CN102723334A - Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display - Google Patents
Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display Download PDFInfo
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- CN102723334A CN102723334A CN2012101864581A CN201210186458A CN102723334A CN 102723334 A CN102723334 A CN 102723334A CN 2012101864581 A CN2012101864581 A CN 2012101864581A CN 201210186458 A CN201210186458 A CN 201210186458A CN 102723334 A CN102723334 A CN 102723334A
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Abstract
The invention provides a metal oxide thin-film transistor substrate, a manufacture method thereof and a liquid crystal display. The thin-film transistor substrate is located on a glass substrate and comprises a data line, a grid line, a TFT (thin film transistor) component, a pixel electrode, and a protective layer. The data line comprises a first data line, a second data line and a signal bridging line. The TFT component comprises an insulation layer, a source formed by the signal bridging line, a drain connected with the pixel electrode, a grid electrode connected with the grid line, and a semiconductor layer located between the source and the drain. The protective layer is located on the semiconductor layer. By a TFT structure capable of reducing photomask, process is reduced, and manufacture cost is lowered. IGZO (indium gallium zinc oxide) or ZnO is used as the semiconductor layer, grid metal is used as source signals, ITO (indium tin oxide) or low resistance transparent material reaching metal level is used to bridge to form a source signal line (source), the pixel electrode (containing the drain), only four photomask processes are needed to be manufactured to finish the TFT component, and cost saving is facilitated.
Description
Technical field
The present invention relates to a kind of TFT lcd technology, relate in particular to a kind of metal-oxide film crystal substrate and manufacturing approach and LCD.
Background technology
LCD is a flat-panel monitor commonly used at present, and wherein, (Thin Film Transistor Liquid Crystal Display TFT-LCD) is the main product of LCD to film crystal substrate LCD.The most important parts of LCD, it is basic to which is provided with TFT substrate and CF, is added with liquid crystal (LC) at TFT fundamental sum CF substrate, so be called LCD.
Fig. 1 is the structural representation of existing metal-oxide film crystal substrate, and it comprises: grid 10, be positioned at first insulating barrier 20, semiconductor layer 30 on the grid 10, the source electrode 40 that is positioned at semiconductor layer 30 both sides with drain 50, be positioned at etching stopping layer 60 on the semiconductor layer 30, with the pixel electrode 80 and second insulating barrier 70 that drain and be connected.
The processing procedure of existing metal-oxide film crystal substrate is similar with existing amorphous silicon processing procedure; Except that traditional BCE structure; Considering characteristic of semiconductor has ESL (Etch Stop Layer: etching stopping layer) with the Co-Planar framework, required processing procedure needs five roads or six road light shields.Because of the unglazed electric leakage effect of IGZO, therefore top grid TFT structure is also arranged.
Summary of the invention
The present invention provides a kind of TFT structure that reduces the light shield processing procedure, can simplify processing procedure and reduce metal-oxide film crystal substrate and manufacturing approach and the LCD that manufactures.
The present invention provides a kind of metal-oxide film crystal substrate, is positioned on the glass substrate, it is characterized in that, comprising: data wire comprises: first data wire, second data wire and connect first data wire and the signal bridging line of second data wire; Grid line intersects with data wire; The TFT element comprises: at the insulating barrier on the grid line, the source electrode, drain electrode and the grid that is connected with grid line that are formed by signal bridging line and the semiconductor layer between source electrode and drain electrode; Pixel electrode is connected with drain electrode; Protective layer is positioned on the semiconductor layer; Wherein, said semiconductor layer is positioned on the insulating barrier.
The present invention provides a kind of manufacturing approach of metal-oxide film crystal substrate again, comprises the steps:
10) on glass substrate, form a metal level, the grid that then on this metal level, form first data wire, grid line, second data wire, is connected with grid line;
20) on the basis that forms above-mentioned pattern, form an insulating barrier, then on this insulating barrier, form second contact hole and the 3rd contact hole;
30) on the basis that forms above-mentioned pattern, use deposition layer of metal line, then form signal bridging line, source electrode, pixel electrode, the 6th contact hole, drain electrode, said signal bridging line connects first data wire and second data wire, and said pixel electrode connects drain electrode;
40) in the 6th contact hole, form semiconductor layer and protective layer respectively, the two ends of said semiconductor layer contact with drain electrode with source electrode respectively; Said protective layer is positioned on the semiconductor layer.
The present invention provides a kind of LCD again, comprises metal-oxide film crystal substrate substrate and CF substrate and the liquid crystal between metal-oxide film crystal substrate substrate and CF substrate.
The manufacturing approach of this metal sull crystal substrate substitutes a-Si; The ITO conductor characteristics electrically connects gate metal, proposes a kind of TFT structure that reduces the light shield processing procedure, can simplify processing procedure and reduce manufacturing cost.With IGZO or ZnO as semiconductor layer; Utilize gate metal as the source electrode signal; The low resistance transparent material that utilizes ITO again or reach metal level carries out bridge joint and forms source signal line (source electrode); Pixel electrode (containing drain electrode) only needs four road light shield processing procedures promptly to accomplish the TFT element, helps practicing thrift cost.
Description of drawings
Fig. 1 is the structural representation of existing metal-oxide film crystal substrate;
Fig. 2 A is the structural representation of metal-oxide film crystal substrate of the present invention;
Fig. 2 B is that metal-oxide film crystal substrate shown in Fig. 2 A is at the cutaway view of A-A direction;
Fig. 3 A is the sketch map of metal-oxide film crystal substrate step of manufacturing one of the present invention;
Fig. 3 B is that step 1 shown in Fig. 3 A is at the cutaway view of A-A direction;
Fig. 4 A is the sketch map of metal-oxide film crystal substrate step of manufacturing two of the present invention;
Fig. 4 B is that step 1 shown in Fig. 4 A is at the cutaway view of A-A direction;
Fig. 5 A is the sketch map of metal-oxide film crystal substrate step of manufacturing three of the present invention;
Fig. 5 B is that step 1 shown in Fig. 5 A is at the cutaway view of A-A direction;
Fig. 6 A is the sketch map of metal-oxide film crystal substrate step of manufacturing four of the present invention;
Fig. 6 B is that step 1 shown in Fig. 6 A is at the cutaway view of A-A direction;
Symbol description among the figure:
1-substrate of glass 10-terminal 20-data wire 21-first data wire
The 22-second data wire 30-grid line 31-grid 40-insulating barrier
The 41-first contact hole 42-second contact hole 43-the 3rd contact hole
44-the 4th contact hole 56-the 5th contact hole
50-metal wire 55-signal bridging line 51-conductive metal wire
52-source electrode 53-drain electrode 54-pixel electrode
60-semiconductor layer 70-protective layer
Embodiment
Below in conjunction with accompanying drawing and specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
The present invention discloses a kind of metal-oxide film crystal substrate; Shown in Fig. 2 A and Fig. 2 B, this metal sull crystal substrate comprises: glass substrate 1, terminal 10, data wire 20, TFT element, insulating barrier 40, the grid line 30, pixel electrode 54, semiconductor layer 60 and the protective layer 70 that intersect with data wire 20.
Said terminal 10 is provided with conductive metal layer 51.
Shown in data wire 20 comprise first data wire 21, second data wire 22 and connect first data wire 21 and the signal bridging line 55 of second data wire 22.
Shown in the TFT element comprise: source electrode 52, the drain electrode 53 that is connected with pixel electrode 54 that be positioned at the insulating barrier 40 on the grid line 30, the grid 31 that is connected with grid line 30, forms by signal bridging line 55 and connect source electrode 52 and 53 the semiconductor layer 60 of draining, and said semiconductor layer 60 is positioned on the insulating barrier 40.
Said protective layer 70 is positioned on the said semiconductor layer 60.
Said semiconductor layer 60 is in source electrode 52 and the 5th contact hole 56 between 53 of draining, and semiconductor layer 60 both sides contact with drain electrode 53 respectively at source electrode 52.
Said terminal 10, first data wire 21, second data wire 22, grid line 30 and grid 31 are processed by same operation, and process by Al or Cu alloy material.
Said conductive metal layer 51, signal bridging line 55, source electrode 52, pixel electrode 54 and draining 53 also processed by same operation, and processes by the electrically conducting transparent membrane material, like ITO or low resistance transparent material with metal level.
Said semiconductor layer 60 material therefors are ZnO or IGZO, and said protective layer 70 is etching stopping layer (EST:Etch Stop), and said protective layer 70 is by SiO
2Material is processed.
The present invention also discloses a kind of LCD, and it comprises metal-oxide film crystal substrate, CF substrate and the liquid crystal between metal-oxide film crystal substrate and CF substrate.
Metal-oxide film crystal substrate of the present invention; Metal level through processing with the electrically conducting transparent membrane material substitutes traditional a-Si; As semiconductor layer, utilize gate metal as the source electrode signal with IGZO or ZnO, the low resistance transparent material that utilizes ITO again or reach metal level carries out bridge joint and forms source signal line (source electrode); Pixel electrode (containing drain electrode) helps practicing thrift cost.
The manufacturing approach of this metal sull crystal substrate is following:
The first step: prepare a washed glass substrate 1 earlier; On glass substrate 1, precipitate the first metal layer at Al or Cu alloy material then; Then through obtaining terminal 10, first data wire 21, grid 30, second data wire 22 shown in Fig. 3 A, the grid 31 that is connected with grid line 30 behind the exposure imaging; And among Fig. 3 A with horizontal line in order to definition terminal and grid, ordinate is in order to the definition source electrode, Fig. 3 B is the cutaway view of Fig. 3 A in the A-A direction; To being seen by the right side, is terminal 10, first data wire 21, grid 30, second data wire 22 in regular turn on Fig. 3 B, the grid 31 that is connected with grid line 30 from a left side.
Second step: on the basis that forms above-mentioned pattern, deposit an insulating barrier 40 with SiO2 or SiNx material; This insulating barrier 40 is as the gate insulator of film crystal substrate; And through obtaining first contact hole 41, second contact hole 42, the 3rd contact hole 43, the 4th contact hole 44 and the 5th contact hole 45 shown in Fig. 4 A and Fig. 4 B behind the exposure imaging; Because Fig. 4 B is on hatching line to the grid 31 of A-A direction, so can not show the 4th contact hole 44 and the 5th contact hole 45 on Fig. 4 B, said first contact hole 41 is positioned on the terminal 10; Said second contact hole 42 is positioned on first data wire 21, and said the 3rd contact hole 43 is positioned on second data wire 22.
The 3rd step: on the basis that forms above-mentioned pattern, use deposition layer of metal line 50; The material of this metal wire 50 is a nesa coating; Like ITO or to have the low resistance of metal level transparent, like Fig. 5 A and Fig. 5 B, exposure imaging forms conductive metal wire 51, signal bridging line 55, source electrode 52, pixel electrode 54, the 6th contact hole 56, drain electrode 53 then; Said conductive metal wire 51 is formed in first contact hole 41, and is positioned on the terminal 10; Said signal bridging line 55 is formed in second contact hole 42 and the 3rd contact hole 43; This signal bridging line 55 connects first data wire 21 and second data wire 22; Said source electrode 52 is integrally formed with said signal bridging line 55; First data wire 21, second data wire 22 and said signal bridging line 55 connect to form data wire 20, said pixel electrode 54 and drain electrode 53 and are connected, and source electrode 52 and drain electrode 53 be positioned at the both sides of grid 31, and said the 6th contact hole 56 is at source electrode 52 and drain between 53.
The 4th step: in the 6th contact hole 56, form semiconductor layer 60 and protective layer (ES) 70 respectively, the two ends of said semiconductor layer 60 contact with drain electrode 53 with source electrode 52 respectively; Said protective layer 70 is positioned on the semiconductor layer 60, and said semiconductor layer 60 material therefors are ZnO or IGZO, and said protective layer all material is SiO2.
The manufacturing approach of this metal sull crystal substrate substitutes a-Si; The ITO conductor characteristics electrically connects gate metal, proposes a kind of TFT structure that reduces the light shield processing procedure, can simplify processing procedure and reduce manufacturing cost.With IGZO or ZnO as semiconductor layer; Utilize gate metal as the source electrode signal; The low resistance transparent material that utilizes ITO again or reach metal level carries out bridge joint and forms source signal line (source electrode); Pixel electrode (containing drain electrode) only needs four road light shield processing procedures promptly to accomplish the TFT element, helps practicing thrift cost.
Claims (11)
1. a metal-oxide film crystal substrate is positioned on the glass substrate, it is characterized in that, comprising:
Data wire comprises: first data wire, second data wire and connect first data wire and the signal bridging line of second data wire;
Grid line intersects with data wire;
The TFT element comprises: at the insulating barrier on the grid line, the source electrode, drain electrode and the grid that is connected with grid line that are formed by signal bridging line and the semiconductor layer between source electrode and drain electrode;
Pixel electrode is connected with drain electrode;
Protective layer is positioned on the semiconductor layer; Wherein,
Said semiconductor layer is positioned on the insulating barrier.
2. metal-oxide film crystal substrate as claimed in claim 1 is characterized in that, said first data wire, grid line, second data wire and grid all are positioned on the glass substrate.
3. metal-oxide film crystal substrate as claimed in claim 1 is characterized in that, said signal bridging line, source electrode, grid and pixel electrode are processed by the electrically conducting transparent membrane material.
4. metal-oxide film crystal substrate as claimed in claim 1 is characterized in that, the semiconductor layer material therefor is ZnO or IGZO.
5. metal-oxide film crystal substrate as claimed in claim 1 is characterized in that, said protective layer is an etch stop layer, and said protective layer is by SiO
2Material is processed.
6. the manufacturing approach of metal-oxide film crystal substrate as claimed in claim 7 as claimed in claim 1 is characterized in that: also comprise the terminal that is positioned on the glass substrate, said terminal is provided with metal carbonyl conducting layer.
7. a LCD is characterized in that: comprise like claim 1-6 described metal-oxide film crystal substrate substrate and CF substrate and the liquid crystal between metal-oxide film crystal substrate substrate and CF substrate.
8. the manufacturing approach of a metal-oxide film crystal substrate is characterized in that, comprises the steps:
10) on glass substrate, form a metal level, the grid that then on this metal level, form first data wire, grid line, second data wire, is connected with grid line;
20) on the basis that forms above-mentioned pattern, form an insulating barrier, then on this insulating barrier, form second contact hole and the 3rd contact hole;
30) on the basis that forms above-mentioned pattern, use deposition layer of metal line, then form signal bridging line, source electrode, pixel electrode, the 6th contact hole, drain electrode, said signal bridging line connects first data wire and second data wire, and said pixel electrode connects drain electrode;
40) in the 6th contact hole, form semiconductor layer and protective layer respectively, the two ends of said semiconductor layer contact with drain electrode with source electrode respectively; Said protective layer is positioned on the semiconductor layer.
9. the manufacturing approach of metal-oxide film crystal substrate as claimed in claim 8 is characterized in that: said second contact hole is positioned on first data wire, and said the 3rd contact hole is positioned on second data wire.
10. like the manufacturing approach of claim 8 or 9 described metal-oxide film crystal substrates, it is characterized in that: said signal bridging line connects second contact hole and the 3rd contact hole.
11. the manufacturing approach of metal-oxide film crystal substrate as claimed in claim 8; It is characterized in that: in said step 10); On glass substrate, form terminal, in step 20) in, formation is positioned at first contact hole on the terminal; In said step 30) in, in first contact hole, form metal conducting layer.
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| CN201210186458.1A CN102723334B (en) | 2012-06-07 | 2012-06-07 | Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display |
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| CN201210186458.1A CN102723334B (en) | 2012-06-07 | 2012-06-07 | Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display |
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| CN102723334A true CN102723334A (en) | 2012-10-10 |
| CN102723334B CN102723334B (en) | 2015-04-08 |
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| CN103076703A (en) * | 2012-12-28 | 2013-05-01 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel and manufacturing method thereof |
| CN105679763A (en) * | 2016-01-05 | 2016-06-15 | 深圳市华星光电技术有限公司 | Array substrate and manufacturing method thereof and display panel |
| WO2018006412A1 (en) * | 2016-07-08 | 2018-01-11 | Boe Technology Group Co., Ltd. | Thin film transistor, gate drive on array and display apparatus having the same, and fabricating method thereof |
| CN107978615A (en) * | 2017-11-24 | 2018-05-01 | 成都捷翼电子科技有限公司 | A kind of manufacture method of flexible organic film transistor base |
| CN108922966A (en) * | 2018-06-19 | 2018-11-30 | 信利半导体有限公司 | A kind of Organic Thin Film Transistors and preparation method thereof |
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| CN103076703A (en) * | 2012-12-28 | 2013-05-01 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel and manufacturing method thereof |
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| US10032917B1 (en) | 2016-07-08 | 2018-07-24 | Boe Technology Group Co., Ltd. | Thin film transistor, gate drive on array and display apparatus having the same, and fabricating method thereof |
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| CN107978615A (en) * | 2017-11-24 | 2018-05-01 | 成都捷翼电子科技有限公司 | A kind of manufacture method of flexible organic film transistor base |
| CN108922966A (en) * | 2018-06-19 | 2018-11-30 | 信利半导体有限公司 | A kind of Organic Thin Film Transistors and preparation method thereof |
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| CN102723334B (en) | 2015-04-08 |
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