CN102610656A - 耐高压的结型场效应管 - Google Patents
耐高压的结型场效应管 Download PDFInfo
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- CN102610656A CN102610656A CN2011100211920A CN201110021192A CN102610656A CN 102610656 A CN102610656 A CN 102610656A CN 2011100211920 A CN2011100211920 A CN 2011100211920A CN 201110021192 A CN201110021192 A CN 201110021192A CN 102610656 A CN102610656 A CN 102610656A
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CN201110021192.0A CN102610656B (zh) | 2011-01-19 | 2011-01-19 | 耐高压的结型场效应管 |
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CN201110021192.0A CN102610656B (zh) | 2011-01-19 | 2011-01-19 | 耐高压的结型场效应管 |
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CN102610656A true CN102610656A (zh) | 2012-07-25 |
CN102610656B CN102610656B (zh) | 2014-04-16 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106549036A (zh) * | 2016-11-25 | 2017-03-29 | 东莞市联洲知识产权运营管理有限公司 | 一种改进的结型场效应管 |
CN108878513A (zh) * | 2017-05-09 | 2018-11-23 | 世界先进积体电路股份有限公司 | 半导体装置及其制造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080067560A1 (en) * | 2004-04-08 | 2008-03-20 | Martin Knaipp | High Voltage Depletion Layer Field Effect Transistor |
CN201708157U (zh) * | 2010-06-30 | 2011-01-12 | 四川和芯微电子股份有限公司 | 结型场效应晶体管结构 |
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2011
- 2011-01-19 CN CN201110021192.0A patent/CN102610656B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080067560A1 (en) * | 2004-04-08 | 2008-03-20 | Martin Knaipp | High Voltage Depletion Layer Field Effect Transistor |
CN201708157U (zh) * | 2010-06-30 | 2011-01-12 | 四川和芯微电子股份有限公司 | 结型场效应晶体管结构 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106549036A (zh) * | 2016-11-25 | 2017-03-29 | 东莞市联洲知识产权运营管理有限公司 | 一种改进的结型场效应管 |
CN106549036B (zh) * | 2016-11-25 | 2019-11-29 | 温岭腾科电子有限公司 | 一种改进的结型场效应管 |
CN108878513A (zh) * | 2017-05-09 | 2018-11-23 | 世界先进积体电路股份有限公司 | 半导体装置及其制造方法 |
CN108878513B (zh) * | 2017-05-09 | 2021-09-03 | 世界先进积体电路股份有限公司 | 半导体装置及其制造方法 |
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CN102610656B (zh) | 2014-04-16 |
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Legal Events
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TA01 | Transfer of patent application right |
Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant |