CN102608411A - Radiofrequency power detection method - Google Patents
Radiofrequency power detection method Download PDFInfo
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- CN102608411A CN102608411A CN2012100610747A CN201210061074A CN102608411A CN 102608411 A CN102608411 A CN 102608411A CN 2012100610747 A CN2012100610747 A CN 2012100610747A CN 201210061074 A CN201210061074 A CN 201210061074A CN 102608411 A CN102608411 A CN 102608411A
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- frequency power
- thermal oxide
- radiofrequency power
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Abstract
The invention relates to a radiofrequency power detection method, which includes the steps: building a process menu for oxygen flow, chamber gas pressure and radiofrequency power on time, acquiring data of a plurality of groups of thermal oxidation thicknesses corresponding to radiofrequency power under the process menu, and obtaining the relation of the thermal oxidation thicknesses to the radiofrequency power; acquiring first thickness T1 of an oxide layer on the surface of a bare chip; placing the bare chip in a chamber, and introducing in oxygen under the process menu; acquiring second thickness T2 of the oxide layer on the surface of the bare chip after thermal oxidation; obtaining a difference between the second thickness T2 and the first thickness T1 to obtain thermal oxidation thickness T3; and obtaining the radiofrequency power PRF according to the thermal oxidation thickness T3 and the relation of the thermal oxidation thickness to the radiofrequency power under the specific process menu. According to the relation of the thermal oxidation thickness to the radiofrequency power under the specific process conditions, the radiofrequency power is deduced by obtaining the thermal oxidation thickness, and the radiofrequency power detection method is simple, requires no stoppage and is accurate in detection results.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of detection method of radio-frequency power.
Background technology
Radio-frequency power is important parameters in the high-density plasma deposition process, is necessary at technology definite radio-frequency power accurately in service, and different radio-frequency powers can bring different deposition properties.
The power of radio-frequency signal generator can use power truing tool (RF calibration tool) to detect, and said calibration of power instrument comprises probe (sensor head), power meter (power meter) and dummy load (dummy load).Said probe one end connects radio-frequency signal generator; The other end connects dummy load, and said power meter connects probe and is used to observe radio-frequency power, and dummy load can go out radio-frequency power by actual response; This method precision is high; But in the actual production process, the testing environment of dummy load is different from the environment that radio-frequency signal generator acts on chamber, and the influence factor of chamber is a lot; Be a complex environment, so the radio-frequency power that draws when detecting dummy load with the power truing tool can not be represented the power of chamber fully.
Summary of the invention
The detection method that the purpose of this invention is to provide a kind of radio-frequency power is directly simple with accurate detection radio-frequency power and method.
Technical solution of the present invention is a kind of detection method of radio-frequency power, may further comprise the steps:
Build oxygen flow, chamber pressure and radio-frequency power open-interval process menu, under said process menu, measure the data of the corresponding radio-frequency powers of some groups of thermal oxide thickness, ask for the relation of thermal oxide thickness and radio-frequency power under the said process menu;
Measure first thickness T 1 of die surfaces oxide layer;
Nude film is put into chamber, aerating oxygen under said process menu;
After the nude film thermal oxide, measure second thickness T 2 of die surfaces oxide layer;
The difference of asking for second thickness T 2 and first thickness T 1 obtains thermal oxide thickness T 3;
According to the thickness of thermal oxide under the said process menu of thermal oxide thickness T 3 contrasts and the relation of radio-frequency power, ask for radio-frequency power P
RF
As preferably: each technological parameter of said process menu is following:
Said oxygen flow is 10-100sccm;
Said chamber pressure is 1-10mtorr;
The said radio-frequency power opening time is 30-60s.
As preferably: under said technological parameter, thermal oxide thickness T 3 and radio-frequency power P
RFRelational expression be T3=20.05+0.0041*P
RF
As preferably: first thickness T 1 of said die surfaces oxide layer is the 5-7 dust.
Compared with prior art, the present invention adopts the thermal oxide thickness of nude film under the specific process conditions and the relation of radio-frequency power, after obtaining thermal oxide thickness, derives radio-frequency power; Method is simple, does not need to shut down, and the result is direct; Through changing technological parameter; Can simulate process status, testing result is more accurate, can be used for the reference of calibration of power instrument.
Description of drawings
Fig. 1 is the process flow diagram of the detection method of radio-frequency power of the present invention.
Embodiment
The present invention below will combine accompanying drawing to do further to detail:
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes synoptic diagram to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is instance, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 1 shows the process flow diagram of the detection method of radio-frequency power of the present invention.
See also shown in Figure 1, in the present embodiment,
A kind of detection method of radio-frequency power may further comprise the steps:
In step 101; Build oxygen flow, chamber pressure and radio-frequency power open-interval process menu; Under said process menu, measure the data of the corresponding radio-frequency powers of some groups of thermal oxide thickness, ask for the relation of thermal oxide thickness and radio-frequency power under the said process menu; In the present embodiment, each technological parameter of said process menu is following:
Said oxygen flow is 10-100sccm;
Said chamber pressure is 1-10mtorr;
The said radio-frequency power opening time is 30-60S;
In step 102, measure first thickness T 1 of die surfaces oxide layer, first thickness T 1 of said die surfaces oxide layer is the 5-7 dust;
In step 103, nude film is put into chamber, and aerating oxygen under said process menu is opened radio-frequency power, and the temperature of nude film comes from radio frequency to the dissociating of gas, and the ionic bombardment silicon chip that dissociates produces temperature, and said temperature is 370～450 degree;
In step 104, after the nude film thermal oxide, measure second thickness T 2 of die surfaces oxide layer;
In step 105, the difference of asking for second thickness and first thickness obtains the thickness T 3 of thermal oxide, said thermal oxide thickness T 3=T2-T1;
In step 106,, ask for radio-frequency power P according to the relation of thermal oxide thickness and radio-frequency power under the said process menu of thermal oxide thickness T 3 contrasts
RF, under said technological parameter, thermal oxide thickness T 3 and radio-frequency power P
RFRelational expression be T3=20.05+0.0041*P
RF, the unit of said thermal oxide thickness is a dust, the unit of said radio-frequency power is watt.
The present invention adopts the thermal oxide thickness of nude film under the specific process conditions and the relation of radio-frequency power, after obtaining thermal oxide thickness, derives radio-frequency power, and method is simple; Do not need to shut down; The result is direct, through changing technological parameter, can simulate process status; Testing result is more accurate, can be used for the reference of calibration of power instrument.
The above is merely preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to the covering scope of claim of the present invention.
Claims (4)
1. the detection method of a radio-frequency power is characterized in that, may further comprise the steps:
Build oxygen flow, chamber pressure and radio-frequency power open-interval process menu, under said process menu, measure the data of the corresponding radio-frequency powers of some groups of thermal oxide thickness, ask for the relation of thermal oxide thickness and radio-frequency power under the said process menu;
Measure first thickness T 1 of die surfaces oxide layer;
Nude film is put into chamber, aerating oxygen under said process menu;
After the nude film thermal oxide, measure second thickness T 2 of die surfaces oxide layer;
The difference of asking for second thickness T 2 and first thickness T 1 obtains thermal oxide thickness T 3;
According to the relation of thermal oxide thickness and radio-frequency power under the said process menu of thermal oxide thickness T 3 contrasts, ask for radio-frequency power P
RF
2. the detection method of radio-frequency power according to claim 1 is characterized in that, each technological parameter of said process menu is following:
Said oxygen flow is 10-100sccm;
Said chamber pressure is 1-10mtorr;
The said radio-frequency power opening time is 30-60s.
3. the detection method of radio-frequency power according to claim 2 is characterized in that: under said each technological parameter, and thermal oxide thickness T 3 and radio-frequency power P
RFRelational expression be T3=20.05+0.0041*P
RF
4. the detection method of radio-frequency power according to claim 1 is characterized in that: first thickness T 1 of said die surfaces oxide layer is the 5-7 dust.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210061074.7A CN102608411B (en) | 2012-03-09 | 2012-03-09 | The detection method of radio-frequency power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210061074.7A CN102608411B (en) | 2012-03-09 | 2012-03-09 | The detection method of radio-frequency power |
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| CN102608411A true CN102608411A (en) | 2012-07-25 |
| CN102608411B CN102608411B (en) | 2017-03-08 |
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| CN201210061074.7A Active CN102608411B (en) | 2012-03-09 | 2012-03-09 | The detection method of radio-frequency power |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080234953A1 (en) * | 2007-03-22 | 2008-09-25 | Ignowski James S | Power estimation for a semiconductor device |
| CN101598750A (en) * | 2008-06-03 | 2009-12-09 | 优仪半导体设备(深圳)有限公司 | A kind of measuring method of chip power-consumption |
| US20110054809A1 (en) * | 2009-08-27 | 2011-03-03 | Templeman Robert E | System and method for measuring power generated during legged locomotion |
-
2012
- 2012-03-09 CN CN201210061074.7A patent/CN102608411B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080234953A1 (en) * | 2007-03-22 | 2008-09-25 | Ignowski James S | Power estimation for a semiconductor device |
| CN101598750A (en) * | 2008-06-03 | 2009-12-09 | 优仪半导体设备(深圳)有限公司 | A kind of measuring method of chip power-consumption |
| US20110054809A1 (en) * | 2009-08-27 | 2011-03-03 | Templeman Robert E | System and method for measuring power generated during legged locomotion |
Non-Patent Citations (1)
| Title |
|---|
| 姜守达等: "射频功率测量的基础知识", 《国外电子测量技术》, no. 2, 31 December 1998 (1998-12-31) * |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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