CN102634816B - 一种纳米氧化铟锡粉的制备方法 - Google Patents
一种纳米氧化铟锡粉的制备方法 Download PDFInfo
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- CN102634816B CN102634816B CN201110037379.XA CN201110037379A CN102634816B CN 102634816 B CN102634816 B CN 102634816B CN 201110037379 A CN201110037379 A CN 201110037379A CN 102634816 B CN102634816 B CN 102634816B
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- China
- Prior art keywords
- indium oxide
- nano
- preparation
- tin indium
- indium
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- 239000000843 powder Substances 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 title claims abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000003487 electrochemical reaction Methods 0.000 claims abstract description 16
- 238000009461 vacuum packaging Methods 0.000 claims abstract description 14
- 150000003863 ammonium salts Chemical class 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 7
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 6
- 239000002904 solvent Substances 0.000 claims abstract description 5
- 239000012153 distilled water Substances 0.000 claims abstract description 4
- 150000002500 ions Chemical class 0.000 claims abstract description 4
- 239000013077 target material Substances 0.000 claims abstract description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 33
- 229910003437 indium oxide Inorganic materials 0.000 claims description 27
- 239000000075 oxide glass Substances 0.000 claims description 26
- 229910052738 indium Inorganic materials 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 21
- 238000005245 sintering Methods 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 239000008151 electrolyte solution Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims description 5
- 238000007669 thermal treatment Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 claims description 3
- 238000002848 electrochemical method Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 9
- 239000002243 precursor Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 238000009827 uniform distribution Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000047 product Substances 0.000 description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000000975 co-precipitation Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000006258 conductive agent Substances 0.000 description 3
- 229910021397 glassy carbon Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 235000015096 spirit Nutrition 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 241000370738 Chlorion Species 0.000 description 2
- -1 Virahol Chemical class 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- SRUKOJDGOUUFRB-UHFFFAOYSA-N heptylazanium;chloride Chemical compound Cl.CCCCCCCN SRUKOJDGOUUFRB-UHFFFAOYSA-N 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- HWCKGOZZJDHMNC-UHFFFAOYSA-M tetraethylammonium bromide Chemical compound [Br-].CC[N+](CC)(CC)CC HWCKGOZZJDHMNC-UHFFFAOYSA-M 0.000 description 1
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- ALHBQZRUBQFZQV-UHFFFAOYSA-N tin;tetrahydrate Chemical compound O.O.O.O.[Sn] ALHBQZRUBQFZQV-UHFFFAOYSA-N 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Landscapes
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
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CN201110037379.XA CN102634816B (zh) | 2011-02-14 | 2011-02-14 | 一种纳米氧化铟锡粉的制备方法 |
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CN201110037379.XA CN102634816B (zh) | 2011-02-14 | 2011-02-14 | 一种纳米氧化铟锡粉的制备方法 |
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CN102634816A CN102634816A (zh) | 2012-08-15 |
CN102634816B true CN102634816B (zh) | 2014-11-19 |
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CN201110037379.XA Active CN102634816B (zh) | 2011-02-14 | 2011-02-14 | 一种纳米氧化铟锡粉的制备方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107012479B (zh) * | 2017-03-31 | 2019-05-14 | 安徽师范大学 | 一种ito镀膜液的电化学制备方法、一种ito导电玻璃及其制备方法 |
US11441232B2 (en) | 2018-03-07 | 2022-09-13 | King Fahd University Of Petroleum And Minerals | Anodization method for the production of one-dimensional (1D) nanoarrays of tin oxide |
US10443147B1 (en) | 2018-06-06 | 2019-10-15 | King Fahd University Of Petroleum And Minerals | Anodization method for the production of one-dimensional (1D) nanoarrays of indium oxide |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5417816A (en) * | 1992-12-09 | 1995-05-23 | Nikko Kyodo, Ltd. | Process for preparation of indium oxide-tin oxide powder |
CN1827266A (zh) * | 2006-04-10 | 2006-09-06 | 李小毛 | 一种纳米镍粉的制备方法 |
CN101746813A (zh) * | 2009-12-17 | 2010-06-23 | 昆明理工大学 | 铟锡氧化物纳米粉体的制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2736492B2 (ja) * | 1992-12-28 | 1998-04-02 | 株式会社ジャパンエナジー | 酸化インジウム−酸化スズ粉末の製造方法 |
-
2011
- 2011-02-14 CN CN201110037379.XA patent/CN102634816B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5417816A (en) * | 1992-12-09 | 1995-05-23 | Nikko Kyodo, Ltd. | Process for preparation of indium oxide-tin oxide powder |
CN1827266A (zh) * | 2006-04-10 | 2006-09-06 | 李小毛 | 一种纳米镍粉的制备方法 |
CN101746813A (zh) * | 2009-12-17 | 2010-06-23 | 昆明理工大学 | 铟锡氧化物纳米粉体的制备方法 |
Non-Patent Citations (1)
Title |
---|
JP特开平6-199522A 1994.07.19 * |
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Application publication date: 20120815 Assignee: Hefei quantum source nano Polytron Technologies Inc Assignor: Li Xiaomao Contract record no.: 2019340000006 Denomination of invention: Preparation method of nanometer tin indium oxide powder Granted publication date: 20141119 License type: Exclusive License Record date: 20190513 |
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Effective date of registration: 20201014 Address after: 244000 office building, No. 618 Hengsheng Road, suburb of Tongling City, Anhui Province Patentee after: Anhui nalomite New Material Technology Co., Ltd Address before: Jinzhai road in Baohe District of Hefei city in Anhui province 230022 96 Building No. 5 No. 301 Patentee before: Li Xiaomao |