CN102668079A - 配置用于减少的谐波的绝缘体上硅(soi)结构、设计结构和方法 - Google Patents
配置用于减少的谐波的绝缘体上硅(soi)结构、设计结构和方法 Download PDFInfo
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- CN102668079A CN102668079A CN2010800529246A CN201080052924A CN102668079A CN 102668079 A CN102668079 A CN 102668079A CN 2010800529246 A CN2010800529246 A CN 2010800529246A CN 201080052924 A CN201080052924 A CN 201080052924A CN 102668079 A CN102668079 A CN 102668079A
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Classifications
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3223—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering using cavities formed by hydrogen or noble gas ion implantation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Abstract
Description
Claims (34)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/627,343 | 2009-11-30 | ||
US12/627,343 US8471340B2 (en) | 2009-11-30 | 2009-11-30 | Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure |
US12/634,893 | 2009-12-10 | ||
US12/634,893 US8698244B2 (en) | 2009-11-30 | 2009-12-10 | Silicon-on-insulator (SOI) structure configured for reduced harmonics, design structure and method |
PCT/US2010/050805 WO2011066035A2 (en) | 2009-11-30 | 2010-09-30 | Silicon-on-insulator (soi) structure configured for reduced harmonics, design structure and method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102668079A true CN102668079A (zh) | 2012-09-12 |
CN102668079B CN102668079B (zh) | 2016-04-27 |
Family
ID=44067169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080052924.6A Expired - Fee Related CN102668079B (zh) | 2009-11-30 | 2010-09-30 | 配置用于减少的谐波的绝缘体上硅(soi)结构和方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8698244B2 (zh) |
CN (1) | CN102668079B (zh) |
CA (1) | CA2780263A1 (zh) |
DE (1) | DE112010004612B4 (zh) |
GB (1) | GB2487860B (zh) |
WO (1) | WO2011066035A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104485309A (zh) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Soi结构的制作方法 |
CN109994537A (zh) * | 2017-12-29 | 2019-07-09 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8471340B2 (en) * | 2009-11-30 | 2013-06-25 | International Business Machines Corporation | Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure |
US8698244B2 (en) | 2009-11-30 | 2014-04-15 | International Business Machines Corporation | Silicon-on-insulator (SOI) structure configured for reduced harmonics, design structure and method |
US8610211B2 (en) | 2010-07-23 | 2013-12-17 | International Business Machines Corporation | Semiconductor-on-insulator (SOI) structure with selectively placed sub-insulator layer void(s) and method of forming the SOI structure |
CN102184879A (zh) * | 2011-05-03 | 2011-09-14 | 中国科学院上海微系统与信息技术研究所 | 一种soi场效应晶体管的tcad仿真校准方法 |
US8759194B2 (en) * | 2012-04-25 | 2014-06-24 | International Business Machines Corporation | Device structures compatible with fin-type field-effect transistor technologies |
US8828746B2 (en) | 2012-11-14 | 2014-09-09 | International Business Machines Corporation | Compensation for a charge in a silicon substrate |
WO2016081367A1 (en) | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION |
US9916415B2 (en) * | 2016-04-11 | 2018-03-13 | Globalfoundries Inc. | Integrated circuit performance modeling that includes substrate-generated signal distortions |
FR3105574B1 (fr) * | 2019-12-19 | 2023-01-13 | Commissariat Energie Atomique | Empilement multicouches de type semi-conducteur-sur-isolant, procédé d’élaboration associé, et module radiofréquence le comprenant |
EP3840033A1 (fr) * | 2019-12-17 | 2021-06-23 | Commissariat à l'énergie atomique et aux énergies alternatives | Procédé de fabrication d'un substrat rf-soi à couche de piégeage issue d'une transformation cristalline d'une couche enterrée |
FR3105572B1 (fr) * | 2019-12-19 | 2023-05-05 | Commissariat Energie Atomique | Procédé de formation d’une portion poreuse dans un substrat |
US11152394B1 (en) | 2020-08-13 | 2021-10-19 | Globalfoundries U.S. Inc. | Structure with polycrystalline isolation region below polycrystalline fill shape(s) and selective active device(s), and related method |
US11588056B2 (en) | 2020-08-13 | 2023-02-21 | Globalfoundries U.S. Inc. | Structure with polycrystalline active region fill shape(s), and related method |
FR3117668B1 (fr) * | 2020-12-16 | 2022-12-23 | Commissariat Energie Atomique | Structure amelioree de substrat rf et procede de realisation |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10284589A (ja) * | 1997-04-03 | 1998-10-23 | Nec Corp | 半導体装置及びその製造方法 |
CN1218994A (zh) * | 1997-12-03 | 1999-06-09 | 松下电器产业株式会社 | 半导体装置 |
US6072217A (en) * | 1998-06-11 | 2000-06-06 | Sun Microsystems, Inc. | Tunable threshold SOI device using isolated well structure for back gate |
US6482725B1 (en) * | 1999-08-18 | 2002-11-19 | Advanced Micro Devices, Inc. | Gate formation method for reduced poly-depletion and boron penetration |
CN1623237A (zh) * | 2002-03-21 | 2005-06-01 | 先进微装置公司 | 完全耗尽型绝缘层上硅结构的掺杂方法和包含所形成掺杂区的半导体器件 |
US20050176204A1 (en) * | 2002-06-10 | 2005-08-11 | Amberwave Systems Corporation | Source and drain elements |
US20060118868A1 (en) * | 2004-12-03 | 2006-06-08 | Toshiba Ceramics Co., Ltd. | A semiconductor substrate comprising a support substrate which comprises a gettering site |
US20060194421A1 (en) * | 2005-02-25 | 2006-08-31 | International Business Machines Corporation | Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator CMOS devices |
US20070264795A1 (en) * | 2006-05-09 | 2007-11-15 | Atmel Corporation | Method and materials to control doping profile in integrated circuit substrate material |
US7326597B2 (en) * | 2003-07-21 | 2008-02-05 | Micron Technology, Inc. | Gettering using voids formed by surface transformation |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5359219A (en) * | 1992-12-04 | 1994-10-25 | Texas Instruments Incorporated | Silicon on insulator device comprising improved substrate doping |
US5514612A (en) * | 1993-03-03 | 1996-05-07 | California Micro Devices, Inc. | Method of making a semiconductor device with integrated RC network and schottky diode |
US6562666B1 (en) * | 2000-10-31 | 2003-05-13 | International Business Machines Corporation | Integrated circuits with reduced substrate capacitance |
JP4055358B2 (ja) * | 2000-12-12 | 2008-03-05 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
US6586817B1 (en) * | 2001-05-18 | 2003-07-01 | Sun Microsystems, Inc. | Device including a resistive path to introduce an equivalent RC circuit |
US7119400B2 (en) * | 2001-07-05 | 2006-10-10 | Isonics Corporation | Isotopically pure silicon-on-insulator wafers and method of making same |
US7335545B2 (en) * | 2002-06-07 | 2008-02-26 | Amberwave Systems Corporation | Control of strain in device layers by prevention of relaxation |
JP4097138B2 (ja) | 2003-03-10 | 2008-06-11 | 独立行政法人科学技術振興機構 | インピーダンス整合回路とそれを用いた半導体素子及び無線通信装置 |
US7263337B2 (en) | 2003-05-16 | 2007-08-28 | Triquint Semiconductor, Inc. | Circuit for boosting DC voltage |
US7257799B2 (en) * | 2003-11-14 | 2007-08-14 | Lsi Corporation | Flexible design for memory use in integrated circuits |
JP2005333090A (ja) | 2004-05-21 | 2005-12-02 | Sumco Corp | P型シリコンウェーハおよびその熱処理方法 |
US8081928B2 (en) | 2005-02-03 | 2011-12-20 | Peregrine Semiconductor Corporation | Canceling harmonics in semiconductor RF switches |
US8736034B2 (en) | 2005-02-24 | 2014-05-27 | Freescale Semiconductor, Inc. | Lead-frame circuit package |
US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
US7276419B2 (en) * | 2005-10-31 | 2007-10-02 | Freescale Semiconductor, Inc. | Semiconductor device and method for forming the same |
US7719141B2 (en) | 2006-11-16 | 2010-05-18 | Star Rf, Inc. | Electronic switch network |
US7700405B2 (en) * | 2007-02-28 | 2010-04-20 | Freescale Semiconductor, Inc. | Microelectronic assembly with improved isolation voltage performance and a method for forming the same |
JP4286877B2 (ja) * | 2007-03-13 | 2009-07-01 | Okiセミコンダクタ株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP5194273B2 (ja) * | 2007-09-20 | 2013-05-08 | 三菱電機株式会社 | 半導体装置 |
US7883990B2 (en) | 2007-10-31 | 2011-02-08 | International Business Machines Corporation | High resistivity SOI base wafer using thermally annealed substrate |
US7904873B2 (en) * | 2008-05-22 | 2011-03-08 | International Business Machines Corporation | System-on-chip (SOC), design structure and method |
US8471340B2 (en) * | 2009-11-30 | 2013-06-25 | International Business Machines Corporation | Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure |
US8698244B2 (en) | 2009-11-30 | 2014-04-15 | International Business Machines Corporation | Silicon-on-insulator (SOI) structure configured for reduced harmonics, design structure and method |
-
2009
- 2009-12-10 US US12/634,893 patent/US8698244B2/en active Active
-
2010
- 2010-09-30 CA CA2780263A patent/CA2780263A1/en not_active Abandoned
- 2010-09-30 GB GB1206521.5A patent/GB2487860B/en not_active Expired - Fee Related
- 2010-09-30 WO PCT/US2010/050805 patent/WO2011066035A2/en active Application Filing
- 2010-09-30 DE DE112010004612.3T patent/DE112010004612B4/de not_active Expired - Fee Related
- 2010-09-30 CN CN201080052924.6A patent/CN102668079B/zh not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10284589A (ja) * | 1997-04-03 | 1998-10-23 | Nec Corp | 半導体装置及びその製造方法 |
CN1218994A (zh) * | 1997-12-03 | 1999-06-09 | 松下电器产业株式会社 | 半导体装置 |
US6072217A (en) * | 1998-06-11 | 2000-06-06 | Sun Microsystems, Inc. | Tunable threshold SOI device using isolated well structure for back gate |
US6482725B1 (en) * | 1999-08-18 | 2002-11-19 | Advanced Micro Devices, Inc. | Gate formation method for reduced poly-depletion and boron penetration |
CN1623237A (zh) * | 2002-03-21 | 2005-06-01 | 先进微装置公司 | 完全耗尽型绝缘层上硅结构的掺杂方法和包含所形成掺杂区的半导体器件 |
US20050176204A1 (en) * | 2002-06-10 | 2005-08-11 | Amberwave Systems Corporation | Source and drain elements |
US7326597B2 (en) * | 2003-07-21 | 2008-02-05 | Micron Technology, Inc. | Gettering using voids formed by surface transformation |
US20060118868A1 (en) * | 2004-12-03 | 2006-06-08 | Toshiba Ceramics Co., Ltd. | A semiconductor substrate comprising a support substrate which comprises a gettering site |
US20060194421A1 (en) * | 2005-02-25 | 2006-08-31 | International Business Machines Corporation | Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator CMOS devices |
US20070264795A1 (en) * | 2006-05-09 | 2007-11-15 | Atmel Corporation | Method and materials to control doping profile in integrated circuit substrate material |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104485309A (zh) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Soi结构的制作方法 |
CN104485309B (zh) * | 2014-12-25 | 2017-06-27 | 上海华虹宏力半导体制造有限公司 | Soi结构的制作方法 |
CN109994537A (zh) * | 2017-12-29 | 2019-07-09 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN109994537B (zh) * | 2017-12-29 | 2022-09-06 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
US11521891B2 (en) | 2017-12-29 | 2022-12-06 | United Microelectronics Corp. | Semiconductor device comprising a deep trench isolation structure and a trap rich isolation structure in a substrate and a method of making the same |
Also Published As
Publication number | Publication date |
---|---|
CN102668079B (zh) | 2016-04-27 |
DE112010004612B4 (de) | 2014-02-13 |
DE112010004612T5 (de) | 2013-01-24 |
WO2011066035A3 (en) | 2011-07-28 |
GB2487860B (en) | 2014-08-27 |
WO2011066035A2 (en) | 2011-06-03 |
GB201206521D0 (en) | 2012-05-30 |
CA2780263A1 (en) | 2011-06-03 |
US8698244B2 (en) | 2014-04-15 |
GB2487860A (en) | 2012-08-08 |
US20110131542A1 (en) | 2011-06-02 |
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