CN102582220B - Method for manufacturing anode screen plate for improving solar cell silicon sheet conversion rate - Google Patents

Method for manufacturing anode screen plate for improving solar cell silicon sheet conversion rate Download PDF

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Publication number
CN102582220B
CN102582220B CN 201210047834 CN201210047834A CN102582220B CN 102582220 B CN102582220 B CN 102582220B CN 201210047834 CN201210047834 CN 201210047834 CN 201210047834 A CN201210047834 A CN 201210047834A CN 102582220 B CN102582220 B CN 102582220B
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Prior art keywords
screen plate
positive electrode
silk screen
silicon cell
solar silicon
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CN 201210047834
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CN102582220A (en
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王金伟
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SUZHOU OUFANG ELECTRONICS TECHNOLOGY Co Ltd
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SUZHOU OUFANG ELECTRONICS TECHNOLOGY Co Ltd
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Abstract

The invention provides a method for manufacturing an anode screen plate for improving the solar cell silicon sheet conversion rate. The method comprises the following steps: 1, superposing and contrasting an anode printing figure and a screen plate figure by computer software; 2, adjusting the spacing between adjacent longitude wires on the fine grid wire part of the anode printing figure of a corresponding solar cell silicon sheet; 3, increasing the wire diameters of the longitude wires and latitude wires of the anode screen plate outside of the anode printing figure of the solar cell silicon sheet; and 4, completing the manufacturing of the screen plate through in an electroforming or micro-cutting manner according to the figure. The method solves a problem that the conversion rate of the solar cell silicon sheet cannot breakthrough because the printing of screen plates in the prior art is discontinuous and nonuniform, and the spacing between the adjacent longitude wires of the screen plate is adjusted to make the fine grid wire of the anode printing figure have no network nod blocks. The screen plate manufactured through adopting the method has the advantages of no discontinuity after the silver slurry printing, uniform printing, fine grid wire width, and improvement of the cell sheet conversion rate.

Description

The positive electrode silk screen plate manufacture method that a kind of solar silicon cell conversion ratio is high
Technical field
The present invention relates to the high positive electrode silk screen plate manufacture method of a kind of solar silicon cell conversion ratio, belonged to printing technology.
Background technology
Along with science and technology development, this environmental protection energy of solar energy is used in every field such as production, lives in a large number.The enlarged diagram of traditional solar energy positive electrode silk screen plate as shown in Figure 1, thin grid line 21 for fear of the positive electrode image overlaps fully with the warp 11 of silk screen plate 1, usually make silk screen plate 1 have the angle of inclination of 22.5 degree or 30 degree, but because there are anastomose in the warp 11 of silk screen plate 1 and the intersection point place of parallel 12, make the thin grid line live width of the existing solar energy limit about 50 μ m, otherwise cause printing broken string or inhomogeneous easily, make the conversion efficiency of solar silicon cell can't obtain breaking through.
Summary of the invention
Technical problem to be solved by this invention provides the high positive electrode silk screen plate manufacture method of a kind of solar silicon cell conversion ratio, making the thin grid line of positive electrode printed pattern not have anastomose stops, adopt the silk screen plate of this method manufacturing behind the printed silver slurry, can not produce broken string, lines are thinner, and printing has evenly promoted battery sheet conversion efficiency.
In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is:
The positive electrode silk screen plate manufacture method that a kind of solar silicon cell conversion ratio is high comprises the steps:
(1) the solar silicon cell positive electrode printed pattern that the client is provided and standard silk screen plate figure are input to the contrast that superposes in the corresponding computer software;
(2) according to the analysis of computer software, the spacing of the adjacent warp at the thin grid line of the corresponding solar silicon cell positive electrode printed pattern place of adjusting silk screen plate makes its 2-3 that increases to primary leading doubly;
(3) the line footpath of the warp of the positive electrode silk screen plate outside the adjustment solar silicon cell positive electrode printed pattern, parallel is to original 1.5-2 times;
(4) the positive electrode silk screen plate figure after output is adjusted from computer software adopts the mode of electroforming or little cutting to finish the manufacturing of silk screen plate according to the figure of exporting.
The positive electrode silk screen plate manufacture method that aforesaid a kind of solar silicon cell conversion ratio is high is characterized in that: standard silk screen plate figure is with zero mode that tilts and solar silicon cell positive electrode printed pattern stack contrast in the step (1).
The positive electrode silk screen plate manufacture method that aforesaid a kind of solar silicon cell conversion ratio is high is characterized in that: the warp of the positive electrode silk screen plate in the solar silicon cell positive electrode printed pattern, the line of parallel directly are 10-25 μ m.
The invention has the beneficial effects as follows:
1, standard silk screen plate figure is contrasted with zero mode that tilts and the stack of solar silicon cell positive electrode printed pattern, and the spacing of the adjacent warp at the thin grid line of the corresponding solar silicon cell positive electrode printed pattern place by increasing silk screen plate, guaranteed that thin grid line can not coincide with the warp of silk screen plate, and printing is evenly effectively improved the conversion efficiency of every solar silicon cell;
2, directly be contracted to 10-25 μ m by the line with the graticule of silk screen plate, thin grid line is reduced with the area that the silk screen plate parallel overlaps, can not produce broken string when having guaranteed printing, the conversion efficiency of every solar silicon cell is improved;
3, directly increase to original 1.5-2 doubly by the warp of the positive electrode silk screen plate that solar silicon cell positive electrode printed pattern is outer, the line of parallel, solve the problem that causes silk screen plate intensity to reduce through distance between centers of tracks because strengthening, and reduced the possibility that thin grid line 21 overlaps with warp 11.
Description of drawings
Fig. 1 is the enlarged diagram of existing solar energy positive electrode silk screen plate;
Fig. 2 is the enlarged diagram of solar energy positive electrode silk screen plate of the present invention.
Among the figure: silk screen plate 1, silk screen plate warp 11, silk screen plate parallel 12, the thin grid line 21 of positive electrode image.
The specific embodiment
Below in conjunction with Figure of description, the present invention is further illustrated.
The positive electrode silk screen plate manufacture method that a kind of solar silicon cell conversion ratio is high comprises the steps:
(1) the solar silicon cell positive electrode printed pattern that the client is provided and standard silk screen plate figure are input in the corresponding computer software, as the contrast that superposes of drawing softwares such as AutoCAD;
(2) according to the analysis of computer software, the spacing of the adjacent warp at the thin grid line of the corresponding solar silicon cell positive electrode printed pattern place of adjusting silk screen plate makes its 2-3 that increases to primary leading doubly;
(3) the line footpath of the warp of the positive electrode silk screen plate outside the adjustment solar silicon cell positive electrode printed pattern, parallel is to original 1.5-2 times;
(4) the positive electrode silk screen plate figure after output is adjusted from computer software adopts the mode of electroforming or little cutting to finish the manufacturing of silk screen plate according to the figure of exporting.
Standard silk screen plate figure in the high positive electrode silk screen plate manufacture method of aforementioned solar silicon cell conversion ratio in the step (1) contrasts with zero mode that tilts and the stack of solar silicon cell positive electrode printed pattern.
The live width of thin grid line is about 35 to 50 μ m in the solar silicon cell positive electrode printed pattern, spacing between the adjacent thin grid line is 2.0-2.5mm, warp in the common positive electrode silk screen plate, the line of parallel directly is about 16 μ m, spacing between the adjacent warp is about 50 μ m, thereby nearly 40 warps between adjacent two thin grid lines, when standard silk screen plate figure superposes with zero mode that tilts and solar silicon cell positive electrode printed pattern, thin grid line coincides with warp probably, but publish picture by software according to the design needs earlier by above-mentioned steps, utilize the enlarged diagram of the positive electrode silk screen plate that method processing and manufacturings such as electroforming process or little cutting become then as shown in Figure 2, the spacing of the adjacent warp 11 at the thin grid line of corresponding solar silicon cell positive electrode printed pattern 21 places by increasing silk screen plate 1, guaranteed that thin grid line 21 can not coincide with the warp 11 of silk screen plate 1, and printing evenly.
And directly increase to original 1.5-2 doubly by the warp 11 of the positive electrode silk screen plate that solar silicon cell positive electrode printed pattern is outer and the line of parallel 12, solve the problem that causes silk screen plate intensity to reduce through distance between centers of tracks because strengthening, guaranteed the intensity of silk screen plate.
The warp 11 of the positive electrode silk screen plate in the aforementioned solar silicon cell positive electrode printed pattern and the line of parallel 12 directly are 10-25 μ m, by dwindling the line footpath through, parallel, thin grid line is reduced with the area that the silk screen plate parallel overlaps, can not produce the situation of broken string when having guaranteed printing, and reduce the possibility that thin grid line 21 overlaps with warp 11.
Under the constant situation of other production technologies of battery sheet manufacturer, produce the positive electrode silk screen plate by method provided by the invention, by make after the printing the silver slurry evenly and do not break, the conversion efficiency of every solar silicon cell is effectively improved.
In sum, the positive electrode silk screen plate manufacture method that a kind of solar silicon cell conversion ratio provided by the invention is high, making the thin grid line of positive electrode printed pattern not have anastomose stops, adopt the silk screen plate of this method manufacturing behind the printed silver slurry, can not produce broken string, and printing has evenly promoted battery sheet conversion efficiency.
More than show and described basic principle of the present invention, principal character and advantage.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that describes in above-described embodiment and the specification just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is by appending claims and equivalent circle thereof.

Claims (2)

1. the positive electrode silk screen plate manufacture method that the solar silicon cell conversion ratio is high is characterized in that: comprise the steps:
(1) the solar silicon cell positive electrode printed pattern that the client is provided and standard silk screen plate figure are input to the contrast that superposes in the corresponding computer software;
(2) according to the analysis of computer software, the spacing of the adjacent warp at the thin grid line of the corresponding solar silicon cell positive electrode printed pattern place of adjusting silk screen plate makes its 2-3 that increases to primary leading doubly;
(3) the line footpath of the warp of the positive electrode silk screen plate outside the adjustment solar silicon cell positive electrode printed pattern, parallel is to original 1.5-2 times;
(4) the positive electrode silk screen plate figure after output is adjusted from computer software adopts the mode of electroforming or little cutting to finish the manufacturing of silk screen plate according to the figure of exporting;
Wherein, standard silk screen plate figure contrasts with zero mode that tilts and the stack of solar silicon cell positive electrode printed pattern in the step (1).
2. the high positive electrode silk screen plate manufacture method of a kind of solar silicon cell conversion ratio according to claim 1 is characterized in that: the warp of the positive electrode silk screen plate in the solar silicon cell positive electrode printed pattern, the line of parallel directly are 10-25 μ m.
CN 201210047834 2012-02-29 2012-02-29 Method for manufacturing anode screen plate for improving solar cell silicon sheet conversion rate Active CN102582220B (en)

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TWI495139B (en) * 2013-09-14 2015-08-01 Inventec Solar Energy Corp Screen for solar cell and method of using the same
CN106476417B (en) * 2015-08-25 2019-08-23 贾云涛 A method of production is used for the silk screen of silk-screen printing
CN105109188B (en) * 2015-09-07 2017-09-29 贾云涛 Silk-screen printing web plate, photolithography method and its application
CN106183363A (en) * 2016-08-10 2016-12-07 昆山良品丝印器材有限公司 400 mesh reel off raw silk from cocoons and knot an edition mask-making technology without net
CN106274024A (en) * 2016-08-10 2017-01-04 昆山良品丝印器材有限公司 325 mesh reel off raw silk from cocoons and knot an edition mask-making technology without net
CN106183362A (en) * 2016-08-10 2016-12-07 昆山良品丝印器材有限公司 280 mesh reel off raw silk from cocoons and knot an edition mask-making technology without net
CN106274025A (en) * 2016-08-10 2017-01-04 昆山良品丝印器材有限公司 500 mesh reel off raw silk from cocoons and knot an edition mask-making technology without net
CN106274026A (en) * 2016-08-10 2017-01-04 昆山良品丝印器材有限公司 360 mesh reel off raw silk from cocoons and knot an edition mask-making technology without net
CN106274039B (en) * 2016-08-16 2019-04-05 昆山良品丝印器材有限公司 Crystalline silicon printing halftone and its mask-making technology
CN108608724A (en) * 2016-12-09 2018-10-02 常州三立精图光电有限公司 It is a kind of without net knot version design method
CN108274886A (en) * 2017-01-05 2018-07-13 常州三立精图光电有限公司 Without net netting version wire casing structure and its graphic printing technique and cell piece obtained
CN106926598B (en) * 2017-02-07 2019-06-04 英利能源(中国)有限公司 The method for printing screen of solar battery sheet gate line electrode
CN108312697B (en) * 2018-02-02 2020-05-12 徐州鑫宇光伏科技有限公司 Screen without net knot

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JP3148376B2 (en) * 1992-06-29 2001-03-19 株式会社トーキン Printing screen manufacturing method
JP5351404B2 (en) * 2007-10-05 2013-11-27 中沼アートスクリーン株式会社 Method for producing mesh fabric
CN101483199A (en) * 2009-02-23 2009-07-15 珈伟太阳能(武汉)有限公司 Electrode construction for enhancing photoelectric transforming efficiency of silicon solar cell
CN201859886U (en) * 2010-05-13 2011-06-08 无锡尚德太阳能电力有限公司 Solar battery, screen and solar battery component thereof
CN101976708A (en) * 2010-09-22 2011-02-16 中国科学院宁波材料技术与工程研究所 Method for improving photoelectric conversion efficiency of crystal silicon solar battery
CN102157573A (en) * 2011-02-22 2011-08-17 江门尚日新能源有限公司 Printed pattern of positive electrode of solar cell
CN102299203B (en) * 2011-08-25 2013-04-24 浙江正泰太阳能科技有限公司 Solar energy cell and solar energy cell right side electrode design method

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