CN102640290B - 自对准碳化物源极/漏极fet - Google Patents
自对准碳化物源极/漏极fet Download PDFInfo
- Publication number
- CN102640290B CN102640290B CN201080054255.6A CN201080054255A CN102640290B CN 102640290 B CN102640290 B CN 102640290B CN 201080054255 A CN201080054255 A CN 201080054255A CN 102640290 B CN102640290 B CN 102640290B
- Authority
- CN
- China
- Prior art keywords
- carbon
- metal carbides
- effect transistor
- field
- transistor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000002086 nanomaterial Substances 0.000 claims abstract description 33
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- 230000005669 field effect Effects 0.000 claims abstract description 18
- 150000001247 metal acetylides Chemical class 0.000 claims description 32
- 238000009413 insulation Methods 0.000 claims description 21
- 229910003460 diamond Inorganic materials 0.000 claims description 10
- 239000010432 diamond Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 239000002194 amorphous carbon material Substances 0.000 claims description 3
- 239000002159 nanocrystal Substances 0.000 claims description 3
- 125000004429 atom Chemical group 0.000 claims 3
- -1 carbon hydrogenated carbon Chemical class 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 229910001573 adamantine Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/627,120 | 2009-11-30 | ||
US12/627,120 US8841652B2 (en) | 2009-11-30 | 2009-11-30 | Self aligned carbide source/drain FET |
PCT/EP2010/066989 WO2011064085A1 (en) | 2009-11-30 | 2010-11-08 | Self aligned carbide source/drain fet |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102640290A CN102640290A (zh) | 2012-08-15 |
CN102640290B true CN102640290B (zh) | 2015-06-17 |
Family
ID=43296934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080054255.6A Active CN102640290B (zh) | 2009-11-30 | 2010-11-08 | 自对准碳化物源极/漏极fet |
Country Status (4)
Country | Link |
---|---|
US (2) | US8841652B2 (zh) |
CN (1) | CN102640290B (zh) |
TW (1) | TWI527220B (zh) |
WO (1) | WO2011064085A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8642996B2 (en) | 2011-04-18 | 2014-02-04 | International Business Machines Corporation | Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates |
US8803129B2 (en) | 2011-10-11 | 2014-08-12 | International Business Machines Corporation | Patterning contacts in carbon nanotube devices |
US9252252B2 (en) * | 2012-05-23 | 2016-02-02 | Ecole polytechnique fédérale de Lausanne (EPFL) | Ambipolar silicon nanowire field effect transistor |
US9524965B2 (en) | 2014-02-12 | 2016-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate structures with various widths and method for forming the same |
US20220102521A1 (en) * | 2020-09-25 | 2022-03-31 | Intel Corporation | Low resistance approaches for fabricating contacts and the resulting structures |
TWI756022B (zh) * | 2021-01-13 | 2022-02-21 | 國家中山科學研究院 | 具超奈米晶體鑽石層電極結構之氮化物半導體元件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7148079B1 (en) * | 2002-11-01 | 2006-12-12 | Advanced Micro Devices, Inc. | Diamond like carbon silicon on insulator substrates and methods of fabrication thereof |
CN101099248A (zh) * | 2005-01-07 | 2008-01-02 | 国际商业机器公司 | 纳米管/纳米线fet的自对准方法 |
Family Cites Families (28)
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DE4323814A1 (de) * | 1992-09-25 | 1994-03-31 | Siemens Ag | MIS-Feldeffekttransistor |
US5559367A (en) * | 1994-07-12 | 1996-09-24 | International Business Machines Corporation | Diamond-like carbon for use in VLSI and ULSI interconnect systems |
JP2000516708A (ja) | 1996-08-08 | 2000-12-12 | ウィリアム・マーシュ・ライス・ユニバーシティ | ナノチューブ組立体から作製された巨視的操作可能なナノ規模の装置 |
KR100239414B1 (ko) * | 1996-11-07 | 2000-01-15 | 김영환 | 반도체 소자의 제조방법 |
US6683783B1 (en) | 1997-03-07 | 2004-01-27 | William Marsh Rice University | Carbon fibers formed from single-wall carbon nanotubes |
JP2003504857A (ja) | 1999-07-02 | 2003-02-04 | プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ | ナノスコピックワイヤを用いる装置、アレイおよびその製造方法 |
US6062931A (en) | 1999-09-01 | 2000-05-16 | Industrial Technology Research Institute | Carbon nanotube emitter with triode structure |
US6923946B2 (en) | 1999-11-26 | 2005-08-02 | Ut-Battelle, Llc | Condensed phase conversion and growth of nanorods instead of from vapor |
DE10134866B4 (de) | 2000-07-18 | 2005-08-11 | Lg Electronics Inc. | Verfahren zum horizontalen Wachsenlassen von Kohlenstoff-Nanoröhren und Feldeffekttransistor, der die durch das Verfahren gewachsenen Kohlenstoff-Nanoröhren verwendet |
US6891227B2 (en) | 2002-03-20 | 2005-05-10 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
US20050093425A1 (en) | 2002-08-01 | 2005-05-05 | Sanyo Electric Co., Ltd | Optical sensor, method of manufacturing and driving an optical sensor, method of detecting light intensity |
US7358121B2 (en) | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
WO2005043639A1 (ja) | 2003-10-30 | 2005-05-12 | Matsushita Electric Industrial Co., Ltd. | 導電性薄膜および薄膜トランジスタ |
DE102004001340A1 (de) | 2004-01-08 | 2005-08-04 | Infineon Technologies Ag | Verfahren zum Herstellen eines Nanoelement-Feldeffektransistors, Nanoelement-Feldeffekttransistor und Nanoelement-Anordnung |
US7330369B2 (en) | 2004-04-06 | 2008-02-12 | Bao Tran | NANO-electronic memory array |
KR20070011550A (ko) | 2004-04-30 | 2007-01-24 | 나노시스, 인크. | 나노와이어 성장 및 획득 시스템 및 방법 |
JP2006245127A (ja) | 2005-03-01 | 2006-09-14 | Toshiba Corp | 半導体装置及びその製造方法 |
US7355247B2 (en) | 2005-03-03 | 2008-04-08 | Intel Corporation | Silicon on diamond-like carbon devices |
JP4823213B2 (ja) * | 2005-03-17 | 2011-11-24 | 富士通株式会社 | 半導体パッケージ、およびその製造方法 |
KR100652410B1 (ko) | 2005-05-07 | 2006-12-01 | 삼성전자주식회사 | 탄소나노튜브의 전기역학적 특성을 이용한 나노 반도체스위치소자 및 그의 제조방법과 탄소나노튜브의 전기역학적특성을 이용한 메모리소자 및 그의 구동방법 |
US7425491B2 (en) | 2006-04-04 | 2008-09-16 | Micron Technology, Inc. | Nanowire transistor with surrounding gate |
US7893476B2 (en) | 2006-09-15 | 2011-02-22 | Imec | Tunnel effect transistors based on silicon nanowires |
JP5098268B2 (ja) | 2006-09-25 | 2012-12-12 | 富士通株式会社 | カーボンナノチューブの成長方法、カーボンナノチューブの構造体及び電界効果型トランジスタ |
US20080128760A1 (en) | 2006-12-04 | 2008-06-05 | Electronics And Telecommunications Research Institute | Schottky barrier nanowire field effect transistor and method for fabricating the same |
US7795070B2 (en) | 2007-03-30 | 2010-09-14 | Texas Instruments Incorporated | Semiconductor device including an amorphous nitrided silicon adhesion layer and method of manufacture therefor |
US7534675B2 (en) | 2007-09-05 | 2009-05-19 | International Business Machiens Corporation | Techniques for fabricating nanowire field-effect transistors |
US7781061B2 (en) * | 2007-12-31 | 2010-08-24 | Alcatel-Lucent Usa Inc. | Devices with graphene layers |
US7858989B2 (en) * | 2008-08-29 | 2010-12-28 | Globalfoundries Inc. | Device and process of forming device with device structure formed in trench and graphene layer formed thereover |
-
2009
- 2009-11-30 US US12/627,120 patent/US8841652B2/en active Active
-
2010
- 2010-11-08 WO PCT/EP2010/066989 patent/WO2011064085A1/en active Application Filing
- 2010-11-08 CN CN201080054255.6A patent/CN102640290B/zh active Active
- 2010-11-12 TW TW099138969A patent/TWI527220B/zh not_active IP Right Cessation
-
2012
- 2012-08-03 US US13/566,050 patent/US8658461B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7148079B1 (en) * | 2002-11-01 | 2006-12-12 | Advanced Micro Devices, Inc. | Diamond like carbon silicon on insulator substrates and methods of fabrication thereof |
CN101099248A (zh) * | 2005-01-07 | 2008-01-02 | 国际商业机器公司 | 纳米管/纳米线fet的自对准方法 |
Also Published As
Publication number | Publication date |
---|---|
US8841652B2 (en) | 2014-09-23 |
US20120302005A1 (en) | 2012-11-29 |
CN102640290A (zh) | 2012-08-15 |
WO2011064085A1 (en) | 2011-06-03 |
US20110127493A1 (en) | 2011-06-02 |
TWI527220B (zh) | 2016-03-21 |
US8658461B2 (en) | 2014-02-25 |
TW201135935A (en) | 2011-10-16 |
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C06 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171114 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171114 Address after: American New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
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TR01 | Transfer of patent right |
Effective date of registration: 20210409 Address after: Hsinchu City, Taiwan, China Patentee after: Taiwan Semiconductor Manufacturing Co.,Ltd. Address before: Grand Cayman Islands Patentee before: GLOBALFOUNDRIES INC. |