CN102608411B - The detection method of radio-frequency power - Google Patents
The detection method of radio-frequency power Download PDFInfo
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- CN102608411B CN102608411B CN201210061074.7A CN201210061074A CN102608411B CN 102608411 B CN102608411 B CN 102608411B CN 201210061074 A CN201210061074 A CN 201210061074A CN 102608411 B CN102608411 B CN 102608411B
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- frequency power
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- thermal oxide
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Abstract
The present invention relates to a kind of detection method of radio-frequency power, comprise the following steps：Build oxygen flow, chamber pressure and radio-frequency power open-interval process menu, under described process menu, measure the data of the corresponding radio-frequency power of some groups of thermal oxide thickness, ask for the relation of thermal oxide thickness and radio-frequency power；Measure first thickness T1 of die surfaces oxide layer；Nude film puts into chamber, is passed through oxygen under described process menu；After nude film thermal oxide, measure second thickness T2 of die surfaces oxide layer；The difference asking for second thickness T2 with first thickness T1 obtains thermal oxide thickness T3；Thermal oxide thickness and the relation of radio-frequency power under described process menu are compareed according to thermal oxide thickness T3, asks for radio-frequency power PRF.The present invention adopts thermal oxide thickness and the relation of radio-frequency power under specific process conditions, derives radio-frequency power, simply it is not necessary to shut down, testing result is more accurate for method after obtaining thermal oxide thickness.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to a kind of detection method of radio-frequency power.
Background technology
Radio-frequency power is an important parameter in high-density plasma deposition process, determines accurately in process operation
Radio-frequency power be necessary, different radio-frequency powers can bring different deposition properties.
The power of radio-frequency signal generator can be detected with power truing tool (RF calibration tool), described work(
Rate truing tool includes probe (sensor head), energy meter (power meter) and dummy load (dummy load).Institute
State probe one end and connect radio-frequency signal generator, the other end connects dummy load, described energy meter connects probe and is used for observing radio frequency work(
Rate, dummy load can go out radio-frequency power by actual response, this method high precision, but in actual production process, dummy load
Detection environment act on the environment of chamber different from radio-frequency signal generator, the influence factor of chamber a lot, is a complicated ring
Border, so detect that with power truing tool the radio-frequency power drawing during dummy load can not represent the power of chamber completely.
Content of the invention
It is an object of the invention to provide a kind of detection method of radio-frequency power, with accurate detection radio-frequency power and method is direct
Simply.
The technical solution of the present invention is a kind of detection method of radio-frequency power, comprises the following steps：
Build oxygen flow, chamber pressure and radio-frequency power open-interval process menu, under described process menu, measure
Some groups of thermal oxide thickness correspond to the data of radio-frequency power, ask for the pass of thermal oxide thickness and radio-frequency power under described process menu
System；
Measure first thickness T1 of die surfaces oxide layer；
Nude film puts into chamber, is passed through oxygen under described process menu；
After nude film thermal oxide, measure second thickness T2 of die surfaces oxide layer；
The difference asking for second thickness T2 with first thickness T1 obtains thermal oxide thickness T3；
The thickness of thermal oxide and the relation of radio-frequency power under described process menu are compareed according to thermal oxide thickness T3, asks for penetrating
Frequency power PRF.
As preferred：Each technological parameter of described process menu is as follows：
Described oxygen flow is 10-100sccm；
Described chamber pressure is 1-10mtorr；
The described radio-frequency power opening time is 30-60s.
As preferred：Under described technological parameter, thermal oxide thickness T3 and radio-frequency power PRFRelational expression be T3=20.05
+0.0041*PRF.
As preferred：First thickness T1 of described die surfaces oxide layer is 5-7 angstrom.
Compared with prior art, the present invention adopts the pass of the thermal oxide thickness of nude film and radio-frequency power under specific process conditions
System, derives radio-frequency power after obtaining thermal oxide thickness, and method is simple, and it is not necessary to shut down, result is direct, by changing work
Skill parameter, can simulate process statuss, and testing result is more accurate, can be used for the reference of calibration of power instrument.
Brief description
Fig. 1 is the flow chart of the detection method of radio-frequency power of the present invention.
Specific embodiment
The present invention is further detailed in conjunction with the accompanying drawings below：
Elaborate a lot of details in order to fully understand the present invention in the following description.But the present invention can be with
Much it is different from alternate manner described here to implement, those skilled in the art can be in the situation without prejudice to intension of the present invention
Under do similar popularization, therefore the present invention is not embodied as being limited by following public.
Secondly, the present invention is described in detail using schematic diagram, when describing the embodiment of the present invention in detail, for purposes of illustration only, table
Show that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, its here should not
Limit the scope of protection of the invention.Additionally, the three-dimensional space of length, width and depth should be comprised in actual fabrication.
The flow chart that Fig. 1 shows the detection method of radio-frequency power of the present invention.
Refer to shown in Fig. 1, in the present embodiment,
A kind of detection method of radio-frequency power, comprises the following steps：
In a step 101, oxygen flow, chamber pressure and radio-frequency power open-interval process menu are built, in described work
Under skill menu, measure the data of the corresponding radio-frequency power of some groups of thermal oxide thickness, ask for thermal oxide thickness under described process menu
With the relation of radio-frequency power, in the present embodiment, each technological parameter of described process menu is as follows：
Described oxygen flow is 10-100sccm；
Described chamber pressure is 1-10mtorr；
The described radio-frequency power opening time is 30-60S；
In a step 102, measure first thickness T1 of die surfaces oxide layer, the first of described die surfaces oxide layer is thick
Degree T1 is 5-7 angstrom；
In step 103, nude film puts into chamber, is passed through oxygen under described process menu, opens radio-frequency power, nude film
Temperature comes from the dissociation to gas for the radio frequency, and the ionic bombardment silicon chip of dissociation produces temperature, and described temperature is 370～450 degree；
At step 104, after nude film thermal oxide, measure second thickness T2 of die surfaces oxide layer；
In step 105, the difference asking for second thickness and first thickness obtains the thickness T3 of thermal oxide, described thermal oxide
Thickness T3=T2-T1；
In step 106, thermal oxide thickness and radio-frequency power under described process menu are compareed according to thermal oxide thickness T3
Relation, asks for radio-frequency power PRF, under described technological parameter, thermal oxide thickness T3 and radio-frequency power PRFRelational expression be T3=
20.05+0.0041*PRF, the unit of described thermal oxide thickness is angstrom, and the unit of described radio-frequency power is watt.
The present invention adopts the relation of the thermal oxide thickness of nude film and radio-frequency power under specific process conditions, by obtaining hot oxygen
Radio-frequency power is derived, method is simple, and result is direct it is not necessary to shut down, and by changing technological parameter, can simulate after changing thickness
Process statuss, testing result is more accurate, can be used for calibration of power tool references.
The foregoing is only presently preferred embodiments of the present invention, all impartial changes done according to scope of the invention as claimed with
Modify, all should belong to the covering scope of the claims in the present invention.
Claims (3)
1. a kind of detection method of radio-frequency power is it is characterised in that comprise the following steps：
Build oxygen flow, chamber pressure and radio-frequency power open-interval process menu, described oxygen flow is 10-100sccm,
Chamber pressure is 1-10mtorr；The radio-frequency power opening time is 30-60s；Under described process menu, measure some groups of hot oxygen
Change the data of the corresponding radio-frequency power of thickness, ask for the relation of thermal oxide thickness and radio-frequency power under described process menu；
Measure first thickness T1 of die surfaces oxide layer；
Nude film puts into chamber, is passed through oxygen under described process menu；
After nude film thermal oxide, measure second thickness T2 of die surfaces oxide layer；
The difference asking for second thickness T2 with first thickness T1 obtains thermal oxide thickness T3；
Thermal oxide thickness and the relation of radio-frequency power under described process menu are compareed according to thermal oxide thickness T3, asks for radio-frequency power
PRF.
2. radio-frequency power according to claim 1 detection method it is characterised in that：Described thermal oxide thickness T3 and radio frequency
Power PRFRelational expression be T3=20.05+0.0041*PRF.
3. radio-frequency power according to claim 1 detection method it is characterised in that：The of described die surfaces oxide layer
One thickness T1 is 5-7 angstrom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210061074.7A CN102608411B (en) | 2012-03-09 | 2012-03-09 | The detection method of radio-frequency power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210061074.7A CN102608411B (en) | 2012-03-09 | 2012-03-09 | The detection method of radio-frequency power |
Publications (2)
| Publication Number | Publication Date |
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| CN102608411A CN102608411A (en) | 2012-07-25 |
| CN102608411B true CN102608411B (en) | 2017-03-08 |
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| CN201210061074.7A Active CN102608411B (en) | 2012-03-09 | 2012-03-09 | The detection method of radio-frequency power |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101598750A (en) * | 2008-06-03 | 2009-12-09 | 优仪半导体设备(深圳)有限公司 | A kind of measuring method of chip power-consumption |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080234953A1 (en) * | 2007-03-22 | 2008-09-25 | Ignowski James S | Power estimation for a semiconductor device |
| US8744783B2 (en) * | 2009-08-27 | 2014-06-03 | The United States Of America As Represented By The Secretary Of The Navy | System and method for measuring power generated during legged locomotion |
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2012
- 2012-03-09 CN CN201210061074.7A patent/CN102608411B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101598750A (en) * | 2008-06-03 | 2009-12-09 | 优仪半导体设备(深圳)有限公司 | A kind of measuring method of chip power-consumption |
Non-Patent Citations (1)
| Title |
|---|
| 射频功率测量的基础知识;姜守达等;《国外电子测量技术》;19981231(第2期);第36-37、48页 * |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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