CN102650711B - 一种基于表面等离子体的波导光耦合器及其制备工艺 - Google Patents
一种基于表面等离子体的波导光耦合器及其制备工艺 Download PDFInfo
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Abstract
一种基于表面等离子体的波导光耦合器及其制备工艺。首先在半导体硅（Si）上制备氧化锌（ZnO）薄膜，然后在此薄膜上溅射银（Ag）颗粒，从而制备出光耦合器的波导层。通过优化波导结构和几何参数，产生表面等离子体增强效果，从而使光在波导中传播时不再受衍射极限的限制。
Description
技术领域
本专利涉及光学、集成光电子学、纳米材料、纳米加工、纳米测量、仪器科学等多学科交叉的前沿研究领域，具体涉及一种基于表面等离子体的波导光耦合器及其制备工艺。
背景技术
由于受到衍射效应的限制，光波导中传播的光波不能被限制在小于波长量级的横截面内，从而使得相邻光波导元件之间的最小间隙、光波导元件的最大弯曲角度和最大分布密度都受到了限制。
1968年，前苏联物理学家Veselago首次提出了负折射率材料的概念；2001年，Shelby等研制出了负折射率材料，负折射率材料的真实性逐步得到了确认，这为突破光学衍射极限提供了可能。但是把超材料应用到可见光波段，它们要比可见光的波长更小，如果用浸在介质中有限宽度的金属薄膜窄带制成等离子体激元波导，使光沿波导传播，这样金属薄膜就可起到超材料的作用。Bozhevolnyi等对纳米线等离子体光波导进行了研究；2009年，美国University of California，Berkeley的张翔研究组在《Nature》杂志上报道了他们最新研究成果--纳米线等离子体激光器，在减小激光器物理尺寸的同时，减小了光学模态尺寸，从而突破了衍射极限。
发明内容
研制具有表面等离子体增强效果的分光比为50∶50的光耦合器，该光耦合器的波导层由半导体薄膜和金属颗粒共同组成，通过优化波导层结构和几何尺寸，使得光耦合器产生表面等离子体效应。具体如下：
一种基于表面等离子体的光耦合器的波导层制备方法，包括如下步骤：首先在Si基底上通过射频磁控溅射工艺沉积ZnO薄膜，其后通过气相沉积工艺对薄膜在大气气氛下进行热处理，保温后，再通过直流磁控溅射工艺沉积Ag颗粒。
进一步，由溅射时间来控制Ag颗粒的形貌和厚度。
进一步，所述基底为Si基底。
进一步，ZnO薄膜的溅射功率为150W，转速为15r/min，溅射时间为7min，薄膜的厚度为40nm。
进一步，Ag颗粒溅射电流为0.3A，溅射时间为30s。
进一步，所述金属氧化物薄膜为ZnO薄膜。
一种基于表面等离子体的波导光耦合器，包括基底和波导层，而波导层由半导体薄膜及其上的金属颗粒组成。
本发明的有益效果是：
本发明在半导体Si上制备ZnO薄膜，在此薄膜上溅射Ag颗粒从而形成光耦合器的波导层。通过优化波导结构和几何参数，改善波导的光学性能，产生表面等离子体增强效果，从而使光在波导中传播能突破衍射极限。
附图说明
图1（a）为光耦合器的结构示意图。
图1（b）为光耦合器的光波导截面剖视图。
图2为光波导的加工工艺流程示意图。
具体实施方式
图1（a）为光耦合器的结构示意图，图1（b）为光耦合器的光波导剖视图，光波导结构为在基底1上沉积ZnO薄膜2后沉积Ag颗粒3形成。
波导层基底为20mm×20mm的半导体Si（100），将其分别用丙酮、乙醇和去离子水清洗后，用氮气吹干并烘30分钟；ZnO薄膜采用射频磁控溅射工艺制备，本底真空抽至2×10-5Pa，溅射功率为150W，转速为15r/min，溅射时间为7min，ZnO薄膜的厚度为40nm；Ag颗粒采用直流磁控溅射工艺制备，本底真空抽至2×10-5Pa，溅射电流为0.3A，溅射时间为30s。
图2为光波导的加工工艺流程。首先在20mm×20mm的半导体Si（100）基底上通过射频磁控溅射工艺沉积ZnO薄膜，其后通过气相沉积工艺对ZnO薄膜在大气气氛下进行500℃热处理，保温时间为2h，再通过直流磁控溅射工艺沉积Ag颗粒，由溅射时间来控制Ag颗粒的形貌和厚度。
1）光耦合器的波导层制备
在Si基底1上制备一层ZnO薄膜2，然后在此薄膜上溅射Ag颗粒3，通过研究不同厚度的ZnO薄膜以及Ag颗粒密度和尺度不同的情况下光耦合器的光学性能，从而确定波导层的最佳结构和厚度。
2）光耦合器的制备
为了实现50∶50的分光比，通过实验研究不同的耦合区长度和耦合区两路光波导之间的距离，最终确定光耦合器的结构。
Claims (1)
1.一种基于表面等离子体的波导光耦合器的波导层制备方法，其特征在于，包括如下步骤：首先在硅(Si)基底(1)上通过射频磁控溅射工艺沉积金属氧化物薄膜(2)，所述金属氧化物薄膜为ZnO薄膜，金属氧化物薄膜(2)的溅射功率为150W，转速为15r/min，溅射时间为7min，薄膜的厚度为40nm；其后通过气相沉积工艺对薄膜在大气气氛下进行热处理，保温后，再通过直流磁控溅射工艺沉积金属银(Ag)颗粒(3)，由溅射时间来控制Ag颗粒(3)的形貌和厚度，Ag颗粒(3)溅射电流为0.3A，溅射时间为30s。
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