CN102666945A - Ⅲ族氮化物晶体衬底、包含外延层的ⅲ族氮化物晶体衬底、半导体器件及其制造方法 - Google Patents

Ⅲ族氮化物晶体衬底、包含外延层的ⅲ族氮化物晶体衬底、半导体器件及其制造方法 Download PDF

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Publication number
CN102666945A
CN102666945A CN2010800576603A CN201080057660A CN102666945A CN 102666945 A CN102666945 A CN 102666945A CN 2010800576603 A CN2010800576603 A CN 2010800576603A CN 201080057660 A CN201080057660 A CN 201080057660A CN 102666945 A CN102666945 A CN 102666945A
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crystalline substrates
equal
iii nitride
major surfaces
less
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Chinese (zh)
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石桥惠二
善积祐介
美浓部周吾
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
CN2010800576603A 2009-12-18 2010-11-15 Ⅲ族氮化物晶体衬底、包含外延层的ⅲ族氮化物晶体衬底、半导体器件及其制造方法 Pending CN102666945A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009287590A JP4835749B2 (ja) 2009-12-18 2009-12-18 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
JP2009-287590 2009-12-18
PCT/JP2010/070290 WO2011074361A1 (ja) 2009-12-18 2010-11-15 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法

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CN102666945A true CN102666945A (zh) 2012-09-12

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CN2010800576603A Pending CN102666945A (zh) 2009-12-18 2010-11-15 Ⅲ族氮化物晶体衬底、包含外延层的ⅲ族氮化物晶体衬底、半导体器件及其制造方法

Country Status (6)

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EP (1) EP2514858A4 (de)
JP (1) JP4835749B2 (de)
KR (1) KR20120106803A (de)
CN (1) CN102666945A (de)
TW (1) TWI499082B (de)
WO (1) WO2011074361A1 (de)

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CN107208305A (zh) * 2015-01-22 2017-09-26 希波特公司 裂缝减少的iii族氮化物块状晶体的种晶选择和生长方法
TWI638071B (zh) * 2013-08-08 2018-10-11 三菱化學股份有限公司 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ單結晶之製造方法及半導體裝置之製造方法

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MX2011007939A (es) * 2011-07-13 2013-01-24 William J Odom Jr Aparato y metodo de iluminacion para casa de aves.
WO2013035539A1 (ja) * 2011-09-05 2013-03-14 旭硝子株式会社 研磨剤および研磨方法
JP2013177256A (ja) * 2012-02-28 2013-09-09 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物基板
JP2013247329A (ja) * 2012-05-29 2013-12-09 Mitsui Mining & Smelting Co Ltd 研摩材スラリー
WO2015107813A1 (ja) 2014-01-17 2015-07-23 三菱化学株式会社 ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法
JP6264990B2 (ja) * 2014-03-26 2018-01-24 日亜化学工業株式会社 窒化物半導体基板の製造方法
JP6243009B2 (ja) * 2014-03-31 2017-12-06 株式会社ノリタケカンパニーリミテド ＧａＮ単結晶材料の研磨加工方法
WO2016084682A1 (ja) * 2014-11-27 2016-06-02 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
JP6366485B2 (ja) * 2014-12-04 2018-08-01 株式会社ディスコ ウエーハの生成方法
JP6366486B2 (ja) * 2014-12-04 2018-08-01 株式会社ディスコ ウエーハの生成方法
JP6999101B2 (ja) * 2017-02-16 2022-01-18 国立大学法人埼玉大学 エッチング方法
WO2018190780A1 (en) * 2017-04-12 2018-10-18 Ozyegin Universitesi Chemical mechanical planarization of gallium nitride
JP2021012900A (ja) * 2019-07-03 2021-02-04 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物系半導体レーザ素子
WO2024181478A1 (ja) * 2023-02-28 2024-09-06 京セラ株式会社 単結晶基板の製造方法

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TWI638071B (zh) * 2013-08-08 2018-10-11 三菱化學股份有限公司 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ單結晶之製造方法及半導體裝置之製造方法
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CN107208305A (zh) * 2015-01-22 2017-09-26 希波特公司 裂缝减少的iii族氮化物块状晶体的种晶选择和生长方法

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JP2011129752A (ja) 2011-06-30
EP2514858A1 (de) 2012-10-24
EP2514858A4 (de) 2013-11-13
WO2011074361A1 (ja) 2011-06-23
KR20120106803A (ko) 2012-09-26
TWI499082B (zh) 2015-09-01
JP4835749B2 (ja) 2011-12-14
TW201125163A (en) 2011-07-16

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Application publication date: 20120912