CN102694036A - Silicon-based thin film solar cell with novel back reflection structure - Google Patents
Silicon-based thin film solar cell with novel back reflection structure Download PDFInfo
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- CN102694036A CN102694036A CN2012101858059A CN201210185805A CN102694036A CN 102694036 A CN102694036 A CN 102694036A CN 2012101858059 A CN2012101858059 A CN 2012101858059A CN 201210185805 A CN201210185805 A CN 201210185805A CN 102694036 A CN102694036 A CN 102694036A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses a silicon-based thin film solar cell with a novel back reflection structure. High short-circuit current and high photoelectric conversion efficiency are obtained. The silicon-based thin film solar cell with the novel back reflection structure comprises a back reflection thin film, a packaging backboard, a silicon-based thin film cell, a front transparent substrate and a packaging material, wherein the back reflection thin film at least comprises a layer of silver thin film or aluminum thin film or copper thin film or silver-aluminum-copper-containing alloy thin film, and can be prepared by a physical or chemical method on the packaging backboard, and a total film thickness is controlled between 10 nanometers and 1 millimeters; the silicon-based thin film cell is a thin film solar cell which is made from any silicon material or any silicon-based alloy material and has a single-junction or multi-junction structure; the back reflection thin film on the packaging backboard and the silicon-based thin film cell are synchronously and independently prepared; and the front transparent substrate of the packaging backboard and the silicon-based thin film battery is packaged by the packaging material by a laminating process. A cell preparation process is simplified, a beat is quickened, productivity is improved, and the preparation cost of the cell is lowered.
Description
Technical field
The present invention relates to the structure silicon-based thin-film solar cells of a kind of novel back reflection, belong to the silicon-based film solar cells production technical field.
Background technology
Silicon-based film solar cells since its technology maturation, environmental friendliness, preparation cost low, can be prepared on the flexible substrate, can prepare plurality of advantages such as light-transmission type battery and produced and be applied in batches BIPVs (BIPV) such as earthbound solar energy power station and photovoltaic curtain wall, power station, roof etc. widely.For the high efficiency silicon-based film solar cells, as often as possible absorb incident light and can produce high photogenerated current, sunken optical tech is most important, the most effective light regime technology, can absorb incident light effectively.Good sunken light action not only can promote battery conversion efficiency effectively, thereby and can reduce silicon thin film thickness effectively and can further reduce preparation cost.Usually, the preceding transparency conductive electrode (TCO) with surface texture can be carried out light scattering to incident light effectively, thereby can prolong incident light path, the increase light absorption of light in silicon-based film solar cells.In addition, thus the back reflection film through height reflection as metallic film such as silver, aluminium and copper and corresponding alloy firm also effectively reverberation absorbed, increase short circuit current by battery once more.
However; For metallic film and corresponding alloy firms such as aforesaid silver, aluminium, copper; Their depositing operation mainly all is on the silicon-based film solar cells for preparing, to carry out, and its depositing operation determines the characteristic and the battery efficiency of the film material of silicon-based film solar cells to a certain extent.In addition, successive sedimentation technology also affects productive temp and production capacity, has increased the preparation cost of battery to a certain extent, thereby is restricting the development of silicon-based film solar cells and the competitive strength of enterprise.The efficient of battery and preparation cost exist certain balance.
Summary of the invention
The silicon-based film solar cells that the purpose of this invention is to provide a kind of novel back reflection structure; Make the preparation of the high back reflection film that reflects and the preparation of silicon-base thin-film battery independently carry out synchronously; Through laminating technology both are encapsulated then; To improve battery efficiency effectively like this, and improve beat simultaneously, increased production capacity, reduced the preparation cost of battery, solve the problems referred to above that background technology exists.
Technical scheme of the present invention is: a kind of silicon-based film solar cells of novel back reflection structure comprises back reflection film, encapsulation backboard, silicon-base thin-film battery, transparent prebasal plate and encapsulating material; The preparation of the back reflection film on the encapsulation backboard and the preparation of silicon-base thin-film battery are independently carried out synchronously, adopt laminating technology to encapsulate through encapsulating material the transparent prebasal plate that encapsulates backboard and silicon-base thin-film battery.
Described back reflection film comprises one deck silver metal film or aluminum metal film or copper metal film at least, or contains the alloy firm of silver, aluminium, copper metal; The back reflection film is prepared on the encapsulation backboard; Film can prepare through physics or chemical method, and total film thickness monitoring is between 10 nanometers to 1 millimeter.
Described encapsulation back veneer material is glass or stainless steel or organic polymer material.
Described silicon-base thin-film battery comprises the thin-film solar cells of unijunction with many knot laminated construction of all silicon materials and silicon-base alloy material.
Described transparent prebasal plate is glass or polyester film.
Described encapsulating material is greater than 10% organic polymer material in visible region average light transmitance.
The structure silicon-based thin-film solar cells of described novel back reflection has the encapsulation backboard of back reflection film and preparation to have the transparent prebasal plate of silicon-based film solar cells to adopt encapsulating material to form through laminating technology by having preparation.
Good effect of the present invention: the preparation of the back reflection film of height reflection and the preparation of silicon-base thin-film battery are independently carried out synchronously; Through laminating technology both are encapsulated then; To improve battery efficiency effectively like this; Improved beat simultaneously, increased production capacity, simplified battery preparation technique, reduced the preparation cost of battery, and can be widely used in the actual batch commercial production.
Description of drawings
Fig. 1 is an embodiment of the invention structural representation, wherein: transparent prebasal plate 1, silicon-base thin-film battery 2, encapsulating material 3, back reflection film 4, encapsulation backboard 5;
Fig. 2 is the IV curve and corresponding contrast test figure of the embodiment of the invention one and background technology thin-film solar cells;
Fig. 3 is the IV curve and corresponding contrast test figure of the embodiment of the invention two and background technology thin-film solar cells.
Embodiment
Below in conjunction with accompanying drawing 1, the present invention is further specified through embodiment.
A kind of silicon-based film solar cells of novel back reflection structure; Comprise back reflection film (4), encapsulation backboard (5), silicon-base thin-film battery (2), transparent prebasal plate (1) and encapsulating material (3); Preparation comprises one deck silver metal film or aluminum metal film or copper metal film at least, or contains the metallic film with high reflection characteristic of the alloy firm of silver, aluminium, copper metal on the encapsulation backboard, and this metallic film is called the back reflection film; The preparation of the back reflection film on the encapsulation backboard and the preparation of silicon-base thin-film battery are independently carried out synchronously, adopt laminating technology to encapsulate through encapsulating material the transparent prebasal plate that encapsulates backboard and silicon-base thin-film battery;
Embodiment of the invention preparation method more specifically is following:
Embodiment one:
1. on the encapsulation backboard, deposit the back reflection film
(1) will encapsulate backboard and be placed in the cleaning equipment, and add cleaning agent and clean, dry up through deionized water rinsing, nitrogen successively then; The encapsulation backboard that (2) will clean is put into deposition chambers and is prepared high reflective aluminum metallic film, film thickness 200 nanometers;
2. the preparation of silicon-base thin-film battery
(1) transparent prebasal plate is placed in the cleaning equipment, adds cleaning agent and clean, dry up through deionized water rinsing, nitrogen successively then; (2) transparency electrode before the preparation; (3) using plasma strengthens chemical vapour deposition (CVD) (PECVD) method control deposition parameter, preparation amorphous silicon unijunction hull cell; (4) preparation back of the body transparency electrode;
3. the silicon-based film solar cells of novel back reflection structure is accomplished in preparation
Above-mentioned preparation there is the encapsulation backboard of back reflection film carry out laminating technology with the transparent prebasal plate of accomplishing the silicon-based film solar cells preparation; Adopt polyvinyl butyral resin (PVB) organic polymer encapsulating material to carry out the lamination encapsulation, draw the battery positive and negative electrode simultaneously;
4. adopt solar simulator under reference condition, the present invention to be carried out the IV test, obtain test result, with reference to accompanying drawing 2.
The IV curve and corresponding test result that have novel back reflection structure and do not have the unijunction p-i-n amorphous silicon thin-film solar cell of back reflection structure, the back reflection film that wherein encapsulates on the backboard is the aluminum metal film.
The contrast test result can find out that the battery with aluminum metal back reflection membrane structure has high short circuit current, obtains high electricity conversion.
Embodiment two,
1. on the encapsulation backboard, deposit the back reflection film
(1) will encapsulate backboard and be placed in the cleaning equipment, and add cleaning agent and clean, dry up through deionized water rinsing, nitrogen successively then; The encapsulation backboard that (2) will clean is put into deposition chambers and is prepared high reflective aluminum metallic film, film thickness 200 nanometers;
2. the preparation of silicon-base thin-film battery
(1) transparent prebasal plate is placed in the cleaning equipment, adds cleaning agent and clean, dry up through deionized water rinsing, nitrogen successively then; (2) transparency electrode before the preparation; (3) using plasma strengthens chemical vapour deposition (CVD) (PECVD) method control deposition parameter, preparation amorphous silicon/microcrystalline silicon tandem hull cell; (4) preparation back of the body transparency electrode;
3. the silicon-based film solar cells of novel back reflection structure is accomplished in preparation
Above-mentioned preparation there is the encapsulation backboard of back reflection film carry out laminating technology with the transparent prebasal plate of accomplishing the silicon-based film solar cells preparation; Adopt polyvinyl butyral resin (PVB) organic polymer encapsulating material to carry out the lamination encapsulation, draw the battery positive and negative electrode simultaneously;
4. adopt solar simulator under reference condition, the present invention to be carried out the IV test, obtain test result, with reference to accompanying drawing 3.
The IV curve and corresponding test result that have novel back reflection structure and do not have the crystalline/micro-crystalline silicon laminated thin-film solar cells of p-i-n amorphous silicon/p-i-n of back reflection structure.
The contrast test result can find out that the same with embodiment single-node amorphous silicon thin-film solar cell, the laminated cell with aluminum metal back reflection membrane structure obtains high short circuit current and high electricity conversion.
Claims (7)
1. the silicon-based film solar cells of a novel back reflection structure is characterized in that: comprise back reflection film (4), encapsulation backboard (5), silicon-base thin-film battery (2), transparent prebasal plate (1) and encapsulating material (3).
2. according to the silicon-based film solar cells of the said a kind of novel back reflection structure of claim 1; It is characterized in that described back reflection film (4) comprises one deck silver metal film or aluminum metal film or copper metal film at least, or contains the alloy firm of silver, aluminium, copper metal; The back reflection film is prepared on the encapsulation backboard, and total film thickness monitoring is between 10 nanometers to 1 millimeter.
3. according to the silicon-based film solar cells of claim 1 or 2 said a kind of novel back reflection structures, it is characterized in that described encapsulation backboard (5) material is glass or stainless steel or organic polymer material.
4. according to the silicon-based film solar cells of claim 1 or 2 said a kind of novel back reflection structures, it is characterized in that described silicon-base thin-film battery (2) comprises the thin-film solar cells of unijunction with many knot laminated construction of all silicon materials and silicon-base alloy material.
5. be characterised in that according to the silicon-based film solar cells of claim 1 or 2 said a kind of novel back reflection structures is dear described transparent prebasal plate (1) material is glass or polyester film.
6. according to the silicon-based film solar cells of claim 1 or 2 said a kind of novel back reflection structures, it is characterized in that described encapsulating material (1) in visible region average light transmitance greater than 10% organic polymer material.
7. according to the silicon-based film solar cells of claim 1 or 2 said a kind of novel back reflection structures; It is characterized in that described silicon-based film solar cells, is that preparation has the encapsulation backboard of back reflection film and preparation to have the transparent prebasal plate of silicon-based film solar cells to adopt encapsulating material to form the structure silicon-based thin-film solar cells of novel back reflection through laminating technology.
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| CN2012101858059A CN102694036A (en) | 2012-06-07 | 2012-06-07 | Silicon-based thin film solar cell with novel back reflection structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246914A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Back reflection layer of thin-film solar cell |
| CN101924153A (en) * | 2010-03-02 | 2010-12-22 | 新奥光伏能源有限公司 | Thin film solar cell and manufacture method thereof |
| US20110139232A1 (en) * | 2010-02-10 | 2011-06-16 | Suntae Hwang | Silicon thin film solar cell |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246914A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Back reflection layer of thin-film solar cell |
| US20110139232A1 (en) * | 2010-02-10 | 2011-06-16 | Suntae Hwang | Silicon thin film solar cell |
| CN101924153A (en) * | 2010-03-02 | 2010-12-22 | 新奥光伏能源有限公司 | Thin film solar cell and manufacture method thereof |
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Application publication date: 20120926 |