CN100445852C - Method for making organic thin film transistor and method for making liquid crystal display using same - Google Patents

Method for making organic thin film transistor and method for making liquid crystal display using same Download PDF

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CN100445852C
CN100445852C CNB200510077422XA CN200510077422A CN100445852C CN 100445852 C CN100445852 C CN 100445852C CN B200510077422X A CNB200510077422X A CN B200510077422XA CN 200510077422 A CN200510077422 A CN 200510077422A CN 100445852 C CN100445852 C CN 100445852C
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substrate
organic
membrane
inoranic membrane
photoresist pattern
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CN1743930A (en
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徐铉植
南大铉
崔洛奉
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LG Display Co Ltd
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LG Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Abstract

The invention provides a method for fabricating organic thin film transistor and a method for fabricating liquid crystal display device using the same. A method for fabricating an organic thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the substrate including the gate electrode, forming an organic active pattern on the gate insulating layer using a rear exposing process, and forming source and drain electrodes on the organic active pattern.

Description

Make the method for OTFT and make the method for liquid crystal display device with it
Technical field
The present invention relates to a kind of method of making OTFT, what particularly a kind of employing back-exposure technology (rear exposing process) formed active layer is used to make the method for OTFT and the method that this method of use is made liquid crystal display device.
Background technology
Along with the development of polyacetylene (conjugation organic polymer) with characteristic of semiconductor because organic semiconductor is easy to form film-type, with and the superiority of pliability, conduction and low production cost aspect, so it has obtained positive research.Organic semiconductor can be used for electron device or optical device.
In using the polymeric device of semiconductor, the OTFT (OTFT) of use organic material has become the focus of a lot of ongoing researchs.Usually, OTFT has the structure similar to Si-TFT, and still, in semiconductor regions, OTFT uses organic material to replace Si.
OTFT has a lot of advantages: can form film by the printing technology under the atmospheric pressure, needing replace the plasma enhanced CVD (PECVD) that is used to form existing Si film of subatmospheric (sub-atmospheric pressure); The roll-to-roll technology (roll-to-roll process) of plastic base can be used, and transistor cheaply can be realized.
Figure 1A shows the sectional view of making the method for OTFT (OTFT) according to prior art to 1E.In Figure 1A, the method for making OTFT according to prior art comprises preparation transparency carrier 10.Particularly, deposit first metal material, and with photoetching process to its composition to form grid 11.This photoetching process comprises: the photoresist film coating process, and it is coated with photoresist film on the etching target layer that will form pattern; Exposure technology is aimed at mask on photoresist film, and through this mask irradiates light; Developing process is removed the part of the illuminated mistake of photoresist film by using developer, forms the photoresist pattern on etching target layer; Etch process, its with photoresist pattern as mask etching target layer is carried out etching, form required pattern; And stripping technology, its removal remains in the photoresist pattern on the pattern.For example, first metal material is an etching target layer, when first metal material is etched, forms the pattern of grid 11.
Subsequently, use the plasma-reinforced chemical vapor deposition method that SiNx or SiOx are deposited on the whole surface of first substrate 10 that comprises grid 11, to form gate insulation layer 13.
In Figure 1B, the low molecule organic material (as pentacene) of deposit on the upper surface of gate insulation layer 13 is with formation active patterns 15 on the corresponding part of gate insulation layer 13 and grid 11.Because photoresist film has changed the electrical characteristics of pentacene, so can not use traditional photoetching process.Therefore, form active patterns 15 with shadow mask (shadow mask).Shadow mask has the specific open zone that allows to form pattern, and its principle is different with the mask that is used for traditional exposure technology.For example, the mask that is used for traditional exposure technology is divided into a plurality of zones of resistance light or printing opacity, and shadow mask is divided into open zone and closed area, thereby the material that is used to form pattern forms the pattern identical with the open zone only by the open zone deposit.But, to compare with the pattern that forms with mask with the pattern that shadow mask forms, degree of accuracy is relatively poor.
Shown in Fig. 1 C, deposit second metal material on active layer 15, and to its composition on active layer 15, to form source electrode 16 and drain electrode 17.Particularly, grid 11 is similar with forming, and utilizes this second metal material of photoetching process composition to form source electrode 16 and drain electrode 17.
In Fig. 1 D, inorganic thin film or organic film are deposited on the whole surface of the substrate 10 that comprises source electrode 16 and drain electrode 17, and have formed passivating film 18.Utilize photoetching process to passivating film 18 compositions, form the contact hole 19 that exposes drain electrode 17.
In addition, shown in Fig. 1 E, transparent conductive material (as ITO) is deposited on the whole surface of the substrate 10 that comprises contact hole 19, and patterned and form by the contact hole 19 and 17 pixel electrodes that are electrically connected 20 that drain.Utilize photoetching process that transparent conductive material is carried out composition, to form contact hole 19.
But, because need shadow mask to form active patterns according to the method for prior art manufacturing OTFT, thus the reduction of the precision of active patterns, and the quantity that mask uses increases, thus reduced manufacturing efficient, make the electrical characteristics deterioration of OTFT.
Summary of the invention
Therefore, the present invention aims to provide a kind of method of making OTFT and uses this method to make the method for liquid crystal display device, has solved the one or more problem that limitation and shortcoming because of prior art cause substantially.
The purpose of this invention is to provide a kind of method that forms the manufacturing OTFT (OTFT) of accurate pattern.
Another object of the present invention provides a kind of by omitting shadow mask and reducing the method that mask quantity is come the manufacturing OTFT of simplified manufacturing technique.
Another object of the present invention provides a kind of by the active layer of increase OTFT and the method for the manufacturing OTFT that the contact area between the source/drain improves the OTFT electrical property.
Other characteristics of the present invention and advantage will be illustrated in the following description, and partly become in explanation obviously, or the acquistion by putting into practice the present invention.The structure that particularly points out in the instructions of being write and claims and the accompanying drawing will realize and obtain these purposes of the present invention and other advantage.
In order to realize the advantage of these and other, and according to purpose of the present invention, example and generalized description as shown, a kind of method of making OTFT comprises: form grid on substrate; Comprising stacking gate insulation course on the described substrate of described grid; On gate insulation layer, form organic membrane and inoranic membrane; Coating first photoresist film on described inoranic membrane; By the back side illuminaton light of substrate, make described first photoresist film exposure; Described first photoresist film that develops and exposed is to form the first photoresist pattern in the zone corresponding to described grid; With use the described first photoresist pattern as mask, described organic membrane of etching and inoranic membrane are to form organic active patterns; The part of the inoranic membrane of the organic active patterns of etching is with the part of the organic membrane that exposes organic active patterns; And on the exposed portions serve of the organic membrane of inoranic membrane and organic active patterns, form source electrode and drain electrode.
On the other hand, a kind of method of making liquid crystal display device comprises: form grid on first substrate; Comprising stacking gate insulation course on described first substrate of described grid; On described gate insulation layer, form organic membrane and inoranic membrane; Coating first photoresist film on described inoranic membrane; By back side illuminaton light, make described first photoresist film exposure via described first substrate; First photoresist film that develops and exposed is to form the first photoresist pattern in the zone corresponding to described grid; As mask, described organic membrane of etching and described inoranic membrane are to form organic active patterns with the described first photoresist pattern; The part of the inoranic membrane of the described organic active patterns of etching is with the part of the organic membrane that exposes described organic active patterns; On the part of exposing of the organic membrane of described inoranic membrane and described organic active patterns, form source electrode and drain electrode; First substrate is attached on second substrate, has therebetween at interval; And form liquid crystal layer in the described interval between first substrate and second substrate.
Should be appreciated that the general description of front and following detailed all are exemplary with illustrative, and are intended to the desired further instruction that the invention provides.
Description of drawings
Included accompanying drawing is used for further understanding the present invention, and it is merged in and constitutes the part of this instructions.Accompanying drawing shows embodiments of the invention, and is used from explanation principle of the present invention with instructions one.In the accompanying drawings:
Figure 1A shows sectional view according to the method for the manufacturing OTFT (OTFT) of prior art to 1E;
Fig. 2 A shows the sectional view of making the method for OTFT according to embodiments of the invention to 2E;
Fig. 3 A shows the sectional view of the method for the active layer that is used to form the OTFT shown in Fig. 2 B to 3C;
Fig. 4 shows and utilizes the sectional view of Fig. 2 A to liquid crystal display (LCD) device of the technology formation of Fig. 2 E;
Fig. 5 A shows sectional view according to the method for the manufacturing OTFT of another embodiment of the present invention to Fig. 5 E;
Fig. 6 A shows the sectional view of the method for the active layer that forms the OTFT shown in Fig. 5 B to Fig. 6 E; With
Fig. 7 shows and utilizes the sectional view of Fig. 5 A to the LCD device of the technology formation of Fig. 5 E.
Embodiment
To explain the preferred embodiments of the present invention now, its example is shown in the drawings.
Fig. 2 A shows sectional view according to the method for the manufacturing OTFT of embodiments of the invention to Fig. 2 E, and Fig. 3 A shows the sectional view of the method for the active layer that forms the OTFT shown in Fig. 2 B to Fig. 3 C.Shown in Fig. 2 A, the method for making OTFT comprises preparation first transparency carrier 110.Particularly, deposit first conductive material, and to its composition to form grid 111.
First conductive material can comprise a kind of in copper (Cu), titanium (Ti), chromium (Cr), aluminium (Al), molybdenum (Mo), tantalum (Ta) and the aluminium alloy, and can utilize photoetching process that this first conductive material is carried out composition.Photoetching process can comprise: the coating process of photoresist film is used for will forming thereon on the etching target layer of pattern and is coated with photoresist film; Exposure technology, its alignment mask on photoresist film is also passed through this mask irradiates light; Developing process forms the photoresist pattern by using developer to remove the part of the illuminated mistake of photoresist film on etching target layer; Etch process, it utilizes the photoresist pattern as mask, and etching target layer is carried out etching, forms required pattern; Stripping technology, it removes residual photoresist pattern on the pattern.First conductive material for example can be an etching target layer, and when this first conductive material of etching composition grid 111.
Alternatively, first conductive material can comprise silver slurry (Ag paste), and first conductive material can be printed on first substrate 110 to form grid 111.Because printing technology can under atmospheric pressure be carried out, and is much simpler than photoetching process, so improved production efficiency.
On first substrate 110, form after the grid 111, form inorganic material comprising on first substrate, the 110 whole surfaces of grid 111, to form gate insulation layer 113.Inorganic material can comprise a kind of in silicon nitride (SiNx) film and Si oxide (SiOx) film.Alternatively, replace inorganic material, can on the whole surface of first substrate 110, form organic material.Organic material can comprise polyvinyl pyrrolidone (PVP, poly-vinyl-pyrrolidone) and polymethylmethacrylate (PMMA, one of poly-methly-methacrylate), and can on first substrate 110, be coated with organic material, to form gate insulation layer 113.Because coating process can not use vacuum equipment under atmospheric pressure to carry out, therefore improved production efficiency.
In Fig. 2 B, on gate insulation layer 113, form organic membrane and inoranic membrane successively, then to its composition with form active layer 115 and inorganic pattern 115 '.For example, can utilize back-exposure technology to organic membrane and inoranic membrane composition, with form respectively active layer 115 and inorganic pattern 115 '.Particularly, after forming organic membrane and inoranic membrane, can on inoranic membrane, be coated with photoresist film.Then, by the back side illuminaton light of first substrate 110, to form the photoresist pattern.That is, on the first surface of first substrate 110, form grid 111, gate insulation layer 113, organic membrane, inoranic membrane and photoresist film.And light shine first substrate with the first surface opposing second surface on, form the photoresist pattern.Then, pattern is as mask with photoresist, this inoranic membrane of etching and organic membrane, form active layer 115 and inorganic pattern 115 '.
As shown in Figure 3A, on the gate insulation layer on the first surface of first substrate 110 113, stack gradually organic membrane 115a and inoranic membrane 115 '.Organic membrane 115a can comprise: the low molecule organic material (as pentacene) that can form on first substrate 110 by deposition process, the organic material that can on first substrate 110, form by rubbing method maybe, as polyacrylamide (PAA, polyacrylamine).
For composition organic membrane 115a, need be coated with photoresist film 125a thereon.But if photoresist film 125a directly is coated on the organic membrane 115a, then the moisture that comprises among the photoresist film 125a can be penetrated among the organic membrane 115a.Particularly, if organic membrane 115a is exposed in the moisture, its electrical characteristics are lowered.Thereby, on organic membrane 115a, form inoranic membrane 115a ', prevent moisture, protection organic membrane 115a, thus improve product reliability.Inoranic membrane 115a ' can comprise that inorganic material is (as SiN X, SiO xOr indium oxide) a kind of in.Then, on inoranic membrane 115a, pile up photoresist film 125a.
As to upward arrow shown in, by the second surface irradiates light of first substrate 110, make photoresist film 125a exposure thereafter.Particularly because grid 111 stopped light, thereby has the function of mask, light can not shine photoresist film 125a with grid 111 corresponding parts.
Shown in Fig. 3 B, at the upside formation photoresist pattern 125 of grid 111.Particularly, after photoresist film 125a is by the light local irradiation (as shown in Figure 3A), with developer remove photoresist pattern 125 by the part of shine, thereby, formation photoresist pattern 125.
Shown in Fig. 3 C, form successively active layer 115 and inorganic pattern 115 '.Particularly, utilize photoresist pattern 125, etching organic membrane 115a and inoranic membrane 115 ' a (shown in Fig. 3 B) as mask.Although not shown, utilize stripping technology to remove photoresist pattern 125 subsequently.In addition, inorganic pattern 115 ' also can be removed or kept on active layer 115 by dry etching process.
Turn back to Fig. 2 C, after forming active layer 115, second conductive material is deposited on the whole surface of first substrate 110 that comprises active layer 115, and to its composition to form the source electrode 116 that contact with active layer 115 and to drain 117.Second conductive material can comprise a kind of in copper (Cu), titanium (Ti), chromium (Cr), aluminium (Al), molybdenum (Mo), tantalum (Ta) and the aluminium alloy (Al alloy), and can use photoetching process to its composition to form source electrode 116 and drain electrode 117.Particularly, second conductive material can be and the first conductive material identical materials.Alternatively, second conductive material can comprise the conductive polymer material, and can be applied or be printed on first substrate 110, to form source electrode 116 and drain electrode 117.Because coating or printing technology can under atmospheric pressure be carried out, and be much simpler than photoetching process, thereby improved production efficiency.
In Fig. 2 D, on the whole surface of first substrate 110 that comprises source electrode 116 and drain electrode 117, form passivating film 118.Passivating film 118 can comprise inorganic material (as SiNx or SiOx), or organic material (as benzocyclobutane (BCB) or acrylic acid).In addition, remove part passivating film 118 to form the contact hole 119 of exposed portions serve drain electrode 117.Can use photoetching process to form contact hole 119.Particularly, when forming passivating film 118 with organic material, technology can under atmospheric pressure be carried out, and it is simple when using inorganic material, thereby has improved production efficiency.
In Fig. 2 E, comprising formation pixel electrode 120 on first substrate 110 of passivating film 118 and contact hole 119.Particularly, form by contact hole 119 and drain electrode 117 pixel electrodes that are electrically connected 120.Pixel electrode 120 can comprise transparent conductive material.Transparent conductive material can be formed on first substrate 110, and can utilize photoetching process to its composition.In addition, transparent conductive material can comprise indium tin oxide (ITO) or indium-zinc oxide (IZO).Alternatively, macromolecule organic material (as ethylidene dioxy thiophenols (PEDOT, poly elyene dioxty thiospnene)) can be used for forming pixel electrode 120, and owing to its related process can under atmospheric pressure carry out, thereby it has more advantages.
Though not shown, first substrate 110 is mutually attached with second substrate that contains color filter and public electrode subsequently, and forms liquid crystal layer between first substrate 110 and second substrate, thereby form the LCD device.
Fig. 4 shows the sectional view of the LCD device that forms to the technology among the 2E with Fig. 2 A.In Fig. 4, LCD device 200 comprises first substrate 210 and second substrate 230.Particularly, first substrate 210 comprises OTFT and pixel electrode 220.OTFT comprises grid 211, gate insulation layer 213, active layer 215, inorganic pattern 215 ', source electrode 216 and drains 217, and can form passivating film 218 to the method shown in the 2E with Fig. 2 A.
In addition, second substrate 230 comprises black matrix 231, color filter 233 and the public electrode 235 that forms successively thereon.Then, first substrate 210 and second substrate 230 are attached to each other, and have spacing therebetween, and form liquid crystal layer 240 at first substrate 210 and 230 of second substrates.
Though be not described in detail in the method that forms black matrix 231, color filter 233 and public electrode 235 on second substrate 230, black matrix 231 can form with organic material or metal material.Public electrode 235 can use conductive material (as ITO or IZO) or condensate conductive material (as the PEDOT material the same with the pixel utmost point 220) to form.
Alternatively, though not shown, can on first substrate 210, form public electrode 235 and pixel electrode 220 both.Go up formation public electrode 235 and pixel electrode 220 at same substrate (for example first substrate 210), because the liquid crystal molecule horizontal drive of liquid crystal layer 240, so can improve viewing angle characteristic.
Therefore, comprise the active layer of usefulness back-exposure technology formation according to the OTFT of embodiments of the invention, thereby saved shadow mask technology.In addition, compared with the prior art, can form active layer more accurately.For example, in the prior art, utilize shadow mask to form organic active patterns, still, according to the characteristics of shadow mask, it can not provide meticulous pattern, and easy and substrate dislocation (misalign), so that can not accurately form active patterns.On the contrary, in an embodiment of the present invention, form inoranic membrane on organic membrane, use can provide the back-exposure technology of fine pattern, and grid has optionally stoped light, thereby defines the photoresist pattern.Thereby, can form active layer more accurately.
Fig. 5 A shows the sectional view of making the method for OTFT according to another embodiment of the present invention to 5E.Fig. 6 A shows the sectional view of the method for the active layer that forms the OTFT shown in Fig. 5 B to 6E.Shown in Fig. 5 A, the method for making OTFT comprises preparation first transparency carrier 310.Particularly, deposit first conductive material and to its composition to form grid 311.
First conductive material can comprise a kind of in copper (Cu), titanium (Ti), chromium (Cr), aluminium (Al), molybdenum (Mo), tantalum (Ta) and the aluminium alloy (Al alloy), and can utilize photoetching process to this first conductive material composition.Photoetching process can comprise: the coating process of photoresist film, and it is coated with photoresist film on the etching target layer that will form pattern; Exposure technology, alignment mask on photoresist film is by this mask irradiation light; Developing process forms the photoresist pattern by using developer to remove the part of the illuminated mistake of photoresist film on etching target layer; Etch process, it utilizes the photoresist pattern as mask, and etching target layer is carried out etching, forms required pattern; And stripping technology, it removes residual photoresist pattern on the pattern.First conductive material for example can be an etching target layer, and when this first conductive material of etching composition grid 311.
Alternatively, first conductive material can comprise the silver slurry, and first conductive material can be printed on first substrate 310 to form grid 311.Because printing technology can under atmospheric pressure be carried out, and is much simpler than photoetching process, so improved production efficiency.
After on first substrate 310, having formed grid 311, on the whole surface of first substrate 310 that comprises grid 311, form inorganic material, to form gate insulation layer 313.Inorganic material can comprise a kind of in silicon nitride (SiNx) film and Si oxide (SiOx) film.Alternatively, replace inorganic material, can on the whole surface of first substrate 310, form organic material.Organic material can comprise polyvinyl pyrrolidone (PVP, poly-vinyl-pyrrolidone) and polymethylmethacrylate (PMMA, one of poly-methly-methacrylate), and can on first substrate 310, be coated with organic material, to form gate insulation layer 313.Because coating process can not use vacuum equipment under atmospheric pressure to carry out, therefore improved production efficiency.
In Fig. 5 B, on gate insulation layer 313, form organic membrane and inoranic membrane successively, then to its composition with form active layer 315 and inorganic pattern 315 '.For example, can utilize back-exposure technology to organic membrane and inoranic membrane composition, with form respectively active layer 315 and inorganic pattern 315 '.Particularly, after forming organic membrane and inoranic membrane, can on inoranic membrane, be coated with photoresist film.Then, by the back side illuminaton light of first substrate 310, to form the photoresist pattern.That is, on the first surface of first substrate 310, form grid 311, gate insulation layer 313, organic membrane, inoranic membrane and photoresist film.And light shine first substrate 310 with the first surface opposing second surface on, form the photoresist pattern.Then, pattern is as mask with photoresist, this inoranic membrane of etching and organic membrane, form active layer 315 and inorganic pattern 315 '.
As shown in Figure 6A, on the gate insulation layer on the first surface of first substrate 310 113, stack gradually organic membrane 315a and inoranic membrane 315 '.Organic membrane 315a can comprise: the low molecule organic material (as pentacene) that can form on first substrate 110 by sedimentation, the organic material that can form on first substrate 110 by rubbing method maybe is as polyacrylamide (PAA).
For composition organic membrane 315a, need be coated with photoresist film 325a thereon.But if photoresist film 325a directly is coated on the organic membrane 315a, then the moisture that comprises among the photoresist film 325a can be penetrated among the organic membrane 315a.Particularly, if organic membrane 315a is exposed in the moisture, then its electrical characteristics are lowered.Thereby, on organic membrane 315a, form inoranic membrane 315 ' a, prevent moisture, protection organic membrane 315a, thus improve product reliability.Inoranic membrane 315 ' a can comprise that inorganic material is (as SiN X, SiO xOr indium oxide) a kind of in.Then, on inoranic membrane 315 ' a, pile up photoresist film 325a.
As to upward arrow shown in, by the second surface irradiates light of first substrate 310, make photoresist film 325a exposure thereafter.Particularly because grid 311 stopped light, thereby has the function of mask, light can not shine photoresist film 325a with grid 311 corresponding parts.
Shown in Fig. 6 B, at the upside formation photoresist pattern 325 of grid 311.Particularly, after photoresist film 325a is by the light local irradiation (as shown in Figure 6A), with developer remove photoresist pattern 325a by the part of being shone, thereby, form the first photoresist pattern 325.
Shown in Fig. 6 C, form the active layer 315 and first inorganic pattern 315 successively ".Particularly, utilize the first photoresist pattern 325, etching organic membrane 315a and inoranic membrane 315 ' a (shown in Fig. 6 B) as mask.
In Fig. 6 D, comprising the active layer 315 and first inorganic pattern 315 " first substrate 310 on form the second photoresist pattern 335.Particularly, form the active layer 315 and first inorganic pattern 315 and " utilizing afterwards, cineration technics (ashing process) part to remove the first photoresist pattern 325 (shown in Fig. 6 C).For example, cineration technics can ashes photoresist material, exposes first inorganic pattern 315 " the limit.When the ashes first photoresist pattern 325 surperficial, first inorganic pattern 315 along with these limits are removed, has just been exposed in the surface and the limit of just having removed the first photoresist pattern 325 " specific part, and its thickness is reduced.
Shown in Fig. 6 E, form subsequently inorganic pattern 315 '.Particularly, utilize the second photoresist pattern 335, the etching first inorganic pattern 315 " exposed portions serve of (shown in Fig. 6 D) as mask.The result has exposed the part upper surface and the limit of active layer 315.In addition, although not shown, utilize stripping technology to remove the second photoresist pattern 335 subsequently.
Turn back to Fig. 5 C, after forming active layer 315, second conductive material is deposited on the whole surface of first substrate 110 that comprises active layer 315, and to its composition to form the source electrode 316 that contact with active layer 315 and to drain 317.Particularly, owing to exposed the part upper surface of active layer 315, the surface of contact between active layer 315 and source electrode 316/ drain electrode 317 increases, thereby has improved the electrical characteristics of OTFT.
Second conductive material can comprise a kind of in copper (Cu), molybdenum (Mo), tantalum (Ta), aluminium (Al), chromium (Cr), titanium (Ti) and the aluminium alloy, and can use photoetching process to its composition to form source electrode 116 and drain electrode 117.Particularly, second conductive material can be and the first conductive material identical materials.Alternatively, second conductive material can comprise the conductive polymer material, and can be applied or be printed on first substrate 310, to form source electrode 316 and drain electrode 317.Because coating process or printing technology can under atmospheric pressure be carried out, and be much simpler than photoetching process, thereby improved production efficiency.
In Fig. 5 D, on the whole surface of first substrate 310 that comprises source electrode 316 and drain electrode 317, form passivating film 318.Passivating film 318 can comprise inorganic material (as SiNx or SiOx), or organic material (as benzocyclobutane (BCB) or acrylic acid).In addition, remove part passivating film 318 to form the contact hole 319 of exposed portions serve drain electrode 317.Can use photoetching process to form contact hole 319.Particularly, when forming passivating film 318 with organic material, technology can under atmospheric pressure be carried out, and it is simple when using inorganic material, thereby has improved production efficiency.
In Fig. 5 E, comprising formation pixel electrode 320 on first substrate 310 of passivating film 318 and contact hole 319.Particularly, form by contact hole 319 and drain electrode 317 pixel electrodes that are electrically connected 320.Pixel electrode 120 can comprise transparent conductive material.This transparent conductive material can be formed on first substrate 310, and can utilize photoetching process to its composition.In addition, transparent conductive material can comprise indium tin oxide (ITO) or indium-zinc oxide (IZO).Alternatively, macromolecule organic material (as ethylidene dioxy thiophenols (PEDOT)) can be used for forming pixel electrode 320, and owing to its related process can under atmospheric pressure carry out, thereby it has more advantages.
Though not shown, first substrate 310 can be mutually attached with second substrate that contains color filter and public electrode subsequently, and form liquid crystal layer between first substrate 310 and second substrate, thereby form the LCD device.
Therefore, according to embodiments of the invention, source electrode contacts the exposed portions serve of active layer upper surface and the limit of active layer with drain electrode.The result since removed inorganic pattern 315 ' the limit, exposed the part upper surface of active layer, so increased the contact area between active layer 315 and source electrode 316/ drain electrode 317.
Fig. 7 shows the sectional view of the LCD device that forms to the technology among the 5E with Fig. 5 A.In Fig. 7, LCD device 400 comprises first substrate 410 and second substrate 430.Particularly, first substrate 410 comprises OTFT and pixel electrode 420.OTFT comprise grid 411, gate insulation layer 413, active layer 415, inorganic pattern 415 ', source electrode 416 and drain 417, and can form passivating film 418 to the method among the 5E with Fig. 5 A.
In addition, second substrate 430 comprises black matrix 431, color filter 433 and the public electrode 435 that forms successively thereon.Then, first substrate 410 and second substrate 430 are attached to each other, and have spacing therebetween, and form liquid crystal layer 440 at first substrate 410 and 430 of second substrates.
Though be not described in detail in the method that forms black matrix 431, color filter 433 and public electrode 435 on second substrate 430, black matrix 431 can form with organic material or metal material.Public electrode 435 can use conductive material (as ITO or IZO) or condensate conductive material (as the PEDOT material the same with the pixel utmost point 240) to form.
Alternatively, though not shown, can on first substrate 410, form public electrode 435 and pixel electrode 420 both.Go up formation public electrode 435 and pixel electrode 420 at same substrate (for example first substrate 410), because the liquid crystal molecule horizontal drive of liquid crystal layer 440, so can improve viewing angle characteristic.
Therefore, do not need shadow mask to form the active layer of OTFT according to the method for the manufacturing OTFT of embodiments of the invention, thereby simplified manufacturing process.Particularly, in method according to the manufacturing OTFT of embodiments of the invention, replace shadow mask, on organic membrane, form inoranic membrane, at inoranic membrane coating photoresist film, utilize back-exposure technology to form the photoresist pattern on grid top, then with photoresist pattern as mask, etching organic membrane and inoranic membrane, and accurately form active layer.
In addition, in method, before forming source electrode and drain electrode according to the manufacturing OTFT of embodiments of the invention, the edge part of inoranic membrane is etched, exposed the part upper surface of active layer, the result has increased the contact area between active layer and the source/drain, thereby has strengthened the characteristic of OTFT.
In addition, because form active patterns, so reduced the mask quantity of using in the manufacture process with back-exposure technology.In addition, because shadow mask is normally expensive, so also reduced manufacturing cost and improved throughput rate according to the method for the manufacturing OTFT of embodiments of the invention.
In addition, in method according to the manufacturing OTFT of the embodiment of the invention, can use organic material or electricity slurry under atmospheric pressure to form grid, source electrode, drain electrode or passivating film with rubbing method or method for printing, and without deposition apparatus, thereby further improved production efficiency.
Though not shown, except that the LCD device, also can be used for making any device that utilizes TFT according to the method for the manufacturing thin film transistor (TFT) of the embodiment of the invention.
For a person skilled in the art, apparently, can under the situation that does not break away from the spirit and scope of the present invention, carry out multiple modification and modification to the method for manufacturing OTFT of the present invention and the method for using this method to make liquid crystal display device.Therefore, the invention is intended to cover these modifications of the present invention and modification, as long as they are in appended claim and the scope that is equal to thereof.
The present invention requires the korean patent application No.68693/2004 that submits in Korea S on August 30th, 2004 and the right of priority of the korean patent application No.68694/2004 that submits on August 30th, 2004, by reference it is incorporated in herein.

Claims (19)

1. method of making OTFT said method comprising the steps of:
On substrate, form grid;
Form gate insulation layer comprising on the described substrate of described grid;
On described gate insulation layer, pile up organic membrane and inoranic membrane;
Coating first photoresist film on described inoranic membrane;
By the back side illuminaton light of described substrate, make described first photoresist film exposure;
Described first photoresist film that develops and exposed is to form the first photoresist pattern in the zone corresponding to described grid; With
Use the described first photoresist pattern as mask, described organic membrane of etching and described inoranic membrane are to form organic active patterns;
The part of the described inoranic membrane of the described organic active patterns of etching is with the part of the organic membrane that exposes described organic active patterns; And
On the exposed portions serve of the described organic membrane of described organic active patterns and described inoranic membrane, form source electrode and drain electrode.
2. method according to claim 1 is characterized in that, the step of described formation organic membrane is included on the described gate insulation layer a kind of in the deposit pentacene and polyacrylamide.
3. method according to claim 1 is characterized in that, the step that forms inoranic membrane is included on the described organic membrane a kind of in deposit silicon nitride, Si oxide and the indium oxide.
4. method according to claim 1 is characterized in that, the step of the part of the described inoranic membrane of etching comprises:
Remove the part of the described first photoresist pattern, to form the second photoresist pattern, the described second photoresist pattern exposes the part of the inoranic membrane of etching; With
Use the described second photoresist pattern as mask, the exposed portions serve of the inoranic membrane of etching is carried out etching.
5. method according to claim 1 is characterized in that, the step that forms described grid comprises:
The depositing metal material; With
Use photoetching process that described metal material is carried out composition.
6. method according to claim 1 is characterized in that, the step that forms described grid is included in and prints the silver slurry on the described substrate.
7. method according to claim 1 is characterized in that, the step that forms described gate insulation layer is included in and is coated with organic material on the substrate.
8. method according to claim 7 is characterized in that, the organic material of described gate insulation layer comprises a kind of in polyvinyl pyrrolidone and the polymethylmethacrylate.
9. method according to claim 1 is characterized in that, the step that forms source electrode and drain electrode is included in to be printed on described organic active patterns or the coating conductive polymer.
10. method according to claim 1, described method also comprises:
On the whole surface of the described substrate that comprises described source electrode and drain electrode, form passivating film;
Form contact hole in described passivating film, described contact hole exposes the part of described drain electrode; With
Form pixel electrode on described passivating film, described pixel electrode is electrically connected with described drain electrode by described contact hole.
11. method according to claim 10 is characterized in that, described passivating film comprises organic material.
12. method according to claim 11 is characterized in that, the organic material of described passivating film comprises a kind of in the third rare and benzocyclobutane.
13. method according to claim 10 is characterized in that, described pixel electrode comprises organic material.
14. method according to claim 13 is characterized in that, the organic material of described pixel electrode comprises ethylidene dioxy thiophenols.
15. a method of making liquid crystal display device said method comprising the steps of:
On first substrate, form grid;
Form gate insulation layer comprising on described first substrate of described grid;
On described gate insulation layer, pile up organic membrane and inoranic membrane;
Coating first photoresist film on described inoranic membrane;
By back side illuminaton light, make described first photoresist film exposure via described first substrate;
First photoresist film that develops and exposed is to form the first photoresist pattern in the zone corresponding to described grid;
As mask, described organic membrane of etching and described inoranic membrane are to form organic active patterns with the described first photoresist pattern;
The part of the inoranic membrane of the described organic active patterns of etching is with the part of the organic membrane that exposes described organic active patterns;
On the part of exposing of the described organic membrane of described inoranic membrane and described organic active patterns, form source electrode and drain electrode;
Described first substrate is attached on second substrate, has therebetween at interval; With
Form liquid crystal layer in the described interval between described first substrate and described second substrate.
16. method according to claim 15 is characterized in that, forms described organic membrane
Step is included on the described gate insulation layer a kind of in the deposit pentacene and polyacrylamide.
17. method according to claim 15 is characterized in that, the step of the organic active patterns of described formation comprises:
Remove the part of the described first photoresist pattern, to form the second photoresist pattern, the described second photoresist pattern exposes the part of the inoranic membrane of etched mistake; With
Use the described second photoresist pattern as mask, the exposed portions serve of the inoranic membrane of etched mistake is carried out etching.
18. method according to claim 15, described method also comprises:
On the whole surface of the substrate that comprises described source electrode and drain electrode, form passivating film;
Form contact hole in described passivating film, described contact hole exposes the part of described drain electrode; With
Form pixel electrode on described passivating film, described pixel electrode is electrically connected with described drain electrode by described contact hole.
19. method according to claim 15, described method also comprises:
On described second substrate, form black matrix;
On described black matrix, form color filter; With
On described color filter, form public electrode.
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