CN102655410A - Voltage controlled oscillator, and test system and test method for detecting technological fluctuation - Google Patents
Voltage controlled oscillator, and test system and test method for detecting technological fluctuation Download PDFInfo
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Abstract
The invention belongs to the technical field of microelectronics, and in particular relates to a VCO (voltage controlled oscillator), and a test system and a test method for detecting technological fluctuation. The VCO comprises a ring oscillator and a current controlled MOS (Metal Oxide Semiconductor) tube, wherein the ring oscillator comprises odd number of CMOS (Complementary Metal-Oxide-Semiconductor Transistor) phase inverters; a bias voltage is input at a grid end of the current controlled MOS tube so that the current controlled MOS tube is worked in a sub-threshold region, the current flowing through one CMOS phase inverter is further controlled, and therefore the output frequency of the VCO reflects the threshold voltage of the current controlled MOS tube. The test system is formed based the VCO. The random fluctuation value of the threshold voltage among different MOS tubes inside a chip is tested by using the test method provided by the invention. The VCO has the advantages that a circuit is simple and the digitization is easy to achieve. When the technological fluctuation is tested by using the testing system based on the VCO, the random fluctuation value of the threshold voltage with high sensitivity can be obtained, and the test accuracy is good.
Description
Technical field
The invention belongs to microelectronics technology, relate to the detection of chip technology fluctuation, relate in particular to be used for the characterization processes fluctuation based on voltage controlled oscillator (Voltage Control Oscillator, test macro VCO) and method of testing thereof.
Background technology
Along with the continuous development of microelectronic manufacturing technology, the characteristic size of device is more and more littler, and the size of technology generations is also more and more littler.Although chip fabrication techniques constantly develops, the problem of technological fluctuation is inevitable at random, even its performance impact to chip more and more can not ignore.
Normally; Technological fluctuation be by between same batch or the trickle fabrication error between the different batches cause; This fabrication error can cause the slight change on the structural parameters of device equally; For example, the channel length of MOS (Metal Oxide Semiconductor, Metal-oxide-semicondutor) pipe, channel doping concentration or the like.For metal-oxide-semiconductor, the variation of these structural parameters can be reflected in the threshold voltage (V of metal-oxide-semiconductor
TH) variation on.Therefore, pass through the random fluctuation value of the threshold voltage in the measured chip array metal-oxide-semiconductor usually, thereby reflect the technological fluctuation of chip array.This is the method for industrial quarters characterization processes fluctuation commonly used, and this method can be used for detecting technological fluctuation, or the technological fluctuation of same batch of chip or the characteristic of technological fluctuation at random of different batches chip of same chip.
Intel and Purdue University disclose a kind of technical scheme of random fluctuation value of test threshold voltage with (ISSCC 2010/SESSION 9/DIGITAL CIRCUITS & SENSORS/9.7) in the paper that is entitled as " Accurate Characterization of Random Process Variations Using a Robust Low-Voltage High-Sensitivity Sensor Featuring Replica-Bias Circuit " in the international academic conference of ISSCC in 2010.In this technical scheme; With the subthreshold current conversion of signals of tested metal-oxide-semiconductor (also being DUT, Device Under Test, measured device) is voltage signal output; Because there are more unified functional relation in subthreshold current and threshold voltage; Therefore, under the certain situation of the grid end institute bias voltage of tested metal-oxide-semiconductor, its voltage signal of exporting depends on the threshold voltage V of pipe to be measured strongly
THNormally, select earlier some in the metal-oxide-semiconductor array (for example, it forms through same batch of technology manufacturing) of measured tube, at the calibration voltage V of the grid end upper offset certain limit of this alignment unit as alignment unit
CALIBThereby, and in this scope interscan measurement output voltage V
OUT, draw output voltage V
OUTWith calibration voltage V
CALIBBetween function relation curve (V
OUT=f (V
CALIB)).Further, any tested metal-oxide-semiconductor to other, at its grid end upper offset less than threshold voltage according V
DDAnd measure its output voltage V simultaneously
OUT,, draw the V of this tested metal-oxide-semiconductor according to above function relation curve
OUTCalibration voltage V corresponding to alignment unit
CALIB, i.e. f
-1(V
OUT), therefore, the random fluctuation value △ V of the threshold voltage between this tested metal-oxide-semiconductor and the alignment unit
TH=f
-1(V
OUT)-V
DD△ V
THAlso reflected the technological fluctuation between alignment unit and this tested metal-oxide-semiconductor.Likewise, through to each by the measurement of metal-oxide-semiconductor, can reflect the technological fluctuation characteristic of this metal-oxide-semiconductor array.
But there is following shortcoming in this method of propositions such as Intel:
(1) because output voltage V
OUTGenerally at 0-0.3V, input voltage is interfered easily and causes V
OUTMeasure inaccurate, so △ V
THBe difficult to accurately reflect the technological fluctuation characteristic;
(2) need consider the influence of process corner (process conner) fluctuation simultaneously, need design other circuit for the process corner compensation in the test circuit test;
(3) output voltage V
OUTBe analog signal, the output of this analog signal needs buffer (buffer), and the buffer of introducing can produce error, is prone to cause V
OUTUntrue.Simultaneously, the circuit of this test integral body is analog circuit, after the prepared formation, is difficult to guarantee its operate as normal in its technology in early days.
In view of this, be necessary to propose a kind of new method or circuit, come the random fluctuation value △ V of accurate measurement threshold voltage
THCharacteristic with accurate reflection technological fluctuation.
Summary of the invention
The technical problem that the present invention will solve is accurately to measure the random fluctuation value △ V of the threshold voltage between the DUT
THCharacteristic with accurate reflection technological fluctuation.
For solving above technical problem,, a kind of voltage controlled oscillator is provided according to one side of the present invention.Voltage controlled oscillator comprises ring oscillator and Flow Control metal-oxide-semiconductor; Said ring oscillator comprises a plurality of CMOS inverters; Wherein, At the grid end bias voltage of said Flow Control metal-oxide-semiconductor so that it works in sub-threshold region and then the control flows electric current through one of them said CMOS inverter, so that the output frequency of said voltage controlled oscillator reflects the threshold voltage of said Flow Control metal-oxide-semiconductor.
Preferably, said ring oscillator comprises the odd number CMOS inverter more than three or three.
Particularly, each said CMOS inverter output is connected to the input of another CMOS inverter.
According to the embodiment of voltage controlled oscillator provided by the invention, wherein, said Flow Control metal-oxide-semiconductor is PMOS pipe and/or NMOS pipe.
Particularly, the functional relation of subthreshold current of the output frequency of said voltage controlled oscillator and the said Flow Control metal-oxide-semiconductor that works in sub-threshold region:
F_out=I
sub/Q
Wherein, F_out is the output frequency of said voltage controlled oscillator, I
SubBe the subthreshold current of said Flow Control metal-oxide-semiconductor, Q is the total charge dosage that the frequency output terminal parasitic capacitance is stored.
Particularly, the functional relation of the threshold voltage of the output frequency of said voltage controlled oscillator and said Flow Control metal-oxide-semiconductor and grid end bias voltage:
F_out=F（V
CC ︱V
TH）
Wherein, F_out is the output frequency of said voltage controlled oscillator, V
THBe the threshold voltage of said Flow Control metal-oxide-semiconductor, V
CCGrid end bias voltage for said Flow Control metal-oxide-semiconductor.
Particularly, in threshold voltage one timing of said Flow Control metal-oxide-semiconductor, by relational expression F_out=F (V
CC ︱V
TH), the said grid end of scan variations bias voltage draws the functional relation of output frequency and grid end bias voltage:
F_out=f（V
CC）
Wherein, F_out is the output frequency of said voltage controlled oscillator, V
THBe the threshold voltage of said Flow Control metal-oxide-semiconductor, V
CCGrid end bias voltage for said Flow Control metal-oxide-semiconductor.
Preferably, the source end/drain terminal of said Flow Control metal-oxide-semiconductor is electrically connected at source end/drain terminal of the PMOS of one of them said CMOS inverter.
According to another aspect of the present invention; A kind of test macro that is used for the characterization processes fluctuation is provided; Its random fluctuation value through the threshold voltage between the different metal-oxide-semiconductors in the test chip detects the technological fluctuation of said chip; Said test macro comprises wherein a kind of voltage controlled oscillator that the above reaches, and wherein, the arbitrary said metal-oxide-semiconductor in the said chip is as the Flow Control metal-oxide-semiconductor of said voltage controlled oscillator.
According to the embodiment of test macro provided by the invention, wherein, said test macro also comprises:
Switch arrays are used for the metal-oxide-semiconductor of the said chip of gating;
Address decoder is used for INADD is decoded and exported said switch arrays to; And
Frequency divider.
Preferably, the different metal-oxide-semiconductors in the said chip comprise the metal-oxide-semiconductor of calibrating metal-oxide-semiconductor and being used as measured device.Select at random in a plurality of metal-oxide-semiconductors of said calibration metal-oxide-semiconductor in said chip.
Preferably, the different metal-oxide-semiconductors in the said chip are made simultaneously under the same process conditions of setting and are formed.
Again on the one hand the method for testing of more than one described test macros is provided according to of the present invention, is used for the random fluctuation value of the threshold voltage between the different metal-oxide-semiconductors of test chip, it may further comprise the steps:
(1) the calibration metal-oxide-semiconductor in the said chip of selection is to form foregoing voltage controlled oscillator;
(2) the grid end bias voltage of said calibration metal-oxide-semiconductor is imported in scanning, draws output frequency F_out and its grid end bias voltage V of the corresponding voltage controlled oscillator of said calibration metal-oxide-semiconductor
CalibFunctional relation: F_out=f (V
Calib);
(3) N the metal-oxide-semiconductor as measured device in the said chip of selection is to form foregoing voltage controlled oscillator;
(4) the grid end of said N metal-oxide-semiconductor is biased voltage V
CCN, make this metal-oxide-semiconductor work in sub-threshold region;
(5) according to the output frequency F_outN of the corresponding voltage controlled oscillator of said N metal-oxide-semiconductor, with said functional relation F_out=f (V
Calib) inverse function V
Calib=f
-1(F_out) obtain V
CalibN, wherein, V
CalibNWhen the output frequency of representing the voltage controlled oscillator that said calibration metal-oxide-semiconductor is corresponding is F_outN, the voltage of the required biasing of grid end of said calibration metal-oxide-semiconductor.
(6) pass through V
CalibNBe biased voltage V with the grid end of said N metal-oxide-semiconductor
CCNBetween difference draw the random fluctuation value △ V of the threshold voltage between said N metal-oxide-semiconductor and the said calibration metal-oxide-semiconductor
THN
Wherein, N is the integer more than or equal to 1.
Particularly, when N changed, repeating said steps (3) was to step (6).
Preferably, when repeating said step (4), the grid end of each metal-oxide-semiconductor is biased voltage V at every turn
CCNBe set to identical.
Preferably, said calibration metal-oxide-semiconductor is through confirm in a plurality of metal-oxide-semiconductors in said chip at random.
Technique effect of the present invention is, VCO circuit provided by the invention is simple, and output frequency information can accurately reflect the threshold voltage information of each Flow Control metal-oxide-semiconductor, is easy to Digital Realization.And use this VCO test macro its be used for test technology when fluctuation, can obtain the very high threshold voltage random fluctuation value of sensitivity, test accuracy is good.
Description of drawings
From the following detailed description that combines accompanying drawing, will make above and other objects of the present invention and advantage clear more fully, wherein, same or analogous key element adopts identical label to represent.
Fig. 1 is the electrical block diagram of the VCO that provides according to one embodiment of the invention.
Fig. 2 is the electrical block diagram of the VCO that provides according to further embodiment of this invention.
Fig. 3 is the electrical block diagram of the VCO that provides according to yet another embodiment of the invention.
Fig. 4 is the test system module structural diagrams that is used for the characterization processes fluctuation that provides according to one embodiment of the invention.
Fig. 5 is the physical circuit sketch map of the VCO in the test macro shown in Figure 4.
Fig. 6 is the method for testing diagram of test macro of the present invention when being used for the characterization processes fluctuation.
Embodiment
What introduce below is some among a plurality of possibility embodiment of the present invention, aims to provide basic understanding of the present invention, is not intended to confirm key of the present invention or conclusive key element or limits claimed scope.Understand easily, according to technical scheme of the present invention, do not changing under the connotation of the present invention, but one of ordinary skill in the art can propose other implementation of mutual alternative.Therefore, following embodiment and accompanying drawing only are the exemplary illustrations to technical scheme of the present invention, and should not be regarded as qualification or the restriction to technical scheme of the present invention that all perhaps be regarded as of the present invention.
Among the present invention, (Voltage Control Oscillator is the oscillation of a function device of a kind of its output frequency (F_out-) and input voltage (V promptly controls voltage) VCO) to voltage controlled oscillator, promptly has the functional relation of F_out-=f (V) among the VCO.
Electrical block diagram for the VCO that provides according to one embodiment of the invention shown in Figure 1.The VCO of this embodiment can specifically be used to measure the random fluctuation value △ V of the threshold voltage between the different metal-oxide-semiconductors
THTo detect the characteristic of its technological fluctuation.As shown in Figure 1, this VCO is based on the ring oscillator (Ring Oscillator) that transmission delay is regulated oscillator frequency, and VCO comprises ring oscillator part and Flow Control metal-oxide-semiconductor 312 (M0).Wherein ring oscillator part realizes through odd number (more than or equal to 3) the inverter formation loop that is connected in series in this embodiment.Particularly, the output of each inverter in 4 inverters 341 and 1 the CMOS inverter 342 is connected to the input of another inverter, successively the head and the tail formation loop that is connected in series; Source end of one of them metal-oxide-semiconductor (M1) in the CMOS inverter 342 or the drain terminal source end or the drain terminal that are connected in series in Flow Control metal-oxide-semiconductor 312 wherein, source end of another metal-oxide-semiconductor (M2) in the CMOS inverter 342 or drain terminal input voltage V
DD, therefore, the grid end bias voltage V of Flow Control metal-oxide-semiconductor 312
CCSo that the Flow Control metal-oxide-semiconductor is when working in sub-threshold region, the electric current of the CMOS inverter 342 of flowing through is to receive V
CCControl.Normally, 4 inverter 341 devices also can be the CMOS inverter identical with 342, just in this embodiment, select 342 conducts of CMOS inverter and Flow Control metal-oxide-semiconductor 312 (input voltage V
DDDirection) inverter of series connection; In other embodiments, the source end of Flow Control metal-oxide-semiconductor 312 or drain terminal also can be connected in series with the source end or the drain terminal of any PMOS pipe in other 4 inverters 341.
The output frequency F_out of this VCO is the total transmission delay that depends on the inverter of series connection.And the voltage V that the voltage-controlled end (also being the grid end) of working as Flow Control metal-oxide-semiconductor 312 is imported
CCDuring less than the threshold voltage of metal-oxide-semiconductor 312, its electric current that flows through is a subthreshold current.Because subthreshold current is smaller usually, for the inverter 342 that Flow Control metal-oxide-semiconductor 312 is connected, its transmission delay depends primarily on Flow Control metal-oxide-semiconductor 312 (voltage V
DDM2, M1 to M0 by inverter 342 transmit successively).Therefore; The transmission delay of CMOS inverter 342 is far longer than the transmission delay of other inverter 341; Output frequency F_out depends on the transmission delay of CMOS inverter 342 basically; Thereby also be the subthreshold current information that output frequency F_out can reflect Flow Control metal-oxide-semiconductor 312 basically, further to have reflected simultaneously the threshold voltage information of Flow Control metal-oxide-semiconductor 312.
Therefore, at the grid end bias voltage V of metal-oxide-semiconductor 312
CCAnd V
CCDuring less than the threshold voltage of opening M OS pipe 312, metal-oxide-semiconductor 312 will be operated in sub-threshold region this moment.Output frequency F_out depends primarily on V
CCSelf size and threshold voltage V of metal-oxide-semiconductor 312
TH, promptly depend primarily on threshold voltage V
THWith V
CCDifference size.
With VCO embodiment illustrated in fig. 1 is example, biasing V
CCSo that Flow Control metal-oxide-semiconductor 312 works in sub-threshold region, at this moment, the subthreshold current I of output frequency F_out and Flow Control metal-oxide-semiconductor 312
SubClosely related, can obtain following relational expression:
F_out=I
sub/Q （1）
Wherein Q is the total charge dosage that the frequency output terminal parasitic capacitance is stored, I
SubSubthreshold current for Flow Control metal-oxide-semiconductor 312.
Further, can know I according to the computing formula of the subthreshold current of metal-oxide-semiconductor 312
SubThreshold voltage V with metal-oxide-semiconductor 312
THClosely related, therefore, can further draw relational expression by relational expression (1):
F_out=F（V
CC ︱V
TH）?（2）
Relational expression (2) expression output frequency and variable V
CC, V
THFunctional relation F.For this embodiment, Flow Control metal-oxide-semiconductor 312 is NMOS pipe, V
THGreater than 0, therefore, V
CCCan be biased in 0 to V
THBetween, F_out depends primarily on threshold voltage V
THWith V
CCDifference size.
In relational expression (2), if the control voltage V of input
CCWhen changing (metal-oxide-semiconductor 312 is operated in the sub-threshold region to be changed), for example, V is imported in scanning within the specific limits
CC, can be from obtaining different output frequency F_out, thereby, V
CCCan the formation function relation curve with F_out, also be F_out=f (V
CC) (also be in the relational expression (2), V
THDuring the functional relation that obtains by constant of differentiation).At this moment, Flow Control metal-oxide-semiconductor 312 can be as the calibration metal-oxide-semiconductor, and in this embodiment, the calibration metal-oxide-semiconductor can be selected at random.
When Flow Control metal-oxide-semiconductor 312 was expressed as different metal-oxide-semiconductors, even because the technological fluctuation factor causes the threshold voltage of the different metal-oxide-semiconductors of same batch of manufacturing also can produce fluctuation, therefore, the threshold voltage of each metal-oxide-semiconductor was not absolute equating.The control voltage V that is imported on the different metal-oxide-semiconductors
CCUnder the constant situation, F_out maybe be because the random fluctuation of its threshold voltage (this moment V
THWith V
CCThe difference size also change) and change (according to the relation (2)).
Can know that in sum the output frequency F_out of VCO of the present invention can effectively reflect the threshold voltage V of Flow Control metal-oxide-semiconductor 312
THAnd grid terminal voltage V
CC, when testing, can accurately reflect random fluctuation value △ V with the threshold voltage between the Flow Control metal-oxide-semiconductor for different Flow Control metal-oxide-semiconductors
THThereby, accurately reflecting the characteristic of technological fluctuation, its concrete method of testing will be described following in detail step by step.And output frequency F_out is easy to Digital Realization, and the output signal is accurate.
Need to prove that the concrete form of ring oscillator is not limited by specific embodiment shown in Figure 1, for example, the even number of inverters series connection that its certain one-level paraphase of can also serving as reasons connects forms.In addition, in this embodiment, the number of inverter 341 is to get final product more than or equal to 2 even number, and for example it can be 16.
In embodiment illustrated in fig. 1, Flow Control metal-oxide-semiconductor 312 is the NMOS pipe.Likewise, the ring oscillator among the VCO of the present invention can also be connected with PMOS, perhaps can also be connected simultaneously with NMOS with PMOS.
Electrical block diagram for the VCO that provides according to further embodiment of this invention shown in Figure 2.In this embodiment, the ring oscillator among the VCO is connected with PMOS, and it is used to measure the threshold voltage random fluctuation value of PMOS pipe.Than VCO embodiment illustrated in fig. 1, its difference only is that the Flow Control metal-oxide-semiconductor 312 with NMOS replaces with the Flow Control metal-oxide-semiconductor 313 of PMOS, and the operation principle of its basic functional principle and VCO embodiment illustrated in fig. 1 is similar, gives unnecessary details no longer one by one at this.
Electrical block diagram for the VCO that provides according to yet another embodiment of the invention shown in Figure 3.In this embodiment, the ring oscillator among the VCO is connected with NMOS with PMOS simultaneously, and it promptly can be used to measure the threshold voltage random fluctuation value that PMOS manages, and also can be used for the threshold voltage random fluctuation value of measuring N metal-oxide-semiconductor.Than VCO embodiment illustrated in fig. 1, its difference only is to increase the Flow Control metal-oxide-semiconductor 313 of PMOS, and the operation principle of its basic functional principle and VCO embodiment illustrated in fig. 1 is similar, gives unnecessary details no longer one by one at this.
Modular structure sketch map for the test macro that is used for characterization processes fluctuation that provides according to one embodiment of the invention shown in Figure 4.As previously discussed, VCO provided by the invention can be used for the characterization processes wave characteristic.Test macro of the present invention is based on VCO of the present invention and forms.In this embodiment, test macro 300 schematically describes based on VCO shown in Figure 1.
Consult Fig. 4, test macro 300 is used for the technological fluctuation of detection chip 310, and its random fluctuation value through the threshold voltage between the different metal-oxide-semiconductors in the test chip 310 is come the technological fluctuation of detection chip 310.Chip 310 comprises calibration metal-oxide-semiconductor 311 that is used as alignment unit and the DUT array 312 that is used as tested metal-oxide-semiconductor (being measured device).Preferably, test macro 300 also comprises switch arrays 320, address decoder 330, ring oscillator (RO) 340 and frequency divider 350.Connect between ring oscillator (RO) 340 and the tested chip 310 switch arrays 320 are set; Particularly; Switching device (for example metal-oxide-semiconductor) in the corresponding switch arrays 320 of each metal-oxide-semiconductor of chip 310; Thereby, can pass through switch arrays 320, at least one metal-oxide-semiconductor in the selection chip 310 is connected with a CMOS inverter among the RO340 and is formed VCO shown in Figure 1.Address decoder 330 is from outside receiver address signal, and the signal behind the output decoder to switch arrays 320, and is that switch arrays 320 can be controlled wherein switching device conducting according to the signal of input or turn-off, thereby realizes the gating of tested metal-oxide-semiconductor.Therefore, can specifically select the one or more metal-oxide-semiconductors in the chip 310 to test.Preferably, the output frequency of RO 340 is through frequency divider 350 output, and frequency divider 350 has the effect of the medium and low frequency oscillator signal that high-frequency oscillation signal (the output signal of RO 340) is become to be convenient to test with certain multiple frequency division.
Shown in Figure 5 is the physical circuit sketch map of the VCO in the test macro shown in Figure 4.As shown in Figure 5, through the address of decoding, a certain metal-oxide-semiconductor of gating in switch arrays 320, thus choose one of them metal-oxide-semiconductor in the chip 310 as the Flow Control metal-oxide-semiconductor, form VCO jointly with RO340.
Need to prove that the address decoder 330 in the test macro 300, switch arrays 320, RO340, frequency divider 350 etc. can be realized with the form that chip 310 integrates with same chip together.
Shown in Figure 6 is the method for testing of test macro of the present invention when being used for the characterization processes fluctuation.Below in conjunction with Fig. 4, Fig. 5 and Fig. 6, specify the method for testing of this embodiment.
Step S510, at first, the pairing switching device of gating calibration metal-oxide-semiconductor in switch arrays.
In this step, calibration metal-oxide-semiconductor and tested metal-oxide-semiconductor are that same batch of manufacturing forms, and also promptly calibrating metal-oxide-semiconductor and tested metal-oxide-semiconductor is under the same process conditions of setting, to make simultaneously to form.Therefore, preferably, can with mode at random in chip 310, select at random one of them metal-oxide-semiconductor as the calibration metal-oxide-semiconductor 311, and if the calibration metal-oxide-semiconductor 311 actual threshold voltage be V
TH0Through the address of input, control the pairing switching device of calibration metal-oxide-semiconductor in the gating switch array 320, thereby calibration metal-oxide-semiconductor 311 can form VCO as shown in Figure 1 with RO340.
Step S520, the grid end bias voltage V of scanning input calibration metal-oxide-semiconductor
Calib, draw the output frequency F_out and the V that calibrate the corresponding VCO of metal-oxide-semiconductor
CalibFunctional relation F_out=f (V
Calib).
In this step, preferably, the grid end bias voltage V of calibration metal-oxide-semiconductor
CalibLess than its threshold voltage V
TH0, so that the calibration metal-oxide-semiconductor works in sub-threshold region.Thus, can draw F_out and V
CalibRelation curve.
Step S530, gating N pairing switching device of tested metal-oxide-semiconductor in switch arrays.
In this step, particularly, if comprise M metal-oxide-semiconductor in the DUT array, and needs are measured the random fluctuation value of the threshold voltage of all M metal-oxide-semiconductor relative calibration MOS unit.With the initial value of N is 1 to be example, through the address of input, controls N pairing switching device of tested metal-oxide-semiconductor in the gating switch array 320, thereby N tested metal-oxide-semiconductor and RO340 can form VCO as shown in Figure 1.The actual threshold voltage of supposing N tested metal-oxide-semiconductor is V
CCN
Step S540, the grid end of said tested metal-oxide-semiconductor is biased voltage V
CCNSo that tested metal-oxide-semiconductor works in sub-threshold region, draw the output frequency F_outN of the corresponding VCO of said tested metal-oxide-semiconductor.Can know that by above operation principle F_outN depends primarily on threshold voltage V about VCO
THNWith V
CCNDifference size.In this embodiment, for each tested metal-oxide-semiconductor (along with the variation of N), preferably, its grid end is biased voltage V
CCNBe traditionally arranged to be identical.
Step S550 is according to output frequency F_outN, with functional relation F_out=f (V
Calib) inverse function V
Calib=f
-1(F_out) obtain V
CalibNWherein, V
CalibNReflect the corresponding VCO of calibration metal-oxide-semiconductor when output frequency is F_outN, the magnitude of voltage of the required biasing of its grid end.
Step S560 obtains V
CalibNWith V
CCNBetween difference, this difference reflects N tested metal-oxide-semiconductor and the threshold voltage random fluctuation value △ V that calibrates between the metal-oxide-semiconductor
THN
In this step, V
CalibNWith V
CCNBetween difference be because this is further caused with calibrating the threshold voltage difference that technological fluctuation caused between the metal-oxide-semiconductor by metal-oxide-semiconductor.△ V
THNCan calculate according to following formula:
△V
THN?=V
THN—V
TH0=V
CCN—V
calibN （3）
Therefore, can accurately draw this, thereby reflect that accurately this is by the technological fluctuation characteristic between metal-oxide-semiconductor and the calibration metal-oxide-semiconductor by the random fluctuation value of threshold voltage between metal-oxide-semiconductor and the calibration metal-oxide-semiconductor.
Step S570, N=N+1 is prepared by metal-oxide-semiconductor for further measuring the next one.
Step S580 judges whether (N+1) is less than or equal to M, if be judged as " being ", gets into step S530, if be judged as " denying ", representes that then all the tested metal-oxide-semiconductors in the DUT array finish with to be tested.
So far, can obtain each random fluctuation value of M tested metal-oxide-semiconductor in the DUT array with respect to the threshold voltage between the calibration metal-oxide-semiconductor.According to statistical analysis, can draw the technological fluctuation characteristic of this chip 310.Need to prove, indirectly, through the corresponding △ V of a plurality of tested metal-oxide-semiconductors
THN, can draw the random fluctuation value of the threshold voltage between any two tested metal-oxide-semiconductors, for example, through the 1st the tested metal-oxide-semiconductor of gained and the random fluctuation value △ V of the threshold voltage between the calibration metal-oxide-semiconductor
TH1, the threshold voltage between the 2nd tested metal-oxide-semiconductor and the calibration metal-oxide-semiconductor random fluctuation value △ V
TH2, (△ V
TH1-△ V
TH2) promptly draw the random fluctuation value of the threshold voltage between the 1st tested metal-oxide-semiconductor and the 2nd the tested metal-oxide-semiconductor indirectly.
Above example mainly explained VCO of the present invention, based on test macro and the method for testing of this VCO.Although only some of them execution mode of the present invention is described, those of ordinary skills should understand, and the present invention can be in not departing from its purport and scope implements with many other forms.Therefore, example of being showed and execution mode are regarded as schematic and nonrestrictive, are not breaking away under the situation of liking defined spirit of the present invention of each claim and scope enclosed, and the present invention possibly contained various modifications and replacement.
Claims (15)
1. voltage controlled oscillator; It is characterized in that comprising ring oscillator and Flow Control metal-oxide-semiconductor; Said ring oscillator comprises a plurality of CMOS inverters; Wherein, at the grid end bias voltage of said Flow Control metal-oxide-semiconductor so that it works in sub-threshold region and then the control flows electric current through a said CMOS inverter, so that the output frequency of said voltage controlled oscillator reflects the threshold voltage of said Flow Control metal-oxide-semiconductor.
2. voltage controlled oscillator as claimed in claim 1 is characterized in that, said ring oscillator comprises the odd number CMOS inverter more than three or three.
3. according to claim 1 or claim 2 voltage controlled oscillator is characterized in that each said CMOS inverter output is connected to the input of another said CMOS inverter.
4. voltage controlled oscillator as claimed in claim 3 is characterized in that, said Flow Control metal-oxide-semiconductor is PMOS pipe and/or NMOS pipe.
5. voltage controlled oscillator as claimed in claim 1 is characterized in that, the output frequency of said voltage controlled oscillator with the functional relation of the subthreshold current of the said Flow Control metal-oxide-semiconductor that works in sub-threshold region is:
F_out=I
sub/Q
Wherein, F_out is the output frequency of said voltage controlled oscillator, I
SubBe the subthreshold current of said Flow Control metal-oxide-semiconductor, Q is the total charge dosage that the frequency output terminal parasitic capacitance is stored.
6. like claim 1 or 5 described voltage controlled oscillators, it is characterized in that the functional relation of the threshold voltage of the output frequency of said voltage controlled oscillator and said Flow Control metal-oxide-semiconductor and grid end bias voltage is:
F_out=F（V
CC ︱V
TH）
Wherein, F_out is the output frequency of said voltage controlled oscillator, V
THBe the threshold voltage of said Flow Control metal-oxide-semiconductor, V
CCGrid end bias voltage for said Flow Control metal-oxide-semiconductor.
7. voltage controlled oscillator as claimed in claim 6 is characterized in that, in threshold voltage one timing of said Flow Control metal-oxide-semiconductor, by relational expression F_out=F (V
CC ︱V
TH), the said grid end of scan variations bias voltage, the functional relation that obtains output frequency and grid end bias voltage is:
F_out=f（V
CC）
Wherein, F_out is the output frequency of said voltage controlled oscillator, V
THBe the threshold voltage of said Flow Control metal-oxide-semiconductor, V
CCGrid end bias voltage for said Flow Control metal-oxide-semiconductor.
8. voltage controlled oscillator as claimed in claim 1 is characterized in that, the source end/drain terminal correspondence of said Flow Control metal-oxide-semiconductor is electrically connected at source end/drain terminal of the PMOS of one of them said CMOS inverter.
9. one kind based on the test macro that is used for characterization processes fluctuation like each described voltage controlled oscillator among the claim 1-8; Its random fluctuation value through the threshold voltage between the different metal-oxide-semiconductors in the test chip detects the technological fluctuation of said chip; It is characterized in that; Said test macro comprises that like each described voltage controlled oscillator among the claim 1-8 wherein, the arbitrary metal-oxide-semiconductor in the said chip is as the Flow Control metal-oxide-semiconductor of said voltage controlled oscillator.
10. test macro as claimed in claim 9 is characterized in that, said test macro also comprises:
Switch arrays are used for the metal-oxide-semiconductor of the said chip of gating;
Address decoder is used for INADD is decoded and exported said switch arrays to; And
Frequency divider.
11., it is characterized in that different metal-oxide-semiconductors comprise the metal-oxide-semiconductor of calibrating metal-oxide-semiconductor and being used as measured device in the said chip like claim 9 or 10 described test macros;
Select at random in a plurality of metal-oxide-semiconductors of said calibration metal-oxide-semiconductor in said chip.
12. one kind based on the method for testing like the described test macro of one of claim 9-11, is used for the random fluctuation value of the threshold voltage between the different metal-oxide-semiconductors of test chip, it is characterized in that, may further comprise the steps:
(1) the calibration metal-oxide-semiconductor in the said chip of selection is to form like the described voltage controlled oscillator of one of claim 1-8;
(2) the grid end bias voltage of said calibration metal-oxide-semiconductor is imported in scanning, obtains output frequency F_out and its grid end bias voltage V of the corresponding voltage controlled oscillator of said calibration metal-oxide-semiconductor
CalibFunctional relation: F_out=f (V
Calib);
(3) N the metal-oxide-semiconductor as measured device in the said chip of selection is to form like the described voltage controlled oscillator of one of claim 1-8;
(4) the grid end with said N metal-oxide-semiconductor is biased voltage V
CCN, make this metal-oxide-semiconductor work in sub-threshold region;
(5) according to the output frequency F_outN of the corresponding voltage controlled oscillator of said N metal-oxide-semiconductor, with said functional relation F_out=f (V
Calib) inverse function V
Calib=f
-1(F_out) obtain V
CalibN, wherein, V
CalibNWhen the output frequency of representing the voltage controlled oscillator that said calibration metal-oxide-semiconductor is corresponding is F_outN, the voltage of the required biasing of grid end of said calibration metal-oxide-semiconductor;
(6) pass through V
CalibNBe biased voltage V with the grid end of said N metal-oxide-semiconductor
CCNBetween difference, draw the random fluctuation value △ V of the threshold voltage between said N metal-oxide-semiconductor and the said calibration metal-oxide-semiconductor
THN
Wherein, N is the integer more than or equal to 1.
13. method of testing as claimed in claim 12 is characterized in that, when N changed, repeating said steps (3) was to step (6).
14. method of testing as claimed in claim 13 is characterized in that, when repeating said step (4), the grid end of each metal-oxide-semiconductor is biased voltage V at every turn
CCNBe set to identical.
15., it is characterized in that said calibration metal-oxide-semiconductor is through confirm in a plurality of metal-oxide-semiconductors in said chip at random like the described method of testing of one of claim 12-14.
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