CN102655410B - Voltage controlled oscillator, and test system and test method for detecting technological fluctuation - Google Patents
Voltage controlled oscillator, and test system and test method for detecting technological fluctuation Download PDFInfo
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Abstract
The invention belongs to the technical field of microelectronics, and in particular relates to a VCO (voltage controlled oscillator), and a test system and a test method for detecting technological fluctuation. The VCO comprises a ring oscillator and a current controlled MOS (Metal Oxide Semiconductor) tube, wherein the ring oscillator comprises odd number of CMOS (Complementary Metal-Oxide-Semiconductor Transistor) phase inverters; a bias voltage is input at a grid end of the current controlled MOS tube so that the current controlled MOS tube is worked in a sub-threshold region, the current flowing through one CMOS phase inverter is further controlled, and therefore the output frequency of the VCO reflects the threshold voltage of the current controlled MOS tube. The test system is formed based the VCO. The random fluctuation value of the threshold voltage among different MOS tubes inside a chip is tested by using the test method provided by the invention. The VCO has the advantages that a circuit is simple and the digitization is easy to achieve. When the technological fluctuation is tested by using the testing system based on the VCO, the random fluctuation value of the threshold voltage with high sensitivity can be obtained, and the test accuracy is good.
Description
Technical field
The invention belongs to microelectronics technology, relate to the detection of chip technology fluctuation, relate in particular to test macro and method of testing thereof based on voltage controlled oscillator (Voltage Control Oscillator, VCO) for detection of technological fluctuation.
Background technology
Along with the development of microelectronic manufacturing technology, the characteristic size of device is more and more less, and the size of technology generations is also more and more less.Although chip fabrication techniques development, the problem of random technological fluctuation is inevitable, and even its performance impact to chip more and more be can not ignore.
Normally, technological fluctuation is caused by the trickle fabrication error between same batch or between different batches, this fabrication error can cause the slight change on the structural parameters of device equally, for example, MOS(Metal Oxide Semiconductor, Metal-oxide-semicondutor) channel length of pipe, channel doping concentration etc.For metal-oxide-semiconductor, the variation of these structural parameters can be reflected in the threshold voltage (V of metal-oxide-semiconductor
tH) variation on.Therefore, conventionally by measuring the random fluctuation value of the threshold voltage in chip array metal-oxide-semiconductor, thereby reflect the technological fluctuation of chip array.This is the method for the conventional characterization processes fluctuation of industrial quarters, and this method can be used for detecting the random technological fluctuation characteristic of the technological fluctuation of same chip or the technological fluctuation of same batch of chip or different batches chip.
Intel and Purdue University, in the ISSCC International Academic Conference of 2010, disclose a kind of technical scheme of random fluctuation value of test threshold voltage to be entitled as (ISSCC 2010/SESSION 9/DIGITAL CIRCUITS & SENSORS/9.7) in the paper of " Accurate Characterization of Random Process Variations Using a Robust Low-Voltage High-Sensitivity Sensor Featuring Replica-Bias Circuit ".In this technical scheme, by tested metal-oxide-semiconductor, (be also DUT, Device Under Test, measured device) subthreshold current signal is converted to voltage signal output, because subthreshold current and threshold voltage exist more unified functional relation, therefore,, in the situation that the grid end institute bias voltage of tested metal-oxide-semiconductor is certain, its voltage signal of exporting depends on the threshold voltage V that treats test tube strongly
tH.Normally, first select for example, in the metal-oxide-semiconductor array (, it forms by same batch of technique manufacture) of measured tube some as alignment unit, at the calibration voltage V of the grid end upper offset certain limit of this alignment unit
cALIBthereby, and measure output voltage V in this scope interscan
oUT, draw output voltage V
oUTwith calibration voltage V
cALIBbetween function relation curve (V
oUT=f(V
cALIB)).Further, any tested metal-oxide-semiconductor to other, is less than the voltage V of threshold voltage at its grid end upper offset
dDand measure its output voltage V simultaneously
oUT, according to above function relation curve, draw the V of this tested metal-oxide-semiconductor
oUTcalibration voltage V corresponding to alignment unit
cALIB, i.e. f
-1(V
oUT), therefore, the random fluctuation value △ V of the threshold voltage between this tested metal-oxide-semiconductor and alignment unit
tH=f
-1(V
oUT)-V
dD.△ V
tHalso reflected the technological fluctuation between alignment unit and this tested metal-oxide-semiconductor.Similarly, by each by the measurement of metal-oxide-semiconductor, can reflect the technological fluctuation characteristic of this metal-oxide-semiconductor array.
But there is following shortcoming in this method of the propositions such as Intel:
(1) due to output voltage V
oUTgenerally, at 0-0.3V, input voltage is easily interfered and causes V
oUTmeasure inaccurate, so △ V
tHbe difficult to accurately reflect technological fluctuation characteristic;
(2) need to consider the impact of process corner (process conner) fluctuation on test simultaneously, in test circuit, need to design other circuit for process corner compensation;
(3) output voltage V
oUTbe analog signal, the output of this analog signal needs buffer (buffer), and the buffer of introducing can produce error, easily causes V
oUTuntrue.Meanwhile, the circuit of this test integral body is analog circuit, in its technique in early days after prepared formation, is difficult to guarantee that it normally works.
In view of this, be necessary to propose a kind of new method or circuit, carry out the random fluctuation value △ V of Measurement accuracy threshold voltage
tHaccurately to reflect the characteristic of technological fluctuation.
Summary of the invention
The technical problem to be solved in the present invention is, the random fluctuation value △ V of the threshold voltage between Measurement accuracy DUT
tHaccurately to reflect the characteristic of technological fluctuation.
For solving above technical problem, according to an aspect of of the present present invention, provide a kind of voltage controlled oscillator.Voltage controlled oscillator comprises ring oscillator and Flow Control metal-oxide-semiconductor, described ring oscillator comprises a plurality of CMOS inverters, wherein, at the grid end bias voltage of described Flow Control metal-oxide-semiconductor so that its electric current that works in sub-threshold region and then control the CMOS inverter described in one of them of flowing through, so that the output frequency of described voltage controlled oscillator reflects the threshold voltage of described Flow Control metal-oxide-semiconductor.
Preferably, described ring oscillator comprises three or three above odd number CMOS inverters.
Particularly, described in each, CMOS inverter output is connected to the input of another CMOS inverter.
According to the embodiment of voltage controlled oscillator provided by the invention, wherein, described Flow Control metal-oxide-semiconductor is PMOS pipe and/or NMOS pipe.
Particularly, the output frequency of described voltage controlled oscillator and the functional relation of subthreshold current that works in the described Flow Control metal-oxide-semiconductor of sub-threshold region:
F_out=I
sub/Q
Wherein, the output frequency that F_out is described voltage controlled oscillator, I
subfor the subthreshold current of described Flow Control metal-oxide-semiconductor, Q is the total charge dosage that frequency output terminal parasitic capacitance is stored.
Particularly, the functional relation of the threshold voltage of the output frequency of described voltage controlled oscillator and described Flow Control metal-oxide-semiconductor and grid end bias voltage:
F_out=F（V
CC ︱V
TH）
Wherein, the output frequency that F_out is described voltage controlled oscillator, V
tHfor the threshold voltage of described Flow Control metal-oxide-semiconductor, V
cCgrid end bias voltage for described Flow Control metal-oxide-semiconductor.
Particularly, in threshold voltage one timing of described Flow Control metal-oxide-semiconductor, by relational expression F_out=F(V
cC ︱v
tH), grid end bias voltage described in scan variations, draws the functional relation of output frequency and grid end bias voltage:
F_out=f（V
CC）
Wherein, the output frequency that F_out is described voltage controlled oscillator, V
tHfor the threshold voltage of described Flow Control metal-oxide-semiconductor, V
cCgrid end bias voltage for described Flow Control metal-oxide-semiconductor.
Preferably, the source/drain terminal of described Flow Control metal-oxide-semiconductor is electrically connected at the source/drain terminal of the PMOS of CMOS inverter described in one of them.
According to another aspect of the present invention, a kind of test macro for detection of technological fluctuation is provided, its random fluctuation value by the threshold voltage between different metal-oxide-semiconductors in test chip detects the technological fluctuation of described chip, described test macro comprise the above and wherein a kind of voltage controlled oscillator, wherein, the arbitrary described metal-oxide-semiconductor in described chip is as the Flow Control metal-oxide-semiconductor of described voltage controlled oscillator.
According to the embodiment of test macro provided by the invention, wherein, described test macro also comprises:
Switch arrays, for the metal-oxide-semiconductor of chip described in gating;
Address decoder, for decoding to Input Address and exporting described switch arrays to; And
Frequency divider.
Preferably, the different metal-oxide-semiconductors in described chip comprise the metal-oxide-semiconductor of calibrating metal-oxide-semiconductor and being used as measured device.In a plurality of metal-oxide-semiconductors of described calibration metal-oxide-semiconductor in described chip, select at random.
Preferably, the different metal-oxide-semiconductors in described chip are manufactured and are formed simultaneously under the same process conditions of setting.
According to of the present invention, provide the method for testing of the test macro described in more than one more on the one hand, for the random fluctuation value of the threshold voltage between the different metal-oxide-semiconductors of test chip, it comprises the following steps:
(1) select calibration metal-oxide-semiconductor in described chip to form foregoing voltage controlled oscillator;
(2) the grid end bias voltage of described calibration metal-oxide-semiconductor is inputted in scanning, draws output frequency F_out and its grid end bias voltage V of the voltage controlled oscillator that described calibration metal-oxide-semiconductor is corresponding
calibfunctional relation: F_out=f(V
calib);
(3) select N the metal-oxide-semiconductor as measured device in described chip, to form foregoing voltage controlled oscillator;
(4) the grid end of described N metal-oxide-semiconductor is biased voltage V
cCN, make this metal-oxide-semiconductor work in sub-threshold region;
(5) according to the output frequency F_outN of voltage controlled oscillator corresponding to described N metal-oxide-semiconductor, with described functional relation F_out=f(V
calib) inverse function V
calib=f
-1(F_out) obtain V
calibN, wherein, V
calibNwhen the output frequency that represents the voltage controlled oscillator that described calibration metal-oxide-semiconductor is corresponding is F_outN, the voltage of the required biasing of grid end of described calibration metal-oxide-semiconductor.
(6) pass through V
calibNbe biased voltage V with the grid end of described N metal-oxide-semiconductor
cCNbetween difference draw the random fluctuation value △ V of the threshold voltage between described N metal-oxide-semiconductor and described calibration metal-oxide-semiconductor
tHN.
Wherein, N is more than or equal to 1 integer.
Particularly, when N changes, repeating said steps (3) is to step (6).
Preferably, while repeating described step (4), the grid end of each metal-oxide-semiconductor is biased voltage V at every turn
cCNbe set to identical.
Preferably, described calibration metal-oxide-semiconductor is by determining at random in a plurality of metal-oxide-semiconductors in described chip.
Technique effect of the present invention is, VCO circuit provided by the invention is simple, and output frequency information can accurately reflect the threshold voltage information of each Flow Control metal-oxide-semiconductor, is easy to Digital Realization.And use this VCO test macro its while fluctuating for test technology, can obtain the very high threshold voltage random fluctuation value of sensitivity, test accuracy is good.
Accompanying drawing explanation
From following detailed description by reference to the accompanying drawings, will make above and other objects of the present invention and advantage more completely clear, wherein, same or analogous key element adopts identical label to represent.
Fig. 1 is the electrical block diagram of the VCO that provides according to one embodiment of the invention.
Fig. 2 is the electrical block diagram of the VCO that provides according to further embodiment of this invention.
Fig. 3 is the electrical block diagram of the VCO that provides according to yet another embodiment of the invention.
Fig. 4 is the test system module structural diagrams for detection of technological fluctuation providing according to one embodiment of the invention.
Fig. 5 is the physical circuit schematic diagram of the VCO in the test macro shown in Fig. 4.
Fig. 6 is the method for testing diagram of test macro of the present invention when for detection of technological fluctuation.
Embodiment
What introduce below is some in a plurality of possibility embodiment of the present invention, aims to provide basic understanding of the present invention, is not intended to confirm key of the present invention or conclusive key element or limits claimed scope.Easily understand, according to technical scheme of the present invention, do not changing under connotation of the present invention other implementation that one of ordinary skill in the art can propose mutually to replace.Therefore, following embodiment and accompanying drawing are only the exemplary illustrations to technical scheme of the present invention, and should not be considered as of the present invention all or be considered as the restriction of technical solution of the present invention or restriction.
In the present invention, voltage controlled oscillator (Voltage Control Oscillator, VCO) is a kind of its output frequency (F_out-) and the oscillation of a function device of input voltage (V controls voltage), in VCO, has F_out-=f(V) functional relation.
The electrical block diagram of the VCO providing according to one embodiment of the invention is provided.The VCO of this embodiment can be specifically for measuring the random fluctuation value △ V of the threshold voltage between different metal-oxide-semiconductors
tHto detect the characteristic of its technological fluctuation.As shown in Figure 1, this VCO regulates the ring oscillator (Ring Oscillator) of oscillator frequency, VCO to comprise ring oscillator part and Flow Control metal-oxide-semiconductor 312(M0 based on transmission delay).Wherein ring oscillator part is connected in series formation loop by odd number (being more than or equal to 3) inverter in this embodiment and realizes.Particularly, the output of each inverter in 4 inverters 341 and 1 CMOS inverter 342 is connected to the input of another inverter, and head and the tail are connected in series formation loop successively; Source or drain terminal that wherein the source of one of them metal-oxide-semiconductor (M1) in CMOS inverter 342 or drain terminal are connected in series in Flow Control metal-oxide-semiconductor 312, the source of another metal-oxide-semiconductor (M2) in CMOS inverter 342 or drain terminal input voltage V
dD, therefore, the grid end bias voltage V of Flow Control metal-oxide-semiconductor 312
cCso that Flow Control metal-oxide-semiconductor is while working in sub-threshold region, the electric current of the CMOS inverter 342 of flowing through is to be subject to V
cCinstitute controls.Normally, 4 inverter 341 devices can be also the CMOS inverter identical with 342, just in this embodiment, select 342 conducts and Flow Control metal-oxide-semiconductor 312(input voltage V of CMOS inverter
dDdirection) inverter of series connection; In other embodiments, the source of Flow Control metal-oxide-semiconductor 312 or drain terminal also can be connected in series with source or the drain terminal of any one PMOS pipe in other 4 inverters 341.
The output frequency F_out of this VCO is the total transmission delay that depends on the inverter of series connection.And the voltage V that the voltage-controlled end (being also grid end) of working as Flow Control metal-oxide-semiconductor 312 is inputted
cCwhile being less than the threshold voltage of metal-oxide-semiconductor 312, its electric current flowing through is subthreshold current.Because subthreshold current is conventionally smaller, the inverter 342 connecting for Flow Control metal-oxide-semiconductor 312, its transmission delay depends primarily on Flow Control metal-oxide-semiconductor 312(voltage V
dDm2, M1 to M0 by inverter 342 transmit successively).Therefore, the transmission delay of CMOS inverter 342 is far longer than the transmission delay of other inverter 341, output frequency F_out depends on the transmission delay of CMOS inverter 342 substantially, thereby be also the subthreshold current information that output frequency F_out can reflect Flow Control metal-oxide-semiconductor 312 substantially, further to have reflected the threshold voltage information of Flow Control metal-oxide-semiconductor 312 simultaneously.
Therefore, at the grid end bias voltage V of metal-oxide-semiconductor 312
cCand V
cCwhile being less than the threshold voltage of opening metal-oxide-semiconductor 312, now metal-oxide-semiconductor 312 will be operated in sub-threshold region.Output frequency F_out depends primarily on V
cCself size and threshold voltage V of metal-oxide-semiconductor 312
tH, depend primarily on threshold voltage V
tHwith V
cCdifference size.
Take VCO embodiment illustrated in fig. 1 as example, biasing V
cCso that Flow Control metal-oxide-semiconductor 312 works in sub-threshold region, now, the subthreshold current I of output frequency F_out and Flow Control metal-oxide-semiconductor 312
subclosely related, can obtain following relational expression:
F_out=I
sub/Q （1）
Wherein Q is the total charge dosage that frequency output terminal parasitic capacitance is stored, I
subsubthreshold current for Flow Control metal-oxide-semiconductor 312.
Further, known according to the computing formula of the subthreshold current of metal-oxide-semiconductor 312, I
subthreshold voltage V with metal-oxide-semiconductor 312
tHclosely related, therefore, by relational expression (1), can further draw relational expression:
F_out=F（V
CC ︱V
TH） （2）
Relational expression (2) represents output frequency and variable V
cC, V
tHfunctional relation F.For this embodiment, Flow Control metal-oxide-semiconductor 312 is NMOS pipe, V
tHbe greater than 0, therefore, V
cCcan be biased in 0 to V
tHbetween, F_out depends primarily on threshold voltage V
tHwith V
cCdifference size.
In relational expression (2), if the control voltage V of input
cCwhile changing (metal-oxide-semiconductor 312 is operated in sub-threshold region to be changed), for example, V is inputted in scanning within the specific limits
cC, can be from obtaining different output frequency F_out, thereby, V
cCcan formation function relation curve with F_out, be also F_out=f(V
cC) (be also in relational expression (2), V
tHthe functional relation obtaining that develops during for constant).Now, Flow Control metal-oxide-semiconductor 312 can be as calibration metal-oxide-semiconductor, and in this embodiment, calibration metal-oxide-semiconductor can be selected at random.
When Flow Control metal-oxide-semiconductor 312 is expressed as different metal-oxide-semiconductors, even can produce fluctuation because technological fluctuation factor causes the threshold voltage of the different metal-oxide-semiconductors of same batch of manufacture, therefore, the threshold voltage of each metal-oxide-semiconductor is not definitely to equate yet.The control voltage V inputting on different metal-oxide-semiconductors
cCin constant situation, F_out may be due to the random fluctuation of its threshold voltage (V now
tHwith V
cCdifference size also change) and change (according to relation (2)).
Known in sum, the output frequency F_out of VCO of the present invention can effectively reflect the threshold voltage V of Flow Control metal-oxide-semiconductor 312
tHand grid terminal voltage V
cC, while testing for different Flow Control metal-oxide-semiconductors, can accurately reflect the random fluctuation value △ V of the threshold voltage between same Flow Control metal-oxide-semiconductor
tHthereby, accurately reflecting the characteristic of technological fluctuation, its concrete method of testing, will describe below in detail step by step.And output frequency F_out is easy to Digital Realization, output signal is accurate.
It should be noted that, the concrete form of ring oscillator is not limited by specific embodiment shown in Fig. 1, and for example, the even number of inverters series connection that its certain one-level paraphase of can also serving as reasons connects forms.In addition, in this embodiment, the number of inverter 341 is to be more than or equal to 2 even number, and for example it can be 16.
In embodiment illustrated in fig. 1, Flow Control metal-oxide-semiconductor 312 is NMOS pipe.Similarly, the ring oscillator in VCO of the present invention can also be connected with PMOS or can also be connected with NMOS with PMOS simultaneously.
The electrical block diagram of the VCO providing according to further embodiment of this invention is provided.In this embodiment, the ring oscillator in VCO is connected with PMOS, and it is for measuring the threshold voltage random fluctuation value of PMOS pipe.Than VCO embodiment illustrated in fig. 1, its difference is only the Flow Control metal-oxide-semiconductor 312 of NMOS to replace with the Flow Control metal-oxide-semiconductor 313 of PMOS, and the operation principle of its basic functional principle and VCO embodiment illustrated in fig. 1 is similar, and this is no longer going to repeat them.
The electrical block diagram of the VCO providing according to yet another embodiment of the invention is provided.In this embodiment, the ring oscillator in VCO is connected with NMOS with PMOS simultaneously, and it can be for measuring the threshold voltage random fluctuation value of PMOS pipe, also can be for measuring the threshold voltage random fluctuation value of NMOS pipe.Than VCO embodiment illustrated in fig. 1, its difference is only to increase the Flow Control metal-oxide-semiconductor 313 of PMOS, and the operation principle of its basic functional principle and VCO embodiment illustrated in fig. 1 is similar, and this is no longer going to repeat them.
The modular structure schematic diagram of the test macro for detection of technological fluctuation providing according to one embodiment of the invention is provided.As previously discussed, VCO provided by the invention can be for detection of technological fluctuation characteristic.Test macro of the present invention is to form based on VCO of the present invention.In this embodiment, the VCO of test macro 300 based on shown in Fig. 1 schematically describes.
Consult Fig. 4, test macro 300 is for detection of the technological fluctuation of chip 310, and its random fluctuation value by the threshold voltage between different metal-oxide-semiconductors in test chip 310 is carried out the technological fluctuation of detection chip 310.Chip 310 comprises as the calibration metal-oxide-semiconductor 311 of alignment unit and as the DUT array 312 of tested metal-oxide-semiconductor (being measured device).Preferably, test macro 300 also comprises switch arrays 320, address decoder 330, ring oscillator (RO) 340 and frequency divider 350.Between ring oscillator (RO) 340 and tested chip 310, connect switch arrays 320 are set, particularly, a switching device (for example metal-oxide-semiconductor) in the corresponding switch arrays 320 of each metal-oxide-semiconductor of chip 310, thereby, can pass through switch arrays 320, at least one metal-oxide-semiconductor in selection chip 310 is connected with a CMOS inverter in RO340 and is formed the VCO shown in Fig. 1.Address decoder 330 is from outside receiver address signal, and exports decoded signal to switch arrays 320, that switch arrays 320 can be controlled switching device conducting wherein according to the signal of input or turn-off, thereby realizes the gating of tested metal-oxide-semiconductor.Therefore, can specifically select the one or more metal-oxide-semiconductors in chip 310 to test.Preferably, the output frequency of RO 340 is exported by frequency divider 350, and frequency divider 350 has is convenient to high-frequency oscillation signal (output signal of RO 340) effect of the medium and low frequency oscillator signal of test with certain multiple frequency division one-tenth.
Figure 5 shows that the physical circuit schematic diagram of the VCO in the test macro shown in Fig. 4.As shown in Figure 5, by the address of decoding, a certain metal-oxide-semiconductor of gating in switch arrays 320, thus choose one of them metal-oxide-semiconductor in chip 310 as Flow Control metal-oxide-semiconductor, jointly form VCO with RO340.
It should be noted that, the form that the address decoder 330 in test macro 300, switch arrays 320, RO340, frequency divider 350 etc. can integrate with same chip together with chip 310 realizes.
Figure 6 shows that the method for testing of test macro of the present invention when for detection of technological fluctuation.Below in conjunction with Fig. 4, Fig. 5 and Fig. 6, illustrate the method for testing of this embodiment.
Step S510, first, the corresponding switching device of gating calibration metal-oxide-semiconductor in switch arrays.
In this step, calibration metal-oxide-semiconductor and tested metal-oxide-semiconductor are that same batch of manufacture forms, and also calibrating metal-oxide-semiconductor and tested metal-oxide-semiconductor is to manufacture and form simultaneously under the same process conditions of setting.Therefore, preferably, can using random mode in chip 310 random one of them metal-oxide-semiconductor of selecting as calibration metal-oxide-semiconductor 311, and if the actual threshold voltage of calibration metal-oxide-semiconductor 311 be V
tH0.By the address of input, control the corresponding switching device of gating switch array 320 alignment metal-oxide-semiconductor, thereby calibration metal-oxide-semiconductor 311 can form VCO as shown in Figure 1 with RO340.
Step S520, the grid end bias voltage V of scanning input calibration metal-oxide-semiconductor
calib, draw the output frequency F_out and the V that calibrate the VCO that metal-oxide-semiconductor is corresponding
calibfunctional relation F_out=f(V
calib).
In this step, preferably, the grid end bias voltage V of calibration metal-oxide-semiconductor
calibbe less than its threshold voltage V
tH0, so that calibration metal-oxide-semiconductor works in sub-threshold region.Thus, can draw F_out and V
calibrelation curve.
Step S530, gating N the corresponding switching device of tested metal-oxide-semiconductor in switch arrays.
In this step, particularly, if comprise M metal-oxide-semiconductor in DUT array, and need to measure the random fluctuation value of the threshold voltage of all M metal-oxide-semiconductor relative calibration MOS unit.Take the initial value of N as 1 being example, by the address of input, control N the corresponding switching device of tested metal-oxide-semiconductor in gating switch array 320, thereby N tested metal-oxide-semiconductor and RO340 can form VCO as shown in Figure 1.The actual threshold voltage of supposing N tested metal-oxide-semiconductor is V
cCN.
Step S540, the grid end of described tested metal-oxide-semiconductor is biased voltage V
cCNso that tested metal-oxide-semiconductor works in sub-threshold region, draw the output frequency F_outN of the VCO that described tested metal-oxide-semiconductor is corresponding.From above, about the operation principle of VCO, F_outN depends primarily on threshold voltage V
tHNwith V
cCNdifference size.In this embodiment, for each tested metal-oxide-semiconductor (along with the variation of N), preferably, its grid end is biased voltage V
cCNbe traditionally arranged to be identical.
Step S550, according to output frequency F_outN, with functional relation F_out=f(V
calib) inverse function V
calib=f
-1(F_out) obtain V
calibN.Wherein, V
calibNreflect VCO corresponding to calibration metal-oxide-semiconductor when output frequency is F_outN, the magnitude of voltage of the required biasing of its grid end.
Step S560, obtains V
calibNwith V
cCNbetween difference, this difference reflects N tested metal-oxide-semiconductor and the threshold voltage random fluctuation value △ V calibrating between metal-oxide-semiconductor
tHN.
In this step, V
calibNwith V
cCNbetween difference be due to this by metal-oxide-semiconductor and calibration the threshold voltage difference that technological fluctuation caused between metal-oxide-semiconductor and further causing.△ V
tHNcan calculate according to following formula:
△V
THN =V
THN—V
TH0=V
CCN—V
calibN （3）
Therefore, can accurately show that this is by the random fluctuation value of threshold voltage between metal-oxide-semiconductor and calibration metal-oxide-semiconductor, thereby accurately reflect that this is by the technological fluctuation characteristic between metal-oxide-semiconductor and calibration metal-oxide-semiconductor.
Step S570, N=N+1, is prepared by metal-oxide-semiconductor for further measuring the next one.
Step S580, whether judgement (N+1) is less than or equal to M, if be judged as "Yes", enters step S530, if be judged as "No", represents that all tested metal-oxide-semiconductor in DUT array is with tested complete.
So far, can obtain each random fluctuation value with respect to the threshold voltage between calibration metal-oxide-semiconductor of M tested metal-oxide-semiconductor in DUT array.According to statistical analysis, can draw the technological fluctuation characteristic of this chip 310.It should be noted that, indirectly, by △ V corresponding to a plurality of tested metal-oxide-semiconductors
tHN, can draw the random fluctuation value of the threshold voltage between any two tested metal-oxide-semiconductors, for example, by the 1st tested metal-oxide-semiconductor of gained and the random fluctuation value △ V of the threshold voltage between calibration metal-oxide-semiconductor
tH1, the threshold voltage between the 2nd tested metal-oxide-semiconductor and calibration metal-oxide-semiconductor random fluctuation value △ V
tH2, (△ V
tH1-△ V
tH2) indirectly draw the random fluctuation value of the threshold voltage between the 1st tested metal-oxide-semiconductor and the 2nd tested metal-oxide-semiconductor.
Above example has mainly illustrated VCO of the present invention, the test macro based on this VCO and method of testing.Although only some of them embodiments of the present invention are described, those of ordinary skills should understand, and the present invention can be within not departing from its purport and scope implements with many other forms.Therefore, the example of showing and execution mode are regarded as illustrative and not restrictive, and in the situation that not departing from spirit of the present invention as defined in appended each claim and scope, the present invention may be contained various modifications and replacement.
Claims (12)
1. a voltage controlled oscillator, it is characterized in that comprising ring oscillator and Flow Control metal-oxide-semiconductor, described ring oscillator comprises a plurality of CMOS inverters, wherein, at the grid end bias voltage of described Flow Control metal-oxide-semiconductor so that its electric current that works in sub-threshold region and then control the described CMOS inverter of flowing through, so that the output frequency of described voltage controlled oscillator reflects the threshold voltage of described Flow Control metal-oxide-semiconductor;
The output frequency of described voltage controlled oscillator with the functional relation of subthreshold current that works in the described Flow Control metal-oxide-semiconductor of sub-threshold region is:
F_out=I
sub/Q
The functional relation of the threshold voltage of the output frequency of described voltage controlled oscillator and described Flow Control metal-oxide-semiconductor and grid end bias voltage is:
F_out=F（V
CC ︱V
TH）
In threshold voltage one timing of described Flow Control metal-oxide-semiconductor, by relational expression F_out=F(V
cC ︱v
tH), grid end bias voltage described in scan variations, the functional relation that obtains output frequency and grid end bias voltage is:
F_out=f（V
CC）
Wherein, the output frequency that F_out is described voltage controlled oscillator, I
subfor the subthreshold current of described Flow Control metal-oxide-semiconductor, Q is the total charge dosage that frequency output terminal parasitic capacitance is stored; V
cCgrid end bias voltage for described Flow Control metal-oxide-semiconductor; V
tHthreshold voltage for described Flow Control metal-oxide-semiconductor.
2. voltage controlled oscillator as claimed in claim 1, is characterized in that, described ring oscillator comprises three or three above odd number CMOS inverters.
3. voltage controlled oscillator as claimed in claim 1 or 2, is characterized in that, described in each, CMOS inverter output is connected to the input of CMOS inverter described in another.
4. voltage controlled oscillator as claimed in claim 3, is characterized in that, described Flow Control metal-oxide-semiconductor is PMOS pipe and/or NMOS pipe.
5. voltage controlled oscillator as claimed in claim 1, is characterized in that, source/drain terminal correspondence of described Flow Control metal-oxide-semiconductor is electrically connected at the source/drain terminal of the PMOS of CMOS inverter described in one of them.
6. the test macro for detection of technological fluctuation of the voltage controlled oscillator based on as described in any one in claim 1-5, its random fluctuation value by the threshold voltage between different metal-oxide-semiconductors in test chip detects the technological fluctuation of described chip, it is characterized in that, described test macro comprises the voltage controlled oscillator as described in any one in claim 1-5, wherein, the arbitrary metal-oxide-semiconductor in described chip is as the Flow Control metal-oxide-semiconductor of described voltage controlled oscillator.
7. test macro as claimed in claim 6, is characterized in that, described test macro also comprises:
Switch arrays, for the metal-oxide-semiconductor of chip described in gating;
Address decoder, for decoding to Input Address and exporting described switch arrays to; And
Frequency divider.
8. the test macro as described in claim 6 or 7, is characterized in that, in described chip, different metal-oxide-semiconductors comprise the metal-oxide-semiconductor of calibrating metal-oxide-semiconductor and being used as measured device;
In a plurality of metal-oxide-semiconductors of described calibration metal-oxide-semiconductor in described chip, select at random.
9. a method of testing for the test macro based on as described in one of claim 6-8, the random fluctuation value for the threshold voltage between the different metal-oxide-semiconductors of test chip, is characterized in that, comprises the following steps:
(1) select calibration metal-oxide-semiconductor in described chip to form the voltage controlled oscillator as described in one of claim 1-5;
(2) the grid end bias voltage of described calibration metal-oxide-semiconductor is inputted in scanning, obtains output frequency F_out and its grid end bias voltage V of the voltage controlled oscillator that described calibration metal-oxide-semiconductor is corresponding
calibfunctional relation: F_out=f(V
calib);
(3) select N the metal-oxide-semiconductor as measured device in described chip, to form the voltage controlled oscillator as described in one of claim 1-8;
(4) the grid end of described N metal-oxide-semiconductor is applied to bias voltage V
cCN, make this metal-oxide-semiconductor work in sub-threshold region;
(5) according to the output frequency F_outN of voltage controlled oscillator corresponding to described N metal-oxide-semiconductor, with described functional relation F_out=f(V
calib) inverse function V
calib=f
-1(F_out) obtain V
calibN, wherein, V
calibNwhen the output frequency that represents the voltage controlled oscillator that described calibration metal-oxide-semiconductor is corresponding is F_outN, the voltage of the required biasing of grid end of described calibration metal-oxide-semiconductor;
(6) pass through V
calibNthe bias voltage V applying with described N metal-oxide-semiconductor
cCNbetween difference, draw the random fluctuation value △ V of the threshold voltage between described N metal-oxide-semiconductor and described calibration metal-oxide-semiconductor
tHN;
Wherein, N is more than or equal to 1 integer.
10. method of testing as claimed in claim 9, is characterized in that, when N changes, repeating said steps (3) is to step (6).
11. method of testings as claimed in claim 9, is characterized in that, while repeating described step (4), by the grid end bias voltage V of each metal-oxide-semiconductor at every turn
cCNbe set to identical.
12. method of testings as described in one of claim 9-11, is characterized in that, described calibration metal-oxide-semiconductor is by determining at random in a plurality of metal-oxide-semiconductors in described chip.
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| CN103852701B (en) * | 2012-12-04 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | The method of testing of MOS transistor test circuit and correspondence |
| CN103856207A (en) * | 2012-12-06 | 2014-06-11 | 艾尔瓦特集成电路科技（天津）有限公司 | Electrical level switching circuit and electrical level switching method |
| CN104101827B (en) | 2014-06-25 | 2016-08-31 | 东南大学 | A kind of process corner detection circuit based on self-timing oscillation rings |
| CN105353288B (en) * | 2014-08-19 | 2018-07-27 | 龙芯中科技术有限公司 | Transistor technology surge detection system and detection method |
| CN105842604B (en) * | 2015-01-13 | 2019-02-26 | 复旦大学 | Integrated circuit back-end technological fluctuation detection circuit and detection method |
| CN106655741B (en) * | 2016-08-29 | 2019-03-08 | 北京中电华大电子设计有限责任公司 | A kind of power isolation circuit applied to real random number generator |
| CN108508340B (en) * | 2017-02-24 | 2021-02-02 | 中芯国际集成电路制造(上海)有限公司 | Process corner detection method of MOS (Metal oxide semiconductor) tube |
| CN109581196B (en) * | 2018-12-26 | 2021-06-01 | 北京无线电计量测试研究所 | Chip comprising process corner detection circuit and detection method |
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