CN102650711B - 一种基于表面等离子体的波导光耦合器及其制备工艺 - Google Patents
一种基于表面等离子体的波导光耦合器及其制备工艺 Download PDFInfo
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- CN102650711B CN102650711B CN201210168742.6A CN201210168742A CN102650711B CN 102650711 B CN102650711 B CN 102650711B CN 201210168742 A CN201210168742 A CN 201210168742A CN 102650711 B CN102650711 B CN 102650711B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims abstract 2
- 229910052709 silver Inorganic materials 0.000 claims abstract 2
- 239000004332 silver Substances 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000001902 propagating effect Effects 0.000 abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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CN201210168742.6A CN102650711B (zh) | 2012-05-28 | 2012-05-28 | 一种基于表面等离子体的波导光耦合器及其制备工艺 |
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CN201210168742.6A CN102650711B (zh) | 2012-05-28 | 2012-05-28 | 一种基于表面等离子体的波导光耦合器及其制备工艺 |
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CN102650711A CN102650711A (zh) | 2012-08-29 |
CN102650711B true CN102650711B (zh) | 2014-01-29 |
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CN104372301B (zh) * | 2014-11-21 | 2017-06-23 | 国家纳米科学中心 | 一种利用射频磁控溅射法制备单分散、尺寸可控纳米银颗粒的方法 |
CN104730621B (zh) * | 2015-03-05 | 2018-05-04 | 湖南大学 | 一种基于金属-介电层-半导体复合纳米结构的光波导分束器的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101885468A (zh) * | 2010-06-30 | 2010-11-17 | 浙江大学 | 一种介质/金属/介质型纳米结构薄膜及其制备方法 |
CN102183816A (zh) * | 2011-04-29 | 2011-09-14 | 上海交通大学 | 阶梯结构的硅基表面等离子体波导的制备方法 |
Family Cites Families (3)
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TWI296044B (en) * | 2005-11-03 | 2008-04-21 | Ind Tech Res Inst | Coupled waveguide-surface plasmon resonance biosensor |
KR100877710B1 (ko) * | 2007-03-14 | 2009-01-09 | 한양대학교 산학협력단 | 표면 플라즈몬 이중 금속 광도파로 |
WO2010088726A1 (en) * | 2009-02-04 | 2010-08-12 | University Of South Australia | Fabrication of nanoparticles on solid surfaces |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101885468A (zh) * | 2010-06-30 | 2010-11-17 | 浙江大学 | 一种介质/金属/介质型纳米结构薄膜及其制备方法 |
CN102183816A (zh) * | 2011-04-29 | 2011-09-14 | 上海交通大学 | 阶梯结构的硅基表面等离子体波导的制备方法 |
Non-Patent Citations (4)
Title |
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C.W.Lai等.Surface-plasmon-mediated emission from metal-capped ZnO thin films.《Applied Physics Letters》.2005,第1-3页. |
Surface-plasmon-mediated emission from metal-capped ZnO thin films;C.W.Lai等;《Applied Physics Letters》;20051231;第251105-1至251105-3页 * |
仇旻.表面等离子体和人工电磁介质纳米光子器件.《光学与光电技术》.2010,第8卷(第3期),第1-5页. |
表面等离子体和人工电磁介质纳米光子器件;仇旻;《光学与光电技术》;20100630;第8卷(第3期);全文 * |
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Effective date of registration: 20240425 Address after: Room 050, F2004, 20th Floor, Building 4-A, Xixian Financial Port, Fengdong New City Energy Jinmao District, Xixian New District, Xi'an City, Shaanxi Province, 710086 Patentee after: Xi'an Mingchuang Zhongce Technology Co.,Ltd. Country or region after: China Address before: 710049 No. 28 West Xianning Road, Shaanxi, Xi'an Patentee before: XI'AN JIAOTONG University Country or region before: China |
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Effective date of registration: 20241211 Address after: Room 8612, 2nd Floor, Building 4, Zhenghe Fourth Road Free Trade Industrial Park, Fengdong New City, Xixian New Area, Xi'an City, Shaanxi Province 710000 Patentee after: Xi'an Mingchuang Zhongyi Technology Co.,Ltd. Country or region after: China Address before: Room 050, F2004, 20th Floor, Building 4-A, Xixian Financial Port, Fengdong New City Energy Jinmao District, Xixian New District, Xi'an City, Shaanxi Province, 710086 Patentee before: Xi'an Mingchuang Zhongce Technology Co.,Ltd. Country or region before: China |