JP2005097693A - 超薄膜の作製方法 - Google Patents
超薄膜の作製方法 Download PDFInfo
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- JP2005097693A JP2005097693A JP2003334683A JP2003334683A JP2005097693A JP 2005097693 A JP2005097693 A JP 2005097693A JP 2003334683 A JP2003334683 A JP 2003334683A JP 2003334683 A JP2003334683 A JP 2003334683A JP 2005097693 A JP2005097693 A JP 2005097693A
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Abstract
【解決手段】 20nm以下の深さの表面領域に対して、100〜300eVの範囲内のエネルギーをもつNeより重い希ガスのイオンを膜堆積後に衝撃させることにより、滑らかな表面の層状構造とその下地層と急峻な界面をもつ薄膜の作製方法を提供する。
【選択図】 図1
Description
2 膜
3 基板
4 イオン衝撃粒子
5 表面拡散
6 ノックオン
7 再スパッタ原子
8 混合領域
9 島構造の膜表面
10 自己陰影効果
11 層構造の膜表面
12 ターゲット
13 スパッタ用イオン源
14 スパッタ用イオン
15 イオン衝撃用イオン源
16 スパッタ原子
Claims (4)
- 20nm以下の深さの表面領域に対して、100〜300eVの範囲内のエネルギーをもつNeより重い希ガスのイオンを膜堆積後に衝撃させることにより、滑らかな表面の層状構造とその下地層と急峻な界面をもつ薄膜の作製方法
- 請求項1の膜堆積方法を繰り返すことで、自己陰影効果を抑えた緻密な構造をもつ薄膜を作製する膜の作製方法
- 請求項1でNeより重い希ガスのイオンを膜の原子数と同量以上衝撃させ、20nm以下の膜厚の範囲で層状構造をもつ超薄膜の作製方法
- 膜厚の制御精度を向上させるために、作製中に膜の抵抗値を測定する機構を設けた請求項1の超薄膜の作製方法
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JP2003334683A JP4336753B2 (ja) | 2003-09-26 | 2003-09-26 | 超薄膜の作製方法 |
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JP2003334683A JP4336753B2 (ja) | 2003-09-26 | 2003-09-26 | 超薄膜の作製方法 |
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JP2005097693A true JP2005097693A (ja) | 2005-04-14 |
JP4336753B2 JP4336753B2 (ja) | 2009-09-30 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007214333A (ja) * | 2006-02-09 | 2007-08-23 | Toshiba Corp | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置 |
CN100365157C (zh) * | 2005-11-11 | 2008-01-30 | 北京工业大学 | 硅基片上制备镧钡锰氧功能薄膜的方法 |
JP2011184706A (ja) * | 2010-03-04 | 2011-09-22 | Konica Minolta Holdings Inc | 成膜方法、及びその成膜方法を用いて製造された薄膜材料 |
US8031443B2 (en) | 2007-03-27 | 2011-10-04 | Kabushiki Kaisha Toshiba | Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element |
US8048492B2 (en) | 2005-12-21 | 2011-11-01 | Kabushiki Kaisha Toshiba | Magnetoresistive effect element and manufacturing method thereof |
US8111489B2 (en) | 2006-07-07 | 2012-02-07 | Kabushiki Kaisha Toshiba | Magneto-resistance effect element |
US8228643B2 (en) | 2008-09-26 | 2012-07-24 | Kabushiki Kaisha Toshiba | Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus |
US8274766B2 (en) | 2006-04-28 | 2012-09-25 | Kabushiki Kaisha Toshiba | Magnetic recording element including a thin film layer with changeable magnetization direction |
US8274765B2 (en) | 2008-09-29 | 2012-09-25 | Kabushiki Kaisha Toshiba | Method of manufacturing magnetoresistive element, magnetoresistive element, magnetic head assembly and magnetic recording apparatus |
JP2013538942A (ja) * | 2010-09-23 | 2013-10-17 | ロールス−ロイス コーポレイション | 環境保護のためのイオン衝撃表面を備えた合金 |
-
2003
- 2003-09-26 JP JP2003334683A patent/JP4336753B2/ja not_active Expired - Fee Related
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100365157C (zh) * | 2005-11-11 | 2008-01-30 | 北京工业大学 | 硅基片上制备镧钡锰氧功能薄膜的方法 |
US8048492B2 (en) | 2005-12-21 | 2011-11-01 | Kabushiki Kaisha Toshiba | Magnetoresistive effect element and manufacturing method thereof |
JP2007214333A (ja) * | 2006-02-09 | 2007-08-23 | Toshiba Corp | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置 |
JP4514721B2 (ja) * | 2006-02-09 | 2010-07-28 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置 |
US7897201B2 (en) | 2006-02-09 | 2011-03-01 | Kabushiki Kaisha Toshiba | Method for manufacturing magnetoresistance effect element |
US8274766B2 (en) | 2006-04-28 | 2012-09-25 | Kabushiki Kaisha Toshiba | Magnetic recording element including a thin film layer with changeable magnetization direction |
US8111489B2 (en) | 2006-07-07 | 2012-02-07 | Kabushiki Kaisha Toshiba | Magneto-resistance effect element |
US8031443B2 (en) | 2007-03-27 | 2011-10-04 | Kabushiki Kaisha Toshiba | Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element |
US8228643B2 (en) | 2008-09-26 | 2012-07-24 | Kabushiki Kaisha Toshiba | Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus |
US8274765B2 (en) | 2008-09-29 | 2012-09-25 | Kabushiki Kaisha Toshiba | Method of manufacturing magnetoresistive element, magnetoresistive element, magnetic head assembly and magnetic recording apparatus |
JP2011184706A (ja) * | 2010-03-04 | 2011-09-22 | Konica Minolta Holdings Inc | 成膜方法、及びその成膜方法を用いて製造された薄膜材料 |
JP2013538942A (ja) * | 2010-09-23 | 2013-10-17 | ロールス−ロイス コーポレイション | 環境保護のためのイオン衝撃表面を備えた合金 |
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