CN101013740B - Organic thin film transistor and method for manufacturing the same - Google Patents

Organic thin film transistor and method for manufacturing the same Download PDF

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Publication number
CN101013740B
CN101013740B CN2006101452571A CN200610145257A CN101013740B CN 101013740 B CN101013740 B CN 101013740B CN 2006101452571 A CN2006101452571 A CN 2006101452571A CN 200610145257 A CN200610145257 A CN 200610145257A CN 101013740 B CN101013740 B CN 101013740B
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adhesive layer
layer
gate insulation
drain electrode
organic semiconductor
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CN101013740A (en
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韩敞昱
李在允
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LG Display Co Ltd
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LG Display Co Ltd
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Priority claimed from KR1020050134406A external-priority patent/KR101147107B1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area betweenan organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

Description

OTFT and manufacture method thereof
The application requires to enjoy all the korean patent application No.P2005-134406 that submits on December 29th, 2005 and the rights and interests of P2005-134410, and is at this that its full content is as a reference incorporated.
Technical field
The present invention relates to a kind of thin-film transistor and manufacture method thereof, and relate in particular to a kind of OTFT and manufacture method thereof.
Background technology
Usually, adopt the switch element of thin-film transistor as display device.Thin-film transistor can be formed by various materials, for example, and silicon and organic material.OTFT is formed by organic semiconducting materials.In addition, OTFT adopts flexible base, board instead of glass substrate.Except OTFT adopted organic semiconducting materials and flexible base, board, the structure and the silicon thin film transistor of OTFT were similar.
Figure 1 shows that the sectional view of prior art OTFT.As shown in Figure 1, the prior art OTFT is included in the grid 52a that is made of metal material on the infrabasal plate 51; Be formed at the gate insulation layer 53 on the infrabasal plate 51 that comprises grid 52a; With grid 52a both sides of the edge overlapping and be formed on the gate insulation layer 53 source electrode 55a and the drain electrode 55b; And be formed on comprise source electrode 55a and the drain electrode 55b gate insulation layer 53 on organic semiconductor layer 54.Here, source electrode 55a and drain electrode 55b are formed by the inorganic metal material such as palladium (Pd) or silver (Ag).
For above-mentioned OTFT, gate insulation layer 53 is formed by organic material.The gate insulation layer 53 that is made of organic material is carried out plasma treatment with the source electrode 55a that improves the gate insulation layer 53 that is made of organic material and be made of metal material and the bonding force between the drain electrode 55b.
But, have water-wet behavior through the gate insulation layer of plasma treatment.If form organic semiconductor layer having on the gate insulation layer of water-wet behavior, this organic semiconductor layer little crystal grain of can growing then.
Fig. 2 A is depicted as and is not passing through the grainiess that forms organic semiconductor layer on the gate insulation layer with hydrophobic property of plasma treatment.Fig. 2 B is depicted as through forming the grainiess of organic semiconductor layer on the gate insulation layer with water-wet behavior of plasma treatment.Comparison diagram 2A and Fig. 2 B, the crystallite dimension that is formed on the organic semiconductor layer on the gate insulation layer with water-wet behavior is less than the crystallite dimension that is formed on the organic semiconductor layer on the gate insulation layer with hydrophobic property.
If have the organic semiconductor layer that formation has little crystallite dimension on the gate insulation layer of water-wet behavior, then, little crystallite dimension increases owing to causing the grain boundary, because the grain boundary is used as the charge-trapping position, the electrical characteristics of organic semiconductor layer can variation.
Summary of the invention
Therefore, the invention provides a kind of OTFT and manufacture method thereof, it can avoid one or more problems of being caused by the limitation of prior art and shortcoming basically.
The object of the present invention is to provide a kind of OTFT and manufacture method thereof, it can improve device property by being reduced in the contact resistance that produces in the contact area between organic semiconductor layer and source electrode and the drain electrode.
Additional advantages of the present invention, purpose and feature will be set forth in the following description, wherein Partial Feature and advantage can be seen from following description for being familiar with those of ordinary skill in the art apparently, perhaps learn from the practice of the present invention. by the structure that specifically indicates in specification of the present invention, claims and accompanying drawing, purpose of the present invention and other advantage can obtain understanding and realizing.
In order to realize these purposes and other advantage, and according to purpose of the present invention, to carry out concrete here and extensively describe, a kind of OTFT comprises the grid that is formed on the substrate; Be formed on the gate insulation layer on this grid; Overlapping and be formed on the source electrode and the drain electrode of gate insulation layer top with the grid both sides of the edge; Be formed on the organic semiconductor layer of the gate insulation layer top that is formed with source electrode and drain electrode; Be formed on first adhesive layer between described gate insulation layer and described source electrode and the drain electrode with water-wet behavior; And be formed on second adhesive layer between described organic semiconductor layer and the described gate insulation layer with hydrophobic property, wherein by first adhesive layer between described source electrode and the drain electrode being carried out second plasma treatment or by mold is contacted described second adhesive layer of formation with the predetermined portions of this first adhesive layer with hydrophobic property.
In another aspect of this invention, a kind of OTFT comprises the resilient coating that is formed on the substrate; Be formed on the island source electrode and the drain electrode of resilient coating top; Be formed on the organic semiconductor layer of the resilient coating top that is formed with source electrode and drain electrode; Be formed on the gate insulation layer on the organic semiconductor layer; Overlapping and be formed on grid on the gate insulation layer with source electrode and drain electrode; Be formed on first adhesive layer between described source electrode and drain electrode and the described resilient coating with water-wet behavior; And be formed on second adhesive layer between described organic semiconductor layer and the described resilient coating with hydrophobic property, wherein by first adhesive layer between described source electrode and the drain electrode being carried out second plasma treatment or by mold is contacted described second adhesive layer of formation with the predetermined portions of this first adhesive layer with hydrophobic property.
In another aspect of this invention, a kind of method that is used to make OTFT is included in and forms grid on the substrate; On the whole surface of the substrate that is formed with this grid, form gate insulation layer; This gate insulation layer is carried out first plasma treatment has water-wet behavior with formation first adhesive layer; On this first adhesive layer, form source electrode and drain electrode; First adhesive layer between source electrode and drain electrode is carried out second plasma treatment has hydrophobic property with formation second adhesive layer; And in described second adhesive layer and described source electrode and drain electrode, form organic semiconductor layer.
In another aspect of this invention, a kind of method that is used to make OTFT is included in and forms resilient coating on the substrate; Form first adhesive layer by resilient coating being carried out first plasma treatment with water-wet behavior; On this first adhesive layer, form source electrode and drain electrode; First adhesive layer between source electrode and drain electrode is carried out second plasma treatment has hydrophobic property with formation second adhesive layer; And order forms organic semiconductor layer and gate insulation layer in described second adhesive layer and described source electrode and drain electrode; And on this gate insulation layer, form grid.
In another aspect of this invention, a kind of method that is used to make OTFT is included in and forms grid on the substrate; On the whole surface that comprises the substrate that is formed with grid, form gate insulation layer; This gate insulation layer is carried out first plasma treatment has water-wet behavior with formation first adhesive layer; By being contacted with the predetermined portions of this first adhesive layer, mold forms second adhesive layer with hydrophobic property; On this first adhesive layer, form source electrode and drain electrode; On described source electrode and the drain electrode and second adhesive layer, form organic semiconductor layer.
In another aspect of this invention, a kind of method that is used to make OTFT is included in and forms resilient coating on the substrate; Form first adhesive layer by resilient coating being carried out first plasma treatment with water-wet behavior; By being contacted with the predetermined portions of this first adhesive layer, mold forms second adhesive layer with hydrophobic property; On this first adhesive layer, form source electrode and drain electrode; On described source electrode and the drain electrode and second adhesive layer, form organic semiconductor layer; And on organic semiconductor layer, form gate insulation layer and grid.
Should be appreciated that top all is exemplary and indicative to general introduction of the present invention and following detailed explanation, and is intended to provide the of the present invention further explanation to claimed.
Description of drawings
Included accompanying drawing is used to provide to further understanding of the present invention, and is included in a part that constitutes specification in the specification, and accompanying drawing has been described embodiments of the present invention and has been used from explanation principle of the present invention with specification one.In the accompanying drawings:
Figure 1 shows that sectional view according to the prior art OTFT;
Fig. 2 A and 2B are depicted as the photo of prior art organic semiconductor layer crystal structure;
Fig. 3 A is depicted as the sectional view that is used to make according to the OTFT method of first embodiment of the invention to 3D;
Figure 4 shows that the sectional view of employing according to the LCD device of the OTFT of first embodiment of the invention;
Fig. 5 A is depicted as the sectional view that is used to make according to the OTFT method of second embodiment of the invention to 5D;
Figure 6 shows that the sectional view of employing according to the LCD device of the OTFT of second embodiment of the invention;
Fig. 7 A is depicted as the sectional view that is used to make according to the OTFT method of third embodiment of the invention to 7D;
Figure 8 shows that the sectional view of employing according to the LCD device of the OTFT of third embodiment of the invention;
Fig. 9 A is depicted as the sectional view that is used to make according to the OTFT method of four embodiment of the invention to 9D;
Figure 10 shows that the sectional view of employing according to the LCD device of the OTFT of four embodiment of the invention.
Embodiment
Below the embodiment shown in detail with reference to the accompanying drawings embodiments of the present invention are described.As much as possible, in whole accompanying drawing, use identical Reference numeral for identical or similar parts.
The method that is used to make according to the OTFT of preferred implementation of the present invention is described hereinafter with reference to accompanying drawing.
Fig. 3 A is depicted as the sectional view that is used to make according to the OTFT method of first embodiment of the invention to 3D.Figure 4 shows that the sectional view of employing according to the LCD device of the OTFT of first embodiment of the invention;
Shown in Fig. 3 D, comprise according to the OTFT of first embodiment of the invention being formed on the grid 112 that constitutes by metal material on the substrate 110; Be formed on the whole lip-deep gate insulation layer 114 of the substrate 110 that comprises this grid 112; Be formed on the gate insulation layer 114 and the source electrode 116a and the drain electrode 116b that by metal material constitute overlapping with the two edges of grid 112; Be formed on the gate insulation layer 114 that comprises source electrode 116a and drain electrode 116b and the organic semiconductor layer 120 that forms by polycrystalline polyfluoro block copolymer (LCPBC), pentacene or polythiophene; Be formed on the hydrophilic binder layer 114a in the contact area between gate insulation layer 114 and the source/drain 116a/116b; Be formed on corresponding to the hydrophobic adhesive layer 114b in the channel region in the contact area between organic semiconductor layer 120 and the gate insulation layer 114.
Form hydrophilic binder layer 114a in the contact area between gate insulation layer 114 and source/drain 116a/116b, thereby improve adhesion characteristic. in addition, on the gate insulation layer 114 that comprises hydrophobic adhesive layer 114b, form organic semiconductor layer 120. therefore, the crystallite dimension of organic semiconductor layer increases, and the grain boundary as the charge-trapping position reduces, thereby has improved the electrology characteristic of organic semiconductor layer.
Below, will the OTFT method that be used to make according to first embodiment of the invention be described.
At first, as shown in Figure 3A, deposit metallic material on the substrate 110 that constitutes by glass or transparent plastic, then by photoetching to its composition, thereby form grid 112.This grid 112 can be formed by any one Low ESR metal material, and for example, one of chromium (Cr), copper (Cu), molybdenum (Mo), aluminium (Al), aluminium alloy and tungsten (W) are wherein any or can be formed by the alloy of described metal.
Afterwards, on the whole surface of the substrate 100 that comprises grid 112, apply organic insulating material, thereby form gate insulation layer 114.Gate insulation layer 114 is formed by organic insulating material, for example benzocyclobutene (BCB), acrylic based material or polyimides.Then, gate insulation layer 114 is carried out first plasma treatment, thereby form hydrophilic binder layer 114a on the surface of gate insulation layer 114.This first plasma treatment can adopt O 2, H 2, He, SF 6Perhaps CF 4Perhaps adopt the mixed gas of these gases.
Shown in Fig. 3 B, on hydrophilic binder layer 114a, form metal level, and on this metal level, apply photoresist.Photoresist top be provided with have the photomask of predetermined pattern after, by to its irradiates light, exposure and development, thus this photoresist 118 of composition.After this, the photoresist by adopting composition is as mask selective etch metal level, thereby forms source/drain 116a/116b.Source/drain 116a/116b can be formed by any one Low ESR metal material, and for example, one of chromium (Cr), copper (Cu), molybdenum (Mo), aluminium (Al) and aluminium alloy are wherein any or can be formed by the alloy of described metal.
The hydrophilic binder layer 114a that forms by first plasma treatment improved the gate insulation layer 114 that constitutes by organic material and the source/drain 116a/116b that constitutes by the metal level of inorganic material between bonding strength.
Shown in Fig. 3 C, second plasma treatment is carried out on the whole surface of substrate 100 with the photoresist 118 that is positioned on the source/drain 116a/116b.Therefore, will change into hydrophobic adhesive layer 114b by the hydrophilic binder layer 114a that photoresist 118 exposes, and keep hydrophilic binder layer 114a in the contact portion between gate insulation layer 114 and source/drain 116a/116b.Second plasma treatment adopts O 2And CF 2Mixed gas.
Shown in Fig. 3 D, behind the photoresist 118 of removing composition, depositing organic material on the whole surface of the substrate 110 that comprises source/drain 116a/116b, thus then its composition is formed organic semiconductor layer 120.Therefore, finish this OTFT.The organic material of organic semiconductor layer can adopt polyfluoro block copolymer (LCPBC), pentacene or polythiophene.
When forming organic semiconductor layer 120 on the gate insulation layer 114 that comprises hydrophobic adhesive layer 114b, the crystallite dimension of organic semiconductor layer increases, and reduces as the grain boundary of charge-trapping position, thereby has improved the electrology characteristic of organic semiconductor layer.
As shown in Figure 4, the LCD device that has according to the OTFT of first embodiment of the invention comprises passivation layer 122 and pixel electrode 124.Here, form passivation layer 122 on the substrate 110 that comprises aforesaid OTFT, wherein passivation layer 122 is formed by the organic insulating material such as BCB, acrylic based material or polyimides.In addition, pixel electrode 124 is connected with drain electrode 116b by contact hole 119.Form pixel electrode 124 in the pixel region of passivation layer 122, wherein this pixel electrode 124 is formed by tin indium oxide (ITO) or indium zinc oxide (IZO).
In addition, being oppositely arranged upper substrate 132, and this upper substrate 132 is adhered on the infrabasal plate 110 with infrabasal plate 110. upper substrate 132 comprises and prevents that light from leaking into the black matrix 130 of the part except that pixel region; The color filter layer 128 of Show Color; And public electrode 126. infrabasal plates and the upper substrate that are used to drive pixel are bonded to one another with predetermined space, and form liquid crystal layer 131. in the predetermined space between infrabasal plate and upper substrate
OTFT according to first embodiment of the invention is a bottom grating structure.OTFT according to second embodiment of the invention is a top gate structure.
Fig. 5 A is depicted as the sectional view that is used to make according to the OTFT method of second embodiment of the invention to 5D.Figure 6 shows that the sectional view of employing according to the LCD device of the OTFT of second embodiment of the invention.
Shown in Fig. 5 D, comprise according to the OTFT of second embodiment of the invention being formed on the resilient coating 212 that constitutes by organic material on the substrate 210; The island source/drain 214a/214b that constitutes by metal material that on resilient coating 212, forms; Be formed on the organic semiconductor layer 216 on source/drain 214a/214b and the resilient coating 212, and this organic semiconductor layer 216 is formed by polycrystalline polyfluoro block copolymer (LCPBC), pentacene or polythiophene; The gate insulation layer 218 that on organic semiconductor layer 216, forms; Be formed on the gate insulation layer 218 and the grid 220 overlapping with source/drain 214a/214b; Be formed on the hydrophilic binder layer 212a in the contact area between resilient coating 212 and the source/drain 214a/214b; And be formed on hydrophobic adhesive layer 212b corresponding to the channel region in the contact area between resilient coating 212 and the organic semiconductor layer 216.
Form hydrophilic binder layer 212a in the contact area between resilient coating 212 and source/drain 214a/214b, thereby improve adhesion characteristic.In addition, on the resilient coating 212 that comprises hydrophobic adhesive layer 212b, form organic semiconductor layer 216.Therefore, the crystallite dimension of organic semiconductor layer increases, and reduces as the grain boundary of charge-trapping position, thereby has improved the electrology characteristic of organic semiconductor layer.
Below will the OTFT method that be used to make according to second embodiment of the invention be described.
At first, shown in Fig. 5 A, on the substrate 210 that constitutes by glass or transparent plastic, form resilient coating 212.Deposition resilient coating 212 is to improve the crystal growth of organic semiconductor layer.Resilient coating 212 can be formed by organic insulating material, for example benzocyclobutene (BCB), acrylic based material or polyimides.Then, resilient coating 212 is carried out first plasma treatment, thereby on the surface of resilient coating 212, form hydrophilic binder layer 212a.This first plasma treatment can adopt O 2, H 2, He, SF 6Perhaps CF 4Perhaps adopt the mixed gas of these gases.
Shown in Fig. 5 B, on hydrophilic binder layer 212a, form metal level, and on this metal level, apply photoresist.Photoresist top be provided with have the photomask of predetermined pattern after, by to its irradiates light, exposure and development, thus this photoresist 216 of composition.After this, by adopting photoresist behind the composition, thereby form source/drain 214a/214b as mask selective etch metal level.Source/drain 214a/214b can be formed by any one Low ESR metal material, for example, chromium (Cr), copper (Cu), molybdenum (Mo), aluminium (Al), aluminium alloy arbitrarily one of them or can form by the alloy that described metal constitutes.The hydrophilic binder layer 212a that forms by first plasma treatment improved the resilient coating 212 that constitutes by organic material and the source/drain 214a/214b that constitutes by the metal level of inorganic material between bonding strength.
Then, shown in Fig. 5 C, second plasma treatment is carried out on the whole surface of the substrate of the photoresist of tool composition.Therefore, the hydrophilic binder layer 212a that will expose by the photoresist 216 of composition changes into hydrophobic adhesive layer 212b, and keeps hydrophilic binder layer 212a in the contact portion between resilient coating 212 and source/drain 214a/214b.Second plasma treatment adopts O 2And CF 2Mixed gas.
Shown in Fig. 5 D, behind the photoresist 216 of removing composition, depositing organic material on the whole surface of the substrate that comprises source/drain 214a/214b, thus then its composition is formed organic semiconductor layer 217.The organic material of organic semiconductor layer 217 can adopt polyfluoro block copolymer (LCPBC), pentacene or polythiophene.
When on the resilient coating 212 that comprises hydrophobic adhesive layer 212b, forming organic semiconductor layer 217, the crystallite dimension that is defined as the organic semiconductor layer of channel region increases, and the grain boundary as the charge-trapping position reduces, thereby has improved the electrology characteristic of organic semiconductor layer.
Then, by forming gate insulation layer 218 at deposition inorganic insulating material on the organic semiconductor layer 217 or by coating organic insulating material on organic semiconductor layer 217.Gate insulation layer 218 can be formed by the inorganic insulating material such as silica (SiOx) or silicon nitride (SiNx), perhaps can be formed by the organic insulating material such as benzocyclobutene (BCB), acrylic based material or polyimides.In order between gate insulation layer 218 and organic semiconductor layer, to obtain good bonding strength, be preferably formed the gate insulation layer 218 that constitutes by organic insulating material.
Then, deposit metallic material on gate insulation layer 218 is carried out composition by photoetching to it, thereby forms and the overlapping grid 220 of source/drain 214a/214b.Thereby, finish this OTFT.Grid 220 can be formed by the metal material such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminium (Al), aluminium alloy and tungsten (W) or can be formed by the alloy that described metal constitutes.
As shown in Figure 6, the LCD device that has according to the OTFT of second embodiment of the invention comprises passivation layer 222 and pixel electrode 224.Here, form passivation layer 222 on the substrate 210 of OTFT as mentioned above comprising, wherein passivation layer 222 is formed by the organic insulating material such as BCB, acrylic based material or polyimides.In addition, pixel electrode 224 is connected with drain electrode 214b by contact hole 219.Form pixel electrode 224 in the pixel region of passivation layer 222, wherein this pixel electrode 224 is formed by tin indium oxide (ITO) or indium zinc oxide (IZO).
In addition, be oppositely arranged upper substrate 232, and this upper substrate 232 is adhered on the infrabasal plate 210 with infrabasal plate 210.Upper substrate 232 comprises and prevents that light from leaking into the black matrix 230 of the part except that pixel region; The color filter layer 228 of Show Color; And the public electrode 226 that is used to drive pixel.Infrabasal plate and upper substrate are bonded to one another with predetermined space, and form liquid crystal layer 231 in the predetermined space between infrabasal plate and upper substrate.
Fig. 7 A is depicted as the sectional view that is used to make according to the OTFT method of third embodiment of the invention to 7D.Figure 8 shows that the sectional view of employing according to the LCD device of the OTFT of third embodiment of the invention.
Shown in Fig. 7 D, comprise according to the OTFT of third embodiment of the invention being formed on the grid 412 that constitutes by metal material on the substrate 410; Be formed on the whole lip-deep gate insulation layer 414 of the substrate 410 that comprises this grid 412; Be formed on the gate insulation layer 414 and the source electrode 416a and the drain electrode 416b that by metal material constitute overlapping with the two edges of grid 412; Be formed on the gate insulation layer 414 that comprises source electrode 416a and drain electrode 416b and the organic semiconductor layer 420 that forms by polycrystalline polyfluoro block copolymer (LCPBC), pentacene or polythiophene; Be formed on the hydrophilic binder layer 414a in the contact area between gate insulation layer 414 and the source/drain 416a/416b; Form the hydrophobic adhesive layer 414b in the contact area between organic semiconductor layer 420 and the gate insulation layer 414.
Form hydrophilic binder layer 414a in the contact area between gate insulation layer 414 and source/drain 416a/416b, thereby improve adhesion characteristic.In addition, on the gate insulation layer 414 that comprises hydrophobic adhesive layer 414b, form organic semiconductor layer 420.Therefore, the crystallite dimension of organic semiconductor layer increases, and reduces as the grain boundary of charge-trapping position, thereby has improved the electrology characteristic of organic semiconductor layer.
Below will the OTFT method that be used to make according to third embodiment of the invention be described.
At first, shown in Fig. 7 A, deposit metallic material on the substrate 410 that constitutes by glass or transparent plastic, then by photoetching to its composition, thereby forming grid 412. these grids 412 can be formed by any one Low ESR metal material, for example, chromium (Cr), copper (Cu), molybdenum (Mo), aluminium (Al), one of aluminium alloy and tungsten (W) are wherein any or can be formed by the alloy that described metal constitutes. then, on the whole surface of the substrate 400 that comprises grid 412, apply organic insulating material, thereby forming gate insulation layer 414. gate insulation layers 414 is formed by organic insulating material, benzocyclobutene (BCB) for example, acrylic based material or polyimides. then, gate insulation layer 414 is carried out first plasma treatment, can adopt O thereby form this first plasma treatment of hydrophilic binder layer 414a. on the surface of gate insulation layer 414 2, H 2, He, SF 6Perhaps CF 4Perhaps adopt the mixed gas of these gases.
Shown in Fig. 7 B, mold 415 contacts with the predetermined portions of hydrophilic binder layer 414a, thereby makes this contact portion become hydrophobic adhesive layer 414b.Here, mold 415 can be formed by the heat proof material that comprises dimethyl silicone polymer (PDMS) by additional step.Detailed says, exerts pressure under mold 415 that will comprise PDMS and hydrophilic binder layer 414a state of contact.Therefore, by from the terminal group of surf zone, separating " OH group " contact portion between mold 415 and the hydrophilic binder layer 414a is changed into hydrophobic region.Thereby the hydrophilic binder layer 414a that contacts with mold 415 is changed and is hydrophobic adhesive layer 414b.Therefore, adhesive layer is made of hydrophilic binder layer 414a and hydrophobic adhesive layer 414b.
Shown in Fig. 7 C, after removing mold 415, on the gate insulation layer 414 that comprises hydrophilic binder layer 414a and hydrophobic adhesive layer 414b, form metal level.Then, coating photoresist (not shown) on metal level.After this, the mask with predetermined pattern, irradiates light, exposure and development then, thereby this photoresist of composition are set on photoresist top.Photoresist by adopting this composition is as mask, thereby the selective etch metal level forms source/drain 416a/416b on hydrophilic binder layer 414a.
Source/drain 416a/416b can be formed by any one Low ESR metal material, for example, and chromium (Cr), molybdenum (Mo), aluminium (Al), aluminium alloy or can form by the alloy that described metal constitutes.The hydrophilic binder layer 414a that forms by first plasma treatment improved the gate insulation layer 414 that is made of organic material and the bonding strength between the source/drain 416a/416b.
Shown in Fig. 7 D, on the whole surface of the gate insulation layer 414 that comprises source/drain 416a/416b and hydrophobic adhesive layer 414b, apply organic material, then to its composition forming organic semiconductor layer 420, thereby finish OTFT.The organic material that is used for organic semiconductor layer can adopt polyfluoro block copolymer (LCPBC), pentacene or polythiophene.
Like this, on comprising, form organic semiconductor layer 420 by the gate insulation layer 414 that contacts the hydrophobic adhesive layer 414b that forms with mold 415.Therefore, the crystallite dimension of organic semiconductor layer increases, and reduces as the grain boundary of charge-trapping position, thereby has improved the electrology characteristic of organic semiconductor layer.
As shown in Figure 8, the LCD device that has according to the OTFT of third embodiment of the invention comprises passivation layer 422 and pixel electrode 424.Here, form passivation layer 422 on the substrate 410 of OTFT as mentioned above comprising, wherein passivation layer 422 is formed by the organic insulating material such as BCB, acrylic based material or polyimides.In addition, pixel electrode 424 is connected with drain electrode 416b by contact hole 419.Form pixel electrode 424 in the pixel region of passivation layer 422, wherein this pixel electrode 424 is formed by tin indium oxide (ITO) or indium zinc oxide (IZO).
In addition, be oppositely arranged upper substrate 432, and this upper substrate 432 is adhered on the infrabasal plate 410 with infrabasal plate 410.Upper substrate 432 comprises and prevents that light from leaking into the black matrix 430 of the part except that pixel region; The color filter layer 428 of Show Color; And the public electrode 426 that is used to drive pixel.Infrabasal plate and upper substrate are bonded to one another with predetermined space, and form liquid crystal layer 431 in the predetermined space between infrabasal plate and upper substrate.
OTFT according to third embodiment of the invention is a bottom grating structure.OTFT according to four embodiment of the invention is a top gate structure.
Fig. 9 A is depicted as the sectional view that is used to make according to the OTFT method of four embodiment of the invention to 9D.Figure 10 shows that the sectional view of employing according to the LCD device of the OTFT of four embodiment of the invention.
Shown in Fig. 9 D, comprise according to the OTFT of four embodiment of the invention being formed on the resilient coating 512 that constitutes by organic material on the substrate 510; The island source/drain 514a/514b that constitutes by metal material that on resilient coating 512, forms; Be formed on the organic semiconductor layer 516 on source/drain 514a/514b and the resilient coating 512, and this organic semiconductor layer 516 is formed by polycrystalline polyfluoro block copolymer (LCPBC), pentacene or polythiophene; The gate insulation layer 518 that on organic semiconductor layer 516, forms; Be formed on the gate insulation layer 518 and the grid 520 overlapping with source/drain 514a/514b; Be formed on the hydrophilic binder layer 512a in the contact area between resilient coating 512 and the source/drain 514a/514b; And be formed on corresponding to the hydrophobic adhesive layer 512b. in the channel region of the contact area between resilient coating 512 and the organic semiconductor layer 516
Between resilient coating 512 and source/drain 514a/514b, form hydrophilic binder layer 512a, thereby improve adhesion characteristic.In addition, on the resilient coating 512 that comprises hydrophobic adhesive layer 512b, form organic semiconductor layer 516.Therefore, the crystallite dimension of organic semiconductor layer increases, and reduces as the grain boundary of charge-trapping position, thereby has improved the electrology characteristic of organic semiconductor layer.
Below will the OTFT method that be used to make according to four embodiment of the invention be described.
At first, shown in Fig. 9 A, on the substrate 510 that constitutes by glass or transparent plastic, form resilient coating 512.Deposition resilient coating 512 is to improve the crystal growth of organic semiconductor layer.Resilient coating 512 can be formed by organic insulating material, for example benzocyclobutene (BCB), acrylic based material or polyimides.Then, resilient coating 512 is carried out first plasma treatment, thereby on the surface of resilient coating 512, form hydrophilic binder layer 512a.This first plasma treatment can adopt O 2, H 2, He, SF 6Perhaps CF 4Perhaps adopt the mixed gas of these gases.
Shown in Fig. 9 B, mold 513 contacts with the predetermined portions of hydrophilic binder layer 512a, thereby makes this contact portion become hydrophobic adhesive layer 512b.Here, mold 513 can be formed by the heat proof material that comprises dimethyl silicone polymer (PDMS) by additional step.Detailed says, exerts pressure under mold 513 that will comprise PDMS and hydrophilic binder layer 512a state of contact.Therefore, by from the group of surf zone, separating " OH group " contact portion between mold 513 and the hydrophilic binder layer 512a is changed into hydrophobic region.Thereby the hydrophilic binder layer 512a that contacts with mold 513 changes into hydrophobic adhesive layer 512b.Therefore, adhesive layer is made of hydrophilic binder layer 512a and hydrophobic adhesive layer 512b.
Shown in Fig. 9 C, after removing mold 513, on the resilient coating 512 that comprises hydrophilic binder layer 512a and hydrophobic adhesive layer 512b, form metal level.Then, coating photoresist (not shown) on metal level.After this, the photomask with predetermined pattern, irradiates light, exposure and development then, thereby this photoresist of composition are set above photoresist.Photoresist by adopting this composition is as mask, thereby the selective etch metal level forms source/drain 514a/514b on hydrophilic binder layer 512a.
Here, source/drain can be formed by any one Low ESR metal material, for example, and chromium (Cr), molybdenum (Mo), aluminium (Al), aluminium alloy or can form by the alloy that described metal constitutes.The hydrophilic binder layer 512a that forms by first plasma treatment improved the resilient coating 512 that is made of organic material and the bonding strength between the source/drain 514a/514b.
Shown in Fig. 9 D, on the whole surface of the resilient coating 512 that comprises source/drain 514a/514b and hydrophobic adhesive layer 512b, apply organic material, then to its composition to form organic semiconductor layer 516.The organic material of organic semiconductor layer can adopt polyfluoro block copolymer (LCPBC), pentacene or polythiophene.
Like this, comprising by contact formation organic semiconductor layer 516 on the hydrophobic adhesive layer 512b that forms with mold 513.Therefore, the crystallite dimension of organic semiconductor layer increases, and reduces as the grain boundary of charge-trapping position, thereby has improved the electrology characteristic of organic semiconductor layer.
By on organic semiconductor layer 516, forming gate insulation layer 518, wherein gate insulation layer 518 can be formed by inorganic or organic insulating material. and gate insulation layer 518 can be formed by the inorganic insulating material such as silica (SiOx) or silicon nitride (SiNx), perhaps can form by organic insulating material such as benzocyclobutene (BCB), acrylic based material or polyimides. in order between gate insulation layer 518 and organic semiconductor layer, to obtain good bonding strength, be preferably formed the gate insulation layer 518. that constitutes by organic insulating material
Then, deposit metallic material on gate insulation layer 518 is carried out composition by photoetching to it, thereby forms and the overlapping grid 520 of source/drain 514a/514b.Thereby, finish this OTFT.
Grid 520 can be formed by the metal material such as chromium (Cr), copper (Cu), molybdenum (Mo), aluminium (Al), aluminium alloy and tungsten (W) or can be formed by the alloy that described metal constitutes.
As shown in figure 10, the LCD device that has according to the OTFT of four embodiment of the invention comprises passivation layer 522 and pixel electrode 524.Here, form passivation layer 522 on the substrate 510 of OTFT as mentioned above comprising, wherein passivation layer 522 is formed by the organic insulating material such as BCB, acrylic based material or polyimides.In addition, pixel electrode 524 is connected with drain electrode 514b by contact hole 519.Form pixel electrode 524 in the pixel region of passivation layer 522, wherein this pixel electrode 524 is formed by tin indium oxide (ITO) or indium zinc oxide (IZO).
In addition, be oppositely arranged upper substrate 532, and this upper substrate 532 is adhered on the infrabasal plate 510 with infrabasal plate 510.Upper substrate 532 comprises and prevents that light from leaking into the black matrix 530 of the part except that pixel region; The color filter layer 528 of Show Color; And the public electrode 526 that is used to drive pixel.Infrabasal plate and upper substrate are bonded to one another with predetermined space, and form liquid crystal layer 531 in the predetermined space between infrabasal plate and upper substrate.
In OTFT according to the present invention and manufacture method thereof, on the insulating barrier that the organic material of changing into hydrophobic property constitutes, form organic semiconductor layer.Therefore, the crystallite dimension of organic semiconductor layer increases, and reduces as the grain boundary of charge-trapping position, thereby has improved the electrology characteristic of organic semiconductor layer.
For OTFT according to the present invention, the hydrophilic layer that forms by plasma treatment has improved the resilient coating that is made of organic semiconductor layer and the bonding strength between the source/drain.
Obviously under the situation that does not break away from the spirit and scope of the present invention, those of ordinary skill in the art can make various modifications and variations to the present invention.Therefore, this invention is intended to cover improvement and modification within all scopes that fall into appended claims and equivalent thereof.

Claims (34)

1. OTFT comprises:
Be formed on the grid on the substrate;
Be formed on the gate insulation layer on this grid;
Overlapping and be formed on the source electrode and the drain electrode of gate insulation layer top with the grid both sides of the edge;
Be formed on the organic semiconductor layer of the gate insulation layer top that is formed with source electrode and drain electrode;
Be formed on first adhesive layer between described gate insulation layer and described source electrode and the drain electrode with water-wet behavior; And
Be formed on second adhesive layer between described organic semiconductor layer and the described gate insulation layer with hydrophobic property,
Wherein, by first adhesive layer between described source electrode and the drain electrode being carried out second plasma treatment or being formed described second adhesive layer with hydrophobic property by mold is contacted with the predetermined portions of this first adhesive layer.
2. OTFT according to claim 1 is characterized in that described gate insulation layer is formed by organic insulating material.
3. OTFT according to claim 1 is characterized in that, described organic semiconductor layer forms by polycrystalline polyfluoro block copolymer, pentacene or polythiophene are one of wherein any.
4. OTFT according to claim 1 is characterized in that, described source electrode and drain electrode are formed by the inorganic metal material.
5. OTFT according to claim 1 is characterized in that, described first adhesive layer has water-wet behavior by plasma treatment.
6. OTFT comprises:
Be formed on the resilient coating on the substrate;
Be formed on the island source electrode and the drain electrode of resilient coating top;
Be formed on the organic semiconductor layer of the resilient coating top that is formed with source electrode and drain electrode;
Be formed on the gate insulation layer on the organic semiconductor layer;
Overlapping and be formed on grid on the gate insulation layer with source electrode and drain electrode;
Be formed on first adhesive layer between described source electrode and drain electrode and the described resilient coating with water-wet behavior; And
Be formed on second adhesive layer between described organic semiconductor layer and the described resilient coating with hydrophobic property,
Wherein, by first adhesive layer between described source electrode and the drain electrode being carried out second plasma treatment or being formed described second adhesive layer with hydrophobic property by mold is contacted with the predetermined portions of this first adhesive layer.
7. OTFT according to claim 6 is characterized in that described resilient coating is formed by organic insulating material.
8. OTFT according to claim 6 is characterized in that, described organic semiconductor layer forms by polycrystalline polyfluoro block copolymer, pentacene or polythiophene are one of wherein any.
9. OTFT according to claim 6 is characterized in that, described source electrode and drain electrode are formed by the inorganic metal material.
10. OTFT according to claim 6 is characterized in that, described first adhesive layer has water-wet behavior by plasma treatment.
11. a method that is used to make OTFT comprises:
On substrate, form grid;
On the whole surface of the substrate that is formed with this grid, form gate insulation layer;
This gate insulation layer is carried out first plasma treatment has water-wet behavior with formation first adhesive layer;
On this first adhesive layer, form source electrode and drain electrode;
First adhesive layer between source electrode and drain electrode is carried out second plasma treatment has hydrophobic property with formation second adhesive layer; And
In described second adhesive layer and described source electrode and drain electrode, form organic semiconductor layer.
12. method according to claim 11 is characterized in that, described first plasma treatment that is used to form first adhesive layer adopts O 2, H 2, He, SF 6Perhaps CF 4Perhaps adopt the mixed gas of these gases.
13. method according to claim 11 is characterized in that, described second plasma treatment that is used to form second adhesive layer adopts O 2And CF 2Mixed gas.
14. method according to claim 11 is characterized in that, described gate insulation layer is formed by organic insulating material.
15. method according to claim 11 is characterized in that, described organic semiconductor layer is formed by polycrystalline polyfluoro block copolymer, pentacene or polythiophene.
16. method according to claim 11 is characterized in that, described source electrode and drain electrode are formed by the inorganic metal material.
17. a method that is used to make OTFT comprises:
On substrate, form resilient coating;
Form first adhesive layer by resilient coating being carried out first plasma treatment with water-wet behavior;
On this first adhesive layer, form source electrode and drain electrode;
First adhesive layer between source electrode and drain electrode is carried out second plasma treatment has hydrophobic property with formation second adhesive layer; And
Order forms organic semiconductor layer and gate insulation layer in described second adhesive layer and described source electrode and drain electrode; And
On this gate insulation layer, form grid.
18. method according to claim 17 is characterized in that, described first plasma treatment that is used to form first adhesive layer adopts O 2, H 2, He, SF 6Perhaps CF 4Perhaps adopt the mixed gas of these gases.
19. method according to claim 17 is characterized in that, described second plasma treatment that is used to form second adhesive layer adopts O 2And CF 2Mixed gas.
20. method according to claim 17 is characterized in that, described resilient coating is formed by organic insulating material.
21. method according to claim 17 is characterized in that, described organic semiconductor layer is formed by polycrystalline polyfluoro block copolymer, pentacene or polythiophene.
22. method according to claim 17 is characterized in that, described source electrode and drain electrode are formed by the inorganic metal material.
23. a method that is used to make OTFT comprises:
On substrate, form grid;
On the whole surface that comprises the substrate that is formed with grid, form gate insulation layer;
This gate insulation layer is carried out first plasma treatment has water-wet behavior with formation first adhesive layer;
By being contacted with the predetermined portions of this first adhesive layer, mold forms second adhesive layer with hydrophobic property;
On this first adhesive layer, form source electrode and drain electrode;
On described source electrode and the drain electrode and second adhesive layer, form organic semiconductor layer.
24. method according to claim 23 is characterized in that, described first plasma treatment that is used to form first adhesive layer adopts O 2, H 2, He, SF 6Perhaps CF 4Perhaps adopt the mixed gas of these gases.
25. method according to claim 23 is characterized in that, described mold is formed by the heat proof material that comprises dimethyl silicone polymer.
26. method according to claim 23 is characterized in that, described gate insulation layer is formed by organic insulating material.
27. method according to claim 23 is characterized in that, described organic semiconductor layer is formed by polycrystalline polyfluoro block copolymer, pentacene or polythiophene.
28. method according to claim 23 is characterized in that, described source electrode and drain electrode are formed by the inorganic metal material.
29. a method that is used to make OTFT comprises:
On substrate, form resilient coating;
Form first adhesive layer by resilient coating being carried out first plasma treatment with water-wet behavior;
By being contacted with the predetermined portions of this first adhesive layer, mold forms second adhesive layer with hydrophobic property;
On this first adhesive layer, form source electrode and drain electrode;
On described source electrode and the drain electrode and second adhesive layer, form organic semiconductor layer; And
On organic semiconductor layer, form gate insulation layer and grid.
30. method according to claim 29 is characterized in that, described first plasma treatment that is used to form first adhesive layer adopts O 2, H 2, He, SF 6Perhaps CF 4Perhaps adopt the mixed gas of these gases.
31. method according to claim 29 is characterized in that, described mold is formed by the heat proof material that comprises dimethyl silicone polymer.
32. method according to claim 29 is characterized in that, described resilient coating is formed by organic insulating material.
33. method according to claim 29 is characterized in that, described organic semiconductor layer is formed by polycrystalline polyfluoro block copolymer, pentacene or polythiophene.
34. method according to claim 29 is characterized in that, described source electrode and drain electrode are formed by the inorganic metal material.
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