beam;
A first polarizer for reflecting the first light beam, the first light beam illuminating the first die on the wafer;
a second polarizer for reflecting the second light beam, the second light beam illuminating the second die on the wafer;
an image sensing device for acquiring images of the first die and the second die; and
and the transmission device enables the first polarizer and the second polarizer to generate relative movement along the first direction simultaneously with the first crystal grain and the second crystal grain respectively.
Optionally, the wafer further includes a plurality of third grains extending along the first direction, and the plurality of third grains are adjacent to or spaced from the plurality of first grains and the plurality of second grains along the second direction; the at least one beam splitter further comprises a second beam splitter that reflects or refracts a portion of the light emitted by the light source into a third light beam; the image sensing device is also used for acquiring an image of the third crystal grain;
the detection device further includes: a third polarizer for reflecting the third light beam, the third light beam illuminating the third die on the wafer; the actuator causes the first, second and third polarizers to simultaneously produce relative movement in the first direction with the first, second and third dies, respectively.
According to a second aspect, the present invention provides a wafer defect detection apparatus, the detection apparatus at least comprising:
a light source;
at least one wafer comprising at least a first wafer and a second wafer, the first wafer comprising a plurality of first dies arranged along a first direction, the first wafer further comprising a plurality of second dies arranged along the first direction, the plurality of second dies arranged along a second direction adjacent to or spaced apart from the plurality of first dies; wherein the first direction and the second direction are perpendicular to each other;
the second wafer comprises a plurality of third crystal grains which are arranged along the first direction in an extending way, and a plurality of fourth crystal grains which are arranged along the first direction in an extending way, wherein the fourth crystal grains are adjacent to or are arranged at intervals in the second direction;
at least one beam splitter that splits light emitted by the light source into at least a first beam, a second beam, a third beam, and a fourth beam;
at least one polarizer including first, second, third and fourth polarizers for reflecting the first, second, third and fourth light beams, respectively, the first, second, third and fourth light beams illuminating the first, second, third and fourth dies, respectively;
An image sensing device for acquiring images of the first, second, third, and fourth dies; and
and the transmission device enables the first polarizer, the second polarizer, the third polarizer and the fourth polarizer to generate relative movement along the first direction simultaneously with the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain respectively.
Optionally, the light source comprises an on-axis light source or adopts a dark field illumination mode.
Optionally, the light source comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
Optionally, the image sensing device includes an image sensor for capturing an image of the die.
Optionally, the image sensing device further comprises a lens for magnifying and focusing the die to the image sensor.
Optionally, the beam splitter comprises a planar beam splitter.
Optionally, the beam splitter comprises a non-polarizing beam splitter.
Optionally, the first die and the second die each include a plurality of pixel units, the first die and the second die are respectively represented by a pixel matrix formed by the plurality of pixel units, and the first light beam and the second light beam respectively irradiate the pixel units at the same positions of the first die and the second die.
Optionally, the first die, the second die and the third die each include a plurality of pixel units, the first die, the second die and the third die are respectively represented by a pixel matrix formed by the plurality of pixel units, and the first light beam, the second light beam and the third light beam respectively irradiate the pixel units at the same positions of the first die, the second die and the third die.
Optionally, the first die, the second die, the third die and the fourth die each include a plurality of pixel units, the first die, the second die, the third die and the fourth die are respectively represented by a pixel matrix formed by the plurality of pixel units, the first light beam and the second light beam respectively irradiate the pixel units at the same positions of the first die and the second die, and the third light beam and the fourth light beam respectively irradiate the pixel units at the same positions of the third die and the fourth die.
According to a third aspect, an embodiment of the present invention provides a method for detecting a wafer defect, the method at least includes:
providing a light source;
providing a wafer, wherein the wafer comprises a plurality of first crystal grains extending along a first direction, and a plurality of second crystal grains extending along the first direction, and the second crystal grains are adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
Providing at least one beam splitter, the at least one beam splitter comprising a first beam splitter that splits light emitted by the light source into a first beam and a second beam;
providing a first polarizer for reflecting the first light beam, the first light beam illuminating the first die on the wafer;
providing a second polarizer for reflecting the second light beam, the second light beam illuminating the second die on the wafer;
providing an image sensing device for acquiring images of the first die and the second die; and
an actuator is provided that causes relative movement of the first and second polarizers in the first direction simultaneously with the first and second dies, respectively.
Optionally, the wafer further includes a plurality of third grains extending along the first direction, and the plurality of third grains are adjacent to or spaced from the plurality of first grains and the plurality of second grains along the second direction; the at least one beam splitter further comprises a second beam splitter that reflects or refracts a portion of the light emitted by the light source into a third light beam; the image sensing device is also used for acquiring an image of the third crystal grain;
The detection device further includes: a third polarizer for reflecting the third light beam, the third light beam illuminating the third die on the wafer; the actuator causes the first, second and third polarizers to simultaneously produce relative movement in the first direction with the first, second and third dies, respectively.
According to a fourth aspect, the present invention provides a wafer defect detection method, the method at least comprising the steps of:
providing a light source;
providing at least one wafer, wherein the at least one wafer at least comprises a first wafer and a second wafer, the first wafer comprises a plurality of first crystal grains which are arranged along a first direction in an extending way, and the first wafer also comprises a plurality of second crystal grains which are arranged along the first direction in an extending way, and the plurality of second crystal grains are adjacent to or are arranged at intervals with the plurality of first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
the second wafer comprises a plurality of third crystal grains which are arranged along the first direction in an extending way, and a plurality of fourth crystal grains which are arranged along the first direction in an extending way, wherein the fourth crystal grains are adjacent to or are arranged at intervals in the second direction;
Providing at least one beam splitter that splits light emitted by the light source into at least a first beam, a second beam, a third beam, and a fourth beam;
providing at least one polarizer comprising a first polarizer, a second polarizer, a third polarizer and a fourth polarizer for reflecting the first, second, third and fourth light beams, respectively, the first, second, third and fourth light beams illuminating the first, second, third and fourth dies, respectively;
providing an image sensing device for acquiring images of the first, second, third and fourth dies; and
a transmission device is provided, and the transmission device enables the first polarizer, the second polarizer, the third polarizer and the fourth polarizer to generate relative movement along the first direction simultaneously with the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain respectively.
Optionally, the light source comprises an on-axis light source or adopts a dark field illumination mode.
Optionally, the light source comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
Optionally, the image sensing device includes an image sensor for capturing an image of the die.
Optionally, the image sensing device further comprises a lens for magnifying and focusing the die to the image sensor.
Optionally, the beam splitter comprises a planar beam splitter.
Optionally, the beam splitter comprises a non-polarizing beam splitter.
Optionally, the first die and the second die each include a plurality of pixel units, the first die and the second die are respectively represented by a pixel matrix formed by the plurality of pixel units, and the first light beam and the second light beam respectively irradiate the pixel units at the same positions of the first die and the second die.
Optionally, the first die, the second die and the third die each include a plurality of pixel units, the first die, the second die and the third die are respectively represented by a pixel matrix formed by the plurality of pixel units, and the first light beam, the second light beam and the third light beam respectively irradiate the pixel units at the same positions of the first die, the second die and the third die.
Optionally, the first die, the second die, the third die and the fourth die each include a plurality of pixel units, the first die, the second die, the third die and the fourth die are respectively represented by a pixel matrix formed by the plurality of pixel units, the first light beam and the second light beam respectively irradiate the pixel units at the same positions of the first die and the second die, and the third light beam and the fourth light beam respectively irradiate the pixel units at the same positions of the third die and the fourth die.
Optionally, the images of the plurality of first dies are compared to obtain the wafer defect, and the images of the plurality of second dies are compared to obtain the wafer defect.
Optionally, comparing the image of the first die with the image of the second die to obtain the wafer defect.
Optionally, comparing the images of the plurality of third dies to obtain the wafer defect, and simultaneously comparing the images of the third dies with the images of the fourth dies to obtain the wafer defect.
According to the detection device and the detection method, a new optical means is used in the optical detection device to enable the light source to be changed into 2 light source waves with the same wavelength and property, the detection mode of the detection device is changed into a mode of 2 rows of the same rows or 2 columns of the same rows, the transmission device is additionally arranged on the polarizer, and the accuracy of the irradiation position of the detection light is ensured through the translation in the X direction, so that the optical detection speed is greatly improved, and the detection throughput is improved. In addition, besides comparing the left and right 2 grains to find out the wafer defect, the comparison can be increased again up and down, namely, the grains in the previous row are compared with the grains in the next row, so that the detection speed and the detection precision can be further improved.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and should not be construed as limiting the invention in any way, in which:
FIG. 1 is a schematic diagram of an optical inspection apparatus for wafer defects in the prior art.
Fig. 2 is a schematic diagram of a method for inspecting a wafer using the optical inspection apparatus shown in fig. 1 in the prior art.
FIG. 3 is a schematic diagram of a wafer defect inspection apparatus according to the present invention.
Fig. 4 is a schematic diagram showing a wafer defect detecting method for detecting a wafer by using the wafer defect detecting apparatus shown in fig. 3 according to the present invention.
Fig. 5 is a schematic diagram showing an improved embodiment of the wafer defect detecting apparatus of the present invention.
Fig. 6 is a schematic diagram illustrating the principle of improving the optical inspection speed according to the present invention, wherein fig. 6 (a) is a wafer inspection method in the prior art, and fig. 6 (b) is a wafer inspection method according to the present invention.
FIG. 7 is a flow chart of a method for detecting wafer defects according to the present invention.
Fig. 8 is a schematic diagram of another embodiment of a wafer defect detecting apparatus according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
Example 1
Fig. 3 is a schematic diagram of a wafer defect detecting device according to the present invention, and fig. 4 is a schematic diagram of a wafer defect detecting method for detecting a wafer by using the wafer defect detecting device shown in fig. 3 according to the present invention. Referring to fig. 3 to 4, the detection device at least comprises: a light source 301; a wafer 303, wherein the wafer 303 includes a plurality of first dies A, F, K, P extending and arranged along a first direction, and the first direction is along an X-axis direction; the wafer 303 further includes a plurality of second dies C, H, M, R extending and arranged along a first direction, the plurality of second dies being spaced apart from the plurality of first dies along a second direction, the second direction being along a Y-axis direction, and the first direction and the second direction being perpendicular to each other. The plurality of second dies may also be second dies, such as die B, G, L, Q, arranged adjacent to the plurality of first dies of the first row. The detection device further comprises: a beam splitter 304, wherein the beam splitter 304 splits the light emitted by the light source 301 into a first light beam and a second light beam; a first polarizer 302, the first polarizer 302 being configured to reflect the first light beam, the first light beam illuminating the first die A, F, K, P on the wafer 303; a second polarizer 306, the second polarizer 306 being configured to reflect the second light beam, the second light beam illuminating the second die C, H, M, R on the wafer 303; an image sensing device (not shown) for acquiring images of the first die A, F, K, P and the second die C, H, M, R; and an actuator 307, the actuator 307 causing the first and second polarizers 302 and 306 to simultaneously generate relative movements in the first direction with the first and second dies, respectively. The relative movement may be generated by moving the polarizers 302, 306 with the wafer 303 stationary by the actuator 307, by moving the wafer 303 with the actuator 307 stationary, or by both.
Optionally, the actuator 307 moves the first polarizer 302 and the second polarizer 306 in parallel in the first direction at the same time. As shown in fig. 4, in the home position, the first light beam irradiates the crystal grain a, while the second light beam irradiates the crystal grain C; the first and second beams are driven by the actuator 307 to move in parallel along the X-axis direction while scanning each first die in the first row and each second die in the third row. After the first and third rows of dies are scanned, the first beam is moved to the start position of the second row, the second beam is moved to the start position of the fourth row, and the row scanning operation is performed again, and so on.
The detection device uses a new optical means to change a light source into 2 light source waves with the same wavelength and property, two light sources which are not interfered with each other irradiate on a wafer at the same time to perform the same-direction light path detection, the detection mode of the detection device is changed into a mode of 2 rows of the same rows or 2 columns of the same rows, two rows or two columns of crystal grains can be scanned at one time and a defect detection result is provided, a transmission device is additionally arranged on a polarizer, and the accuracy of the irradiation position of detection light is ensured through the translation of the X direction, so that the optical detection speed is greatly improved and the detection throughput is improved. After the detection light passes through the surface of the wafer to finish detection, the reflected light is subjected to signal collection through the original image sensing device to perform detection, so that the modification cost of the wafer detection device is not required to be greatly increased.
The light source 301 includes a coaxial light source or adopts a dark field illumination mode, and the light source 301 includes a xenon lamp, a halogen lamp, an LED or a laser light source.
The image sensing device (not shown) includes an image sensor for capturing images of the first die and the second die; the image sensing device further includes a lens for magnifying and focusing the first die and the second die to the image sensor.
The beam splitter 304 includes a planar beam splitter or a non-polarizing beam splitter, which is used to convert the light emitted from the light source 301 into 2 first and second light beams with the same wavelength and property.
In order to enable the second beam to accurately illuminate the second die, the wafer defect inspection apparatus further includes a mirror or polarizer 305 to reflect the second beam exiting the beam splitter 304 to a second polarizer 306.
In performing defect detection on the wafer 303, the images of the plurality of first dies A, F, K, P are compared to obtain the wafer 303 defect, and the images of the plurality of second dies C, H, M, R are compared to obtain the wafer defect. For example, the image of grain F may be compared with the images of grain A and grain K to ascertain whether grain F has defects; comparing the image of the crystal grain H with the images of the crystal grain C and the crystal grain M to thereby know whether the crystal grain H has a defect. Besides comparing the left and right 2 grains in the same row to find out the wafer defect, the comparison can be increased up and down again, namely, the grains in the previous row are compared with the grains in the next row, so that the detection speed and the detection precision can be further improved. For example, the image of grain F may be compared with the image of grain H, and the result of comparing the image of grain F with the images of grain a and grain K may be combined to further determine whether grain F has a defect.
Example two
Unlike the first embodiment, the embodiment of the present invention provides a wafer defect detecting device including a plurality of spectroscopes, and the same reference numerals are used for the same components as those of the first embodiment. The detection device at least comprises: a light source 301; a wafer 303, wherein the wafer 303 includes a plurality of first dies A, F, K, P extending and arranged along a first direction, and the first direction is along an X-axis direction; the wafer 303 further includes a plurality of second dies C, H, M, R extending and arranged along a first direction, the plurality of second dies being arranged at intervals from the plurality of first dies along a second direction, the second direction being along a Y-axis direction, and the first direction and the second direction being perpendicular to each other; the wafer also includes a plurality of third dies, such as die B, G, L, Q, die D, I, N, S or die E, J, O, T, arranged to extend in a first direction, the plurality of third dies being arranged adjacent to or spaced apart from the plurality of first dies and the plurality of third dies in a second direction. The detection device further comprises: a first beam splitter 304, wherein the first beam splitter 304 splits the light emitted by the light source 301 into a first light beam and a second light beam. The detection device further includes a second beam splitter 308, and the second beam splitter 308 reflects a portion of the light emitted by the light source 301 into a third light beam.
The detection device further comprises: a first polarizer 302, the first polarizer 302 being configured to reflect the first light beam, the first light beam illuminating the first die A, F, K, P on the wafer 303; a second polarizer 306, the second polarizer 306 being configured to reflect the second light beam, the second light beam illuminating the second die C, H, M, R on the wafer 303; a third polarizer 310, the third polarizer 310 being configured to reflect the third light beam, the third light beam illuminating the third die on the wafer 303.
In order to enable the third beam to accurately illuminate the third die, the wafer defect inspection apparatus further includes a mirror or polarizer 309 to reflect the third beam exiting the beam splitter 308 to a third polarizer 310.
An image sensing device (not shown) for acquiring images of the first die A, F, K, P, the second die C, H, M, R and the third die; and an actuator 307, wherein the actuator 307 causes the first polarizer 302, the second polarizer 306, and the third polarizer 310 to simultaneously generate relative movements along the first direction with the first die, the second die, and the third die, respectively.
Fig. 8 shows a detection device comprising only two beam splitters, and in fact, more than two beam splitters may be disposed on the outgoing light path of the light source to generate more than three beams, and respectively irradiate more than three columns or more than three rows of dies, so that the speed of wafer detection may be further improved. The second beam splitter 308 may be disposed not only between the light source 301 and the first beam splitter 304, but also on the optical path of the first light beam or on the optical path of the second light beam.
In another specific embodiment, the inspection device includes a plurality of wafers, for example, may include two wafers, each of which includes a plurality of first dies and second dies located in the same row or column, and the first dies and the second dies are located in different rows or columns, respectively. The light emitted from the light source is divided into a plurality of light beams by a plurality of spectroscopes, at least two light beams are distributed for each wafer, and the first crystal grain and the second crystal grain are detected simultaneously for each wafer, so that the detection speed of the wafer can be further improved.
Example III
The present embodiment is a modified embodiment of the wafer defect inspection apparatus of the first embodiment, which employs the same wafer defect inspection apparatus as the first embodiment. In this embodiment, the first die and the second die of the wafer 303 each include a plurality of pixel units, and the first die and the second die are respectively represented by a pixel matrix formed by the plurality of pixel units. As shown in fig. 5, a partial area of the wafer is schematically comprised of four dies A, B, C, D and the four dies A, B, C, D are divided into an array of 2 rows and 2 columns, with the first row having dies A, C and the second row having dies B, D. Each die illustratively includes four pixel units (wafer inspection units, actual number is 10 in order), for example, die a has pixel units a/1, a/2, a/3, a/4, die B has pixel units B/1, B/2, B/3, B/4, and pixel units a/1, a/2, a/3, a/4 correspond to pixel units B/1, B/2, B/3, B/4, respectively, i.e., are pixel units located at the same position in both dies. For example, the die A and the die B are aligned and stacked together at the periphery, and the pixel units A/1, A/2, A/3, A/4 have the same projections in the stacking direction as the pixel units B/1, B/2, B/3, B/4, respectively. The spacing between the pixel cells at the same location in the two dies is set to H, by adjusting the actuator 307 to ensure that the first and second beams actually impinge on the pixel cells at the same location in the 2 dies A, B.
Fig. 6 is a schematic diagram illustrating the principle of improving the optical inspection speed according to the present invention, wherein fig. 6 (a) is a wafer inspection method in the prior art, and fig. 6 (b) is a wafer inspection method according to the present invention. The wafer detection method in the prior art only provides one light beam, only scans one row of crystal grains at a time and provides a defect detection result; the wafer detection method uses a new optical means to change the light source into 2 light source waves with the same wavelength and property, changes the detection mode of the detection device into a mode of 2 rows and the same line, namely provides two light beams, and simultaneously irradiates the wafer with the two light sources which are not interfered with each other to perform the same-direction light path detection, so that the crystal grains of two rows can be scanned at one time and the defect detection result is provided, thereby greatly improving the optical detection speed and the detection throughput. After the detection light passes through the surface of the wafer to finish detection, the reflected light is subjected to signal collection through the original image sensing device to perform detection, so that the modification cost of the wafer detection device is not required to be greatly increased.
Example IV
The embodiment of the invention provides a wafer defect detection method, as shown in fig. 7, which at least comprises the following steps:
S1, providing a light source, a wafer, a spectroscope, a polarizer and an image sensing device;
in this step, a light source is provided; providing a wafer, wherein the wafer comprises a plurality of first crystal grains extending along a first direction, and a plurality of second crystal grains extending along the first direction, and the second crystal grains are adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other; providing a spectroscope, wherein the spectroscope divides light rays emitted by the light source into a first light beam and a second light beam; providing a first polarizer for reflecting the first light beam, the first light beam illuminating the first die on the wafer; providing a second polarizer for reflecting the second light beam, the second light beam illuminating the second die on the wafer; providing an image sensing device for acquiring images of the first die and the second die;
s2, providing a transmission device;
in this step, an actuator is provided which causes the first and second polarizers to simultaneously produce relative movement in the first direction with the first and second dies, respectively. The relative movement may be generated by moving the polarizer with the wafer stationary by the actuator, by moving the wafer with the actuator stationary, or by both.
The light source comprises a coaxial light source or adopts a dark field illumination mode, and the light source comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
The image sensing device comprises an image sensor for capturing images of the first die and the second die; the image sensing device further includes a lens for magnifying and focusing the first die and the second die to the image sensor.
The beam splitter includes a planar beam splitter or a non-polarizing beam splitter.
The first crystal grain and the second crystal grain both comprise a plurality of pixel units, and the first crystal grain and the second crystal grain are respectively represented by a pixel matrix formed by the plurality of pixel units; the positions of the first and second polarizers are adjusted so that the first and second light beams respectively illuminate pixel cells at the same positions of the first and second dies.
Comparing the images of the first plurality of dies to obtain the wafer defect, and comparing the images of the second plurality of dies to obtain the wafer defect; comparing the image of the first die with the image of the second die to obtain the wafer defect.
The detection method uses a new optical means to change the light source into 2 light source waves with the same wavelength and property, changes the detection mode of the detection device into a mode of 2 rows of the same row or 2 columns of the same row, adds a transmission device on the polarizer, and ensures the accuracy of the irradiation position of the detection light through the translation of the X direction, thereby greatly improving the optical detection speed and the detection throughput. In addition, besides comparing the left and right 2 grains to find out the wafer defect, the comparison can be increased again up and down, namely, the grains in the previous row are compared with the grains in the next row, so that the detection speed and the detection precision can be further improved.
The above-described embodiments illustrate only the principle of the invention and its efficacy, but are not intended to limit the invention, as various modifications and variations can be made by those skilled in the art without departing from the spirit and scope of the invention, which is defined in the appended claims.
Claims (27)
1. A wafer defect inspection apparatus, the inspection apparatus comprising:
a light source;
a wafer including a plurality of first dies arranged to extend along a first direction, the wafer further including a plurality of second dies arranged to extend along the first direction, the plurality of second dies being adjacent to or spaced apart from the plurality of first dies along a second direction; wherein the first direction and the second direction are perpendicular to each other;
At least one beam splitter comprising a first beam splitter that splits light emitted by the light source into a first beam and a second beam;
a first polarizer for reflecting the first light beam, the first light beam illuminating the first die on the wafer;
a second polarizer for reflecting the second light beam, the second light beam illuminating the second die on the wafer;
an image sensing device for acquiring images of the first die and the second die; and
and the transmission device enables the first polarizer and the second polarizer to simultaneously generate the same-direction relative movement along the first direction with the first crystal grain and the second crystal grain respectively.
2. The inspection apparatus of claim 1, wherein the wafer further comprises a plurality of third dies extending in a first direction, the plurality of third dies being adjacent to or spaced apart from the plurality of first dies and the plurality of second dies in a second direction; the at least one beam splitter further comprises a second beam splitter that reflects or refracts a portion of the light emitted by the light source into a third light beam; the image sensing device is also used for acquiring an image of the third crystal grain;
The detection device further includes: a third polarizer for reflecting the third light beam, the third light beam illuminating the third die on the wafer; the actuator causes the first, second and third polarizers to simultaneously produce relative movement in the first direction with the first, second and third dies, respectively.
3. A wafer defect inspection apparatus, the inspection apparatus comprising:
a light source;
at least one wafer comprising at least a first wafer and a second wafer, the first wafer comprising a plurality of first dies arranged along a first direction, the first wafer further comprising a plurality of second dies arranged along the first direction, the plurality of second dies arranged along a second direction adjacent to or spaced apart from the plurality of first dies; wherein the first direction and the second direction are perpendicular to each other;
the second wafer comprises a plurality of third crystal grains which are arranged along the first direction in an extending way, and a plurality of fourth crystal grains which are arranged along the first direction in an extending way, wherein the fourth crystal grains are adjacent to or are arranged at intervals in the second direction;
At least one beam splitter that splits light emitted by the light source into at least a first beam, a second beam, a third beam, and a fourth beam;
at least one polarizer including first, second, third and fourth polarizers for reflecting the first, second, third and fourth light beams, respectively, the first, second, third and fourth light beams illuminating the first, second, third and fourth dies, respectively;
an image sensing device for acquiring images of the first, second, third, and fourth dies; and
and the transmission device enables the first polarizer, the second polarizer, the third polarizer and the fourth polarizer to simultaneously generate the same-direction relative movement along the first direction with the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain respectively.
4. A detection device according to any one of claims 1-3, wherein the light source comprises an on-axis light source or is a dark field illumination.
5. A detection device according to any one of claims 1-3, wherein the light source comprises a xenon lamp, a halogen lamp, an LED or a laser light source.
6. A detection apparatus according to any one of claims 1 to 3, wherein the image sensing apparatus comprises an image sensor for capturing an image of the die.
7. The inspection apparatus of claim 6, wherein said image sensing apparatus further comprises a lens for magnifying and focusing said die onto said image sensor.
8. A test device according to any one of claims 1 to 3, wherein the beam splitter comprises a planar beam splitter.
9. A test device according to any one of claims 1 to 3, wherein the beam splitter comprises a non-polarizing beam splitter.
10. The inspection apparatus of claim 1, wherein the first die and the second die each comprise a plurality of pixel cells, the first die and the second die being represented by a pixel matrix of the plurality of pixel cells, respectively, the first light beam and the second light beam respectively illuminating the pixel cells of the same location of the first die and the second die.
11. The inspection apparatus of claim 2, wherein the first, second and third dies each comprise a plurality of pixel cells, the first, second and third dies each being represented by a pixel matrix of the plurality of pixel cells, the first, second and third light beams each illuminating the pixel cells of the first, second and third dies at the same location.
12. The inspection apparatus according to claim 3, wherein each of the first, second, third and fourth dies includes a plurality of pixel units, the first, second, third and fourth dies being represented by a pixel matrix of the plurality of pixel units, respectively, the first and second light beams respectively irradiating the pixel units of the same position of the first and second dies, and the third and fourth light beams respectively irradiating the pixel units of the same position of the third and fourth dies.
13. A method for detecting wafer defects, the method comprising at least the steps of:
Providing a light source;
providing a wafer, wherein the wafer comprises a plurality of first crystal grains extending along a first direction, and a plurality of second crystal grains extending along the first direction, and the second crystal grains are adjacent to or spaced from the first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
providing at least one beam splitter, the at least one beam splitter comprising a first beam splitter that splits light emitted by the light source into a first beam and a second beam;
providing a first polarizer for reflecting the first light beam, the first light beam illuminating the first die on the wafer;
providing a second polarizer for reflecting the second light beam, the second light beam illuminating the second die on the wafer;
providing an image sensing device for acquiring images of the first die and the second die; and
an actuator is provided that causes the first and second polarizers to simultaneously produce a co-directional relative movement along the first direction with the first and second dies, respectively.
14. The inspection method of claim 13, wherein the wafer further comprises a plurality of third dies extending in a first direction, the plurality of third dies being adjacent to or spaced apart from the plurality of first dies and the plurality of second dies in a second direction; the at least one beam splitter further comprises a second beam splitter that reflects or refracts a portion of the light emitted by the light source into a third light beam; the image sensing device is also used for acquiring an image of the third crystal grain;
the detection device further includes: a third polarizer for reflecting the third light beam, the third light beam illuminating the third die on the wafer; the actuator causes the first, second and third polarizers to simultaneously produce relative movement in the first direction with the first, second and third dies, respectively.
15. A method for detecting wafer defects, the method comprising at least the steps of:
providing a light source;
providing at least one wafer, wherein the at least one wafer at least comprises a first wafer and a second wafer, the first wafer comprises a plurality of first crystal grains which are arranged along a first direction in an extending way, and the first wafer also comprises a plurality of second crystal grains which are arranged along the first direction in an extending way, and the plurality of second crystal grains are adjacent to or are arranged at intervals with the plurality of first crystal grains along a second direction; wherein the first direction and the second direction are perpendicular to each other;
The second wafer comprises a plurality of third crystal grains which are arranged along the first direction in an extending way, and a plurality of fourth crystal grains which are arranged along the first direction in an extending way, wherein the fourth crystal grains are adjacent to or are arranged at intervals in the second direction;
providing at least one beam splitter that splits light emitted by the light source into at least a first beam, a second beam, a third beam, and a fourth beam;
providing at least one polarizer comprising a first polarizer, a second polarizer, a third polarizer and a fourth polarizer for reflecting the first, second, third and fourth light beams, respectively, the first, second, third and fourth light beams illuminating the first, second, third and fourth dies, respectively;
providing an image sensing device for acquiring images of the first, second, third and fourth dies; and
and providing a transmission device, wherein the transmission device enables the first polarizer, the second polarizer, the third polarizer and the fourth polarizer to simultaneously generate the same-direction relative movement along the first direction with the first crystal grain, the second crystal grain, the third crystal grain and the fourth crystal grain respectively.
16. The method of any one of claims 13-15, wherein the light source comprises an on-axis light source or is a dark field illumination.
17. The method of any one of claims 13-15, wherein the light source comprises a xenon lamp, a halogen lamp, an LED, or a laser light source.
18. The method of any one of claims 13-15, wherein the image sensing device comprises an image sensor for capturing an image of the die.
19. The method of claim 16, wherein the image sensing device further comprises a lens for magnifying and focusing the die to the image sensor.
20. The method of any one of claims 13-15, wherein the beam splitter comprises a planar beam splitter.
21. The method of any one of claims 13-15, wherein the beam splitter comprises a non-polarizing beam splitter.
22. The inspection method of claim 13, wherein the first die and the second die each comprise a plurality of pixel cells, the first die and the second die being represented by a pixel matrix of the plurality of pixel cells, respectively, the first beam and the second beam illuminating the pixel cells at the same location of the first die and the second die, respectively.
23. The inspection method of claim 14, wherein the first, second and third dies each comprise a plurality of pixel cells, the first, second and third dies each being represented by a pixel matrix of the plurality of pixel cells, the first, second and third light beams each illuminating the pixel cells of the first, second and third dies at the same location.
24. The inspection method of claim 15, wherein the first, second, third and fourth dies each comprise a plurality of pixel cells, the first, second, third and fourth dies each being represented by a pixel matrix of the plurality of pixel cells, the first and second light beams each illuminating the pixel cells of the same location of the first and second dies, and the third and fourth light beams each illuminating the pixel cells of the same location of the third and fourth dies.
25. The inspection method of any of claims 13-15, wherein the images of the first plurality of dies are compared to obtain the wafer defect and the images of the second plurality of dies are compared to obtain the wafer defect.
26. The inspection method of any of claims 13-15, wherein the image of the first die is compared to the image of the second die to obtain the wafer defect.
27. The inspection method of claim 15, wherein the images of the plurality of third dies are compared to obtain the wafer defect, and wherein the images of the third dies are compared to the images of the fourth dies to obtain the wafer defect.
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| TW519710B (en) * | 2001-10-18 | 2003-02-01 | United Microelectronics Corp | Optical wafer inspection apparatus |
| JP5046054B2 (en) * | 2009-04-02 | 2012-10-10 | レーザーテック株式会社 | Defect inspection apparatus, defect inspection method, optical scanning apparatus, and semiconductor device manufacturing method |
| TW201124715A (en) * | 2010-01-13 | 2011-07-16 | Youngtek Electronics Corp | Detection device and detection method for detecting the appearance of LED |
| JP5519313B2 (en) * | 2010-02-10 | 2014-06-11 | アプライド マテリアルズ サウス イースト アジア プライベート リミティド | Method and system for fast on-line electro-optic detection of wafer defects |
| CN103247548B (en) * | 2012-02-09 | 2016-01-20 | 无锡华润上华科技有限公司 | A kind of wafer defect checkout gear and method |
| CN203203942U (en) * | 2013-04-19 | 2013-09-18 | 精映科技股份有限公司 | Wafer defect detection machine table |
| CN103646889A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | A method for detecting wafer defects |
| IT201600132813A1 (en) * | 2016-12-30 | 2018-06-30 | Istituto Naz Fisica Nucleare | METHOD AND APPARATUS FOR DETECTING SUBDIFFRACTIVE DIMENSIONS PARTICLES |
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