CN102694080A - Novel titanium dioxide back reflection structure silicon substrate thin-film solar cell - Google Patents
Novel titanium dioxide back reflection structure silicon substrate thin-film solar cell Download PDFInfo
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- CN102694080A CN102694080A CN2012101992503A CN201210199250A CN102694080A CN 102694080 A CN102694080 A CN 102694080A CN 2012101992503 A CN2012101992503 A CN 2012101992503A CN 201210199250 A CN201210199250 A CN 201210199250A CN 102694080 A CN102694080 A CN 102694080A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a novel titanium dioxide back reflection structure silicon substrate thin-film solar cell, and belongs to the technical field of silicon substrate thin-film solar cell production. The technical scheme adopted by the invention is as follows: the solar cell comprises a titanium dioxide back reflection thin film (4), an encapsulation back plate (5), a silicon substrate thin film cell (2), a transparent front substrate (1) and an encapsulating material (3); and preparation of the titanium dioxide back reflection thin film and preparation of the silicon substrate thin film cell on the encapsulation back plate are synchronously and independently carried out, and then the encapsulation back plate and the transparent front substrate of the silicon substrate thin film cell are encapsulated by adopting a laminating technique by virtue of the encapsulating material. The novel titanium dioxide back reflection structure silicon substrate thin-film solar cell disclosed by the invention has the positive effects that the preparation of the high-reflection titanium dioxide back reflection thin film and the preparation of the silicon substrate thin film cell are synchronously independently carried out, and then the high-reflection titanium dioxide back reflection thin film and the silicon substrate thin film cell are encapsulated by adopting the laminating technique, so that the cell efficiency is effectively improved, the pace of production is accelerated, the capacity is improved, the preparation process of the cell is simplified, the preparation cost of the cell is lowered, and the novel titanium dioxide back reflection structure silicon substrate thin-film solar cell disclosed by the invention can be widely applied to the practical batch industrial production...
Description
Technical field
The present invention relates to the structure silicon-based thin-film solar cells of a kind of Novel Titanium dioxide back reflection, belong to the silicon-based film solar cells production technical field.
Background technology
Silicon-based film solar cells since its technology maturation, environmental friendliness, preparation cost low, can be prepared on the flexible substrate, can prepare plurality of advantages such as light-transmission type battery and produced and be applied in batches BIPVs (BIPV) such as earthbound solar energy power station and photovoltaic curtain wall, power station, roof etc. widely.For the high efficiency silicon-based film solar cells, as often as possible absorb incident light and can produce high photogenerated current, sunken optical tech is most important, the most effective light regime technology, can make silicon-based film solar cells absorb incident light effectively.Deposition one deck back of the body titanium dioxide (TiO on the back of the body transparency electrode of silicon-based film solar cells structure
2) thereby film can reflect incident light equally effectively increases photoelectric current effectively, improves the conversion efficiency of battery.The efficient of battery and preparation cost exist certain balance; For aforesaid titanium deoxid film with reflection characteristic; Their depositing operation mainly all is on the silicon-based film solar cells for preparing, to carry out, and its depositing operation determines the characteristic and the battery efficiency of the film material of silicon-based film solar cells to a certain extent.In addition, successive sedimentation technology also affects productive temp and production capacity, has increased the preparation cost of battery to a certain extent, thereby is restricting the development of silicon-based film solar cells and the competitive strength of enterprise.
Summary of the invention
The purpose of this invention is to provide the structure silicon-based thin-film solar cells of a kind of Novel Titanium dioxide back reflection; Make the preparation of the high titanium dioxide back reflection film that reflects and the preparation of silicon-base thin-film battery independently carry out synchronously; Through laminating technology both are encapsulated then; To improve battery efficiency effectively like this, and improve beat simultaneously, increased production capacity, reduced the preparation cost of battery, solve the problems referred to above that background technology exists.
Technical scheme of the present invention is: the structure silicon-based thin-film solar cells of a kind of Novel Titanium dioxide back reflection comprises titanium dioxide back reflection film, encapsulation backboard, silicon-base thin-film battery, transparent prebasal plate and encapsulating material; The preparation of titanium dioxide back reflection film and the preparation of silicon-base thin-film battery are independently carried out synchronously on the encapsulation backboard, then, adopt laminating technology to encapsulate through encapsulating material the transparent prebasal plate that encapsulates backboard and silicon-base thin-film battery.
Described titanium dioxide back reflection film comprises the layer of titanium dioxide film at least, is prepared on the encapsulation backboard, and the film thickness monitoring of back reflection film is between 100 nanometers to 500 micron.
Described encapsulation back veneer material is glass or stainless steel or organic polymer material.
Described silicon-base thin-film battery is a silicon-based film solar cells, comprises the thin-film solar cells of unijunction with many knot laminated construction of all silicon materials and silicon-base alloy material.
Described transparent prebasal plate is glass or polyester film.
Described encapsulating material is greater than 10% organic polymer material in visible region average light transmitance.
Good effect of the present invention: the preparation of the titanium dioxide back reflection film of height reflection and the preparation of silicon-base thin-film battery are independently carried out synchronously; Through laminating technology both are encapsulated then; To improve battery efficiency effectively like this; Improved beat simultaneously, increased production capacity, simplified battery preparation technique, reduced the preparation cost of battery, and can be widely used in the actual batch commercial production.
Description of drawings
Fig. 1 is an embodiment of the invention structural representation;
Among the figure: transparent prebasal plate 1, silicon-base thin-film battery 2, encapsulating material 3, titanium dioxide back reflection film 4, encapsulation backboard 5.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further specified through embodiment.
The structure silicon-based thin-film solar cells of a kind of Novel Titanium dioxide back reflection; Comprise titanium dioxide back reflection film (4), encapsulation backboard (5), silicon-base thin-film battery (2), transparent prebasal plate (1) and encapsulating material (3); Preparation comprises the layer of titanium dioxide film at least on the encapsulation backboard, is prepared on the encapsulation backboard; The preparation of the titanium dioxide back reflection film on the encapsulation backboard and the preparation of silicon-base thin-film battery are independently carried out synchronously, adopt laminating technology to encapsulate through encapsulating material the transparent prebasal plate that encapsulates backboard and silicon-base thin-film battery.
Embodiment of the invention preparation method more specifically is following:
1. encapsulating deposition of titanium oxide back reflection film on the backboard
(1) will encapsulate backboard and be placed in the cleaning equipment, and add cleaning agent and clean, dry up through deionized water rinsing, nitrogen successively then; (2) the high reflection of preparation titanium dioxide back reflection film on the encapsulation backboard that has cleaned, film thickness monitoring is between 100 nanometers to 500 micron;
2. the preparation of silicon-base thin-film battery
(1) transparent prebasal plate is placed in the cleaning equipment, adds cleaning agent and clean, dry up through deionized water rinsing, nitrogen successively then; (2) transparency electrode before the preparation; (3) using plasma enhancing chemical vapour deposition (CVD) (PECVD) method prepares silicon-base thin-film battery; (4) preparation back of the body transparency electrode;
3. the structure silicon-based thin-film solar cells of Novel Titanium dioxide back reflection is accomplished in preparation
Above-mentioned preparation there is the encapsulation backboard of titanium dioxide back reflection film carry out laminating technology with the transparent prebasal plate of accomplishing the silicon-based film solar cells preparation; Adopt the organic polymer encapsulating material to carry out the lamination encapsulation; Draw the battery positive and negative electrode simultaneously, thereby form the structure silicon-based thin-film solar cells of Novel Titanium dioxide back reflection.
Claims (6)
1. the structure silicon-based thin-film solar cells of Novel Titanium dioxide back reflection is characterized in that: comprise titanium dioxide back reflection film (4), encapsulation backboard (5), silicon-base thin-film battery (2), transparent prebasal plate (1) and encapsulating material (3); The preparation of titanium dioxide back reflection film and the preparation of silicon-base thin-film battery are independently carried out synchronously on the encapsulation backboard, then, adopt laminating technology to encapsulate through encapsulating material the transparent prebasal plate that encapsulates backboard and silicon-base thin-film battery.
2. a kind of Novel Titanium dioxide back reflection structure silicon-based thin-film solar cells according to claim 1; It is characterized by: described titanium dioxide back reflection film comprises the layer of titanium dioxide film at least; Be prepared on the encapsulation backboard, the film thickness monitoring of back reflection film is between 100 nanometers to 500 micron.
3. according to claim 1 or 2 said structure silicon-based thin-film solar cells of a kind of Novel Titanium dioxide back reflection, it is characterized by: described encapsulation back veneer material is glass or stainless steel or organic polymer material.
4. a kind of Novel Titanium dioxide back reflection structure silicon-based thin-film solar cells according to claim 1; It is characterized by: described silicon-base thin-film battery is a silicon-based film solar cells, comprises the thin-film solar cells of unijunction with many knot laminated construction of all silicon materials and silicon-base alloy material.
5. a kind of Novel Titanium dioxide back reflection structure silicon-based thin-film solar cells according to claim 1, it is characterized by: described transparent prebasal plate is glass or polyester film.
6. a kind of Novel Titanium dioxide back reflection structure silicon-based thin-film solar cells according to claim 1 is characterized by: described encapsulating material in visible region average light transmitance greater than 10% organic polymer material.
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| CN2012101992503A CN102694080A (en) | 2012-06-18 | 2012-06-18 | Novel titanium dioxide back reflection structure silicon substrate thin-film solar cell |
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| CN2012101992503A CN102694080A (en) | 2012-06-18 | 2012-06-18 | Novel titanium dioxide back reflection structure silicon substrate thin-film solar cell |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103741851A (en) * | 2013-09-30 | 2014-04-23 | 百安力钢结构应用科技有限公司 | Composite board curtain wall board |
| CN104070734A (en) * | 2013-03-27 | 2014-10-01 | 常州亚玛顿股份有限公司 | Coated glass with high reflectivity and preparation method of coated glass |
| CN104600142A (en) * | 2014-12-24 | 2015-05-06 | 英利集团有限公司 | Photovoltaic module |
| CN104701398A (en) * | 2013-12-04 | 2015-06-10 | 常州亚玛顿股份有限公司 | High-efficiency double-glass solar cell module |
| CN105679868A (en) * | 2016-04-14 | 2016-06-15 | 董友强 | Silicon-based film solar cell |
| CN107963843A (en) * | 2017-11-29 | 2018-04-27 | 万卓（江苏）新材料有限公司 | A kind of solar energy porcelain tendre ornament materials and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104070734A (en) * | 2013-03-27 | 2014-10-01 | 常州亚玛顿股份有限公司 | Coated glass with high reflectivity and preparation method of coated glass |
| CN104070734B (en) * | 2013-03-27 | 2019-11-15 | 常州亚玛顿股份有限公司 | A kind of coated glass with high reflectivity and preparation method thereof |
| CN103741851A (en) * | 2013-09-30 | 2014-04-23 | 百安力钢结构应用科技有限公司 | Composite board curtain wall board |
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| CN104600142A (en) * | 2014-12-24 | 2015-05-06 | 英利集团有限公司 | Photovoltaic module |
| CN104600142B (en) * | 2014-12-24 | 2017-06-30 | 英利集团有限公司 | Photovoltaic module |
| CN105679868A (en) * | 2016-04-14 | 2016-06-15 | 董友强 | Silicon-based film solar cell |
| CN107963843A (en) * | 2017-11-29 | 2018-04-27 | 万卓（江苏）新材料有限公司 | A kind of solar energy porcelain tendre ornament materials and preparation method thereof |
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Application publication date: 20120926 |