CN102655096A - 芯片封装方法 - Google Patents

芯片封装方法 Download PDF

Info

Publication number
CN102655096A
CN102655096A CN201110056829XA CN201110056829A CN102655096A CN 102655096 A CN102655096 A CN 102655096A CN 201110056829X A CN201110056829X A CN 201110056829XA CN 201110056829 A CN201110056829 A CN 201110056829A CN 102655096 A CN102655096 A CN 102655096A
Authority
CN
China
Prior art keywords
chip
bearing unit
chip bearing
packaging method
ground loop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201110056829XA
Other languages
English (en)
Inventor
林昌志
徐守谦
叶国裕
苏峻兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Powertech Technology Inc
Original Assignee
Powertech Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powertech Technology Inc filed Critical Powertech Technology Inc
Priority to CN201110056829XA priority Critical patent/CN102655096A/zh
Publication of CN102655096A publication Critical patent/CN102655096A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

本发明是一种芯片封装方法,其通过使接地环直接或间接露出于封装材料,再形成与接地环电性连接的导电薄膜以形成电磁波屏蔽,进而减少外部的电磁干扰。此外,本发明可大量形成封装结构的导电薄膜,因此可减少制造工艺的复杂度及成本。

Description

芯片封装方法
技术领域
本发明是关于一种芯片封装方法,尤其是关于一种形成与接地环电性连接的导电薄膜的芯片封装方法。
背景技术
目前随着电子系统变得越来越小,以及系统内电子构件的密度越来越大,因此容易产生系统内的电磁干扰(electromagnetic interference,EMI)。此外,已知部分封装结构,例如射频芯片(radio frequency,RF)封装结构容易受电磁干扰影响。因此需要发展可减少电磁干扰的影响的方法及设备,以减少高密度电子系统的电磁干扰加乘效应并避免系统的效能下降或是产生错误。
目前已有设计可遮蔽电磁的外罩式阻绝结构,以减少电磁干扰。然而额外设置外罩式阻绝结构不仅增加成本,也增加制造工艺的复杂度。
综合上述,目前仍需要发展一种新的减少电磁干扰的影响的芯片封装方法。
发明内容
本发明的目的是提供一种芯片封装方法,采用该方法可减少电磁干扰的影响并降低制造工艺的复杂度和成本。
依据本发明的一实施例,一种芯片封装方法,包括下列步骤:提供一芯片承载装置,其具有多个芯片承载单元阵列设置于其上,其中芯片承载单元具有一接地环,其设置于芯片承载单元的一上表面;分别设置一芯片于每一芯片承载单元之上表面并与其电性连接;以一封装材料覆盖每一芯片承载单元的接地环及芯片;移除一部分的封装材料以露出接地环的一部分;形成一导电薄膜,以覆盖封装材料及露出的接地环;以及切单芯片承载装置,以得到独立分隔的每一芯片承载单元。
依据本发明的另一实施例,一种芯片封装方法,包括下列步骤:提供一芯片承载装置,其具有多个芯片承载单元阵列设置于其上,其中一芯片承载单元具有一接地环,其设置于芯片承载单元的一上表面,每一芯片承载单元的接地环之间通过一导线彼此电性连结;分别设置一芯片于每一芯片承载单元之上表面并与其电性连接;以一封装材料覆盖每一芯片承载单元的接地环、导线及芯片;切单芯片承载装置,以得到独立分隔的每一芯片承载单元,并露出导线的一部分;以及形成一导电薄膜,以覆盖封装材料及露出的导线。
本发明的有益效果是:本发明通过形成与接地环电性连接的导电薄膜以形成电磁波屏蔽,可减少外部的电磁干扰;本发明可大量形成封装结构的导电薄膜,因此可减少制造工艺的复杂度及成本。
本发明上述及其它态样、特点及优点可由附图及实施例的说明而获得更清楚的了解。
附图说明
图1a至图1d为显示依据本发明一实施例的芯片封装方法的侧视图。
图2a至图2c为显示依据本发明另一实施例的芯片封装方法的侧视图。
具体实施方式
请参照图1a至图1d,其为侧视图显示依据本发明一实施例的芯片封装方法。首先提供一芯片承载装置1,其具有多个芯片承载单元2阵列设置于其上。举例而言,芯片承载装置1可为一封装基板、一软性基板或一导线架。每一芯片承载单元2具有一接地环21(ground ring),其设置于芯片承载单元2的一上表面。分别将一芯片3设置于每一芯片承载单元2的上表面并与其电性连接。芯片3与芯片承载单元2可包括打线接合或覆晶接合。
在一实施例中,接地环21环设于芯片3的外围,并电性连接至芯片3的接地垫(ground pad,图中未示)以使芯片3达到接地的作用。其中,接地环21的形状可为连续或不连续。其中,不连续的接地环21指的是利用绿漆或是阻隔物质隔绝接地环21,藉以增加芯片3的接合面积以及接合强度。芯片3可以接地垫与接地环21电性连接,因此部分遮蔽接地环21,或者芯片3可以通过打线与接地环21电性连接,因此未遮蔽接地环21。
如图1a所示,每一芯片承载单元2的接地环21及芯片3由一封装材料4覆盖。封装材料4可为一般常用于封装的材料,例如环氧树脂,并加热使其固化。
每一芯片承载单元2还包含多个焊球22,其可通过植球方法设置于芯片承载单元2的一下表面。接地环21与焊球22电性连接。其中,接地环21与焊球22是通过一通孔与焊球22电性连接;或者,接地环21与焊球22可通过一盲孔以及芯片承载单元2内部的接地层(图中未示)电性连接。
请参照图1b,将一部分的封装材料4移除以露出接地环21的一部分。移除封装材料4的方法可包括但不限于研磨、切割或切锯。
请参照图1c,接着形成一导电薄膜5,以覆盖封装材料4及露出的接地环21。所形成的导电薄膜5与接地环21电性连接,因此可以与外部的电磁辐射进行接地处理,进而减少外部的电磁干扰。其中,形成导电薄膜5的方法包括但不限于溅镀法、蒸镀法、无电解电镀法、电镀法或涂布法。如图所示,进行溅镀或其它形成导电薄膜5的过程中,可通过真空吸引平台6及吸盘61固定芯片承载装置1。
导电薄膜5的厚度应足以避免芯片3受外部的电磁干扰,并取决于其材料、电阻以及所要达到的遮蔽效果。在一实施例中,导电薄膜5的材质为金属,例如但不限于铜、银、镍、金或其它组合。此外,在另一实施例中,导电薄膜5可为透明,其材质包括但不限于铟锡氧化物。
请参照图1d,接着切单芯片承载装置1,以得到独立分隔的每一芯片承载单元2,并进行封装后段工序,例如检测作业等。
其中,应注明的是芯片承载装置1的切单与形成导电薄膜5的步骤可互为先后。具体说,在一实施例的中,可以先形成导电薄膜5,再进行芯片承载装置1的切单;在另一实施例的中,可以先进行芯片承载装置1的切单,再形成导电薄膜5。
请继续参照图2a至2c,其为侧视图显示依据本发明另一实施例的芯片封装方法。在另一实施例的中,提供一芯片承载装置1。分别将一芯片3设置于每一芯片承载单元2的上表面并与其电性连接。封装材料4覆盖每一芯片承载单元2的接地环21、导线7及芯片3。
其中,相较于图1a,任两相邻的芯片承载单元2的接地环21之间可通过导线7电性连接彼此电性连结。其中导线7可以弧型的打线方式电性连接(如图所示),或者导线7可以设置于芯片承载单元2的上表面或是内部(本图未示)以达成与接地环21的电性连接。
请参照图2b,对芯片承载装置1进行切单,以得到独立分隔的每一芯片承载单元2,并露出导线7的一部分;并且在图2c,形成一导电薄膜5,以覆盖封装材料4及露出的导线7。其中,此实施例的实施方式与前述实施例相同,因此不再赘述。
综合上述,本发明通过使接地环直接或间接露出于封装材料,再形成与接地环电性连接的导电薄膜,藉以与外部的电磁辐射进行接地处理以形成电磁波屏蔽,进而减少外部的电磁干扰。此外,本发明可大量形成封装结构的导电薄膜,因此可减少制造工艺的复杂度及成本。
以上所述的实施例仅是为说明本发明的技术思想及特点,其目的在使熟悉本技术的人员能够了解本发明的内容并据以实施,当不能以其限定本发明的专利范围,即凡是根据本发明所揭示的精神所作的均等变化或修饰,仍应涵盖在本发明的专利范围内。

Claims (16)

1.一种芯片封装方法,其特征在于,包含下列步骤:
提供一芯片承载装置,其具有多个芯片承载单元阵列设置于其上,其中该芯片承载单元具有一接地环,其设置于该芯片承载单元的一上表面;
分别设置一芯片于这些芯片承载单元的每一个的该上表面并与其电性连接;
以一封装材料覆盖这些芯片承载单元的每一个的该接地环及该芯片;
移除一部分的该封装材料以露出该接地环的一部分;
形成一导电薄膜,以覆盖该封装材料及露出的该接地环;以及
切单该芯片承载装置,以得到独立分隔的这些芯片承载单元的每一个。
2.根据权利要求1所述的芯片封装方法,其特征在于,该芯片与该芯片所设置的该芯片承载单元的电性连接方式包括打线接合或覆晶接合。
3.根据权利要求1所述的芯片封装方法,其特征在于,该芯片承载装置包括一封装基板、一软性基板或一导线架。
4.根据权利要求1所述的芯片封装方法,其特征在于,形成该导电薄膜的方法包括溅镀法、蒸镀法、无电解电镀法、电镀法或涂布法。
5.根据权利要求1所述的芯片封装方法,其特征在于,该芯片部分遮蔽该接地环。
6.根据权利要求1所述的芯片封装方法,其特征在于,这些芯片承载单元的每一个还包含多个焊球,其设置于该芯片承载单元的一下表面。
7.根据权利要求6所述的芯片封装方法,其特征在于,该接地环与这些焊球是通过一通孔或一盲孔电性连结。
8.一种芯片封装方法,其特征在于,包含下列步骤:
提供一芯片承载装置,其具有多个芯片承载单元阵列设置于其上,其中每一该芯片承载单元具有一接地环,其设置于该芯片承载单元的一上表面,任两相邻的该芯片承载单元的该接地环之间通过一导线彼此电性连结;
分别设置一芯片于这些芯片承载单元的每一个的该上表面并与其电性连接;
以一封装材料覆盖这些芯片承载单元的每一个的该接地环、该导线及该芯片;
切单该芯片承载装置,以得到独立分隔的这些芯片承载单元的每一个,并露出该导线的一部分;以及
形成一导电薄膜,以覆盖该封装材料及露出的该导线。
9.根据权利要求8所述的芯片封装方法,其特征在于,该芯片与该芯片所设置的该芯片承载单元的电性连接方式包括打线接合或覆晶接合。
10.根据权利要求8所述的芯片封装方法,其特征在于,该芯片承载装置包括一封装基板、一软性基板或一导线架。
11.根据权利要求8所述的芯片封装方法,其特征在于,形成该导电薄膜的方法包括溅镀法、蒸镀法、无电解电镀法、电镀法或涂布法。
12.根据权利要求8所述的芯片封装方法,其特征在于,该芯片部分遮蔽该接地环。
13.根据权利要求8所述的芯片封装方法,其特征在于,这些芯片承载单元的每一个还包含多个焊球,其设置于该芯片承载单元的一下表面。
14.根据权利要求13所述的芯片封装方法,其特征在于,该接地环与这些焊球是通过一通孔或一盲孔电性连结。
15.根据权利要求8所述的芯片封装方法,其特征在于,该导线是以弧型打线方式电性连接这些芯片承载单元的每一个的该接地环。
16.根据权利要求8所述的芯片封装方法,其特征在于,该导线是设置于该芯片承载单元的该上表面或内部。
CN201110056829XA 2011-03-03 2011-03-03 芯片封装方法 Pending CN102655096A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110056829XA CN102655096A (zh) 2011-03-03 2011-03-03 芯片封装方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110056829XA CN102655096A (zh) 2011-03-03 2011-03-03 芯片封装方法

Publications (1)

Publication Number Publication Date
CN102655096A true CN102655096A (zh) 2012-09-05

Family

ID=46730702

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110056829XA Pending CN102655096A (zh) 2011-03-03 2011-03-03 芯片封装方法

Country Status (1)

Country Link
CN (1) CN102655096A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105321933A (zh) * 2014-08-01 2016-02-10 乾坤科技股份有限公司 具有顺形电磁屏蔽结构的半导体封装件及其制造方法
CN107342279A (zh) * 2017-06-08 2017-11-10 唯捷创芯(天津)电子技术股份有限公司 一种防电磁干扰的射频模块及其实现方法
WO2022037147A1 (zh) * 2020-08-17 2022-02-24 江苏长电科技股份有限公司 扇出型封装结构及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492194B1 (en) * 1999-10-15 2002-12-10 Thomson-Csf Method for the packaging of electronic components
TW200847383A (en) * 2007-05-30 2008-12-01 Advanced Semiconductor Eng EMI shielded semiconductor package and method for manufacturing the same
TW200913194A (en) * 2007-09-12 2009-03-16 Advanced Semiconductor Eng Semiconductor package and manufacturing method thereof
US20090194852A1 (en) * 2008-02-05 2009-08-06 Chi-Tsung Chiu Semiconductor device packages with electromagnetic interference shielding
JP2010010441A (ja) * 2008-06-27 2010-01-14 Murata Mfg Co Ltd 回路モジュールの製造方法および回路モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492194B1 (en) * 1999-10-15 2002-12-10 Thomson-Csf Method for the packaging of electronic components
TW200847383A (en) * 2007-05-30 2008-12-01 Advanced Semiconductor Eng EMI shielded semiconductor package and method for manufacturing the same
TW200913194A (en) * 2007-09-12 2009-03-16 Advanced Semiconductor Eng Semiconductor package and manufacturing method thereof
US20090194852A1 (en) * 2008-02-05 2009-08-06 Chi-Tsung Chiu Semiconductor device packages with electromagnetic interference shielding
JP2010010441A (ja) * 2008-06-27 2010-01-14 Murata Mfg Co Ltd 回路モジュールの製造方法および回路モジュール

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105321933A (zh) * 2014-08-01 2016-02-10 乾坤科技股份有限公司 具有顺形电磁屏蔽结构的半导体封装件及其制造方法
CN107342279A (zh) * 2017-06-08 2017-11-10 唯捷创芯(天津)电子技术股份有限公司 一种防电磁干扰的射频模块及其实现方法
WO2022037147A1 (zh) * 2020-08-17 2022-02-24 江苏长电科技股份有限公司 扇出型封装结构及其制造方法

Similar Documents

Publication Publication Date Title
US11784136B2 (en) Integrated module with electromagnetic shielding
US8368185B2 (en) Semiconductor device packages with electromagnetic interference shielding
US10529670B2 (en) Shielded package with integrated antenna
US9269673B1 (en) Semiconductor device packages
US8614120B2 (en) Semiconductor chip package and method of making same
US7989928B2 (en) Semiconductor device packages with electromagnetic interference shielding
JP5276169B2 (ja) 一体化された干渉シールドを備えた半導体パッケージおよびその製造方法
US8350367B2 (en) Semiconductor device packages with electromagnetic interference shielding
US9137934B2 (en) Compartmentalized shielding of selected components
US8030750B2 (en) Semiconductor device packages with electromagnetic interference shielding
CN106816431B (zh) 一种电磁屏蔽封装结构及其制造方法
US20180301420A1 (en) Semiconductor device and manufacturing method thereof
US20120052630A1 (en) Method for manufacturing chip package
CN102339809B (zh) 一种多圈引脚排列四边扁平无引脚封装及制造方法
CN109585421B (zh) 带有电磁屏蔽的双面模块及其制造方法
CN106449440B (zh) 一种具有电磁屏蔽功能的封装结构的制造方法
CN105870104A (zh) 一种具有电磁屏蔽功能的封装结构
JP6716363B2 (ja) 半導体パッケージ及びその製造方法
JP2010027996A (ja) 高周波モジュール及びその製造方法
CN102655096A (zh) 芯片封装方法
CN106340506A (zh) 一种半导体封装结构及其制作方法
CN104409447A (zh) 包含嵌入式电容器的半导体封装件及其制备方法
US20200303318A1 (en) Shielded electronic modules and methods of forming the same utilizing plating and double-cut singulation
CN105720021B (zh) 集成电路封装件及其制造方法
JP2020088373A (ja) 半導体パッケージ及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120905