CN107978615A - A kind of manufacture method of flexible organic film transistor base - Google Patents

A kind of manufacture method of flexible organic film transistor base Download PDF

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Publication number
CN107978615A
CN107978615A CN201711190477.0A CN201711190477A CN107978615A CN 107978615 A CN107978615 A CN 107978615A CN 201711190477 A CN201711190477 A CN 201711190477A CN 107978615 A CN107978615 A CN 107978615A
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China
Prior art keywords
patterning
layer
photoetching process
wet etching
mask plate
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Pending
Application number
CN201711190477.0A
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Chinese (zh)
Inventor
韦新颖
薛晓阳
杜勇
黄皓坚
谢芯瑀
高启仁
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Chengdu Jieyi Electronic Technology Co Ltd
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Chengdu Jieyi Electronic Technology Co Ltd
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Priority to CN201711190477.0A priority Critical patent/CN107978615A/en
Publication of CN107978615A publication Critical patent/CN107978615A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Abstract

The invention discloses a kind of manufacture method of flexible organic film transistor base, and when manufacturing OTFT structures, the patterning of layers of material is completed in the neighbouring same mask of materials'use, single exposure, successively development or etching up and down；Wherein, when manufacturing the OTFT structures of bottom gate bottom contact, organic semiconductor layer and passivation layer use a mask plate, if organic semiconductor layer and passivation layer, which are light, consolidates material, then single exposure, development can complete the patternings of both materials, otherwise organic semiconductor layer can be etched using passivation layer as mask, whole OTFT array substrate, which is formed, needs 4 mask plates；When manufacturing the OTFT structures of top-gated bottom contact, organic semiconductor layer, gate insulation layer, grid metal electrode and scan line use a mask plate, the patterning of trilaminate material is completed in single exposure, development, three times etching, and whole OTFT array substrate, which is formed, needs 4 mask plates.The method of the present invention improves aligning accuracy, improves production efficiency.

Description

A kind of manufacture method of flexible organic film transistor base
Technical field
The present invention relates to Organic Thin Film Transistors manufacturing field, particularly a kind of system of flexible organic film transistor base Make method.
Background technology
In recent years, with the development of the application fields such as flexible electronic, intelligent sensing, Organic Thin Film Transistors (OTFT, Organic Thin Film Transistor) it is extensive with its material source, can large area, low cost suitable for flexible base board The features such as production as research hot spot.
Usual OTFT structures include gate electrode, gate insulation layer, organic semiconductor layer, source-drain electrode, are stacked according to each layer suitable Sequence is different, can be divided into the contact of bottom gate bottom, bottom gate top contact, top-gated top contact and top-gated bottom and contact four kinds of structures.It is fabricated to display With array base palte, the scan line that further includes connection gate electrode, the data cable for connecting source electrode, the pixel electrode for connecting drain electrode, Interlayer insulating film and storage capacitor electrode between drain electrode and pixel electrode time etc., as shown in Figure 1.At present, every layer of figure The preparation of case is realized using photoetching process, and the making of whole OTFT substrates needs 6 mask plates.Usual photoetching process bag Being coated with containing photoresist, exposed and developed process.
In existing photoetching technique, the formation per layer pattern is required for fine mask plate, needs between layers accurate Contraposition, since required mask plate quantity is more, contraposition require it is high, so relative productivity is low, of high cost.For example, China is specially Sharp CN102629620 B use continuous sputtering pixel electrode layer and source-drain electrode layer, utilize half-exposure or technique of gray-scale mask one Secondary contraposition exposure, development, a photoresist ashing, the method etched twice obtain source-drain electrode, pixel electrode and data cable.Phase Than in tradition, this method only reduces once contraposition exposure, and development (equivalent to ashing) and process etching are not reduced, and are had Machine semi-conducting material is very sensitive to water, oxygen and other chemical solutions, can seriously cause especially during photoresist ashing Its performance degradation.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of manufacture method of flexible organic film transistor base, more Layer material single exposure, development, save mask plate cost, improve aligning accuracy, improve production efficiency；Effectively protect and organic partly lead Body and its interface, from the damage of other chemical liquids or plasma, are conducive to the stabilization of its performance.
In order to solve the above technical problems, the technical solution adopted by the present invention is：
A kind of manufacture method of flexible organic film transistor base, for manufacturing bottom gate bottom contact structures substrate, including Following steps：
Step 1：Used on substrate into membrane means and prepare the first conductive layer, the material of first conductive layer is metal, Metal oxide is nonmetallic；
Step 2：Using first mask plate, OTFT gate electrodes are completed using photoetching process and wet etching, scan line and The patterning of its contact feet position, storage capacitor electrode and its public end feet position；
Step 3：Insulating layer material is prepared using into membrane means, using second mask plate, using photoetching process and wet method Etching completes the patterning of insulating layer, exposes the public foot position of scan-line electrode, storage capacitance；For receiving the light of certain wavelength just Cured insulating materials can be crosslinked, i.e. light thermoset material completes insulating layer material by the photoetching process and wet etching Patterning, the light for receiving certain wavelength just can be sent out and decomposes and is dissolved in the insulating layer material of specific solvent, is i.e. light soluble materials The patterning of insulating layer material is completed again by the photoetching process and wet etching；
Step 4：The second conductive layer is prepared using into membrane means, using the 3rd mask plate, using photoetching process and wet method Etching completes source electrode, drain electrode, pixel electrode, data cable and its patterning of contact feet position；Wherein, pixel electrode is amplification Drain electrode；
Step 5：It is continuous using preparing organic semiconductor layer and insulating protective layer into membrane means, using the 4th mask plate, Use photoetching process and using insulation protection layer material as mask, wet etching is carried out to organic semiconducting materials, completes semiconductor The patterning of layer and insulating protective layer；If for being all that light is solid or light dissolubility, organic semiconductor material that same solvent can be dissolved in Material and insulating layer material, the patterning of materials at two layers is completed by the once photoetching process and wet etching.
Specifically, in step 1, the metal includes gold, silver, copper, aluminium, molybdenum, tungsten and its alloy, it is described it is nonmetallic including Graphene, carbon nanotubes and conducting polymer materials.
Specifically, described include deposition, coating or printing into membrane means.
A kind of manufacture method of flexible organic film transistor base, for manufacturing top-gated bottom contact structures substrate, including Following steps：
Step 1：Used on substrate into membrane means and prepare the first conductive layer, the material of first conductive layer is metal, Metal oxide is nonmetallic；
Step 2：Using first mask plate, OTFT source electrodes, drain electrode, data are completed using photoetching process and wet etching Line and its patterning of contact feet position, storage capacitor electrode and its public end feet position；
Step 3：It is continuous to prepare organic semiconductor, insulating layer material and the second conductive layer using into membrane means；Use second Mask plate is opened, using the development of photoetching process single exposure, organic semiconductor, insulating layer material and the second conduction are completed in etching three times The patterning of layer；Wherein, it is to etch the second conductive layer, i.e. OTFT grids and scan-line electrode for the first time respectively to etch three times, the Second etch insulating layer and third time etching organic semiconductor layer；
Step 4：Interlayer insulating film or flat layer material are prepared using into membrane means, using the 3rd mask plate, using light Carving technology and wet etching complete drain electrode-pixel electrode contact hole and perimeter data, scan line contact feet bit patterns；
Step 5：The 3rd conductive layer is prepared using into membrane means, using the 4th mask plate, using photoetching process and wet method Etching completes the patterning of pixel electrode.
Specifically, in step 1, the metal includes gold, silver, copper, aluminium, molybdenum, tungsten and its alloy；It is described it is nonmetallic including Graphene, carbon nanotubes and conducting polymer materials.
Specifically, described include deposition, coating or printing into membrane means.
Compared with prior art, the beneficial effects of the invention are as follows：1) multilayer material single exposure, development, save mask plate Cost, improves aligning accuracy, improves production efficiency；2) organic semiconductor and its interface are effectively protected, from other chemical liquids Or the damage of plasma, be conducive to the stabilization of its performance.
Brief description of the drawings
Fig. 1 is the OTFT substrates manufactured using conventional method.
Fig. 2 is that OTFT substrates shown in Fig. 1 are followed the arrow the diagrammatic cross-section in direction.
Fig. 3 is the OTFT substrates contacted using the bottom gate bottom of the method for the present invention manufacture.
Fig. 4 is that OTFT substrates shown in Fig. 3 are followed the arrow the diagrammatic cross-section in direction.
Fig. 5 is the OTFT substrates contacted using the top-gated bottom of the method for the present invention manufacture.
Fig. 6 is that OTFT substrates shown in Fig. 5 are followed the arrow the diagrammatic cross-section in direction.
In figure：1- pixel electrode layers；2- interlayer insulating films；3- insulating layer materials (gate insulation layer)；4- organic semiconductor layers； 5- barrier metal layers；6- sources, drain metal layer；7- insulating protective layers.
Embodiment
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
In OTFT structures, the neighbouring same mask of materials'use, single exposure, develop or etch completion respectively successively up and down The patterning of layer material.Fig. 3 is the OTFT structures of bottom gate bottom contact, wherein organic semiconductor layer and passivation layer (insulating protective layer) Using a mask plate, consolidate material if organic semiconductor layer and passivation layer are light, single exposure, development can complete both The patterning of material, otherwise can be etched organic semiconductor layer using passivation layer as mask, whole OTFT array substrate shape Into 4 mask plates of needs；Fig. 5 is the OTFT structures of top-gated bottom contact, wherein organic semiconductor layer, gate insulation layer, grid metal electricity Pole and scan line use a mask plate, single exposure, development, and the patterning of trilaminate material, whole OTFT are completed in etching three times Array base palte, which is formed, needs 4 mask plates.
Details are as follows for the method for the present invention：
First, bottom gate bottom contact structures
1.1st, the first conductive layer is deposited, is coated with or printed on substrate, its material can be metal, metal oxide or non- Metal, metal such as gold, silver, copper, aluminium, molybdenum, tungsten and its alloy；Nonmetallic such as graphene, carbon nanotubes and conducting polymer materials.
1.2nd, using first mask plate, using photoetching process and wet etching complete OTFT gate electrodes, scan line and its The patterning of contact feet position, storage capacitor electrode and its public end feet position.
1.3rd, deposit, be coated with or print insulating layer material, using second mask plate, using photoetching process and wet etching The patterning of insulating layer is completed, exposes the public foot position of scan-line electrode, storage capacitance；It can just be sent out for the light for receiving certain wavelength The insulating materials (hereinafter referred to as light thermoset material) of raw crosslinking curing can complete insulating layer material by the photoetching process Patterning, equally the light for receiving certain wavelength just can be sent out and decomposes and is dissolved in insulating materials (the hereinafter referred to as light of specific solvent Soluble materials) patterning of insulating layer material can be also completed by the photoetching process.
1.4th, deposit, be coated with or print the second conductive layer, using the 3rd mask plate, using photoetching process and wet etching Completion source, drain electrode, the patterning of pixel electrode, data cable and its contact feet position；Wherein, pixel electrode is the drain electrode of amplification.
1.5th, successive sedimentation, coating or printing organic semiconductor layer and passivation layer, using the 4th mask plate, using photoetching Technique carries out wet etching using passivation material as mask, to organic semiconducting materials, completes the figure of semiconductor layer and passivation layer Case.For being all that light is solid or light dissolubility, the organic semiconducting materials and insulating layer material of same solvent can be dissolved in, pass through one The secondary photoetching process can complete the patterning of materials at two layers.
Wherein, the patterning process of step 1.3 can be formed together with the patterning process of step 1.5, whole substrate manufacture Only needing 3 needs mask plate.In step 1.5, for light curable type organic semiconductor and passivation material, and both unexposed portions can With same developer solution, the pattern of materials at two layers can be formed after exposure, development.
2nd, top-gated bottom contact structures
2.1st, the first conductive layer is deposited, is coated with or printed on substrate, its material can be metal, metal oxide or non- Metal, metal such as gold, silver, copper, aluminium, molybdenum, tungsten and its alloy；Nonmetallic such as graphene, carbon nanotubes and conducting polymer materials.
2.2nd, using first mask plate, OTFT sources, drain electrode, data cable and its contact feet are completed using photoetching process The patterning of position, storage capacitor electrode and its public end feet position.
2.3rd, successive sedimentation, coating or printing organic semiconductor, insulating layer material and the second conductive layer, are covered using second Film version, using the development of photoetching process single exposure, organic semiconductor, insulating layer material and the second conductive layer are completed in etching three times Patterning.Wherein, it is the second conductive layer of etching for the first time respectively to etch three times, i.e. OTFT grids and scan-line electrode, for the second time Etching isolation layer material and third time etching organic semiconductor layer.
2.4th, deposit, be coated with or print interlayer insulating film or flat layer material, using the 3rd mask plate, using photoetching work Skill and wet etching complete drain electrode-pixel electrode contact hole and perimeter data, scan line contact feet bit patterns.
2.5th, deposit, be coated with or print the 3rd conductive layer, using the 4th mask plate, using photoetching process and wet etching Complete the patterning of pixel electrode.
Wherein, in step 2.3, etched twice i.e. for the semi-conducting material and gate insulation layer for dissolving in same solvent Can, i.e., conductive material, second of etching organic semiconductor and gate insulation layer are etched for the first time.

Claims (6)

  1. A kind of 1. manufacture method of flexible organic film transistor base, for manufacturing bottom gate bottom contact structures substrate, its feature It is, comprises the following steps：
    Step 1：Used on substrate into membrane means and prepare the first conductive layer, the material of first conductive layer is metal, metal Oxide is nonmetallic；
    Step 2：Using first mask plate, OTFT gate electrodes are completed using photoetching process and wet etching, scan line and its are connect The patterning of haptic element position, storage capacitor electrode and its public end feet position；
    Step 3：Insulating layer material is prepared using into membrane means, using second mask plate, using photoetching process and wet etching The patterning of insulating layer is completed, exposes the public foot position of scan-line electrode, storage capacitance；It can just be sent out for the light for receiving certain wavelength The insulating materials of raw crosslinking curing, i.e. light thermoset material complete the figure of insulating layer material by the photoetching process and wet etching Case, just can send out decomposition to the light for receiving certain wavelength and be dissolved in the insulating layer material of specific solvent, is i.e. light soluble materials are same The patterning of insulating layer material is completed by the photoetching process and wet etching；
    Step 4：The second conductive layer is prepared using into membrane means, using the 3rd mask plate, using photoetching process and wet etching Complete source electrode, drain electrode, pixel electrode, data cable and its patterning of contact feet position；Wherein, pixel electrode is the leakage of amplification Pole；
    Step 5：Continuous use into membrane means prepares organic semiconductor layer and insulating protective layer, uses the 4th mask plate, uses Organic semiconducting materials are carried out wet etching by photoetching process and using insulation protection layer material as mask, complete semiconductor layer and The patterning of insulating protective layer；If for be all that light is solid or light dissolubility, the organic semiconducting materials of same solvent can be dissolved in and Insulating layer material, the patterning of materials at two layers is completed by the once photoetching process and wet etching.
  2. 2. a kind of manufacture method of flexible organic film transistor base as claimed in claim 1, it is characterised in that in step In 1, the metal includes gold, silver, copper, aluminium, molybdenum, tungsten and its alloy, described nonmetallic including graphene, carbon nanotubes and conduction Polymeric material.
  3. A kind of 3. manufacture method of flexible organic film transistor base as claimed in claim 1, it is characterised in that it is described into Membrane means include deposition, coating or printing.
  4. A kind of 4. manufacture method of flexible organic film transistor base, for manufacturing top-gated bottom contact structures substrate, its feature It is, comprises the following steps：
    Step 1：Used on substrate into membrane means and prepare the first conductive layer, the material of first conductive layer is metal, metal Oxide is nonmetallic；
    Step 2：Using first mask plate, using photoetching process and wet etching complete OTFT source electrodes, drain electrode, data cable and The patterning of its contact feet position, storage capacitor electrode and its public end feet position；
    Step 3：It is continuous to prepare organic semiconductor, insulating layer material and the second conductive layer using into membrane means；Covered using second Film version, using the development of photoetching process single exposure, organic semiconductor, insulating layer material and the second conductive layer are completed in etching three times Patterning；Wherein, it is to etch the second conductive layer, i.e. OTFT grids and scan-line electrode for the first time respectively to etch three times, second Etching isolation layer and third time etching organic semiconductor layer；
    Step 4：Interlayer insulating film or flat layer material are prepared using into membrane means, using the 3rd mask plate, using photoetching work Skill and wet etching complete drain electrode-pixel electrode contact hole and perimeter data, scan line contact feet bit patterns；
    Step 5：The 3rd conductive layer is prepared using into membrane means, using the 4th mask plate, using photoetching process and wet etching Complete the patterning of pixel electrode.
  5. 5. a kind of manufacture method of flexible organic film transistor base as claimed in claim 4, it is characterised in that in step In 1, the metal includes gold, silver, copper, aluminium, molybdenum, tungsten and its alloy；It is described nonmetallic including graphene, carbon nanotubes and conduction Polymeric material.
  6. A kind of 6. manufacture method of flexible organic film transistor base as claimed in claim 4, it is characterised in that it is described into Membrane means include deposition, coating or printing.
CN201711190477.0A 2017-11-24 2017-11-24 A kind of manufacture method of flexible organic film transistor base Pending CN107978615A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102723334A (en) * 2012-06-07 2012-10-10 南京中电熊猫液晶显示科技有限公司 Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display
CN103094203A (en) * 2011-11-02 2013-05-08 元太科技工业股份有限公司 Array substrate and manufacturing method thereof
CN104362127A (en) * 2014-11-21 2015-02-18 深圳市华星光电技术有限公司 Manufacturing method and device for thin film transistor substrate
US20170221967A1 (en) * 2016-01-28 2017-08-03 Shenzhen China Star Optoelectronics Technology Co., Ltd. Flexible array substrate structure and manufacturing method for the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094203A (en) * 2011-11-02 2013-05-08 元太科技工业股份有限公司 Array substrate and manufacturing method thereof
CN102723334A (en) * 2012-06-07 2012-10-10 南京中电熊猫液晶显示科技有限公司 Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display
CN104362127A (en) * 2014-11-21 2015-02-18 深圳市华星光电技术有限公司 Manufacturing method and device for thin film transistor substrate
US20170221967A1 (en) * 2016-01-28 2017-08-03 Shenzhen China Star Optoelectronics Technology Co., Ltd. Flexible array substrate structure and manufacturing method for the same

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Application publication date: 20180501