CN102608265A - 释放舱与被测试物接触的表面的处理方法 - Google Patents

释放舱与被测试物接触的表面的处理方法 Download PDF

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CN102608265A
CN102608265A CN2012100493936A CN201210049393A CN102608265A CN 102608265 A CN102608265 A CN 102608265A CN 2012100493936 A CN2012100493936 A CN 2012100493936A CN 201210049393 A CN201210049393 A CN 201210049393A CN 102608265 A CN102608265 A CN 102608265A
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CN102608265B (zh
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夏可瑜
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DONGGUAN SIMPLEWELL TECHNOLOGY Co Ltd
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Abstract

本发明公开了一种释放舱与被测试物接触的表面的处理方法，该方法包括以下步骤：(一)所述各部件由不锈钢或玻璃加工而成，部件为不锈钢构件时，先用酸氧化，再用有机溶剂及水清洗，或者氧化后进行电解，再用有机溶剂及水清洗；部件为玻璃构件时，采用HCL或HF腐蚀，或采用物理方法使部件表面粗糙化；(二)在经过步骤(一)清洗后的部件的表面加工去活层，或者先在经过步骤(一)清洗后的部件的表面加工中间层，然后在中间层的表面加工去活层。降低了表面吸附力，能大大减少被测试物吸附在舱体内壁及各部件与被测试物接触的表面上，使得从采样管的所取得的样品中得到的检测值更接近于舱体内被测试物的实际值，能有效提高释放舱的检测精度。

Description

释放舱与被测试物接触的表面的处理方法
技术领域
本发明涉及一种气体挥发性有机物(VOC)、半挥发性有机物(SVOC)及高沸点有机物检测用测试装置内部与被测试物接触的表面的处理方法。
技术背景
传统气体挥发性有机物(VOC)、半挥发性有机物(SVOC)及高沸点有机物检测用测试装置，其舱体内壁及各部件与被测试物接触的表面，由于存在一些吸附被测试物的化学键或者较强的表面张力，使得被测试物吸附在舱体内壁及各部件与被测试物接触的表面上，很难吹扫下来。对于极性化合物，由于舱体内壁及各部件与被测试物接触的表面某些化学键的影响，吸附力更强。因此舱体内壁及各部件与被测试物接触的表面必须进行处理，使得测试装置内表面化学键，如氢键、硅醇基、路易氏酸活化点点被覆盖，被测试物容易吸附在舱体内壁及各部件与被测试物接触的表面上，而取样分析被测试物的含量时，是用从测试装置的采样管的所取得的样品进行检测，由于舱体内壁及各部件与被测试物接触的表面吸附了大量的被测试物，导致从样品中得到的检测值低于舱体内被测试物的实际值，检测误差大，不能有效满足高精度的检测需要。
发明内容
本发明的目的在于克服现有技术中上述缺陷：提供一种释放舱与被测试物接触的表面的处理方法，能大大减少被测试物吸附在舱体内壁及各部件与被测试物接触的表面上，有效提高释放舱的检测精度。
为实现上述目的，本发明提供的技术方案如下：构造一种释放舱与被测试物接触的表面的处理方法，该释放舱包括以下部件：舱体，与舱体连接的舱门、进气管、排气管、采样管，装设在舱体内的搅拌风机，风道板，该方法用于对所述舱体、舱门、进气管、排气管、采样管、搅拌风机及风道板中至少一部件与被测试物接触的表面的进行处理，包括以下步骤：
(一)、所述各部件由不锈钢或玻璃加工而成，部件为不锈钢构件时，先用酸氧化，再用有机溶剂及水清洗，或者氧化后进行电解，再用有机溶剂及水清洗；部件为玻璃构件时，采用HCL或HF腐蚀，或采用物理方法使部件表面粗糙化；
(二)、在经过步骤(一)清洗后的部件的表面加工去活层，或者先在经过步骤(一)清洗后的部件的表面加工中间层，然后在中间层的表面加工去活层。
部件为不锈钢构件时，所述中间层的加工是将经过步骤(一)清洗后的部件采用通入单硅烷在500℃以上的高温条件下煅烧而成SiO2层；或者是在经过步骤(一)清洗后的部件的表面涂有机硅胶后在500℃以上的高温条件下煅烧而成SiO2层；或者涂聚硅氧烷类、环糊精衍生物，高温500度以上煅烧而成SiO2层.所述聚硅氧烷类是聚二甲基硅氧烷、含苯基聚硅氧烷、含氰基聚硅氧烷、含氟聚硅氧烷、加入乙烯基的聚硅氧烷、端烃基聚硅氧烷或者在分子链与官能团间引入间隔基的聚硅氧烷，环糊精衍生物；所述中间层或者是采用在制孔剂中加入不含来源于芳香族的碳原子及杂环的环氧化合物和胺化合物在60-200℃下发生聚合反应，形成凝胶物，然后涂在经过步骤(一)清洗后的部件表面，用溶剂清洗制孔剂，留下骨架相后干燥处理而成三维网状或孔状骨架相，所述制孔剂为甲基溶纤剂、乙基溶纤剂，乙二醇-甲醚乙酸酯、丙二醇-甲醚乙酸酯等酯类，聚乙二醇或者聚丙二醇，所述环氧化合物为2，2，2-三-(2，3-环氧丙基)-异氰尿酸酯，所述胺化合物为乙二胺、二亚乙基三胺、三亚乙基四胺、三缩四乙二胺、亚氨基双丙胺/双(六亚甲基)三胺、1，3，6-三氨基甲基己烷、聚亚甲基二胺、三甲基六亚甲基二胺、聚醚二胺、异佛尔酮二胺、薄荷烷二胺、N-氨基乙基哌嗪、3，9-双(3-氨丙基)2，4，8，10-四氧螺环、双(4-氨基环己基)甲烷或者由聚胺类与二聚酸构成的脂肪族聚酰胺类；部件为玻璃构件时，采用在部件表面沉积二氧化硅、氯化钠或者石墨碳黑来生成中间层。
所述去活层的加工是采用低表面张力的有机化合物涂或浸在中间层或者部件表面上并在300℃以上的高温条件下烘烤而成；所述去活层的加工或者是将经过步骤(一)清洗后的部件表面或者中间层表面涂或者浸SiO2溶胶后在300℃以上的高温条件下烘烤，用溶剂去除多余物质而成；所述去活层的加工或者是将经过步骤(一)清洗后的部件表面或者中间层表面涂或者浸聚苯并咪唑吡咯酮(PY)、聚四氟乙烯、聚氟烷类、正硅酸脂或者正硅酸乙脂类后300℃以上的高温条件下烘烤而成。
本发明所述释放舱与被测试物接触的表面的处理方法的有益效果是：通过采用该方法在经过步骤(一)清洗后的部件的表面加工去活层，或者先在经过步骤(一)清洗后的部件的表面加工中间层，然后在中间层的表面加工去活层。降低了舱体内壁及各部件与被测试物接触的表面的表面张力，能大大减少被测试物吸附在舱体内壁及各部件与被测试物接触的表面上，使得从采样管的所取得的样品中得到的检测值更接近于舱体内被测试物的实际值，从而有效提高释放舱的检测精度。
下面结合附图和实施例对本发明所述的释放舱与被测试物接触的表面的处理方法作进一步说明：
附图说明
图1是本发明释放舱与被测试物接触的表面的处理方法所述的释放舱涂有中间层及去活层的结构示意图；
图2是图1的A-A剖视放大图；
图3是图1的B-B剖视放大图；
图4是本发明释放舱与被测试物接触的表面的处理方法所述的释放舱涂有覆盖层的结构示意图；
图5是图4的C-C剖视放大图；
图6是图4的D-D剖视放大图。
具体实施方式
以下本发明所述释放舱与被测试物接触的表面的处理方法的最佳实施例，并不因此限定本发明的保护范围。
实施例一，参照图1、图2、图3，提供一种释放舱与被测试物接触的表面的处理方法，该释放舱包括以下部件：舱体1，与舱体1连接的舱门2、进气管4、排气管5、采样管6，装设在舱体1内的搅拌风机7，风道板8，该方法用于对所述舱体1、舱门2、进气管4、排气管5、采样管6、搅拌风机7及风道板8中至少一部件与被测试物接触的表面的进行处理，包括以下步骤：
(一)、所述各部件由不锈钢或玻璃加工而成，部件为不锈钢构件时，先用酸氧化，再用有机溶剂及水清洗，或者氧化后进行电解，再用有机溶剂及水清洗；部件为玻璃构件时，采用HCL或HF腐蚀，或采用物理方法使部件表面粗糙化；
(二)、先在经过步骤(一)清洗后的部件的表面加工中间层9，然后在中间层9的表面加工去活层10。
所述中间层9为SiO2层，或者为三维网状或孔状骨架相，厚度为亚微米到微米厚度。
所述去活层10的厚度为亚微米到微米厚度，为液晶膜结构。
部件为不锈钢构件时，所述中间层9的加工是将经过步骤(一)清洗后的部件采用通入单硅烷在500℃以上的高温条件下煅烧而成SiO2层；或者是在经过步骤(一)清洗后的部件的表面涂或浸有机硅胶后在500℃以上的高温条件下煅烧而成SiO2层；或者涂或浸聚硅氧烷类、环糊精衍生物，高温500度以上煅烧而成SiO2层.所述聚硅氧烷类是聚二甲基硅氧烷、含苯基聚硅氧烷、含氰基聚硅氧烷、含氟聚硅氧烷、加入乙烯基的聚硅氧烷、端烃基聚硅氧烷或者在分子链与官能团间引入间隔基的聚硅氧烷；所述中间层9或者是采用在制孔剂中加入不含来源于芳香族的碳原子及杂环的环氧化合物和胺化合物在60-200℃下发生聚合反应，形成凝胶物，然后涂浸在经过步骤(一)清洗后的部件表面，用溶剂清洗制孔剂，留下骨架相后干燥处理而成三维网状或孔状骨架相，所述制孔剂为甲基溶纤剂、乙基溶纤剂，乙二醇-甲醚乙酸酯、丙二醇-甲醚乙酸酯等酯类，聚乙二醇或者聚丙二醇，所述环氧化合物为2，2，2-三-(2，3-环氧丙基)-异氰尿酸酯，所述胺化合物为乙二胺、二亚乙基三胺、三亚乙基四胺、三缩四乙二胺、亚氨基双丙胺/双(六亚甲基)三胺、1，3，6-三氨基甲基己烷、聚亚甲基二胺、三甲基六亚甲基二胺、聚醚二胺、异佛尔酮二胺、薄荷烷二胺、N-氨基乙基哌嗪、3，9-双(3-氨丙基)2，4，8，10-四氧螺环、双(4-氨基环己基)甲烷或者由聚胺类与二聚酸构成的脂肪族聚酰胺类；部件为玻璃构件时，采用在部件表面沉积二氧化硅、氯化钠或者石墨碳黑来生成中间层9。
所述去活层10的加工是采用低表面张力的有机化合物涂或浸在中间层9或者部件表面上并在300℃以上的高温条件下烘烤而成；所述去活层10的加工或者是将经过步骤(一)清洗后的部件表面或者中间层9表面涂或者浸SiO2溶胶后在300℃以上的高温条件下烘烤，用溶剂去除多余物质而成，所述SiO2溶胶成分为甲基三氧基硅烷和四乙氧基硅烷水解物；所述去活层10的加工或者是将经过步骤(一)清洗后的部件表面或者中间层9表面涂或者浸聚苯并咪唑吡咯酮(PY)、聚四氟乙烯、聚氟烷类、正硅酸脂或者正硅酸乙脂类后300℃以上的高温条件下烘烤而成。
所述低表面张力的有机化合物为硅烷类化合物、含氢硅油或者聚乙二醇。所述硅烷类化合物为三甲基氯硅烷、六甲基二硅氨烷、端烃基聚甲基硅氧烷、苯基-二甲基聚硅烷、甲基三氧基硅烷、二甲基聚硅氧烷、二苯基四甲基硅胺烷、聚硅氧烷或含氟聚硅氧烷。
实施例二，参照图4、图5、图6，提供一种释放舱与被测试物接触的表面的处理方法，该释放舱包括以下部件：舱体1，与舱体1连接的舱门2、进气管4、排气管5、采样管6，装设在舱体1内的搅拌风机7，风道板8，该方法用于对所述舱体1、舱门2、进气管4、排气管5、采样管6、搅拌风机7及风道板8中至少一部件与被测试物接触的表面的进行处理，包括以下步骤：
(一)、所述各部件由不锈钢或玻璃加工而成，部件为不锈钢构件时，先用酸氧化，再用有机溶剂及水清洗，或者氧化后进行电解，再用有机溶剂及水清洗；部件为玻璃构件时，用有机溶剂及水清洗；
(二)直接在经过步骤(一)清洗后的部件的表面加工去活层10。
所述去活层10的厚度为亚微米到微米厚度，为液晶膜结构。
所述去活层10的加工是采用低表面张力的有机化合物涂或浸在中间层9或者部件表面上并在300℃以上的高温条件下烘烤而成；所述去活层10的加工或者是将经过步骤(一)清洗后的部件表面或者中间层9表面涂或者浸SiO2溶胶后在300℃以上的高温条件下烘烤，用溶剂去除多余物质而成，所述SiO2溶胶成分为甲基三氧基硅烷和四乙氧基硅烷水解物；所述去活层10的加工或者是将经过步骤(一)清洗后的部件表面或者中间层9表面涂或者浸聚苯并咪唑吡咯酮(PY、聚四氟乙烯、聚氟烷类、正硅酸脂或者正硅酸乙脂类后300℃以上的高温条件下烘烤而成。
所述低表面张力的有机化合物为硅烷类化合物、含氢硅油或者聚乙二醇。所述硅烷类化合物为三甲基氯硅烷、六甲基二硅氨烷、端烃基聚甲基硅氧烷、苯基-二甲基聚硅烷、甲基三氧基硅烷、二甲基聚硅氧烷、二苯基四甲基硅胺烷、聚硅氧烷或含氟聚硅氧烷。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (8)

1.一种释放舱与被测试物接触的表面的处理方法，该释放舱包括以下部件：舱体(1)，与舱体(1)连接的舱门(2)、进气管(4)、排气管(5)、采样管(6)，装设在舱体(1)内的搅拌风机(7)，风道板(8)，该方法用于对所述舱体(1)、舱门(2)、进气管(4)、排气管(5)、采样管(6)、搅拌风机(7)及风道板(8)中至少一部件与被测试物接触的表面的进行处理，其特征在于，包括以下步骤：
(一)、所述各部件由不锈钢或玻璃加工而成，部件为不锈钢构件时，先用酸氧化，再用有机溶剂及水清洗，或者氧化后进行电解，再用有机溶剂及水清洗；部件为玻璃构件时，采用HCL或HF腐蚀，或采用物理方法使部件表面粗糙化；
(二)、在经过步骤(一)清洗后的部件的表面加工去活层(10)，或者先在经过步骤(一)清洗后的部件的表面加工中间层(9)，然后在中间层(9)的表面加工去活层(10)。
2.根据权利要求1所述的释放舱与被测试物接触的表面的处理方法，其特征在于，所述中间层(9)为SiO2层，或者为三维网状或孔状骨架相，厚度为亚微米到微米厚度。
3.根据权利要求1所述的释放舱与被测试物接触的表面的处理方法，其特征在于，所述去活层(10)的厚度为亚微米到微米厚度，为液晶膜结构。
4.根据权利要求2所述的释放舱与被测试物接触的表面的处理方法，其特征在于，部件为不锈钢构件时，所述中间层(9)的加工是将经过步骤(一)清洗后的部件采用通入单硅烷在500℃以上的高温条件下煅烧而成SiO2层；或者是在经过步骤(一)清洗后的部件的表面涂或浸有机硅胶后在500℃以上的高温条件下煅烧而成SiO2层；或者涂或浸聚硅氧烷类、环糊精衍生物，高温500度以上煅烧而成SiO2层.所述聚硅氧烷类是聚二甲基硅氧烷、含苯基聚硅氧烷、含氰基聚硅氧烷、含氟聚硅氧烷、加入乙烯基的聚硅氧烷、端烃基聚硅氧烷或者在分子链与官能团间引入间隔基的聚硅氧烷；所述中间层(9)或者是采用在制孔剂中加入不含来源于芳香族的碳原子及杂环的环氧化合物和胺化合物在60-200℃下发生聚合反应，形成凝胶物，然后涂浸在经过步骤(一)清洗后的部件表面，用溶剂清洗制孔剂，留下骨架相后干燥处理而成三维网状或孔状骨架相，所述制孔剂为甲基溶纤剂、乙基溶纤剂，乙二醇-甲醚乙酸酯、丙二醇-甲醚乙酸酯等酯类，聚乙二醇或者聚丙二醇，所述环氧化合物为2，2，2-三-(2，3-环氧丙基)-异氰尿酸酯，所述胺化合物为乙二胺、二亚乙基三胺、三亚乙基四胺、三缩四乙二胺、亚氨基双丙胺/双(六亚甲基)三胺、1，3，6-三氨基甲基己烷、聚亚甲基二胺、三甲基六亚甲基二胺、聚醚二胺、异佛尔酮二胺、薄荷烷二胺、N-氨基乙基哌嗪、3，9-双(3-氨丙基)2，4，8，10-四氧螺环、双(4-氨基环己基)甲烷或者由聚胺类与二聚酸构成的脂肪族聚酰胺类；部件为玻璃构件时，采用在部件表面沉积二氧化硅、氯化钠或者石墨碳黑来生成中间层(9)。
5.根据权利要求1所述的释放舱与被测试物接触的表面的处理方法，其特征在于，所述去活层(10)的加工是采用低表面张力的有机化合物涂或浸在中间层(9)或者部件表面上并在300℃以上的高温条件下烘烤而成；所述去活层(10)的加工或者是将经过步骤(一)清洗后的部件表面或者中间层(9)表面涂或者浸SiO2溶胶后在300℃以上的高温条件下烘烤，用溶剂去除多余物质而成；所述去活层(10)的加工或者是将经过步骤(一)清洗后的部件表面或者中间层(9)表面涂或者浸聚苯并咪唑吡咯酮(PY)、聚四氟乙烯、聚氟烷类、正硅酸脂或者正硅酸乙脂类后300℃以上的高温条件下烘烤而成。
6.根据权利要求5所述的释放舱与被测试物接触的表面的处理方法，其特征在于，所述低表面张力的有机化合物为硅烷类化合物、含氢硅油或者聚乙二醇。
7.根据权利要求6所述的释放舱与被测试物接触的表面的处理方法，其特征在于，所述硅烷类化合物为三甲基氯硅烷、六甲基二硅氨烷、端烃基聚甲基硅氧烷、苯基-二甲基聚硅烷、甲基三氧基硅烷、二甲基聚硅氧烷、二苯基四甲基硅胺烷、聚硅氧烷或含氟聚硅氧烷。
8.根据权利要求5所述的释放舱与被测试物接触的表面的处理方法，其特征在于，所述SiO2溶胶成分为甲基三氧基硅烷和四乙氧基硅烷水解物。
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