CN102723334B - Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display - Google Patents
Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display Download PDFInfo
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- CN102723334B CN102723334B CN201210186458.1A CN201210186458A CN102723334B CN 102723334 B CN102723334 B CN 102723334B CN 201210186458 A CN201210186458 A CN 201210186458A CN 102723334 B CN102723334 B CN 102723334B
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- contact hole
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Abstract
The invention provides a metal oxide thin-film transistor substrate, a manufacture method thereof and a liquid crystal display. The thin-film transistor substrate is located on a glass substrate and comprises a data line, a grid line, a TFT (thin film transistor) component, a pixel electrode, and a protective layer. The data line comprises a first data line, a second data line and a signal bridging line. The TFT component comprises an insulation layer, a source formed by the signal bridging line, a drain connected with the pixel electrode, a grid electrode connected with the grid line, and a semiconductor layer located between the source and the drain. The protective layer is located on the semiconductor layer. By a TFT structure capable of reducing photomask, process is reduced, and manufacture cost is lowered. IGZO (indium gallium zinc oxide) or ZnO is used as the semiconductor layer, grid metal is used as source signals, ITO (indium tin oxide) or low resistance transparent material reaching metal level is used to bridge to form a source signal line (source), the pixel electrode (containing the drain), only four photomask processes are needed to be manufactured to finish the TFT component, and cost saving is facilitated.
Description
Technical field
The present invention relates to a kind of TFT lcd technology, particularly relate to a kind of metal-oxide film crystal substrate and manufacture method thereof and liquid crystal display.
Background technology
Liquid crystal display is flat-panel monitor conventional at present, and wherein, film crystal substrate liquid crystal display (ThinFilm Transistor Liquid Crystal Display, TFT-LCD) is the main product of liquid crystal display.The most important parts of liquid crystal display, which is provided with TFT substrate and CF is basic, be added with liquid crystal (LC), therefore be called liquid crystal display at TFT fundamental sum CF substrate.
Fig. 1 is the structural representation of existing metal-oxide film crystal substrate, and it comprises: grid 10, the first insulating barrier 20 be positioned on grid 10, semiconductor layer 30, the source electrode 40 being positioned at semiconductor layer 30 both sides and drain electrode 50, the etching stopping layer 60 be positioned on semiconductor layer 30, with the pixel electrode 80 that is connected of drain electrode and the second insulating barrier 70.
The processing procedure of existing metal-oxide film crystal substrate is similar with existing amorphous silicon processing procedure, except traditional BCE structure, consider characteristic of semiconductor and have ESL(Etch Stop Layer: etching stopping layer) and Co-Planar framework, required processing procedure needs five roads or six road light shields.Because of the unglazed leakage effect of IGZO, therefore also there is top grid TFT structure.
Summary of the invention
The invention provides a kind of TFT structure reducing optical cover process, processing procedure can be simplified and reduce the metal-oxide film crystal substrate and manufacture method thereof and liquid crystal display that manufacture.
The invention provides a kind of metal-oxide film crystal substrate, be positioned on glass substrate, it is characterized in that, comprising: data wire, comprising: the first data wire, the second data wire and connect the signal bridging line of the first data wire and the second data wire; Grid line, intersects with data wire; TFT element, comprising: the insulating barrier on grid line, the source electrode formed by signal bridging line, drain electrode and the grid be connected with grid line and at source electrode and the semiconductor layer between draining; Pixel electrode, is connected with drain electrode; Protective layer, is positioned on semiconductor layer; Wherein, described semiconductor layer is positioned on insulating barrier.
The present invention provides again a kind of manufacture method of metal-oxide film crystal substrate, comprises the steps:
10) form a metal level on the glass substrate, then form the first data wire, grid line, the second data wire, the grid that is connected with grid line on the metal layer;
20) on the basis forming above-mentioned pattern, form an insulating barrier, then form the second contact hole and the 3rd contact hole on which insulating layer;
30) on the basis forming above-mentioned pattern, use deposition layer of metal line, then form signal bridging line, source electrode, pixel electrode, the 6th contact hole, drain electrode, described signal bridging line connects the first data wire and the second data wire, and described pixel electrode connects drain electrode;
40) in the 6th contact hole, form respectively semiconductor layer and protective layer, the two ends of described semiconductor layer respectively with source electrode and drain contact; Described protective layer is positioned on semiconductor layer.
The present invention provides again a kind of liquid crystal display, comprises metal-oxide film crystal substrate substrate and CF substrate and the liquid crystal between metal-oxide film crystal substrate substrate and CF substrate.
The manufacture method of this metal-oxide film crystal substrate, substitutes a-Si; ITO conductor characteristics, is electrically connected gate metal, proposes a kind of TFT structure reducing optical cover process, can simplify processing procedure and reduce manufacturing cost.Using IGZO or ZnO as semiconductor layer, utilize gate metal as source electrode signal, recycling ITO or the low resistance transparent material reaching metal level carry out bridge joint and form source signal line (source electrode), pixel electrode (containing drain electrode), namely Zhi Xu tetra-road optical cover process completes TFT element, is conducive to cost-saving.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing metal-oxide film crystal substrate;
Fig. 2 A is the structural representation of metal-oxide film crystal substrate of the present invention;
Fig. 2 B is that metal-oxide film crystal substrate shown in Fig. 2 A is at the cutaway view in A-A direction;
Fig. 3 A is the schematic diagram of the step one of metal-oxide film crystal substrate manufacture method of the present invention;
Fig. 3 B is that step one shown in Fig. 3 A is at the cutaway view in A-A direction;
Fig. 4 A is the schematic diagram of the step 2 of metal-oxide film crystal substrate manufacture method of the present invention;
Fig. 4 B is that step one shown in Fig. 4 A is at the cutaway view in A-A direction;
Fig. 5 A is the schematic diagram of the step 3 of metal-oxide film crystal substrate manufacture method of the present invention;
Fig. 5 B is that step one shown in Fig. 5 A is at the cutaway view in A-A direction;
Fig. 6 A is the schematic diagram of the step 4 of metal-oxide film crystal substrate manufacture method of the present invention;
Fig. 6 B is that step one shown in Fig. 6 A is at the cutaway view in A-A direction;
Symbol description in figure:
1-substrate of glass 10-terminal 20-data wire 21-first data wire
22-second data wire 30-grid line 31-grid 40-insulating barrier
41-first contact hole 42-second contact hole 43-the 3rd contact hole
44-the 4th contact hole 56-the 5th contact hole
50-metal wire 55-signal bridging line 51-conductive metal wire
52-source electrode 53-drain electrode 54-pixel electrode
60-semiconductor layer 70-protective layer
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
The present invention discloses a kind of metal-oxide film crystal substrate; as shown in Figure 2 A and 2 B, this metal-oxide film crystal substrate comprises: glass substrate 1, terminal 10, data wire 20, TFT element, insulating barrier 40, the grid line 30, pixel electrode 54, semiconductor layer 60 and the protective layer 70 that intersect with data wire 20.
Described terminal 10 is provided with conductive metal layer 51.
Shown data wire 20 comprises the first data wire 21, second data wire 22 and connects the signal bridging line 55 of the first data wire 21 and the second data wire 22.
Shown in TFT element comprise: be positioned at the insulating barrier 40 on grid line 30, the grid 31 be connected with grid line 30, the source electrode 52 formed by signal bridging line 55, the drain electrode 53 be connected with pixel electrode 54 and connect source electrode 52 and drain 53 semiconductor layer 60, and described semiconductor layer 60 is positioned on insulating barrier 40.
Described protective layer 70 is positioned on described semiconductor layer 60.
In the 5th contact hole 56 of described semiconductor layer 60 between source electrode 52 and drain electrode 53, and semiconductor layer 60 both sides contact with drain electrode 53 respectively at source electrode 52.
Described terminal 10, first data wire 21, second data wire 22, grid line 30 and grid 31 are made up of same operation, and make by Al or Cu alloy material.
Described conductive metal layer 51, signal bridging line 55, source electrode 52, pixel electrode 54 and drain electrode 53 are also made by same operation, and make by transparent conductive membrane material, as ITO or the low resistance transparent material with metal level.
Described semiconductor layer 60 material therefor is ZnO or IGZO, and described protective layer 70 is etching stopping layer (EST:Etch Stop), and described protective layer 70 is by SiO
2material is made.
The present invention also discloses a kind of liquid crystal display, and it comprises metal-oxide film crystal substrate, CF substrate and the liquid crystal between metal-oxide film crystal substrate and CF substrate.
Metal-oxide film crystal substrate of the present invention, traditional a-Si is substituted by the metal level made by transparent conductive membrane material, using IGZO or ZnO as semiconductor layer, utilize gate metal as source electrode signal, recycling ITO or the low resistance transparent material reaching metal level carry out bridge joint and form source signal line (source electrode), pixel electrode (containing drain electrode), is conducive to cost-saving.
The manufacture method of this metal-oxide film crystal substrate is as follows:
The first step: first prepare a glass substrate 1 cleaned, then on glass substrate 1, the first metal layer is precipitated at Al or Cu alloy material, then by obtaining terminal 10 as shown in Figure 3A after exposure imaging, first data wire 21, grid 30, second data wire 22, the grid 31 be connected with grid line 30, and in Fig. 3 A with horizontal line in order to define terminal and grid, ordinate is in order to define source electrode, Fig. 3 B is the cutaway view of Fig. 3 A in A-A direction, from a left side to by the right side, Fig. 3 B is sequentially terminal 10, first data wire 21, grid 30, second data wire 22, the grid 31 be connected with grid line 30.
Second step: with SiO2 or SiNx deposition of material one insulating barrier 40 on the basis forming above-mentioned pattern, this insulating barrier 40 is as the gate insulator of film crystal substrate, and by obtaining the first contact hole 41 as shown in Figure 4 A and 4 B shown in FIG. after exposure imaging, second contact hole 42, 3rd contact hole 43, 4th contact hole 44 and the 5th contact hole 45, because the hatching line of Fig. 4 B in A-A direction is on grid 31, therefore Fig. 4 B can not show the 4th contact hole 44 and the 5th contact hole 45, described first contact hole 41 is positioned on terminal 10, described second contact hole 42 is positioned on the first data wire 21, described 3rd contact hole 43 is positioned on the second data wire 22.
3rd step: with deposition layer of metal line 50 on the basis forming above-mentioned pattern, the material of this metal wire 50 is nesa coating, as ITO or the low resistance transparent with metal level, as Fig. 5 A and Fig. 5 B, then exposure imaging forms conductive metal wire 51, signal bridging line 55, source electrode 52, pixel electrode 54, the 6th contact hole 56, drain electrode 53, described conductive metal wire 51 is formed in the first contact hole 41, and is positioned on terminal 10; Described signal bridging line 55 is formed in the second contact hole 42 and the 3rd contact hole 43, this signal bridging line 55 connects the first data wire 21 and the second data wire 22, described source electrode 52 is integrally formed with described signal bridging line 55, first data wire 21, second data wire 22 and described signal bridging line 55 connect to form data wire 20, described pixel electrode 54 is connected with drain electrode 53, and source electrode 52 is positioned at the both sides of grid 31 with drain electrode 53, described 6th contact hole 56 is between source electrode 52 and drain electrode 53.
4th step: form semiconductor layer 60 and protective layer (ES) 70 respectively in the 6th contact hole 56, the two ends of described semiconductor layer 60 contact with drain electrode 53 with source electrode 52 respectively; Described protective layer 70 is positioned on semiconductor layer 60, and described semiconductor layer 60 material therefor is ZnO or IGZO, and described protective layer all material is SiO2.
The manufacture method of this metal-oxide film crystal substrate, substitutes a-Si; ITO conductor characteristics, is electrically connected gate metal, proposes a kind of TFT structure reducing optical cover process, can simplify processing procedure and reduce manufacturing cost.Using IGZO or ZnO as semiconductor layer, utilize gate metal as source electrode signal, recycling ITO or the low resistance transparent material reaching metal level carry out bridge joint and form source signal line (source electrode), pixel electrode (containing drain electrode), namely Zhi Xu tetra-road optical cover process completes TFT element, is conducive to cost-saving.
Claims (1)
1. a manufacture method for metal-oxide film crystal substrate, is characterized in that, comprises the steps:
10) form a metal level on the glass substrate, then form terminal, the first data wire, grid line, the second data wire, the grid that is connected with grid line on the metal layer;
20) on the basis forming above-mentioned pattern, an insulating barrier is formed, then the first contact hole, the second contact hole, the 3rd contact hole, the 4th contact hole and the 5th contact hole is formed on which insulating layer, described first contact hole is positioned on terminal, described second contact hole is positioned on the first data wire, and described 3rd contact hole is positioned on the second data wire;
30) on the basis forming above-mentioned pattern, deposit layer of metal line, then form conductive metal wire, signal bridging line, source electrode, pixel electrode, the 6th contact hole, drain electrode, described conductive metal wire is formed in the first contact hole, and is positioned on terminal; Described signal bridging line connects the second contact hole of the first data wire and the 3rd contact hole of the second data wire, and described pixel electrode connects drain electrode, and described 6th contact hole is between source electrode and drain electrode;
40) in the 6th contact hole, form semiconductor layer and protective layer respectively, the two ends of described semiconductor layer respectively with source electrode and drain contact; Described protective layer is positioned on semiconductor layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210186458.1A CN102723334B (en) | 2012-06-07 | 2012-06-07 | Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210186458.1A CN102723334B (en) | 2012-06-07 | 2012-06-07 | Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display |
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| CN102723334A CN102723334A (en) | 2012-10-10 |
| CN102723334B true CN102723334B (en) | 2015-04-08 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103076703B (en) * | 2012-12-28 | 2015-11-25 | 南京中电熊猫液晶显示科技有限公司 | A kind of display panels and manufacture method thereof |
| CN105679763A (en) * | 2016-01-05 | 2016-06-15 | 深圳市华星光电技术有限公司 | Array substrate and manufacturing method thereof and display panel |
| KR20180016330A (en) * | 2016-07-08 | 2018-02-14 | 보에 테크놀로지 그룹 컴퍼니 리미티드 | Thin film transistor, gate drive on array and display apparatus having the same, and fabricating method thereof |
| CN107978615A (en) * | 2017-11-24 | 2018-05-01 | 成都捷翼电子科技有限公司 | A kind of manufacture method of flexible organic film transistor base |
| CN108922966A (en) * | 2018-06-19 | 2018-11-30 | 信利半导体有限公司 | A kind of Organic Thin Film Transistors and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101060124A (en) * | 2006-04-21 | 2007-10-24 | 京东方科技集团股份有限公司 | A TFT LCD array base plate and manufacture method |
| CN101609236A (en) * | 2009-07-15 | 2009-12-23 | 上海广电光电子有限公司 | Method for manufacturing thin film transistor array substrate |
| CN102468306A (en) * | 2010-10-29 | 2012-05-23 | 京东方科技集团股份有限公司 | Array base plate, liquid crystal display, and manufacturing method for array substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001051303A (en) * | 1999-08-05 | 2001-02-23 | Fujitsu Ltd | Liquid crystal display device and its production |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101060124A (en) * | 2006-04-21 | 2007-10-24 | 京东方科技集团股份有限公司 | A TFT LCD array base plate and manufacture method |
| CN101609236A (en) * | 2009-07-15 | 2009-12-23 | 上海广电光电子有限公司 | Method for manufacturing thin film transistor array substrate |
| CN102468306A (en) * | 2010-10-29 | 2012-05-23 | 京东方科技集团股份有限公司 | Array base plate, liquid crystal display, and manufacturing method for array substrate |
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