CN102681354B - 决定方法和计算机 - Google Patents

决定方法和计算机 Download PDF

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Publication number
CN102681354B
CN102681354B CN201210061014.5A CN201210061014A CN102681354B CN 102681354 B CN102681354 B CN 102681354B CN 201210061014 A CN201210061014 A CN 201210061014A CN 102681354 B CN102681354 B CN 102681354B
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CN
China
Prior art keywords
value
exposure
conditions
assessment item
optical system
Prior art date
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Active
Application number
CN201210061014.5A
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English (en)
Chinese (zh)
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CN102681354A (zh
Inventor
行田裕一
辻田好一郎
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Canon Inc
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Canon Inc
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Publication of CN102681354A publication Critical patent/CN102681354A/zh
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Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00Arrangements for program control, e.g. control units
    • G06F9/06Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/44Arrangements for executing specific programs
    • G06F9/445Program loading or initiating
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70125Use of illumination settings tailored to particular mask patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441Optical proximity correction [OPC]
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201210061014.5A 2011-03-10 2012-03-09 决定方法和计算机 Active CN102681354B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011053556A JP5728259B2 (ja) 2011-03-10 2011-03-10 プログラム及び決定方法
JP2011-053556 2011-03-10

Publications (2)

Publication Number Publication Date
CN102681354A CN102681354A (zh) 2012-09-19
CN102681354B true CN102681354B (zh) 2014-09-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210061014.5A Active CN102681354B (zh) 2011-03-10 2012-03-09 决定方法和计算机

Country Status (4)

Country Link
US (1) US8584055B2 (enExample)
JP (1) JP5728259B2 (enExample)
KR (1) KR101390586B1 (enExample)
CN (1) CN102681354B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
JP5784657B2 (ja) * 2013-02-26 2015-09-24 株式会社東芝 フォーカス位置調整装置、レチクル、フォーカス位置調整プログラムおよび半導体装置の製造方法
JP6990198B2 (ja) * 2016-06-09 2022-01-12 エーエスエムエル ネザーランズ ビー.ブイ. 投影システムモデリング方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1998361A1 (en) * 2006-02-17 2008-12-03 Nikon Corporation Adjusting method, substrate treating method, substrate treating device, exposure device, inspection device, measurement inspection system, treating device, computer system, program, and information recording medium

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
JP3910032B2 (ja) * 2001-09-25 2007-04-25 大日本スクリーン製造株式会社 基板現像装置
TWI234195B (en) * 2003-04-16 2005-06-11 Nikon Corp Pattern determining method and system, method of manufacturing mask, adjusting method of imaging performance, exposure method and apparatus, information recording medium
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
JP4778685B2 (ja) * 2004-03-10 2011-09-21 株式会社日立ハイテクノロジーズ 半導体デバイスのパターン形状評価方法及びその装置
US8134681B2 (en) * 2006-02-17 2012-03-13 Nikon Corporation Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
JP5235322B2 (ja) 2006-07-12 2013-07-10 キヤノン株式会社 原版データ作成方法及び原版データ作成プログラム
US20080158529A1 (en) * 2006-12-28 2008-07-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5217442B2 (ja) 2008-01-08 2013-06-19 富士通セミコンダクター株式会社 露光データ作成方法及び露光方法
JP2010045309A (ja) * 2008-08-18 2010-02-25 Fujitsu Microelectronics Ltd 露光方法及び半導体装置の製造方法
US8739079B2 (en) * 2009-10-30 2014-05-27 Canon Kabushiki Kaisha Recording medium and determination method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1998361A1 (en) * 2006-02-17 2008-12-03 Nikon Corporation Adjusting method, substrate treating method, substrate treating device, exposure device, inspection device, measurement inspection system, treating device, computer system, program, and information recording medium

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2003-100597A 2003.04.04
JP特开2005-259830A 2005.09.22

Also Published As

Publication number Publication date
JP2012191018A (ja) 2012-10-04
US20120233574A1 (en) 2012-09-13
JP5728259B2 (ja) 2015-06-03
CN102681354A (zh) 2012-09-19
KR101390586B1 (ko) 2014-04-30
KR20120104497A (ko) 2012-09-21
US8584055B2 (en) 2013-11-12

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